CN108535912A - Display with direct-type backlight unit - Google Patents

Display with direct-type backlight unit Download PDF

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Publication number
CN108535912A
CN108535912A CN201810173014.1A CN201810173014A CN108535912A CN 108535912 A CN108535912 A CN 108535912A CN 201810173014 A CN201810173014 A CN 201810173014A CN 108535912 A CN108535912 A CN 108535912A
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CN
China
Prior art keywords
light
emitting diode
light emitting
layer
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810173014.1A
Other languages
Chinese (zh)
Inventor
刘榕
Y·P·孙
A·哈菲迪
E·A·子维格勒
齐军
顾明霞
V·H·殷
李向同
李妍明
黄毅
洪自若
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Apple Inc
Original Assignee
Apple Computer Inc
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Filing date
Publication date
Application filed by Apple Computer Inc filed Critical Apple Computer Inc
Publication of CN108535912A publication Critical patent/CN108535912A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133605—Direct backlight including specially adapted reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/13362—Illuminating devices providing polarized light, e.g. by converting a polarisation component into another one
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • G02F1/133607—Direct backlight including a specially adapted diffusing, scattering or light controlling members the light controlling member including light directing or refracting elements, e.g. prisms or lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133611—Direct backlight including means for improving the brightness uniformity
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133612—Electrical details

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Planar Illumination Modules (AREA)
  • Liquid Crystal (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention is entitled " display for carrying direct-type backlight unit ".Pel array in display can be illuminated by backlight, which has the light emitting diode matrix in the array of corresponding units.Reflector is used to reflect the light from light emitting diode by pel array.In unit, there is reflector cross section profile, the cross section profile to help the light emitted towards the edge distribution of unit from light emitting diode.Light diffuser layer for backlight can have partially reflecting layer, such as thin film interference filters with angular dependent transmissive.In each unit, reflector can have the cross section profile of the part with promising parabola or ellipse.

Description

Display with direct-type backlight unit
This application claims the temporary patent application No.62/466,492 submitted on March 3rd, 2017 and in 2017 11 The non-provisional No.15/819 that the moon is submitted on the 21st, 085 equity, above-mentioned patent application are incorporated by reference accordingly It is incorporated herein.
Technical field
Present invention relates generally to displays, and relate more specifically to backlit display.
Background technology
Electronic equipment includes usually display.For example, computer and cellular phone are sometimes provided with backlight liquid crystal display. Edge-lit backlight unit has the light emitting diode in the edge surface for emitting light into light guide plate.Then, light guide plate will emit Light cross direction profiles over the display for use as back lighting.Direct-type backlight unit has perpendicular through display emission light Light emitting diode matrix.
Direct-type backlight can have the light emitting diode of local tunable optical, the light emitting diode to allow to enhance dynamic range. However, if accidentally, the possible volume of direct-type backlight is big or there may be non-uniform back lightings.
Invention content
Display can have pel array, such as liquid crystal pixel array.The backlight from back light unit can be used in pel array It illuminates to illuminate.Back light unit may include light emitting diode matrix and help to come from light emitting diode by pel array reflection Light reflective optical system.Each light emitting diode can be placed in corresponding units.In each cell, reflective optical system can have Cross section profile including parabola or oval shaped portion.
Diffusing globe in display can be used for making the light uniformization from light emitting diode matrix.Phosphorescent layer and other optics Film can be Chong Die with diffusing globe.
Light emitting diode can be blue light emitting diode.Partially reflecting layer can be plugged on diffusing globe and light emitting diode matrix Between.Partially reflecting layer can be formed by the stacking of the dielectric layer on diffusing globe.The stacking of dielectric layer can be formed with angled The thin film interference filters of dependent transmissive.
Light emitting diode may be mounted to printed circuit, and can project through the opening in reflective optical system.Reflective optical system can It is formed by reflecting material, the reflecting material such as reflective white layer or the dielectric stack for forming film interference mirror.
Description of the drawings
Fig. 1 is the diagram according to the illustrative electronic device with display of embodiment.
Fig. 2 is the side cross-sectional view according to the illustrative display of embodiment.
Fig. 3 is the top view according to the exemplary light emitting diode array of the direct-type backlight unit of embodiment.
Fig. 4 is the side cross-sectional view according to the exemplary light emitting diode of embodiment.
Fig. 5 is illustrated how with various angles from light emitting diode transmitting light in cavity reflection device according to embodiment In exemplary light emitting diode side cross-sectional view.
Fig. 6 is that show can be how by having angularly according to the light emitting diode of Fig. 5 of embodiment and reflecting layer The layer of the light transmittance of variation and the figure being overlapped.
Fig. 7 and Fig. 8 is the perspective view according to the cavity reflection device unit for back light unit of embodiment.
Fig. 9 is the top view according to a part for the back light unit of embodiment.
Figure 10 is the side cross-sectional view of the illustrative cavity reflection device of type shown in Fig. 7 according to embodiment.
Figure 11 is the side cross-sectional view of the illustrative cavity reflection device of type shown in Fig. 8 according to embodiment.
Figure 12 be according to embodiment include with cartouche part illustrative cavity reflection device sectional view Show.
Figure 13 be according to embodiment include with parabolic profile part illustrative cavity reflection device sectional view Show.
Figure 14 is according to the side cross-sectional view of the illustrative stacking of the dielectric layer of embodiment, the dielectric layer such as shape At the dielectric layer of the alternating refractive index of thin film interference filters.
Figure 15 is the side cross-sectional view that layer is collimated according to the illustrative light of such as prism film of embodiment.
Figure 16 is the side cross-sectional view according to the illustrative micro-lens arrays layer of embodiment.
Figure 17 is the side cross-sectional view according to the illustrative diffuser layers of embodiment.
Figure 18 is the side cross-sectional view according to the illustrative display of embodiment.
Specific implementation mode
Electronic equipment may be provided with backlit display.Backlit display may include through the light from direct-type backlight unit Carry out the liquid crystal pixel array or other display device structures of back lighting.Fig. 1, which is shown, may be provided with direct-type backlight list The perspective view of the illustrative electronic device of the type of the display of member.The electronic equipment 10 of Fig. 1 can be that computing device is such as above-knee Type computer, the computer monitor comprising embedded computer, tablet computer, cellular phone, media player or other Hand-held or portable electronic device, it is smaller equipment (such as watch equipment), hanging equipment, earphone or receiver device, embedding Enter the equipment in glasses or the other instruments being worn on the head of user or other Wearables or micromodule equipment, electricity Depending on machine, not comprising embedded computer computer display, game station, navigation equipment, embedded system (such as system, Be installed in information kiosk or automobile with the electronic instrument of display in the system), implement two kinds in these equipment or more The instrument of the function of plurality of devices or other electronic instruments.
As shown in Figure 1, equipment 10 can have display such as display 14.Display 14 may be mounted to that in shell 12. Sometimes the shell 12 for being referred to alternatively as shell or outer cover can be by plastics, glass, ceramics, fibrous composite, metal (for example, stainless Steel, aluminium etc.), the arbitrary combinations of two or more of other suitable materials or these materials formed.Shell 12 can be used Integral type configures to be formed, and in integral type configuration, some or all shells 12 are processed or are molded as single structure or can It is formed using multiple structures (for example, one or more structures etc. of internal framework, formation outer enclosure surface).
Shell 12 can have such as optional holder 18 of holder, can have multiple parts (for example, be moved relative to each other with Form the casing part of laptop computer or the other equipment with removable part), can have cellular phone or tablet electricity The shape (for example, in arrangement that holder 18 is wherein omitted) of brain, and/or can have other suitable configurations.In Fig. 1 Shown in for the arrangement of shell 12 be illustrative.
Display 14 can be combine conducting capacity touch sensor electrode layer or other touch sensor components (for example, Resistive touch sensor component, acoustic touch sensor component, the touch sensor components based on power, the touch sensing based on light Device component etc.) touch-screen display, or it is not touch-sensitive display that can be.Capacitance touch screen electrode can be by indium oxide soldering The array of disk or other transparent conducting structures is formed.
Display 14 may include the array of the pixel 16 formed by liquid crystal display (LCD) component, or can have and be based on The pel array of other display technologies.The side cross-sectional view of display 14 is shown in Fig. 2.
As shown in Fig. 2, display 14 may include pel array such as pel array 24.Pel array 24 may include such as scheming The array (for example, pel array with several rows and ordered series of numbers pixel 16) of the pixel of 1 pixel 16.Pel array 24 can be by liquid crystal Display module (sometimes referred to as liquid crystal display or liquid crystal layer) or other suitable picture element array structures are formed.As embodiment, The liquid crystal display for being used to form pel array 24 may include polarizer and lower polarizer, be plugged on polarizer and lower polarization Color-filter layer and tft layer between device and the liquid crystal material being plugged between color-filter layer and tft layer Layer.If desired, other kinds of liquid crystal display device structure can be used to form pel array 24.
During 14 operation, image is displayed on pel array 24.(it is referred to alternatively as carrying on the back back light unit 42 sometimes Light, backlight layer, backing structure, backlight module, back light system etc.) it can be used for generating back lighting 44 across pel array 24. This illuminates any image on pel array 24, (such as to watch the sight of display 14 along direction 22 by viewer 20) person of seeing watches.
Back light unit 42 can have optical film 26, light diffuser such as light diffuser (light diffuser layer) 34 and shine Diode array 36.Light emitting diode matrix 36 may include generating the two of the light source (such as light emitting diode 38) of back lighting 44 Tie up array.As embodiment, light emitting diode 38 can be arranged to row and column, and can be in the X-Y plane of Fig. 2.
Light emitting diode 38 can consistently be controlled by the control circuit in equipment 10, or can be independently controlled (for example, with Implementation helps improve the local dimming scheme of the dynamic range for the image being shown on pel array 24).By each light-emitting diodes The light that pipe 38 generates can travelled upwardly along dimension Z by light diffuser 34 and optical film 26 before pel array 24. Light diffuser 34 may include the light scattering structure for diffusing the light from light emitting diode matrix 36, and to help to provide uniformly Back lighting 44.Optical film 26 may include such as film of dichroic filter 32, phosphor layer 30 and film 28.Film 28 may include Brightness enhancement film, the brightness enhancement film help collimated light 44, and to improve display 14 and/or other optical films for user 20 The brightness of (for example, compensation film etc.).
Light emitting diode 38 can emit the light of any suitable color.In the case of an exemplary arrangement, light-emitting diodes Pipe 38 emits blue light.Dichroic filter layer 32 can be configured as that the blue light from light emitting diode 38 is made to pass through, and reflect simultaneously The light of other colors.Blue light from light emitting diode 38 can be by the embedded photoluminescent material of such as phosphor layer 30 (for example, white Color phosphor material layer or other embedded photoluminescent materials for converting blue light into white light) it is converted into white light.If desired, other light Electroluminescent material can be used for converting blue light into the light (for example, feux rouges, green light, white light etc.) of different colours.For example, a layer 30 (it is referred to alternatively as photoluminescent layers or color conversion layer sometimes) may include the quantum dot (example for converting blue light into feux rouges and green light Such as, to generate the white backlight illumination for including red, green and blue component etc.).The wherein hair of light emitting diode 38 can also be used Penetrate white light configuration (such as, if it is desired, so that layer 30 can be omitted).
In the configuration of the white light of the transmitting of layer 30 wherein (white light such as generated by the phosphor material in layer 30), along downwards (- Z) white light that direction emits from layer 30 can be reflected by dichroic filter layer 32 is used as backlight upwardly through pel array 24 Illumination (that is, layer 32 can help separate array 36 to external reflectance backlight).Layer 30 includes such as red quantum dot and green wherein In the configuration of quantum dot, dichroic filter 32 can be configured to reflect red from red quantum dot and green quantum dot Light and green light, to help separate array 36 to external reflectance backlight.By by the embedded photoluminescent material of backlight 42 (for example, layer 30 Material) be placed on the top of diffuser layers 34, light emitting diode 38 can be configured as towards array 36 light emitting diode (watt Piece) edge-emission than light more at the center of these units, to help to improve back lighting uniformity.
Fig. 3 is the top view of the exemplary light emitting diode array for backlight 42.As shown in figure 3, light emitting diode battle array Row 36 may include several rows and ordered series of numbers light emitting diode 38.Each light emitting diode 38 can be with corresponding unit (tiling area) 38C It is associated.The length D at the edge of unit 38C can be 2mm, 18mm, 1mm-10mm, 1mm-4mm, 10mm-30mm, be more than 5mm, is more In 10mm, more than 15mm, more than 20mm, less than 25mm, less than 20mm, less than 15mm, be less than 10mm or other suitable sizes. If desired, hexagon tiled arrays can be used and with the battle array of the light emitting diode 38 of other suitable array pattern tissues Row.In the array with rectangular element, the side that each unit can be with equal length is (for example, each unit can be with pros Shape shape, in the square profile, the cell edges of four equal lengths surround corresponding light emitting diode), or it is each Unit can be with the side (for example, rectangular shape of non-square) of different length.Wherein light emitting diode matrix 36 has several rows Configuration with Fig. 3 of ordered series of numbers square LED area (such as unit 38C) is only illustrative.
If desired, each unit 38C can have the light source formed by the array of LED core (for example, every At the center of a unit 38C, multiple individual light-emitting diodes 38 are arranged to the 2x2 clusters of array such as light emitting diode).Example Such as, having been formed by the 2x2 arrays of light emitting diode 38 (for example, four individual LED cores), in the most left of Fig. 3 Light source 38' in side and lowermost unit 38C.Diode 38 in light source 38' can be mounted on common package substrate, can On the printed circuit board base board extended across array 36, or it other can be used suitably to arrange and be mounted on array 36 In.In general, each unit 38C may include having single light emitting diode 38, a pair of of light emitting diode 38,2-10 a luminous Diode 38, at least four light emitting diode 38, at least eight light emitting diode 38, is less than 5 at least two light emitting diode 38 The light source 38' of light emitting diode 38 or other appropriate number of light emitting diodes.It herein sometimes can will wherein each unit There is 38C the exemplary arrangement of single light emitting diode 38 to be described as embodiment.However, this is only illustrative.Each unit 38C can have the light source 38 with any appropriate number of one or more light emitting diodes 38.
Fig. 4 is the side cross-sectional view of exemplary light emitting diode.The light emitting diode 38 of light emitting diode such as Fig. 4 can have There is terminal such as contact 58.Contact 58 can be electrically coupled to the conductive material of such as solder printed circuit or other substrates (for example, So that light emitting diode 38 can be soldered or otherwise be mounted in the array of array 36 of such as Fig. 3).Light emitting diode 38 can have n-type region 54 and p-type area 56.Region 54 and region 56 can be formed by the crystalline semiconductor materials of such as gallium nitride On substrate 52.Substrate 52 can be formed by the clear crystals material of such as sapphire or other suitable substrate materials.Reflector layer 50 (for example, distributed Bragg reflectors) may be formed on substrate 52, to help to guide the hair from diode 38 to side Penetrate light.
Fig. 5 is the side cross-sectional view of exemplary light emitting diode unit.As shown in figure 5, in light emitting diode matrix 36 Each light emitting diode (tile) 38C can be with the reflector of such as cavity reflection device 68.Reflector 68 can have square Shape (that is, the device encapsulation being square when viewed from above), or can have other suitable shapes, and can be by gold Belong to piece (for example, punched metal sheet), metallized polymeric film, the film metal on plastic carrier, polymer film or molding modeling Expect that the thin dielectric membrane stack of formation dielectric mirror (film interference mirror), white reflection film are (for example, by white ink layer on carrier Or other white layers on the polymer support of glossiness coating for being covered with such as glossiness polymer coating are formed Glossiness white polymer sheet, diffusing reflection white reflector or mirror-reflection white reflector) or other are suitable Reflector structure is formed.If desired, reflector 68 can be formed by cholesteric liquid crystal layers, wherein Bragg reflection rate is double by material Refractive index (refringence) and spacing control, and can be controlled for bandwidth to be single or chirp, or can be to use Have sufficiently large refringence (for example, n between adjacent layer>0.1) stacking (such as multiple polymeric layers or other materials of layer The stacking of the bed of material) interference light filter.The stacking of polymeric layer can be for example alternate polyethylene terephthalate (PET) The stacking or alternate polyethylene naphthalate (PEN) film of film and polymethyl methacrylate (PMMA) film and PMMA film It stacks.The metal trace that light emitting diode 38 can be soldered or otherwise be installed in printed circuit 60.In reflector 68 Center in opening can accommodate light emitting diode 38.Unit in reflector 68 can have the section with bending part to take turns Exterior feature is reflected the light from diode 38 upwards as back lighting 44 using helping.In an exemplary arrangement, roller can be used Polymer film (for example, film coated with thin dielectric film interference mirror surface or glossiness white reflective surface) is embossed (for example, the pattern structure on the roller of heating can be used to carry out hot forming to film).In thermoforming operations in each unit 38C It is formed after the curved wall of reflector 68, cross cutting tool or cleavable the opening for each light emitting diode 38 of other cutter devices Mouthful.
As shown in figure 5, the transparent configuration of such as transparent vault construction 70 may be formed on light emitting diode 38, to help Light of the cross direction profiles from light emitting diode 38.Vault construction 70 (can be made by transparent organic silicon globule or other transparent polymers For embodiment) it is formed.During operation, light emitting diode 38 emits light, which is reflected by vault construction 70 far from z axis. Transmitting light (such as light 80) from light emitting diode 38 can pass through the angle of the surface normal n relative to light emitting diode 38 A is spent to characterize.The light 80 for being parallel to Z-dimension traveling is parallel to surface normal n (angle A=0 °).It is parallel to X-Y plane traveling Light 80 is advanced perpendicular to Z-dimension and surface normal n (that is, A=90 °).It is advanced with being orientated relative to the other angles of surface normal n Light 80 characterized by the median of angle A.
Some light 80 at relatively large angles A be orientated and along direction Z from reflector 68 upwards reflection (see, for example, The light 82 reflected from reflector 68 as the light 84 of reflection).Other light 80 are orientated with smaller angle A.For example, light Line 90 is orientated with the smaller angle A value relative to surface normal n.The angle correlation optical filter or other layers at least partly reflected (such as layer 96) can be plugged between light diffuser 34 and light emitting diode 38 (and reflector 68), to help to be reflected down at least Some vertical light (A=0 °) or the almost vertical light (such as light 86) at the center of unit 38C, while allowing more Mostly angled light (light that optical filter 96 is hit at the position at the edge closer to chamber 38C), which passes through, arrives diffusing globe 34. For example, before reflecting along upward direction (+Z) as shown in light 94, such as the light of light 90 can by layer 96 to Outer and downward (along -Z direction) (as shown in light 92) reflects.
Layer 96 can be formed that (for example, layer 96 can be thin film interference filters, which filters by multiple dielectric layer 96' Light device is formed by the dielectric stack with alternate high refractive index and low-index material, the alternate high refractive index and low folding It penetrates rate material to be formed by silica, silicon nitride and/or other inorganic material, organic material layer, and/or can be by other electricity The layer of dielectric material formation and/or the layer for being used to form thin film interference filters.).In the case of an exemplary arrangement, layer There are 96', 3-6 layer 96' of 5 layers, more than 3 layer 96' or less than 10 layer 96'(as embodiment in 96).Also it can be used Such configuration, in the configuration, layer 96 is by one or more layers reflecting material (for example, single layer bulk material or two layers or more Multilayer material etc.) it is formed without formation thin film interference filters, or in the configuration, layer 96 includes one or more ontologies Coating and both the thin film interference filters formed by the stacking of dielectric layer.If desired, partially reflecting layer 96 can be by cholesteric Type liquid crystal layer is formed, and wherein Bragg reflection rate is controlled by material birefringence rate (refringence) and spacing, and can be single Or chirp for bandwidth control, or can be using between adjacent layer have sufficiently large refringence (for example, n> 0.1) the band logical interference light filter of the stacking (stacking of such as multiple polymeric layers or other materials layer) of layer.Polymeric layer Stack to be the stacking of for example alternate polyethylene terephthalate (PET) film and polymethyl methacrylate (PMMA) film Or the stacking of alternate polyethylene naphthalate (PEN) film and PMMA film.
In order to assist in ensuring that backlight 44 is uniform, light diffuser 34 and/or other structures in backlight 42 can be arranged There is optional light uniformization structure.For example, such as light blocking of structure 88 and the pattern of catoptric arrangement may be formed under layer 96 On surface.Structure 88 may include the pseudo-random patterns of point, ring, square pad, reflection and the pad for stopping light or be patterned With stop than the edge of unit 38C more in the center of unit 38C transmitting light other structures.Structure 88 can be by Pattern ink, reflect protrusion pattern, patterned angle associated film interference light filter layer, and/or other light reflections and Light scattering structure is formed, other light reflections and light scattering structure help to reflect and/or the center of absorptive unit 38C at axial direction Emit light, while the light in the edge of unit 38C being allowed to be upward through towards film 26.This help is reduced among unit 38C Hot spot, and eliminate the intensity variation that may be in addition generated when light diffuser 34 diffuses light from array 36.Structure 88 may be formed under layer 96 on (interior) surface, may be formed on individual substrate (for example, being additionally operable to the substrate of bearing bed 96 And/or different from supporting layer 96 substrate substrate), or may be formed at other suitable positions in back light unit 42.
During operation, the light from light emitting diode 38 emitted directly up in the center of unit 38C is at least Some (for example, light 86 of Fig. 5) will be reflected down by alternative construction 88 and/or by layer 96.The light of reflection will lateral (example Such as, by being reflected from cavity reflection device 68) it scatters.Light 82 of other light such as from light emitting diode 38 to emitted beside can be by chamber Reflector 68 reflects, and without being reflected by structure 88 or layer 96, and will be upward through diffusing globe 34 for use as backlight 44.Light 90 will It is reflected from layer 96 and reflector 68 before being upward through as light 94.
By making the light recycling in the immediate vicinity of each unit 38C while allowing attached at the edge of each unit 38C Close light directly through diffusing globe 34, the intensity of the light of the adjacent edges of each unit 38C can be relative in each unit 38C Immediate vicinity light intensity and increase.This assists in ensuring that backlight 44 will be equal on the surface of light diffuser 34 and backlight 42 Even.If desired, optical scatter 72 (for example, microballon, hollow microspheres, foaming material, and/or other optical scatters) can It is embedded in the polymer or other materials to form diffuser layers 34, to help to diffuse emitted light.Optical scatter 72 can With refractive index, which is different from constituting the refractive index of the polymer of diffusing globe 34.For example, the refractive index of particle 72 can be big In the refractive index for the polymer or other materials for being used to form layer 34, or the refractive index of diffusing globe 34 can be less than.In addition to including Except optical scatter 72 in diffusing globe 34 or replace including the optical scatter 72 in diffusing globe 34, scattering characteristics (for example, lug, ridge and/or other protrusions, groove, pit or other recess) may be formed at light diffuser 34 upper surface and/ Or on lower surface.In some configurations, it other than diffusing globe 34 or instead of diffusing globe 34, can be used in back light unit 42 Photoluminescent layers (for example, the photoluminescent layers 30 that can be formed by phosphor and/or quantum dot) come diffused light.
In the exemplary arrangement of Fig. 5, single structure 88 (for example, single pad) has been arranged in each unit 38C The top of light emitting diode 38.If desired, pad (circular pad, square weldering can be formed above each light emitting diode The pad of disk or other shapes) cluster.Pad in each cluster density (for example, the number of pads of per unit area and/ Or the area consumed by the pad of per unit area) can be according to change in location.For example, with the adjacent edges phase in the pad cluster Than each pad cluster can have more pads and/or the pad of bigger in the immediate vicinity of the pad cluster.Use gradual change Pad cluster (for example, be gathered in the pad of diode 38 top) of the structure such as with gradual change pad density can help smoothly Reduce the hot spot in unit 38C.If desired, can elliptical structure 88 (for example, the back light unit 42 without structure 88 In layer 96, lens 70 and/or other structures be configured as in the configuration for making the light uniformization of transmitting).
In the exemplary arrangement of Fig. 5, the partially reflecting layer of such as layer 96 (for example, thin metal layer, dielectric film layer Stacking, one or more other parts reflecting layer etc.) it is arranged between light diffuser 34 and light emitting diode 38.Layer 96 can be made It is formed on the lower surface of diffusing globe 34, can be embedded in diffusing globe 34 for coating, and/or can divide with diffusing globe 34 From.The light being reflected down from layer 96 can transit chamber reflector 68 reflect in upward direction.Thus the presence help of layer 96 increases Add for each light quantity or reflection, and thus the light pass through layer 34 before enhancing come from light emitting diode matrix 36 Transmitting light homogenization.If desired, the diffusion coating on diffusing globe 34 and/or other layers in back light unit 42 can be passed through To provide additional diffusion (for example, diffusion coating can be by having embedded optical scatter 72 on the upper surface of diffusing globe 34 Polymeric layer formed).If desired, the density of optical scatter 72 can gradual change.
In arranging the configuration to form partially reflecting layer 96 using thin film interference filters, layer 96 includes dielectric layer 96'. Layer 96 layer 96 ' can be such as different refractivity inorganic layer (for example, by such as aluminium oxide, silica, silicon nitride, titanium oxide, The alternate high refractive index layer and low-index layer that the materials such as other metal oxides, nitride and/or nitrogen oxides are formed). Layer 96' can be configured to form thin film interference filters, and in the thin film interference filters, the transmitted spectrum of layer 96 is according to incidence Angle changes.This causes can setted wavelength λ associated with the blue light emitted from diode 38 (from the wavelength X b) of such as Fig. 6 The transmission T of light changes according to the light relative to the incidence angle of layer 96.
As shown in fig. 6, when with angle A 1 (for example, close to 0 ° and being parallel to the surface normal n) of Fig. 5 and being exposed to from two poles When the light of pipe 38, layer 96 can have transmitted spectrum 110, and can have with angle (such as the 45 °) traveling of angle of approach A2 The transmitted spectrum 112 of light.Since the transmitted spectrum of layer 96 changes according to incidence angle, thus when by incidence angle A1 come when characterizing, in λ At least partly reflect (for example, transmission T will be less than specified rate) is worked as by incidence angle A2 or is more than A2 (A2 by the blue light at b More than A1) incidence angle when carrying out feature, above-mentioned blue light will less reflect (for example, transmission T will be greater than specified rate).Such as Fig. 6 Shown in curve, at least some blue lights emitted from the light emitting diode 38 in the center of unit 38C are (for example, at wavelength X b Light) it will be reflected, and thus (be recycled when being parallel to surface normal n), and in more deflection when emitting directly up The blue light emitted at angle A will be allowed to pass through in shock layer 96.This can help to reduce the hair in the center for unit 38C Penetrate the hot spot of light.
It helps to capture light by configuring the shape of the reflector 68 in each unit 38C, can in addition reduce hot spot, it is described Light is laterally out-diffused towards the periphery of each unit 38C from the light emitting diode 38 at the center of each unit 38C.
The exemplary arrangement of a part for the reflector 68 for covering illustrative unit 38C is shown in the perspective view of Fig. 7. As shown in the embodiment of figure 7, the reflector 68 of unit 38C can be configured such that each wall in the wall of reflector 68 along The periphery edge 38E of unit 38C rises to the identical height relative to printed circuit 60 (see, for example, the height H of Fig. 5).Cause This, along height (point on edge 38E and the print of the reflector 68 of each edge 38E between opposite unit turning 38D The distance between brush circuit 60) it is constant, and each edge of reflector 68 is followed along corresponding straight cell edges The straight line of 38E.It, will along the profile (for example, edge-to-edge profile 152) of the unit 38C of X or Y dimensions interception with the configuration (for example, at point of midway between the opposite corners endpoint of edge 38E) rises at the INTRM intermediate point along cell edges 38E To vertex 38E'.The cross section profile of the unit 38C diagonally intercepted (between corresponding turning 38D) (such as turns Angle is to corner profile 154) vertex will be risen at the 38D of unit turning.Each cell edges are to cell edges profile vertex (example Such as, edge mid-points 38E') it is located above printed circuit 60 with each unit turning to unit corner profile vertex (corresponding to side The corner point 38D of the endpoint of edge 38E) at identical distance (the height H of Fig. 5).
In the embodiment in fig. 8, the reflector 68 of unit 38C is configured such that reflector 68 along edge 38E's Identical height H is not risen at each point.On the contrary, edge 38E has the curved shape declined towards the midpoint of edge 38E. Specifically, each edge 38E is characterized by the maximum height H at turning 38D (endpoint of curved edge 38E), and is led to The minimum constructive height less than H in the middle of edge 38E is crossed to characterize.Thus, reflector 68 along confrontation unit turning 38D it Between the height of each edge 38E be not constant, and each edge of reflector 68 is followed along under cell edges 38E Catenary.Along the cross section profile of the reflector 68 of the unit 38C of Fig. 8 of X or Y dimensions interception (for example, cell edges are to unit Edge contour 152) it will rise to the vertex 38E' of height less than H at the INTRM intermediate point along cell edges 38E, and along turning The cross section profile (such as turning to corner profile 154) of the unit 38C of diagonal interception between the 38D of angle will be turned in unit The vertex of height H is risen at the 38D of angle (as the reflector 68 of the unit 38C of Fig. 7).Thus, each cell edges to list First edge contour vertex (point 38E') is located at than each unit turning to the closer printed circuit in unit profile vertex (point 38D) 60 Position at.
Fig. 9 is the top view of a part for array 36.The side of reflector 68 is intercepted and watched along direction 206 along line 204 Edge is to edge cross-sectional profile, the profile 152 of such as Fig. 7 and Fig. 8.It is intercepted along line 200 and watches reflector 68 along direction 202 Turning is to turning cross section profile, the profile 154 of such as Fig. 7 and Fig. 8.Marginal point 38E' is located at along direction X and Y away from light emitting diode At 38 distance ED, wherein ED is equal to the half of unit size (cell edges length) D.Inflection point 38D along dimension 208 be located at away from At the distance DD of light emitting diode 38, by relative to Fig. 9 X-axis line and Y-axis line dimension is defined with the axis that 45° angle degree is orientated 208。
Figure 10 and Figure 11 is the side cross-sectional view of the illustrative reflector arrangement of the unit 38C in array 36.
Arrangement shown in Figure 10 corresponds to the configuration of type shown in Fig. 7 that wherein edge 38E is straight.Reflector sections 68-1 corresponds to the part of reflector 68 passed through between light emitting diode 38 and the turning 38D of unit 38C, and with The 154 matched crooked outline of profile of the reflector 68 of the unit 38C of Fig. 7.Reflector sections 68-2 corresponds in light-emitting diodes The part of the reflector 68 passed through between pipe 38 and the edge mid-points 38E' of unit 38C, and with the unit 38C's of Fig. 7 152 matched crooked outline of profile.As shown in Figure 10, the point 38E' in the arrangement of the type and point 38D are all located at and print At the position of 60 place plane distance H of circuit.
Arrangement shown in Figure 11 corresponds to the configuration of type shown in Fig. 8, in fig. 8 in the configuration of shown type, side Edge 38E bendings, and decline downwards towards printed circuit 60 at the position between the 38D of turning.The reflector sections 68- of Figure 11 1 corresponds to the part of reflector 68 passed through between light emitting diode 38 and the turning 38D of unit 38C, and has and Fig. 8 Unit 38C reflector 68 154 matched crooked outline of profile.Reflector sections 68-2 corresponds in light emitting diode 38 The part of the reflector 68 passed through between the edge mid-points 38E' of unit 38C, and with the profile with the unit 38C of Fig. 8 152 matched crooked outlines.The corner point 38D of unit 38C in the arrangement of the type is located to be put down with where printed circuit 60 At the position of face distance H, and such as edge mid-points of point 38E' are located at distance H', and distance H' is less than and printed circuit 60 Place plane distance H.
If desired, reflector 68 can have Fresnel-type shape, in the Fresnel-type shape, reflector 68 has a series of Each concentric ring in concentric ring 68-3, this series of concentric ring 68-3 has and such as profile of profile 152 or profile 154 The matched profile of corresponding part.Reflector 68 is allowed to print using Fresnel reflection device structure (reflection Fresnel structure) The distance between circuit 60 and layer 96 are minimized, because between the reflector 68 in the arrangement of the type and printed circuit 60 Largest interval can be less than Fig. 7 and Fig. 8 shown in type configuration in reflector 68 and printed circuit 60 between maximum Interval.
Figure 12 and Figure 13 shows how the cross section profile of reflector 68 can have ellipse or parabola branch to enhance hair Penetrate the uniformity of light 44.
It shows to use elliptical shape to the part of the cross section profile of the reflector 68 in unit 38C in Figure 12.Such as figure Shown in 12, light emitting diode 38 is associated with the virtual image at position F1 (reflection position of light emitting diode 38 in layer 96).It should Position can form a focus in two focuses of ellipse, which is used to define the part of the profile of reflector 68. Illustrative ellipse is shown in the embodiment of Figure 12.Ellipse 220 has the first focus F1 and the second focus F2.Ellipse 222 has There are the first focus F1 and the second focus F2'.Focus F2 and focus F2' can be located in the plane of layer 96.The part 220' of ellipse 220 The edge-to-edge profile of reflector 68, the profile 152 of such as Fig. 7 and Fig. 8 can be formed.The part 222' of ellipse 222 can shape At the edge-to-edge profile of reflector 68, the profile 154 of such as Fig. 7 and Fig. 8.
It shows to use parabolic shape to the part of the cross section profile of the reflector 68 in unit 38C in Figure 13.Such as figure Shown in 13, reflector 68 can have include parabola branch cross section profile (for example, edge-to-edge cross section profile and/or turning Angle is to turning cross section profile).Point PF1 can be related to the parabolical focus of shape of a part of profile of reflector 68 is limited Connection.The parabolical axis of symmetry can be orientated (as shown in axis 242) relative to X-axis line with non-zero angle, or can have it He is suitably orientated (see, for example, horizontal axis 240).If desired, the parabolical axis of symmetry and parabolical focus can have There are other suitable positions (see, for example, focus PF2).
Ray-traces model is verified, and the cartouche and parabolic profile of reflector 68 can help come from The light of light emitting diode 38 is evenly distributed on the surface of each unit 38C so that each unit 38C emits uniform backlight Illumination 44.If desired, reflector 68 can have other shapes.Cartouche and parabola are used to the part of reflector 68 Profile is illustrative.
Show can be coupled to the illustrative layer in backlight 42 in Figure 14, Figure 15, Figure 16 and Figure 17.
Optical layer (such as optical film 26) in backlight 42 may include thin film interference filters layer.These layers can be by alternately rolling over Penetrate inorganic and/or organic dielectrics stacking (see, for example, dielectric stack of the layer 300 of Figure 14) formation of rate.Film is dry Broadband (white light) reflector (sometimes referred to as speculum or partially reflecting mirror) can be formed by relating to optical filter, and/or can be formed The optical filter of the light of some colors more than the light of other colors of reflectivity is (for example, being formed has uneven visible reflectance spectrum Optical filter).Thin film interference filters can be configured as the non-reflected light of transmission (such as so that in the wavelength not reflected There is down high light transmission).The stacking of the layer 300 of dielectric stack such as Figure 14 may be formed on polymer or glass substrate, And/or it can be combined with the material layer (for example, such as thin film interference filters coating) for executing other functions.
If desired, brightness enhancement film (sometimes referred to as prism film, light collimation layer or light collimate layers of prisms) can be used for collimated light 44.Figure 15 is the side cross-sectional view of illustrative prism film.As shown in figure 15, prism film 302 has series of parallel ridge 304, should Series of parallel ridge 304 extends in the page and has triangular cross-sectional shape.Ridge 304 can face upward towards viewer (to Outside) to help towards viewer's collimated light 44.
The illustrative micro-lens arrays layer 306 of micro-lens arrays layer such as Figure 16 can be used for making light 44 to spread and homogenize. Layer 306 can be relatively thin, so as not to which the thickness of display 14 can be excessively increased.For example, layer 306 can be 5 microns to 100 microns Thick, at least 10 microns of thickness are less than 150 microns of thickness.In the embodiment of figure 16, upper (facing out) surface 309 tool of layer 306 There is the convex lens array of such as convex lenticule 308, and (inward-facing) surface 311 has such as recessed lenticule under layer 306 308 concave mirror arrangements.In general, any one surface in the surface of layer 306 can be plane, in the surface of layer 306 Any one surface can have any one surface in the surface of convex lens and/or layer 306 that can have concavees lens.Figure 16's Configuration is only illustrative.Lenticule 308 can have about 15 microns to 25 microns, at least 10 microns, the transverse direction less than 30 microns Size or other suitable lateral dimensions, and can be with about 3 microns to 20 microns of height.Non-uniform patterns can be used for lenticule 308 to reduce Moire effect.
Optical layer 26 may include one or more light diffuser layers.In the exemplary arrangement of Figure 17, light diffuser layer 310 (light diffuser layer 310 is referred to alternatively as diffusing globe or diffuser layers sometimes) has the polymeric substrates of such as substrate 312, light scattering Particle 314 (for example, titan oxide particles) has been embedded in substrate 312.If desired, other diffusing globes can be used to configure.
It is shown in FIG. 18 one or more layers of such as these layers being attached in backlight 42 and is used for display 14 Exemplary arrangement.As shown in the exemplary arrangement of Figure 18, back light unit 42 may include such as light emitting diode matrix 36 Light source.Light (for example, blue light of the blue light emitting diode in array 36) from array 36 is upward through along +Z direction The layer being stacked on 36 top of array, and back light unit 42 is left as the back lighting 44 for pel array 24.
The backlight 42 of the display 14 of Figure 18 can be with the diffusing globe of such as diffuser layers 310.Diffuser layers 310 can be located at 36 top of array.The lower surface of diffuser layers 310 can be coated with thin film interference filters 320.Optical filter 320 can be by alternating refractive Stacking (see, for example, dielectric stack of Figure 14) formation of the dielectric layer of rate, the stacking of the dielectric layer of the alternating refractive index It has been configured as partly transmiting and partly reflects blue light.For example, (the optical filter 320 of optical filter 320 at blue wavelength Sometimes blu-ray reflection optical filter or part reflecting filter are referred to alternatively as) reflectivity can between 50% and 90%, at least 60%, be less than 80% or other suitable values (reflected for example, optical filter can be to blue light components transparent fractional transmission blue Optical filter).At red wavelength and green wavelength, which can have the reflection more greater or lesser than at blue wavelength Rate.
The photoluminescent layers of such as yellow phosphorescence bisque 316 can be used for will the light from the light emitting diode of array 36 extremely Few (for example, the blue light of blue light emitting diode in array 36 is at least some) are converted into feux rouges and green light, from And layer 316 is allowed to emit white light back lighting 44.Some in feux rouges and green light can be emitted downwards.Feux rouges and green light in order to prevent Transverse leakage, the thin film interference filters of such as optical filter 318 may be formed on the lower surface of layer 316.Optical filter 318 can be by It has been configured as that blue light is made to pass through while reflecting the dielectric stack of feux rouges and green light (for example, the dielectric stack of Figure 14 300) it is formed (for example, optical filter 318 can be transmitting blue and the red thin film interference filters with green of reflection).
Micro-lens arrays layer 306 (Figure 16) can be located at 316 top of layer, and can be used for making light 44 to scatter, to prevent hot spot.
It can be used one or more prism film 302 towards 20 collimated light 44 of viewer.In the embodiment of figure 18, display There are two prism films 302 for 14 tools.The prism 302 of film can be oriented to vertically.For example, if the prism of lower prism film is parallel to X-axis line, then above the prism of prism film can be parallel to Y-axis line.Reflective polarizer 322 can be located at 302 top of prism film to help to make Light recycles, and to improve backlight efficiency.Reflective polarizer 322 can be such that the light polarized along given axis linearity passes through, The light of (recycling) cross-polarization is reflected simultaneously.
According to embodiment, a kind of display is provided, which includes multiple pixels；And backlight, the backlight quilt It is configured to generate the back lighting for multiple pixels, which includes：Light source, the light source are configured as transmitting light and are arranged At multiple corresponding units；And reflector, the reflector reflect the light from light source by multiple pixels, reflector is in each list There is cross section profile, the cross section profile are carried in member selected from the part for the group being made of following item：Parabola branch and ellipse Part.
According to another embodiment, pixel includes pel array, and light source includes the two-dimensional array of light source, the light source It is arranged to the two-dimensional array of corresponding units.
According to another embodiment, each light source has at least one light emitting diode.
According to another embodiment, display includes light diffuser layer, which is plugged on light emitting diode Between array and pel array；And partially reflecting layer, the partially reflecting layer are plugged on light diffuser layer and light emitting diode battle array Between row.
According to another embodiment, partially reflecting layer includes the partially reflecting layer selected from the group being made of following item：Tool The heap of the polymer film of the angled correlation thin film interference filters of optical transmission characteristics, cholesteric liquid crystal layers and alternating refractive index It is folded.
According to another embodiment, display includes printed circuit, and light emitting diode is installed to printed circuit, each In unit, four straight edges of the reflector with the corresponding light emitting diode in light emitting diode, and along Each of each edge in four edges point is separated by with printed circuit at a distance from common.
According to another embodiment, display includes printed circuit, and light emitting diode is installed to printed circuit, each In unit, reflector tool is there are four turning and four curved edges, and each curved edge in four curved edges is at four Extend between corresponding a pair of of turning in turning, each curved edge in four curved edges has is separated by the with printed circuit The endpoint of one distance and the midpoint for being separated by second distance with printed circuit, the second distance are less than the first distance.
According to another embodiment, display includes light diffuser layer, the light diffuser layer be plugged on pel array with Between the array of light emitting diode, partially reflecting layer includes the coating on light diffuser layer, and reflector includes selected from by following The reflector for the group that item is constituted：Glossiness white reflector, diffusing reflection white reflector, mirror-reflection white reflector, shape At the stacking of the polymer film of the stacking of the thin film dielectric layer of film interference mirror, cholesteric liquid crystal layers and alternating refractive index.
According to another embodiment, reflector includes the reflector selected from the group being made of following item：It is glossiness white Color reflector, diffusing reflection white reflector or mirror-reflection white reflector.
According to another embodiment, reflector includes the reflector selected from the group being made of following item：It is dry to form film Relate to the stacking of the polymer film of the stacking of the thin film dielectric layer of mirror, cholesteric liquid crystal layers and alternating refractive index.
According to another embodiment, light emitting diode includes blue light emitting diode, and display includes being plugged on Partially reflecting layer between light emitting diode and pel array.
According to another embodiment, each light source includes at least two light emitting diodes.
According to embodiment, a kind of display is provided, which includes pel array；And backlight, backlight by with It is set to the back lighting generated for pel array, backlight includes the two-dimensional array of light emitting diode, the light emitting diode Each of unit includes at least one light emitting diode for being configured as transmitting light；And reflector, the reflector pass through picture Pixel array reflects the light from light emitting diode, and reflector has cross section profile, the cross section profile band promising in each cell Parabolical part.
According to another embodiment, display includes light diffuser layer, the light diffuser layer be plugged on pel array with Between light emitting diode matrix, light emitting diode is configured as transmitting blue light；And the coating on light diffuser layer, the coating Form the thin film interference filters with angular dependent transmissive.
According to another embodiment, light emitting diode is configured as transmitting blue light.
According to another embodiment, display includes printed circuit, and light emitting diode is installed to printed circuit, each In unit, reflector tool is there are four turning and has four straight edges extended between turning, and along four straight edges In each of each straight edge point and printed circuit be separated by a distance from common.
According to another embodiment, display includes printed circuit, and light emitting diode is installed to printed circuit, each In unit, reflector tool is there are four turning and four curved edges, and each curved edge in four curved edges is at four Extend between corresponding a pair of of turning in turning, each curved edge in four curved edges has is separated by the with printed circuit The endpoint of one distance and the midpoint for being separated by second distance with printed circuit, the second distance are less than the first distance.
According to another embodiment, reflector includes the layer selected from the group being made of following item：It is dry with film is formed Relate to the layer of the stacking of the dielectric layer of mirror and glossiness white layer.
According to another embodiment, light emitting diode includes white light emitting diodes.
According to embodiment, a kind of display is provided, which includes pel array；And backlight, the backlight quilt It is configured to generate the back lighting for pel array, backlight includes：The two-dimensional array of light emitting diode, the light emitting diode quilt It is configured to transmitting light and is arranged to the two-dimensional array of corresponding units；And reflector, the reflector are reflected by pel array Light from light emitting diode, reflector have cross section profile, the portion of the promising ellipse of the cross section profile band in each cell Point.
According to another embodiment, light emitting diode includes blue light emitting diode, and display includes light diffuser layer, The light diffuser layer is plugged between pel array and light emitting diode matrix；And the coating on light diffuser layer, the painting Layer forms the thin film interference filters with angular dependent transmissive, and reflector includes the layer selected from the group being made of following item：Tool Have to form the layer of the stacking of the dielectric layer of film interference mirror and glossiness white layer.
According to embodiment, a kind of display is provided, which includes pixel, which is configured as display figure Picture；And backlight, the backlight are configured as generating the back lighting for pixel, backlight includes the two dimension of light emitting diode Array, each of the light emitting diode include at least one light emitting diode for being configured as transmitting light；With bending The reflector of cross section profile, reflector reflect the light from light emitting diode by pel array；And in pixel and luminous two Micro-lens arrays layer between the two-dimensional array of pole pipe unit.
According to another embodiment, backlight be included in micro-lens arrays layer and light emitting diode two-dimensional array it Between phosphor layer, diffuser layers between phosphor layer and the two-dimensional array of light emitting diode and in diffusing globe The first film interference light filter on layer and the second thin film interference filters on phosphor layer.
According to another embodiment, backlight is included between phosphor layer and the two-dimensional array of light emitting diode Diffuser layers.
According to another embodiment, backlight includes the first film interference light filter in diffuser layers and in phosphor powder The second thin film interference filters on layer.
According to embodiment, light emitting diode includes the blue light emitting diode for being configured as transmitting blue light, the first film Interference light filter is configured as partly transmiting blue light, the second thin film interference filters be configured as transmission blue light and in response to Blue light and be reflected in the feux rouges and green light generated in phosphor layer, and backlight is included between pixel and micro-lens arrays layer First prism film and the second prism film and the reflective polarizer between the second prism film and pixel.
According to another embodiment, the first film interference light filter is configured as partly transmiting blue light.
According to another embodiment, the second thin film interference filters are configured as transmission blue light, and in response to blue light And it is reflected in the feux rouges and green light generated in phosphor layer.
According to another embodiment, backlight is included in the first prism film and second between pixel and micro-lens arrays layer Prism film.
According to another embodiment, backlight is included in the reflective polarizer between the second prism film and pixel.
Aforementioned is only illustrative, and can various modification can be adapted to described embodiment.It can be independently or to appoint Foregoing embodiments are implemented in what combination.

Claims (20)

1. a kind of display, including：
Multiple pixels；And
Backlight, the backlight is configured as generating the back lighting for the multiple pixel, wherein the backlight includes：
Light source, the light source are configured as transmitting light and are arranged to multiple corresponding units；
And
Reflector, the reflector reflects the light from the light source by the multiple pixel, wherein the reflector There is cross section profile, the cross section profile are carried in each cell selected from the part for the group being made of following item：Parabolic portion Point and oval shaped portion.
2. display according to claim 1, wherein the pixel includes pel array, and the wherein described light source includes The two-dimensional array of the light source, the light source are disposed in the two-dimensional array of the corresponding units.
3. display according to claim 2, wherein each light source has at least one light emitting diode.
4. display according to claim 3 further includes light diffuser layer, the light diffuser layer is plugged on described shine Between diode array and pel array；And
Partially reflecting layer, the partially reflecting layer are plugged between the light diffuser layer and the light emitting diode matrix.
5. display according to claim 4, wherein the partially reflecting layer includes selected from the group being made of following item Partially reflecting layer：Thin film interference filters, cholesteric liquid crystal layers and alternating refractive index with angle correlation optical transmission characteristics The stacking of polymer film.
6. display according to claim 5 further includes printed circuit, wherein the light emitting diode is installed to the print Brush circuit, wherein the reflector has the corresponding light emitting diode in the light emitting diode in each unit Four straight edges, and be wherein separated by altogether with the printed circuit along each of each edge in four edges point Same distance.
7. display according to claim 5 further includes printed circuit, wherein the light emitting diode is installed to the print Brush circuit, wherein there are four turning and four curved edges, four curved edges for the reflector tool in each unit In corresponding a pair of of turning of each curved edge in four turnings between extend, wherein in four curved edges Each curved edge have with the printed circuit be separated by the first distance endpoint and with the printed circuit be separated by second away from From midpoint, the second distance be less than first distance.
8. display according to claim 5, wherein the partially reflecting layer includes the painting on the light diffuser layer Layer, wherein the reflector includes the reflector selected from the group being made of following item：Glossiness white reflector, diffusing reflection are white Color reflector, mirror-reflection white reflector, the stacking of thin film dielectric layer for forming film interference mirror, cholesteric liquid crystal layers, And the stacking of the polymer film of alternating refractive index.
9. display according to claim 3, wherein the light emitting diode includes blue light emitting diode, and wherein The display further includes the partially reflecting layer being plugged between the light emitting diode and the pel array.
10. a kind of display, including：
Pel array；And
Backlight, the backlight is configured as generating the back lighting for the pel array, wherein the backlight includes：
The two-dimensional array of light emitting diode, each of described light emitting diode include being configured as transmitting light extremely A few light emitting diode；And
Reflector, the reflector reflects the light from the light emitting diode by the pel array, wherein the reflection Device has cross section profile, the promising parabolical part of cross section profile band in each cell.
11. display according to claim 10, further includes：
Light diffuser layer, the light diffuser layer are plugged between the pel array and light emitting diode matrix, wherein described Light emitting diode is configured as transmitting blue light；And
Coating on the light diffuser layer, the coating form the thin film interference filters with angular dependent transmissive.
12. display according to claim 11 further includes printed circuit, wherein the light emitting diode be installed to it is described Printed circuit, wherein the reflector tool is there are four turning and with four extended between the turning in each unit A straight edge, and wherein put along each of each straight edge in four straight edges and be separated by altogether with the printed circuit Same distance.
13. display according to claim 11 further includes printed circuit, wherein the light emitting diode be installed to it is described Printed circuit, wherein there are four turning and four curved edges, four curved edges for the reflector tool in each unit Extend between corresponding a pair of of turning of each curved edge in four turnings in edge, wherein four curved edges In each curved edge have be separated by the endpoint of the first distance with the printed circuit and be separated by second with the printed circuit The midpoint of distance, the second distance are less than first distance.
14. display according to claim 11, wherein the reflector includes the layer selected from the group being made of following item： The layer of stacking with the dielectric layer for forming film interference mirror and glossiness white layer.
15. display according to claim 10, wherein the light emitting diode includes white light emitting diodes.
16. a kind of display, including：
Pel array；And
Backlight, the backlight is configured as generating the back lighting for the pel array, wherein the backlight includes：
The two-dimensional array of light emitting diode, the light emitting diode are configured as transmitting light and are disposed in the two dimension of corresponding units In array；And
Reflector, the reflector reflects the light from the light emitting diode by the pel array, wherein the reflection Device has cross section profile, the part of the promising ellipse of cross section profile band in each cell.
17. display according to claim 16, wherein the light emitting diode includes blue light emitting diode, it is described aobvious Show that device further includes：
Light diffuser layer, the light diffuser layer are plugged between the pel array and the light emitting diode matrix；And
Coating on the light diffuser layer, the coating form the thin film interference filters with angular dependent transmissive, Described in reflector include selected from the layer of group being made of following item：Stacking with the dielectric layer for forming film interference mirror Layer and glossiness white layer.
18. a kind of display, including：
Pixel, the pixel are configured as display image；And
Backlight, the backlight is configured as generating the back lighting for the pixel, wherein the backlight includes：
The two-dimensional array of light emitting diode, each of described light emitting diode include being configured as transmitting light extremely A few light emitting diode；
Reflector with bending sections profile, the reflector come from the light emitting diode by pel array reflection Light；And
Micro-lens arrays layer between the pixel and the two-dimensional array of the light emitting diode.
19. display according to claim 18, wherein the backlight further includes：
Phosphor layer between the micro-lens arrays layer and the two-dimensional array of the light emitting diode；
Diffuser layers between the phosphor layer and the two-dimensional array of the light emitting diode；And
The first film interference light filter in the diffuser layers and the second film interference on the phosphor layer filter Device.
20. display according to claim 19, wherein the light emitting diode includes the indigo plant for being configured as transmitting blue light Light emitting diode, wherein the first film interference light filter is configured as partly transmiting the blue light, wherein described Two thin film interference filters are configured as transmiting the blue light and reflex response is in the blue light and in the phosphor layer The feux rouges and green light of generation, and the wherein described backlight further includes：
The first prism film between the pixel and the micro-lens arrays layer and the second prism film；And
Reflective polarizer between second prism film and the pixel.
CN201810173014.1A 2017-03-03 2018-03-02 Display with direct-type backlight unit Pending CN108535912A (en)

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KR102172907B1 (en) 2020-11-02
WO2018160304A1 (en) 2018-09-07

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