CN108051134A - The capacitance pressure transducer, of Closed loop operation mode - Google Patents
The capacitance pressure transducer, of Closed loop operation mode Download PDFInfo
- Publication number
- CN108051134A CN108051134A CN201711181054.2A CN201711181054A CN108051134A CN 108051134 A CN108051134 A CN 108051134A CN 201711181054 A CN201711181054 A CN 201711181054A CN 108051134 A CN108051134 A CN 108051134A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- pressure
- hole
- central electrode
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
Abstract
The invention discloses a kind of capacitance pressure transducer, of Closed loop operation mode, including top electrodes silicon chip, central electrode silicon chip, lower electrode silicon chip, silicon dioxide insulating layer, moveable mass block, first pressure through hole, second pressure through hole；Central electrode silicon chip is located between top electrodes silicon chip and lower electrode silicon chip, silicon dioxide insulating layer is designed between top electrodes silicon chip and central electrode silicon chip, between central electrode silicon chip and lower electrode silicon chip, moveable mass block is located on central electrode silicon chip, first pressure through hole is located at the centre of top electrodes silicon chip, and second pressure through hole is located at the centre of central electrode silicon chip.The present invention improves precision, the linearity, enhances antijamming capability, enhances overvoltage protection ability, improves stability and reliability.
Description
Technical field
The present invention relates to a kind of pressure sensors, are sensed more particularly to a kind of capacitive pressure of Closed loop operation mode
Device.
Background technology
Pressure sensor (Pressure Transducer) is to experience pressure signal, and can be incited somebody to action according to certain rule
Pressure signal is converted into the device or device of the electric signal of available output.Pressure sensor usually by pressure-sensing device and
Signal processing unit forms.By different test pressure types, pressure sensor can be divided into gauge pressure transducer, differential pressure pick-up
And absolute pressure sensor.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of capacitance pressure transducer, of Closed loop operation mode,
Precision, the linearity are improved, enhances antijamming capability, overvoltage protection ability is enhanced, improves stability and reliability.
The present invention is to solve above-mentioned technical problem by following technical proposals：A kind of capacitance of Closed loop operation mode
Formula pressure sensor, which is characterized in that it includes top electrodes silicon chip, central electrode silicon chip, lower electrode silicon chip, silica
Insulating layer, moveable mass block, first pressure through hole, second pressure through hole；Central electrode silicon chip is located at top electrodes silicon chip
Between lower electrode silicon chip, between top electrodes silicon chip and central electrode silicon chip, between central electrode silicon chip and lower electrode silicon chip
Silicon dioxide insulating layer is designed with, moveable mass block is located on central electrode silicon chip, and first pressure through hole is located at top electricity
The centre of pole silicon chip, second pressure through hole are located at the centre of central electrode silicon chip.
Preferably, the first pressure through hole, second pressure through hole are all taper pressure guide holes.
The positive effect of the present invention is：The present invention improves precision, the linearity, enhances antijamming capability, increases
Strong overvoltage protection ability, improves stability and reliability.
Description of the drawings
Fig. 1 is the structure diagram of the capacitance pressure transducer, of Closed loop operation mode of the present invention.
Fig. 2 is the schematic diagram of the capacitance pressure transducer, of Closed loop operation mode of the present invention.
Specific embodiment
Present pre-ferred embodiments are provided below in conjunction with the accompanying drawings, with the technical solution that the present invention will be described in detail.
As shown in Figure 1, the capacitance pressure transducer, of Closed loop operation mode of the present invention includes top electrodes silicon chip 1, center
Electrode silicon chip 2, lower electrode silicon chip 3, silicon dioxide insulating layer 4, moveable mass block 5, first pressure through hole 6, second pressure
Through hole 7；Central electrode silicon chip 2 is located between top electrodes silicon chip 1 and lower electrode silicon chip 3, top electrodes silicon chip 1 and middle electrocardio
Silicon dioxide insulating layer 4, moveable quality are designed between pole silicon chip 2, between central electrode silicon chip 2 and lower electrode silicon chip 3
Block 5 is located on central electrode silicon chip 2, and first pressure through hole 6 is located at the centre of top electrodes silicon chip 1, second pressure through hole 7
In the centre of central electrode silicon chip 2.
Sensor core is made of the capacitance of two series connection, and based single crystal silicon materials are a kind of semi-conducting materials, tool
Conductive, the electrode of capacitance is bonded by three silicon chip superpositions, is known as silicon-silicon-silicon (sandwich) structure.Center pole plate
Making be in silicon chip by anisotropic etching formed movable electrode, center pole plate both sides formed have it is completely right
The island structure of title, the thickness and width on island is according to determined by the pressure range ability of sensor.Top pole plate and bottom
A pressure guide hole for penetrating silicon chip is formed by etching on pole plate, the two Kong San wafer bondings together when will alignment
The center of central island；Forming one between the silicon pole plate of calmodulin binding domain CaM between silicon electrode has certain thickness silicon dioxide layer
So that electrode insulation, and top pole plate and bottom pole plate are bonded in from both sides on the pole plate of center, form upper and lower two series connection
Capacitor.When pressure at both sides difference changes, center pole plate generates displacement, and then changes the capacitance of center pole plate both sides
Size, therefore the capacitive differential of two capacitors changes with the variation of both sides different pressures difference.Two electricity when pressure differential is 0
Capacitance is equal.The first pressure through hole, second pressure through hole are all taper pressure guide holes, and taper pressure guide hole is in pressure jump
The protective effect to percussive pressure can be played.
The pressure sensor working method use PID Closed loop operation modes, the Closed loop operation system structure mainly by
Pressure sensor core, C2V (capacitance is converted to voltage), P-I- (D) (proportional, integral (- differential, optional)), FB (feedback),
The units such as carrier wave form.System block diagram is as shown in Figure 2.Its operation principle：Under the action of ambient pressure, pressure sensor core
The pressure conversion being transferred on movable electrode is capacitance (differential capacitance variation) by body, by C2V converting units by capacitance
The voltage with ambient pressure size variation is converted into, control then is adjusted by PID control cell voltage amount, PID is mono-
Member output is divided into both direction：First, it externally exports；Second is that into FB units, after overvoltage adjusts, pressure sensing is fed back to
On the work pole plate of device, the different voltage difference in two capacitance both ends generates intermediate movable polar plate different electrostatic force, the electrostatic
Effect of the ambient pressure to intermediate movable polar plate can be offset or be balanced to power, and the displacement that intermediate active pole plate is reduced or eliminated becomes
Change amount makes the movable plate of pressure sensor be in equilbrium position.This operation principle is suitable for the pressure of other structures type
Sensor core is also applied for the capacitance pressure transducer, ceramic condenser processed with other materials and metal capacitance pressure
Force snesor.The features of the present invention substantially increases precision, the linearity, enhances antijamming capability, enhances overvoltage protection
Ability improves stability and reliability.
Pressure sensor core can be equivalent to two variation capacitances connected or single variation capacitance, for sensitivity
Extraneous pressure change, includes differential pressure, gauge pressure and absolute pressure；When ambient pressure changes, position occurs for sensor movable electrode
It moves, changes the size of capacitance.The side that C2V (capacitance conversion voltage) unit passes through modulation /demodulation to the capacitance of sensor core
Formula realizes that capacitance is converted to voltage, and then extraneous pressure change is converted to readily discernible DC voltage；PID (accumulate by ratio
Dividing differential) unit carries out the voltage that C2V units export Signal Regulation, such as filtering, amplitude amplification processing, realization voltage reach
To the requirement of output and the requirement of closed-loop control.FB (amplification) units adjust amplification factor to PID unit output voltage,
Meet the requirement of closed-loop control and the adjustment to range and sensitivity.It is otherwise isolated from output and the direct phase of sensor core
Even, the noise crosstalk interference of the two is reduced, improves the resolution ratio of pressure sensor.Carrier wave (waveform in Fig. 2) provides carrier signal,
It is used with C2V unit matchings.This kind of working method is suitable for a variety of capacitance pressure transducer, structures without structure, according to
Different sensitive structures, feedback system can be divided into three kinds of different feedback systems：One, differential feedback, feedback quantity acts on fixation
On pole plate, differential capacitance variation structure is primarily adapted for use in；Two, single-ended feedback, feedback quantity acts on sensitive diaphragm/movable plate
On, it is primarily adapted for use in differential capacitance variation structure；Three, single-ended feedback, feedback quantity is acted on fixed polar plate, is primarily adapted for use in
Single capacitance variations structure.
Particular embodiments described above, the technical issues of to the solution of the present invention, technical solution and advantageous effect carry out
It is further described, it should be understood that the above is only a specific embodiment of the present invention, is not used to limit
The system present invention, within the spirit and principles of the invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (2)
1. a kind of capacitance pressure transducer, of Closed loop operation mode, which is characterized in that it includes top electrodes silicon chip, middle electrocardio
Pole silicon chip, lower electrode silicon chip, silicon dioxide insulating layer, moveable mass block, first pressure through hole, second pressure through hole；In
Heart electrode silicon chip is located between top electrodes silicon chip and lower electrode silicon chip, between top electrodes silicon chip and central electrode silicon chip, in
Silicon dioxide insulating layer is designed between heart electrode silicon chip and lower electrode silicon chip, moveable mass block is located at central electrode silicon chip
On, first pressure through hole is located at the centre of top electrodes silicon chip, and second pressure through hole is located at the centre of central electrode silicon chip.
2. the capacitance pressure transducer, of Closed loop operation mode as described in claim 1, which is characterized in that the first pressure
Through hole, second pressure through hole are all taper pressure guide holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711181054.2A CN108051134A (en) | 2017-11-23 | 2017-11-23 | The capacitance pressure transducer, of Closed loop operation mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711181054.2A CN108051134A (en) | 2017-11-23 | 2017-11-23 | The capacitance pressure transducer, of Closed loop operation mode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108051134A true CN108051134A (en) | 2018-05-18 |
Family
ID=62120384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711181054.2A Pending CN108051134A (en) | 2017-11-23 | 2017-11-23 | The capacitance pressure transducer, of Closed loop operation mode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108051134A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108775977A (en) * | 2018-06-21 | 2018-11-09 | 胡波 | Capacitance pressure transducer, based on force balance principle |
| CN109060229A (en) * | 2018-06-13 | 2018-12-21 | 中国科学院电子学研究所 | A kind of capacitance pressure transducer, and its manufacturing method |
| CN111122020A (en) * | 2019-12-31 | 2020-05-08 | 中国科学院微电子研究所 | Capacitive pressure detection device and sensor |
| CN111141424A (en) * | 2019-12-31 | 2020-05-12 | 中国科学院微电子研究所 | Differential capacitance type pressure detection device |
| CN111189562A (en) * | 2019-12-31 | 2020-05-22 | 中国科学院微电子研究所 | High-precision differential capacitance type pressure detection device with USB output |
| CN114046927A (en) * | 2022-01-06 | 2022-02-15 | 南京高华科技股份有限公司 | Closed-loop air pressure sensor |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1058298A (en) * | 1990-07-19 | 1992-01-29 | 涂相征 | A kind of silicon film capacitor pressure sensor and manufacture method thereof |
| CN2667667Y (en) * | 2003-08-22 | 2004-12-29 | 沈阳仪表科学研究院 | Silicon capacitive pressure sensor |
| CN101449347A (en) * | 2006-04-13 | 2009-06-03 | Lv传感器股份有限公司 | Capacitive micro- electro-mechanical sensors with single crystal silicon electrodes |
| CN102062662A (en) * | 2010-11-05 | 2011-05-18 | 北京大学 | Monolithic integrated SiC MEMS (Micro-Electro-Mechanical Systems) pressure sensor and production method thereof |
| CN201993195U (en) * | 2010-12-29 | 2011-09-28 | 沈阳仪表科学研究院 | Silicon capacitance pressure difference sensor capable of outputting multiple parameters |
| CN104062044A (en) * | 2013-03-20 | 2014-09-24 | 北京大学 | Micro mechanical differential capacitive pressure gauge |
| CN104677528A (en) * | 2015-03-13 | 2015-06-03 | 中国电子科技集团公司第二十四研究所 | Capacitive pressure sensor and preparation method thereof |
| CN104977103A (en) * | 2014-04-07 | 2015-10-14 | 英飞凌科技股份有限公司 | Force feedback loop for pressure sensors |
| CN104990648A (en) * | 2015-07-28 | 2015-10-21 | 京东方科技集团股份有限公司 | Pressure sensor and pressure detecting method thereof, and pressure detecting apparatus |
-
2017
- 2017-11-23 CN CN201711181054.2A patent/CN108051134A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1058298A (en) * | 1990-07-19 | 1992-01-29 | 涂相征 | A kind of silicon film capacitor pressure sensor and manufacture method thereof |
| CN2667667Y (en) * | 2003-08-22 | 2004-12-29 | 沈阳仪表科学研究院 | Silicon capacitive pressure sensor |
| CN101449347A (en) * | 2006-04-13 | 2009-06-03 | Lv传感器股份有限公司 | Capacitive micro- electro-mechanical sensors with single crystal silicon electrodes |
| CN102062662A (en) * | 2010-11-05 | 2011-05-18 | 北京大学 | Monolithic integrated SiC MEMS (Micro-Electro-Mechanical Systems) pressure sensor and production method thereof |
| CN201993195U (en) * | 2010-12-29 | 2011-09-28 | 沈阳仪表科学研究院 | Silicon capacitance pressure difference sensor capable of outputting multiple parameters |
| CN104062044A (en) * | 2013-03-20 | 2014-09-24 | 北京大学 | Micro mechanical differential capacitive pressure gauge |
| CN104977103A (en) * | 2014-04-07 | 2015-10-14 | 英飞凌科技股份有限公司 | Force feedback loop for pressure sensors |
| CN104677528A (en) * | 2015-03-13 | 2015-06-03 | 中国电子科技集团公司第二十四研究所 | Capacitive pressure sensor and preparation method thereof |
| CN104990648A (en) * | 2015-07-28 | 2015-10-21 | 京东方科技集团股份有限公司 | Pressure sensor and pressure detecting method thereof, and pressure detecting apparatus |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109060229A (en) * | 2018-06-13 | 2018-12-21 | 中国科学院电子学研究所 | A kind of capacitance pressure transducer, and its manufacturing method |
| CN109060229B (en) * | 2018-06-13 | 2019-12-20 | 中国科学院电子学研究所 | Capacitive pressure sensor and manufacturing method thereof |
| CN108775977A (en) * | 2018-06-21 | 2018-11-09 | 胡波 | Capacitance pressure transducer, based on force balance principle |
| CN111122020A (en) * | 2019-12-31 | 2020-05-08 | 中国科学院微电子研究所 | Capacitive pressure detection device and sensor |
| CN111141424A (en) * | 2019-12-31 | 2020-05-12 | 中国科学院微电子研究所 | Differential capacitance type pressure detection device |
| CN111189562A (en) * | 2019-12-31 | 2020-05-22 | 中国科学院微电子研究所 | High-precision differential capacitance type pressure detection device with USB output |
| CN111141424B (en) * | 2019-12-31 | 2022-10-21 | 中国科学院微电子研究所 | Differential capacitance type pressure detection device |
| CN114046927A (en) * | 2022-01-06 | 2022-02-15 | 南京高华科技股份有限公司 | Closed-loop air pressure sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108051134A (en) | The capacitance pressure transducer, of Closed loop operation mode | |
| US4584885A (en) | Capacitive detector for transducers | |
| CN102072737B (en) | High accuracy capacitive readout circuit with temperature compensation | |
| CN101881785B (en) | Four-folding beam variable area differential capacitance structure micro-acceleration sensor and manufacture method thereof | |
| JP3588276B2 (en) | Sensor signal processing circuit | |
| JPH0672899B2 (en) | Acceleration sensor | |
| CN108775977A (en) | Capacitance pressure transducer, based on force balance principle | |
| CN104515640A (en) | Capacitive MEMS (micro-electromechanical system) pressure sensor | |
| CN106091910A (en) | The detection device of thickness | |
| CN105043422A (en) | MEMS resonant charge sensor with high resolution and wide dynamic range and detection method | |
| CN105136352B (en) | A kind of capacitance pressure transducer, and preparation method thereof | |
| KR20140109384A (en) | Capacitive temperature sensor comprising two capacitors as a voltage divider bridge | |
| CN106133493B (en) | Pressure converter with capacitor connection source electrode | |
| CN103842778B (en) | Surface charge reduction technique for capacitive sensors | |
| US20180038747A1 (en) | Vibration and dynamic acceleration sensing using capacitors | |
| CN104457548B (en) | A kind of non-contact type silicon wafer thickness thinning measurement apparatus | |
| CN101655379A (en) | Ceramic double-capacitance pressure transmitter circuit | |
| CN205066783U (en) | High resolution and wide dynamic range's MEMS resonant mode electric charge sensor | |
| CN207302016U (en) | A kind of capacitive sensing device and its sensor circuit | |
| CN212363227U (en) | MEMS chip-level orthogonal signal eliminating device | |
| CN206504826U (en) | A kind of air type capacitor differential pressure transducer | |
| CN110044389A (en) | A kind of the capacitive array sensor detection circuit and signal processing method of high sensitivity | |
| CN205102961U (en) | Capacitanc pressure sensor | |
| CN113848001B (en) | RF resonance pressure sensor | |
| JPS62147335A (en) | Electric field effect type pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180518 |
|
| RJ01 | Rejection of invention patent application after publication |