CN108538444A - A kind of electrocondution slurry and preparation method thereof for semiconductor packages - Google Patents
A kind of electrocondution slurry and preparation method thereof for semiconductor packages Download PDFInfo
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- CN108538444A CN108538444A CN201810337799.1A CN201810337799A CN108538444A CN 108538444 A CN108538444 A CN 108538444A CN 201810337799 A CN201810337799 A CN 201810337799A CN 108538444 A CN108538444 A CN 108538444A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
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Abstract
The invention belongs to fine Electronic field of chemicals more particularly to a kind of electrocondution slurries and preparation method thereof for semiconductor packages.Electrocondution slurry of the present invention is made of conductive filler, solvent, dispersant and viscosity modifier;The conductive filler is the nano metal of conducting polymer cladding.Conductive filler in electrocondution slurry of the present invention uses covering material of the conducting polymer as nano-metal particle, it can improve and agglomeration easily occurs caused by nano-metal particle high surface energy, effectively improve the oxidation resistance of nano-metal particle, the requirement for preventing nano-metal particle from reuniting and aoxidizing can not only be reached, and nano-metal particle of the present invention is when using, the conducting polymer composite not completely removed is conductive, reduce influence of the clad to the electric conductivity of nano-metal particle, it solves conventional polymer and the nano-metal particle electric conductivity decline that organic coating is brought is carried out to nano metal, the problem of leveraging the performance of electrocondution slurry.
Description
Technical field
The invention belongs to fine Electronic field of chemicals more particularly to a kind of electrocondution slurry for semiconductor packages and its
Preparation method.
Background technology
Electrocondution slurry be applied to chip encapsulation technology field, for semiconductor chip interconnection and die bond, electrically conductive ink and
Printed wire etc..When conductive filler in electrocondution slurry uses nano-metal particle, in order to prevent nano-metal particle because
Its high surface energy, which generates, reunites and prevents nano-metal particle from aoxidizing, and is wrapped to nano-metal particle using organic material
It covers.
The covering material of traditional organic coating is typically to insulate, although can also prevent nano-metal particle reunion and oxygen
Change, but if could not be effectively removed to covering material before using nano-metal particle, it can be to nano-metal particle
Electric conductivity etc. produce bigger effect, leverage the performance of electrocondution slurry.
Invention content
The electrocondution slurry and preparation method thereof that the present invention provides a kind of for semiconductor packages, for solving nano metal
The covering material of particle organic coating is typically to insulate, if could not be carried out to covering material before using nano-metal particle
It effectively removes, then the electric conductivity etc. of nano-metal particle can be produced bigger effect, leverage the performance of electrocondution slurry
The problem of.
The specific technical solution of the present invention is as follows:
A kind of electrocondution slurry for semiconductor packages is made of conductive filler, solvent, dispersant and viscosity modifier;
The conductive filler is the nano metal of conducting polymer cladding.
Preferably, the grain size of the nano-metal particle is 50nm~500nm;
The nano-metal particle is nano copper particle, nanoparticle palladium, nano nickle granules, nano-Ag particles and nanogold
It is one or more in particle.
Preferably, the solvent is water, ethyl alcohol, acetone, ethylene glycol, glycerine, dimethylbenzene isopropanol bisphenol-A, epoxy chlorine
It is one or more in propane, epoxy resin, primary amine, tertiary amine, acid anhydrides, phenol, furfural and resorcinol;
The dispersant is Arabic gum, polyvinyl alcohol, polyethylene glycol, gelatin, polyethylene alkanone imidazoles, 1- methyl miaows
It is one or more in azoles, 2-methylimidazole, 4-methylimidazole, phenylimidazole and 2- ethyl imidazol(e)s;
The viscosity modifier is in methylcellulose, ethyl cellulose, hydroxylated cellulose, primary amine, tertiary amine and acid anhydrides
It is one or more.
Preferably, the weight percent of conductive filler, solvent, dispersant and viscosity modifier is 8%~90%:8%~
90%:1%~10%:1%~10%.
The present invention also provides a kind of preparation methods of the electrocondution slurry for semiconductor packages, include the following steps:
A) in the mixed liquor of Bronsted acid and dopant, after nano-metal particle is added in stirring, conducting polymer is added
Monomer obtains the conducting polymer home position polymerization reaction liquid containing nano-metal particle;
B) by described, the conducting polymer home position polymerization reaction liquid containing nano-metal particle carries out conductive polymer under stiring
Sub- home position polymerization reaction obtains the dispersion solution of the nano metal coated containing conducting polymer;
C) the dispersion solution of the nano metal of the cladding containing conducting polymer is dried, obtains conducting polymer packet
The nano metal covered;
D) it is stirred for that receiving for the conducting polymer cladding is added after being mixed solvent, dispersant and viscosity modifier
Rice metal, is disperseed, obtains electrocondution slurry.
Preferably, the molar ratio of dopant and the nano-metal particle described in step a) is 1:1~5.
Preferably, the temperature of conducting polymer home position polymerization reaction described in step b) is 20~40 DEG C;
The time of conducting polymer home position polymerization reaction described in step b) is 10~300min.
Preferably, Bronsted acid described in step a) is one or more in sulfuric acid, acetic acid, hydrochloric acid, perchloric acid and nitric acid;
Dopant described in step a) is sodium peroxydisulfate, potassium bichromate, Potassiumiodate, hydrogen peroxide, ammonium persulfate and iron chloride
In it is one or more;
Conductive high polymer monomer described in step a) be aniline, pyrroles, thiophene, benzyne, how with one kind in furans or more
Kind.
Preferably, the Bronsted acid is dense in the conducting polymer home position polymerization reaction liquid containing nano-metal particle
Degree is 0.001~1M;
The dopant is a concentration of in the conducting polymer home position polymerization reaction liquid containing nano-metal particle
0.001~0.5M.
Preferably, the conductive high polymer monomer is in the conducting polymer home position polymerization reaction containing nano-metal particle
A concentration of 0.001~0.5M in liquid.
In conclusion the present invention provides a kind of electrocondution slurry for semiconductor packages, by conductive filler, solvent, divide
Powder and viscosity modifier are made;The conductive filler is the nano metal of conducting polymer cladding.In electrocondution slurry of the present invention
Conductive filler use covering material of the conducting polymer as nano-metal particle, nano-metal particle high surface energy can be improved
Caused easy generation agglomeration, effectively improves the oxidation resistance of nano-metal particle, and can not only reach prevents nano metal
The requirement of particle agglomeration and oxidation, and nano-metal particle of the present invention is in use, the conducting polymer material not completely removed
Expect conductive, reduces influence of the clad to the electric conductivity of nano-metal particle, solve conventional polymer to receiving
Rice metal carries out the nano-metal particle electric conductivity that organic coating is brought and declines, and leverages asking for the performance of electrocondution slurry
Topic.
Specific implementation mode
The electrocondution slurry and preparation method thereof that the present invention provides a kind of for semiconductor packages, for solving nano metal
The covering material of particle organic coating is typically to insulate, if could not be carried out to covering material before using nano-metal particle
It effectively removes, then the electric conductivity etc. of nano-metal particle can be produced bigger effect, leverage the performance of electrocondution slurry
The problem of.
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
The every other embodiment that technical staff is obtained without making creative work belongs to the model that the present invention protects
It encloses.
A kind of electrocondution slurry for semiconductor packages is made of conductive filler, solvent, dispersant and viscosity modifier;
Conductive filler is the nano metal of conducting polymer cladding.
In the present invention, the conductive filler of electrocondution slurry uses covering material of the conducting polymer as nano-metal particle,
It can improve and agglomeration easily occurs caused by nano-metal particle high surface energy, effectively improve the anti-oxidant energy of nano-metal particle
Power can not only reach the requirement for preventing nano-metal particle from reuniting and aoxidizing, and nano-metal particle of the present invention is not in use, have
There is the conducting polymer composite completely removed conductive, reduces shadow of the clad to the electric conductivity of nano-metal particle
It rings, solves conventional polymer and the nano-metal particle electric conductivity decline that organic coating is brought is carried out to nano metal, significantly
The problem of affecting the performance of electrocondution slurry.
In the present invention, the grain size of nano-metal particle is 50nm~500nm;
Nano-metal particle is nano copper particle, nanoparticle palladium, nano nickle granules, nano-Ag particles and nanogold particle
In it is one or more.
In the present invention, solvent is water, ethyl alcohol, acetone, ethylene glycol, glycerine, dimethylbenzene isopropanol bisphenol-A, epoxy chloropropionate
It is one or more in alkane, epoxy resin, primary amine, tertiary amine, acid anhydrides, phenol, furfural and resorcinol;
Dispersant is Arabic gum, polyvinyl alcohol, polyethylene glycol, gelatin, polyethylene alkanone imidazoles, 1- methylimidazoles, 2-
It is one or more in methylimidazole, 4-methylimidazole, phenylimidazole and 2- ethyl imidazol(e)s;
Viscosity modifier is one kind in methylcellulose, ethyl cellulose, hydroxylated cellulose, primary amine, tertiary amine and acid anhydrides
Or it is a variety of.
In the present invention, conductive filler, solvent, dispersant and viscosity modifier weight percent be 8%~90%:8%
~90%:1%~10%:1%~10%.
The present invention also provides a kind of preparation methods of the electrocondution slurry for semiconductor packages, include the following steps:
A) in the mixed liquor of Bronsted acid and dopant, after nano-metal particle is added in stirring, conducting polymer is added
Monomer obtains the conducting polymer home position polymerization reaction liquid containing nano-metal particle;
B) the conducting polymer home position polymerization reaction liquid containing nano-metal particle is subjected to conducting polymer original under stiring
Position polymerisation, obtains the dispersion solution of the nano metal coated containing conducting polymer;
C) the dispersion solution of the nano metal coated containing conducting polymer is dried, obtains conducting polymer cladding
Nano metal;
D) it is stirred for that the nanogold of conducting polymer cladding is added after being mixed solvent, dispersant and viscosity modifier
Belong to, is disperseed, obtain electrocondution slurry.
In the present invention, further include before step a):Nano-metal particle is pre-processed, nano-metal particle table is removed
The oxide in face.
Nano-metal particle is more specifically nano copper particle, is pre-processed more specifically to nano-metal particle:
Nano copper particle is added into dilute sulfuric acid, at 10~40 DEG C, is stirred reaction, obtains containing nano copper particle
Dilution heat of sulfuric acid;
At 10~40 DEG C, the dilution heat of sulfuric acid containing nano copper particle is cleaned using deionized water, wash number
It is 2~4 times, obtains the nano copper particle after deionized water cleaning;
The mixing speed being stirred to react is 300~3000rpm;The time being stirred to react is 1~10min;It is stirred to react more
Specially magnetic agitation is reacted.
The ratio between the quality of nano copper particle and the volume of dilute sulfuric acid are 0.001~0.01g:1mL;The mass fraction of dilute sulfuric acid
It is 1%~10%.
In the present invention, the molar ratio of dopant and nano-metal particle is 1 in step a):1~5.
In the present invention, the temperature of conducting polymer home position polymerization reaction is 20~40 DEG C in step b);
The time of conducting polymer home position polymerization reaction is 10~300min in step b).
In the present invention, the mixing speed stirred in step a) is 300~3000rpm;
The mixing speed stirred in step b) is 300~3000rpm;
The mixing speed stirred in step d) is 300~3000rpm.
In the present invention, dry in step c) is specially to be dried in vacuo;
Vacuum drying temperature is 20~50 DEG C;
The vacuum drying time is 1~12h.
In the present invention, after step b) obtains the dispersion solution of the nano metal coated containing conducting polymer, step c) will
Before the dispersion solution of the nano metal of the cladding containing conducting polymer is dried, further include:
The dispersion solution of the nano metal coated containing conducting polymer is centrifuged, obtains wet containing conducting polymer
The nano metal of object cladding;
The nano metal of the wet cladding containing conducting polymer carries out with deionized water to 3~5 washings, then with anhydrous second
Alcohol carries out 2~5 washings.
In the present invention, Bronsted acid is one or more in sulfuric acid, acetic acid, hydrochloric acid, perchloric acid and nitric acid in step a);
Dopant is in sodium peroxydisulfate, potassium bichromate, Potassiumiodate, hydrogen peroxide, ammonium persulfate and iron chloride in step a)
It is one or more;
In step a) conductive high polymer monomer be aniline, pyrroles, thiophene, benzyne, how with it is one or more in furans.
In the present invention, Bronsted acid is a concentration of in the conducting polymer home position polymerization reaction liquid containing nano-metal particle
0.001~1M;
Dopant in the conducting polymer home position polymerization reaction liquid containing nano-metal particle a concentration of 0.001~
0.5M。
Conductive high polymer monomer is a concentration of in the conducting polymer home position polymerization reaction liquid containing nano-metal particle
0.001~0.5M.
In the present invention, step d) is stirred for that conducting polymer is added after being mixed solvent, dispersant and viscosity modifier
The nano metal of object cladding, is disperseed, obtaining electrocondution slurry is specially:
After solvent, dispersant and viscosity modifier are carried out 1~10min of mixing under 300~3000rpm stirrings, obtain
Electrocondution slurry solution;
The nano metal of conducting polymer cladding is added in stirring in electrocondution slurry solution, after mixing 1~10min, then into
Row 1~60min of ultrasonic disperse, obtains electrocondution slurry.
In the present invention, stirring is specially magnetic agitation.
The present invention prepares electrocondution slurry using the nano metal that conducting polymer coats, and can effectively reduce electrocondution slurry and match
The reunion of nano-metal particle in system and storing process reduces nano-metal particle and prepares in electrocondution slurry and sent out in storing process
Raw oxidation reduces influence of the organic coating material to electric slurry electric conductivity.
For a further understanding of the present invention, with reference to specific embodiment, the present invention will be described in detail.
Embodiment 1
100ml mass fractions, which are added, in copper powder that 20g average diameters are 100nm is in 5% dilute sulfuric acid, at 25 DEG C,
5min is reacted under 1000rpm magnetic agitations, obtains the dilution heat of sulfuric acid containing nano copper particle;
At 25 DEG C, cleaning 3 times is carried out to the dilution heat of sulfuric acid containing nano copper particle using deionized water, obtains deionization
Nano copper particle after water cleaning;
Reaction vessel separately is added in 0.06mol sodium peroxydisulfates, then dilute sulfuric acid and water are added into reaction vessel, reaction is made to hold
A concentration of 0.05M of dilute sulfuric acid in device, a concentration of 0.05M of sodium peroxydisulfate;
Under 1200rpm magnetic agitations, the nano copper particle after deionized water cleaning is added to reaction vessel, then to reaction
Aniline is added in container, obtains the conducting polymer home position polymerization reaction liquid containing nano-metal particle;
By the conducting polymer home position polymerization reaction liquid containing nano-metal particle 30 DEG C, 1200rpm rotating speeds stirring under into
Row 60min conducting polymer home position polymerization reactions, obtain the dispersion solution of the nano metal coated containing conducting polymer;
The dispersion solution of the nano metal coated containing conducting polymer is centrifuged, wet packet containing conducting polymer is obtained
The nano metal covered;
The nano metal of the wet cladding containing conducting polymer carries out with deionized water to 3~5 washings, then with anhydrous second
Alcohol carries out 2~5 washings, then is dried in vacuo at 40 DEG C, obtains the nano metal of conducting polymer cladding.
70g ethyl alcohol, 2g polyethylene glycol and 5g methylcellulose are stirred into 2min in 1200rpm magnetic agitations, added
The nano metal of conducting polymer cladding, then 2min is stirred in 1200rpm magnetic agitations, ultrasonic disperse 5min is finally used,
Obtain the electrocondution slurry for semiconductor packages.
Embodiment 2
100ml mass fractions, which are added, in copper powder that 20g average diameters are 100nm is in 5% dilute sulfuric acid, at 25 DEG C,
5min is reacted under 1000rpm magnetic agitations, obtains the dilution heat of sulfuric acid containing nano copper particle;
At 25 DEG C, cleaning 3 times is carried out to the dilution heat of sulfuric acid containing nano copper particle using deionized water, obtains deionization
Nano copper particle after water cleaning;
Reaction vessel separately is added in 0.06mol sodium peroxydisulfates, then dilute sulfuric acid and water are added into reaction vessel, reaction is made to hold
A concentration of 0.05M of dilute sulfuric acid in device, a concentration of 0.05M of sodium peroxydisulfate;
Under 1200rpm magnetic agitations, the nano copper particle after deionized water cleaning is added to reaction vessel, then to reaction
Aniline is added in container, obtains the conducting polymer home position polymerization reaction liquid containing nano-metal particle;
By the conducting polymer home position polymerization reaction liquid containing nano-metal particle 30 DEG C, 1200rpm rotating speeds stirring under into
Row 60min conducting polymer home position polymerization reactions, obtain the dispersion solution of the nano metal coated containing conducting polymer;
The dispersion solution of the nano metal coated containing conducting polymer is centrifuged, wet packet containing conducting polymer is obtained
The nano metal covered;
The nano metal of the wet cladding containing conducting polymer carries out with deionized water to 3~5 washings, then with anhydrous second
Alcohol carries out 2~5 washings, then is dried in vacuo at 40 DEG C, obtains the nano metal of conducting polymer cladding.
70g ethyl alcohol, 2g polyethylene glycol and 5g ethyl celluloses are stirred into 2min in 1200rpm magnetic agitations, added
The nano metal of conducting polymer cladding, then 2min is stirred in 1200rpm magnetic agitations, ultrasonic disperse 5min is finally used,
Obtain the electrocondution slurry for semiconductor packages.
Embodiment 3
100ml mass fractions, which are added, in copper powder that 20g average diameters are 100nm is in 5% dilute sulfuric acid, at 25 DEG C,
5min is reacted under 1000rpm magnetic agitations, obtains the dilution heat of sulfuric acid containing nano copper particle;
At 25 DEG C, cleaning 3 times is carried out to the dilution heat of sulfuric acid containing nano copper particle using deionized water, obtains deionization
Nano copper particle after water cleaning;
Reaction vessel separately is added in 0.06mol sodium peroxydisulfates, then dilute sulfuric acid and water are added into reaction vessel, reaction is made to hold
A concentration of 0.05M of dilute sulfuric acid in device, a concentration of 0.05M of sodium peroxydisulfate;
Under 1200rpm magnetic agitations, the nano copper particle after deionized water cleaning is added to reaction vessel, then to reaction
Aniline is added in container, obtains the conducting polymer home position polymerization reaction liquid containing nano-metal particle;
By the conducting polymer home position polymerization reaction liquid containing nano-metal particle 30 DEG C, 1200rpm rotating speeds stirring under into
Row 60min conducting polymer home position polymerization reactions, obtain the dispersion solution of the nano metal coated containing conducting polymer;
The dispersion solution of the nano metal coated containing conducting polymer is centrifuged, wet packet containing conducting polymer is obtained
The nano metal covered;
The nano metal of the wet cladding containing conducting polymer carries out with deionized water to 3~5 washings, then with anhydrous second
Alcohol carries out 2~5 washings, then is dried in vacuo at 40 DEG C, obtains the nano metal of conducting polymer cladding.
70g ethyl alcohol, 2g polyethylene glycol and 5g ethyl celluloses are stirred into 2min in 1200rpm magnetic agitations, added
The nano metal of conducting polymer cladding, then 2min is stirred in 1200rpm magnetic agitations, ultrasonic disperse 10min is finally used,
Obtain the electrocondution slurry for semiconductor packages.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of electrocondution slurry for semiconductor packages, which is characterized in that by conductive filler, solvent, dispersant and viscosity tune
Section agent is made;
The conductive filler is the nano metal of conducting polymer cladding.
2. electrocondution slurry according to claim 1, which is characterized in that the grain size of the nano-metal particle be 50nm~
500nm;
The nano-metal particle is nano copper particle, nanoparticle palladium, nano nickle granules, nano-Ag particles and nanogold particle
In it is one or more.
3. electrocondution slurry according to claim 1, which is characterized in that the solvent is water, ethyl alcohol, acetone, ethylene glycol, third
Triol, dimethylbenzene isopropanol bisphenol-A, epoxychloropropane, epoxy resin, primary amine, tertiary amine, acid anhydrides, phenol, furfural and resorcinol
In it is one or more;
The dispersant is Arabic gum, polyvinyl alcohol, polyethylene glycol, gelatin, polyethylene alkanone imidazoles, 1- methylimidazoles, 2-
It is one or more in methylimidazole, 4-methylimidazole, phenylimidazole and 2- ethyl imidazol(e)s;
The viscosity modifier is one kind in methylcellulose, ethyl cellulose, hydroxylated cellulose, primary amine, tertiary amine and acid anhydrides
Or it is a variety of.
4. electrocondution slurry according to claim 3, which is characterized in that conductive filler, solvent, dispersant and viscosity modifier
Weight percent be 8%~90%:8%~90%:1%~10%:1%~10%.
5. a kind of preparation method of electrocondution slurry for semiconductor packages, which is characterized in that include the following steps:
A) in the mixed liquor of Bronsted acid and dopant, after nano-metal particle is added in stirring, conductive high polymer monomer is added,
Obtain the conducting polymer home position polymerization reaction liquid containing nano-metal particle;
B) by described, the conducting polymer home position polymerization reaction liquid containing nano-metal particle carries out conducting polymer original under stiring
Position polymerisation, obtains the dispersion solution of the nano metal coated containing conducting polymer;
C) the dispersion solution of the nano metal of the cladding containing conducting polymer is dried, obtains conducting polymer cladding
Nano metal;
D) it is stirred for that the nanogold of the conducting polymer cladding is added after being mixed solvent, dispersant and viscosity modifier
Belong to, is disperseed, obtain electrocondution slurry.
6. preparation method according to claim 5, which is characterized in that dopant described in step a) and the nano metal
The molar ratio of particle is 1:1~5.
7. preparation method according to claim 5, which is characterized in that conducting polymer in-situ polymerization described in step b) is anti-
The temperature answered is 20~40 DEG C;
The time of conducting polymer home position polymerization reaction described in step b) is 10~300min.
8. preparation method according to claim 5, which is characterized in that Bronsted acid described in step a) is sulfuric acid, acetic acid, salt
It is one or more in acid, perchloric acid and nitric acid;
Dopant described in step a) is in sodium peroxydisulfate, potassium bichromate, Potassiumiodate, hydrogen peroxide, ammonium persulfate and iron chloride
It is one or more;
Conductive high polymer monomer described in step a) be aniline, pyrroles, thiophene, benzyne, how with it is one or more in furans.
9. preparation method according to claim 8, which is characterized in that the Bronsted acid is described containing nano-metal particle
A concentration of 0.001~1M in conducting polymer home position polymerization reaction liquid;
The dopant in the conducting polymer home position polymerization reaction liquid containing nano-metal particle a concentration of 0.001~
0.5M。
10. preparation method according to claim 8, which is characterized in that the conductive high polymer monomer contains nanometer described
A concentration of 0.001~0.5M in the conducting polymer home position polymerization reaction liquid of metallic particles.
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Cited By (1)
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CN112521801A (en) * | 2020-11-05 | 2021-03-19 | 青岛大学 | Organic-inorganic composite metal conductive particle, preparation method thereof, conductive ink for aqueous inkjet printing and patterned electronic fabric |
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CN101838460A (en) * | 2010-06-12 | 2010-09-22 | 中南大学 | Core-shell structure polyaniline / silver conductive nano composite material and preparation method thereof |
CN103854717A (en) * | 2014-02-14 | 2014-06-11 | 中国科学院电工研究所 | Lead-free mixed sizing agent and preparation method thereof |
CN104318978A (en) * | 2014-10-25 | 2015-01-28 | 苏州华琼电子材料有限公司 | Electro-conductive paste with core shell conductive particles and preparation method thereof |
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CN101306468A (en) * | 2007-05-19 | 2008-11-19 | 浙江师范大学 | Preparation method of conductive silver composite nano particles coated by polypyrrole |
CN101838460A (en) * | 2010-06-12 | 2010-09-22 | 中南大学 | Core-shell structure polyaniline / silver conductive nano composite material and preparation method thereof |
CN103854717A (en) * | 2014-02-14 | 2014-06-11 | 中国科学院电工研究所 | Lead-free mixed sizing agent and preparation method thereof |
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