CN108845018A - Galvanic cell corrosion detection device - Google Patents
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- 230000007797 corrosion Effects 0.000 title claims abstract description 22
- 238000005260 corrosion Methods 0.000 title claims abstract description 22
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- 239000003990 capacitor Substances 0.000 claims description 15
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- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 15
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- 239000011150 reinforced concrete Substances 0.000 description 10
- 238000009412 basement excavation Methods 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910001567 cementite Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- KSOKAHYVTMZFBJ-UHFFFAOYSA-N iron;methane Chemical compound C.[Fe].[Fe].[Fe] KSOKAHYVTMZFBJ-UHFFFAOYSA-N 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001294 Reinforcing steel Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G01R31/378—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC] specially adapted for the type of battery or accumulator
- G01R31/38—Primary cells, i.e. not rechargeable
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Abstract
the invention discloses a galvanic cell corrosion detection device, which comprises a main control module, a control gating module, an amplification filter circuit module, a power supply module and a standard voltage module, wherein the main control module is an STM32 singlechip, U2 is CD 40B, U3 is L M358, and U4 is TPS 60400.
Description
The application is a divisional application of an invention patent application which is filed by Qingdao university of Engineers in Qingdao and has an application date of 2016, 5 and 10 and an application number of 201610307556.4 and is named as a galvanic cell corrosion detection device.
Technical Field
The present invention relates to a galvanic cell corrosion detection device, and more particularly, to a device for determining whether a galvanic cell is corroded by measuring a voltage, a current, etc. of the galvanic cell (reinforced concrete).
Background
In recent years, along with the increase of the demand of the construction industry for reinforced concrete, people pay more and more attention to the detection of the corrosion degree of the reinforced concrete. Reinforced concrete corrosion is a spontaneously occurring electrochemical reaction. If the steel bar is placed in a humid environment, the surface of the steel bar is covered with a layer of electrolyte water film, and the main components of the steel bar comprise: ferrite, cementite, free graphite, etc. because of the difference in electrode potentials of these components, the surface layer of the steel reinforcement constitutes a galvanic cell in an electrolyte solution, with the ferrite as the anode and the cementite as the cathode. When moisture adheres to the surface of the reinforcing steel bar, oxidation reaction and reduction reaction occur at a constant rate. Wherein, the oxidation reaction is an anode reaction of iron ionization, and the reduction reaction is a cathode reaction of solution oxygen reduction.
The existing method for detecting corrosion of the original battery in the reinforced concrete is divided into an excavation method and a non-excavation method. The excavation method excavates concrete to confirm the corrosion of the galvanic cell. The non-excavation method is to detect whether the galvanic cell is corroded on the premise of not excavating the reinforced concrete. The non-excavation method has the characteristics of low construction cost, no damage to a reinforced concrete structure and the like, so that the non-excavation method is worthy of further research and development.
Under the above background, it is necessary to develop a device for detecting corrosion of a primary battery, which can measure the voltage, current, etc. of the primary battery, and perform a correlation process on the measured data, so as to simultaneously measure a plurality of values, and comprehensively analyze whether the primary battery is corroded.
Disclosure of Invention
The invention aims to provide a galvanic cell corrosion detection device, which takes a single chip microcomputer as a main control module, realizes the measurement of voltage, current and the like of a (reinforced concrete) galvanic cell through a detection circuit, can realize the simultaneous measurement of a plurality of numerical values after carrying out relevant processing on measurement data, and is beneficial to comprehensively analyzing whether the galvanic cell is corroded.
A kind of galvanic cell corrodes the checkout gear, including top management module, control the module of gating, amplifies the module of filter circuit, power module and standard voltage module; wherein,
the main control module is an STM32 singlechip;
the control gating module comprises resistors R1-R2, capacitors C7-C8 and an integrated circuit U2; by of U2 is connected to the anode 2 of the galvanic cell; the bx end of U2 is suspended; r1 is linked to cy of U2, and the other end is linked to one end of R2, INH and V of U2EEThe cathode of the primary battery is connected with the ground; the other end of R2 is Cx of U2; selecting cy or cx of U2 by an STM32 singlechip to link 3 pins of input A of U3 respectively; cx OR cy of U2 connected to ax OR ay of U2; v of U2SSOUT connected to U4; a, B, C, V of U2DDThe end is connected with the STM32 singlechip; v with one end of C7 or C8 connected with U2DDOne end and the other end are connected with the ground; the ax end of U2 is connected to the cathode of the primary cell, and the ay end of U2 is connected to the anode 1 of the primary cell;
the amplifying and filtering circuit module comprises resistors R3-R7, an integrated circuit U3, capacitors C1-C3, C9-C10 and a diode D1; one end of the C1 is connected to the 3 pin of the Inputs A of the U3, and the other end is connected to one end of the C2, one end of the R6, the anode of the diode and the ground; the Output A and input A2 pins of U3 are connected to one end of R3, and the other end of R3 is connected to the input B pin 5 of U3, one end of R4 and the other end of C2; the other end of the R4 is connected with the +3.3V power supply end of the STM32 singlechip; the 6 pin of Output B of U3 is connected to one end of C3, one end of R5 and the other end of R6; the 7 pin of Output B of U3 is connected to one end of R7, the other end of C3, the other end of R5 and the negative terminal of the diode; the other end of the R7 is connected with the STM32 singlechip; v with one end of C7 or C8 connected with U3CCOne end and the other end are connected with the ground; vCCThe +5V power supply end is connected with the STM32 singlechip;
the power supply module comprises an integrated circuit U4 and capacitors C4-C6; one end of the C4 is connected to the OUT of the U4, and the other end is connected to the GND terminal of the U4, one end of the C5 and the ground; the other end of the C5 is connected with the IN end of the U4 and the +5V power supply end of the STM32 singlechip; one end of the C6 is connected to the C1-end of U4, and the other end is connected to the C1+ end of U4;
the standard voltage module comprises resistors R8-R13, capacitors C11-C12 and an integrated circuit U5; one end of R8 and bx OR by of U2 are connected to the Output A end of U5, and the other end of R8 is connected to one end of R9 and 2 pin of Input A end of U5; the other end of R9 is grounded with one end of R11; one end of R10 is connected with the 3 pins of the input A end of U5, and the other end is connected with the V of U5EEthe/GND terminal and the OUT terminal of U4; one end of the R13 is connected with the 3 pin of the input A end of the U5, and the other end is connected with the output B end of the U5 and the 6 pin of the input B end; the other end of the R11 is connected with a pin 5 at the B end of the Inputs and one end of the R12; the other end of the R12 is connected with an STM32 singlechip; one end of C11 is connected with V of U5CCOne end and the other end are grounded; v of U5CCThe end is connected with the +5V power supply end of the STM32 singlechip.
The U2 is CD4053B, the U3 is LM358, and the U4 is TPS 60400.
And one end of the C1 is 10000pf, one end of the C1 is connected to the 3 pins of the Inputs A of the U3, and the other end of the C1 is connected to GND (ground potential), so that a filter circuit is formed and is used for filtering out high-frequency signals.
The R4 is 65k and is a pull-up resistor; r5 ═ 55k, and is the feedback resistance; r6 ═ 50 k; c3 ═ 150pf, filter capacitance; the calculation formula of the amplification factor of the amplifying circuit is as follows:
V1＝3.3V,Viiis the input voltage.
Compared with the prior art, the invention has the beneficial effects that: the detection circuit is controlled by the STM32 singlechip, so that the voltage, the current and the like of the (reinforced concrete) primary cell can be detected simultaneously, whether the primary cell is corroded can be comprehensively analyzed by comparing the detection data with the obtained reference data, the operation is simple, and the measurement result is more accurate. The invention also has the advantages of low construction cost, simple operation, no damage to the reinforced concrete structure and the like.
Drawings
The invention is further described with reference to the accompanying drawings, which are not intended to limit the invention in any way.
Fig. 1 is a block diagram showing the overall structure of the galvanic corrosion detection apparatus of the present invention.
Fig. 2 is a schematic diagram of a specific circuit principle of an embodiment of the galvanic cell corrosion detection apparatus of the present invention, and the main control module and the galvanic cell are not shown.
Fig. 3 is a diagram showing the simulation result of the circuit of the filter type regulator when the current of the primary battery is measured according to the present invention (R is 10k, and R is the internal resistance of the primary battery).
Fig. 4 is a schematic diagram of a specific circuit principle of another embodiment of the galvanic cell corrosion detection apparatus according to the present invention, and the main control module and the galvanic cell are not shown.
Fig. 5 is a graph of voltage simulation of the Output a of U5 in the manner of fig. 4.
Detailed Description
Example 1
Referring to fig. 1, 2 and 3, a galvanic cell corrosion detection apparatus includes a main control module and a detection portion (circuit). The detection part is provided with a control gating module, an amplification filter circuit module and a power supply module.
The main control module is an STM32 single chip microcomputer.
The control gating module comprises resistors R1-R2, capacitors C7-C8 and an integrated circuit U2; by of U2 is connected to the anode 2 of the galvanic cell; the bx end of U2 is suspended; r1 is linked to cy of U2, and the other end is linked to one end of R2, INH of U2 andVEEthe cathode of the primary battery is connected with the ground; the other end of R2 is Cx of U2; selecting cy or cx of U2 by an STM32 singlechip to link 3 pins of input A of U3 respectively; cx OR cy of U2 connected to ax OR ay of U2; v of U2SSOUT connected to U4; A. b, C, VDDThe end is connected with the STM32 singlechip; v with one end of C7 or C8 connected with U2DDOne end and the other end are connected with the ground; the ax end of U2 is connected to the cathode of the primary cell; the ay terminal of U2 is connected to the anode 1 of the cell.
The amplifying and filtering circuit module comprises resistors R3-R7, an integrated circuit U3, capacitors C1-C3, C9-C10 and a diode D1; one end of the C1 is connected to the 3 pin of the Inputs A of the U3, and the other end is connected to one end of the C2, one end of the R6, the anode of the diode and the ground; the Output A and input A2 pins of U3 are connected to one end of R3, and the other end of R3 is connected to the input B pin 5 of U3, one end of R4 and the other end of C2; the other end of the R4 is connected with the +3.3V power supply end of the STM32 singlechip; the 6 pin of Output B of U3 is connected to one end of C3, one end of R5 and the other end of R6; the 7 pin of Output B of U3 is connected to one end of R7, the other end of C3, the other end of R5 and the negative terminal of the diode; the other end of the R7 is connected with the STM32 singlechip; v with one end of C7 or C8 connected with U3CCOne end and the other end are connected with the ground; vCCAnd the +5V power supply end is connected with the STM32 singlechip.
The power supply module comprises an integrated circuit U4 and capacitors C4-C6; one end of the C4 is connected to the OUT of the U4, and the other end is connected to the GND terminal of the U4, one end of the C5 and the ground; the other end of the C5 is connected with the IN end of the U4 and the +5V power supply end of the STM32 singlechip; c6 has one end connected to the C1-terminal of U4 and the other end connected to the C1+ terminal of U4.
In the above embodiment, U2 is CD4053B, U3 is LM358, and U4 is TPS 60400. C1 is 10000pf, and C1 has one end connected to pin 3 of Inputs a of U3 and the other end connected to GND, forming a filter circuit for filtering out high frequency signals.
In the above embodiment, R4 is 65k and is a pull-up resistor; r5 ═ 55k, and is the feedback resistance; r6 ═ 50 k; c3 ═ 150pf, and is the filter capacitance. The calculation formula of the amplification factor of the amplifying circuit is as follows:
(V1＝3.3V,Viifor input voltage)
Example 1 in carrying out the voltage and current measurements of the cells, the cathodes of the cells were grounded by default. The A, B, C address end of the chip CD4053B is respectively connected to PB2, PB1 and PB0 of the STM32 singlechip, and the Output B of U3 is connected to the PA1 end of the STM32 singlechip through a resistor R7.
Example 1 only voltage and current measurements were made. The voltage value and the macro-current value between the anode and the cathode of the galvanic cell are measured. Their tendency to change in value is closely related to the degree of corrosion of the galvanic cell. By adopting a CD4053B multi-path gating switch as switch control, when a STM32 single chip microcomputer gates circuits where sampling resistors R1(10 Komega) and R2(10 Momega) are located respectively, the circuits can measure the voltage and the internal resistance of a primary battery. The sum of the voltage of the sampling resistor and the internal resistance of the primary battery is the voltage of the primary battery to be detected. The voltage of the positive phase input end of the operational amplifier LM358 is measured, so that the voltage division of the two sampling resistors is measured. Through the processing of the amplifying and filtering circuit, the acquired signals are input into an STM32 single chip microcomputer, and voltage signals are calculated by using the AD function in the chip. And finally, calculating the voltage internal resistance value of the primary battery by using a resistance voltage division principle. And finally, calculating the current of the primary battery according to ohm's law.
The voltage and current measurements were carried out as follows using example 1:
step 1, setting the output address of a PB port of an STM32 singlechip as 0x07, and gating an ax end, a bx end and a cx end of U2. ax is connected with the cathode 1 of the primary battery, bx is suspended, and cx is connected with a sampling resistor R2(10K omega). The voltage signal passes through pins IN ax, OUT axOR ay, IN cx OR cy, OUT cx, and U3 of U2, and enters a voltage follower consisting of a U3 pre-operational amplifier. The invention utilizes electricityThe characteristics of high input impedance and low output impedance of the voltage follower play roles of buffering and isolating, so that the subsequent operational amplifier circuit can work better. Then, the voltage signal is Output from the Output a terminal of U3, and enters the amplifying filter circuit composed of operational amplifiers U3, R3, R5, R6 and C3 through the pull-up filter circuit composed of R4 and C2. The amplifying and filtering circuit can amplify the voltage signal, highlight the voltage signal of useful frequency, attenuate the noise signal of useless frequency, and suppress interference and noise, so as to improve the signal-to-noise ratio. And finally, the voltage signal enters the AD end of the STM32 singlechip from the Output B end of U3 through a current-limiting resistor R7. Wherein, R7 is indispensable as current limiting resistor, plays the role of preventing burning STM32 chip when the circuit fault, measures the voltage U when the input connects GND at this momentGNDAs a calibration voltage for subsequent measurements.
And 2, setting the output address of the PB port of the STM32 singlechip to be 0x03, and gating the ay end, the bx end and the cx end of the U2. ay is connected with the anode 1 of the primary battery, bx is suspended, and cx is connected with a sampling resistor R2(10K omega). The voltage signal passes through pins IN ay, OUT axOR ay, IN cx OR cy, OUT cx, U2, and 3 pins of input A of U3, and enters a voltage follower consisting of a pre-operational amplifier of U3. The voltage signal passes through the above-mentioned amplification filter circuit, and then passes through the current-limiting resistor R7 and enters the AD end of STM32 single-chip microcomputer, so that the anode end voltage U of primary cell can be measuredR2。
And step 3, setting the output address of the PB port of the STM32 singlechip to be 0x02, and gating the ay end, the bx end and the cy end of the U2. ay is connected with the anode 1 of the primary battery, bx is suspended, and cy is connected with a sampling resistor R1(10M omega). The voltage signal passes through pins IN ay, OUT axOR ay, IN cx OR cy, OUT cx, U2, and 3 pins of input A of U3, and enters a voltage follower consisting of a pre-operational amplifier of U3. The signal passes through the above-mentioned amplification filter circuit, and then through the current-limiting resistor R7 and into AD end of STM32 single-chip microcomputer, and the measured positive electrode voltage U of primary cellR1。
Step 4, obtaining voltage and current values; the principle formula of resistance voltage division is utilized:
obtaining the voltage:
internal resistance:
using ohm's law I ═ U/R to obtain:
wherein: delta U1＝UR1-UGND，ΔU2＝UR2-UGND。
Example 2
With reference to fig. 1, 3, 4 and 5, a galvanic cell corrosion detection apparatus includes a main control module and a detection portion (circuit). The detection part is provided with a control gating module, an amplification filter circuit module, a power supply module and a standard voltage module.
The main control module is an STM32 single chip microcomputer.
The control gating module comprises resistors R1-R2, capacitors C7-C8 and an integrated circuit U2; by of U2 is connected to the anode 2 of the galvanic cell; the bx end of U2 is suspended; r1 is linked to cy of U2, and the other end is linked to one end of R2, INH and V of U2EEThe cathode of the primary battery is connected with the ground; the other end of R2 is U2 cx; selecting cy or cx of U2 by an STM32 singlechip to link 3 pins of input A of U3 respectively; cx OR cy of U2 connected to ax OR ay of U2; v of U2SSOUT connected to U4; A. b, C, VDDThe end is connected with the STM32 singlechip; v with one end of C7 or C8 connected with U2DDOne end and the other end are connected with the ground; the ax end of U2 is connected to the cathode of the primary cell; the ay terminal of U2 is connected to the anode 1 of the cell.
The amplifying and filtering circuit module comprises resistors R3-R7, an integrated circuit U3, capacitors C1-C3, C9-C10 and a diode D1; one end of the C1 is connected to the 3 pin of the Inputs A of the U3, and the other end is connected to one end of the C2, one end of the R6, the anode of the diode and the ground; the Output A and input A2 pins of U3 are connected to one end of R3, and the other end of R3 is connected to the input B pin 5 of U3, one end of R4 and the other end of C2; the other end of the R4 is connected with the +3.3V power supply end of the STM32 singlechip; the 6 pin of Output B of U3 is connected to one end of C3, one end of R5 and the other end of R6; the 7 pin of Output B of U3 is connected to one end of R7, the other end of C3, the other end of R5 and the negative terminal of the diode; the other end of the R7 is connected with the STM32 singlechip; v with one end of C7 or C8 connected with U3CCOne end and the other end are connected with the ground; vCCAnd the +5V power supply end is connected with the STM32 singlechip.
The power supply module comprises an integrated circuit U4 and capacitors C4-C6; one end of the C4 is connected to the OUT of the U4, and the other end is connected to the GND terminal of the U4, one end of the C5 and the ground; the other end of the C5 is connected with the IN end of the U4 and the +5V power supply end of the STM32 singlechip; c6 has one end connected to the C1-terminal of U4 and the other end connected to the C1+ terminal of U4.
In the above embodiment, U2 is CD4053B, U3 is LM358, and U4 is TPS 60400. C1 is 10000pf, and C1 has one end connected to pin 3 of Inputs a of U3 and the other end connected to GND, forming a filter circuit for filtering out high frequency signals.
In the above embodiment, R4 is 65k and is a pull-up resistor; r5 ═ 55k, and is the feedback resistance; r6 ═ 50 k; c3 ═ 150pf, and is the filter capacitance. The calculation formula of the amplification factor of the amplifying circuit is as follows:
(V1＝3.3V,Viifor input voltage)
The standard voltage module comprises resistors R8-R13, capacitors C11-C12 and an integrated circuit U5; one end of R8 and bx OR by of U2 are connected to the Output A end of U5, and the other end of R8 is connected to one end of R9 and 2 pin of Input A end of U5; the other end of R9 is grounded with one end of R11; one end of R10 is connected with the 3 pins of the input A end of U5, and the other end is connected with the V of U5EEthe/GND terminal and the OUT terminal of U4; one end of the R13 is connected with the 3 pin of the input A end of the U5, and the other end is connected with the output B end of the U5 and the 6 pin of the input B end; the other end of the R11 is connected with a pin 5 at the B end of the Inputs and one end of the R12; the other end of R12 is connected with STM32 singlechip; one end of C11 is connected with V of U5CCOne end and the other end are connected with the ground; v of U5CCThe end is connected with the +5V power supply end of the STM32 singlechip. When resistance measurement is carried out, the Cx end of the U2 is selected by the STM32 single chip microcomputer. The U5 is LM 358; the voltage value Output from Output a of U5 is fixed to 1V.
Example 2 enables measurement of not only voltage and current but also resistance between different anodes. During the measurement of the voltage, current and resistance of the primary cell, the cathode of the primary cell is grounded by default. The A, B, C address end of the chip CD4053B is respectively connected to PB2, PB1 and PB0 of an STM32 singlechip, the Output B of U3 is connected to the PA1 end of the STM32 singlechip through a resistor R7, and the 5 pin of the input B end of U5 is connected to the PB7 end of the STM32 singlechip through a voltage dividing resistor R12.
And measuring voltage and current. The voltage value and the macro-current value between the anode and the cathode of the galvanic cell are measured. Their tendency to change in value is closely related to the degree of corrosion of the galvanic cell. By adopting a CD4053B multi-path gating switch as switch control, when a STM32 single chip microcomputer gates circuits where sampling resistors R1(10 Komega) and R2(10 Momega) are located respectively, the circuits can measure the voltage and the internal resistance of a primary battery. The sum of the voltage of the sampling resistor and the internal resistance of the primary battery is the voltage of the primary battery to be detected. The voltage of the positive phase input end of the operational amplifier LM358 is measured, so that the voltage division of the two sampling resistors is measured. Through the processing of the amplifying and filtering circuit, the acquired signals are input into an STM32 single chip microcomputer, and voltage signals are calculated by using the AD function in the chip. And finally, calculating the voltage internal resistance value of the primary battery by using a resistance voltage division principle. And finally, calculating the current of the primary battery according to ohm's law.
The voltage and current measurements were carried out as follows using example 2:
and step 11, setting the output address of a PB port of the STM32 singlechip to be 0x07, and gating an ax end, a bx end and a cx end of U2. ax is connected with the cathode 1 of the primary battery, bx is suspended, and cx is connected with a sampling resistor R2(10K omega). The voltage signal passes through pins IN ax, OUT axOR ay, IN cx OR cy, OUT cx, and U3 of U2, and enters a voltage follower consisting of a U3 pre-operational amplifier. The invention utilizes the characteristics of high input impedance and low output impedance of the voltage follower to play roles of buffering and isolating, so that the subsequent operational amplifier circuit can work better. Then, the voltage signal is Output from the Output a terminal of U3, and enters the amplifying filter circuit composed of operational amplifiers U3, R3, R5, R6 and C3 through the pull-up filter circuit composed of R4 and C2. The amplifying and filtering circuit can amplify the voltage signal, highlight the voltage signal of useful frequency, attenuate the noise signal of useless frequency, and suppress interference and noise, so as to improve the signal-to-noise ratio. And finally, the voltage signal enters the AD end of the STM32 singlechip from the Output B end of U3 through a current-limiting resistor R7. Wherein, R7 is indispensable as current limiting resistor, plays the role of preventing burning STM32 chip when the circuit fault, measures the voltage U when the input connects GND at this momentGNDAs a calibration voltage for subsequent measurements.
And step 12, setting the output address of the PB port of the STM32 singlechip to be 0x03, and gating the ay end, the bx end and the cx end of the U2. ay is connected with the anode 1 of the primary battery, bx is suspended, and cx is connected with a sampling resistor R2(10K omega). The voltage signal passes through pins IN ay, OUT axOR ay, IN cx OR cy, OUT cx, U2, and 3 pins of input A of U3, and enters a voltage follower consisting of a pre-operational amplifier of U3. Voltage signal goes throughThe amplifying filter circuit described above enters the AD end of STM32 singlechip via current-limiting resistor R7 to measure the anode end voltage U of primary cellR2。
And step 13, setting the output address of the PB port of the STM32 singlechip to be 0x02, and gating the ay end, the bx end and the cy end of the U2. ay is connected with the anode 1 of the primary battery, bx is suspended, and cy is connected with a sampling resistor R1(10M omega). The voltage signal passes through pins IN ay, OUT axOR ay, IN cx OR cy, OUT cx, U2, and 3 pins of input A of U3, and enters a voltage follower consisting of a pre-operational amplifier of U3. The signal passes through the above-mentioned amplification filter circuit, and then through the current-limiting resistor R7 and into AD end of STM32 single-chip microcomputer, and the measured positive electrode voltage U of primary cellR1。
Step 14, acquiring a voltage value U and a current value I; the principle formula of resistance voltage division is utilized:
obtaining the voltage:
internal resistance:
using ohm's law I ═ U/R to obtain:
wherein: delta U1＝UR1-UGND，ΔU2＝UR2-UGND。
For the measurement of the electrical resistance between different anodes. The resistance of the medium between the two anodes is measured. The value of the corrosion inhibitor has close relation with the moisture content between media, and is a data analysis basis for judging whether the primary battery is corroded. The resistance is measured primarily by studying the voltage and current across it. One anode end of the primary battery is connected to the input end of the voltage and current acquisition circuit, and a standard voltage signal (1V) is applied to the other anode end, so that the voltage of a medium between the two anodes and the passing current are measured. The resistance of the medium between the two anodes was calculated by ohm's law.
The method for measuring the resistance between different anodes using example 2 is as follows:
and step 21, setting the output address of a PB port of the STM32 singlechip to be 0x07, and gating an ax end, a bx end and a cx end of U2. ax is connected with the cathode 1 of the primary battery, bx is suspended, and cx is connected with a sampling resistor R2(10K omega). The voltage signal passes through pins IN ax, OUT axOR ay, IN cx OR cy, OUT cx, and U3 of U2, and enters a voltage follower consisting of a U3 pre-operational amplifier. The invention utilizes the characteristics of high input impedance and low output impedance of the voltage follower to play roles of buffering and isolating, so that the subsequent operational amplifier circuit can work better. Then, the voltage signal is Output from the Output a terminal of U3, and enters the amplifying filter circuit composed of operational amplifiers U3, R3, R5, R6 and C3 through the pull-up filter circuit composed of R4 and C2. The amplifying and filtering circuit can amplify the voltage signal, highlight the voltage signal of useful frequency, attenuate the noise signal of useless frequency, and suppress interference and noise, so as to improve the signal-to-noise ratio. And finally, the voltage signal enters the AD end of the STM32 singlechip from the Output B end of U3 through a current-limiting resistor R7. Wherein, R7 is indispensable as current limiting resistor, plays the role of preventing burning STM32 chip when the circuit fault, measures the voltage U when the input connects GND at this momentGNDAs a calibration voltage for subsequent measurements.
Step 22, setting the output address of PB port of STM32 singlechip as 0x11,the ay terminal, the by terminal and the cy terminal of the U2 are gated; ay is connected with the anode 1 of the primary battery, by is connected with the anode 2 of the primary battery, and cy is connected with the sampling resistor R1(10M omega). The output terminal OutputA of U5 is connected to bx OR by of U2. Standard voltage signal V Output from Output a terminal of U5standardConnected to the primary cell anode 2 via Output a of U5, bxOR by, by of U2. The voltage signal passes through the medium R between the two anodesmediumThe voltage signal after voltage division enters a voltage follower consisting of a front-stage operational amplifier of U3 from the anode 1 through pins ay, ax OR ay, cx OR cy, cy of U2 and input A of U3, then enters an AD end of an STM32 singlechip through an amplifying and filtering circuit and a current-limiting resistor R7, and measures the voltage V at the anode 1 end of the primary battery.
Step 23, obtaining the resistance value Rmedium(ii) a By using a resistance voltage division principle:
obtaining the resistance between the two anodes:
and finally, comprehensively analyzing whether the primary battery is corroded or not through the measured values of the voltage, the current and the resistance of the primary battery.
The technical contents not mentioned in the above modes can be realized by adopting or referring to the prior art.
It is noted that those skilled in the art, having the benefit of the teachings of this specification, may effect these and other changes in a manner similar to the equivalents thereof or obvious variations thereof. All such variations are intended to be within the scope of the present invention.
Claims (4)
1. A kind of galvanic cell corrodes the checkout gear, including top management module, control the module of gating, amplifies the module of filter circuit, power module and standard voltage module; the method is characterized in that:
the main control module is an STM32 singlechip;
the control gating module comprises resistors R1-R2, capacitors C7-C8 and an integrated circuit U2; by of U2 is connected to the anode 2 of the galvanic cell; the bx end of U2 is suspended; r1 is linked to cy of U2, and the other end is linked to one end of R2, INH and V of U2EEThe cathode of the primary battery is connected with the ground; the other end of R2 is Cx of U2; from STThe M32 singlechip selects cy or cx of U2 to link with 3 pins of input A of U3 respectively; cx OR cy of U2 connected to ax OR ay of U2; v of U2SSOUT connected to U4; a, B, C, V of U2DDThe end is connected with the STM32 singlechip; v with one end of C7 or C8 connected with U2DDOne end and the other end are connected with the ground; the ax end of U2 is connected to the cathode of the primary cell, and the ay end of U2 is connected to the anode 1 of the primary cell;
the amplifying and filtering circuit module comprises resistors R3-R7, an integrated circuit U3, capacitors C1-C3, C9-C10 and a diode D1; one end of the C1 is connected to the 3 pin of the Inputs A of the U3, and the other end is connected to one end of the C2, one end of the R6, the anode of the diode and the ground; the Output A and input A2 pins of U3 are connected to one end of R3, and the other end of R3 is connected to the input B pin 5 of U3, one end of R4 and the other end of C2; the other end of the R4 is connected with the +3.3V power supply end of the STM32 singlechip; the 6 pin of the OutputB of U3 is connected to one end of C3, one end of R5 and the other end of R6; the 7 pin of Output B of U3 is connected to one end of R7, the other end of C3, the other end of R5 and the negative terminal of the diode; the other end of the R7 is connected with the STM32 singlechip; v with one end of C9 or C10 connected with U3CCOne end and the other end are connected with the ground; vCCThe +5V power supply end is connected with the STM32 singlechip;
the power supply module comprises an integrated circuit U4 and capacitors C4-C6; one end of the C4 is connected to the OUT of the U4, and the other end is connected to the GND terminal of the U4, one end of the C5 and the ground; the other end of the C5 is connected with the IN end of the U4 and the +5V power supply end of the STM32 singlechip; one end of the C6 is connected to the C1-end of U4, and the other end is connected to the C1+ end of U4;
the standard voltage module comprises resistors R8-R13, capacitors C11-C12 and an integrated circuit U5; one end of R8 and bxOR by of U2 are connected to the Output A end of U5, and the other end of R8 is connected to one end of R9 and 2 pin of Input A end of U5; the other end of R9 is grounded with one end of R11; one end of R10 is connected with the 3 pins of the input A end of U5, and the other end is connected with the V of U5EEthe/GND terminal and the OUT terminal of U4; one end of the R13 is connected with the 3 pin of the input A end of the U5, and the other end of the R13 is connected with the Output B end of the U5 and the 6 pin of the input B end; the other end of the R11 is connected with a pin 5 at the B end of the Inputs and one end of the R12; the other end of the R12 is connected with an STM32 singlechip; one end of C11 is connected with V of U5CCOne end and the other end are grounded; v of U5CCThe end is connected with the +5V power supply end of the STM32 singlechip.
2. The galvanic corrosion detection device of claim 1, wherein: the U2 is CD4053B, the U3 is LM358, and the U4 is TPS 60400.
3. The galvanic corrosion detection device of claim 1, wherein: and one end of the C1 is 10000pf, one end of the C1 is connected to the 3 pins of the Inputs A of the U3, and the other end of the C1 is connected to GND (ground potential), so that a filter circuit is formed and is used for filtering out high-frequency signals.
4. The galvanic corrosion detection device of claim 1, wherein: the R4 is 65k and is a pull-up resistor; r5 ═ 55k, and is the feedback resistance; r6 ═ 50 k; c3 ═ 150pf, filter capacitance; the calculation formula of the amplification factor of the amplifying circuit is as follows:
V1＝3.3V,Viiis the input voltage.
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| CN205643653U (en) * | 2016-05-10 | 2016-10-12 | 青岛理工大学 | Galvanic cell corrosion detection device |
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| GB2203549A (en) * | 1987-04-15 | 1988-10-19 | Julian Marsden Carroll | Metal corrosion detection |
| CN1247987A (en) * | 1999-06-24 | 2000-03-22 | 谭维克 | Capacitance detecting circuit and its application |
| JP2011133448A (en) * | 2009-12-24 | 2011-07-07 | Tokai Technology Center | Method for quantitatively evaluating corrosion amount of reinforcing bar of concrete structure with acoustic emission (ae) |
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| CN202033274U (en) * | 2011-04-25 | 2011-11-09 | 青岛理工大学 | Steel bar corrosion time prediction device |
| CN202101924U (en) * | 2011-04-25 | 2012-01-04 | 青岛理工大学 | Embedded steel bar corrosion monitoring system |
| CN104964921A (en) * | 2015-06-09 | 2015-10-07 | 北京石油化工学院 | Steel bar corrosion degree detection system and detection method thereof |
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