CN108047274A - A kind of copper interconnection barrier layer material pyridyl group Mn（Ⅱ）Compound - Google Patents
A kind of copper interconnection barrier layer material pyridyl group Mn（Ⅱ）Compound Download PDFInfo
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- CN108047274A CN108047274A CN201711351136.7A CN201711351136A CN108047274A CN 108047274 A CN108047274 A CN 108047274A CN 201711351136 A CN201711351136 A CN 201711351136A CN 108047274 A CN108047274 A CN 108047274A
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- pyridyl group
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F13/00—Compounds containing elements of Groups 7 or 17 of the Periodic System
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
- C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
- C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D213/60—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D213/72—Nitrogen atoms
- C07D213/74—Amino or imino radicals substituted by hydrocarbon or substituted hydrocarbon radicals
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
Abstract
The invention discloses a kind of copper interconnection barrier layer material pyridyl group Mn (II) compounds, belong to technical field of microelectronic material.Obtained pyridyl group Mn (II) compound of the present invention may be used as the presoma of CVD/ALD, by chemical vapor deposition (CVD) or atomic layer deposition (ALD) technique, prepare Mn base films such as MnSiOx.Pyridyl group Mn (II) compound (1) simple synthetic method of the present invention, mild condition greatly reduce the synthesis cost of persursor material；(2) there is preferable dissolubility in the organic solvents such as n-hexane, toluene, ether, dichloromethane, tetrahydrofuran so that transport of materials, conveying, process become simple and easy to operate；(3) there are good volatility and a thermal stability, the T of trimethyl silicane aminopyridine manganese presoma under normal pressure50For 255 DEG C, minimum residual volume is up to 3.3%；(4) there is good filming performance, trimethyl silicane aminopyridine manganese presoma is with N2For carrier gas, O2Under the conditions of 450 DEG C of oxygen source, good CVD MnSiOx films can be formed.
Description
Technical field
The present invention relates to a kind of copper interconnection barrier layer material pyridyl group Mn (II) compounds, belong to microelectronic material technology
Field.
Background technology
With the fast development of Information technology, microelectronic component characteristic size constantly reduces.The major semiconductor company in the whole world
Immense strength is all put into the research and development of correlation technique.Wherein, in copper interconnection technology field, Cu metal layers and insulating layer SiO2It
Between, its phase counterdiffusion in order to prevent, process engineering needs to deposit one layer of TaN or WN between themxAs diffusion impervious layer.But
It is with the propulsion of 22nm process nodes, the thickness requirement of diffusion impervious layer also to be improved therewith, it is necessary to which it is down to 1.9nm.So
And TaN or WNxWhen its thickness of thin layer is less than 5nm, they cannot effectively prevent the diffusion of Cu.Therefore, MnOx、
MnSiOyMn-based materials is waited to be increasingly becoming the copper-connection barrier material (20130307150 A1 of US) of a new generation.For example, research hair
The MnSiO of existing 2nm thicknessyThe diffusion of Cu can be efficiently controlled, and its barrier layer formed is to Cu and SiO2It suffers from well
Adhesiveness.(Thin Solid Films,2015,580,56-60；Jpn.J.Appl.Phys.,2014,53,05GA10-1-
05GA10-5) simultaneously, the continuous of device size reduces and device architecture depth-to-width ratio continues to increase the fill surface so that material
Face huge difficulty.Result of study shows that, when the size in hole is less than 60nm, depth-to-width ratio is more than 1:When 1, physical vapour deposition (PVD)
(PVD) technology cannot meet the requirements (this method depositing phase change material at groove opening is very fast, and channel bottom is slower,
The step coverage rate of channel bottom can be caused bad and cause component failure), chemical vapor deposition (CVD) and atomic layer deposition
(ALD) technology becomes new device fabrication techniques.
In CVD/ALD technologies, the property of presoma is most important, it requires presoma to have appropriate thermostabilization
Property and it is higher it is volatile should also have preparation simple simultaneously, transport and store the features such as easy in favor of producing and using.
At present, the presoma of some CVD/ALD Mn has been reported, and the ligand difference connected according to manganese center can be roughly divided into ring
Pentadiene class (ECS Solid State Lett., 2012,2P25-P27；J.Mater.Res., 2004,19,697-706), carbonyl
Base class (J.Cryst.Growth, 1990,101,208-210；Chem.Vap.Depos., 1998., 4,103-107), ring penta 2
Alkene-carbonyl heterozygosis class (J.Mater.Chem., 2000,10,2842-2846；Mater.Chem.Phys.,1997,47,75-77)
And diones (Thin Solid Films, 2015,574,115-119；J.Electrochem.Soc.,1995,142,
3137-3141).Manganese presoma species is relatively limited, and above-mentioned presoma only has cyclopentadiene and cyclopentadiene-carbonyl at present
Base heterozygosis class manganese compound has been reported for preparing MnOx、MnSiOyWait materials.Meanwhile different presomas are because of originals such as technological parameters
Because the composition and performance of the thin-film material finally prepared can be directly affected.Therefore, constantly update what is regenerated in correlative technology field
Under overall background, explore and synthesize further types of CVD/ALD Mn forerunners, to meet the needs of increasingly enhancement/raising, become very
It is critical.
The content of the invention
To solve the above-mentioned problems, the object of the present invention is to provide new copper interconnection barrier layer material pyridyl group Mn
(II) compound, simple synthetic method, synthesis condition are mild, have in n-hexane, toluene, ether, dichloromethane, tetrahydrofuran etc.
There is preferable dissolubility in solvent, there is good volatility and thermal stability, there is good filming performance.
First purpose of the present invention is to provide a kind of pyridyl group Mn (II) compound with general formula (I)：
Wherein, R is hydrogen atom, C1~C6Alkyl, C2~C5Alkenyl, C3~C10
Cycloalkyl, C6~C10Aryl or-Si (R1)3, R1For C1~C6Alkyl.
In one embodiment of the invention, the structure of the compound is：
Second object of the present invention is to provide the preparation method of pyridyl group Mn (II) compound, and the method is specific
Comprise the following steps：
(1) 2-aminopyridine or derivatives thereof is dissolved in reaction dissolvent, 2-aminopyridine or derivatives thereof and reaction
The mass ratio of solvent is 1:10~1:20, it is added under conditions of being kept stirring at -78~0 DEG C in alkyl lithium solution, 2- amino pyrroles
The molar ratio of pyridine or derivatives thereof and lithium alkylide is 1:1~1.2, the concentration of alkyl lithium solution is 1.0~3.0M, and mixing speed is
100~1000 revs/min；Be restored to after room temperature continue to be stirred to react 1~10 it is small when, obtain reaction mixture；The reaction is molten
Agent is n-hexane, toluene, dichloromethane, tetrahydrofuran or ether；
(2) separately according to 2-aminopyridine or derivatives thereof and manganous chloride molar ratio 2:0.9~1.1 ratio, weighs one
Quantitative manganous chloride, and according to manganous chloride mass ratio 1:10~20 ratio adds in tetrahydrofuran solution；
(3) reaction mixture obtained by (1) is added drop-wise in the tetrahydrofuran solution of manganous chloride at -78 DEG C, slowly heated up
To room temperature, heating rate is 0.5~1 DEG C/min, continue to be stirred to react at room temperature 15~25 it is small when；
(4) reaction mixture that step (3) obtains is carried out that volatile matter is removed under reduced pressure, then adds in hexane, toluene, two
Chloromethanes, tetrahydrofuran or ether solvent dissolving, filtering extraction are collected filtrate, and are obtained after being recrystallized repeatedly at -20~30 DEG C
Described pyridyl group Mn (II) compound.
In one embodiment of the invention, the alkyl lithium solution is lithium methide, n-BuLi, the second of tert-butyl lithium
Ether or hexane solution.
Third object of the present invention is to provide application of pyridyl group Mn (II) compound in microelectronic material.
In one embodiment of the invention, the application is to interconnect barrier material for copper.
In one embodiment of the invention, the application is with pyridyl group Mn (II) chemical combination described in claim 1
Object prepares metal or metal alloy film as presoma.
In one embodiment of the invention, the application is with pyridyl group Mn (II) chemical combination described in claim 1
Object prepares metal or metal alloy film as presoma by chemical vapor deposition method.
In one embodiment of the invention, the application is with pyridyl group Mn (II) chemical combination described in claim 1
Object prepares metal or metal alloy film as presoma by atom layer deposition process.
Beneficial effects of the present invention：Before obtained pyridyl group Mn (II) compound of the present invention may be used as CVD/ALD
Body is driven, by chemical vapor deposition (CVD) or atomic layer deposition (ALD) technique, prepares Mn base films such as MnSiOx.Institute of the present invention
Pyridyl group Mn (II) compound stated has the following advantages：(1) simple synthetic method, mild condition greatly reduce preceding material
The synthesis cost of material；(2) there is preferable dissolubility in the organic solvents such as toluene, ether, dichloromethane, tetrahydrofuran, make
Transport of materials, conveying are obtained, process becomes simple and easy to operate；(3) there are good volatility and thermal stability, such as pass through thermogravimetric
(TG) test of the method to material thermal property, the T of trimethyl silicane aminopyridine manganese presoma under normal pressure50For 255 DEG C, more than Minimum Residual
It measures up to 3.3%；(4) there is good filming performance, such as by taking trimethyl silicane aminopyridine manganese presoma as an example, with N2For carrier gas, O2
Under the conditions of 450 DEG C of oxygen source, good CVD MnSiOx films can be formed, sink film controllable-rate system in 4.2~6.2nm/min.
Description of the drawings：
Fig. 1 is trimethyl silicane aminopyridine manganese precursor construction figure；
Fig. 2 is the TG collection of illustrative plates of trimethyl silicane aminopyridine manganese presoma, and abscissa is temperature, unit for DEG C, ordinate is
Weight-loss ratio, unit %；
Fig. 3 is to be schemed using the XPS that trimethyl silicane aminopyridine manganese is CVD film material obtained by presoma；
Fig. 4 is to utilize the scanning electron microscope (SEM) photograph that trimethyl silicane aminopyridine manganese is CVD film material obtained by presoma.
Specific embodiment
In order to be more clearly understood that the technology contents of the present invention, spy lifts following embodiment and is described in detail, and purpose is only
It is to be best understood from the protection domain that present disclosure is not intended to limit the present invention.
The preparation method of pyridyl group Mn (II) compound of the present invention is reacted by formula (I) and carried out：
Embodiment 1
A kind of copper interconnection barrier layer material preparation method of pyridyl group Mn (II) compound, comprises the following steps：
(1) trimethyl silicane aminopyridine is dissolved in tetrahydrofuran solvent, trimethyl silicane aminopyridine and tetrahydrofuran
The mass ratio of solvent is 1:15, the hexane solution of n-BuLi, trimethyl silicane ammonia are added under conditions of being kept stirring at -78 DEG C
The molar ratio of yl pyridines and n-BuLi is 1:1, the concentration of the hexane solution of n-BuLi is 2.5M, mixing speed 800
Rev/min；Be restored to after room temperature continue to be stirred to react 5 it is small when, obtain reaction mixture；
(2) in another bottle according to trimethyl silicane aminopyridine and manganous chloride molar ratio 2:1 weighs a certain amount of two
Manganese chloride and according to mass ratio 1:15 add in tetrahydrofuran solution；
(3) reaction solution obtained by (1) is added drop-wise in the tetrahydrofuran solution of manganous chloride at -78 DEG C, is to slowly warm up to room
Temperature, heating rate are 0.5 DEG C/min, continue to be stirred to react at room temperature 20 it is small when；
(4) reaction mixture that step (3) obtains is carried out that volatile matter is removed under reduced pressure, then adds in n-hexane dissolution,
Filtering extraction collects n-hexane filtrate, and obtains target product after being recrystallized repeatedly at -29 DEG C, and structural formula is：
Yield：60%, fusing point：137~140 DEG C, elemental analysis C, 49.23；H,
6.98；Mn,14.12；N,15.50；Si, 14.27 theoretically elemental analysis value be C, 49.85；H,6.80；Mn,14.25；N,
14.53；Si,14.57.
(5) CVD deposition film；By the use of this presoma as source, the growth parameter(s) used in the process is：Gross pressure：
3.5Torr, N2Flow：100mL/min, O2Air-flow：50mL/min；Sedimentation time：120min, 450 DEG C of depositing temperature, the film that sinks are fast
Rate is：5.5nm/min, prepared XPS figures are shown in Fig. 3.
(6) structural formula of trimethyl silicane aminopyridine manganese presoma is referring to Fig. 1, in toluene, ether, dichloromethane, tetrahydrochysene
There is preferable dissolubility in the organic solvents such as furans so that transport of materials, conveying, process become simple and easy to operate.
(7) by test of thermogravimetric (TG) method to material thermal property, trimethyl silicane aminopyridine manganese presoma under normal pressure
T50For 255 DEG C, for minimum residual volume up to 3.3%, the result is shown in Fig. 2, there is good volatility and thermal stability.
Embodiment 2
A kind of copper interconnection barrier layer material preparation method of pyridyl group Mn (II) compound, comprises the following steps：
(1) by n-butylamino pyridinium dissolution in tetrahydrofuran solvent, n-butylamino pyridine and tetrahydrofuran solvent
Mass ratio be 1:20, the hexane solution of n-BuLi, n-butylamino pyridine are added under conditions of being kept stirring at -78 DEG C
Molar ratio with n-BuLi is 1:1, the concentration of the hexane solution of n-BuLi is 2.5M, and mixing speed is 800 revs/min
Clock；Be restored to after room temperature continue to be stirred to react 5 it is small when, obtain reaction mixture；
(2) in another bottle according to n-butylamino pyridine and manganous chloride molar ratio 2:1 weighs a certain amount of dichloro
Change manganese and according to mass ratio 1:20 add in tetrahydrofuran solution；
(3) reaction solution obtained by (1) is added drop-wise in the tetrahydrofuran solution of manganous chloride at -78 DEG C, is to slowly warm up to room
Temperature, heating rate are 1 DEG C/min, continue to be stirred to react at room temperature 18 it is small when；
(4) reaction mixture that step (3) obtains is carried out that volatile matter is removed under reduced pressure, then adds in n-hexane dissolution,
Filtering extraction collects n-hexane filtrate, and obtains target product after being recrystallized repeatedly at -29 DEG C, and structural formula is：
Yield：65%, fusing point：125~129 DEG C；Elemental analysis is C, 62.13；
H,7.61；Mn,15.24；N,15.02；Theoretically elemental analysis be C, 61.18；H,7.42；Mn,15.55；N,15.86.T50For
262 DEG C, minimum residual volume is up to 4.1%.And have in the organic solvents such as toluene, ether, dichloromethane, tetrahydrofuran compared with
Good dissolubility.
(5) CVD deposition film；By the use of this presoma as source, the growth parameter(s) used in the process is：Gross pressure：
3.5Torr, N2Flow：100mL/min, O2Air-flow：50mL；Sedimentation time：120min, 450 DEG C of depositing temperature, heavy film rate are：
6.2nm/min。
Embodiment 3：
A kind of copper interconnection barrier layer material preparation method of pyridyl group Mn (II) compound, comprises the following steps：
(1) by Cyclohexylamino pyridinium dissolution in tetrahydrofuran solvent, Cyclohexylamino pyridine and tetrahydrofuran solvent
Mass ratio be 1:15, the hexane solution of n-BuLi, Cyclohexylamino pyridine are added under conditions of being kept stirring at -78 DEG C
Molar ratio with n-BuLi is 1:1, the concentration of the hexane solution of n-BuLi is 2.5M, and mixing speed is 500 revs/min
Clock；Be restored to after room temperature continue to be stirred to react 4 it is small when, obtain reaction mixture；
(2) in another bottle according to Cyclohexylamino pyridine and manganous chloride molar ratio 2:1 weighs a certain amount of dichloro
Change manganese and according to mass ratio 1:25 add in tetrahydrofuran solution；
(3) reaction solution obtained by (1) is added drop-wise in the tetrahydrofuran solution of manganous chloride at -78 DEG C, is to slowly warm up to room
Temperature, heating rate are 0.5 DEG C/min, continue to be stirred to react at room temperature 17 it is small when；
(4) reaction mixture that step (3) obtains is carried out that volatile matter is removed under reduced pressure, then adds in n-hexane dissolution, mistake
Filter extraction collects n-hexane filtrate, and obtains target product after being recrystallized repeatedly at -29 DEG C：
Yield：68%, fusing point：140~143 DEG C；Elemental analysis is C, 66.25；H,7.37；Mn,13.15；N,13.23；It is theoretically first
Element analysis is C, and 65.17；H,7.46；Mn,13.55；N,13.82.T50For 248 DEG C, minimum residual volume is up to 2.9%.And in first
There is preferable dissolubility in the organic solvents such as benzene, ether, dichloromethane, tetrahydrofuran.
(5) CVD deposition film；By the use of this presoma as source, the growth parameter(s) used in the process is：Gross pressure：
3.5Torr, N2Flow：100mL/min, O2Air-flow：50mL/min；Sedimentation time：120min, 450 DEG C of depositing temperature, the film that sinks are fast
Rate is：4.2nm/min.
Although the present invention has been described by way of example and in terms of the preferred embodiments, it is not limited to the present invention, any to be familiar with this skill
The people of art without departing from the spirit and scope of the present invention, can do various change and modification, therefore the protection model of the present invention
Enclosing be subject to what claims were defined.
Claims (9)
1. one kind has pyridyl group Mn (II) compound of general formula (I)：
Wherein, R is hydrogen atom, C1~C6Alkyl, C2~C5Alkenyl, C3~C10Cycloalkanes
Base, C6~C10Aryl or-Si (R1)3, R1For C1~C6Alkyl.
2. pyridyl group Mn (II) compound according to claim 1, which is characterized in that the structure of the compound is：
3. the preparation method of pyridyl group Mn (II) compound described in claim 1, it is characterized in that, the described method includes following steps
Suddenly：
(1) 2-aminopyridine or derivatives thereof is dissolved in reaction dissolvent, 2-aminopyridine or derivatives thereof and reaction dissolvent
Mass ratio be 1:10~1:20, under conditions of being kept stirring at -78~0 DEG C add in alkyl lithium solution in, 2-aminopyridine or
The molar ratio of its derivative and lithium alkylide is 1:1~1.2, the concentration of alkyl lithium solution is 1.0~3.0M, mixing speed 100
~1000 revs/min；Be restored to after room temperature continue to be stirred to react 1~10 it is small when, obtain reaction mixture；The reaction dissolvent is
N-hexane, toluene, dichloromethane, tetrahydrofuran or ether；
(2) separately according to 2-aminopyridine or derivatives thereof and manganous chloride molar ratio 2:0.9~1.1 ratio weighs a certain amount of
Manganous chloride, and according to manganous chloride mass ratio 1:10~20 ratio adds in tetrahydrofuran solution；
(3) reaction mixture obtained by (1) is added drop-wise in the tetrahydrofuran solution of manganous chloride at -78 DEG C, is to slowly warm up to room
Temperature, heating rate are 0.5~1 DEG C/min, continue to be stirred to react at room temperature 15~25 it is small when；
(4) reaction mixture that step (3) obtains is carried out that volatile matter is removed under reduced pressure, then adds in hexane, toluene, dichloromethane
Filtrate is collected in alkane, tetrahydrofuran or ether solvent dissolving, filtering extraction, and is obtained after being recrystallized repeatedly at -20~30 DEG C described
Pyridyl group Mn (II) compound.
4. preparation method according to claim 3, which is characterized in that the alkyl lithium solution for lithium methide, n-BuLi,
The ether or hexane solution of tert-butyl lithium.
5. application of pyridyl group Mn (II) compound in microelectronic material described in claim 1.
6. application according to claim 5, which is characterized in that the application is to interconnect barrier material for copper.
7. application according to claim 6, which is characterized in that the application is with pyridyl group Mn described in claim 1
(II) compound prepares metal or metal alloy film as presoma.
8. the application according to claim 6 or 7, which is characterized in that the application is with pyridyl group described in claim 1
Mn (II) compounds prepare metal or metal alloy film as presoma by chemical vapor deposition method.
9. the application according to claim 6 or 7, which is characterized in that the application is with pyridyl group described in claim 1
Mn (II) compounds prepare metal or metal alloy film as presoma by atom layer deposition process.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102132398A (en) * | 2008-03-21 | 2011-07-20 | 哈佛学院院长等 | Self-aligned barrier layers for interconnects |
| CN102693958A (en) * | 2012-06-21 | 2012-09-26 | 复旦大学 | Copper interconnection structure adopting novel diffusion impervious layer and preparation method thereof |
| CN104558002A (en) * | 2015-01-21 | 2015-04-29 | 江南大学 | Aminopyridine Ge(II) proplastid used as microelectronic phase change memory as well as preparation method of aminopyridine Ge(II) proplastid |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102132398A (en) * | 2008-03-21 | 2011-07-20 | 哈佛学院院长等 | Self-aligned barrier layers for interconnects |
| CN102693958A (en) * | 2012-06-21 | 2012-09-26 | 复旦大学 | Copper interconnection structure adopting novel diffusion impervious layer and preparation method thereof |
| CN104558002A (en) * | 2015-01-21 | 2015-04-29 | 江南大学 | Aminopyridine Ge(II) proplastid used as microelectronic phase change memory as well as preparation method of aminopyridine Ge(II) proplastid |
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