CN108550696A - Phase-change memory - Google Patents
Phase-change memory Download PDFInfo
- Publication number
- CN108550696A CN108550696A CN201810339585.8A CN201810339585A CN108550696A CN 108550696 A CN108550696 A CN 108550696A CN 201810339585 A CN201810339585 A CN 201810339585A CN 108550696 A CN108550696 A CN 108550696A
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- phase change
- heating element
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- 238000004519 manufacturing process Methods 0.000 abstract description 10
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
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- 238000005229 chemical vapour deposition Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
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- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
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- 238000001311 chemical methods and process Methods 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
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- 230000009466 transformation Effects 0.000 description 2
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
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- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910005939 Ge—Sn Inorganic materials 0.000 description 1
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- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 229910018110 Se—Te Inorganic materials 0.000 description 1
- 229910020938 Sn-Ni Inorganic materials 0.000 description 1
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- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910008937 Sn—Ni Inorganic materials 0.000 description 1
- 229910008772 Sn—Se Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 230000003321 amplification Effects 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810339585.8A CN108550696B (en) | 2016-03-08 | 2016-03-08 | Phase change memory |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810339585.8A CN108550696B (en) | 2016-03-08 | 2016-03-08 | Phase change memory |
CN201610130129.3A CN105789437B (en) | 2016-03-08 | 2016-03-08 | The method for manufacturing phase-change memory |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610130129.3A Division CN105789437B (en) | 2016-03-08 | 2016-03-08 | The method for manufacturing phase-change memory |
Publications (2)
Publication Number | Publication Date |
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CN108550696A true CN108550696A (en) | 2018-09-18 |
CN108550696B CN108550696B (en) | 2022-02-25 |
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Family Applications (2)
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CN201810339585.8A Active CN108550696B (en) | 2016-03-08 | 2016-03-08 | Phase change memory |
CN201610130129.3A Active CN105789437B (en) | 2016-03-08 | 2016-03-08 | The method for manufacturing phase-change memory |
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CN201610130129.3A Active CN105789437B (en) | 2016-03-08 | 2016-03-08 | The method for manufacturing phase-change memory |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111969105B (en) * | 2020-08-10 | 2023-08-08 | 长江存储科技有限责任公司 | Phase change memory device, manufacturing method and operation method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101000945A (en) * | 2006-01-09 | 2007-07-18 | 财团法人工业技术研究院 | Phase storage element andmanuafcturing method thereof |
CN101241925A (en) * | 2007-02-09 | 2008-08-13 | 财团法人工业技术研究院 | Phase change memory device and its making method |
CN101271862A (en) * | 2007-03-19 | 2008-09-24 | 财团法人工业技术研究院 | Memory element and manufacturing method thereof |
US20150162528A1 (en) * | 2010-08-31 | 2015-06-11 | International Business Machines Corporation | Post-fabrication self-aligned initialization of integrated devices |
CN105098071A (en) * | 2015-07-08 | 2015-11-25 | 宁波时代全芯科技有限公司 | Method for manufacturing phase-change memory |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8173987B2 (en) * | 2009-04-27 | 2012-05-08 | Macronix International Co., Ltd. | Integrated circuit 3D phase change memory array and manufacturing method |
CN102148261B (en) * | 2010-02-10 | 2013-01-23 | 中国科学院微电子研究所 | Manufacturing method of capacitor structure |
CN104733469B (en) * | 2010-06-30 | 2018-11-06 | 桑迪士克科技有限责任公司 | Ultra high density vertically with non-memory device and its manufacturing method |
KR20130139602A (en) * | 2012-06-13 | 2013-12-23 | 에스케이하이닉스 주식회사 | Semiconductor device, memory system comprising the same and method of manufacturing the same |
US9099637B2 (en) * | 2013-03-28 | 2015-08-04 | Intellectual Discovery Co., Ltd. | Phase change memory and method of fabricating the phase change memory |
CN105304638A (en) * | 2015-11-16 | 2016-02-03 | 上海新储集成电路有限公司 | Three-dimensional phase change memory structure and manufacturing structure |
-
2016
- 2016-03-08 CN CN201810339585.8A patent/CN108550696B/en active Active
- 2016-03-08 CN CN201610130129.3A patent/CN105789437B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101000945A (en) * | 2006-01-09 | 2007-07-18 | 财团法人工业技术研究院 | Phase storage element andmanuafcturing method thereof |
CN101241925A (en) * | 2007-02-09 | 2008-08-13 | 财团法人工业技术研究院 | Phase change memory device and its making method |
CN101271862A (en) * | 2007-03-19 | 2008-09-24 | 财团法人工业技术研究院 | Memory element and manufacturing method thereof |
US20150162528A1 (en) * | 2010-08-31 | 2015-06-11 | International Business Machines Corporation | Post-fabrication self-aligned initialization of integrated devices |
CN105098071A (en) * | 2015-07-08 | 2015-11-25 | 宁波时代全芯科技有限公司 | Method for manufacturing phase-change memory |
Also Published As
Publication number | Publication date |
---|---|
CN108550696B (en) | 2022-02-25 |
CN105789437A (en) | 2016-07-20 |
CN105789437B (en) | 2018-06-19 |
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Legal Events
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Applicant after: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Applicant after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Applicant after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223300 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Applicant before: Jiangsu times all core storage technology Co.,Ltd. Applicant before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Applicant before: BEING ADVANCED MEMORY TAIWAN LIMITED |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Patentee after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223300 No. 601 East Changjiang Road, Huaiyin District, Huaian City, Jiangsu Province Patentee before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231127 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Patentee after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Patentee before: Beijing times full core storage technology Co.,Ltd. Patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |