CN108723595A - A kind of ultrafast laser welder and method - Google Patents
A kind of ultrafast laser welder and method Download PDFInfo
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- CN108723595A CN108723595A CN201810385746.7A CN201810385746A CN108723595A CN 108723595 A CN108723595 A CN 108723595A CN 201810385746 A CN201810385746 A CN 201810385746A CN 108723595 A CN108723595 A CN 108723595A
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- ultrafast laser
- welded
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- silicon chip
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/21—Bonding by welding
- B23K26/24—Seam welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
Abstract
The present invention provides a kind of ultrafast laser welder and methods, belong to laser welding processing technique field.It is solved in existing welding method, is welded the weld strength of sample and is used the more low technical problem of durability degree.This ultrafast laser welding method includes the following steps：S01, pretreatment：Optical contact processing is carried out to sample to be welded, sheet glass and silicon chip is made to fit closely；S02, laser beam is adjusted：Ultrafast laser beam is generated using ultrafast laser, and adjusts the wave band, output power and repetition rate of ultrafast laser beam；S03, processing：Laser beam transparent optic delivery systems, the galvanometer scanning system of ultrafast laser transmitting after focusing at the sheet glass on workbench and the contact surface between silicon chip, adjust focal position by workbench, are welded to sample to be welded.This ultrafast laser welding method can improve the weld strength of sample to be welded and use durability degree, avoid the pollution of addition solder or adhesive to sample to be welded.
Description
Technical field
The invention belongs to laser welding processing technique field, it is related to a kind of ultrafast laser welder and method.
Background technology
The bonding of glass and silicon chip can be used for encapsulating electronic chip and process biochip, in life science, electronics science
It is widely used with fields such as space flight and aviation.In traditional adhesive technology, expensive and toxic part gluing is generally used
Agent, or be using the solder or coating added between laser welding process heating melted material.
The durability degree of adhesive or solder that the above method uses is low, easy to aging, and can be polluted to glass and silicon chip,
It is not achieved and applies in chip package and the clean requirement used.The especially use of biochip should strictly be avoided to be measured
The secondary pollution of liquid.
It is therefore desirable to introduce a kind of ultrafast laser welding that can realize that durability degree is high, is not polluted to sheet glass and silicon chip
Device and technique.
Invention content
The present invention existing above problem in view of the prior art, provides a kind of ultrafast laser welder, it can be carried
The weld strength of high sample to be welded and durability degree is used, avoids the pollution of addition solder or adhesive to sample to be welded.
Object of the invention can be realized by the following technical scheme：
A kind of ultrafast laser welder, which is characterized in that including ultrafast laser, optic delivery systems, vibration mirror scanning
System, workbench and for by the fixed welding fixture of sample to be welded, the optic delivery systems to be for sending out the laser
The laser beam penetrated is conducted to the galvanometer scanning system, and the workbench is located at the lower section of the galvanometer scanning system, the weldering
Welding fixture is fixed on the table.
Its operation principle is：Welding fixture welds sample (sheet glass and silicon chip) to be welded, optic delivery systems for fixed
Enter galvanometer scanning system for conducting the laser beam emitted by laser, galvanometer scanning system focuses laser beam and controls laser
Beam scanning track waiting for forming focal beam spot between the sheet glass of stitch welding and silicon chip, and wherein laser is for controlling laser beam
Wave band, output power and repetition rate, optic delivery systems are used to control quality and the loss of laser beam, galvanometer scanning system
Then control processing method and sweep speed, the dynamic control of three shaft rotations carried out in conjunction with galvanometer scanning system and workbench, to x, y, z axis into
Row regulation and control, focal position of the control laser beam in sample to be welded.By the control to system above can to the wave band of laser beam,
The technological parameters such as output power, repetition rate, processing method, speed and defocusing amount are adjusted, and obtain suitable processing ginseng
Number, welds sample to be welded.The present invention use the direct welding glass of ultrafast laser and silicon chip, avoid addition solder or
Pollution of the adhesive to sample to be welded avoids using the secondary pollution caused by process, utilizes the non-linear suction of ultrafast laser
It produces effects and answers, realize that cold working, weld seam periphery generate minimum residual stress and temperature gradient distribution, avoids to electronics to be packaged
High-precision processing is realized in the damage of component, is improved weld strength and is used durability degree, preferable stitch welding can be brought to imitate
Fruit.
In a kind of above-mentioned ultrafast laser welder, the welding fixture includes ontology, is offered on the ontology
Accommodating chamber for placing sample to be welded, if being threaded with bolt stem on the roof of the accommodating chamber, the screw rod of each bolt is equal
It can extend in the accommodating chamber.In use, sample to be welded (sheet glass and silicon chip) is superimposed and is put into receiving together
It is interior, rotate each bolt later, when the screw rod of each bolt and sheet glass lean, bolt two panels sample to be welded compress and
Both make closely against can reduce gap between the two as far as possible in this way, improve weld strength.
It is a further object of the invention to provide a kind of ultrafast laser welding methods.
Object of the invention can be realized by the following technical scheme：
A kind of ultrafast laser welding method, which is characterized in that include the following steps：
S01, pretreatment：Optical contact processing is carried out to sample to be welded, sheet glass and silicon chip is made to fit closely, eliminates glass
The air of contact surface between piece and silicon chip makes the contact surface between sheet glass and silicon chip without interference fringe；
S02, laser beam is adjusted：Laser beam is generated using ultrafast laser, and adjust the wave band of laser beam, output power and
Repetition rate；
S03, processing：Laser beam transparent optic delivery systems, the galvanometer scanning system of ultrafast laser transmitting, focus on work
After making at the sheet glass on platform and the contact surface between silicon chip, by workbench adjust focal position, in conjunction with laser beam wave band,
Output power and repetition rate adjust sweep speed by galvanometer scanning system, are welded to sample to be welded.
In a kind of above-mentioned ultrafast laser welding method, the sample to be welded is sheet glass and silicon chip, the sheet glass
Thickness for soda lime glass piece, the sheet glass is 0.3mm -1.5mm, and the thickness of the silicon chip is 0.7mm -
2.0mm。
As another embodiment, sheet glass can also be the tempered glass for adulterating rare element or low alkali borosilicate glass
Glass or rear-earth-doped borosilicate glass etc..
In a kind of above-mentioned ultrafast laser welding method, the optical contact processing includes the following steps：Cleaning, drying
And extruding, the cleaning is, to sample clean 5-10 minutes to be welded, the drying is straight using nitrogen using ultrasonic cleaner
Connect drying, it is described to squeeze as to sample extrusion to be welded 20-30 minutes.
Pretreatment is pre-processed and is handled for optical contact before S02 steps, and specific implementation steps are：To be welded
Glass and silicon chip are cleaned, dried up and are squeezed.Cleaning step is specially using ultrasonic cleaner clean within 5-10 minutes,
Drying step is directly to be dried up using nitrogen, and pressing steps are to squeeze sample (glass and silicon chip) to be welded 20-30 minutes so that two
Fitting is enough to close between person, if without interference fringe, sample to be welded when observing contact surface between the two through sheet glass
Pretreatment reaches welding requirements, and in process can be using welding fixture to ensure to fit closely between the two.
In a kind of above-mentioned ultrafast laser welding method, the power of the ultrafast laser is 5-50W, ultrafast laser
The wavelength of the laser beam of transmitting is 515nm-1064nm, pulsewidth 15ps-300fs, repetition rate 90kHz-1MHz.
In a kind of above-mentioned ultrafast laser welding method, the galvanometer scanning system slowly walks linear array using focal beam spot
Mode be processed, the Trace speed of galvanometer scanning system is 0.1mm/s-20mm/s.
Compared with prior art, advantages of the present invention is as follows：
1, the present invention uses the direct welding glass of ultrafast laser and silicon chip, avoids addition solder or adhesive to be welded
The pollution of sample, avoids using the secondary pollution caused by process, and the method welded using ultrafast laser rationally controls laser
The machined parameters of pulse can obtain deeper molten bath, while can be according to different application fields for weld strength and weldering
The demand of slit width degree adjusts suitable machined parameters, realizes the setting of personalized technological parameter.
2, using the Nonlinear optical absorption of ultrafast laser, cold working is realized, weld seam periphery generates minimum residual stress
It is distributed with temperature gradient, avoids the damage for treating packaging electronic parts, realize high-precision processing, improve weld strength
With use durability degree, so as to bring preferable stitch welding effect, while not needing expensive adhesive, increase economic efficiency,
Also cleaning solution and activating solution with pollution need not be used, process is simplified, processing efficiency is improved, meets environmental protection and want
It asks.
Description of the drawings
Fig. 1 is the operation principle block diagram of ultrafast laser welder.
Fig. 2 is the schematic diagram that sheet glass is stacked on silicon chip.
Fig. 3 is the flow diagram of this welding method.
Fig. 4 is the structural schematic diagram of welding fixture.
In figure, 1, ultrafast laser；2, optic delivery systems；3, galvanometer scanning system；4, welding fixture；5, workbench；
6, bolt；7, sheet glass；8, silicon chip；9, laser beam.
Specific implementation mode
Following is a specific embodiment of the present invention in conjunction with the accompanying drawings, technical scheme of the present invention will be further described,
However, the present invention is not limited to these examples.
As shown in Figure 1, this ultrafast laser welder includes ultrafast laser 1, optic delivery systems 2, vibration mirror scanning system
System 3, workbench 5 and for by the fixed welding fixture 4 of sample to be welded, optic delivery systems 2 to be for emitting ultrafast laser 1
Laser beam 9 conduct to galvanometer scanning system 3, workbench 5 is located at the lower section of galvanometer scanning system 3, and welding fixture 4 is fixed on work
Make on platform 5.Ultrafast laser 1 is located at the side of optic delivery systems 2, after galvanometer scanning system 3 is located at optic delivery systems 2
Side, welding fixture 4 are set to the lower section on workbench 5 and positioned at galvanometer scanning system 3.Optic delivery systems 2 are sharp for transmitting
Light beam 9, and beam quality can be optimized, optic delivery systems 2 include speculum, photoscope and beam expanding lens；Galvanometer scanning system 3
The controllable controlling laser beam in inside 9 the movement on the direction x, y, pass through and exchange the camera lens of different focal length focal beam spot is adjusted
Size, and by controlling galvanometer scanning system 3 in the position of vertical direction, can control laser beam 9 z-axis direction position
It sets.
As shown in Fig. 2, the present invention welds sheet glass 7 and silicon chip 8 to be welded using the mode of stitch welding, sheet glass 7 exists
Top, the wet look and glass contact of silicon chip 8, in lower section, the two is placed in after stacking extruding in welding fixture 4 silicon chip 8.
Laser beam 9 is emitted by ultrafast laser 1 first, the laser beam 9 of transmitting is incident to after optic delivery systems 2
Galvanometer scanning system 3 is focused processing by galvanometer scanning system 3 to laser beam 9, keeps laser beam 9 solid on welding fixture 4
Focal beam spot is formed at the interface of fixed sample to be welded, and sample to be welded is welded using focal beam spot.
In laser beam welding, the laser beam 9 of high-energy density focuses at the interface of sample to be welded, due to silicon member
The Raman spectrum peak value of element is 520nm, has stronger absorptivity for the laser of ultrafast wave band, and ultrafast laser has very
High peak power is different from the laser of nano waveband, and ultrafast laser acts on material the absorption threshold value for easily reaching material,
And then generate Nonlinear optical absorption and generate photoionization and avalanche ionization, there is tear in material internal in the extremely short time
The melting zone of shape realizes the welding of glass and silicon chip 8.But it since Semiconducting Silicon Materials have larger refractive index, is partly leading
The amplitude of body material medium wave reduces with the depth penetrated, i.e., there is the absorptions of light.Due to having freedom inside conducting medium
The presence of electronics, light wave evoke conduction electric current in communication process in medium, and the portion of energy of light wave is converted to the coke of electric current
It has burning ears.Therefore, the microscopic appearance of 8 weld seam of glass and silicon chip is observed by Laser Scanning Confocal Microscope, is found in inside glass
The structure (pattern of reaction material internal focus hot spot) for the complete teardrop shaped that can be showed, in glass and silicon chip 8
Welding region only shows the top half of teardrop shaped structure in inside glass.
The technological parameter of welding is adjusted by adjusting galvanometer scanning system 3, the welding effect that can be optimal, technique
Parameter includes the frequency of laser beam 9, the power of laser beam 9, the Trace speed of galvanometer scanning system 3, the delay of switch light and focus
Position etc..
As shown in figure 4, welding fixture 4 includes ontology, the accommodating chamber for placing sample to be welded is offered on ontology, is accommodated
If being threaded with bolt stem 6 on the roof of chamber, the screw rod of each bolt 6 can extend in accommodating chamber.In use, by sample to be welded
Product (sheet glass 7 and silicon chip 8) are superimposed and are put into receiving together, each bolt 6 are rotated later, when the screw rod of each bolt 6
When leaning with sheet glass 7, bolt 6 compresses two panels sample to be welded and both is made closely against in this way can be as far as possible
Gap between the two is reduced, weld strength is improved.
As shown in figure 3, this ultrafast laser welding method includes the following steps：
S01, pretreatment：Optical contact processing is carried out to sample to be welded, sheet glass 7 and silicon chip 8 is made to fit closely, eliminates glass
The air of contact surface between glass piece 7 and silicon chip 8 makes the contact surface between sheet glass 7 and silicon chip 8 without interference fringe；
S02, laser beam is adjusted：Laser beam 9 is generated using ultrafast laser 1, and adjusts the wave band of laser beam 9, output work
Rate and repetition rate；
S03, processing：The laser beam 9 that ultrafast laser 1 emits penetrates optic delivery systems 2 and galvanometer scanning system 3, gathers
After at contact surface between sheet glass 7 on coke to workbench 5 and silicon chip 8, focal position is adjusted by workbench 5, in conjunction with sharp
Wave band, output power and the repetition rate of light beam 9 adjust sweep speed by galvanometer scanning system 3, are welded to sample to be welded
It connects.
Wherein, S01 is pre-processed：Optical contact processing is carried out, specific implementation process is：Take common soda lime glass
It with common monocrystalline silicon piece 8, is cleaned 10 minutes with supersonic wave cleaning machine, the squeezed tight sample 20-30 to be welded after nitrogen dries up
Minute, the contact surface of sheet glass 7 and silicon chip 8 is observed through sheet glass 7, if contact surface between the two is reached without interference fringe
To welding requirements, sample can be packed into welding fixture 4 and prepare welding.
The present embodiment is equally applicable to other types or the style to be welded of thickness, such as sheet glass 7 is low alkali borosilicic acid
Salt glass, rear-earth-doped borosilicate glass etc..
S02 adjusts light beam：The maximum average power of ultrafast laser 1 is 50W, and exportable wave band is 515-1064nm, arteries and veins
Width is 15ps-300fs, repetition rate 90kHz-1000kHz.
By adjusting the distance of the condenser lens and processing platform of galvanometer scanning system 3, realize in the boundary of sample to be welded
Place carries out laser focusing, and can neatly change focal position.Because the upper layer of sample is transparent glass, it is possible to
Realize that the intersection in the two focuses minimum light spot ideally.
S03 is processed：The laser beam 9 emitted using ultrafast laser 1 takes slow cabling by galvanometer scanning system 3
Processing method is welded, and sweep speed is adjustable.
Welding can be achieved in 0.1mm/s -20mm/s in the focal beam spot Trace speed of the present embodiment.
The correlation analysis and conclusion obtained after the sheet glass 7 of the present embodiment and 8 welding processing of silicon chip is as follows：
1) it is found by analysis, the absorption peak of the Raman spectrum of silicon materials is 520nm, and the laser action of this wave band is in silicon
It will produce stronger temperature field on piece 8, be easier to make silicon materials that molten condition is presented, can generate less dust and slag, and glass
By ultrafast laser effect Nonlinear optical absorption can be occurred for glass material, the phenomenon that generating photoionization, melting, solidify.And it examines
Consider it is in finished product in use, in order to avoid introduce secondary pollution, to avoid generating in the welding process of laser more
Dust and slag, and the heat affecting effect range for making the base material on weld seam periphery be excited light action generation is as small as possible.It is ultrafast to swash
The laser beam 9 that light device 1 emits is used for the welding procedure of glass and silicon chip 8, can meet these requirements, and process letter
List, precision are high, efficient, pollution-free, and damage is hardly brought to the electronic component in encapsulation, have very big
Application value.
By being found after a series of tests：515nm-1064nm wave bands, 5w-50w power, the laser of 15ps-300fs pulsewidths
It is preferable for the welding effect of glass and silicon chip 8, it can get best welding effect by adjusting technological parameter.
2) in laser beam welding, within the scope of effective process velocity, the temperature of process velocity and material internal at
Inverse ratio, and the temperature of pool depth and material internal is proportional, therefore the weld seam pool depth of process velocity and material
It is inversely proportional.Process velocity generates certain influence to the width of weld seam and the distribution density of melt substance again, influences weld seam indirectly
Mechanical performance.Therefore, can according to different processed and applied fields for the width of weld seam and the different demands of mechanical performance,
Suitable process velocity is chosen, while adjusting wave band, power, repetition rate and the defocusing amount of laser beam 9, realizes machined parameters
Personalized customization.
To obtain preferable welding effect, the processing method of linear array is slowly walked using galvanometer scanning system 3, is made full use of super
The fast big repetition rate of laser 1 and peak power are, it can be achieved that preferable welding effect, reaches preferable weld strength and sealing
Property.It is found by testing：When the Trace speed of galvanometer scanning system 3 is 0.1mm/s -20mm/s, welding effect is best.
The present invention realizes the direct welding without adding solder of sheet glass 7 and silicon chip 8, phase by ultrafast pulsed laser
Technique for sticking pair with traditional glass and silicon chip 8, realizes the saving of cost, avoids the dirt of coating and solder to material
Dye, avoids the secondary pollution by solder or adhesive during finished product use.Only needed in preprocessing process into
The processing of row optical contact, in contrast to existing method for local bonding silicon/glass by laser, whole process is simplified, processing
Efficiency is improved, and without using cleaning solution, activating solution with pollution, avoids causing electronic component to be packaged
Pollution and damage, meet the requirement of environmental protection.
The processing method of linear array is slowly walked using galvanometer scanning system 3, controls pulse delay time so that material stimulated light
The region of effect obtains localized hyperthermia, obtains deeper molten bath, the weld strength of strengthening material, so as to realize preferable glass
Glass and 8 stitch welding effect of silicon chip, and ultrafast laser can realize cold working, the periphery of weld seam generate smaller residual stress with
Temperature gradient is distributed, and avoids causing to damage to electronic component to be packaged.Can by adjust laser wavelength, output power,
The technological parameters such as repetition rate and sweep speed and focal position, obtain different weld strengths and weld width, for not
With the different application demand in application field, personalized process parameters design is realized.
Pre-treatment step used in the embodiment of the present invention includes cleaning, drying and squeezes, and passes through cleaning, drying and extruding
Processing, can be such that the air between glass and silicon excludes as far as possible.
Specific embodiment described herein is only an example for the spirit of the invention.Technology belonging to the present invention is led
The technical staff in domain can make various modifications or additions to the described embodiments or replace by a similar method
In generation, however, it does not deviate from the spirit of the invention or beyond the scope of the appended claims.
Claims (7)
1. a kind of ultrafast laser welder, which is characterized in that including ultrafast laser (1), optic delivery systems (2), galvanometer
Scanning system (3), workbench (5) and for by the fixed welding fixture of sample to be welded (4), the optic delivery systems (2) to be used
In laser beam (9) conduction for emitting the laser to the galvanometer scanning system (3), the workbench (5) is located at described
The lower section of galvanometer scanning system (3), the welding fixture (4) are fixed on workbench (5).
2. a kind of ultrafast laser welder according to claim 1, which is characterized in that the welding fixture (4) includes
Ontology offers the accommodating chamber for placing sample to be welded on the ontology, if being threaded on the roof of the accommodating chamber
The screw rod of bolt stem (6), each bolt (6) can extend in the accommodating chamber.
3. a kind of ultrafast laser welding method using any one of the claim 1-2 ultrafast laser welders, feature
It is, includes the following steps：
S01, pretreatment：Optical contact processing is carried out to sample to be welded, sheet glass (7) and silicon chip (8) is made to fit closely, eliminates glass
The air of contact surface between glass piece (7) and silicon chip (8) makes the contact surface between sheet glass (7) and silicon chip (8) without interference item
Line；
S02, laser beam (9) is adjusted：Ultrafast laser beam (9) is generated using ultrafast laser (1), and adjusts ultrafast laser beam (9)
Wave band, output power and repetition rate；
S03, processing：The laser beam (9) of ultrafast laser (1) transmitting penetrates optic delivery systems (2), galvanometer scanning system (3),
After focusing at the contact surface between the sheet glass (7) on workbench (5) and silicon chip (8), is adjusted by workbench (5) and focus position
It sets, in conjunction with the wave band, output power and repetition rate of laser beam (9), sweep speed is adjusted by galvanometer scanning system (3), it is right
Sample to be welded is welded.
4. ultrafast laser welding method according to claim 3, which is characterized in that the sample to be welded is sheet glass (7)
With silicon chip (8), the sheet glass (7) is soda lime glass piece (7), and the thickness of the sheet glass (7) is 0.3mm-
The thickness of 1.5mm, the silicon chip (8) are 0.7mm -2.0mm.
5. ultrafast laser welding method according to claim 3, which is characterized in that the optical contact processing includes as follows
Step：Cleaning, drying and squeeze, it is described cleaning for using ultrasonic cleaner to sample clean 5-10 minutes to be welded, it is described to blow
It does directly to be dried up using nitrogen, it is described to squeeze as to sample extrusion to be welded 20-30 minutes.
6. ultrafast laser welding method according to claim 3, which is characterized in that the power of the ultrafast laser (1)
Wavelength for 5-50W, the laser beam (9) of ultrafast laser (1) transmitting is 515nm-1064nm, pulsewidth 15ps-300fs, weight
Complex frequency is 90kHz-1MHz.
7. ultrafast laser welding method according to claim 3, which is characterized in that the galvanometer scanning system (3) uses
The mode that focal beam spot slowly walks linear array is processed, and the Trace speed of galvanometer scanning system (3) is 0.1mm/s-20mm/s.
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| CN109702343A (en) * | 2019-01-22 | 2019-05-03 | 华南师范大学 | The controllable laser compound welding device and method of the transparency of a kind of pair of glass |
| CN109909610A (en) * | 2018-12-14 | 2019-06-21 | 华南师范大学 | A kind of welding method and welding system of silicon wafer and glass |
| CN110422993A (en) * | 2019-07-03 | 2019-11-08 | 大族激光科技产业集团股份有限公司 | Method for laser welding and device |
| CN110655307A (en) * | 2019-11-07 | 2020-01-07 | 武汉华工激光工程有限责任公司 | Ultrafast laser welding device and process method for realizing glass packaging |
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| CN112846499A (en) * | 2020-12-29 | 2021-05-28 | 武汉华工激光工程有限责任公司 | Ultrafast laser welding method and system for glass and metal packaging |
| CN112894139A (en) * | 2019-12-03 | 2021-06-04 | 大族激光科技产业集团股份有限公司 | Ultrafast laser glass welding method |
| CN113387601A (en) * | 2021-05-31 | 2021-09-14 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Method for improving glass welding strength with assistance of high-vacuum magnetron sputtering interface |
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