CN108484114B - 一种高掺量抛光废料的釉面瓷质砖及其制备方法 - Google Patents
一种高掺量抛光废料的釉面瓷质砖及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种高掺量抛光废料的釉面瓷质砖,其自上而下包括砖坯层、底釉层、装饰层和透明抛釉层,所述砖坯层按坯料原料质量百分比计包括30~55%的陶瓷抛光废料、0.5~15%的单质硅粉和30~69.5%的砖坯基料,所述底釉层由底釉基础釉料和铁铬黑陶瓷色料混合而成。本发明通过在砖坯中引入了单质硅粉,借助单质硅粉在高温条件下对陶瓷抛光废料中碳化硅颗粒周围氧气的消耗,有效抑制陶瓷抛光废料中的碳化硅氧化,实现了陶瓷抛光废料的高掺量应用,有效解决陶瓷抛光废料的循环利用及环保问题,同时通过在底釉层中引入与砖坯层颜色一致的色料,有效地解决了该瓷质砖在后期切边倒角过程中出现白线的缺陷。
Description
技术领域
本发明涉及建筑材料废物利用领域,特别涉及抛光废料在釉面瓷质砖上的利用。
背景技术
抛光废料主要来源于建筑陶瓷生产冷加工过程中的切边和表面抛光环节。由于抛光磨头的损耗,使得陶瓷抛光废料中不仅含有陶瓷砖的成分,同时还含有少量的抛光磨头的成分,即水泥类胶凝材料和硬质颗粒碳化硅。研究表明将陶瓷抛光废料直接应用到陶瓷坯体中,由于抛光磨头成分的特殊性,坯体易形成蜂窝发泡状结构。目前,对抛光废料的循环利用主要集中在生产轻质陶瓷砖和吸水率较大的陶质釉面砖方向。但轻质陶瓷砖产品由于其本身存在的局限性,如装饰性不佳、耐污染性能差和抗折强度低等,难以广泛应用。同时,抛光废料利用率较低,目前有陶瓷企业利用抛光废料制备陶质釉面砖,其利用率仅为10~20%,如继续增加抛光废料的掺入量,便会出现发泡程度加剧的缺陷。
中国专利CN107651940A公开了一种含有高掺量抛光废料的瓷质砖及其制备方法,在配方中引入了高温脱氧剂,借助高温脱氧剂对抛光废料中碳化硅颗粒周围氧气的消耗,抑制抛光废料中的碳化硅氧化,实现添加30%以上抛光废料的致密化应用。但由于抛光废料及高温脱氧剂使得坯体呈灰黑色调,与白色底釉颜色差异太大,因此制备出的产品后期切边倒角过程中会出现白线的问题。
中国专利CN107500740A公开了一种环保型黑色陶瓷砖及其制备方法,制备过程中未布施白色底釉,直接在黑色砖坯上布施透明抛釉,这样虽然有效避免了因使用白色底釉造成的切边倒角过程中出现白线的问题,但将透明抛釉与含抛光废料的坯体直接接触,抛釉中碱土金属氧化物易腐蚀废料中的微量碳化硅表面氧化硅保护膜,从而引起碳化硅的进一步氧化,导致釉面容易起泡。
发明内容
本发明的目的在于针对上述现有技术的不足,提供一种高掺量抛光废料的釉面瓷质砖,同时提供该釉面瓷质砖的制备方法。
本发明所采取的技术方案是:一种高掺量抛光废料的釉面瓷质砖,其自上而下包括砖坯层、底釉层、装饰层和透明抛釉层,所述砖坯层按坯料原料质量百分比计包括30~55%的陶瓷抛光废料、0.5~15%的单质硅粉和30~69.5%的砖坯基料,所述底釉层由底釉基础釉料和铁铬黑陶瓷色料混合而成。
作为上述方案的进一步改进,所述单质硅粉的细度为200~2000目,其细度的限定有利于提高陶瓷抛光废料中碳化硅颗粒在高温烧成下的脱氧效率。然而,细度过大其分散性能欠佳,而细度过细容易结团导致脱氧效率下降,因此本发明优选单质硅粉的细度为400~800目,其兼具优异的分散性能和高效脱氧性能。
作为上述方案的进一步改进,所述陶瓷抛光废料为含有不低于其总质量2%的含镁胶凝材料和不低于其总质量0.1%的碳化硅颗粒的陶瓷抛光废料。
作为上述方案的进一步改进,所述底釉层中铁铬黑陶瓷色料占底釉层总质量的0.1~3%。具体地,所述铁铬黑色料的添加量对底釉层与砖坯层的附着力存在一定影响,其添加量过大容易造成底釉层与砖坯层之间附着力下降而导致后续高温烧成时出现气泡、裂纹等质量问题,其添加量过少则颜色遮盖力不佳导致后期切边倒角后外观欠佳。
作为上述方案的进一步改进,所述底釉层中底釉基础釉料的化学成分按重量百分比计为:67.72%的SiO2、20.90%的Al2O3、0.09%的Fe2O3、0.01%的TiO2、0.41%的CaO、0.9%的MgO、6.08%的K2O、0.95%的Na2O、1.21%的ZnO、0.59%的ZrO2和1.1%的烧失量。具体地,该底釉基础釉料具有低钙低镁的特性,其可阻止高掺量抛光釉料砖坯中微量碳化硅颗粒的进一步高温氧化分解,有效地避免了砖坯层直接与抛釉层接触导致容易产生气泡的质量问题。
作为上述方案的进一步改进,所述透明抛釉层的化学成分按重量百分比计为:43~45%的SiO2、5~8%的Al2O3、0.05~0.08%的Fe2O3、0.01~0.03%的TiO2、7~9%的CaO、3~5%的MgO、2~5%的K2O、1~2%的Na2O、13~15%的ZnO和4~5%的烧失量。
一种如上项所述的高掺量抛光废料的釉面瓷质砖的制备方法,其包括如下工艺步骤:
1)将瓷质砖砖坯坯料各原料组分与水混合加入球磨机中进行球磨处理,坯料添加量按质量百分比计为所述坯料各组分与水的总重量的65~70%,球磨至混合物料细度为0.3以下,后经除铁、过筛、喷粉和陈腐,得砖坯粉料;
2)将步骤1)所得砖坯粉料置于压机中进行半干压制成型,得砖坯;
3)步骤2)所得砖坯经干燥后布施底釉形成底釉层,在底釉层上进行图案装饰形成装饰层,后经布施透明釉形成透明抛釉层,再进入烧成窑中高温烧成,最后经抛光和磨边处理得成品。
作为上述方案的进一步改进,步骤1)中球磨处理过程中控制球磨机填充率为60~80%,其具有良好的球磨效率。
作为上述方案的进一步改进,步骤3)中所述图案装饰选自丝网印刷、滚筒印刷和喷墨打印中的至少一种。
本发明的有益效果是:
(1)本发明通过在砖坯中引入了单质硅粉,借助单质硅粉在高温条件下对陶瓷抛光废料中碳化硅颗粒周围氧气的消耗,有效抑制陶瓷抛光废料中的碳化硅氧化,实现了陶瓷抛光废料的高掺量应用,有效解决陶瓷抛光废料的循环利用及环保问题,同时通过在底釉层中引入与砖坯层颜色一致的色料,有效地解决了该瓷质砖在后期切边倒角过程中出现白线的缺陷。
(2)本发明通过在底釉层中引入低钙低镁成分,阻止了高掺量抛光废料砖坯中微量碳化硅颗粒的进一步高温氧化分解,有效地避免了砖坯层直接与抛釉层接触导致容易产生气泡的质量问题。
具体实施方式
下面结合实施例对本发明进行具体描述,以便于所属技术领域的人员对本发明的理解。有必要在此特别指出的是,实施例只是用于对本发明做进一步说明,不能理解为对本发明保护范围的限制,所属领域技术熟练人员,根据上述发明内容对本发明作出的非本质性的改进和调整,应仍属于本发明的保护范围。同时下述所提及的原料未详细说明的,均为市售产品;未详细提及的工艺步骤或制备方法为均为本领域技术人员所知晓的工艺步骤或制备方法。
实施例1
一种高掺量抛光废料的釉面瓷质砖,其自上而下包括砖坯层、底釉层、装饰层和透明抛釉层。其中:
砖坯层按坯料原料质量百分比计由30%的陶瓷抛光废料、0.5%的细度为800目的单质硅粉和69.5%的砖坯基料组成,所述陶瓷抛光废料中含有不低于其总质量2%的含镁胶凝材料和不低于其总质量0.1%的碳化硅颗粒;
底釉层按原料质量百分比计99.9%的底釉基础釉料和0.1%的铁铬黑陶瓷色料组成,所述底釉基础釉料的化学成分按重量百分比计为:67.72%的SiO2、20.90%的Al2O3、0.09%的Fe2O3、0.01%的TiO2、0.41%的CaO、0.9%的MgO、6.08%的K2O、0.95%的Na2O、1.21%的ZnO、0.59%的ZrO2和1.1%的烧失量;
透明抛釉层的化学成分按重量百分比计为:44.51%的SiO2、6.33%的Al2O3、0.05%的Fe2O3、0.02%的TiO2、8.25%的CaO、4.12%的MgO、3.20%的K2O、1.15%的Na2O、13.56%的ZnO和4.53%的烧失量。
制备方法:
1)将瓷质砖砖坯坯料各原料组分与水混合加入球磨机中进行球磨处理,坯料添加量按质量百分比计为所述坯料各组分与水的总重量的65%,控制球磨机填充率为75%,球磨至混合物料细度为0.25,后经除铁、250目筛网过筛、喷粉和陈腐,得砖坯粉料;
2)将步骤1)所得砖坯粉料置于压机中进行半干压制成型,得砖坯;
3)步骤2)所得砖坯经干燥后布施底釉形成底釉层,底釉层与砖坯层的色差值不高于0.2,在底釉层上进行图案装饰形成灰色色调的装饰层,后经布施透明釉形成透明抛釉层,再进入烧成窑中于1220℃高温烧成,最后经抛光和磨边处理,得实施例1成品。
实施例2
一种高掺量抛光废料的釉面瓷质砖,其自上而下包括砖坯层、底釉层、装饰层和透明抛釉层。其中:
砖坯层按坯料原料质量百分比计由55%的陶瓷抛光废料、15%的细度为400目的单质硅粉和30%的砖坯基料组成,所述陶瓷抛光废料中含有不低于其总质量2%的含镁胶凝材料和不低于其总质量0.1%的碳化硅颗粒;
底釉层按原料质量百分比计97%的底釉基础釉料和3%的铁铬黑陶瓷色料组成,所述底釉基础釉料的化学成分按重量百分比计为:67.72%的SiO2、20.90%的Al2O3、0.09%的Fe2O3、0.01%的TiO2、0.41%的CaO、0.9%的MgO、6.08%的K2O、0.95%的Na2O、1.21%的ZnO、0.59%的ZrO2和1.1%的烧失量;
透明抛釉层的化学成分按重量百分比计为:45.89%的SiO2、7.33%的Al2O3、0.05%的Fe2O3、0.02%的TiO2、6.78%的CaO、5.54%的MgO、3.25%的K2O、1.89%的Na2O、14.56%的ZnO和5.51%的烧失量。
制备方法:
1)将瓷质砖砖坯坯料各原料组分与水混合加入球磨机中进行球磨处理,坯料添加量按质量百分比计为所述坯料各组分与水的总重量的70%,控制球磨机填充率为80%,球磨至混合物料细度为0.21,后经除铁、250目筛网过筛、喷粉和陈腐,得砖坯粉料;
2)将步骤1)所得砖坯粉料置于压机中进行半干压制成型,得砖坯;
3)步骤2)所得砖坯经干燥后布施底釉形成底釉层,底釉层与砖坯层的色差值不高于0.2,在底釉层上进行图案装饰形成黄金色色调的装饰层,后经布施透明釉形成透明抛釉层,再进入烧成窑中于1200℃高温烧成,最后经抛光和磨边处理,得实施例2成品。
实施例3
一种高掺量抛光废料的釉面瓷质砖,其自上而下包括砖坯层、底釉层、装饰层和透明抛釉层。其中:
砖坯层按坯料原料质量百分比计由40%的陶瓷抛光废料、10%的细度为600目的单质硅粉和50%的砖坯基料组成,所述陶瓷抛光废料中含有不低于其总质量2%的含镁胶凝材料和不低于其总质量0.1%的碳化硅颗粒;
底釉层按原料质量百分比计98%的底釉基础釉料和2%的铁铬黑陶瓷色料组成,所述底釉基础釉料的化学成分按重量百分比计为:67.72%的SiO2、20.90%的Al2O3、0.09%的Fe2O3、0.01%的TiO2、0.41%的CaO、0.9%的MgO、6.08%的K2O、0.95%的Na2O、1.21%的ZnO、0.59%的ZrO2和1.1%的烧失量;
透明抛釉层的化学成分按重量百分比计为:47.25%的SiO2、6.25%的Al2O3、0.05%的Fe2O3、0.02%的TiO2、7.84%的CaO、6.01%的MgO、3.17%的K2O、1.55%的Na2O、13.21%的ZnO和5.11%的烧失量。
制备方法:
1)将瓷质砖砖坯坯料各原料组分与水混合加入球磨机中进行球磨处理,坯料添加量按质量百分比计为所述坯料各组分与水的总重量的68%,控制球磨机填充率为70%,球磨至混合物料细度为0.23,后经除铁、250目筛网过筛、喷粉和陈腐,得砖坯粉料;
2)将步骤1)所得砖坯粉料置于压机中进行半干压制成型,得砖坯;
3)步骤2)所得砖坯经干燥后布施底釉形成底釉层,底釉层与砖坯层的色差值不高于0.2,在底釉层上进行图案装饰形成白色色调的装饰层,后经布施透明釉形成透明抛釉层,再进入烧成窑中于1180℃高温烧成,最后经抛光和磨边处理,得实施例3成品。
上述实施例为本发明的优选实施例,凡与本发明类似的工艺及所作的等效变化,均应属于本发明的保护范畴。
Claims (6)
1.一种高掺量抛光废料的釉面瓷质砖,其特征在于∶自上而下包括砖坯层、底釉层、装饰层和透明抛釉层,所述砖坯层按坯料原料质量百分比计包括30~55%的陶瓷抛光废料、0.5~15%的单质硅粉和30~69.5%的砖坯基料,所述底釉层由底釉基础釉料和铁铬黑陶瓷色料混合而成,其中所述底釉层中底釉基础釉料的化学成分按重量百分比计为67.72%的SiO2、20.90%的Al2O3、0.09%的Fe2O3、0.01%的TiO2、0.41%的CaO、0.9%的MgO、6.08%的K2O、0.95%的Na2O、1.21%的ZnO、0.59%的ZrO2和1.1%的烧失量;所述单质硅粉的细度为400~800目。
2.根据权利要求1所述的一种高掺量抛光废料的釉面瓷质砖,其特征在于∶所述陶瓷抛光废料为含有不低于其总质量2%的含镁胶凝材料和不低于其总质量0.1%的碳化硅颗粒的陶瓷抛光废料。
3.根据权利要求1所述的一种高掺量抛光废料的釉面瓷质砖,其特征在于∶所述底釉层中铁铬黑陶瓷色料占底釉层总质量的0.1~3%。
4.一种如权利要求1~3任一项所述的高掺量抛光废料的釉面瓷质砖的制备方法,其特征在于包括如下工艺步骤∶
1)将瓷质砖砖坯坯料各原料组分与水混合加入球磨机中进行球磨处理,坯料添加量按质量百分比计为所述坯料各组分与水的总重量的65~70%,球磨至混合物料细度为0.3以下,后经除铁、过筛、喷粉和陈腐,得砖坯粉料;
2)将步骤1)所得砖坯粉料置于压机中进行半干压制成型,得砖坯;
3)步骤2)所得砖坯经干燥后布施底釉形成底釉层,在底釉层上进行图案装饰形成装饰层,后经布施透明釉形成透明抛釉层,再进入烧成窑中高温烧成,最后经抛光和磨边处理得成品。
5.根据权利要求4所述的一种高掺量抛光废料的釉面瓷质砖的制备方法,其特征在于∶步骤1)中球磨处理过程中控制球磨机填充率为60~80%。
6.根据权利要求4所述的高掺量抛光废料的釉面瓷质砖的制备方法,其特征在于∶步骤3)中所述图案装饰选自丝网印刷、滚筒印刷和喷墨打印中的至少一种。
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