CN108823635A - The preparation method and its microwave smelting furnace of solar energy level silicon - Google Patents

The preparation method and its microwave smelting furnace of solar energy level silicon Download PDF

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Publication number
CN108823635A
CN108823635A CN201810796651.4A CN201810796651A CN108823635A CN 108823635 A CN108823635 A CN 108823635A CN 201810796651 A CN201810796651 A CN 201810796651A CN 108823635 A CN108823635 A CN 108823635A
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silicon
furnace
solar energy
energy level
smelting furnace
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CN108823635B (en
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羊实
庹开正
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Jiangsu Silicon Technology Co Ltd
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Jiangsu Silicon Technology Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/037Purification
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00Production of homogeneous polycrystalline material with defined structure
    • C30B28/04Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient

Abstract

The invention discloses the preparation method of solar energy level silicon and its microwave smelting furnace, solve the problems, such as that the refining effect of high, higher for the metal impurities metallic silicon raw material of the physics smelting energy consumption of existing solar energy level silicon is limited.The present invention includes the following steps:It chooses metallic silicon, crush, slag former is added and is packed into silica crucible, it is placed in the microwave smelting furnace that can be rotated horizontally and carries out vacuum melting, microwave smelting furnace is rotated in heat preservation fusion process, last sequence closing magnetron control metallic silicon gradually solidifies, finally the end by gained silicon ingot far from microwave smelting furnace center and with crucible glue glutinous part removal, cleaning, it is dry, be packaged to be solar energy level silicon.The invention also discloses a kind of microwave smelting furnaces for being used to prepare above-mentioned solar energy level silicon.The present invention has the purity is high of the solar energy level silicon of preparation, low power consumption and other advantages.

Description

The preparation method and its microwave smelting furnace of solar energy level silicon
Technical field
The present invention relates to a kind of preparation methods of solar energy level silicon, and in particular to the preparation method of solar energy level silicon and its micro- Wave smelting furnace.
Background technique
With global energy crisis, environmental degradation and in recent years the United Nations to various countries' greenhouse gas emissions Limitation, Renewable Energy Development technology have become a fundamental policies for realizing Global Sustainable Development.Solar-photovoltaic technology It is one of the chief component in renewable energy technologies, global photovoltaic industry is developed rapidly in recent years.
Overwhelming majority solar battery is crystal silicon solar energy battery at present.It is used to prepare the monocrystalline silicon piece of solar battery It is with sun level polysilicon (silicone content is higher than 99.9999% or 6N grades) or the high purity polycrystalline silicon of higher purity with polysilicon chip Raw material, these polysilicons for being used for the higher degree of solar battery are also usually commonly referred to as polysilicon (Polysilicon).
Since photovoltaic industry is to the great demand of polysilicon, the price of global polysilicon can not have always been high any more, and the source of goods It supplies also more nervous.The lower solar energy level silicon of purity (purity is 98%~99.5% or so) is the raw material for preparing polysilicon
Polysilicon can be obtained after the purification of appropriate technique in solar energy level silicon.The main useization of polycrystalline silicon used for solar battery Learn purification and two methods of physical purification is produced, wherein chemical purification methods mainly have Siemens Method, silane decomposition, Fluidized bed process etc., physical purification method mainly have zone-melting process, pulling of crystals method, directional solidification ingot casting method etc..Wherein, technique more at Ripe is Siemens Method.But Siemens Method or improved Siemens always exist the disadvantages of technology is complicated, investment is big, energy consumption is high, And the case where key technology still rests in enterprise's hand of a small number of developed countries, and there are technology blockages, corner on the market.
As the main material for preparing solar battery, the quality and cost problem of high-purity silicon materials annoying always China The development of photovoltaic industry, so, lot of domestic and foreign enterprises is conducted in-depth research and is visited in the production technology field of polysilicon Rope.Especially in recent years, become this to the research for preparing solar-grade polysilicon using Physical Metallurgy method and using work The hot spot in field, this physical method of smelting are considered as a kind of method that effect is good, and impurity is mainly utilized in metal in it Solubility in the liquid and solid-state of silicon is different, i.e., so-called segregation coefficient is different, by directional freeze method by impurity collection In in end, finally cut off end to reach deimpurity purpose, but in the method, the segregation coefficient of B is big, bad Removal, and when the comparision contents of metal impurities are high, the problem of there are still bad removals, and energy consumption is higher, therefore, it is necessary to right This method and its equipment used improve.
Summary of the invention
The technical problem to be solved by the present invention is to:The physics smelting energy consumption of existing solar energy level silicon is high, for gold The refining effect for belonging to the higher metallic silicon raw material of impurity is limited.
The present invention is achieved through the following technical solutions:
The preparation method of solar energy level silicon, includes the following steps:
Step 1:It chooses metallic silicon, crush, and be uniformly blended into slag former and form mixture;
Step 2:Silica crucible is filled this blend into, is placed in the microwave smelting furnace that can be rotated horizontally;
Step 3:Microwave heating is carried out to the raw material in silica crucible, is vacuumized while heating process with vacuum pump;
Step 4:When temperature rises to heat preservation smelting temperature, vacuum pump is closed, vacuum pump is closed and microwave smelting furnace connects The valve one on snorkel one connect, and the snorkel of vacuum pump is pulled up, and open injection protective atmosphere, it is closed after the completion of injection Valve two on the snorkel two of protective gas, pulls up the snorkel two of protective gas, and opens rotating device;
Step 5:Metallic silicon carries out heat preservation melting in microwave smelting furnace under rotation status;
Step 6:It is segmented the power supply for disconnecting magnetron from the center of microwave smelting furnace to both ends, makes the silicon in silica crucible Liquid gradually cooling solidification and ingot casting;
Step 7:End by gained silicon ingot far from microwave smelting furnace center and glutinous part removal, clear is glued with crucible It washes, dry, pack.
Design principle of the invention is:Metallic silicon is crushed before melting to obtain the lesser metallic silicon of partial size, and Slag former, which is added, can make metallic silicon and slag former be sufficiently mixed uniformly, be convenient for later period slag making, by high pure metal silicon and slag making The mixture of agent is packed into silica crucible and is placed in the progress vacuum melting of microwave smelting furnace, and microwave smelting furnace is can be along vertical axis What line rotated horizontally, during horizontal rotation, the impurity being melt into the metallic silicon of liquid in crucible can be in centrifugal force Under the action of moved to edge, and slag former can in conjunction with impurity and float or lower layer, such impurity will be gathered in crucible together At outer edge far from rotary shaft, the impurity that slag former combines can be gathered in bottom or top, when crucible is from microwave smelting furnace Center progressively close off magnetron gradually during cooled and solidified to two sides, impurity can also be due to fractional condensation principle and to liquid Middle diffusion, and the rotation of microwave smelting furnace accelerates the speed that slag former and impurity move out and the place fortune toward more edge Dynamic, i.e., impurity can be gathered in edge portions, can impurity elimination finally by excision.
The present invention replaces electric heating by using microwave, and the conducting by controlling magnetron gradually cools down to realize, with Traditional Bridgman-Stockbarger method has essential difference, and during crucible decline, the heat source in furnace all continues heating, and the application is logical It crosses and progressively closes off magnetron, reduce the number of heat source in temperature-fall period, i.e., just gradually decrease heat source during cooling Energy consumption is saved greatly energy consumption.
The preparation method of currently preferred solar energy level silicon, selected slag former are that Na2O-CaO-BaO-SiO2 is compound Slag former, wherein the purity of each component is 5N or more, molar ratio 1:1:2:2, additive amount is the 6 of metallic silicon raw material quality ~8%, high-purity slag former is added and is conducive to impurity inside enriched in metals silicon, it is final to be removed, and new impurity will not be brought into.
The temperature of the preparation method of currently preferred solar energy level silicon, the heat preservation melting is 1450-1750 DEG C, heat preservation Time be 1-2 hours.
The preparation method of currently preferred solar energy level silicon in the step three, is maintained using rotary-vane vaccum pump Vacuum degree in furnace, carries out fusion process under partial vacuum, and vacuum degree is<500Pa;And after evacuation, argon gas or nitrogen are filled with Gas protects melt.
The preparation method of currently preferred solar energy level silicon, the revolving speed of the rotating device are 2000-10000r/min.
A kind of microwave smelting furnace being used to prepare solar energy level silicon, including furnace body are set in the fixation in the vertical outside of furnace body Mounting cylinder, the fixed installation cylinder are fixedly installed with support frame, and the furnace body overcoat is equipped with first gear circle, the fixation A circle second gear circle is fixed on the inner wall of mounting cylinder, the first gear circle engages connection with second gear circle;
Fire door is arranged in the center at the top of the furnace body, and the center of the bottom of furnace body is fixedly connected with shaft, Level support platform is arranged in support frame as described above, is fixed with motor mount in the level support platform, installs on motor mount There is stepper motor, the output shaft of the stepper motor is fixedly connected with the shaft;
The intracorporal medium position of furnace is arranged groove, partition and matching grooves and can be caught in furnace body inner cavity point in groove It is divided into left and right two parts;
Snorkel one is inserted into the furnace body setting aperture together, and the snorkel one is connect with the vacuum pump;
The furnace body has aperture two, and snorkel two is inserted into aperture two and connect with protective gas storage device, works as melting When process needs that protective gas is added, protective gas can be passed through by the snorkel two and aperture two;
Embedded setting magnetron on the inside of the furnace body surrounding, the magnetron and be located at level support platform lower section be equipped with it is micro- Wave launcher is connected by waveguide;Simultaneously control power supply is respectively set in the magnetron subsection setup.
Design principle of the invention is:When needing smelting metal silicon, metallic silicon is fitted into 2 silica crucibles, respectively Crucible cover is covered, one of crucible is placed in the left side of microwave smelting furnace, another crucible is placed in microwave smelting furnace Right side, close the fire door of microwave smelting furnace, open vacuum pump and vacuumized, and open microwave emitter and magnetron, So that microwave smelting furnace is begun to warm up, when being heated to metallic silicon melting temperature, vacuum pump is closed, valve one is closed, pulls out logical Tracheae one is passed through argon gas or nitrogen protection gas, after the completion of injection, closes valve two, pulls out snorkel two, opens stepper motor It drives furnace body to horizontally rotate, after the completion of heat preservation, closes middle part magnetron, metallic silicon melt liquid is from microwave smelting furnace The position of the crucible of the heart starts to cool down, and is required according to cooling rate, progressively closes off other magnetrons, to control molten silicon gradually Cooling solidification, complete ingot casting, after the completion of solidification, to its be cooled to can hand operation, by crucible take out carry out subsequent operation.
Further, in order to fix two crucibles in left and right, an ancillary crucible is clamped between two crucibles in left and right.
Currently preferred microwave smelting furnace, the furnace body is connect with fixed installation cylinder by bearing, and the bearing Internal diameter be set on furnace body, the outer diameter of bearing is fixedly connected with the inner wall that cylinder is fixedly mounted.
The present invention has the advantage that and beneficial effect:
1, the present invention is that heat source carries out melting to metallic silicon by using microwave, reduces energy consumption;
2, control microwave smelting furnace rotation while the present invention is by passing through microwave heating, so that impurity and slag former are easy to It is enriched with to crucible far from the end at microwave smelting furnace center, then by directional solidification realization accumulation of impurities at edge, finally by Removal of impurities, the good impurity removing effect of the application can be completed in excision.
3, the present invention closes heat source by Discrete control and gradually cools down to control crucible, to realize directional solidification, controllably Good, the energy saving of property.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of microwave smelting furnace of the present invention.
Label and corresponding parts title in attached drawing:
Cylinder, 3- support frame, 30- level support platform, the vertical column of 31-, 4- first gear circle, 5- is fixedly mounted in 1- furnace body, 2- Second gear circle, 6- fire door, 7- motor mount, 8- stepper motor, 9- shaft, 10- aperture one, 11- snorkel one, 12- magnetic Keyholed back plate, 13- microwave emitter, 14- aperture two, 15- snorkel two, 16- bearing, 17- crucible, 18- ancillary crucible, 19- shaft coupling Device, 20- valve one, 21- valve two.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and examples, to this Invention is described in further detail, and exemplary embodiment of the invention and its explanation for explaining only the invention, are not made For limitation of the invention.
Embodiment 1
The preparation method of solar energy level silicon, includes the following steps:
Step 1:The purity of selected metallic silicon, metallic silicon is not less than 99%, and metallic silicon is crushed, and is uniformly blended into 6% slag former forms mixture, and slag former used is Na2O-CaO-BaO-SiO2 composite fluxing medium, and the purity of each component is 5N or more, molar ratio 1:1:2:2;
Step 2:Said mixture is distributed into 2 silica crucibles, cover crucible cover be placed in can rotate horizontally it is micro- Fire door is simultaneously closed in left side and right side in wave smelting furnace;
Step 3:Microwave heating is carried out to the raw material in silica crucible, is vacuumized while heating process with vacuum pump, Vacuum degree is 100Pa;
Step 4:When temperature rises to heat preservation smelting temperature, vacuum pump is closed, vacuum pump is closed and microwave smelting furnace connects The valve one on snorkel one connect, and the snorkel of vacuum pump is pulled up, and open injection protective atmosphere, it is closed after the completion of injection Valve two on the snorkel two of protective gas, pulls up the snorkel two of protective gas, and opens rotating device, and setting revolving speed is 2000r/min;
Step 5:Metallic silicon carries out heat preservation melting in microwave smelting furnace under rotation status, and smelting temperature is 1500 DEG C, Melting soaking time is 2 hours;
Step 6:The power supply for disconnecting magnetron is segmented from the center of microwave smelting furnace to both ends, control cooling velocity is 1.5 DEG C/min, make silicon liquid in silica crucible gradually cooling solidification and ingot casting;
Step 7:End by gained silicon ingot far from microwave smelting furnace center and glutinous part removal, clear is glued with crucible It washes, dry, pack.
It is detected using ICPMS, the purity of solar energy level silicon is 99.9995%.
Embodiment 2
Step 1:The purity of selected metallic silicon, metallic silicon is not less than 99%, and metallic silicon is crushed, and is uniformly blended into 8% slag former forms mixture, and slag former used is Na2O-CaO-BaO-SiO2 composite fluxing medium, and the purity of each component is 5N or more, molar ratio 1:1:2:2;
Step 2:Said mixture is distributed into 2 silica crucibles, cover crucible cover be placed in can rotate horizontally it is micro- Fire door is simultaneously closed in left side and right side in wave smelting furnace;
Step 3:Microwave heating is carried out to the raw material in silica crucible, is vacuumized while heating process with vacuum pump, Vacuum degree is 200Pa;
Step 4:When temperature rises to heat preservation smelting temperature, vacuum pump is closed, vacuum pump is closed and microwave smelting furnace connects The valve one on snorkel one connect, and the snorkel of vacuum pump is pulled up, and open injection protective atmosphere, it is closed after the completion of injection Valve two on the snorkel two of protective gas, pulls up the snorkel two of protective gas, and opens rotating device, and setting revolving speed is 10000r/min;
Step 5:Metallic silicon carries out heat preservation melting in microwave smelting furnace under rotation status, and smelting temperature is 1700 DEG C, Melting soaking time is 1 hour;
Step 6:The power supply for disconnecting magnetron is segmented from the center of microwave smelting furnace to both ends, control cooling velocity is 1 DEG C/min, make silicon liquid in silica crucible gradually cooling solidification and ingot casting;
Step 7:End by gained silicon ingot far from microwave smelting furnace center and glutinous part removal, clear is glued with crucible It washes, dry, pack.
It is detected using ICPMS, the purity of solar energy level silicon is 99.9998%.
Embodiment 3
As shown in Figure 1, a kind of microwave smelting furnace for being used to prepare solar energy level silicon, including vertical cylindrical furnace 1, set It is located at the fixed installation cylinder 2 in the vertical outside of furnace body, the left and right sides of the fixed installation cylinder 2 is fixedly installed with support frame 3, institute Stating support frame 3 includes vertical column 31 and the level support platform 30 with the welding of vertical column 31, is arranged with the first tooth outside the furnace body 1 Wheel rim 4, it is described be fixedly mounted cylinder 2 inner wall on be fixed with a circle second gear circle 5, the first gear circle 4 and second The engagement connection of gear ring 5;
Fire door 6 is arranged in the center at the top of the furnace body 1, and the center of the bottom of furnace body 1, which is fixedly connected with, to be turned Axis 9 is fixed with motor mount 7 in the level support platform 30, stepper motor 8, the step is equipped on motor mount 7 Output shaft into motor 8 is fixedly connected with the shaft 9, and the output shaft and shaft 9 of the stepper motor 8 pass through shaft coupling 19 It is fixedly connected;
The furnace body 1 is arranged aperture 1 and is inserted into snorkel 1, and the snorkel 1 is connect with the vacuum pump, Valve 1 is set on the snorkel 1;
Further, the furnace body 1 has aperture 2 14, and snorkel 2 15 is inserted into aperture 2 14 and stores with protective gas Device connects, and valve 2 21 is arranged on the snorkel 2 15;It, can be by this when fusion process needs that protective gas is added Snorkel 2 15 and aperture 2 14 are passed through protective gas;
Embedded setting magnetron 12 on the inside of 1 surrounding of furnace body, the magnetron 12 be located at 30 lower section of level support platform The microwave emitter being equipped with is connected by waveguide;Simultaneously control power supply is respectively set in 12 subsection setup of magnetron.
When needing smelting metal silicon, metallic silicon is fitted into 2 silica crucibles 17, covers crucible cover respectively, it will wherein One earthenware, 17 are placed in the left side of microwave smelting furnace, another crucible 17 is placed in the right side of microwave smelting furnace, close micro- The fire door 6 of wave smelting furnace is opened vacuum pump and is vacuumized, and opens microwave emitter 13 and magnetron 12, so that microwave is molten Furnace is begun to warm up, and when being heated to metallic silicon melting temperature, is closed vacuum pump, is closed valve 1, pull out snorkel 1, It is passed through argon gas or nitrogen protection gas, after the completion of injection, valve 2 21 is closed, pulls out snorkel 2 14, open 8 band of stepper motor Dynamic furnace body horizontally rotates, and after the completion of heat preservation, middle part magnetron 12 is closed, close to the position of the crucible 17 at microwave smelting furnace center Start to cool down, be required according to cooling rate, progressively close off other magnetrons 12, completes casting to control molten silicon and gradually cool down Ingot, after the completion of solidification, to its be cooled to can hand operation, by crucible 17 take out carry out subsequent operation.
Further, in order to fix two crucibles 17 in left and right, an ancillary crucible is clamped between two crucibles 17 in left and right 18。
Further, the furnace body 1 is connect with fixed installation cylinder 2 by bearing 16, and the internal diameter set of the bearing 16 It is located on furnace body 1, the outer diameter of bearing 16 is fixedly connected with the inner wall that cylinder 2 is fixedly mounted.
Further, the end of the snorkel 1 and the end of snorkel 2 15 are ferrule, the aperture and logical The end of tracheae uses welded seal, and the end of aperture 2 14 and snorkel 2 15 uses welded seal.
The one end of the above snorkel 1 extracted end and be located at the separate microwave smelting furnace of valve 1, snorkel 2 15 The one end extracted end and be located at the separate microwave smelting furnace of valve 2 21,
In the description of the present invention, it is to be understood that, term " center ", "upper", "lower", "front", "rear", " left side ", The orientation or positional relationship of the instructions such as " right side ", "vertical", "horizontal", "top", "bottom", "inner", "outside" is based on the figure Orientation or positional relationship.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include Within protection scope of the present invention.

Claims (7)

1. the preparation method of solar energy level silicon, which is characterized in that include the following steps:
Step 1:It chooses metallic silicon, crush, and be uniformly blended into slag former and form too metallic silicon mixture;
Step 2:Silica crucible is filled this blend into, is placed in the microwave smelting furnace that can be rotated horizontally;
Step 3:Microwave heating is carried out to the raw material in silica crucible, is vacuumized while heating process with vacuum pump;
Step 4:When temperature rises to heat preservation smelting temperature, rotating device is opened;
Step 5:Metallic silicon carries out heat preservation melting in microwave smelting furnace under rotation status;
Step 6:It is segmented the power supply for disconnecting magnetron from the center of microwave smelting furnace to both ends, makes the silicon liquid in silica crucible Gradually cooling solidification and ingot casting;
Step 7:End by gained silicon ingot far from microwave smelting furnace center and glutinous part removal, cleaning, dry is glued with crucible Dry, packaging.
2. the preparation method of solar energy level silicon according to claim 1, which is characterized in that selected slag former is Na2O- CaO-BaO-SiO2 composite fluxing medium, wherein the purity of each component is 5N or more, molar ratio 1:1:2:2, additive amount is The 6~8% of metallic silicon raw material quality.
3. the preparation method of solar energy level silicon according to claim 1 or 2, which is characterized in that the temperature of the heat preservation melting Degree is 1450-1750 DEG C, and the time of heat preservation is 1-2 hours.
4. the preparation method of solar energy level silicon according to claim 1 or 2, which is characterized in that in the step three, adopt Vacuum degree in furnace is maintained with rotary-vane vaccum pump, carries out fusion process under partial vacuum, vacuum degree 90-100Pa;It can also be After vacuumizing, it is filled with argon gas or nitrogen protects melt.
5. the preparation method of solar energy level silicon according to claim 1 or 2, which is characterized in that the rotating device turns Speed is 2000-10000r/min.
6. a kind of microwave smelting furnace for being used to prepare solar energy level silicon as claimed in claim 1 or 2, which is characterized in that including Furnace body (1), is set in the fixed installation cylinder (2) in the vertical outside of furnace body (1), and the fixed installation cylinder (2) is fixedly installed with branch Support (3), the furnace body (1) are arranged with first gear circle (4) outside, are fixed on the inner wall that cylinder (2) are fixedly mounted One circle second gear circle (5), the first gear circle (4) engage connection with second gear circle (5);
Fire door (6) are arranged in the center at the top of the furnace body (1), and the center of the bottom of furnace body (1) is fixedly connected with Level support platform (30) are arranged in shaft (9), support frame as described above (3), and motor installation is fixed on the level support platform (30) Seat (7) is equipped with stepper motor (8) on motor mount (7), and the output shaft of the stepper motor (8) and the shaft (9) are solid Fixed connection;
The furnace body (1) is arranged aperture one (10) and is inserted into snorkel one (11), the snorkel one (11) and the vacuum pump Connection,
Embedded setting magnetron (12) on the inside of furnace body (1) surrounding, the magnetron (12) and is located at level support platform (30) The microwave emitter (13) that lower section is equipped with is connected by waveguide;Simultaneously control electricity is respectively set in magnetron (12) subsection setup Source.
7. microwave smelting furnace according to claim 6, which is characterized in that the furnace body (1) has aperture two (14), ventilation Pipe two (15) insertion aperture two (14) is simultaneously connect with protective gas storage device.
CN201810796651.4A 2018-07-19 2018-07-19 Preparation method of solar grade silicon and microwave smelting furnace thereof Active CN108823635B (en)

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Cited By (4)

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CN109133068A (en) * 2018-11-19 2019-01-04 成都斯力康科技股份有限公司 Metallurgy method removal of impurities prepares the device and method of solar-grade silicon ingot
CN109354024A (en) * 2018-11-19 2019-02-19 成都斯力康科技股份有限公司 A kind of device and method of infant industry silicon separation, impurity removal
CN110835779A (en) * 2019-11-28 2020-02-25 湖南大合新材料有限公司 Secondary purification process for tellurium-zinc-cadmium raw material
CN112359415A (en) * 2020-11-23 2021-02-12 安阳工学院 Manufacturing process of solar P-type polycrystalline silicon wafer

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