CN108767071B - A kind of white light emitting diode epitaxial piece and preparation method thereof - Google Patents
A kind of white light emitting diode epitaxial piece and preparation method thereof Download PDFInfo
- Publication number
- CN108767071B CN108767071B CN201810371709.0A CN201810371709A CN108767071B CN 108767071 B CN108767071 B CN 108767071B CN 201810371709 A CN201810371709 A CN 201810371709A CN 108767071 B CN108767071 B CN 108767071B
- Authority
- CN
- China
- Prior art keywords
- layer
- mos
- white light
- light emitting
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title description 4
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 122
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 122
- 229910015800 MoS Inorganic materials 0.000 claims abstract description 49
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 239000005864 Sulphur Substances 0.000 claims description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 229920000307 polymer substrate Polymers 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 150000001875 compounds Chemical class 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 241001025261 Neoraja caerulea Species 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- KRZGZGXXONWBRA-UHFFFAOYSA-N 1,4-bis(ethenyl)benzene;2-(phenylmethoxymethyl)oxirane;styrene Chemical compound C=CC1=CC=CC=C1.C=CC1=CC=C(C=C)C=C1.C1OC1COCC1=CC=CC=C1 KRZGZGXXONWBRA-UHFFFAOYSA-N 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N Molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N Simethicone Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- -1 polydimethylsiloxane, dimethyl Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Abstract
The invention discloses a kind of white light emitting diode epitaxial piece and its manufacturing methods, belong to technical field of semiconductors.Including substrate, and stack gradually buffer layer, undoped GaN layer, N-type layer, active layer, the first MoS on substrate2, the 2nd MoS2Layer and P-type layer, active layer include the In of alternating growthxGa1‑xN well layer and GaN barrier layer, 0.1≤x≤0.18, electrons and holes compound sending blue visible light, the first MoS in active layer2Layer is intrinsic MoS2Layer, electrons and holes are in the first MoS2Compound sending red visible in layer, the 2nd MoS2Layer is the MoS for mixing O2Layer, electrons and holes are in the 2nd MoS2Compound sending green visible in layer, the then final capable of emitting white light of LED, without using fluorescent powder.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of white light emitting diode epitaxial piece and its preparation side
Method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.Its core
The chip that center portion point is made of P-type semiconductor and N-type semiconductor, there is a transition between P-type semiconductor and N-type semiconductor
Layer, referred to as PN junction.In the PN junction of certain semiconductor materials, minority carrier and the majority carrier compound tense of injection can be more
Remaining energy releases in the form of light, so that electric energy is converted directly into luminous energy.
Existing blue-ray LED includes the epitaxial layer of substrate and setting on substrate, and epitaxial layer includes stacking gradually on substrate
Buffer layer, undoped GaN layer, N-type layer, active layer, electronic barrier layer and P-type layer.When a current passes through, N-type layer
The hole of electronics and P-type layer enters that active layer is compound, issues the visible light of the blue wave band of our needs.For blue-ray LED,
It is set finally to issue white light, it usually needs when blue-ray LED is packaged, yellow fluorescent powder is added, then uses package lens
Encapsulation, blue LED excited yellow fluorescent powder, that is, capable of emitting white wave band visible light.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Since the LED material that package lens use when packaged is epoxide resin material, in illumination and the influence of temperature rise
It may result in epoxy resin obviously to turn yellow, then become brown, package lens, which become brown, will affect its reflectivity, and
And the blue light issued is made to be not enough to excite yellow fluorescent powder, lead to not issue white light.
Summary of the invention
In order to which blue-ray LED issues in solving the problem of blue light is not enough to excite yellow fluorescent powder that can not issue white light, this
Inventive embodiments provide a kind of white light emitting diode epitaxial piece and preparation method thereof.The technical solution is as follows:
On the one hand, the present invention provides a kind of white light emitting diode epitaxial piece, the white light emitting diode epitaxial pieces
Including substrate, and buffer layer, undoped GaN layer, N-type layer, active layer and P-type layer over the substrate is stacked gradually,
The active layer includes the In of alternating growthxGa1-xN well layer and GaN barrier layer, 0.1≤x≤0.18, the white light hair
Optical diode epitaxial wafer further includes the first MoS being arranged between the active layer and the P-type layer2Layer and the 2nd MoS2Layer, institute
State the first MoS2Layer is intrinsic MoS2Layer, the 2nd MoS2Layer is the MoS for mixing O2Layer.
Further, the first MoS2Layer with a thickness of 0.65~1.95nm.
Further, the 2nd MoS2Layer with a thickness of 0.65~1.95nm.
On the other hand, the present invention provides a kind of manufacturing method of white light emitting diode epitaxial piece, the manufacturing methods
Include:
One substrate is provided；
Successively grown buffer layer, undoped GaN layer, N-type layer and active layer over the substrate, wherein described active
Layer includes the In of alternating growthxGa1-xN well layer and GaN barrier layer, 0.1≤x≤0.18；
The first MoS is formed on the active layer2Layer, the first MoS2Layer is intrinsic MoS2Layer；
In the first MoS2Two MoS of growth regulation on layer2Layer, the 2nd MoS2Layer is the MoS for mixing O2Layer；
In the 2nd MoS2Growing P-type layer on layer.
Further, described to form the first MoS on the active layer2Layer, comprising:
Using the method for mechanical stripping from MoS2On piece separates MoS2Layer；
By the MoS2Layer, which is transferred on the active layer, forms the first MoS2Layer.
Further, the method using mechanical stripping is from MoS2On piece separates MoS2Layer, by the MoS2Layer transfer
The first MoS is formed on to the active layer2Layer, comprising:
By the MoS2In layer removing to dimethyl silicone polymer substrate；
By the MoS on the dimethyl silicone polymer substrate2Layer is transferred on the active layer.
Further, described in the first MoS2Two MoS of growth regulation on layer2Layer, comprising:
With MoO3It is raw material with sulphur powder, using chemical vapour deposition technique in the first MoS2Two MoS of growth regulation on layer2Layer.
Further, described to use chemical vapour deposition technique in the first MoS2Two MoS of growth regulation on layer2Layer, comprising:
It is 500-700 DEG C in growth temperature, growth pressure is in the chemical vapor deposition chamber of 5-100mTorr, using Ar
For carrier gas, in the first MoS2Two MoS of growth regulation on layer2Layer.
Further, the first MoS2Layer with a thickness of 0.65~1.95nm.
Further, the 2nd MoS2Layer with a thickness of 0.65~1.95nm.
Technical solution provided in an embodiment of the present invention has the benefit that
Due to the In of active layerxGa1-xIn N well layer, 0.1≤x≤0.18, then active layer issues the visible light of blue wave band,
By the way that the first MoS is arranged between active layer and P-type layer2Layer and the 2nd MoS2Layer, the first MoS2Layer is intrinsic MoS2Layer, it is intrinsic
MoS2The energy level of layer is lower, and capable of emitting ENERGY E is in 1.5eV or so, and correspondingly, electrons and holes are in the first MoS2Layer is compound can
Issue the visible light of red band, the 2nd MoS2Layer is the MoS for mixing O2Layer, due to the 2nd MoS2The energy level of layer is higher, capable of emitting
ENERGY E is in 2eV or so, and correspondingly, electrons and holes are in the 2nd MoS2The visible light of the compound capable of emitting green band of layer.Then issue
First MoS of the visible light of the active layer and sending red band of the visible light of blue wave band2Layer and issue green band
2nd MoS of visible light2Layer matches, and LED finally may make to issue white light and keep away without using fluorescent powder in encapsulation process
The light for having exempted from LED sending is not enough to the case where excitated fluorescent powder issues white light generation.Simultaneously because the 2nd MoS2The energy level of layer is high
In the first MoS2Layer, therefore the 2nd MoS2Layer may act as electronic barrier layer and stop electronics, enable electrons and holes active
Layer, the first MoS2Layer and the 2nd MoS2Layer recombination luminescence, improves the luminous efficiency of LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of white light emitting diode epitaxial piece provided in an embodiment of the present invention；
Fig. 2 is a kind of method flow of the manufacturing method of white light emitting diode epitaxial piece provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of white light emitting diode epitaxial piece, Fig. 1 is provided in an embodiment of the present invention one
The structural schematic diagram of kind white light emitting diode epitaxial piece, as shown in Figure 1, white light emitting diode epitaxial piece includes substrate 1, with
And it is sequentially laminated on buffer layer 2, undoped GaN layer 3, N-type layer 4, active layer 5, the first MoS on substrate 12Layer 6, second
MoS2Layer 7 and P-type layer 8.
Wherein, active layer 5 includes the In of alternating growthxGa1-xN well layer 51 and GaN barrier layer 52,0.1≤x≤0.18, first
MoS2Layer 6 is intrinsic MoS2Layer, the 2nd MoS2Layer 7 is the MoS for mixing O2Layer.
Due to the In of active layerxGa1-xIn N well layer, 0.1≤x≤0.18, then active layer issues the visible light of blue wave band,
By the way that the first MoS is arranged between active layer and P-type layer2Layer and the 2nd MoS2Layer, the first MoS2Layer is intrinsic MoS2Layer, it is intrinsic
MoS2The energy level of layer is lower, and capable of emitting ENERGY E is in 1.5eV or so, and correspondingly, electrons and holes are in the first MoS2Layer is compound can
Issue the visible light of red band, the 2nd MoS2Layer is the MoS for mixing O2Layer, due to the 2nd MoS2The energy level of layer is higher, capable of emitting
ENERGY E is in 2eV or so, and correspondingly, electrons and holes are in the 2nd MoS2The visible light of the compound capable of emitting green band of layer.Then issue
First MoS of the visible light of the active layer and sending red band of the visible light of blue wave band2Layer and issue green band
2nd MoS of visible light2Layer matches, and LED finally may make to issue white light and keep away without using fluorescent powder in encapsulation process
The light for having exempted from LED sending is not enough to the case where excitated fluorescent powder issues white light generation.Simultaneously because the 2nd MoS2The energy level of layer is high
In the first MoS2Layer, therefore the 2nd MoS2Layer may act as electronic barrier layer and stop electronics, enable electrons and holes active
Layer, the first MoS2Layer and the 2nd MoS2Layer recombination luminescence, improves the luminous efficiency of LED.
In embodiments of the present invention, the first MoS2ENERGY E=the 1.5eV, the 2nd MoS that layer 6 issues2The ENERGY E that layer 7 issues
=2eV, according to formula: the first MoS can be calculated in wavelength=1024/E2The wavelength of layer 6 is 682.6nm, the 2nd MoS2Layer 7
Wavelength be 512nm.Therefore, the first MoS2The visible light of 6 capable of emitting red of layer, and the 2nd MoS2Layer 7 it is capable of emitting green it is visible
Light.
Further, the first MoS2Layer 6 with a thickness of 0.65~1.95nm.If the first MoS2Layer 6 thickness it is excessively thin, then without
Method issues red visible light, if the first MoS2The thickness of layer 6 is blocked up, and meeting extinction reduces the luminous efficiency of LED.
In the present embodiment, the first MoS2The method of mechanical stripping can be used from MoS in layer 62On piece is removed to obtain.
Preferably, the first MoS2Layer 6 with a thickness of 0.65nm.Electrons and holes are in the first MoS at this time2Compound hair in layer 6
Light efficiency is best.
Further, the 2nd MoS2Layer 7 with a thickness of 0.65~1.95nm.If the 2nd MoS2Layer 7 thickness it is excessively thin, then without
Method issues the visible light of green, while not having the effect for stopping electronics, if the 2nd MoS2The thickness of layer 7 is blocked up, then can stop
Hole, at the same can also extinction, influence luminous efficiency.
Preferably, the 2nd MoS2Layer 7 with a thickness of 0.65nm.Electrons and holes are in the 2nd MoS at this time2Compound hair in layer 7
Light efficiency is best.
In the present embodiment, the 2nd MoS2Layer 7 is 500-700 DEG C in growth temperature, and growth pressure is 5-100mTorr's
In chemical vapor deposition chamber, with MoO3It is raw material with sulphur powder, Ar is that carrier gas is grown.
Optionally, substrate 1 can be the Sapphire Substrate of (0001) crystal orientation.
Optionally, buffer layer 2 can be GaN layer, and thickness can be 15~35nm.
Optionally, the thickness of undoped GaN layer 3 can be 1~5um.
Optionally, N-type layer 4 can be to mix the GaN layer of Si, and wherein the doping concentration range of Si is 1018cm-3-1019cm-3；N
The thickness of type layer 4 can be 1~5um.
Optionally, active layer 5 can be by the In in 5~11 periodsxGa1-x52 superlattice structure of N well layer 51 and GaN barrier layer
Composition, wherein every layer of InxGa1-xThe thickness of N well layer 51 can be 2~3nm, the thickness of every layer of GaN barrier layer 52 can for 9~
20nm。
Optionally, P-type layer 8 can be to mix the GaN layer of Mg, and the thickness of P-type layer 8 can be 5~300nm.
Embodiment two
The embodiment of the invention provides a kind of manufacturing methods of white light emitting diode epitaxial piece, mention suitable for embodiment one
The white light emitting diode epitaxial piece of confession, Fig. 2 are a kind of systems of white light emitting diode epitaxial piece provided in an embodiment of the present invention
The method flow diagram of method is made, as shown in Fig. 2, the manufacturing method includes:
Step 201 provides a substrate.
Optionally, substrate is the Al of (0001) crystal orientation2O3Sapphire Substrate.
Specifically, which includes:
In a hydrogen atmosphere, high-temperature process substrate 8min.Wherein, reaction chamber temperature is 1000-1200 DEG C, chamber pressure
Control is in 200-500torr.
Step 202, on substrate grown buffer layer.
Specifically, buffer layer is GaN layer, with a thickness of 15~35nm.Reaction chamber temperature is 400-600 DEG C, chamber pressure
Control is in 400-600torr.
Further, step 202 further include:
Chamber pressure is constant, and temperature is increased to 1000 DEG C -1200 DEG C, to buffer layer carry out in-situ annealing processing 5~
10min。
Step 203 grows undoped GaN layer on the buffer layer.
In the present embodiment, undoped GaN layer is with a thickness of 1~5um.When growing undoped GaN layer, reaction chamber temperature
It is 1000-1100 DEG C, chamber pressure is controlled in 100-500torr.
Step 204 grows N-type layer in undoped GaN layer.
In the present embodiment, N-type layer is to mix the GaN layer of Si, and Si doping concentration is 1018cm-3-1019cm-3Between, with a thickness of
1~5um.When growing N-type layer, reaction chamber temperature is 1000-1200 DEG C, and chamber pressure is controlled in 100-500torr.
Step 205 grows active layer in N-type layer.
Active layer may include the In in 5~11 periodsxGa1-xN well layer and GaN barrier layer superlattice structure, 0.1≤x≤
0.18.Wherein, every layer of InxGa1-xN well layer with a thickness of 2~3nm, every layer of GaN barrier layer with a thickness of 9~20nm.
Specifically, when growing active layer, chamber pressure is controlled in 100-500torr.Grow InxGa1-xWhen N well layer, instead
Answering room temperature is 720-829 DEG C.When growing GaN barrier layer, reaction chamber temperature is 850-952 DEG C.
It should be noted that in the present embodiment, active layer issues the visible light of blue.
Step 206 forms the first MoS on active layer2Layer.
Specifically, the first MoS2Layer is intrinsic MoS2Layer, with a thickness of 0.65~1.95nm.If the first MoS2The thickness mistake of layer
It is thin, then red visible light can not be issued, if the first MoS2The thickness of layer is blocked up, and meeting extinction reduces the luminous efficiency of LED.
In the present embodiment, the method for mechanical stripping can be used from MoS2On piece separates MoS2Layer, then by the MoS2
Layer is transferred to the first MoS of formation on active layer2Layer.
It specifically, can will be from MoS2The MoS that on piece separates2Layer is placed by PDMS
On substrate made of (polydimethylsiloxane, dimethyl silicone polymer) material, then by the dimethyl silicone polymer
MoS on substrate2Layer is transferred on active layer, forms the first MoS2Layer.
In the present embodiment, the first MoS2Layer with a thickness of 0.65nm.
It should be noted that electrons and holes are in the first MoS2Recombination luminescence in layer, sending is the visible of red band
Light.
Step 207, in the first MoS2Two MoS of growth regulation on layer2Layer.
Specifically, the 2nd MoS2Layer is the MoS for mixing O2Layer, with a thickness of 0.65~1.95nm.If the 2nd MoS2The thickness of layer 7
It is excessively thin, then the visible light of green can not be issued, while not having the effect for stopping electronics, if the 2nd MoS2The thickness of layer 7 is blocked up,
Can then stop hole, at the same can also extinction, influence luminous efficiency.
Specifically, step 207 includes:
With MoO3It is raw material with sulphur powder, using chemical vapour deposition technique in the first MoS2Two MoS of growth regulation on layer2Layer.
Wherein, using chemical vapour deposition technique in the first MoS2Two MoS of growth regulation on layer2Layer, comprising:
It is 500-700 DEG C in growth temperature, growth pressure is in the chemical vapor deposition chamber of 5-100mTorr, using Ar
For carrier gas, in the first MoS2Two MoS of growth regulation on layer2Layer.
In the present embodiment, the 2nd MoS2Layer with a thickness of 0.65nm.
It should be noted that electrons and holes are in the 2nd MoS2Recombination luminescence in layer, sending is the visible of green band
Light.
Step 208, in the 2nd MoS2Growing P-type layer on layer.
In the present embodiment, P-type layer is to mix the GaN layer of Mg, with a thickness of 5~300nm.When growing P-type layer, reaction chamber temperature
It is 850-1050 DEG C, chamber pressure is controlled in 100-300torr.
After epitaxial wafer is grown, reaction chamber temperature is reduced to 650 DEG C -850 DEG C, moves back epitaxial wafer in nitrogen atmosphere
Fire 5~15min of processing, is then down to room temperature, epitaxial growth terminates.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of white light emitting diode epitaxial piece, the white light emitting diode epitaxial piece includes substrate, and is stacked gradually
Buffer layer, undoped GaN layer, N-type layer, active layer and P-type layer over the substrate, which is characterized in that
The active layer includes the In of alternating growthxGa1-xN well layer and GaN barrier layer, 0.1≤x≤0.18, the white-light emitting two
Pole pipe epitaxial wafer further includes the first MoS being arranged between the active layer and the P-type layer2Layer and the 2nd MoS2Layer, described the
One MoS2Layer is intrinsic MoS2Layer, the 2nd MoS2Layer is the MoS for mixing O2Layer.
2. white light emitting diode epitaxial piece according to claim 1, which is characterized in that the first MoS2The thickness of layer
For 0.65~1.95nm.
3. white light emitting diode epitaxial piece according to claim 1 or 2, which is characterized in that the 2nd MoS2The thickness of layer
Degree is 0.65~1.95nm.
4. a kind of manufacturing method of white light emitting diode epitaxial piece, which is characterized in that the manufacturing method includes:
One substrate is provided；
Successively grown buffer layer, undoped GaN layer, N-type layer and active layer over the substrate, wherein the active layer packet
Include the In of alternating growthxGa1-xN well layer and GaN barrier layer, 0.1≤x≤0.18；
The first MoS is formed on the active layer2Layer, the first MoS2Layer is intrinsic MoS2Layer；
In the first MoS2Two MoS of growth regulation on layer2Layer, the 2nd MoS2Layer is the MoS for mixing O2Layer；
In the 2nd MoS2Growing P-type layer on layer.
5. manufacturing method according to claim 4, which is characterized in that described to form the first MoS on the active layer2Layer,
Include:
Using the method for mechanical stripping from MoS2On piece separates MoS2Layer；
By the MoS2Layer, which is transferred on the active layer, forms the first MoS2Layer.
6. manufacturing method according to claim 5, which is characterized in that the method using mechanical stripping is from MoS2On piece
Separate MoS2Layer, by the MoS2Layer, which is transferred on the active layer, forms the first MoS2Layer, comprising:
By the MoS2In layer removing to dimethyl silicone polymer substrate；
By the MoS on the dimethyl silicone polymer substrate2Layer is transferred on the active layer.
7. manufacturing method according to claim 4 or 5, which is characterized in that described in the first MoS2Growth regulation two on layer
MoS2Layer, comprising:
With MoO3It is raw material with sulphur powder, using chemical vapour deposition technique in the first MoS2Two MoS of growth regulation on layer2Layer.
8. manufacturing method according to claim 7, which is characterized in that described to use chemical vapour deposition technique described first
MoS2Two MoS of growth regulation on layer2Layer, comprising:
It is 500-700 DEG C in growth temperature, growth pressure is to use Ar in the chemical vapor deposition chamber of 5-100mTorr to carry
Gas, in the first MoS2Two MoS of growth regulation on layer2Layer.
9. manufacturing method according to claim 4 or 5, which is characterized in that the first MoS2Layer with a thickness of 0.65~
1.95nm。
10. manufacturing method according to claim 4 or 5, which is characterized in that the 2nd MoS2Layer with a thickness of 0.65~
1.95nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810371709.0A CN108767071B (en) | 2018-04-24 | 2018-04-24 | A kind of white light emitting diode epitaxial piece and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810371709.0A CN108767071B (en) | 2018-04-24 | 2018-04-24 | A kind of white light emitting diode epitaxial piece and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108767071A CN108767071A (en) | 2018-11-06 |
| CN108767071B true CN108767071B (en) | 2019-08-02 |
Family
ID=64011438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810371709.0A Active CN108767071B (en) | 2018-04-24 | 2018-04-24 | A kind of white light emitting diode epitaxial piece and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108767071B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261764B (en) * | 2020-01-22 | 2021-10-15 | 山西穿越光电科技有限责任公司 | Blue light/red light double-color LED chip packaging structure and preparation method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9595624B2 (en) * | 2012-07-12 | 2017-03-14 | Massachussets Institute Of Technology | Strain engineered bandgaps |
| TWI533475B (en) * | 2014-01-23 | 2016-05-11 | 逢甲大學 | Light-emitting device. |
| CN104465915A (en) * | 2014-12-17 | 2015-03-25 | 聚灿光电科技(苏州)有限公司 | Led chip and manufacturing method thereof |
| CN105206715B (en) * | 2015-09-16 | 2019-09-17 | Tcl集团股份有限公司 | A kind of QLED and preparation method thereof of exciton confinement structure |
| CN105161585B (en) * | 2015-09-23 | 2019-02-26 | Tcl集团股份有限公司 | A kind of threadiness light emitting diode with quantum dots and preparation method thereof |
| CN106299050B (en) * | 2016-11-17 | 2018-08-17 | 河北工业大学 | A kind of deep ultraviolet semiconductor light-emitting-diode and preparation method thereof |
-
2018
- 2018-04-24 CN CN201810371709.0A patent/CN108767071B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108767071A (en) | 2018-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106410005B (en) | A kind of GaN-based LED epitaxial wafer and its growing method | |
| CN106784210B (en) | A kind of epitaxial wafer of light emitting diode and preparation method thereof | |
| CN103337573B (en) | The epitaxial wafer of semiconductor light-emitting-diode and manufacture method thereof | |
| CN104810442B (en) | A kind of LED epitaxial slice and its growing method | |
| CN106601882B (en) | A kind of epitaxial wafer and its manufacturing method of light emitting diode | |
| US20140302665A1 (en) | Method for producing an optoelectronic nitride compound semiconductor component | |
| CN103904177B (en) | LED epitaxial slice and its manufacture method | |
| CN107195737B (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN105679900B (en) | A kind of gallium nitride based light emitting diode and preparation method thereof | |
| CN109950368A (en) | Gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN106159048A (en) | A kind of LED epitaxial slice and growing method thereof | |
| CN109360878A (en) | A kind of epitaxial wafer of light emitting diode and preparation method thereof | |
| CN108461592A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN109309150A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN108767071B (en) | A kind of white light emitting diode epitaxial piece and preparation method thereof | |
| CN109346576A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109326697A (en) | A kind of GaN base light emitting epitaxial wafer and preparation method thereof | |
| CN109065679A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN108831974A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN108598226A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN108447952A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN108470808A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN105789399B (en) | P-type broad stopband oxide and ZnO combination vertical structure light-emitting devices and preparation method thereof | |
| CN107833953A (en) | MicroLED multiple quantum well layer growing methods | |
| CN105552178B (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |