CN108493168A - A kind of multi-cavity encapsulating structure of electrical isolation - Google Patents
A kind of multi-cavity encapsulating structure of electrical isolation Download PDFInfo
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- CN108493168A CN108493168A CN201810524238.2A CN201810524238A CN108493168A CN 108493168 A CN108493168 A CN 108493168A CN 201810524238 A CN201810524238 A CN 201810524238A CN 108493168 A CN108493168 A CN 108493168A
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- 238000002955 isolation Methods 0.000 title claims abstract description 46
- 239000000919 ceramic Substances 0.000 claims abstract description 44
- 238000012546 transfer Methods 0.000 claims abstract description 40
- 208000002925 dental caries Diseases 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims description 50
- 230000008878 coupling Effects 0.000 claims description 22
- 238000010168 coupling process Methods 0.000 claims description 22
- 238000005859 coupling reaction Methods 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims description 18
- 230000008054 signal transmission Effects 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 230000006854 communication Effects 0.000 abstract description 20
- 238000004891 communication Methods 0.000 abstract description 15
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The present invention relates to a kind of multi-cavity encapsulating structure of electrical isolation, includes two or more cavitys for carrying out electrical isolation by ceramic dielectric, the coupled transfer structure realized and communicated between the affiliated power domain of two cavity of arbitrary neighborhood is provided in the ceramic dielectric.The multi-cavity encapsulating structure of the electrical isolation of the present invention, the electrical isolation between cavity is carried out using ceramic dielectric, by coupled transfer structure, realizes the communication between neighboring chambers, good insulation preformance can take into account demand of both the communication of high reliability number xegregating unit and electrical isolation simultaneously.
Description
Technical field
The present invention relates to integrated antenna package fields, and in particular to a kind of multi-cavity encapsulating structure of electrical isolation.
Background technology
The number xegregating unit such as power supply power supply, bus interface and gate driving allows multiple power domains to coexist and communicate, and is
Prevent that data are disturbed, resist high-voltage transient and tolerance high pressure, it is necessary to carry out electrical isolation.In military and aircraft industry application
Field ensures high reliability and the long-life of high-grade component to completely cut off steam dust, prevent from aoxidizing, it is necessary to use gas
Sealing dress.Common plastic packaging belongs to non-airtight encapsulation, and Metal Packaging, ceramic package and metal-ceramic package belong to airtight
Encapsulation, inside are cavity structure.Therefore, for the high reliability packaging of digital xegregating unit, how to ensure air-tightness and realize
Communication and electrical isolation between different cavitys are urgent problems.
A kind of lamination-type two-chamber encapsulating structure is proposed application No. is the United States Patent (USP) of US9209121B2, above and below the structure
The chip of cavity is connected to same packaging pin by bonding line, realizes the communication of upper and lower cavities, improves integrated level.Application
Number propose a kind of dual chamber three-dimension packaging structure for the Chinese patent of CN204696114U, which uses metallic shield partition board
Upper and lower cavities are subjected to signal shielding, by coaxial vertical interconnection structure the circuit of upper and lower cavities is communicated, improves
The integrated level of system.Above-mentioned encapsulating structure solves the problems, such as two-chamber communication and level of integrated system, but two-chamber communication uses
The method of the direct-connected metal of bonding line cannot achieve the purpose that electrical isolation between two cavitys.
It can be seen that although existing two-chamber encapsulating structure can realize level Hermetic Package, cannot take into account simultaneously highly reliable
Property number xegregating unit communication and electrical isolation of both demand.
Invention content
The technical problem to be solved by the present invention is to the encapsulating structures for the prior art cannot take into account high reliability simultaneously
Demand of both digital xegregating unit communication and electrical isolation, provides a kind of multi-cavity encapsulating structure of electrical isolation.
The technical solution that the present invention solves above-mentioned technical problem is as follows：A kind of multi-cavity encapsulating structure of electrical isolation, including by
Ceramic dielectric carries out two or more cavitys of electrical isolation, is provided in the ceramic dielectric and realizes two chamber of arbitrary neighborhood
The coupled transfer structure communicated between the affiliated power domain of body.
The beneficial effects of the invention are as follows：The multi-cavity encapsulating structure of the electrical isolation of the present invention carries out cavity using ceramic dielectric
Between electrical isolation, the communication between neighboring chambers is realized by coupled transfer structure, good insulation preformance can take into account simultaneously
High reliability number xegregating unit communicates and electrical isolation both sides demand.
Based on the above technical solution, the present invention can also be improved as follows.
Further, the coupled transfer structure using transformer coupled principle or giant magnetoresistance coupling principle, using electric energy and
Energy mutually converts realization signal transmission between magnetic energy.
Advantageous effect using above-mentioned further scheme is：Using transformer coupled principle or giant magnetoresistance coupling principle, profit
Realization signal transmission is mutually converted with energy between electric energy and magnetic energy, and communication process need not use the direct-connected metal of bonding line
Method can effectively achieve the purpose that electrical isolation between two cavitys.
Further, the coupled transfer structure is transformer coupled transmission structure, including is arranged at intervals on the ceramics and is situated between
The first wire coil in matter and the second wire coil.
Advantageous effect using above-mentioned further scheme is：Using spaced first wire coil and the second metal wire
Circle, two coils need not use metal connection can be achieved with communicating, and effectively reached and have been situated between by ceramics between adjacent two cavity
Matter carries out the purpose of electrical isolation.
Further, the coupled transfer structure is giant magnetoresistance coupled transfer structure, including is arranged at intervals on the ceramics and is situated between
Third wire coil in matter and giant magnetoresistance.
Advantageous effect using above-mentioned further scheme is：Using spaced third wire coil and giant magnetoresistance,
Metal connection need not be used to can be achieved with communicating between three wire coils and giant magnetoresistance, effectively reached between adjacent two cavity
The purpose of electrical isolation is carried out by ceramic dielectric.
Further, the coupled transfer structure realizes signal transmission using capacitive coupling transmission principle, using electric field change.
Advantageous effect using above-mentioned further scheme is：Using capacitive coupling transmission principle, and it is real using electric field change
Existing signal transmission, the method that communication process need not use the direct-connected metal of bonding line can effectively reach electrical between two cavitys
The purpose of isolation.
Further, the coupled transfer structure is capacitive coupling transmission structure, including is spaced and is arranged in parallel in the pottery
The first metal polar plate in ceramic dielectric and the second metal polar plate.
Advantageous effect using above-mentioned further scheme is：Using two metal polar plates disposed in parallel, electricity can be utilized
Hold coupled transfer principle, transmits signal using the variation of electric field between two metal polar plates, be not required between two metal polar plates
It to use metal connection can be achieved with communicating, effectively reach and electrical isolation is carried out by ceramic dielectric between adjacent two cavity
Purpose.
Further, it is equipped with the coupled transfer structure in the ceramic dielectric between two cavity of arbitrary neighborhood.
Advantageous effect using above-mentioned further scheme is：It is respectively provided in ceramic dielectric between two cavity of arbitrary neighborhood
The communication between two cavity of arbitrary neighborhood may be implemented in coupled transfer structure.
Further, IC chip is equipped in the cavity, described IC chip one end is connected with and outside reality
The outer package lead now communicated, the other end are connected with the coupled transfer structure communicated between neighboring chambers is realized.
Further, the cavity includes the groove structure formed by the ceramic dielectric and is encapsulated in the groove structure
The metal cover board of open end.
Advantageous effect using above-mentioned further scheme is：The cavity is formed using groove structure and metal cover board, it can
The electric elements being convenient for changing in cavity with as needed opening cavity or installation and maintenance etc..
Further, the cavity is two and is set as up-down structure or tiled configuration.
Advantageous effect using above-mentioned further scheme is：Arrangement shape that can be according to package requirements to select cavity different
Formula.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of embodiment of multi-cavity encapsulating structure that the present invention is electrically insulated；
Fig. 2 is the structural schematic diagram for the multi-cavity encapsulating structure another embodiment that the present invention is electrically insulated；
Fig. 3 is a kind of structural schematic diagram of embodiment of coupled transfer structure in the present invention；
Fig. 4 is the structural schematic diagram of coupled transfer structure another embodiment in the present invention.
In attached drawing, parts list represented by the reference numerals are as follows：
1, ceramic cartridge；11, the first cavity；12, the second cavity；13, the first IC chip；14, the second integrated electricity
Road chip；15, PAD pads；16, bonding line；17, line conduction band is crossed；18, the first metal cover board；19, the second metal cover board；
2, transformer coupled transmission structure；21, the first wire coil；22, the second wire coil；
3, giant magnetoresistance coupled transfer structure；31, third wire coil；32, giant magnetoresistance；
4, capacitive coupling transmission structure；41, the first metal polar plate；42, the second metal polar plate；
5, outer package lead；6, the first power domain；7, second source domain.
Specific implementation mode
The principle and features of the present invention will be described below with reference to the accompanying drawings, and illustrated embodiment is served only for explaining the present invention,
It is not intended to limit the scope of the present invention.
As Figure 1-Figure 4, the multi-cavity encapsulating structure of a kind of electrical isolation of the present embodiment, including electricity is carried out by ceramic dielectric
Air bound from two or more cavitys, be provided in the ceramic dielectric realize the affiliated power domain of two cavity of arbitrary neighborhood it
Between the coupled transfer structure that communicates.
Coupling is also known as commissure, and coupling refers to the input and output of two or more circuit elements or circuit network etc.
Between exist be fitted close with influence each other, and pass through interaction from a side to the other side transmission energy the phenomenon that.Specific coupling
When conjunction phenomenon is that two or more circuits constitute a network, wherein the current or voltage of on a rare occasion a circuit changes,
Influencing other circuits, there is a phenomenon where respective changes, that is to say, that by the effect of coupling, by a certain circuit or electric elements
Energy or information are transferred in other circuits or electric elements.Generally, coupling refer to just two entities interdepend in
The measurement of other side.
In the present embodiment, by the way that coupled transfer structure is arranged in the ceramic dielectric of insulation, it will be able to realize adjacent two
Communication between a affiliated power domain of cavity, good insulation preformance, can take into account simultaneously high reliability number xegregating unit communication and
Demand of both electrical isolation.
In the present embodiment, specifically there are three types of embodiments for coupled transfer structure, as follows respectively.
Embodiment one：The coupled transfer structure uses transformer coupled principle, utilizes energy between electric energy and magnetic energy
Mutually convert realization signal transmission.Using transformer coupled principle, reality is mutually converted using energy between electric energy and magnetic energy
Existing signal transmission, the method that communication process need not use the direct-connected metal of bonding line can effectively reach electrical between two cavitys
The purpose of isolation.
Specifically, the coupled transfer structure is transformer coupled transmission structure 2, including it is arranged at intervals on the ceramics and is situated between
The first wire coil 21 in matter and the second wire coil 22.Using 21 and second metal wire of spaced first wire coil
Electric energy in power domain where it is become magnetic energy using the first wire coil 21, is transmitted to from the first wire coil 21 by circle 22
Second wire coil 22, power domain where the second wire coil 22 converts the magnetic energy received to electric energy again and is transferred to are real
The transmission of existing signal need not use metal connection to can be achieved with leading between the first wire coil 21 and the second wire coil 22
Letter has effectively achieved the purpose that carry out electrical isolation by ceramic dielectric between adjacent two cavity.
Embodiment two：The coupled transfer structure uses giant magnetoresistance coupling principle, utilizes energy between electric energy and magnetic energy
Mutually convert realization signal transmission.Using giant magnetoresistance coupling principle, reality is mutually converted using energy between electric energy and magnetic energy
Existing signal transmission, the method that communication process need not use the direct-connected metal of bonding line can effectively reach electrical between two cavitys
The purpose of isolation.
Specifically, the coupled transfer structure is giant magnetoresistance coupled transfer structure 3, including it is arranged at intervals on the ceramics and is situated between
Third wire coil 31 in matter and giant magnetoresistance 32.Using spaced third wire coil 31 and giant magnetoresistance 32, is utilized
Three wire coils 31 convert the electric energy of power domain where it to magnetic energy, and giant magnetoresistance 32 is transmitted to from third wire coil 31, huge
Power domain where magnetic resistance 32 converts the magnetic energy received to electric energy again and is transferred to, realizes the transmission of signal, third metal wire
Metal connection need not be used to can be achieved with communicating between circle 31 and giant magnetoresistance 32, effectively reach and passed through between adjacent two cavity
Ceramic dielectric carries out the purpose of electrical isolation.
Embodiment three：The coupled transfer structure realizes signal using capacitive coupling transmission principle, using electric field change
Transmission.Realize that signal transmission, communication process need not use bonding line using capacitive coupling transmission principle, and using electric field change
The method of direct-connected metal can effectively achieve the purpose that electrical isolation between two cavitys.
Specifically, the coupled transfer structure is capacitive coupling transmission structure 4, including it is spaced and is arranged in parallel in the pottery
The first metal polar plate 41 in ceramic dielectric and the second metal polar plate 42.Using two metal polar plates disposed in parallel, can utilize
Capacitive coupling transmission principle transmits signal using the variation of electric field between two metal polar plates, between two metal polar plates not
It needs to can be achieved with communicating using metal connection, has effectively reached and electrical isolation is carried out by ceramic dielectric between adjacent two cavity
Purpose.
In the present embodiment, the coupled transfer structure is equipped in the ceramic dielectric between two cavity of arbitrary neighborhood.It is in office
It anticipates and is respectively provided with coupled transfer structure in the ceramic dielectric between adjacent two cavity, may be implemented logical between two cavity of arbitrary neighborhood
Letter.
In the present embodiment, IC chip is equipped in the cavity, described IC chip one end is connected with covering
Dress lead 5 is communicated with realizing the communication with IC chip in cavity and outside between the other end and realization neighboring chambers
The coupled transfer structure connection.
In the present embodiment, the cavity includes the groove structure formed by the ceramic dielectric and is encapsulated in the groove
The metal cover board of structure open end.The cavity is formed using groove structure and metal cover board, can as needed be beaten cavity
It opens, the electric elements being convenient for changing in cavity or installation and maintenance etc..
Below by taking two cavitys as an example, the multi-cavity encapsulating structure of electrical isolation is illustrated.It, can be with when cavity is two
It is arranged using up-down structure or tiled configuration, to facilitate user according to different package requirements the arrangement that selects cavity different
Form.
As depicted in figs. 1 and 2, two cavitys are respectively the first cavity 11 and the second cavity 12 formed by ceramic dielectric,
The structure type of ceramic cartridge 1 may be used in ceramic dielectric, i.e., each in the top of the both sides up and down of ceramic cartridge 1 or the left and right sides
One groove structure is set, and the first metal cover board 18 is arranged to be packaged to it in the open-mouth of the groove structure of top, lower section
The open-mouth of groove structure second metal cover board 19 is set it is packaged.First cavity, 11 region and its in
Electric elements belong to the first power domain 6,12 region of the second cavity and the electric elements in it belong to second source domain
7。
As depicted in figs. 1 and 2, the first IC chip 13, the first integrated circuit are provided in first cavity 11
13 both ends of chip are bonded in using bonding line 16 (i.e. metallic bond plying) on two PAD pads 15 of 11 bottom of the first cavity, the
The outer package lead 5 of one power domain 6 connects one of PAD pads 15 to realize the first integrated circuit by crossing line conduction band 17
Chip 13 and external communication, the first wire coil 21 or third wire coil 31 or the first of transformer coupled transmission structure 2
Metal polar plate 41 connects another PAD pad 15 by crossing line conduction band 17.
As depicted in figs. 1 and 2, the second IC chip 14, the second integrated circuit are provided in second cavity 12
14 both ends of chip are bonded in using bonding line 16 (i.e. metallic bond plying) on two PAD pads 15 of 12 bottom of the second cavity, the
The outer package lead 5 of two power domains 7 connects one of PAD pads 15 to realize the second integrated circuit by crossing line conduction band 17
Chip 14 and external communication, the second wire coil 22 or giant magnetoresistance 32 of transformer coupled transmission structure 2 or the second metal pole
Plate 42 connects another PAD pad 15 by crossing line conduction band 17.
Specifically, the first cavity 11 in Fig. 1 is located at right over the second cavity 12, the groove structure of the first cavity 11 is formed
Opening up arrangement forms the opening down arrangement of groove structure of the second cavity 12.The first integrated circuit in first cavity 11
The slot bottom in 11 groove structure of the first cavity is arranged in chip 13, and the setting of the second IC chip 14 in the second cavity 12 is the
The slot bottom of two cavitys, 12 groove structure, the first IC chip 13 are correspondingly arranged with the second IC chip 14, the first chamber
The slot bottom of groove structure where the PAD pads 15 in PAD pads 15 and the second cavity 12 in body 11 are all disposed within, and positioned at the
The both sides of one IC chip 13 or the second IC chip 15.Ceramic dielectric between the slot bottom of two groove structures
In be embedded with the first coil wire coil 21 arranged up and down and the second wire coil 22,21 one end of the first wire coil and first
The PAD pads 15 on 11 right side of cavity are connected by crossing line conduction band 17, and the outer package lead 5 on the left of multi-cavity encapsulating structure passes through
Line conduction band 17 is crossed to connect with the PAD pads 15 in 11 left side of the first cavity；Second wire coil, 22 one end and 12 left side of the second cavity
PAD pads 15 by cross line conduction band 17 connect, be located at multi-cavity encapsulating structure on the right side of outer package lead 5 passed through cross line conduction band 17
It is connect with the PAD pads 15 on 12 right side of the second cavity.The first wire coil 21 in Fig. 1 can be substituted for third wire coil
31, the second wire coil 22 can be substituted for giant magnetoresistance 32, and third wire coil 31 is corresponding with about 32 giant magnetoresistance and interval is set
It sets to carry out signal transmission, it is specific as shown in Figure 3；Alternatively, the first wire coil 21 in Fig. 1 can be substituted for the first metal pole
Plate 41, the second wire coil 22 can be substituted for the second metal polar plate 42, on the first metal polar plate 41 and the second metal polar plate 42
Lower correspondence and spaced and parallel setting carries out signal transmission, it is specific as shown in Figure 4.
Left and right arrangement, the first cavity 11 are located at the second cavity 12 side by side for the first cavity 11 and the second cavity 12 in Fig. 2
Left side, the groove structure opening for forming the second cavity 12 of groove structure and formation of the first cavity 11 is upwardly disposed, and first
11 bottom of cavity is wholely set with 12 bottom of the second cavity and is located at same level height.The first integrated electricity in first cavity 11
The slot bottom in 11 groove structure of the first cavity is arranged in road chip 13, and the second IC chip 14 setting in the second cavity 12 exists
The slot bottom of second cavity, 12 groove structure, the PAD pads 15 in PAD pads 15 and the second cavity 12 in the first cavity 11 are all set
The slot bottom in place groove structure is set, and positioned at the both sides of the first IC chip 13 or the second IC chip 14.
The first wire coil 21 and the second wire coil 22 arranged up and down are embedded in ceramic dielectric between two groove structures, the
One wire coil, 21 one end is connect with the PAD pads 15 on 11 right side of the first cavity by crossing line conduction band 17, is located at multi-cavity encapsulation knot
Outer package lead 5 on the left of structure is connect by crossing line conduction band 17 with the PAD pads 15 in 11 left side of the first cavity；Second wire coil
22 one end are connect with the PAD pads 15 in 12 left side of the second cavity by crossing line conduction band 17, are located at outer on the right side of multi-cavity encapsulating structure
Package lead 5 is connect by crossing line conduction band 17 with the PAD pads 15 on 12 right side of the second cavity.The first wire coil 21 in Fig. 2
Can be substituted for third wire coil 31, the second wire coil 22 can be substituted for giant magnetoresistance 32, third wire coil 31 with it is huge
About 32 magnetic resistance is corresponding and interval is arranged to carry out signal transmission, specific as shown in Figure 3；Alternatively, the first wire coil in Fig. 2
21 can be substituted for the first metal polar plate 41, and the second wire coil 22 can be substituted for the second metal polar plate 42, the first metal pole
Plate 41 and the second about 42 metal polar plate be corresponding and spaced and parallel setting carries out signal transmission, it is specific as shown in Figure 4.
The multi-cavity encapsulating structure of the electrical isolation of the present embodiment, using the coupled transfer structure being embedded in ceramic dielectric into
When row signal transmission, not by the method for the direct-connected metal of bonding line, directly pass through transformer coupled principle or capacitive coupling principle
Or giant magnetoresistance coupling principle realizes signal transmission so that between each cavity independently of each other, has reached truly electrical
Isolation.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on ... shown in the drawings or
Position relationship is merely for convenience of description of the present invention and simplification of the description, and does not indicate or imply the indicated device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the present invention, the meaning of " plurality " is at least two, such as two, three
It is a etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；Can be that machinery connects
It connects, can also be electrical connection；It can be directly connected, can also can be indirectly connected through an intermediary in two elements
The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art
For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature can be with "above" or "below" second feature
It is that the first and second features are in direct contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
Fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " lower section " and " below " can be
One feature is directly under or diagonally below the second feature, or is merely representative of fisrt feature level height and is less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiments or example.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (10)
1. a kind of multi-cavity encapsulating structure of electrical isolation, which is characterized in that include by ceramic dielectric carry out two of electrical isolation or
More than two cavitys are provided in the ceramic dielectric and realize that the coupling communicated between the affiliated power domain of two cavity of arbitrary neighborhood passes
Defeated structure.
2. the multi-cavity encapsulating structure of a kind of electrical isolation according to claim 1, which is characterized in that the coupled transfer structure is adopted
Realize that signal passes with transformer coupled principle or giant magnetoresistance coupling principle, using mutually converting for energy between electric energy and magnetic energy
It is defeated.
3. the multi-cavity encapsulating structure of a kind of electrical isolation according to claim 2, which is characterized in that the coupled transfer structure is
Transformer coupled transmission structure, including the first wire coil and the second wire coil that are arranged at intervals in the ceramic dielectric.
4. the multi-cavity encapsulating structure of a kind of electrical isolation according to claim 2, which is characterized in that the coupled transfer structure is
Giant magnetoresistance coupled transfer structure, including the third wire coil and giant magnetoresistance that are arranged at intervals in the ceramic dielectric.
5. the multi-cavity encapsulating structure of a kind of electrical isolation according to claim 1, which is characterized in that the coupled transfer structure is adopted
Signal transmission is realized with capacitance coupled transfer principle, using electric field change.
6. the multi-cavity encapsulating structure of a kind of electrical isolation according to claim 5, which is characterized in that the coupled transfer structure is
Capacitive coupling transmission structure, including be spaced and be arranged in parallel in the first metal polar plate in the ceramic dielectric and the second metal pole
Plate.
7. according to a kind of any one of claim 1 to 6 multi-cavity encapsulating structure of electrical isolation, which is characterized in that arbitrary neighborhood
The coupled transfer structure is equipped in ceramic dielectric between two cavitys.
8. according to a kind of any one of claim 1 to 6 multi-cavity encapsulating structure of electrical isolation, which is characterized in that the cavity
In be equipped with IC chip, described IC chip one end be connected with the external outer package lead realized and communicated, it is another
It holds and is connected with the coupled transfer structure communicated between neighboring chambers is realized.
9. according to a kind of any one of claim 1 to 6 multi-cavity encapsulating structure of electrical isolation, which is characterized in that the cavity
Include the groove structure formed by the ceramic dielectric and is encapsulated in the metal cover board of the groove structure open end.
10. according to a kind of any one of claim 1 to 6 multi-cavity encapsulating structure of electrical isolation, which is characterized in that the cavity
For two and it is set as up-down structure or tiled configuration.
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