CN108919601A - Mask parameter optimization method and device - Google Patents
Mask parameter optimization method and device Download PDFInfo
- Publication number
- CN108919601A CN108919601A CN201810967757.6A CN201810967757A CN108919601A CN 108919601 A CN108919601 A CN 108919601A CN 201810967757 A CN201810967757 A CN 201810967757A CN 108919601 A CN108919601 A CN 108919601A
- Authority
- CN
- China
- Prior art keywords
- mask
- feasible
- dimensional parameter
- initial
- parameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 129
- 238000005457 optimization Methods 0.000 title claims description 77
- 230000008569 process Effects 0.000 claims abstract description 97
- 238000001259 photo etching Methods 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims description 8
- 241000208340 Araliaceae Species 0.000 claims description 7
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims description 7
- 235000003140 Panax quinquefolius Nutrition 0.000 claims description 7
- 235000008434 ginseng Nutrition 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 6
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical group [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The embodiment of the application discloses a method and a device for optimizing mask parameters, wherein a test pattern, an initial light source parameter and an initial mask three-dimensional parameter are obtained, the initial mask three-dimensional parameter comprises an initial mask thickness and an initial mask side wall angle, a plurality of groups of feasible mask three-dimensional parameters can be obtained according to the initial mask three-dimensional parameter, the feasible mask three-dimensional parameters comprise a feasible mask thickness and a feasible mask side wall angle, a feasible photoetching process window corresponding to each group of feasible mask three-dimensional parameters is obtained based on the test pattern and the initial light source parameter, the feasible photoetching process window is used as a measurement reference, and the feasible mask three-dimensional parameter corresponding to the maximum value of the feasible photoetching process window can be regarded as the optimal mask three-dimensional parameter optimized at this time. In the embodiment of the application, the initial mask three-dimensional parameters and the initial light source parameters are optimized, so that higher photoetching resolution can be obtained, and a larger photoetching process window and better exposure resolution can be obtained.
Description
Technical field
This application involves semiconductor field more particularly to a kind of optimization method and devices of mask parameters.
Background technique
In semiconductor field, photoetching be integrated circuit production in an important process, specifically, can by exposure,
Mask graph on mask is imaged onto according to a certain percentage on the object to be processed.With the development of integrated circuit, partly lead
The size of body device is gradually reduced, and people are for increasing photoetching resolution and lithographic process window (process window, PW)
Demand it is more more and more intense, wherein lithographic process window, which refers to, guarantees that mask graph can correctly copy to exposure agent on silicon wafer
Amount and defocusing amount range, may include three information：Imaging accuracy, exposure and depth of focus.
In the prior art, it can effectively can increase lithographic process window by optimizing to mask and light source parameters,
Such as after 28nm technology node, source mask collaboration optimization (Source Mask Optimization, SMO) method is wide
General use, specifically, initial mask figure and primary light source parameter can first be obtained, on the basis of the thickness of fixed mask
On, initial mask graphic parameter and primary light source parameter are optimized by SMO method.Wherein, the thickness of mask is to pass through
Light source vertical incidence is assumed in SMO, is calculated according to the optical property of mask.
However, in actual process, in order to make all graphical display optimum resolutions on mask, so that common photoetching work
Skill window reaches maximum, and light source often according to the figure on mask, is optimized into complicated topographic profile.At this point for
For mask, light is oblique incidence through mask.Therefore, mask graph and light that existing SMO technical optimization obtains
Source parameter cannot make lithographic process window reach optimum value.
Summary of the invention
It cannot make lithographic process window to solve the mask graph parameter optimized in the prior art and light source parameters
The problem of reaching optimum value, the embodiment of the present application provide a kind of optimization method and device of mask parameters.
The embodiment of the present application provides a kind of optimization method of mask parameters, the method includes：
Obtaining resolution chart, initial mask three-dimensional parameter and primary light source parameter, the initial mask three-dimensional parameter includes
Initial mask thickness and initial mask side wall angle；
According to the initial mask three-dimensional parameter, the feasible mask three-dimensional parameter of multiple groups is obtained；The feasible mask three-dimensional ginseng
Number includes feasible mask thickness and feasible mask sidewalls angle；
Based on the resolution chart and the primary light source parameter, obtain every group described in feasible mask three-dimensional parameter it is corresponding
Feasible lithographic process window；
The corresponding feasible mask three-dimensional parameter of the maximum value of the feasible lithographic process window is determined as optimal mask three
Tie up parameter.
Optionally, it is described be based on the resolution chart and the primary light source parameter, obtain every group described in feasible mask three
The corresponding feasible lithographic process window of parameter is tieed up, including：
Based on feasible mask three-dimensional parameter described in every group, the resolution chart and the primary light source parameter are carried out respectively
Collaboration optimization obtains the corresponding optimization figure of the feasible mask three-dimensional parameter and optimization light source parameters；
According to the optimization figure and the optimization light source parameters, it is corresponding feasible to obtain the feasible mask three-dimensional parameter
Lithographic process window.
Optionally, the method also includes：
According to the initial mask three-dimensional parameter, the initial lithographic process window based on the resolution chart is obtained；
Judge whether the maximum value of the feasible lithographic process window is greater than or equal to the initial lithographic process window, if
It is no, then the step of returning to execution according to the initial mask three-dimensional parameter, obtain multiple groups feasible mask three-dimensional parameter.
Optionally, described that the feasible mask three-dimensional parameter of multiple groups is obtained according to the initial mask three-dimensional parameter, including：
The range of initial mask three-dimensional parameter, the feasible mask three-dimensional ginseng are determined according to the initial mask three-dimensional parameter
Several ranges includes the range of feasible mask thickness and/or the range at feasible mask sidewalls angle；
The feasible mask three-dimensional parameter of multiple groups is determined within the scope of the mask three-dimensional parameter.
Optionally, the acquisition initial mask three-dimensional parameter, including：
According to the optical property of mask, initial mask three-dimensional parameter is calculated.
The embodiment of the present application provides a kind of optimization device of mask parameters, and described device includes：
Initial acquisition unit, it is described initial for obtaining resolution chart, initial mask three-dimensional parameter and primary light source parameter
Mask three-dimensional parameter includes initial mask thickness and initial mask side wall angle；
Feasible mask three-dimensional parameter acquiring unit, for obtaining according to the initial mask three-dimensional parameter, multiple groups are feasible to be covered
Mould three-dimensional parameter；The feasible mask three-dimensional parameter includes feasible mask thickness and feasible mask sidewalls angle；
Feasible lithographic process window acquiring unit is obtained for being based on the resolution chart and the primary light source parameter
The corresponding feasible lithographic process window of feasible mask three-dimensional parameter described in every group；
Optimal mask three-dimensional parameter determination unit, for the maximum value of the feasible lithographic process window is corresponding feasible
Mask three-dimensional parameter is determined as optimal mask three-dimensional parameter.
Optionally, the feasible lithographic process window acquiring unit, including：
Optimal Parameters acquiring unit is used for based on feasible mask three-dimensional parameter described in every group, respectively to the resolution chart
Collaboration optimization is carried out with the primary light source parameter, obtains the corresponding optimization figure of the feasible mask three-dimensional parameter and optimization light
Source parameter；
Feasible lithographic process window obtains subelement, for obtaining according to the optimization figure and the optimization light source parameters
To the corresponding feasible lithographic process window of the feasible mask three-dimensional parameter.
Optionally, described device further includes：
Initial lithographic process window acquiring unit, for according to the initial mask three-dimensional parameter, obtaining based on the survey
Attempt the initial lithographic process window of shape；
Judging unit, for judging whether the maximum value of the feasible lithographic process window is greater than or equal to the initial light
Carving technology window, if it is not, then activating the feasible mask three-dimensional parameter acquiring unit.
Optionally, the feasible mask three-dimensional parameter acquiring unit, including：
Feasible region determination unit, for determining the model of initial mask three-dimensional parameter according to the initial mask three-dimensional parameter
It encloses, the range of the feasible mask three-dimensional parameter includes the range of feasible mask thickness and/or the range at feasible mask sidewalls angle；
Feasible mask three-dimensional parameter obtains subelement, covers for determining that multiple groups are feasible within the scope of the mask three-dimensional parameter
Mould three-dimensional parameter.
Optionally, the acquisition initial mask three-dimensional parameter, including：
According to the optical property of mask, initial mask three-dimensional parameter is calculated.
In a kind of optimization method and device of mask parameters provided by the embodiments of the present application, resolution chart, initial is first obtained
Mask three-dimensional parameter and primary light source parameter, wherein initial mask three-dimensional parameter includes initial mask thickness and initial mask side wall
Angle, according to initial mask three-dimensional parameter, the available feasible mask three-dimensional parameter of multiple groups, wherein feasible mask three-dimensional parameter includes
Feasible mask thickness and feasible mask sidewalls angle, feasible mask three-dimensional parameter are relevant to initial mask three-dimensional parameter.
It is based on resolution chart and primary light source parameter again, obtains the corresponding feasible photoetching work of every group of feasible mask three-dimensional parameter
The corresponding feasible mask three-dimensional parameter of the maximum value of feasible lithographic process window is determined as optimal mask three-dimensional and joined by skill window
Number, i.e., using corresponding lithographic process window as standard, choose the optimal mask three-dimensional parameter in feasible mask three-dimensional parameter.Also
It is to say, mask three-dimensional parameter is optimized in the embodiment of the present application, the corresponding feasible photoetching of the mask three-dimensional parameter after optimization
Process window is bigger, can obtain higher photoetching resolution.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in application, for those of ordinary skill in the art, without creative efforts,
It can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is a kind of flow chart of the optimization method of mask parameters provided by the embodiments of the present application；
Fig. 2 is a kind of schematic diagram of the intensity distribution of annular light source provided by the embodiments of the present application；
Fig. 3 is a kind of schematic diagram for being not optimised resolution chart provided by the embodiments of the present application；
Fig. 4 is a kind of corresponding depth of focus schematic diagram of feasible mask three-dimensional parameter provided by the embodiments of the present application；
Fig. 5 is the corresponding depth of focus schematic diagram of the feasible mask three-dimensional parameter of another kind provided by the embodiments of the present application；
Fig. 6 is a kind of intensity of light source distribution schematic diagram by optimization provided by the embodiments of the present application；
Fig. 7 is a kind of resolution chart schematic diagram by optimization provided by the embodiments of the present application；
Fig. 8 is a kind of structural block diagram of the optimization device of mask parameters provided by the embodiments of the present application.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, below in conjunction in the embodiment of the present application
Attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment is only this
Apply for a part of the embodiment, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art exist
Every other embodiment obtained under the premise of creative work is not made, shall fall in the protection scope of this application.
It in the prior art, can be by being optimized to initial mask figure and light source parameters, to effectively improve photoetching work
Skill window, such as after 28nm technology node, SMO method is widely adopted.Specifically, initial mask figure can be obtained first
With primary light source parameter, it is assumed that light source vertical incidence is calculated the thickness of mask by the optical property of mask, such as can be with
The thickness of mask is calculated according to the refractive index etc. of mask.On the basis of the thickness of fixed mask, pass through SMO method
Collaboration optimization is carried out to initial mask figure and primary light source parameter, the light source parameters of the mask graph and optimization that are optimized.
However, in actual operation, in order to make all figure reality optimum resolutions on mask, so that common photoetching work
Skill window reaches maximum, and light source often according to the figure on mask, is optimized to complicated topographic profile, at this point, light
It is not vertical incidence through mask, in fact, the light path of light beam in the mask is equal to mask in light source vertical incidence
Thickness, without vertical incidence light beam light path in the mask commonly greater than mask thickness, equally, the side wall angle of mask
It may not be right angle, also will affect the direction of light beam, therefore the three-dimensional structure of mask has biggish shadow to lithographic process window
It rings.And in the prior art, only initial mask figure and primary light source parameter are optimized, the thickness without considering mask
The optimization of degree and the optimization at mask sidewalls angle, obtained optimum results can not make lithographic process window reach optimum value.
In order to solve the above-mentioned technical problem, the embodiment of the present application provides a kind of optimization method and device of mask parameters,
Resolution chart, initial mask three-dimensional parameter and primary light source parameter are first obtained, wherein initial mask three-dimensional parameter includes initially covering
Mould thickness and initial mask side wall angle, according to initial mask three-dimensional parameter, the available feasible mask three-dimensional parameter of multiple groups, wherein
Feasible mask three-dimensional parameter includes feasible mask thickness and feasible mask sidewalls angle, and feasible mask three-dimensional parameter is and initial mask
Three-dimensional parameter is relevant.
It is based on resolution chart and primary light source parameter again, obtains the corresponding feasible photoetching work of every group of feasible mask three-dimensional parameter
The corresponding feasible mask three-dimensional parameter of the maximum value of feasible lithographic process window is determined as optimal mask three-dimensional and joined by skill window
Number, i.e., using corresponding lithographic process window as standard, choose the optimal mask three-dimensional parameter in feasible mask three-dimensional parameter.Also
It is to say, mask three-dimensional parameter is optimized in the embodiment of the present application, the corresponding feasible photoetching of the mask three-dimensional parameter after optimization
Process window is bigger, can obtain higher photoetching resolution.
Referring to Fig. 1, which is a kind of flow chart of the optimization method of mask three-dimensional parameter provided by the embodiments of the present application, packet
Include following steps.
S101 obtains resolution chart, primary light source parameter and initial mask three-dimensional parameter.
Primary light source is selected in light sources in light source bank, as the basic light source of optimization, such as can be annular (annular)
Light source, primary light source parameter are the intensities of illumination of each position of primary light source, the intensity distribution of primary light source are embodied, with reference to figure
2 show the intensity distribution schematic diagram (Illuminator Profile) of annular light source, wherein abscissa is x-axis direction (x
Position), ordinate is y-axis direction (y position), and different intensities of illumination is indicated by different colours.
Resolution chart refers to the figure on mask for optimization, can individually optimize, can also lead to resolution chart
It crosses and carries out cooperateing with optimization with light source parameters.Resolution chart is usually the figure in design layout, when it is implemented, can be design
Representative or relatively difficult for photoetching figure in domain.In the embodiment of the present application, resolution chart be can be
One, it is also possible to multiple, can be selected by lithographic engineer or designs resolution chart.Refering to what is shown in Fig. 3, being the application
The schematic diagram for a kind of resolution chart that embodiment provides, wherein the range in dotted line is resolution chart, the width of horizontal line
(being CD in figure) is 40 nanometers (nm), and the period (being PITCH in figure) of horizontal line is 90nm, and the width of vertical lines is (in figure
It is 60nm for Line).
Initial mask three-dimensional parameter may include initial mask thickness and initial mask side wall angle, wherein initial mask is thick
Degree and initial mask side wall angle can be determined according to the optical property of mask.
For example, initial mask thickness t can be according to the wavelength of the light for photoetching and the refractive index of mask dielectric layer
It is calculated, specifically, can be calculated by the following formula：
T=λ/[2 (n-1)], wherein λ is wavelength, and n is the refractive index of mask dielectric layer.
This is because when initial mask is with a thickness of t, vertical incidence to mask dielectric layer and by having initial mask thick
The light beam of the mask dielectric layer of degree, and, from the direction incidence vertical with mask dielectric layer and without the light beam of mask dielectric layer
Cancellation can be interfered, so as to offset the diffraction expansion effect of part, to improve resolution ratio and depth of focus.However, such as
Fruit light beam is not vertical incidence, then the light path of the light beam changes, and when initial mask is with a thickness of t, will not interfere phase
Disappear, therefore resolution ratio and depth of focus cannot be improved.Based on this, in the embodiment of the present application, initial mask thickness can be carried out excellent
Change, the direction for the light beam that optimized complex light issues is adapted it to, to improve resolution ratio and depth of focus.
The side wall angle of mask layer refers to the side wall of mask and the angle of horizontal plane, and ideally, the side wall angle of mask is
90 degree (°), in practical operation, a node mask sidewalls angle size is continued to use in the present embodiment as initial mask side wall angle, is
85 °, the optimization of initial mask side wall angle is carried out on this basis.
In the embodiment of the present application, phase shifting mask (the attenuated phase shift of strength retrogression can be used
Mask, PSM), illustratively, mask layer can be molybdenum silicide (MoSi) material, and wherein molybdenum silicide layer is partial light permeability, silication
The initial mask thickness of molybdenum can be 76 nanometers (nm), and initial sidewall angle can be 85 °.
S102 obtains the feasible mask three-dimensional parameter of multiple groups according to initial mask three-dimensional parameter.
Feasible mask three-dimensional parameter may include feasible mask thickness and feasible mask sidewalls angle.
According to initial mask three-dimensional parameter, the feasible mask three-dimensional parameter of multiple groups is obtained, specifically, can be according to initial mask
Three-dimensional parameter determines the range of initial mask three-dimensional parameter, and the feasible mask three-dimensional ginseng of multiple groups is determined within the scope of mask three-dimensional parameter
Number, wherein the range of feasible mask three-dimensional parameter includes the range of feasible mask thickness and/or the model at feasible mask sidewalls angle
It encloses.
As a kind of possible embodiment of the application, the model of feasible mask thickness can be determined according to initial mask thickness
It encloses, multiple feasible mask thickness is determined in the range of feasible mask thickness, using initial mask side wall angle as feasible mask side
Wall angle forms the different feasible mask three-dimensional parameter of the feasible mask thickness of multiple groups.
Feasible mask thickness may include initial mask thickness, can not also include initial mask thickness.
Shown in reference table 1, by the initial mask thickness of molybdenum silicide be for 76nm, initial sidewall angle are 85 °, according to initial
The range for the feasible mask thickness that mask thickness determines is 71 to 80nm, using 1nm as step-length, determines that multiple feasible mask thickness are
71nm, 72nm, 73nm, 74nm, 75nm, 76nm, 77nm, 78nm, 79nm, 80nm and 81nm are used as feasible mask sidewalls for 85 °
Angle forms the feasible mask three-dimensional parameter of the 1st to 11 group.
The different feasible mask three-dimensional parameter of the feasible mask thickness of table 1
| Feasible mask three-dimensional parameter group | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
| Feasible mask sidewalls angle (°) | 85 | 85 | 85 | 85 | 85 | 85 | 85 | 85 | 85 | 85 | 85 |
| Feasible mask thickness (nm) | 71 | 72 | 73 | 74 | 75 | 76 | 77 | 78 | 79 | 80 | 81 |
The embodiment alternatively possible as the application can also determine feasible mask side according to initial mask side wall angle
The range at wall angle determines multiple feasible mask sidewalls angles in the range of feasible mask sidewalls angle, using initial mask thickness as
Feasible mask thickness forms the different feasible mask three-dimensional parameter in the feasible mask sidewalls angle of multiple groups.
Correspondingly, feasible mask sidewalls angle may include initial mask side wall angle, it can not also include initial mask side wall
Angle.
Shown in reference table 2, by the initial mask of molybdenum silicide with a thickness of 76 nanometers, for initial sidewall angle is 85 °, according to first
Beginning mask sidewalls angle determines that the range at feasible mask sidewalls angle is 81 ° to 90 °, with 1 ° for step-length, determines multiple feasible mask sides
Wall angle is 81 °, 82 °, 83 °, 84 °, 85 °, 86 °, 87 °, 88 °, 89 ° and 90 °, using 76nm as feasible mask thickness, forms the
The feasible mask three-dimensional parameter of 12 to 21 groups.
The different feasible mask three-dimensional parameter in the feasible mask sidewalls angle of table 2
| Feasible mask three-dimensional parameter group | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 |
| Feasible mask thickness (nm) | 76 | 76 | 76 | 76 | 76 | 76 | 76 | 76 | 76 | 76 |
| Feasible mask sidewalls angle (°) | 81 | 82 | 83 | 84 | 85 | 86 | 87 | 88 | 89 | 90 |
Another possible embodiment as the application, can also determine feasible cover according to initial mask side wall angle respectively
The range of mould side wall angle determines multiple feasible mask sidewalls angles in the range of feasible mask sidewalls angle, according to initial mask thickness
Degree determines the range of feasible mask thickness, and multiple feasible mask thickness are determined in the range of feasible mask thickness, multiple feasible
Mask sidewalls angle and multiple feasible mask thickness form the feasible mask three-dimensional parameter of multiple groups, such as determine multiple feasible mask thickness
For 71nm, 72nm, 73nm, 74nm, 75nm, 76nm, 77nm, 78nm, 79nm, 80nm and 81nm, multiple feasible mask sides are determined
Wall angle is 81 °, 82 °, 83 °, 84 °, 85 °, 86 °, 87 °, 88 °, 89 ° and 90 °, according to multiple feasible mask thickness and multiple feasible
Mask sidewalls angle can form 110 groups of feasible mask three-dimensional parameters, not enumerate herein.
S103 is based on resolution chart and primary light source parameter, obtains the corresponding feasible light of every group of feasible mask three-dimensional parameter
Carving technology window.
Lithographic process window refers to guaranteeing that mask graph can correctly copy to exposure dose and defocusing amount on silicon wafer
Range may include three information：Imaging accuracy, exposure and depth of focus.
Corresponding to every group of feasible mask three-dimensional parameter, it can be based on resolution chart and primary light source parameter, obtained corresponding
Feasible lithographic process window.When it is implemented, every group of feasible mask three-dimensional parameter can be based on, respectively by SMO method to first
Beginning light source parameters and resolution chart optimize, and obtain the corresponding optimization figure of feasible mask three-dimensional parameter and optimization light source ginseng
Number obtains the corresponding feasible lithographic process window of feasible mask three-dimensional parameter according to optimization figure and optimization light source parameters.
When it is implemented, can be by professional lithography software tachyon come to primary light source parameter and resolution chart progress
Optimization, correspond to every group of feasible mask three-dimensional parameter, can establish corresponding 3D mask model, by for profession lithography software it is pre-
Corresponding preset condition is first set, i.e., exportable feasible photoetching work corresponding to each 3D mask model, meeting preset condition
Skill window.
Primary light source parameter and resolution chart are optimized by SMO method, obtain corresponding feasible photoetching process window
Mouthful, specifically, can first be carried out according to primary light source parameter, initial testing figure and other photoetching process conditions set
Iterative calculation obtains the optimization figure and optimization light source parameters corresponding to every group of feasible mask three-dimensional parameter, based on optimization light source
Parameter and optimization figure, determine the corresponding feasible lithographic process window of every group of feasible mask three-dimensional parameter.
Refering to what is shown in Fig. 4, being embodied for the corresponding depth of focus schematic diagram of the feasible mask three-dimensional parameter of the 1st to 11 group shown in table 1
Be mask sidewalls angle be 85 ° when, the relationship of depth of focus and feasible mask thickness (DOF-Thickness).Wherein, abscissa is
Feasible mask thickness (Thickness), unit nm, ordinate are depth of focus (Depth of Focus, DOF), unit nm.
Refering to what is shown in Fig. 5, for the corresponding depth of focus schematic diagram of the feasible mask three-dimensional parameter of the 12nd to 21 group shown in table 2, body
Existing be mask thickness be 76nm when, the relationship of depth of focus and mask sidewalls angle (DOF-Sidewall Angle), wherein abscissa
For mask sidewalls angle (Sidewall Angle), unit is degree (degree, °), and ordinate is depth of focus (DOF), unit nm.
The corresponding feasible mask three-dimensional parameter of the maximum value of feasible lithographic process window is determined as optimal mask three by S104
Tie up parameter.
Using the maximum value in the corresponding feasible lithographic process window of every group of feasible mask three-dimensional parameter as optimization photoetching work
Skill window, then maximum values in all optimization lithographic process windows, the corresponding feasible light of as all feasible mask three-dimensional parameters
Maximum value in carving technology window, as optimal lithographic process window.At this point, can be corresponding feasible by optimal lithographic process window
Mask three-dimensional parameter is determined as optimal mask three-dimensional parameter, realizes the optimization of mask three-dimensional parameter.
For example, 2nd group of feasible mask is three-dimensional in the corresponding depth of focus of the feasible mask three-dimensional parameter of the 1st to 11 group shown in Fig. 4
The corresponding depth of focus of parameter is maximum, and about 157nm can be used as optimal depth of focus, then the 2nd group of feasible mask three-dimensional parameter is this feasible ginseng
Optimal mask three-dimensional parameter in array conjunction.
Similarly, in the corresponding depth of focus of the shown in fig. 5 12nd to the 21st group of feasible mask three-dimensional parameter, the 15th group of feasible mask
The corresponding depth of focus of three-dimensional parameter is maximum, and about 158nm can be used as optimal depth of focus, then the 15th group of feasible mask three-dimensional parameter is this
Optimal mask three-dimensional parameter in feasible parameter combination.
Certainly, the feasible mask three-dimensional parameter of the 1st to 22 group in Fig. 4 and Fig. 5, due to the 15th group of feasible mask three-dimensional parameter
Corresponding depth of focus is greater than the corresponding depth of focus of the 2nd group of feasible mask three-dimensional parameter, then the 15th group of feasible mask three-dimensional parameter is corresponding
Depth of focus as optimal depth of focus, then the 15th group of feasible mask three-dimensional parameter is that the optimal mask in this feasible parameter combination is three-dimensional
Parameter.
It is understood that when feasible mask three-dimensional parameter includes initial mask three-dimensional parameter, obtained optimal photoetching
Process window is clearly to be more than or equal to the corresponding lithographic process window of initial mask three-dimensional parameter, at this point, photoetching process window
Mouth is improved.And when feasible mask three-dimensional parameter does not include initial mask three-dimensional parameter, obtained optimal photoetching process
Window is not necessarily greater to or is equal to the corresponding lithographic process window of initial mask three-dimensional parameter.
At this point, resolution chart and primary light source parameter can be based on, the corresponding initial lithographic of initial mask three-dimensional parameter is obtained
Process window.Specifically, the acquisition process of the corresponding initial lithographic process window of initial mask three-dimensional parameter, can refer to feasible
The corresponding acquisition process of the corresponding feasible lithographic process window of mask three-dimensional parameter, such as to resolution chart and primary light source parameter
It optimizes, details are not described herein.
After obtaining the corresponding initial lithographic process window of initial mask three-dimensional parameter, it can be determined that feasible photoetching process window
The maximum value of mouth, i.e., optimal lithographic process window, if be more than or equal to initial lithographic process window, if so, photoetching process
The value of window is improved, and can terminate the optimization process of mask three-dimensional parameter；If it is not, illustrating that lithographic process window does not obtain
It improves, at this point it is possible to return to execution according to initial mask three-dimensional parameter, the step of obtaining multiple groups feasible mask three-dimensional parameter, weight
Feasible mask three-dimensional parameter is newly obtained, and then re-starts the optimization of mask three-dimensional parameter, to improve the value of lithographic process window.
The intensity distribution schematic diagram of the light source by optimization is shown with reference to Fig. 6, i.e. optimization light source parameters schematic diagram,
In, abscissa is x-axis direction (x position), and ordinate is y-axis direction (y position), is indicated by different colours
Different intensities of illumination.Refering to what is shown in Fig. 7, being optimized resolution chart, the black line segment in the lower left corner is as in the figure
Scale, indicate that identical with the length of black line segment distance is 0.4 micron (μm).
In a kind of optimization method of mask parameters provided by the embodiments of the present application, resolution chart, initial mask three are first obtained
Parameter and primary light source parameter are tieed up, wherein initial mask three-dimensional parameter includes initial mask thickness and initial mask side wall angle, root
According to initial mask three-dimensional parameter, the available feasible mask three-dimensional parameter of multiple groups, wherein feasible mask three-dimensional parameter includes feasible
Mask thickness and feasible mask sidewalls angle, that is to say, that in the embodiment of the present application, feasible mask three-dimensional parameter is and initial mask
Three-dimensional parameter is relevant.
It is based on resolution chart and primary light source parameter again, obtains the corresponding feasible photoetching work of every group of feasible mask three-dimensional parameter
The corresponding feasible mask three-dimensional parameter of the maximum value of feasible lithographic process window is determined as optimal mask three-dimensional and joined by skill window
Number, i.e., using corresponding lithographic process window as standard, choose the optimal mask three-dimensional parameter in feasible mask three-dimensional parameter.Also
It is to say, mask three-dimensional parameter is optimized in the embodiment of the present application, the corresponding feasible photoetching of the mask three-dimensional parameter after optimization
Process window is bigger, can obtain higher photoetching resolution.
Optimization method based on a kind of mask three-dimensional parameter that above embodiments provide, the embodiment of the present application also provides one
Its working principle is described in detail with reference to the accompanying drawing in the optimization device of kind of mask three-dimensional parameter.
Referring to Fig. 8, which is a kind of structural block diagram of the optimization device of mask three-dimensional parameter provided by the embodiments of the present application,
The device includes：
Initial acquisition unit 110, it is described for obtaining resolution chart, primary light source parameter and initial mask three-dimensional parameter
Initial mask three-dimensional parameter includes initial mask thickness and initial mask side wall angle；
Feasible mask three-dimensional parameter acquiring unit 120, for it is feasible to obtain multiple groups according to the initial mask three-dimensional parameter
Mask three-dimensional parameter；The feasible mask three-dimensional parameter includes feasible mask thickness and feasible mask sidewalls angle；
Feasible lithographic process window acquiring unit 130 is obtained for being based on the resolution chart and the primary light source parameter
To the corresponding feasible lithographic process window of feasible mask three-dimensional parameter described in every group；
Optimal mask three-dimensional parameter determination unit 140, for the maximum value of the feasible lithographic process window is corresponding
Feasible mask three-dimensional parameter is determined as optimal mask three-dimensional parameter.
Optionally, the feasible lithographic process window acquiring unit, including：
Optimal Parameters acquiring unit is used for based on feasible mask three-dimensional parameter described in every group, respectively to the resolution chart
Collaboration optimization is carried out with the primary light source parameter, obtains the corresponding optimization figure of the feasible mask three-dimensional parameter and optimization light
Source parameter；
Feasible lithographic process window obtains subelement, for obtaining according to the optimization figure and the optimization light source parameters
To the corresponding feasible lithographic process window of the feasible mask three-dimensional parameter.
Optionally, described device further includes：
Initial lithographic process window acquiring unit, for according to the initial mask three-dimensional parameter, obtaining based on the survey
Attempt the initial lithographic process window of shape；
Judging unit, for judging whether the maximum value of the optimization lithographic process window is greater than or equal to the initial light
Carving technology window, if it is not, then activating the feasible mask three-dimensional parameter acquiring unit.
Optionally, the feasible mask three-dimensional parameter acquiring unit, including：
Feasible region determination unit, for determining the model of initial mask three-dimensional parameter according to the initial mask three-dimensional parameter
It encloses, the range of the feasible mask three-dimensional parameter includes the range of feasible mask thickness and/or the range at feasible mask sidewalls angle；
Feasible mask three-dimensional parameter obtains subelement, covers for determining that multiple groups are feasible within the scope of the mask three-dimensional parameter
Mould three-dimensional parameter.
Optionally, the acquisition initial mask three-dimensional parameter, including：
According to the optical parameter of mask, initial mask three-dimensional parameter is calculated.
In a kind of optimization device of mask parameters provided by the embodiments of the present application, resolution chart, initial mask three are first obtained
Parameter and primary light source parameter are tieed up, wherein initial mask three-dimensional parameter includes initial mask thickness and initial mask side wall angle, root
According to initial mask three-dimensional parameter, the available feasible mask three-dimensional parameter of multiple groups, wherein feasible mask three-dimensional parameter includes feasible
Mask thickness and feasible mask sidewalls angle, in the embodiment of the present application, feasible mask three-dimensional parameter is and initial mask three-dimensional parameter
It is relevant.
It is based on resolution chart and primary light source parameter again, obtains the corresponding feasible photoetching work of every group of feasible mask three-dimensional parameter
The corresponding feasible mask three-dimensional parameter of the maximum value of feasible lithographic process window is determined as optimal mask three-dimensional and joined by skill window
Number, i.e., using corresponding lithographic process window as standard, choose the optimal mask three-dimensional parameter in feasible mask three-dimensional parameter.Also
It is to say, mask three-dimensional parameter is optimized in the embodiment of the present application, the corresponding feasible photoetching of the mask three-dimensional parameter after optimization
Process window is bigger, can obtain higher photoetching resolution.
When introducing the element of various embodiments of the application, the article " one ", "one", " this " and " described " be intended to
Indicate one or more elements.Word "include", "comprise" and " having " are all inclusive and mean in addition to listing
Except element, there can also be other elements.
It should be noted that those of ordinary skill in the art will appreciate that realizing the whole in above method embodiment or portion
Split flow is relevant hardware can be instructed to complete by computer program, and the program can be stored in a computer
In read/write memory medium, the program is when being executed, it may include such as the process of above-mentioned each method embodiment.Wherein, the storage
Medium can be magnetic disk, CD, read-only memory (Read-Only Memory, ROM) or random access memory (Random
Access Memory, RAM) etc..
All the embodiments in this specification are described in a progressive manner, same and similar portion between each embodiment
Dividing may refer to each other, and each embodiment focuses on the differences from other embodiments.Especially for device reality
For applying example, since it is substantially similar to the method embodiment, so describing fairly simple, related place is referring to embodiment of the method
Part explanation.The apparatus embodiments described above are merely exemplary, wherein described be used as separate part description
Unit and module may or may not be physically separated.Furthermore it is also possible to select it according to the actual needs
In some or all of unit and module achieve the purpose of the solution of this embodiment.Those of ordinary skill in the art are not paying
In the case where creative work, it can understand and implement.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (10)
1. a kind of optimization method of mask parameters, which is characterized in that the method includes：
Resolution chart, initial mask three-dimensional parameter and primary light source parameter are obtained, the initial mask three-dimensional parameter includes initial
Mask thickness and initial mask side wall angle；
According to the initial mask three-dimensional parameter, the feasible mask three-dimensional parameter of multiple groups is obtained；The feasible mask three-dimensional parameter packet
Include feasible mask thickness and feasible mask sidewalls angle；
Based on the resolution chart and the primary light source parameter, obtain every group described in feasible mask three-dimensional parameter it is corresponding feasible
Lithographic process window；
The corresponding feasible mask three-dimensional parameter of the maximum value of the feasible lithographic process window is determined as optimal mask three-dimensional ginseng
Number.
2. the method according to claim 1, wherein described joined based on the resolution chart and the primary light source
Number, obtain every group described in the corresponding feasible lithographic process window of feasible mask three-dimensional parameter, including：
Based on feasible mask three-dimensional parameter described in every group, the resolution chart and the primary light source parameter are cooperateed with respectively
Optimization obtains the corresponding optimization figure of the feasible mask three-dimensional parameter and optimization light source parameters；
According to the optimization figure and the optimization light source parameters, the corresponding feasible photoetching of the feasible mask three-dimensional parameter is obtained
Process window.
3. method according to claim 1 or 2, which is characterized in that the method also includes：
Based on the resolution chart and the primary light source parameter, the corresponding initial lithographic of the initial mask three-dimensional parameter is obtained
Process window；
Judge whether the maximum value of the feasible lithographic process window is greater than or equal to the initial lithographic process window, if it is not,
The step of execution is then returned according to the initial mask three-dimensional parameter, obtains multiple groups feasible mask three-dimensional parameter.
4. method according to claim 1 or 2, which is characterized in that it is described according to the initial mask three-dimensional parameter, it obtains
The feasible mask three-dimensional parameter of multiple groups, including：
The range of initial mask three-dimensional parameter is determined according to the initial mask three-dimensional parameter, the feasible mask three-dimensional parameter
Range includes the range of feasible mask thickness and/or the range at feasible mask sidewalls angle；
The feasible mask three-dimensional parameter of multiple groups is determined within the scope of the mask three-dimensional parameter.
5. method according to claim 1 or 2, which is characterized in that the acquisition initial mask three-dimensional parameter, including：
According to the optical property of mask, initial mask three-dimensional parameter is calculated.
6. a kind of optimization device of mask parameters, which is characterized in that described device includes：
Initial acquisition unit, for obtaining resolution chart, initial mask three-dimensional parameter and primary light source parameter, the initial mask
Three-dimensional parameter includes initial mask thickness and initial mask side wall angle；
Feasible mask three-dimensional parameter acquiring unit, for obtaining the feasible mask three of multiple groups according to the initial mask three-dimensional parameter
Tie up parameter；The feasible mask three-dimensional parameter includes feasible mask thickness and feasible mask sidewalls angle；
Feasible lithographic process window acquiring unit obtains every group for being based on the resolution chart and the primary light source parameter
The corresponding feasible lithographic process window of the feasible mask three-dimensional parameter；
Optimal mask three-dimensional parameter determination unit, for by the corresponding feasible mask of the maximum value of the feasible lithographic process window
Three-dimensional parameter is determined as optimal mask three-dimensional parameter.
7. device according to claim 6, which is characterized in that the feasible lithographic process window acquiring unit, including：
Optimal Parameters acquiring unit is used for based on feasible mask three-dimensional parameter described in every group, respectively to the resolution chart and institute
It states primary light source parameter and carries out collaboration optimization, obtain the corresponding optimization figure of the feasible mask three-dimensional parameter and optimization light source ginseng
Number；
Feasible lithographic process window obtains subelement, for obtaining institute according to the optimization figure and the optimization light source parameters
State the corresponding feasible lithographic process window of feasible mask three-dimensional parameter.
8. device according to claim 6 or 7, which is characterized in that described device further includes：
Initial lithographic process window acquiring unit, for according to the initial mask three-dimensional parameter, obtaining based on the test chart
The initial lithographic process window of shape；
Judging unit, for judging whether the maximum value of the feasible lithographic process window is greater than or equal to the initial lithographic work
Skill window, if it is not, then activating the feasible mask three-dimensional parameter acquiring unit.
9. device according to claim 6 or 7, which is characterized in that the feasible mask three-dimensional parameter acquiring unit, packet
It includes：
Feasible region determination unit, for determining the range of initial mask three-dimensional parameter according to the initial mask three-dimensional parameter,
The range of the feasible mask three-dimensional parameter includes the range of feasible mask thickness and/or the range at feasible mask sidewalls angle；
Feasible mask three-dimensional parameter obtains subelement, for determining the feasible mask three of multiple groups within the scope of the mask three-dimensional parameter
Tie up parameter.
10. device according to claim 6 or 7, which is characterized in that the acquisition initial mask three-dimensional parameter, including：
According to the optical property of mask, initial mask three-dimensional parameter is calculated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810967757.6A CN108919601A (en) | 2018-08-23 | 2018-08-23 | Mask parameter optimization method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810967757.6A CN108919601A (en) | 2018-08-23 | 2018-08-23 | Mask parameter optimization method and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108919601A true CN108919601A (en) | 2018-11-30 |
Family
ID=64404436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810967757.6A Pending CN108919601A (en) | 2018-08-23 | 2018-08-23 | Mask parameter optimization method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108919601A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112765893A (en) * | 2021-01-27 | 2021-05-07 | 广东省大湾区集成电路与系统应用研究院 | Mask side wall angle control method, system, device and medium based on genetic algorithm |
| WO2023070738A1 (en) * | 2021-10-29 | 2023-05-04 | 中国科学院微电子研究所 | Mask parameter optimization method and apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090021718A1 (en) * | 2007-07-17 | 2009-01-22 | Melville David O S | Method, Computer Program, Apparatus and System Providing Printing for an Illumination Mask for Three-Dimensional Images |
| US20090244512A1 (en) * | 2008-03-25 | 2009-10-01 | Shoji Mimotogi | Lithography process window analyzing method and analyzing program |
| CN102662309A (en) * | 2005-09-09 | 2012-09-12 | Asml荷兰有限公司 | System and method for mask verification using individual mask error model |
| CN105574293A (en) * | 2016-02-01 | 2016-05-11 | 中国科学院微电子研究所 | EUV design rule, light source and mask combined optimization and imaging modeling method |
| CN106338891A (en) * | 2015-07-17 | 2017-01-18 | 中芯国际集成电路制造(上海)有限公司 | Source-mask optimization method and source-mask-polarization optimization method |
-
2018
- 2018-08-23 CN CN201810967757.6A patent/CN108919601A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102662309A (en) * | 2005-09-09 | 2012-09-12 | Asml荷兰有限公司 | System and method for mask verification using individual mask error model |
| US20090021718A1 (en) * | 2007-07-17 | 2009-01-22 | Melville David O S | Method, Computer Program, Apparatus and System Providing Printing for an Illumination Mask for Three-Dimensional Images |
| US20090244512A1 (en) * | 2008-03-25 | 2009-10-01 | Shoji Mimotogi | Lithography process window analyzing method and analyzing program |
| CN106338891A (en) * | 2015-07-17 | 2017-01-18 | 中芯国际集成电路制造(上海)有限公司 | Source-mask optimization method and source-mask-polarization optimization method |
| CN105574293A (en) * | 2016-02-01 | 2016-05-11 | 中国科学院微电子研究所 | EUV design rule, light source and mask combined optimization and imaging modeling method |
Non-Patent Citations (1)
| Title |
|---|
| 董立松: "矢量光刻成像理论与分辨率增强技术研究", 《中国博士学位论文全文数据库 信息技术辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112765893A (en) * | 2021-01-27 | 2021-05-07 | 广东省大湾区集成电路与系统应用研究院 | Mask side wall angle control method, system, device and medium based on genetic algorithm |
| CN112765893B (en) * | 2021-01-27 | 2023-04-25 | 广东省大湾区集成电路与系统应用研究院 | Mask side wall angle control method, system, equipment and medium based on genetic algorithm |
| WO2023070738A1 (en) * | 2021-10-29 | 2023-05-04 | 中国科学院微电子研究所 | Mask parameter optimization method and apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7458056B2 (en) | Effective proximity effect correction methodology | |
| KR101096145B1 (en) | Methods for performing model-based lithography guided layout design | |
| KR101226646B1 (en) | Selection of optimum patterns in a design layout based on diffration signature analysis | |
| US7793252B2 (en) | Mask pattern preparation method, semiconductor device manufacturing method and recording medium | |
| JP2006189845A (en) | Method and apparatus for placing assist feature | |
| JP6192372B2 (en) | Mask pattern creation method, program, and information processing apparatus | |
| TW436666B (en) | Design rule generation system and recording medium recording program thereof | |
| US20050144583A1 (en) | Method and data-processing system for rule-based optical proximity correction with simulataneous scatter bar insertion | |
| JP2005037945A (en) | Generating mask pattern for alternating phase-shift mask lithography | |
| US7820346B2 (en) | Method for collecting optical proximity correction parameter | |
| US9779186B2 (en) | Methods for performing model-based lithography guided layout design | |
| KR20110117404A (en) | Method for manufacturing semiconductor device using unified optical proximity correction | |
| CN108919601A (en) | Mask parameter optimization method and device | |
| US7611806B2 (en) | Sub-wavelength diffractive elements to reduce corner rounding | |
| CN101526735B (en) | Designing method of photo-mask and method of manufacturing semiconductor device using the photo-mask | |
| CN104698761A (en) | OPC model calibration method based on area | |
| CN108170006B (en) | Litho machine matching process | |
| CN105116683A (en) | Calibrating method of optical proximity effect correction defocused model | |
| CN111983887B (en) | Sub-resolution auxiliary graph acquisition method | |
| CN115903367A (en) | Method for adding SRAF, mask and manufacturing method | |
| US20230168576A1 (en) | Full-chip cell critical dimension correction method and method of manufacturing mask using the same | |
| JP2011228586A (en) | Generation method of evaluation map, system, method of manufacturing semiconductor device, and program | |
| JP2006156864A (en) | Resist pattern line width calculating method, mask pattern line width correction method, optical proximity effect correction method, exposure mask fabricating method, electron drawing method for fabricating the exposure mask, exposure method, and semiconductor device manufacturing method | |
| Tanaka et al. | Impact of OPC aggressiveness on mask manufacturability | |
| WO2023285071A1 (en) | Pattern selection for source mask optimization and target optimization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181130 |
|
| RJ01 | Rejection of invention patent application after publication |