CN108630628A - 封装结构 - Google Patents

封装结构 Download PDF

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Publication number
CN108630628A
CN108630628A CN201710718432.XA CN201710718432A CN108630628A CN 108630628 A CN108630628 A CN 108630628A CN 201710718432 A CN201710718432 A CN 201710718432A CN 108630628 A CN108630628 A CN 108630628A
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CN
China
Prior art keywords
pattern
tube core
perforation
antenna
molding compounds
Prior art date
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Pending
Application number
CN201710718432.XA
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English (en)
Inventor
江永平
史朝文
萧闵谦
吴念芳
张守仁
江佾澈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of CN108630628A publication Critical patent/CN108630628A/zh
Pending legal-status Critical Current

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Abstract

本公开提供一种封装结构，所述封装结构包括：管芯；第一模塑化合物，包封所述管芯；天线结构；以及反射器图案，设置在所述管芯之上。穿透所述第一模塑化合物的穿孔设置在所述管芯周围。所述反射器图案设置在所述管芯及所述穿孔上。所述天线结构设置在所述反射器图案上且与所述反射器图案及所述管芯电连接。所述天线结构被设置在所述反射器图案上的第二模塑化合物包覆。

Description

封装结构
相关申请的交叉参考
本申请主张在2017年3月20日提出申请的序列号为第62/474,021号的美国临时申请的优先权权利。上述专利申请的全文并入本文供参考且构成本说明书的一部分。
技术领域
本发明实施例涉及封装结构以及封装结构的制造方法。
背景技术
用于各种电子应用(例如，手机及其他移动电子设备)中的许多半导体装置及集成电路是在单个半导体晶片上制造而成。可在晶片级上对晶片的管芯进行加工及封装，且已研发出各种技术用于晶片级封装。
发明内容
本发明实施例提供一种封装结构。所述封装结构包括：管芯；第一模塑化合物，环绕所述管芯；以及穿孔，设置在所述管芯旁边且围绕所述管芯，并穿透所述第一模塑化合物。反射器图案设置在所述管芯及所述穿孔上。所述反射器图案电连接到所述穿孔。天线结构设置在所述反射器图案上且与所述反射器图案及所述管芯电连接。第二模塑化合物设置在所述反射器图案上且环绕所述天线结构。
附图说明
结合附图阅读以下详细说明，会最好地理解本公开的各个方面。应注意，根据本行业中的标准惯例，各种特征并非按比例绘制。事实上，为论述清晰起见，可任意增大或减小各种特征的尺寸。
图1是示出根据本公开一些实施例制作封装结构的方法的工艺步骤的示例性流程图。
图2A至图2J是示出根据本公开的一些实施例，封装结构在制作封装结构的方法的的各个阶段处的示意性剖视图。
图3是示出根据本公开一些实施例的封装结构的示意性剖视图。
图4A及图4C是示出根据本公开一些实施例的封装结构的一些部分的示例性布局的示例性俯视图。
图4B是示出根据本公开一些实施例的封装结构的一些部分的示例性布局的示例性三维图。
具体实施方式
以下公开内容提供用于实作所提供主题的不同特征的许多不同的实施例或实例。以下阐述组件及构造的具体实例以简化本公开内容。当然，这些仅为实例且不旨在进行限制。例如，以下说明中将第一特征形成在第二特征“之上”或第二特征“上”可包括其中第一特征及第二特征被形成为直接接触的实施例，且也可包括其中第一特征与第二特征之间可形成有附加特征、进而使得所述第一特征与所述第二特征可能不直接接触的实施例。另外，本公开内容可能在各种实例中重复使用参考编号及/或字母。这种重复使用是出于简洁及清晰的目的，而不是自身表示所论述的各种实施例及/或配置之间的关系。
此外，为易于说明，本文中可能使用例如“之下(beneath)”、“下面 (below)”、“下部的(lower)”、“之上(above)”、“上部的(upper)”等空间相对性用语来阐述图中所示的一个元件或特征与另一(其他)元件或特征的关系。所述空间相对性用语旨在除图中所绘示的取向外还囊括装置在使用或操作中的不同取向。装置可具有其他取向(旋转90度或其他取向)，且本文中所用的空间相对性用语可同样相应地进行解释。
上述内容还可包括其他特征及工艺。举例来说，可包括测试结构以帮助进行三维(3D)封装或三维集成电路(3DIC)装置的验证测试。测试结构可包括例如形成于重布线层中或衬底上的测试垫，所述测试垫使得能够测试3D封装或3DIC、使用探针(probe)及/或探针卡(probe card)等。可对中间结构及最终结构执行验证测试。另外，本文中所公开的结构及方法可结合包含对已知良好管芯的中间验证的测试方法论一起使用，以提高产量(yield)及降低成本。
图1是示出根据本公开一些实施例制作封装结构的方法的工艺步骤的示例性流程图。图1所示工艺流程的各种工艺步骤可包括如以下所论述的多个工艺步骤。图2A至图2J是示出根据本公开的一些实施例，封装结构在制作封装结构的方法的的各个阶段处的示意性剖视图。应注意，本文中所述的工艺步骤涵盖用于制作封装结构的制造工艺的一部分。所述实施例旨在提供进一步阐释，而不是用于限制本公开的范围。
根据一些实施例，参照图1中的步骤S100且如图2A所示，提供载体 102。在一些实施例中，载体102可以是玻璃载体或任何适合于封装结构的制造方法的载体。在一些实施例中，载体102设置有剥离层103及形成于剥离层103上的缓冲层104。在一些实施例中，剥离层103充当适合于使载体102与设置在载体102上的上方层结合/剥离的临时结合层。在一些实施例中，聚合物层103可包括释放层(例如，光热转换(light-to-heat conversion， LTHC)层)以及粘合层(例如，紫外线固化型粘合剂或热固化型粘合剂层)。参照图2A，在一些实施例中，缓冲层104包括由介电材料制成的介电层，所述介电材料包含聚酰亚胺、苯并环丁烯(“BCB”)、聚苯并恶唑(“PBO”) 或任意其他适当的聚合物系介电材料。在某些实施例中，在缓冲层104上且在剥离层103及载体102上方形成第一金属图案110。在示例性实施例中，第一金属图案110是通过以下方式形成：通过电镀或沉积在载体102 上方形成第一金属化层(图中未示出)，然后通过光刻及蚀刻工艺对所述金属化层进行图案化。在一些实施例中，第一金属化层的材料包含铝、钛、铜、镍、钨及/或其合金。
在一些实施例中，第一金属图案110至少包括多个天线图案AP。在某些实施例中，天线图案AP被排列成阵列，例如N×N阵列或N×M阵列 (N、M>0)。图4A是示例性俯视图，其示出在根据本公开一些实施例的封装结构的第一金属图案中的天线图案AP是示例性布局。如图3所示，在一些实施例中，缓冲层104上的天线图案AP被示出为排列成4×6阵列的方形金属性区块。
参照图2B且在图1中所示的步骤S102中，在一些实施例中，在载体 102上方的第一金属图案110的天线图案AP上形成层间穿孔(through interlayer vias，TIV)120。在某些实施例中，除了形成在天线图案AP上的层间穿孔120以外，还可在缓冲层104上形成一个或多个层间穿孔120。在一些实施例中，层间穿孔120形成在天线图案AP上并实体连接到天线图案 AP。在一些实施例中，天线结构125包括天线图案AP。在一些实施例中，天线图案AP与连接到天线图案AP的层间穿孔120构成天线结构125。在一些实施例中，形成层间穿孔120包括：形成具有开口的掩模图案(图中未示出)，然后通过电镀或沉积形成填满所述开口的金属性材料(图中未示出)，并移除掩模图案以形成层间穿孔120。层间穿孔120的材料可包括铜、铜合金、镍、钨或其他适当的金属材料。然而，应理解，本公开内容的范围并不仅限于以上所公开的材料及说明。
在一些实施例中，层间穿孔120以特定的相应排列形式形成在天线图案AP上。图4B是示例性三维图，其示出根据本公开一些实施例的封装结构的天线图案AP的示例性布局以及连接到天线图案AP的层间穿孔120的相应布局。如图4B所示，在一些实施例中，天线图案AP是排列成4×6 阵列(行×列)的金属性区块，且所述金属区块中的每一个以一一对应的关系连接到层间穿孔120中的一个。在某些实施例中，成对的天线图案AP与层间穿孔120构成排列成4×3阵列的偶极天线(dipole antennas)DA。在某些实施例中，偶极天线DA的阵列可构成阵列天线。在一个实施例中，两个金属区块(天线图案AP)充当偶极天线DA的导电元件，且层间穿孔120 充当分别连接到偶极天线DA的两个导电元件的馈送线(feedlines)。然而应理解，天线图案及层间穿孔的布局及排列形式可根据产品的设计或电性质要求而变化，且本公开内容的范围并不仅限于以上所公开的实例及说明。
参照图2C且在图1所示的步骤S104中，在一些实施例中，在载体 102上方、缓冲层104上的第一金属图案110上方以及位于载体102上方的层间穿孔120上方形成第一模塑化合物130。在一些实施例中，第一模塑化合物130覆盖缓冲层104、第一金属图案110，并填充在层间穿孔120之间。在某些实施例中，第一模塑化合物130实质上包封层间穿孔120，但暴露出层间穿孔120的顶表面120a。在一些实施例中，所形成的模塑化合物130 完全包封层间穿孔120，且然后执行平坦化工艺以局部地移除第一模塑化合物130，从而暴露出层间穿孔120的顶表面120a。也就是说，第一模塑化合物130的表面130a是平面的且与层间穿孔120的顶表面120a齐平。
在一些实施例中，第一模塑化合物130形成在缓冲层104上并覆盖第一金属图案110及层间穿孔120。在一些实施例中，模塑化合物130包含例如环氧树脂或任意其他适当类型的模制材料。在一些实施例中，模塑化合物130的材料具有低介电常数(Dk)性质及低损耗正切常数(Df)性质。根据高速度应用的频率范围，可基于封装所需的介电性质选择模塑化合物的适当材料。在一些实施例中，对于高频率应用，在10GHz下测量时，模塑化合物130的材料可具有介电常数值低于4.0的低介电常数(Dk)及损耗正切常数值低于0.01的低损耗正切常数(Df)。在一些实施例中，模塑化合物130包封层间穿孔120(其顶表面120a被暴露出)且具有高度h(从模塑化合物130的顶表面130a到缓冲层104的顶表面)。
参照图2D且在图1所示的步骤S106中，在一些实施例中，在模塑化合物130上以及层间穿孔120上形成重布线结构140。在一些实施例中，形成重布线结构140可包括在介电层142内形成第二金属图案145。在一些实施例中，形成重布线结构140包括：形成介电材料层(图中未示出)，然后对所述介电材料层进行图案化以形成具有开口的介电层142。在一些实施例中，介电材料层的材料包含聚酰亚胺、苯并环丁烯或聚苯并恶唑。此后，在所述开口内形成第二金属化层(图中未示出)并使所述第二金属化层填满所述开口，且然后将所述第二金属化层图案化到第二金属图案145。在一些实施例中，第二金属化层的材料包含铝、钛、铜、镍、钨及/或其合金。在一些实施例中，第二金属图案145电连接到层间穿孔120。
在一些实施例中，第二金属图案145包括至少布线图案(routing pattern) RL及反射器图案RP。在一些实施例中，布线图案RL包括布线线路及/或接触位于上方的层及位于下方的层或辅助与位于上方的层及位于下方的层的电连接。在某些实施例中，反射器图案RP包括排列成阵列(例如，N×N 阵列或N×M阵列(N、M>0))的多个子图案RP1。图4C是示例性俯视图，其示出根据本公开一些实施例的封装结构的反射器图案RP的子图案 RP1的示例性布局。如图4C所示，在一些实施例中，子图案RP1中的每一个被成形为一种类型的平面方形开口环谐振器(split ring resonator，SRR)，所述平面方形SRR具有在四个角处具有空隙(开口)的带外框的十字形物 (framed cross)。作为另外一种选择，在一些实施例中，子图案RP1可被成形为圆形SRR、方形SRR、互补方形SRR或互补圆形SRR。在图4C中，在一个实施例中，子图案RP1是排列成4×4阵列的电磁带隙 (electromagnetic band-gap，EBG)结构。在一些实施例中，子图案RP1的位置与对应偶极天线DA的位置对齐或对应于天线图案AP的位置。在一些实施例中，子图案RP1的位置未必与对应偶极天线DA的位置对齐或不需要对应于天线图案AP的位置。在一些实施例中，反射器图案RP也可充当天线图案AP的接地平面。归功于天线图案及反射器图案的布局以及天线结构与反射器图案封装在一起的构造，随后获得的封装变得相当致密。然而应理解，天线图案及子图案的布局及排列形式可根据产品的设计或电性质要求而变化，且本公开内容的范围并不仅限于以上所公开的实例及说明。
在一些实施例中，反射器图案RP充当天线结构125(由DA构成)的反射器。通过使用电磁带隙(EBG)结构作为高阻抗反射器，可显著减小天线与接地平面(反射器图案)之间所需的最小距离，且可获得高的增益性能增强(gain performance enhancement)。也就是说，模塑化合物130的高度h可比0.25λ(λ是待由天线接收或发射的电磁波的波长)小得多，且高度h可小至约0.01λ。以高速度无线宽带通信技术为例，可应用于移动及无线网络上的服务的毫米波具有介于10毫米至1毫米范围内的短波长。在此种情形中，对于60GHz至77GHz应用，所需要的高度h可小至约40 微米。
参照图2E且在图1所示的步骤S108中，提供至少一个管芯150，且在重布线结构140上形成多个穿孔160。在图2E中，出于说明性目的，仅呈现了一个管芯且仅呈现了两个穿孔，然而应注意，可提供一个或多个管芯且可形成多于两个穿孔。本文中所述的管芯可被称为芯片或集成电路 (integrated circuit，IC)。在一些实施例中，管芯150具有钝化层152及形成于其上面的多个导电垫154。在一个实施例中，钝化层152覆盖管芯150 的有源表面150a，但暴露出导电垫154，以用于进一步的电连接。在一个实施例中，可在重布线结构140与放置在重布线结构140上的管芯150之间设置管芯贴合膜151。在一些实施例中，管芯150包括至少一个无线射频 (radio frequency，RF)芯片。在一些实施例中，管芯150可进一步包括相同类型或不同类型的额外芯片。在替代实施例中，设置多于一个管芯150，且管芯150除包括至少一个无线射频芯片以外还可包括相同类型或不同类型的选自以下的芯片：数字芯片、模拟芯片或混合式信号芯片、应用专用集成电路(application-specificintegrated circuit，ASIC)芯片、传感器芯片、存储器芯片、逻辑芯片或调压器芯片。
如图2E所示，在一些实施例中，穿孔160是形成在位于第一模塑化合物130之上的第二金属图案145上的集成扇出式(integrated fan-out，InFO) 穿孔。在一些实施例中，穿孔160实体连接到第二金属图案145，且电连接到天线结构125(至少电连接到天线图案AP及层间穿孔120)。在一些实施例中，穿孔160排列在管芯150旁边且环绕管芯150。在一些实施例中，形成穿孔160包括：形成具有开口的掩模图案(图中未示出)，然后通过电镀或沉积形成填满所述开口的金属性材料(图中未示出)，并移除所述掩模图案以形成穿孔160。穿孔160的材料可包含铜、铜合金、镍、钨或其他适当的金属材料。然而应理解，本公开内容的范围并不仅限于以上所公开的材料及说明。
参照图2F及在图1所示的步骤S110中，在一些实施例中，在重布线结构140之上形成覆盖第二金属图案145并填充在穿孔160与管芯150之间的第二模塑化合物170。在一些实施例中，第二模塑化合物170覆盖并包封管芯150及穿孔160，但暴露出穿孔160的顶表面160a及管芯150的有源表面150a上的导电垫154。在一些实施例中，所形成的第二模塑化合物 170完全包封管芯150及穿孔160，且然后执行平坦化工艺以局部地移除第二模塑化合物170，从而暴露出穿孔160的顶表面160a及导电垫154。也就是说，第二模塑化合物170的顶表面170a与穿孔160的顶表面160a齐平且共面。在一些实施例中，第二模塑化合物170包含例如环氧树脂或任意其他适当类型的模制材料。
参照图2G且在图1所示的步骤S112中，在一些实施例中，在第二模塑化合物170上形成覆盖穿孔160及管芯150的重布线结构180。重布线结构180与管芯150及穿孔160电连接，且经由重布线结构140及穿孔160 电连接到天线结构125。形成重布线结构180包括交替地依序形成一个或多个聚合物介电材料层及一个或多个金属化层。在一些实施例中，金属化层的材料包含铝、钛、铜、镍、钨及/或其合金。在一些实施例中，聚合物介电材料层的材料包含聚酰亚胺、苯并环丁烯、聚苯并恶唑或任意其他适当的聚合物系介电材料。在一些实施例中，重布线结构180包括：前侧重布线层，具有实体连接到并电连接到管芯150的导电垫154以及穿孔160的底部金属化层182；以及凸块下金属(under bump metal，UBM)层184，用于辅助球安装。在一些实施例中，凸块下金属层184的材料包含铜、镍、铝、钨或其合金。在某些实施例中，重布线结构180延伸超过管芯的跨度范围，且可被视为扇出式重布线结构。应注意，重布线结构180并不仅限于如图2G所示包括两个介电层及/或两个金属化层。
参照图2H且在图1所示的步骤S114中，在一些实施例中，在重布线结构180上形成多个焊料球200。在一个实施例中，焊料球200设置在凸块下金属层184上。在一些实施例中，焊料球200中的一些电连接到管芯150，且焊料球200中的一些经由重布线结构180、穿孔160以及重布线结构140 而电连接到天线结构125。在一些实施例中，焊料球200经由焊剂贴合到凸块下金属层184。
参照图2H，在重布线结构180上设置一个或多个集成无源装置 (integratedpassive device，IPD)210。出于说明性目的，在图2H中仅存在两个IPD 210，但待安装在重布线结构上的IPD 210的数目并不特别限制于所述实施例，且可基于设计要求变化。在一些实施例中，IPD 210是例如电容器、电阻器及/或电感器等。
在一些实施例中，焊料球200邻近IPD 210设置。在某些实施例中，焊料球200排列在与穿孔160的位置对应的位置处。在某些实施例中，焊料球200排列成环绕IPD 210。在某些实施例中，在将IPD 210设置在重布线结构180上之前或之后，将焊料球200设置在重布线结构180上。
参照图2I且在图1所示的步骤S116中，将包括第一金属图案110、层间穿孔120、第一模塑化合物130、重布线结构140、管芯150、穿孔160、第二模塑化合物170以及重布线结构180的整个封装10上下倒置并设置在载体膜300上。
在一些实施例中，如图2J所示且在图1所示的步骤S118中，移除载体102并执行切割工艺。在一些实施例中，封装10通过剥离工艺从载体102 分离，并移除载体102及剥离层103。由于封装10从载体102分开，因此缓冲层104被暴露出。在一些实施例中，缓冲层104保持位于天线结构125 上作为保护层。作为另外一种选择，在一些实施例中，可随后移除缓冲层 104。在一些实施例中，执行切割工艺以沿分割线(在图中示出为虚线)将整个封装结构10分割(至少贯穿第一模塑化合物130及第二模塑化合物170 进行分割)成各个分开的半导体封装100(在图中仅示出了一个半导体封装 100)。在一个实施例中，所述切割工艺是包括机械刀锯切(mechanical blade sawing)或激光分割的晶片切割工艺。
图3是示出根据本公开一些实施例的封装结构的示意性剖视图。封装结构30至少包括第一金属图案110、层间穿孔120、第一模塑化合物130、重布线结构140、管芯150、穿孔160、第二模塑化合物170以及重布线结构180。
在图3中，阐述了类似于如图2J中所示结构的半导体封装30，只是半导体封装30包括两个管芯150且省略了缓冲层104。参照图3，在示例性实施例中，半导体封装300包括重布线结构180、设置在重布线结构180上的管芯150、设置在重布线结构180上且包封管芯150的模塑化合物170以及设置在重布线结构180上并穿透模塑化合物170的穿孔160。在一些实施例中，管芯150中的至少一个是无线射频(RF)芯片。在一些实施例中，焊料球200安装在重布线结构180上，且焊料球200中的一些经由重布线结构180电连接到管芯150。此外，在一些实施例中，焊料球200中的一些经由重布线结构180及穿孔160电连接到天线结构125。在某些实施例中，一个或多个IPD 210安装在重布线结构180上。在一些实施例中，包括反射器图案RP的重布线结构140位于模塑化合物170上。在一些实施例中，穿孔160排列在管芯150旁边并环绕管芯150，且穿孔160电连接重布线结构 140与重布线结构180。在某些实施例中，重布线结构140的反射器图案 RP包括排列成阵列的多个子图案RP1。在一些实施例中，子图案RP1可被成形为一种或多种类型的方形开口环谐振器(SRR)、圆形SRR、互补方形 SRR及互补圆形SRR。在一个实施例中，子图案RP1可被成形为在四个角处具有空隙(开口)的带外框的平面十字形物。
在图3中，另一模塑化合物130及天线结构125设置在重布线结构140 上并位于管芯150及模塑化合物170之上。在一些实施例中，天线结构125 包括被模塑化合物130包封的偶极天线DA。在某些实施例中，偶极天线 DA由层间穿孔120及连接到层间穿孔120的天线图案AP构成。在一些实施例中，天线图案AP的顶表面从模塑化合物130暴露出(不被模塑化合物 130覆盖)。在某些实施例中，天线图案AP的顶表面与模塑化合物130的顶表面共面且处于同一水平面，如图3所示。在一些实施例中，天线图案 AP是被排列成阵列的金属性区块。在某些实施例中，天线图案AP以特定关系连接到层间穿孔120。在某些实施例中，成对的天线图案AP与层间穿孔120构成排列成阵列的偶极天线DA。在某些实施例中，偶极天线DA的阵列可构成阵列天线结构。
根据本公开内容的一些实施例，与排列在同一水平面上但位于封装管芯周围的天线及/或无源组件的面积消耗型(area-consuming)排列形式相比，直接安置在管芯之上且整合到封装结构中的天线仅占据少量的占地面积(footprint area)，从而提供占地面积小且致密的封装结构。此外，排列在管芯正上方且并入后侧重布线层中的反射器图案进一步减小封装结构的高度(或厚度)并改善封装的增益性能。在本公开内容中所公开的此种封装结构设计中，天线结构及/或反射器经由重布线层、穿孔及/或重布线结构电连接到位于下方的管芯，因此以短的电路径提供更好的电性能。
在本公开内容的一些实施例中，提供一种封装结构。所述封装结构包括：管芯；第一模塑化合物，环绕所述管芯；以及穿孔，设置在所述管芯旁边且围绕所述管芯，并穿透所述第一模塑化合物。反射器图案设置在所述管芯及所述穿孔上。所述反射器图案电连接到所述穿孔。天线结构设置在所述反射器图案上且与所述反射器图案及所述管芯电连接。第二模塑化合物设置在所述反射器图案上且环绕所述天线结构。
根据本公开内容的一些实施例，所述管芯包括至少一个无线射频芯片。
根据本公开内容的一些实施例，所述天线结构包括天线图案及连接到所述天线图案的层间穿孔，所述天线图案是被排列成阵列的金属区块，且成对的所述金属区块与连接到所述金属区块的所述层间穿孔构成偶极天线。
根据本公开内容的一些实施例，所述反射器图案包括被排列成阵列的子图案，且所述天线结构电连接到所述反射器图案。根据本公开内容的一些实施例，所述子图案被成形为开口环谐振器。
根据本公开内容的一些实施例，所述天线图案的顶表面从所述第二模塑化合物暴露出。
在本公开内容的一些实施例中，提供一种封装结构。所述封装结构包括至少一个管芯；第一模塑化合物，环绕所述至少一个管芯；以及穿孔，设置在所述至少一个管芯周围且穿透所述第一模塑化合物。重布线层设置在所述第一模塑化合物及所述至少一个管芯上。所述重布线层包括反射器图案，所述反射器图案设置在所述至少一个管芯上且电连接到所述穿孔。天线结构设置在所述反射器图案上。第二模塑化合物设置在所述反射器图案上且环绕所述天线结构。
根据本公开内容的一些实施例，所述结构进一步包括设置在所述第一模塑化合物上的重布线结构及设置在所述重布线结构上的焊料球，其中所述重布线结构电连接到所述至少一个管芯及所述穿孔，且所述焊料球电连接到所述至少一个管芯及所述天线结构。
根据本公开内容的一些实施例，所述至少一个管芯包括无线射频芯片，所述天线结构包括天线图案，所述天线图案被排列成阵列且所述天线结构是阵列天线结构。
根据本公开内容的一些实施例，所述至少一个管芯包括无线射频芯片，所述天线结构包括天线图案及连接到所述天线图案的层间穿孔，所述天线图案是被排列成阵列的金属区块，且所述层间穿孔以一一对应的关系分别连接到所述金属区块。
根据本公开内容的一些实施例，所述至少一个管芯包括无线射频芯片，所述天线结构包括天线图案及连接到所述天线图案的层间穿孔，且成对的所述天线图案与所述层间穿孔构成偶极天线。
根据本公开内容的一些实施例，所述至少一个管芯包括无线射频芯片，所述反射器图案包括被排列成阵列的子图案，且所述子图案被成形为开口环谐振器。
根据本公开内容的一些实施例，所述天线结构电连接到所述至少一个管芯且所述反射器图案与所述天线结构电连接。
在本公开内容的一些实施例中，阐述一种制作封装结构的方法。在载体上形成具有多个天线图案的第一金属图案。在所述第一金属图案的所述多个天线图案上形成层间穿孔(TIV)。在所述第一金属图案上形成第一模塑化合物且使所述第一模塑化合物覆盖所述层间穿孔。在所述第一模塑化合物上及所述层间穿孔上形成包括反射器图案的重布线层。在所述重布线层上形成穿孔以及在所述重布线层上设置管芯。在所述重布线层上形成第二模塑化合物，以包封所述管芯及所述穿孔。
根据本公开内容的一些实施例，所述方法进一步包括在所述第二模塑化合物上及在所述穿孔上形成重布线结构，并在所述重布线结构上设置多个焊料球。根据本公开内容的一些实施例，所述方法进一步包括在所述重布线结构上设置一个或多个集成无源装置。根据本公开内容的一些实施例，所述方法进一步包括：在设置所述多个焊料球并分离所述载体之后执行切割工艺。
根据本公开内容的一些实施例，所述天线结构被形成为金属区块，所述金属区块被排列成阵列，且所述层间穿孔被形成且以一一对应的关系连接到所述金属区块。
根据本公开内容的一些实施例，所述天线图案形成在所述层间穿孔上且连接到所述层间穿孔，且成对的所述天线图案与所述层间穿孔构成偶极天线。
根据本公开内容的一些实施例，所述反射器图案被形成为子图案，所述子图案被排列成阵列，且所述子图案中的每一个被形成为开口环形状。
以上概述了若干实施例的特征，以使所属领域中的技术人员可更好地理解本发明的各个方面。所属领域中的技术人员应知，其可容易地使用本发明作为设计或修改其他工艺及结构的基础来施行与本文中所介绍的实施例相同的目的及/或实现与本文中所介绍的实施例相同的优点。所属领域中的技术人员还应认识到，这些等效构造并不背离本发明的精神及范围，而且他们可在不背离本发明的精神及范围的条件下对其作出各种改变、代替及变更。

Claims (1)

1.一种封装结构，其特征在于，包括：
管芯；
第一模塑化合物，环绕所述管芯；
穿孔，设置在所述管芯旁边且围绕所述管芯，并穿透所述第一模塑化合物；
反射器图案，设置在所述管芯及所述穿孔上，其中所述反射器图案电连接到所述穿孔；
天线结构，设置在所述反射器图案上且与所述反射器图案及所述管芯电连接；以及
第二模塑化合物，设置在所述反射器图案上且环绕所述天线结构。
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