CN108963094A - A kind of organic electroluminescence device - Google Patents
A kind of organic electroluminescence device Download PDFInfo
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- CN108963094A CN108963094A CN201810763668.XA CN201810763668A CN108963094A CN 108963094 A CN108963094 A CN 108963094A CN 201810763668 A CN201810763668 A CN 201810763668A CN 108963094 A CN108963094 A CN 108963094A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
Abstract
This application discloses a kind of organic electroluminescence devices, including substrate, first electrode, organic layer, second electrode and the encapsulating structure set gradually；Organic layer includes luminescent layer, hole transport functional layer and electron-transport functional layer positioned at luminescent layer two sides；It is provided with UV sacrificial layer between the corresponding electrode of the light-emitting surface of luminescent device and luminescent layer, contains light absorbent in UV sacrificial layer；It is provided between UV sacrificial layer and luminescent layer for avoiding electroluminescent first additional functional layer.For the application by the way that UV sacrificial layer is arranged inside luminescent device, the ability for inherently making OLED device have confrontation high-energy light also can increase application space to significantly promote the reliability and service life of OLED Related product.
Description
Technical field
The present disclosure relates generally to lighting areas, and in particular to OLED lighting area.
Background technique
OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) refer to organic semiconducting materials and
Luminescent material is under electric field driven, the phenomenon that injection by carrier with composite guide photoluminescence.Its principle is to use transparent/translucent
Metal/metal oxide electrode and metal/metal oxide electrode drive respectively as the anode and cathode of device in external electrical field
Under dynamic, carrier (electrons and holes) is injected into electrons and holes transfer function layer, electrons and holes point from cathode and anode respectively
Not Jing Guo electrons and holes transfer function layer be transmitted to luminescent layer, and exciton (exciton) is formed in luminescent material, in exciton
It disappears after limited electron-hole is compound, energy radiates (emission wavelength is limited to luminescent material characteristic) in the form of visible light.
Radiant light can be observed from transparent/translucent electrode side.This principle of luminosity is widely applied in illumination and display screen.
But most organic materials are sensitive to high-energy light, and the high-energy light source being primarily present in general environment is the energy that shines
Amount mainly falls in 2.8-4.1 electron-volts of energy；Some materials are possible to the high-energy light because in environment in OLED device
Source causes to decay in turn, the rule of decaying are as follows: the illumination of high-energy light source and the product of irradiation time magnitude are close to a fixed value.
The some proportion that the upper decaying of OLED illumination application reaches the brightness of source beginning can be defined as the service life of OLED illumination, if OLED device is answered
It can largely be irradiated by high-energy light with (such as automobile-used or aviation lighting), then high-energy light source therein can accelerate to shield the old of body
Change, shortens its service life.
The design of all blocking high-energy light sources done outside screen body is to enter OLED device in reduction high-energy light source
Device is caused to deteriorate in part, such as OLED screen body can be increased using external lamp housing, anti-ultraviolet material, reflecting layer etc. and used
Service life.
The design of above-mentioned blocking high-energy light source affects the beauty of OLED device to a certain extent, increases OLED device
The cost of part.
Summary of the invention
In view of drawbacks described above in the prior art or deficiency, OLED device sheet can inherently be improved by being intended to provide one kind
The anti-high-energy light source irradiation ability of body and the organic electroluminescence device for not influencing design.
First aspect the application provides a kind of organic electroluminescence device, substrate, the first electricity including being sequentially overlapped setting
Pole, organic layer, second electrode and encapsulating structure；The light-emitting surface of the organic electroluminescence device is located at first electrode or the second electricity
Pole side；The organic layer includes luminescent layer, hole transport functional layer and electron-transport functional layer positioned at luminescent layer two sides；Hair
UV sacrificial layer, the UV sacrificial layer are provided between first electrode or second electrode and luminescent layer where the light-emitting surface of optical device
It is provided between the luminescent layer for avoiding electroluminescent first additional functional layer.
According to technical solution provided by the embodiments of the present application, the UV sacrificial layer is by hole transport functional layer or electron-transport
Functional layer adulterates light absorbent as doped body.
According to technical solution provided by the embodiments of the present application, the light absorbent is fluorescent material, phosphor material or quantum
Point in any one.
According to technical solution provided by the embodiments of the present application, the hole transport functional layer is by hole injection layer HI, hole
At least one of transport layer HT or electronic barrier layer EBL layering composition；The electron-transport functional layer by electron injecting layer EI,
At least one of electron transfer layer ET and hole blocking layer HBL layering composition.
According to technical solution provided by the embodiments of the present application, first additional functional layer uses the main body material of UV sacrificial layer
Material is made, and thickness is more than or equal to 10nm.
According to technical solution provided by the embodiments of the present application, the UV sacrificial layer can absorb luminous energy and is greater than luminescent layer
Luminous energy and the light for being less than 3.0eV.
According to technical solution provided by the embodiments of the present application, the thickness of the UV sacrificial layer is more than or equal to 20nm.
According to technical solution provided by the embodiments of the present application, weight accounting of the light absorbent in the UV sacrificial layer
Range is 1%-5%.
According to technical solution provided by the embodiments of the present application, it is mixed into the UV sacrificial layer for promoting charge transport ability
The second additional function material.
According to technical solution provided by the embodiments of the present application, the second additional function material is metal, metal oxide, carbon
Any one in material, electron affinity or the very competent organic semiconducting materials that dissociate.
The application inherently makes OLED device by the way that UV sacrificial layer is arranged in the inside of luminescent device (OLED device)
Itself has the ability of confrontation high-energy light, so that the reliability and service life of OLED Related product are significantly promoted,
It can increase application space.UV sacrificial layer is arranged in hole transport functional layer or electron-transport functional layer, especially when UV sacrifices
Layer is that this technical solution of light absorbent is adulterated in hole transport functional layer or electron-transport functional layer, so that the technology of the application
Scheme can improve the absorption high-energy light of OLED device under the premise of not influencing original OLED device structure and production technology
Ability；
Light absorbent in the application UV sacrificial layer is mainly selected from luminescent dye, the general convenience of selection, to former OLED device
The influence of efficiency 15% hereinafter, but absorption of this layer to high-energy light, can slow down long-time high energy light irradiation after
The rate of climb of OLED screen bulk voltage, so that the lofty perch that the voltage of OLED screen body rises after high-energy light irradiation is lower, because
OLED screen attenuating is characterized as brightness decline in photoelectric properties decline and voltage rises, therefore slows down the rate of climb of voltage
The highest point risen with voltage is equal to that screen body service life can be increased, experiments have shown that the technical solution of the application to shield body
Service life improve at least 30%.
The application be arranged between UV sacrificial layer and luminescent layer the first additional functional layer can effectively avoid it is electroluminescent go out
Existing, especially when additional functional layer is prepared using UV sacrificial layer material of main part, better effect, technique is simpler.
The application adds the second additional function material in UV sacrificial layer, can effectively improve the charge transmission energy of UV sacrificial layer
Power, so that device voltage reduction, carrier transport factor are got higher, the service life is elongated, while the electroluminescent that can reduce UV sacrificial layer is existing
As.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, the application's is other
Feature, objects and advantages will become more apparent upon:
Fig. 1 is the structural schematic diagram of the first embodiment of the application organic electroluminescence device；
Fig. 2 is the structural schematic diagram of second of embodiment of the application organic electroluminescence device；
Fig. 3 is the structural schematic diagram of the third embodiment of the application organic electroluminescence device；
Fig. 4 is the structural schematic diagram of the 4th kind of embodiment of the application organic electroluminescence device；
Fig. 5 is the structural schematic diagram of the 5th kind of embodiment of the application organic electroluminescence device；
Fig. 6 is the transient current and voltage tendency chart of control group and experimental group 1 and experimental group 2 in the application；
Fig. 7 is the comparison diagram of the device lifetime of control group and experimental group 1 and experimental group 2 in the application；
Figure label: 10, substrate；20, first electrode；30, hole transport functional layer；60, second electrode；40, luminescent layer；
50, electron-transport functional layer；32, hole transmission layer HT；31, hole injection layer HI；33, UV sacrificial layer；52, electron injecting layer
EI；51, electron transfer layer ET；70, the first additional functional layer；80 second additional function materials.
Specific embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining related invention, rather than the restriction to the invention.It also should be noted that in order to
Convenient for description, part relevant to invention is illustrated only in attached drawing.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
Please referring to Fig. 1 is a kind of a kind of structural schematic diagram of embodiment of organic electroluminescence device of the application, including successively
Substrate 10, first electrode 20, organic layer, second electrode 60 and the encapsulating structure (being not drawn into figure) being superposed；It is described organic
Layer includes luminescent layer 40, hole transport functional layer 30 and electron-transport functional layer 50 positioned at 40 two sides of luminescent layer；It is described organic
UV sacrificial layer, institute are set between the first electrode 20 or second electrode 60 and luminescent layer 40 where the light-emitting surface of electroluminescent device
It states and is provided between UV sacrificial layer and the luminescent layer 40 for avoiding electroluminescent first additional functional layer 70.Above-mentioned hole
Transfer function layer 30 is made of the material for being able to achieve hole transport, such as can be p-type hole transmission layer, and above-mentioned electronics passes
Transmission function layer 50 is made of the material for being able to achieve electron-transport, such as can be N-type electron transfer layer.
Above-mentioned organic electroluminescence device is OLED luminescent device；OLED luminescent device has bottom emission, such as Fig. 1 and
Shown in Fig. 2, namely from 20 side of first electrode shine, also have from top surface shine, as shown in Figure 3 and Figure 4, i.e., from second electrode side
60 shine；Arrow direction is light emission direction in figure, and the organic layer between first electrode 20 and second electrode 60 can be PIN
Structure, as shown in figures 1 and 3；It is also possible to NIP structure, as shown in Figure 2 and Figure 4；Namely OLED luminescent device can be Fig. 1
To four kinds of structures between Fig. 4, regardless of structure, UV sacrificial layer (setting is drawn in figure in bevelled structure sheaf) setting
Between light-emitting surface and luminescent layer 40.
Hole transport functional layer can be by least one in hole injection layer HI, hole transmission layer HT, electronic barrier layer EBL
A layering composition, electron-transport functional layer can by electron injecting layer EI, electron transfer layer ET and hole blocking layer HBL extremely
Few layering composition；
In embodiment as shown in Figure 5, hole transport functional layer 30 is by hole injection layer HI 31, hole transmission layer HT32
It is formed with hole blocking layer HBL, UV sacrificial layer 33 is made of the hole blocking layer HBL doped with light absorbent；UV sacrificial layer 33
It is arranged between luminescent layer 40 and hole transmission layer HT 32；Electron-transport functional layer 50 is by electron injecting layer 52 and electron-transport
Layer 51 forms；
Preferably, the UV sacrificial layer is adulterated as doped body by hole transport functional layer or electron-transport functional layer and is inhaled
Luminescent material；In other embodiments, light-absorbing material layer is also inserted into luminescent layer and hole transport functional layer adjacent thereto
Or between the layering of electron-transport functional layer.
Therefore the UV sacrificial layer of the application is defined as: layering doped with the hole transport functional layer of light absorbent is mixed
The layering of the miscellaneous electron-transport functional layer for having light absorbent or the layering of the hole transport functional layer adjacent with light-absorbing material layer with
The superimposed layer of light-absorbing material layer or the layering of electron-transport functional layer adjacent with light-absorbing material layer and being superimposed for light-absorbing material layer
Layer.
UV sacrificial layer is possible to shine under electric drive, in order to avoid such case appearance, in UV sacrificial layer and shines
Layer between be placed with separated with UV sacrificial layer homogeneity material of main part namely the first additional functional layer 70 using UV sacrificial layer master
Body material is made；In so certifiable UV sacrificial layer only single kind carrier (electronics or hole), so that it may reach and avoid electricity
Photoluminescence.
Above-mentioned first additional functional layer 70 is made of the material of main part or function similar material of the UV sacrificial layer, main body
The identical concept of material are as follows:
When being entrained in the hole transmission layer HT of hole transport functional layer such as light absorbent or light-absorbing material layer and hole
When transport layer HT is adjacent, then the material of the first additional functional layer 70 is the material for being able to achieve hole transport function, such as can
To be different types of HT, such as HT1, HT2 or HT3 ...；
In when being entrained in the hole injection layer HI 31 of hole transport functional layer such as light absorbent or light-absorbing material layer and empty
When cave implanted layer HI 31 is adjacent, then the material of the first additional functional layer 70 is the material for being able to achieve hole function of injecting；
When being entrained in the electronic barrier layer EBL of hole transport functional layer such as light absorbent or light-absorbing material layer and electronics
When barrier layer EBL is adjacent, then the material of the first additional functional layer 70 is the material for being able to achieve electronic blocking function；
When being entrained in the electron injecting layer EI of electron-transport functional layer such as light absorbent or light-absorbing material layer and electronics
When implanted layer EI is adjacent, then the material of the first additional functional layer 70 is the material for being able to achieve electronics injecting function；
When being entrained in the electron transfer layer ET of electron-transport functional layer such as light absorbent or light-absorbing material layer and electronics
When transport layer ET is adjacent, then the material of the first additional functional layer 70 is the material for being able to achieve electron-transport function；
When being entrained in the hole blocking layer HBL of electron-transport functional layer such as light absorbent or light-absorbing material layer and hole
When barrier layer HBL is adjacent, then the material of the first additional functional layer 70 is the material for being able to achieve hole barrier function；
So when UV sacrificial layer is arranged when hole transport functional layer, can with and be not limited to be described in table 1 below
Situation:
| Serial number | The distribution situation of organic layer (brace will separate between layers) |
| 1 | HT1: light absorbent/HT1/ luminescent layer/ET |
| 2 | HT1: light absorbent/HT2/ luminescent layer/ET |
| 3 | EBL: light absorbent/EBL/ luminescent layer/ET |
| 4 | HI/HT: light absorbent/HT/ luminescent layer/ET |
| 5 | HT/EBL: light absorbent/EBL/ luminescent layer/ET |
| 6 | HI/HT/EBL: light absorbent/EBL/ luminescent layer/ET |
Table 1
As shown in table 1, the light absorbent can blend in the layering of place；As shown in table 2 below, the light absorbent can
One layer is independently formed with the surface being layered at place.
Table 2
Composition comparison as shown in table 3 below for each layer of organic layer in several embodiments of the application:
| Experimental group | The composition of each layer of organic layer |
| Control group | HI/HT (40nm)/luminescent layer/ET |
| Experimental group 1 | HI/HT:Yellow dopant (20nm)/HT (20nm)/luminescent layer/ET |
| Experimental group 2 | HI/HT (17nm)/Yellow dopant (3nm)/HT (20nm)/luminescent layer/ET |
Table 3
Above-mentioned control group is a kind of layer group structure of organic layer in the prior art, and experimental group 1 is the HT in control group
Layer blending has yellow fluorescent material；Experimental group 2 is that one layer of yellow fluorescent material is arranged in the HT layer surface in control group.Such as Fig. 6
With shown in Fig. 7 and table 4, be arranged UV sacrificial layer after, the every electrical parameter and control group for shielding body be relatively, but shield body
Service life be obviously improved.
Table 4
Light absorbent is that absorbable luminous energy is greater than the luminous energy of luminescent layer and is less than 3.0eV in above-described embodiment
The material of light；For example, device luminescent spectrum falls in the green device of 550nm, light absorbent can select luminescence feature to be situated between
In the material of 413nm-550nm；
Above-mentioned light absorbent can be any one in fluorescent material, phosphor material or quantum dot.Preferably, described
The thickness of one additional functional layer is more than or equal to 10nm.
The thickness of above-mentioned UV sacrificial layer is more than or equal to 20nm, and the thickness of the UV sacrificial layer can be in other embodiments
Other numerical value more than or equal to 20nm.
Preferably, weight accounting of the light absorbent described in above-described embodiment in the UV sacrificial layer is 20%, at it
In his embodiment, which is also possible to other numerical value in range 1%-5%.
As shown in figure 5, being mixed into the second additional function for promoting charge transport ability in the preferably described UV sacrificial layer
In energy material 80, such as metal, metal oxide, carbon materials or electron affinity or the very competent organic semiconducting materials that dissociate
Any one.Metal for example can be lithium, aluminium, silver, gold, caesium etc., metal oxide for example can be molybdenum oxide, tungsten oxide,
Aluminium oxide etc.；Carbon materials for example can be carbon nanotube, fullerene, graphene；Electron affinity or free energy extremely strong organic half
Conductor material for example can be F4-TCNQ, Liq (8-hydroxy-quinolinato lithium) etc. or dopant material.F4-
The chemical formula of TCNQ is four cyanogen dimethyl-parabenzoquinones；Liq is 8 oxyquinoline lithiums.
For example, increase an experimental group 3 on the basis of above-mentioned table 3, the composition of each layer of organic layer in experimental group 3 are as follows:
HI/HT:Yellow dopant:F4-TCNQ (20nm)/HT (20nm)/luminescent layer/ET；
Above-mentioned experimental group 3 has blended F4-TCNQ on the basis of experimental group 2, and following table 5 is experimental group 1 and experimental group 3
Shield the comparison of body electrical parameter,
Table 5
It can be seen that from above-mentioned experimental result after blending the second additional function material F4-TCNQ, the voltage drop of same brightness
It is much lower.
Fig. 7 is the mapping of control group and 2 device lifetime of experimental group 1 and experimental group, this figure is long under the conditions of certain luminance
Time lights, and measures the case where specific brightness subtracts in different times, and ordinate is brightness value in Fig. 7, from figure 7 it can be seen that
The identical time, the brightness in experimental group 1 and experimental group 2 is all brighter than control group, and this illustrates experimental groups 1 and experimental group 2
Brightness decay be slower than control group, that is to say, that the service life of experimental group 1 and experimental group 2 than control group leader.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.Those skilled in the art
Member is it should be appreciated that invention scope involved in the application, however it is not limited to technology made of the specific combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where not departing from the inventive concept, it is carried out by above-mentioned technical characteristic or its equivalent feature
Any combination and the other technical solutions formed.Such as features described above has similar function with (but being not limited to) disclosed herein
Can technical characteristic replaced mutually and the technical solution that is formed.
Claims (10)
1. a kind of organic electroluminescence device, including be sequentially overlapped the substrate of setting, first electrode, organic layer, second electrode and
Encapsulating structure；The light-emitting surface of the organic electroluminescence device is located at first electrode or second electrode side；The organic layer packet
Include luminescent layer, hole transport functional layer and electron-transport functional layer positioned at luminescent layer two sides；It is characterized in that, luminescent device
UV sacrificial layer, the UV sacrificial layer and the hair are provided between first electrode or second electrode and luminescent layer where light-emitting surface
It is provided between photosphere for avoiding electroluminescent first additional functional layer.
2. organic electroluminescence device according to claim 1, which is characterized in that the UV sacrificial layer is by hole transport function
Ergosphere or electron-transport functional layer are as doped body doping light absorbent.
3. organic electroluminescence device according to claim 2, which is characterized in that the light absorbent be fluorescent material,
Any one in phosphor material or quantum dot.
4. organic electroluminescence device according to claim 1-3, which is characterized in that the hole transport function
Layer is made of at least one of hole injection layer HI, hole transmission layer HT or electronic barrier layer EBL layering；The electron-transport
Functional layer is made of at least one of electron injecting layer EI, electron transfer layer ET and hole blocking layer HBL layering.
5. organic electroluminescence device according to claim 1-3, it is characterised in that；First additional function
Layer is made of the material of main part of UV sacrificial layer, and thickness is more than or equal to 10nm.
6. organic electroluminescence device according to claim 1-3, which is characterized in that the UV sacrificial layer can be inhaled
Light energy is received and dispatched to be greater than the luminous energy of luminescent layer and be less than the light of 3.0eV.
7. organic electroluminescence device according to claim 1-3, which is characterized in that the thickness of the UV sacrificial layer
Degree is more than or equal to 20nm.
8. according to the described in any item organic electroluminescence devices of claim 2-3, which is characterized in that the light absorbent is in institute
Stating the weight accounting range in UV sacrificial layer is 1%-5%.
9. organic electroluminescence device according to claim 1-3, which is characterized in that mixed in the UV sacrificial layer
Enter the second additional function material for promoting charge transport ability.
10. organic electroluminescence device according to claim 9, which is characterized in that the second additional function material is gold
Any one in category, metal oxide, carbon materials, electron affinity or the very competent organic semiconducting materials that dissociate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810763668.XA CN108963094B (en) | 2018-07-12 | 2018-07-12 | Organic electroluminescent device |
| EP19834725.4A EP3751630A4 (en) | 2018-07-12 | 2019-07-10 | Organic electroluminescent device |
| PCT/CN2019/095436 WO2020011202A1 (en) | 2018-07-12 | 2019-07-10 | Organic electroluminescent device |
| US16/976,533 US11444267B2 (en) | 2018-07-12 | 2019-07-10 | Organic light emitting device |
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| CN201810763668.XA CN108963094B (en) | 2018-07-12 | 2018-07-12 | Organic electroluminescent device |
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|---|---|
| CN108963094B (en) | 2020-06-09 |
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