CN108593734A - A kind of manufacturing method of sensor element - Google Patents

A kind of manufacturing method of sensor element Download PDF

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Publication number
CN108593734A
CN108593734A CN201810304257.4A CN201810304257A CN108593734A CN 108593734 A CN108593734 A CN 108593734A CN 201810304257 A CN201810304257 A CN 201810304257A CN 108593734 A CN108593734 A CN 108593734A
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CN
China
Prior art keywords
manufacturing
cover plate
technique
sensor element
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810304257.4A
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Chinese (zh)
Inventor
张晓民
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Autonic Ltd By Share Ltd
Original Assignee
Jiangsu Autonic Ltd By Share Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Autonic Ltd By Share Ltd filed Critical Jiangsu Autonic Ltd By Share Ltd
Priority to CN201810304257.4A priority Critical patent/CN108593734A/en
Publication of CN108593734A publication Critical patent/CN108593734A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28Electrolytic cell components
    • G01N27/30Electrodes, e.g. test electrodes; Half-cells
    • G01N27/308Electrodes, e.g. test electrodes; Half-cells at least partially made of carbon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/05Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

The invention discloses a kind of manufacturing method of sensor element, manufacturing method includes the following steps:Select the cover plate of the insulating materials properties such as polyvinyl chloride, polypropylene, makrolon and acrylic resin, the electrode sensing plate that surface is coated with to the electrode slurrys such as silver paste or silver-colored palladium slurry is fixed on by the technique of matrix printing among cover plate and piezoelectric substrate, to form electrodes conduct band;Graphene is shifted to target substrate surface, metal grid electrode pattern is made on target substrate surface, using this preparation method, the bottleneck that ion beam etch process will not be used technique, reduce equipment investment, and more importantly technique greatly simplifies, greatly reduces the flow time, preferable magneto-resistive layer surface topography is obtained, device performance is improved.

Description

A kind of manufacturing method of sensor element
Technical field
The present invention relates to electronic component manufacturing technology field more particularly to a kind of manufacturing methods of sensor element.
Background technology
Current existing sheet type sensor structure is mainly made of 3 layers of oxidation zirconia substrate and several function thick-film layers, is aoxidized Zirconia substrate is mainly molded by the method for being cast or rolling film, and thick film functional layer is mainly obtained by screen printing technique.Oxygen The measuring electrode and reference electrode of sensor are respectively formed on the surfaces externally and internally of substrate, by punch forming by the middle part of substrate One of long and narrow openning is washed open, to form reference air duct;And the platinum disposition of heating component wrapped up by ceramic insulating layer exists On the inner surface of bottom substrate, also two through-holes are made a call to by the heating element of inner surface with outer surface end in the end of substrate Heating electrode slice connects, and thus constitutes sensing element and the integrated chip oxygen sensor structure of heating element. But the structural thickness is thick, volume is big, production process is complicated, and heating element is planted in the form of wrapping up in sensor internal, stability It is poor, and it is easy electric leakage.
Invention content
In consideration of it, the present invention provides a kind of manufacturing method of sensor element, manufacturing method includes the following steps:
Step 1:The cover plate of the insulating materials properties such as polyvinyl chloride, polypropylene, makrolon and acrylic resin is selected, The electrode sensing plate that surface is coated with to the electrode slurrys such as silver paste or silver-colored palladium slurry is fixed on cover plate by the technique of matrix printing Among piezoelectric substrate, to form electrodes conduct band;
Step 2:Graphene is shifted to target substrate surface, metal grid electrode pattern is made on target substrate surface;
Step 3:The ceramic substrate that photoetching is completed is put into magnetron sputtering apparatus, sputters Pt metallic films;
Step 4:The above-mentioned ceramic substrate that obtains is put into the stove of O2 atmosphere ablation or is put into removal SU-8 glue in salt bath, Finally obtain the Pt metal micro structure figures of deposition on a ceramic substrate.
To so of the invention that further describe, if 2~3 times of the thickness Pt thickness of metal film of the step 4 SU-8 glue.
Using above-mentioned technical proposal, have the advantages that:
Using this preparation method, the bottleneck that ion beam etch process will not be used technique, reduce equipment investment, and heavier What is wanted is that technique greatly simplifies, and greatly reduces the flow time, obtains preferable magneto-resistive layer surface topography, improves device performance.
Specific implementation mode
Embodiment 1:A kind of manufacturing method of sensor element, manufacturing method include the following steps:
Step 1:The cover plate of the insulating materials properties such as polyvinyl chloride, polypropylene, makrolon and acrylic resin is selected, The electrode sensing plate that surface is coated with to the electrode slurrys such as silver paste or silver-colored palladium slurry is fixed on cover plate by the technique of matrix printing Among piezoelectric substrate, to form electrodes conduct band;
Step 2:Graphene is shifted to target substrate surface, metal grid electrode pattern is made on target substrate surface;
Step 3:The ceramic substrate that photoetching is completed is put into magnetron sputtering apparatus, sputters Pt metallic films;
Step 4:The above-mentioned ceramic substrate that obtains is put into the stove of O2 atmosphere ablation or is put into removal SU-8 glue in salt bath, Finally obtain the Pt metal micro structure figures of deposition on a ceramic substrate.
To so of the invention that further describe, if 2~3 times of the thickness Pt thickness of metal film of the step 4 SU-8 glue.
Using above-mentioned technical proposal, have the advantages that:
Using this preparation method, the bottleneck that ion beam etch process will not be used technique, reduce equipment investment, and heavier What is wanted is that technique greatly simplifies, and greatly reduces the flow time, obtains preferable magneto-resistive layer surface topography, improves device performance.
The foregoing describe the basic principles and main features of the present invention, It should be understood by those skilled in the art that of the invention It is not restricted to the described embodiments, the above embodiments and description only illustrate the principle of the present invention, is not departing from Under the premise of spirit and scope of the invention, various changes and improvements may be made to the invention, these changes and improvements both fall within requirement In the scope of the invention of protection, invents claimed range and be defined by the appending claims and its equivalent thereof.

Claims (2)

1. a kind of manufacturing method of sensor element, which is characterized in that manufacturing method includes the following steps:
Step 1:The cover plate of the insulating materials properties such as polyvinyl chloride, polypropylene, makrolon and acrylic resin is selected, The electrode sensing plate that surface is coated with to the electrode slurrys such as silver paste or silver-colored palladium slurry is fixed on cover plate by the technique of matrix printing Among piezoelectric substrate, to form electrodes conduct band;
Step 2:Graphene is shifted to target substrate surface, metal grid electrode pattern is made on target substrate surface;
Step 3:The ceramic substrate that photoetching is completed is put into magnetron sputtering apparatus, sputters Pt metallic films;
Step 4:The above-mentioned ceramic substrate that obtains is put into the stove of O2 atmosphere ablation or is put into removal SU-8 glue in salt bath, Finally obtain the Pt metal micro structure figures of deposition on a ceramic substrate.
2. a kind of manufacturing method of sensor element according to claim 1, which is characterized in that the step 4 SU-8 glue If 2~3 times of thickness Pt thickness of metal film.
CN201810304257.4A 2018-04-08 2018-04-08 A kind of manufacturing method of sensor element Pending CN108593734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810304257.4A CN108593734A (en) 2018-04-08 2018-04-08 A kind of manufacturing method of sensor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810304257.4A CN108593734A (en) 2018-04-08 2018-04-08 A kind of manufacturing method of sensor element

Publications (1)

Publication Number Publication Date
CN108593734A true CN108593734A (en) 2018-09-28

Family

ID=63624597

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810304257.4A Pending CN108593734A (en) 2018-04-08 2018-04-08 A kind of manufacturing method of sensor element

Country Status (1)

Country Link
CN (1) CN108593734A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114311351A (en) * 2021-12-17 2022-04-12 中国船舶重工集团公司第七一五研究所 Preparation method of 1-3 type piezoelectric single crystal composite material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114311351A (en) * 2021-12-17 2022-04-12 中国船舶重工集团公司第七一五研究所 Preparation method of 1-3 type piezoelectric single crystal composite material

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Application publication date: 20180928