CN108890138B - Ultrafast laser polishing processing method for ceramic matrix composite - Google Patents
Ultrafast laser polishing processing method for ceramic matrix composite Download PDFInfo
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- CN108890138B CN108890138B CN201810785012.8A CN201810785012A CN108890138B CN 108890138 B CN108890138 B CN 108890138B CN 201810785012 A CN201810785012 A CN 201810785012A CN 108890138 B CN108890138 B CN 108890138B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract
一种用于陶瓷基复合材料的超快激光抛光加工方法，先将SiC陶瓷基复合材料加工样片固定在激光加工设备上，激光加工设备包括光路系统和加工平台，光路系统包括飞秒激光器，飞秒激光器的激光经过反射镜、扩束镜、光阑、振镜及场镜组件后作用于加工平台上；加工平台包括相对于工作台在x、y和z轴方向的三维运动机构以及夹具，在三维运动机构中安装角位移台，通过调节角位移台能够改变y轴方向与工作台法线夹角大小，以获得大的激光入射角；通过计算机分别控制飞秒激光器的激光参数、振镜的振镜图形扫描及三维运动机构的移动对加工样片进行抛光；本发明利用激光与加工平台协同作业，根据需要调节横向纵向的光斑重叠率，保证加工的均匀性，加工效率高。
An ultra-fast laser polishing processing method for ceramic matrix composite materials. First, a SiC ceramic matrix composite material processing sample is fixed on a laser processing equipment. The laser processing equipment includes an optical path system and a processing platform. The laser of the second laser acts on the processing platform after passing through the reflector, beam expander, diaphragm, galvanometer and field lens components; An angular displacement stage is installed in the three-dimensional motion mechanism, and the angle between the y-axis direction and the normal line of the worktable can be changed by adjusting the angular displacement stage, so as to obtain a large laser incident angle; the laser parameters and galvanometer of the femtosecond laser are respectively controlled by the computer. The galvanometer pattern scanning and the movement of the three-dimensional motion mechanism are used to polish the processed samples; the present invention uses the laser and the processing platform to cooperate to adjust the horizontal and vertical beam spot overlap ratio according to the needs, so as to ensure the uniformity of processing and high processing efficiency.
Description
Technical Field
The invention relates to the technical field of laser processing of ceramic matrix composites, in particular to an ultrafast laser polishing processing method for ceramic matrix composites.
Background
The SiC ceramic matrix composite material has the advantages of high temperature resistance, high specific strength, high specific modulus and oxidation corrosion resistance of SiC ceramic, overcomes the defects of low fracture toughness and easy catastrophic damage of the SiC ceramic under the reinforcing and toughening effects of SiC fibers, improves the reliability and the use temperature of the material, and is widely applied to various fields such as aerospace and the like. Due to the fact that the hardness of the material is high, the traditional processing mode is difficult to achieve micro-nano processing of high-precision polishing.
Compared with the traditional processing mode, the ultrashort pulse laser processing has the characteristics of low processing damage, high processing precision, wide processing application range, cold processing and the like, and can realize high-precision micro-nano processing. At present, the domestic polishing method adopting laser is still in the preliminary study stage, most of the polishing method is carried out on the existing laser processing equipment, the included angle between the laser on the laser processing equipment and the normal line of the surface of a processed material is 0 degree, the motion of the laser and the action of a processing platform work relatively independently, for the processing of the whole plane, especially for the processing with oblique angle incidence, the transverse and longitudinal uniformity of the polished surface is difficult to ensure, the processing efficiency is low, the operation difficulty is large, the processing effect is not obvious, and the experimental error is large.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide an ultrafast laser polishing processing method for a ceramic matrix composite, which utilizes the cooperative operation of laser and a processing platform and is matched with the processing platform to realize the wide-angle change of the included angle between the laser and the normal line of the surface of a processed material from 70 degrees to 90 degrees, so that the processing in the transverse direction and the longitudinal direction is cooperatively carried out, the overlapping rate of transverse light spots and longitudinal light spots can be adjusted according to the requirement, the processing uniformity is ensured, and the processing efficiency is high.
In order to achieve the purpose, the invention adopts the technical scheme that:
an ultrafast laser polishing processing method for ceramic matrix composite material comprises the following steps:
1) fixing a SiC ceramic matrix composite processing sample wafer on laser processing equipment, wherein the laser processing equipment comprises a light path system and a processing platform, the light path system comprises a femtosecond laser 1, and laser emitted by the femtosecond laser 1 sequentially passes through a reflector 2, a beam expander 3, a diaphragm 4, a vibrating mirror 5 and a field lens 6 assembly and then acts on the processing platform;
the processing platform comprises a three-dimensional movement mechanism 7 and a clamp 9, wherein the three-dimensional movement mechanism 7 corresponds to the working platform in the x-axis direction, the y-axis direction and the z-axis direction, the clamp is arranged on the three-dimensional movement mechanism 7 and is used for clamping a sample to be processed, the x-axis direction and the z-axis direction are mutually vertical, an angular displacement platform 8 is arranged between the movement platform in the y-axis direction and the movement platform in the x-axis direction in the three-dimensional movement mechanism 7, the included angle between the y-axis direction and the normal line of the working platform can be changed by adjusting the angular displacement platform 8, the adjusting range is 0-20 degrees, and the included angle corresponding to the laser;
the laser parameters of the femtosecond laser 1, the galvanometer graph scanning of the galvanometer 5 and the movement of the three-dimensional motion mechanism 7 are respectively controlled by a computer 10;
2) the output laser wavelength of the femtosecond laser 1 is regulated to 1064nm through the computer 10, the output pulse width is 240fs, the single-pulse energy is 100 muJ-200 muJ, and the repetition frequency is 20kHz-100 kHz; controlling the on-off of the laser of the femtosecond laser 1 by using a computer 10, and focusing the laser into a circular spot by using a galvanometer 5 and a field lens 6 to process a sample wafer;
3) drawing a scanning path for controlling the galvanometer 5 on a computer 10, wherein the scanning path is a straight line, the number of times of repetition is set according to the processing area, the scanning speed corresponds to the repetition frequency, the setting range is 100mm/s-1000mm/s, the equal spatial overlapping rate of pulse laser is ensured, and the jumping speed and the scanning speed are kept consistent;
4) controlling the three-dimensional motion mechanism 7 by using the computer 10, adjusting the laser position to an appointed processing initial position, setting the speed range of the three-dimensional motion mechanism 7 in the y-axis direction to be 30-300 mu m by calculation in order to ensure that the longitudinal space overlapping rate of the pulse laser is equal, and then setting the required moving distance, wherein the moving direction is the direction leading the processing direction of the processing sample wafer to be from top to bottom;
5) and polishing the processing sample wafer by using the adjusted laser parameters of the femtosecond laser 1, the motion parameters of the galvanometer 5 and the movement parameters of the three-dimensional mechanism motion 7, so that the surface roughness of the material is reduced, and a polishing plane is obtained.
The effective results of the invention are as follows:
the included angle between the y-axis direction and the normal line of the workbench is adjusted, so that a large laser inclined incident angle is obtained, the spot area is increased, the energy density is reduced, most of laser energy is absorbed by surface wave crests, meanwhile, the laser beams are blocked by the wave crests to weaken the etching of the laser beams on the wave troughs, the surface is more uniform, and the processing quality is obviously improved; the galvanometer 5 and the three-dimensional motion mechanism 7 act in a synergistic manner, so that the processing in the transverse and longitudinal directions is carried out in a synergistic manner, the transverse and longitudinal light spot overlapping rate can be adjusted as required, and the processing efficiency and accuracy are improved; meanwhile, the problem that the focal plane of the laser is difficult to coincide with the target processing plane during the incidence processing with an inclined angle is solved by controlling the movement along the y-axis direction, and the uniformity of laser parameters on the processing plane is ensured. Guarantee
Drawings
Fig. 1 is a schematic structural view of a laser processing apparatus employed in the present invention.
FIG. 2 is a surface topography of a green ceramic matrix composite tooling coupon in an example embodiment.
FIG. 3 is a surface topography of a ceramic matrix composite machined coupon obtained after polishing in the example.
FIG. 4 is a graph showing a comparison between the surface topography and the original topography of a ceramic matrix composite machined sample wafer obtained after the polishing process in accordance with the example.
Detailed Description
The invention is described in detail below with reference to the drawings and examples
An ultrafast laser polishing processing method for ceramic matrix composite material comprises the following steps:
1) fixing a 30mm by 30mm SiC ceramic matrix composite sample wafer on laser processing equipment, referring to fig. 1, wherein the laser processing equipment comprises an optical path system and a processing platform, the optical path system comprises a femtosecond laser 1, and laser emitted by the femtosecond laser 1 sequentially passes through a reflector 2, a beam expander 3, a diaphragm 4, a galvanometer 5 and a field lens 6 assembly and then acts on the processing platform;
the processing platform comprises a three-dimensional movement mechanism 7 and a clamp 9, wherein the three-dimensional movement mechanism 7 corresponds to the working platform in the x-axis direction, the y-axis direction and the z-axis direction, the clamp is arranged on the three-dimensional movement mechanism 7 and is used for clamping a sample to be processed, the x-axis direction and the z-axis direction are mutually vertical, an angular displacement platform 8 is arranged between the movement platform in the y-axis direction and the movement platform in the x-axis direction in the three-dimensional movement mechanism 7, the included angle between the y-axis direction and the normal line of the working platform can be changed by adjusting the angular displacement platform 8, the adjusting range is 0-20 degrees, and the included angle corresponding to the laser;
the angular displacement table 8 is adjusted to 10 degrees in the embodiment, and the included angle between the laser and the normal line of the surface of the processing material is 80 degrees;
the laser parameters of the femtosecond laser 1, the galvanometer graph scanning of the galvanometer 5 and the movement of the three-dimensional motion mechanism 7 are respectively controlled by a computer 10;
2) the output laser wavelength of the femtosecond laser 1 is regulated to 1064nm through the computer 10, the output pulse width is 240fs, the single-pulse energy is 100 muJ-200 muJ, and the repetition frequency is 20kHz-100 kHz; controlling the on-off of the laser of the femtosecond laser 1 by using a computer 10, and focusing the laser into a circular spot by using a galvanometer 5 and a field lens 6 to process a sample wafer;
in the embodiment, the single pulse energy is adjusted to be 100 muJ, and the repetition frequency is 40 kHz;
3) drawing a scanning path for controlling the galvanometer 5 on a computer 10, wherein the scanning path is a straight line, the number of times of repetition is set according to the processing area, the scanning speed corresponds to the repetition frequency, the setting range is 100mm/s-1000mm/s, the equal spatial overlapping rate of pulse laser is ensured, and the jumping speed and the scanning speed are kept consistent;
in the embodiment, the length of the scanning path is 15mm, the number of times of repetition is set to 10000 according to the processing area, the scanning speed corresponds to the repetition frequency and is set to 200mm/s, the spatial overlapping rate of the pulse laser is ensured to be equal, and the jumping speed is also 200 mm/s;
4) controlling the three-dimensional motion mechanism 7 by using the computer 10, adjusting the laser position to an appointed processing initial position, setting the speed range of the three-dimensional motion mechanism 7 in the y-axis direction to be 30-300 mu m by calculation in order to ensure that the longitudinal space overlapping rate of the pulse laser is equal, and then setting the required moving distance, wherein the moving direction is the direction leading the processing direction of the processing sample wafer to be from top to bottom;
the speed of the three-dimensional motion mechanism 7 in the y-axis direction of the embodiment is 60 μm/s, and the moving distance in the y-axis direction is 15 mm;
5) and polishing the processing sample wafer by using the adjusted laser parameters of the femtosecond laser 1, the motion parameters of the galvanometer 5 and the movement parameters of the three-dimensional mechanism motion 7, and reducing the surface roughness of the material from Ra4.0 mu m to Ra1.4 mu m to obtain a polished plane.
Referring to fig. 2, fig. 3 and fig. 4, fig. 2 shows the surface topography of the green ceramic matrix composite processed sample wafer of the present embodiment, the original surface of the material is rough, has distinct peaks and valleys, and is not uniformly distributed; FIG. 3 shows the surface topography of a sample wafer processed with a ceramic matrix composite obtained by polishing according to the embodiment, wherein the surface quality of the material is significantly improved, the peak portion is flattened, the etching of the wave trough is blocked, and the polished surface is obtained without generating defects such as cracks, edge breakage and the like; FIG. 4 is a comparison graph of the surface topography of the ceramic matrix composite processed sample wafer obtained after polishing in the example with the original topography, and the material surface polishing effect is significant before and after processing.
Claims (1)
1. An ultrafast laser polishing processing method for ceramic matrix composite material is characterized by comprising the following steps:
1) fixing a SiC ceramic matrix composite processing sample wafer on laser processing equipment, wherein the laser processing equipment comprises a light path system and a processing platform, the light path system comprises a femtosecond laser (1), and laser emitted by the femtosecond laser (1) sequentially passes through a reflector (2), a beam expander (3), a diaphragm (4), a galvanometer (5) and a field lens (6) assembly and then acts on the processing platform;
the machining platform comprises a three-dimensional movement mechanism (7) and a clamp (9), wherein the three-dimensional movement mechanism (7) corresponds to the workbench in the x-axis direction, the y-axis direction and the z-axis direction, the clamp is arranged on the three-dimensional movement mechanism (7) and is used for clamping a machining sample wafer, the x-axis direction and the z-axis direction are mutually vertical, an angular displacement platform (8) is arranged between the movement platform in the y-axis direction and the movement platform in the x-axis direction in the three-dimensional movement mechanism (7), the included angle between the y-axis direction and the normal of the workbench can be changed by adjusting the angular displacement platform (8), the adjusting range is 0-20 degrees, and the included angle between the laser and the normal of;
laser parameters of the femtosecond laser (1), galvanometer graph scanning of the galvanometer (5) and movement of the three-dimensional motion mechanism (7) are respectively controlled by a computer (10);
2) the laser wavelength of the output of the femtosecond laser (1) is regulated to 1064nm through a computer (10), the output pulse width is 240fs, the single-pulse energy is 100 muJ, and the repetition frequency is 20kHz-100 kHz; controlling the laser on-off of the femtosecond laser (1) by using a computer (10), and focusing the laser into a circular spot by using a galvanometer (5) and a field lens (6) to process a sample wafer;
3) drawing a scanning path for controlling the galvanometer (5) on a computer (10), wherein the scanning path is a straight line, the number of times of repetition is set according to the processing area, the scanning speed corresponds to the repetition frequency, the setting range is 100mm/s-1000mm/s, the spatial overlapping rate of pulse laser is ensured to be equal, and the jumping speed is kept consistent with the scanning speed;
4) controlling a three-dimensional motion mechanism (7) by using a computer (10), adjusting the laser position to a specified processing starting position, setting the speed range of the three-dimensional motion mechanism (7) in the y-axis direction to be 30-300 mu m by calculation in order to ensure that the longitudinal space overlapping rates of pulse laser are equal, and then setting a required moving distance, wherein the moving direction is the direction leading the processing direction of a processed sample wafer to be from top to bottom;
5) and polishing the processed sample wafer by using the adjusted laser parameters of the femtosecond laser (1), the motion parameters of the galvanometer (5) and the movement parameters of the three-dimensional mechanism motion (7), so that the surface roughness of the material is reduced, and a polished plane is obtained.
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| CN109514076B (en) | 2018-12-18 | 2020-04-14 | 北京工业大学 | A process method for picosecond-nanosecond laser composite asynchronous polishing of ceramics |
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| CN115464256A (en) * | 2022-10-31 | 2022-12-13 | 深圳腾睿微电子科技有限公司 | Processing equipment |
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| CN101664894B (en) * | 2009-02-03 | 2011-11-09 | 广东工业大学 | Sapphire polishing device and polishing method thereof |
| US10343237B2 (en) * | 2014-02-28 | 2019-07-09 | Ipg Photonics Corporation | System and method for laser beveling and/or polishing |
| CN105945422B (en) * | 2016-06-12 | 2018-01-05 | 西安中科微精光子制造科技有限公司 | A kind of ultrafast laser microfabrication system |
| CN106001927B (en) * | 2016-07-05 | 2018-03-23 | 温州大学激光与光电智能制造研究院 | One kind measurement machining integrated laser planarizing polishing method |
| CN206779725U (en) * | 2017-05-27 | 2017-12-22 | 苏州大学 | A kind of Laser Processing fixture |
| CN107378276B (en) * | 2017-08-02 | 2019-01-18 | 中国科学院光电研究院 | A kind of method of laser repairing and polishing ceramic part |
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