CN108767091A - A kind of light emitting device package structure and preparation method thereof - Google Patents

A kind of light emitting device package structure and preparation method thereof Download PDF

Info

Publication number
CN108767091A
CN108767091A CN201810618387.5A CN201810618387A CN108767091A CN 108767091 A CN108767091 A CN 108767091A CN 201810618387 A CN201810618387 A CN 201810618387A CN 108767091 A CN108767091 A CN 108767091A
Authority
CN
China
Prior art keywords
layer
heat
line
groove
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810618387.5A
Other languages
Chinese (zh)
Other versions
CN108767091B (en
Inventor
戴世元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU SHUANGSHUANG HI-TECH Co.,Ltd.
Original Assignee
Nantong Voight Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantong Voight Optoelectronics Technology Co Ltd filed Critical Nantong Voight Optoelectronics Technology Co Ltd
Priority to CN201810618387.5A priority Critical patent/CN108767091B/en
Publication of CN108767091A publication Critical patent/CN108767091A/en
Application granted granted Critical
Publication of CN108767091B publication Critical patent/CN108767091B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/13Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0025Processes relating to coatings
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0075Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

The present invention provides a kind of light emitting device package structures and preparation method thereof, and method includes the following steps:Form packaging back board, multiple positive rectangular pyramid protrusions are bonded in the upper surface of poly methyl methacrylate plastic plate, the first groove of multiple parallel arrangements and embedded buffering heat-conducting block are formed in the lower surface of the packaging back board, circuit-wiring layer is formed on the packaging back board, a LED chip is respectively set on four side surfaces of the positive rectangular pyramid protrusion, the first heat insulation packed glue-line, the first fluorescence encapsulation glue-line, the first layer of silica gel, the second fluorescence encapsulation glue-line and the second layer of silica gel are laid in the upper surface of the packaging back board.The light emitting device package structure of the present invention goes out optical property, heat conductivility and damping performance with excellent.

Description

A kind of light emitting device package structure and preparation method thereof
Technical field
The present invention relates to technical field of semiconductor encapsulation, more particularly to a kind of light emitting device package structure and its preparation side Method.
Background technology
In the preparation process of existing light emitting device package structure, line layer is usually set on planar substrates, is then existed Multiple light-emitting diode chip for backlight unit are installed on line layer, then fluorescence silica gel layer are utilized to encapsulate the light-emitting diode chip for backlight unit.It is common Light-emitting diode chip for backlight unit have gallium arsenide diode red light chips, gallium phosphide diode green light chip, silicon carbide diode yellow light Chip and gallium nitride diode blue chip etc..Existing light emitting device package structure chips density is small and heat dissipation performance compared with Therefore how difference designs a kind of high performance light emitting device package structure, is industry urgent problem to be solved.
Invention content
The purpose of the present invention is overcoming above-mentioned the deficiencies in the prior art, a kind of light emitting device package structure and its preparation are provided Method.
To achieve the above object, the preparation method of a kind of light emitting device package structure proposed by the present invention, including following step Suddenly:
1) metallic reflector is deposited in the lower surface of poly methyl methacrylate plastic plate, in the following table of the metallic reflector Face bonds elastic rubber layer, then outer weathering layer is bonded in the lower surface of the elastic rubber layer, to form packaging back board;
2)Multiple positive rectangular pyramid protrusions are bonded in the upper surface of poly methyl methacrylate plastic plate, multiple positive rectangular pyramids are convex It rises and arranges in matrix, the side surface of the positive rectangular pyramid protrusion and the angle of the bottom surface of the positive rectangular pyramid protrusion are 30 degree -60 Degree;
3)The first groove of multiple parallel arrangements, the depth of first groove and institute are formed in the lower surface of the packaging back board The ratio for stating the thickness of packaging back board is 0.6-0.8, and embedded buffering heat-conducting block, the buffering are led in each first groove A part for heat block protrudes from the lower surface of the packaging back board, the top of the top surface and the first groove of the buffering heat-conducting block Surface contacts;
4)A conductive metal layer is deposited on the packaging back board, and patterned process is carried out to be formed to the conductive metal layer Circuit-wiring layer is respectively arranged a LED chip on four side surfaces of the positive rectangular pyramid protrusion, and passes through the wiring Multiple LED chips are electrically connected by layer;
5)It is laid with the first heat insulation packed glue-line in the upper surface of the packaging back board, the first heat insulation packed glue-line is by adjacent institute The gap stated between positive rectangular pyramid protrusion is filled up, and the upper surface of the first heat insulation packed glue-line is flat surface;
6)The first fluorescence encapsulation glue-line is laid on the first heat insulation packed glue-line;
7)The first layer of silica gel is set on first fluorescence encapsulation glue-line upper berth;
8)The second fluorescence encapsulation glue-line is laid in first layer of silica gel;
9)The second layer of silica gel is set on second fluorescence encapsulation glue-line upper berth;
Wherein, the manufacture craft of the buffering heat-conducting block is:One second groove is opened up in the bottom surface of the first metal derby, described second The ratio of the depth of groove and the height of first metal derby is 0.3-0.6, the width of second groove and described first The width ratio of the bottom surface of metal derby is 0.3-0.6, and the length of the second groove is described with first metal derby The lenth ratio of bottom surface is 0.3-0.6;Then the first caoutchouc layer is bonded in the leading flank of the first metal derby, described first The trailing flank of metal derby bonds the second caoutchouc layer;Then the first heat conductive silica gel is bonded on first caoutchouc layer Layer bonds the second heat conduction silicone on second caoutchouc layer;Then is laid in first heat conduction silicone One epoxy resin adhesive layer is laid with the second epoxy resin adhesive layer in second heat conduction silicone, to form the buffering Heat-conducting block.
Preferably, the poly methyl methacrylate plastic plate includes polymethyl methacrylate and relative to described 100 parts by weight of polymethyl methacrylate are the heat conduction powder of 10-20 parts by weight, and the positive rectangular pyramid protrusion includes poly- methyl-prop E pioic acid methyl ester and relative to 100 parts by weight of the polymethyl methacrylate be 10-20 parts by weight heat conduction powder or packet Include PET and relative to the heat conduction powder that PET100 parts by weight are 10-20 parts by weight.
Preferably, the material of the heat conduction powder is aluminium oxide, zinc oxide, boron nitride, aluminium nitride, magnesia, carbonization It is one or more in silicon and graphene.
Preferably, the material of the metallic reflector is one kind in aluminium, copper, silver, the thickness of the metallic reflector It it is 100-200 nanometers, the thickness of the elastic rubber layer is 1-3 millimeters, and the outer weathering layer is fluoropolymer resin layer, described outer resistance to The thickness for waiting layer is 300-600 microns.
Preferably, the width of first groove is 10-20 millimeters, the spacing between adjacent first groove is 5- 10 millimeters, the width of first groove with it is described buffering heat-conducting block it is of same size, the length of first groove with it is described The length for buffering heat-conducting block is identical, and the height for the part that the buffering heat-conducting block protrudes from the photovoltaic back is 2-5 millis Rice.
Preferably, the material of first metal derby is one kind in aluminium, copper, stainless steel, first metal derby The width of bottom surface is 7-14 millimeters, and the thickness of first caoutchouc layer and second caoutchouc layer is 1-2 millimeters, The thickness of first heat conduction silicone and second heat conduction silicone is that 400-800 is micron, and the first EVA is bonded The thickness of layer and the 2nd EVA adhesive layers is that 100-200 is micron.
Preferably, the first heat insulation packed glue-line includes silica gel and is 20- relative to 100 parts by weight of the silica gel The silicate powder of 30 parts by weight, first fluorescence encapsulation glue-line include epoxy resin and relative to the epoxy resin 100 parts by weight are the fluorescent powder of 3-8 parts by weight, and second fluorescence encapsulation glue-line includes silica gel and relative to the silica gel 100 parts by weight are the fluorescent powder of 10-20 parts by weight.
The invention also provides a kind of light emitting device package structure, the light emitting device package structure uses above method system Standby formation.
The present invention has following advantages compared with prior art:
In the light emitting device package structure of the present invention, multiple positive tetragonous are bonded in the upper surface of poly methyl methacrylate plastic plate Cone protrusion, and it is both provided with LED chip in four side surfaces of positive rectangular pyramid protrusion, with existing light emitting device package structure phase Than light emitting device package structure of the invention can load more LED chips, while the side by optimizing positive rectangular pyramid protrusion The angle on surface and bottom surface so that it is anti-that light extraction evenly, in the lower surface of poly methyl methacrylate plastic plate deposits a metal Layer is penetrated, to improve light direction.The first groove of multiple parallel arrangements is formed in the lower surface of packaging back board and insertion is slow simultaneously Heat-conducting block is rushed, the heat dissipation performance of light emitting device package structure is effectively increased, the part for buffering heat-conducting block protrudes from the light The lower surface of backboard is lied prostrate, and then can be played a supporting role, the bottom surface of the first metal derby opens up a second groove, and optimizes second The specific size of groove further improves its heat dissipation performance, and caoutchouc layer and thermal conductive silicon is arranged on the first metal derby surface Glue-line so that light emitting device package structure of the invention has excellent damping performance.First heat insulation packed glue-line is by adjacent institute The gap stated between positive rectangular pyramid protrusion is filled up, and the upper surface of the first heat insulation packed glue-line is flat surface, then first The first fluorescence encapsulation glue-line is formed on heat insulation packed glue-line, the setting of the first heat insulation packed glue-line can send out to avoid LED chip Heat conduct to the first fluorescence and encapsulate glue-line, and then the fluorescence property that glue-line can be encapsulated to avoid the first fluorescence declines, logical The different two fluorescence encapsulation glue-line of setting fluorescence powder content is crossed, and two fluorescence are encapsulated into glue-line using layer of silica gel, is effectively changed It has been apt to light emitting device package structure and has gone out optical property and sealing performance.The preparation method of the light emitting device package structure of the present invention is simple It is easy, it is easy to industrialized production.
Description of the drawings
Fig. 1 is the structural schematic diagram of the light emitting device package structure of the present invention.
Fig. 2 is the vertical view of the light emitting device package structure of the present invention.
Fig. 3 is the upward view of the light emitting device package structure of the present invention.
Fig. 4 is the schematic cross-section of the buffering heat-conducting block of the present invention.
Fig. 5 is the upward view of the buffering heat-conducting block of the present invention.
Specific implementation mode
A kind of preparation method for light emitting device package structure that the specific embodiment of the invention proposes, includes the following steps:
1) metallic reflector is deposited in the lower surface of poly methyl methacrylate plastic plate, in the following table of the metallic reflector Face bonds elastic rubber layer, then outer weathering layer is bonded in the lower surface of the elastic rubber layer, to form packaging back board;
2)Multiple positive rectangular pyramid protrusions are bonded in the upper surface of poly methyl methacrylate plastic plate, multiple positive rectangular pyramids are convex It rises and arranges in matrix, the side surface of the positive rectangular pyramid protrusion and the angle of the bottom surface of the positive rectangular pyramid protrusion are 30 degree -60 Degree;
3)The first groove of multiple parallel arrangements, the depth of first groove and institute are formed in the lower surface of the packaging back board The ratio for stating the thickness of packaging back board is 0.6-0.8, and embedded buffering heat-conducting block, the buffering are led in each first groove A part for heat block protrudes from the lower surface of the packaging back board, the top of the top surface and the first groove of the buffering heat-conducting block Surface contacts;
4)A conductive metal layer is deposited on the packaging back board, and patterned process is carried out to be formed to the conductive metal layer Circuit-wiring layer is respectively arranged a LED chip on four side surfaces of the positive rectangular pyramid protrusion, and passes through the wiring Multiple LED chips are electrically connected by layer;
5)It is laid with the first heat insulation packed glue-line in the upper surface of the packaging back board, the first heat insulation packed glue-line is by adjacent institute The gap stated between positive rectangular pyramid protrusion is filled up, and the upper surface of the first heat insulation packed glue-line is flat surface;
6)The first fluorescence encapsulation glue-line is laid on the first heat insulation packed glue-line;
7)The first layer of silica gel is set on first fluorescence encapsulation glue-line upper berth;
8)The second fluorescence encapsulation glue-line is laid in first layer of silica gel;
9)The second layer of silica gel is set on second fluorescence encapsulation glue-line upper berth;
Wherein, the manufacture craft of the buffering heat-conducting block is:One second groove is opened up in the bottom surface of the first metal derby, described second The ratio of the depth of groove and the height of first metal derby is 0.3-0.6, the width of second groove and described first The width ratio of the bottom surface of metal derby is 0.3-0.6, and the length of the second groove is described with first metal derby The lenth ratio of bottom surface is 0.3-0.6;Then the first caoutchouc layer is bonded in the leading flank of the first metal derby, described first The trailing flank of metal derby bonds the second caoutchouc layer;Then the first heat conductive silica gel is bonded on first caoutchouc layer Layer bonds the second heat conduction silicone on second caoutchouc layer;Then is laid in first heat conduction silicone One epoxy resin adhesive layer is laid with the second epoxy resin adhesive layer in second heat conduction silicone, to form the buffering Heat-conducting block.
Further, the poly methyl methacrylate plastic plate includes polymethyl methacrylate and gathers relative to described 100 parts by weight of methyl methacrylate are the heat conduction powder of 10-20 parts by weight, and the positive rectangular pyramid protrusion includes polymethyl Sour methyl esters and relative to 100 parts by weight of the polymethyl methacrylate be 10-20 parts by weight heat conduction powder or including PET and relative to PET100 parts by weight be 10-20 parts by weight heat conduction powder.
Further, the material of the heat conduction powder is aluminium oxide, zinc oxide, boron nitride, aluminium nitride, magnesia, silicon carbide And it is one or more in graphene.
Further, the material of the metallic reflector is one kind in aluminium, copper, silver, and the thickness of the metallic reflector is 100-200 nanometers, the thickness of the elastic rubber layer is 1-3 millimeters, and the outer weathering layer is fluoropolymer resin layer, described outer weather-proof The thickness of layer is 300-600 microns.
Further, the width of first groove is 10-20 millimeters, and the spacing between adjacent first groove is 5-10 Millimeter, the width of first groove is of same size with the buffering heat-conducting block, and the length of first groove is delayed with described The length for rushing heat-conducting block is identical, and the height for the part that the buffering heat-conducting block protrudes from the photovoltaic back is 2-5 millimeters.
Further, the material of first metal derby is one kind in aluminium, copper, stainless steel, the bottom of first metal derby The width in face is 7-14 millimeters, and the thickness of first caoutchouc layer and second caoutchouc layer is 1-2 millimeters, institute The thickness for stating the first heat conduction silicone and second heat conduction silicone is that 400-800 is micron, the first EVA adhesive layers Thickness with the 2nd EVA adhesive layers is that 100-200 is micron.
Further, the first heat insulation packed glue-line includes silica gel and is 20-30 relative to 100 parts by weight of the silica gel The silicate powder of parts by weight, the silicate can be alumina silicate or magnesium silicate, and the first fluorescence encapsulation glue-line includes ring Oxygen resin and relative to the fluorescent powder that 100 parts by weight of the epoxy resin are 3-8 parts by weight, second fluorescence encapsulates glue-line Including silica gel and relative to the fluorescent powder that 100 parts by weight of the silica gel are 10-20 parts by weight.
As shown in Figs. 1-5, the light emitting device package structure includes packaging back board, and the packaging back board includes outer weathering layer 1, elastic rubber layer 2, metallic reflector 3 and poly methyl methacrylate plastic plate 4, in poly methyl methacrylate plastic plate 4 upper surface bonds multiple positive rectangular pyramid protrusions 5, and multiple positive rectangular pyramid protrusions 5 are arranged in matrix, and the positive rectangular pyramid is convex The angle for playing 5 side surface and the bottom surface of the positive rectangular pyramid protrusion 5 is 30 degree of -60 degree;In the lower surface of the packaging back board The first groove 6 of multiple parallel arrangements is formed, the depth and the ratio of the thickness of the packaging back board of first groove 6 are 0.6-0.8, each embedded buffering heat-conducting block 7 in first groove 6, a part for the buffering heat-conducting block 7 protrude from institute The lower surface of packaging back board is stated, the top surface of the buffering heat-conducting block 7 is contacted with the top surface of the first groove 6;In the envelope Circuit-wiring layer is formed on dress backboard(It is not shown), a LED core is respectively set on four side surfaces of the positive rectangular pyramid protrusion 5 Piece 8, and be electrically connected multiple LED chips 8 by the circuit-wiring layer;It is spread in the upper surface of the packaging back board If the first heat insulation packed glue-line 91, the first heat insulation packed glue-line 91 is by the gap between the adjacent positive rectangular pyramid protrusion 5 It fills up, the upper surface of the first heat insulation packed glue-line 91 is flat surface;Is laid on the first heat insulation packed glue-line 91 One fluorescence encapsulates glue-line 92;It is laid with the first layer of silica gel 93 on first fluorescence encapsulation glue-line 92;In first layer of silica gel The second fluorescence encapsulation glue-line 94 is laid on 93;It is laid with the second layer of silica gel 95 on second fluorescence encapsulation glue-line 94.
Wherein, the buffering heat-conducting block 7 includes the first metal derby 71, and it is recessed to open up one second in the bottom surface of the first metal derby 71 The ratio of slot 72, the depth of second groove 72 and the height of first metal derby 71 is 0.3-0.6, second groove The width ratio of 72 width and the bottom surface of first metal derby 71 is 0.3-0.6, the length of the second groove 72 Lenth ratio with the bottom surface of first metal derby 71 is 0.3-0.6;Then viscous in the leading flank of the first metal derby 71 The first caoutchouc layer of knot 73 bonds the second caoutchouc layer 74 in the trailing flank of first metal derby 71;Then described The first heat conduction silicone 75 is bonded on first caoutchouc layer 73, and the second thermal conductive silicon is bonded on second caoutchouc layer 74 Glue-line 76;Then the first epoxy resin adhesive layer 77 is laid in first heat conduction silicone 75, in second thermal conductive silicon The second epoxy resin adhesive layer 78 is laid on glue-line 76.
Embodiment 1:
A kind of preparation method of light emitting device package structure, includes the following steps:
1) metallic reflector is deposited in the lower surface of poly methyl methacrylate plastic plate, in the following table of the metallic reflector Face bonds elastic rubber layer, then outer weathering layer is bonded in the lower surface of the elastic rubber layer, to form packaging back board;
2)Multiple positive rectangular pyramid protrusions are bonded in the upper surface of poly methyl methacrylate plastic plate, multiple positive rectangular pyramids are convex It rises and arranges in matrix, the side surface of the positive rectangular pyramid protrusion and the angle of the bottom surface of the positive rectangular pyramid protrusion are 50 degree;
3)The first groove of multiple parallel arrangements, the depth of first groove and institute are formed in the lower surface of the packaging back board The ratio for stating the thickness of packaging back board is 0.7, embedded buffering heat-conducting block, the buffering heat-conducting block in each first groove A part protrude from the lower surface of the packaging back board, the top surface of the top surface and the first groove of the buffering heat-conducting block Contact;
4)A conductive metal layer is deposited on the packaging back board, and patterned process is carried out to be formed to the conductive metal layer Circuit-wiring layer is respectively arranged a LED chip on four side surfaces of the positive rectangular pyramid protrusion, and passes through the wiring Multiple LED chips are electrically connected by layer;
5)It is laid with the first heat insulation packed glue-line in the upper surface of the packaging back board, the first heat insulation packed glue-line is by adjacent institute The gap stated between positive rectangular pyramid protrusion is filled up, and the upper surface of the first heat insulation packed glue-line is flat surface;
6)The first fluorescence encapsulation glue-line is laid on the first heat insulation packed glue-line;
7)The first layer of silica gel is set on first fluorescence encapsulation glue-line upper berth;
8)The second fluorescence encapsulation glue-line is laid in first layer of silica gel;
9)The second layer of silica gel is set on second fluorescence encapsulation glue-line upper berth;
Wherein, the manufacture craft of the buffering heat-conducting block is:One second groove is opened up in the bottom surface of the first metal derby, described second The ratio of the depth of groove and the height of first metal derby is 0.5, the width of second groove and first metal The width ratio of the bottom surface of block is 0.5, the length of the length of the second groove and the bottom surface of first metal derby It is 0.4 to spend ratio;Then the first caoutchouc layer is bonded in the leading flank of the first metal derby, in the rear side of first metal derby Face bonds the second caoutchouc layer;Then the first heat conduction silicone is bonded on first caoutchouc layer, described second The second heat conduction silicone is bonded on caoutchouc layer;Then the first epoxy resin bonding is laid in first heat conduction silicone Layer, is laid with the second epoxy resin adhesive layer, to form the buffering heat-conducting block in second heat conduction silicone.
Wherein, the poly methyl methacrylate plastic plate includes polymethyl methacrylate and relative to the poly- first 100 parts by weight of base methyl acrylate are the heat conduction powder of 15 parts by weight, and the positive rectangular pyramid protrusion includes poly-methyl methacrylate Ester and relative to 100 parts by weight of the polymethyl methacrylate be 15 parts by weight heat conduction powder.The heat conduction powder Material is zinc oxide and aluminium nitride.The material of the metallic reflector is aluminium, and the thickness of the metallic reflector is 150 nanometers, The thickness of the elastic rubber layer is 2 millimeters, and the outer weathering layer is fluoropolymer resin layer, and the thickness of the outer weathering layer is 400 Micron.The width of first groove is 12 millimeters, and the spacing between adjacent first groove is 6 millimeters, and described first is recessed The width of slot is of same size with the buffering heat-conducting block, the length phase of the length of first groove and the buffering heat-conducting block Together, the height for the part that the buffering heat-conducting block protrudes from the photovoltaic back is 4 millimeters.The material of first metal derby Matter is copper, and the width of the bottom surface of first metal derby is 8 millimeters, first caoutchouc layer and second natural rubber The thickness of layer is 1.5 millimeters, and it is micro- that the thickness of first heat conduction silicone and second heat conduction silicone, which is 400, It is micron that the thickness of rice, the first EVA adhesive layers and the 2nd EVA adhesive layers, which is 100,.The first heat insulation packed glue Layer includes silica gel and the silicate powder relative to 100 parts by weight of the silica gel for 25 parts by weight, the silicate can be Magnesium silicate, the first fluorescence encapsulation glue-line include epoxy resin and are 5 weight relative to 100 parts by weight of the epoxy resin The fluorescent powder of part, the second fluorescence encapsulation glue-line include silica gel and are 15 parts by weight relative to 100 parts by weight of the silica gel Fluorescent powder.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as Protection scope of the present invention.

Claims (8)

1. a kind of preparation method of light emitting device package structure, it is characterised in that:Include the following steps:
1) metallic reflector is deposited in the lower surface of poly methyl methacrylate plastic plate, in the following table of the metallic reflector Face bonds elastic rubber layer, then outer weathering layer is bonded in the lower surface of the elastic rubber layer, to form packaging back board;
2)Multiple positive rectangular pyramid protrusions are bonded in the upper surface of poly methyl methacrylate plastic plate, multiple positive rectangular pyramids are convex It rises and arranges in matrix, the side surface of the positive rectangular pyramid protrusion and the angle of the bottom surface of the positive rectangular pyramid protrusion are 30 degree -60 Degree;
3)The first groove of multiple parallel arrangements, the depth of first groove and institute are formed in the lower surface of the packaging back board The ratio for stating the thickness of packaging back board is 0.6-0.8, and embedded buffering heat-conducting block, the buffering are led in each first groove A part for heat block protrudes from the lower surface of the packaging back board, the top of the top surface and the first groove of the buffering heat-conducting block Surface contacts;
4)A conductive metal layer is deposited on the packaging back board, and patterned process is carried out to be formed to the conductive metal layer Circuit-wiring layer is respectively arranged a LED chip on four side surfaces of the positive rectangular pyramid protrusion, and passes through the wiring Multiple LED chips are electrically connected by layer;
5)It is laid with the first heat insulation packed glue-line in the upper surface of the packaging back board, the first heat insulation packed glue-line is by adjacent institute The gap stated between positive rectangular pyramid protrusion is filled up, and the upper surface of the first heat insulation packed glue-line is flat surface;
6)The first fluorescence encapsulation glue-line is laid on the first heat insulation packed glue-line;
7)The first layer of silica gel is set on first fluorescence encapsulation glue-line upper berth;
8)The second fluorescence encapsulation glue-line is laid in first layer of silica gel;
9)The second layer of silica gel is set on second fluorescence encapsulation glue-line upper berth;
Wherein, the manufacture craft of the buffering heat-conducting block is:One second groove is opened up in the bottom surface of the first metal derby, described second The ratio of the depth of groove and the height of first metal derby is 0.3-0.6, the width of second groove and described first The width ratio of the bottom surface of metal derby is 0.3-0.6, and the length of the second groove is described with first metal derby The lenth ratio of bottom surface is 0.3-0.6;Then the first caoutchouc layer is bonded in the leading flank of the first metal derby, described first The trailing flank of metal derby bonds the second caoutchouc layer;Then the first heat conductive silica gel is bonded on first caoutchouc layer Layer bonds the second heat conduction silicone on second caoutchouc layer;Then is laid in first heat conduction silicone One epoxy resin adhesive layer is laid with the second epoxy resin adhesive layer in second heat conduction silicone, to form the buffering Heat-conducting block.
2. the preparation method of light emitting device package structure according to claim 1, it is characterised in that:The polymethyl Sour methyl esters plastic plate includes polymethyl methacrylate and is 10- relative to 100 parts by weight of the polymethyl methacrylate The heat conduction powder of 20 parts by weight, the positive rectangular pyramid protrusion include polymethyl methacrylate and relative to the poly- methyl-prop 100 parts by weight of e pioic acid methyl ester are the heat conduction powder of 10-20 parts by weight or including PET and relative to PET100 parts by weight are The heat conduction powder of 10-20 parts by weight.
3. the preparation method of light emitting device package structure according to claim 2, it is characterised in that:The heat conduction powder Material is one or more in aluminium oxide, zinc oxide, boron nitride, aluminium nitride, magnesia, silicon carbide and graphene.
4. the preparation method of light emitting device package structure according to claim 1, it is characterised in that:The metallic reflector Material be one kind in aluminium, copper, silver, the thickness of the metallic reflector is 100-200 nanometers, the thickness of the elastic rubber layer Degree is 1-3 millimeters, and the outer weathering layer is fluoropolymer resin layer, and the thickness of the outer weathering layer is 300-600 microns.
5. the preparation method of light emitting device package structure according to claim 4, it is characterised in that:First groove Width is 10-20 millimeter, and the spacing between adjacent first groove is 5-10 millimeters, the width of first groove with it is described The of same size of heat-conducting block is buffered, the length of first groove is identical as the buffering length of heat-conducting block, and the buffering is led The height that heat block protrudes from the part of the photovoltaic back is 2-5 millimeters.
6. the manufacturing method of light emitting device package structure according to claim 5, it is characterised in that:First metal derby Material be aluminium, copper, one kind in stainless steel, the width of the bottom surface of first metal derby is 7-14 millimeters, described first day The thickness of T PNR layer and second caoutchouc layer is 1-2 millimeters, and first heat conduction silicone and described second is led The thickness of hot layer of silica gel is that 400-800 is micron, and the thickness of the first EVA adhesive layers and the 2nd EVA adhesive layers is equal It is micron for 100-200.
7. the preparation method of light emitting device package structure according to claim 1, it is characterised in that:The first heat-insulated envelope Dress glue-line includes silica gel and the silicate powder relative to 100 parts by weight of the silica gel for 20-30 parts by weight, and described first is glimmering Light encapsulation glue-line include epoxy resin and relative to 100 parts by weight of the epoxy resin be 3-8 parts by weight fluorescent powder, it is described The second fluorescence encapsulation glue-line includes silica gel and the fluorescent powder relative to 100 parts by weight of the silica gel for 10-20 parts by weight.
8. a kind of light emitting device package structure, which is characterized in that the light emitting device package structure is any using claim 1-7 Prepared by the method described in form.
CN201810618387.5A 2018-06-15 2018-06-15 A kind of light emitting device package structure and preparation method thereof Active CN108767091B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810618387.5A CN108767091B (en) 2018-06-15 2018-06-15 A kind of light emitting device package structure and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810618387.5A CN108767091B (en) 2018-06-15 2018-06-15 A kind of light emitting device package structure and preparation method thereof

Publications (2)

Publication Number Publication Date
CN108767091A true CN108767091A (en) 2018-11-06
CN108767091B CN108767091B (en) 2019-11-01

Family

ID=64022702

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810618387.5A Active CN108767091B (en) 2018-06-15 2018-06-15 A kind of light emitting device package structure and preparation method thereof

Country Status (1)

Country Link
CN (1) CN108767091B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101814570A (en) * 2009-02-20 2010-08-25 Lg伊诺特有限公司 Light emitting device package and method for fabricating the same
CN201672331U (en) * 2010-05-28 2010-12-15 武峰 LED bulb
US20130049565A1 (en) * 2011-08-26 2013-02-28 Su Jung JUNG Light emitting device package
US20130313592A1 (en) * 2012-05-28 2013-11-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN203351662U (en) * 2013-06-28 2013-12-18 华侨大学 High luminous efficiency LED blue light COB light source
CN203910794U (en) * 2014-06-06 2014-10-29 四川广义微电子股份有限公司 Combined packaging structure of diode chips
CN106505140A (en) * 2016-12-28 2017-03-15 苏州诺联芯电子科技有限公司 A kind of infrared identification light source and manufacture method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101814570A (en) * 2009-02-20 2010-08-25 Lg伊诺特有限公司 Light emitting device package and method for fabricating the same
CN201672331U (en) * 2010-05-28 2010-12-15 武峰 LED bulb
US20130049565A1 (en) * 2011-08-26 2013-02-28 Su Jung JUNG Light emitting device package
US20130313592A1 (en) * 2012-05-28 2013-11-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN203351662U (en) * 2013-06-28 2013-12-18 华侨大学 High luminous efficiency LED blue light COB light source
CN203910794U (en) * 2014-06-06 2014-10-29 四川广义微电子股份有限公司 Combined packaging structure of diode chips
CN106505140A (en) * 2016-12-28 2017-03-15 苏州诺联芯电子科技有限公司 A kind of infrared identification light source and manufacture method

Also Published As

Publication number Publication date
CN108767091B (en) 2019-11-01

Similar Documents

Publication Publication Date Title
CN102290524B (en) LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof
CN101364626B (en) LED device
CN202196815U (en) High heat conducting substrate, light-emitting diode (LED) device and LED assembly
CN204118067U (en) Directly be packaged in the LED chip encapsulation architecture of radiator
CN101958387A (en) Novel LED light resource module packaging structure
CN101188224A (en) High heat radiation multi-chip integrated high-power white light LED module and its making method
CN204204900U (en) A kind of LED encapsulation structure
CN202076265U (en) LED module encapsulating structure and lighting device
CN202282384U (en) LED high density integration packaging high reflection aluminum base circuit board
CN204088315U (en) MCOB LED fluorescent powder separate package structure
CN108767091B (en) A kind of light emitting device package structure and preparation method thereof
CN203312358U (en) LED chip inverted packaging structure
CN202712176U (en) LED sealing structure using transparent oxide substrate
WO2015003402A1 (en) Bearing heat-dissipating plate, led light source of remote fluorescent powder structure and production method therefor
CN102646779B (en) Ceramic-based power type light-emitting diode and packaging method thereof
CN203746850U (en) High-efficiency LED module group device capable of omnibearing light emission
CN207199666U (en) A kind of flip-chip COB substrates and light source product
CN108807643B (en) A kind of semiconductor package and its manufacturing method
CN206947374U (en) A kind of LED light source component with graphene adhesive layer
CN102544342B (en) Heat radiator and electrode integrated heat radiating device and manufacturing method thereof
CN104022193A (en) Method and device for packaging border-free LED
CN102403413B (en) LED (Light-Emitting Diode) heat dissipation base plate, LED packaging structure, and manufacturing method of LED heat dissipation base plate and LED packaging structure
CN201570516U (en) LED packaging structure
CN108493320B (en) Nano composite buffer coating MCOB packaging aluminum nitride substrate and preparation method thereof
CN203760466U (en) LED packaging substrate high in heat conduction and high in light output

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20190919

Address after: 226600 169 Li Fa FA Road, Chengdong Town, Haian City, Nantong, Jiangsu.

Applicant after: Nantong Ji Zhi Intellectual Property Service Co., Ltd.

Address before: 226300 No. 266 Century Avenue, hi tech Zone, Jiangsu, Nantong

Applicant before: Nantong Voight Optoelectronics Technology Co., Ltd.

Effective date of registration: 20190919

Address after: 226600 169 Li Fa FA Road, Chengdong Town, Haian City, Nantong, Jiangsu.

Applicant after: Nantong Ji Zhi Intellectual Property Service Co., Ltd.

Address before: 226300 No. 266 Century Avenue, hi tech Zone, Jiangsu, Nantong

Applicant before: Nantong Voight Optoelectronics Technology Co., Ltd.

TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20191008

Address after: 226300 No. 266 Century Avenue, hi tech Zone, Jiangsu, Nantong

Applicant after: Nantong Voight Optoelectronics Technology Co., Ltd.

Address before: 226600 169 Li Fa FA Road, Chengdong Town, Haian City, Nantong, Jiangsu.

Applicant before: Nantong Ji Zhi Intellectual Property Service Co., Ltd.

Effective date of registration: 20191008

Address after: 226300 No. 266 Century Avenue, hi tech Zone, Jiangsu, Nantong

Applicant after: Nantong Voight Optoelectronics Technology Co., Ltd.

Address before: 226600 169 Li Fa FA Road, Chengdong Town, Haian City, Nantong, Jiangsu.

Applicant before: Nantong Ji Zhi Intellectual Property Service Co., Ltd.

GR01 Patent grant
GR01 Patent grant
CP02 Change in the address of a patent holder
CP02 Change in the address of a patent holder

Address after: 325600 No.15, Yongxing 2nd Road, Xintang Industrial Zone, Chengdong street, Yueqing City, Wenzhou City, Zhejiang Province

Patentee after: Nantong Voight Optoelectronics Technology Co., Ltd.

Address before: 226300 No. 266 Century Avenue, hi tech Zone, Jiangsu, Nantong

Patentee before: Nantong Voight Optoelectronics Technology Co., Ltd.

Address after: 325600 No.15, Yongxing 2nd Road, Xintang Industrial Zone, Chengdong street, Yueqing City, Wenzhou City, Zhejiang Province

Patentee after: Nantong Voight Optoelectronics Technology Co., Ltd.

Address before: 226300 No. 266 Century Avenue, hi tech Zone, Jiangsu, Nantong

Patentee before: Nantong Voight Optoelectronics Technology Co., Ltd.

TR01 Transfer of patent right

Effective date of registration: 20200521

Address after: 226600 No.188, Baichuan Road, Haian high tech Zone, Haian City, Nantong City, Jiangsu Province

Patentee after: JIANGSU SHUANGSHUANG HI-TECH Co.,Ltd.

Address before: 325600 No.15, Yongxing 2nd Road, Xintang Industrial Zone, Chengdong street, Yueqing City, Wenzhou City, Zhejiang Province

Patentee before: NANTONG WOTE OPTOELECTRONICS TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right