CN108364711A - A kind of post-processing approach of silk-screen printing nano silver wire transparent conductive film - Google Patents
A kind of post-processing approach of silk-screen printing nano silver wire transparent conductive film Download PDFInfo
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- CN108364711A CN108364711A CN201810086575.8A CN201810086575A CN108364711A CN 108364711 A CN108364711 A CN 108364711A CN 201810086575 A CN201810086575 A CN 201810086575A CN 108364711 A CN108364711 A CN 108364711A
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- Prior art keywords
- nano silver
- silver wire
- transparent conductive
- conductive film
- silk
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
Abstract
This application discloses a kind of post-processing approach of silk-screen printing nano silver wire transparent conductive film, it annealed, cleaned and plasma treatment etc. reduces the contact resistance between nano silver wire by the nano silver wire pattern to silk-screen printing, realize being obviously improved for film conductivity;Last handling process can also improve the bond strength between nano silver wire and nano silver wire and nano silver wire and substrate simultaneously, to improve the mechanical flexibility of film, transparent conductive film be made to remain to keep higher optical stability under the conditions of mechanically deform;There is higher conductivity and light transmittance, lower surface roughness and excellent mechanical flexibility using the nano silver wire transparent conductive film prepared by this method, can be used as flexible transparent electrode and be applied to various opto-electronic devices.
Description
Technical field
The invention belongs to printed electronics fields, and in particular to a kind of silk-screen printing nano silver wire transparent conductive film
Post-processing approach.
Background technology
In recent years, flexibility/wearable device, such as:Smartwatch, bracelet, photoelectric display, energy stores, medical electronics
Equipment etc., it is of increased attention.Wherein, as basic one of building block, transparent conductive film is for various
The performance of opto-electronic device plays vital influence.Tin indium oxide ITO is the transparent conductive film being widely adopted at present.
But higher processing cost and limited indium reserves make the price of ITO remain high always.Therefore, it develops novel
Low-cost transparent conductive film is current important one of frontier nature project.
Nano silver wire transparent conductive film is because having higher conductivity and light transmittance, lower cost, excellent machinery
The advantages such as flexibility and the next-generation transparent conductive film for being considered as most foreground.Currently, laboratory mainly passes through spin coating, spray
The technologies such as painting, drop coating or rod coating prepare nano silver wire transparent conductive film, but these technologies are limited because being limited to working (finishing) area,
Material consumption is high, to hinder its commercially producing further.
Printed electronics are a kind of technologies for realizing prepared by opto-electronic device by printing approach.Due to low cost, ring
The advantages such as guarantor, large area and show huge Commercial Prospect.Nano silver wire electrically conducting transparent is prepared in conjunction with screen printing technique
Film can play huge commercial advantages in low cost, large area, flexibility etc..But silk-screen printing at present
There are still many shortcomings in photoelectric properties, flexibility and stability etc. for nano silver wire transparent conductive film.This hair
Bright is that certain resolving ideas is provided for problem above from the post-processing angle of silk-screen printing nano silver wire transparent conductive film.
Invention content
The technical issues of solution:In order to overcome the deficiencies in the prior art, the application to propose a kind of silk-screen printing silver
The post-processing approach of nano wire transparent conductive film, the nano silver wire transparent conductive film prepared by this method have higher electricity
Conductance and light transmittance, lower surface roughness and excellent mechanical flexibility can be used as flexible transparent electrode and be applied to respectively
Kind opto-electronic device, can solve in the prior art the technical problems such as processing cost is high, resistivity is high and flexibility is poor.
Technical solution:A kind of post-processing approach of silk-screen printing nano silver wire transparent conductive film, includes the following steps:
The first step:Nano silver wire ink is placed on the mask plate of silk-screen printing instrument, with 30~60 mm s-1Printing speed
Squeegee at the uniform velocity by mask plate, nano silver wire pattern is printed onto in PET base by rate, the printing pressure of 25~40 N;
Second step:Nano silver wire pattern is carried out at 100~120 DEG C to heating anneal and handles 5~10 min to evaporate solvent, with
10~15 min of plasma treatment is carried out afterwards, is later rinsed nano silver wire pattern with deionized water;
Third walks:The flushed nano silver wire pattern of deionized water is handled 15~20 using 100~120 DEG C of heating anneals
Then min is rinsed with deionized water again, to remove remaining additive;
4th step:The nano silver wire pattern for removing residual additives is handled into 15~20 min in 100~120 DEG C of heating anneals
Nano silver wire transparent conductive film is made.
A kind of optimal technical scheme as the application:Plasma power is 180~190 W in the step 2.
Advantageous effect:
1. last handling process can reduce the contact resistance between nano silver wire, being obviously improved for film conductivity, conductivity are realized
It can be increased to 2.05 × 10 from 04 s/cm。
2. the mechanical flexibility of film also can be improved in last handling process, make transparent conductive film under the conditions of mechanically deform
It remains to keep higher optical stability, after bending 100 times at 180 °, sheet resistance changes < 30%.
3. plasma treatment can improve the adhesion strength between nano silver wire and substrate, the silver nanoparticle caused by washing is reduced
Line loss is lost, and in no plasma treatment, because substrate adhesion is poor, water-washing process can wash away the nano silver wire of part.
4. nano silver wire transparent conductive film prepared by has higher conductivity and light transmittance, lower surface thick
Rugosity and excellent flexibility, conductivity are up to 2.05 × 104S/cm, light transmittance > 70%, can be used as flexible transparent electrode
Applied to various opto-electronic devices.
Description of the drawings
Fig. 1 is SEM spectrum of the application in the nano silver wire transparent conductive film of embodiment 1.
Specific implementation mode
The specific implementation mode of the application is described in further detail with reference to the accompanying drawings of the specification.Following embodiment
It will be helpful to those skilled in the art and further understand the application, but do not limit the application in any form.It should be understood that
Be, to those skilled in the art, do not depart from the application design under the premise of, can also make it is several deformation and
It improves.These belong to the protection domain of the application.
Embodiment 1:
The first step:Nano silver wire ink is placed on the mask plate of silk-screen printing instrument, with 40 mm s-1Printing rate, 30
Squeegee at the uniform velocity by mask plate, nano silver wire pattern is printed onto in PET base by the printing pressure of N;
Second step:Nano silver wire pattern is carried out at 120 DEG C to heating anneal and handles 5 min to evaporate solvent, then carry out etc. from
10 min of subprocessing, plasma power are 180 W, are later rinsed nano silver wire pattern with deionized water;
Third walks:The flushed nano silver wire pattern of deionized water is handled into 15 min using 120 DEG C of heating anneals, then
It is rinsed again with deionized water, to remove remaining additive;
4th step:The nano silver wire pattern for removing residual additives is handled into 15 min in 120 DEG C of heating anneals, silver nanoparticle is made
Line transparent conductive film.
The SEM spectrum of nano silver wire transparent conductive film is shown in Figure 1.
Embodiment 2:
The first step:Nano silver wire ink is placed on the mask plate of silk-screen printing instrument, with 40 mm s-1Printing rate, 30
Squeegee at the uniform velocity by mask plate, nano silver wire pattern is printed onto in PET base by the printing pressure of N;
Second step:Nano silver wire pattern is carried out at 120 DEG C to heating anneal and handles 5 min to evaporate solvent, then carry out etc. from
10 min of subprocessing, plasma power are 190 W, are later rinsed nano silver wire pattern with deionized water;
Third walks:The flushed nano silver wire pattern of deionized water is handled into 15 min using 120 DEG C of heating anneals, then
It is rinsed again with deionized water, to remove remaining additive;
4th step:The nano silver wire pattern for removing residual additives is handled into 15 min in 120 DEG C of heating anneals, silver nanoparticle is made
Line transparent conductive film.
Embodiment 3:
The first step:Nano silver wire ink is placed on the mask plate of silk-screen printing instrument, with 40 mm s-1Printing rate, 30
Squeegee at the uniform velocity by mask plate, nano silver wire pattern is printed onto in PET base by the printing pressure of N;
Second step:Nano silver wire pattern is carried out at 120 DEG C to heating anneal and handles 5 min to evaporate solvent, then carry out etc. from
15 min of subprocessing, plasma power are 180 W, are later rinsed nano silver wire pattern with deionized water;
Third walks:The flushed nano silver wire pattern of deionized water is handled into 15 min using 120 DEG C of heating anneals, then
It is rinsed again with deionized water, to remove remaining additive;
4th step:The nano silver wire pattern for removing residual additives is handled into 15 min in 120 DEG C of heating anneals, silver nanoparticle is made
Line transparent conductive film.
Embodiment 4:
The first step:Nano silver wire ink is placed on the mask plate of silk-screen printing instrument, with 40 mm s-1Printing rate, 30
Squeegee at the uniform velocity by mask plate, nano silver wire pattern is printed onto in PET base by the printing pressure of N;
Second step:Nano silver wire pattern is carried out at 120 DEG C to heating anneal and handles 5 min to evaporate solvent, then carry out etc. from
15 min of subprocessing, plasma power are 190 W, are later rinsed nano silver wire pattern with deionized water;
Third walks:The flushed nano silver wire pattern of deionized water is handled into 15 min using 120 DEG C of heating anneals, then
It is rinsed again with deionized water, to remove remaining additive;
4th step:The nano silver wire pattern for removing residual additives is handled into 15 min in 120 DEG C of heating anneals, silver nanoparticle is made
Line transparent conductive film.
Part that the present invention does not relate to is the same as those in the prior art or can be realized by using the prior art.
The specific embodiment of the application is described above.It is to be appreciated that the application be not limited to it is above-mentioned specific
Embodiment, those skilled in the art can make various deformations or amendments within the scope of the claims, this has no effect on this
The substantive content of application.
Claims (2)
1. a kind of post-processing approach of silk-screen printing nano silver wire transparent conductive film, which is characterized in that include the following steps:
The first step:Nano silver wire ink is placed on the mask plate of silk-screen printing instrument, with 30~60 mm s-1Printing rate,
Squeegee at the uniform velocity by mask plate, nano silver wire pattern is printed onto in PET base by the printing pressure of 25~40 N;
Second step:Nano silver wire pattern is carried out at 100~120 DEG C to heating anneal and handles 5~10 min to evaporate solvent, with
10~15 min of plasma treatment is carried out afterwards, is later rinsed nano silver wire pattern with deionized water;
Third walks:The flushed nano silver wire pattern of deionized water is handled 15~20 using 100~120 DEG C of heating anneals
Then min is rinsed with deionized water again, to remove remaining additive;
4th step:The nano silver wire pattern for removing residual additives is handled into 15~20 min in 100~120 DEG C of heating anneals
Nano silver wire transparent conductive film is made.
2. a kind of post-processing approach of silk-screen printing nano silver wire transparent conductive film, feature exist according to claim 1
In:Plasma power is 180~190 W in the step 2.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109324712A (en) * | 2018-08-28 | 2019-02-12 | 上海幂方电子科技有限公司 | A kind of pressure type interactive display part and its manufacturing method |
CN109493734A (en) * | 2018-10-26 | 2019-03-19 | 深圳市华星光电半导体显示技术有限公司 | The production method of pixel electrode, display panel |
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KR20140015092A (en) * | 2012-07-27 | 2014-02-06 | 엘지이노텍 주식회사 | Cover window, toouch window with the cover window and manufacturing method thereof |
CN104575864A (en) * | 2014-12-15 | 2015-04-29 | 中国科学院长春应用化学研究所 | Method for directly preparing metal oxide/silver nanowire composite conductive network |
CN105810364A (en) * | 2016-05-12 | 2016-07-27 | 南京工业大学 | Processing method for silver nanowire conductive thin film |
CN106098134A (en) * | 2016-07-04 | 2016-11-09 | 陕西煤业化工技术研究院有限责任公司 | A kind of nano silver wire transparent conductive film and preparation method |
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2018
- 2018-01-30 CN CN201810086575.8A patent/CN108364711A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20140015092A (en) * | 2012-07-27 | 2014-02-06 | 엘지이노텍 주식회사 | Cover window, toouch window with the cover window and manufacturing method thereof |
CN104575864A (en) * | 2014-12-15 | 2015-04-29 | 中国科学院长春应用化学研究所 | Method for directly preparing metal oxide/silver nanowire composite conductive network |
CN105810364A (en) * | 2016-05-12 | 2016-07-27 | 南京工业大学 | Processing method for silver nanowire conductive thin film |
CN106098134A (en) * | 2016-07-04 | 2016-11-09 | 陕西煤业化工技术研究院有限责任公司 | A kind of nano silver wire transparent conductive film and preparation method |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109324712A (en) * | 2018-08-28 | 2019-02-12 | 上海幂方电子科技有限公司 | A kind of pressure type interactive display part and its manufacturing method |
CN109493734A (en) * | 2018-10-26 | 2019-03-19 | 深圳市华星光电半导体显示技术有限公司 | The production method of pixel electrode, display panel |
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Application publication date: 20180803 |