CN108039399A - A kind of LED chip for improving fluorescent efficiency - Google Patents
A kind of LED chip for improving fluorescent efficiency Download PDFInfo
- Publication number
- CN108039399A CN108039399A CN201711260896.7A CN201711260896A CN108039399A CN 108039399 A CN108039399 A CN 108039399A CN 201711260896 A CN201711260896 A CN 201711260896A CN 108039399 A CN108039399 A CN 108039399A
- Authority
- CN
- China
- Prior art keywords
- chip
- fluorescent
- led
- light
- reflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
A kind of LED chip for improving fluorescent efficiency, it is characterised in that including：LED luminescence units on package substrate, the fluorescent reflection film being attached to above LED luminescence unit light-emitting surfaces and the fluorescent powder for being covered in fluorescent reflection film surface；The fluorescent reflection film is by the different transparent material of the two kinds of refractive index multilayer film that alternately superposition, periodic arrangement form；The ratio between refractive index of described two transparent materials, high-index material and low-index material is more than 1.2 and less than 2；The light that the fluorescent reflection film sends LED luminescence units has high transmittance and antiradar reflectivity, has low transmission and high reflectance to the light that fluorescent powder is sent.
Description
Technical field
The present invention relates to the LED chip in LED chip field, more particularly to mixed light of fluorescent powder.
Background technology
Light emitting diode (LED) is a kind of important solid state lighting device.The LED component of mainstream is drawn according to its material system
Divide, infrared, the red yellow light LED of GaAs, GaP system, and bluish-green, the ultraviolet leds of GaN, AlGaN system can be divided into.
The important application model of one of them of LED chip is：The short-wavelength light excitation fluorescence that LED chip is sent sends length
The light of wavelength, right latter two light mix light extraction.Particularly blue-light LED chip and red, yellow phosphor combination, it is white can to mix outgoing
Light；The structure has a wide range of applications in lighting area.Fluorescent powder coated technique can apply the position relative to chip according to it
Put and be divided into proximity coating and away from two kinds of techniques of formula.Wherein proximity coated technique refers to that fluorescent powder is directly overlayed on chip
Side, common method have dispensing coating process, guarantor's type coating process, wafer-level packaging cladding process etc..Wherein the one of proximity cladding process
A problem is：And the light of fluorescent powder stimulated emission can be propagated to all directions, since fluorescent powder off-chip piece is close, to chip direction
The part fluorescence of transmitting can enter the inside of chip, vertical to be lost by chip absorption.The phenomenon restricts the extraction yield of fluorescence
Improve, while the temperature of chip is increased.Away from formula it is fluorescent powder coated make fluorescent powder be spaced apart with LED chip one section away from
From so that reducing fluorescence enters chip, so as to reduce chip to a certain extent to fluorescent absorption, improving light extraction, but introduce
Encapsulation volume can not do this small problem.
The present invention is lost on this in the fluorescent absorption for solving the problems, such as LED chip, with being designed by correcting encapsulating structure
Thinking is different, and another thinking is realized by the design on chip structure.For example, there is a patent (application publication number
02738330A) refer to, one is made in LED formal dress chip substrates by multiple and different centre wavelength DBR (distributed Braggs
Catoptric arrangement) the wide range speculum formed is combined, and another patent (application publication number CN 103441198A) refers to, in LED
Wide range DBR speculums are prepared above the transparent conductive film layer of flip-chip；The operation principle of two methods is by into core
The fluorescence of piece can reflect chip again by broadband reflecting mirror, so as to reduce absorption of the chip to fluorescence.But enter LED
The yellow light of chip only has part finally to reflect chip, and remainder can finally be inhaled in portion by multiple reflections in the chip
Receive.In second patent, also need to prepare another group of electricity with DBR lower electrode unicom above it after preparing wide range DBR
Pole, since the thickness glue of wide range DBR is thick, generally more than 3 μm, this increased the technology difficulty for causing electrode to prepare.
The content of the invention
It is also chip structure design that the present invention, which solves the problems, such as that the fluorescent absorption of LED chip loses this thinking,.It is different from
The fluorescence of chip this structure design is reflected into using wide range DBR, chip structure of the invention design is：In chip light-emitting face
Top prepares a layer-selective reflective film, and specific technical solution is as follows：
A kind of LED chip for improving fluorescent efficiency, including：LED luminescence units on package substrate, be attached to
Fluorescent reflection film above LED luminescence unit light-emitting surfaces and the fluorescent powder for being covered in fluorescent reflection film surface；The fluorescence
Reflective film is by the different transparent material of the two kinds of refractive index multilayer film that alternately superposition, periodic arrangement form；It is described two
The ratio between refractive index of transparent material, high-index material and low-index material is more than 1.2 and less than 2；The fluorescent reflection is thin
The light that film sends LED luminescence units has high transmittance and antiradar reflectivity, has low transmission and the height anti-to the light that fluorescent powder is sent
Penetrate rate.
The LED luminescence units are the formal dress fabric chip of light extraction, the inverted structure core of substrate light-emitting directions at the top of extension
One kind in the thin-film LED of two EDS maps of piece or electrode.
The fluorescent reflection film includes a distribution type Bragg reflection structure；The Distributed Bragg Reflection structure
Reflection kernel wavelength using the light that fluorescent powder is sent as setting, and be setting high-index material with the 1/4 of reflection wavelength length
With the optical thickness of low-index material, and then the geometric thickness of high-index material and low-index material is set；Described point
The stacking fold of cloth Bragg reflection structure is more than or equal to 4.
The fluorescent reflection film includes the different Distributed Bragg Reflection structure of multigroup reflection kernel wavelength, is setting
Reflection kernel wavelength nearby the light of wave band has high reflectance and low transmission, its all band has antiradar reflectivity and high transmittance.
The fluorescent reflection film is formed using the single bandpass structures of non-1/4 wavelength system, to transmit the wavelength of wave band
1/4 be setting high-index material and the optical thickness of low-index material, and then set high-index material and low refraction
The geometric thickness of rate material：
If：Transmit wave band reference wavelength λT, the refractive index of low-index material is nL, geometric thickness LT, then its optics is thick
Spend for LTnL, the refractive index of high-index material is nH, geometric thickness HT, then its optical thickness is HTnH,
Because LTnL=HTnH=1/4 (λT), draw LT=1/4* λT/nL, HT=1/4* λT/nH；
With 2HT_LTIt is overlapped for a superposition cycle, stacking fold is more than or equal to 4.
The outermost layer of the fluorescent reflection film is additionally provided with one layer of outer membrane, and the outer membrane is made of the low-index material,
Its thickness is the 1/2 of the geometric thickness of the low-index material.
The LED luminescence units are also provided with metallic mirror or Distributed Bragg Reflection structure reflecting mirror.
A kind of preparation method using inverted structure chip for the LED chip for improving fluorescent efficiency：
S1：In substrate deposition LED epitaxial structure.
S2：LED epitaxial structure upper surface deposits transparent conductive film as current extending.
S3：Complete the preparation of flip-chip N-type, P-type electrode.
S4：Attenuated polishing substrate.
S5：Fluorescent reflection film is made on substrate burnishing surface.
S6：Scribing splitting is carried out to chip, splits chip.
A kind of preparation method using formal dress fabric chip for the LED chip for improving fluorescent efficiency：
S1：In substrate deposition LED epitaxial structure.
S2：LED epitaxial structure upper surface deposits transparent conductive film as current extending.
S3：Complete the preparation of positive cartridge chip N-type, P-type electrode.
S4：Fluorescent reflection film is made in the top of the electrode direction of chip.
S5：Expose metal in the point perforate of P, N bonding wire.
S6：Adjust N-type, P-type electrode pad pad thickness.
S7：Attenuated polishing substrate；Blue light Distributed Bragg Reflection structure reflectance coating is made below substrate.
S8：Scribing splitting is carried out to chip, splits chip.
A kind of preparation method using thin-film LED for the LED chip for improving fluorescent efficiency：
S1：In substrate deposition LED epitaxial structure.
S2：Complete the preparation of vertical cartridge chip N-type, P-type electrode.
S3：Fluorescent reflection film is made above light-emitting surface.
S4：Expose metal in the bonding wire point perforate of light-emitting surface lateral electrode.
S5：Adjust the thickness of the pad pad of light-emitting surface lateral electrode.
S6：Scribing splitting is carried out to chip, splits chip.
The beneficial effect reached of the present invention：LED chip with fluorescent reflection film can effective reflected fluorescent light wave band
Light, while there is high-permeability to the light of LED chip emission band.Such design can stop that fluorescence enters in chip
Portion, fluorescence losses are minimized；And the extraction to chip light emitting will not have a negative impact.Especially in the application of flip-chip
In the case of, patent CN 103441198A are contrasted, its wide range DBR speculums can be simplified to single blue light dbr structure, greatly
The thickness for reducing this layer, subsequent technique difficulty is decreased, yield rate rise.
Brief description of the drawings
Fig. 1 is the LED core chip package figure using fluorescent reflection film.
Fig. 2 is application of the fluorescent reflection film on inverted structure chip.
Fig. 3 is application of the fluorescent reflection film on traditional structure chip.
Fig. 4 is application of the fluorescent reflection film on thin-film LED.
Fig. 5 is single dbr structure fluorescent reflection membrane structure diagram.
Fig. 6 is the fluorescent reflection membrane structure diagram of bandpass structures.
Fig. 7 is typical white LED chip luminescent spectrum.
Fig. 8 is white-light LED with high color rendering index chip light emitting spectrum.
Fig. 9 is the fluorescent reflection film reflectivity analogue data of single dbr structure.
Figure 10 is the fluorescent reflection film reflectivity analogue data of bandpass structures.
Description of reference numerals
1 --- fluorescent reflection film
2 --- LED luminescence units (chip)
3 --- package substrate
4 --- fluorescent powder coat
5 --- inverted structure LED chip
6 --- formal dress structure LED chip
7 --- light emitting diode (LED) chip with vertical structure
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of not making the creative labor
Embodiment, belongs to the scope of protection of the invention.
A kind of LED chip for improving fluorescent efficiency, as shown in Figure 1, including：LED hairs on package substrate 3
Light unit 2, the fluorescent reflection film 1 being attached to above 2 light-emitting surface of LED luminescence units and it is covered in 1 surface of fluorescent reflection film
Fluorescent powder 4；The fluorescent reflection film 1 is that alternately superposition, periodicity are arranged by two kinds of larger transparent materials of refractive index difference
The multilayer film of composition is arranged, there is the band general character, the light sent to the LED luminescence units 2 has high transmittance, and to the fluorescent powder
4 light sent have high reflectance.
As shown in Fig. 2-Fig. 4, the LED luminescence units 2 can be the formal dress fabric chip of light extraction, substrate at the top of extension
Any of thin-film LED of two EDS maps of inverted structure chip or electrode of light-emitting directions.
After completing to encapsulate, outside can cover layer of fluorescent powder 4.The function of fluorescent reflection film 1 is：Effectively reflect glimmering
Light, avoids fluorescence from being absorbed into chip；Fluorescent reflection film 1 does not hinder the luminous light extraction of LED luminescence units 2 at the same time.
Especially, for blue chip plus Huang, this service condition of white light LED part of red light fluorescent powder composition, it is sent out
Light spectrum as shown in Figure 7 and Figure 8, is designed as the concrete function of fluorescent reflection film 1：Light to 400~500nm wave bands is in height
Through characteristic, the light to 500~700nm wave bands is in high reflection characteristic.
To achieve the above object, fluorescent reflection film 1 is by the different transparent material of two kinds of refractive index, according to the thickness of setting
Degree, is alternately superimposed the multilayer film of periodic arrangement composition.Usually, forming 1 sub-layer material of fluorescent reflection film can be：
SiO2, SiNx, TiO2, Ta2O5, Al2O3, Ga2O3, AlGaN, GaN transparent materials.
The structural design scheme that the present invention provides fluorescent reflection film 1 is as follows：
The first scheme：Use one group of dbr structure superposition composition fluorescent reflection film 1.
The periodic structure that dbr structure is made of the material of two kinds of different refractivities in a manner of being alternately arranged, every layer of material
The 1/4 of reflection wavelength centered on the optical thickness of material.Its feature is as follows：
Center reflection wavelength is λR；
Low-index material is selected, its refractive index is nL, geometric thickness LR, then its optical thickness is LRnL(optical thickness
Equal to geometric thickness and the product of pellicle film refractive index)；
High-index material is selected, its refractive index is nH, geometric thickness HR, then its optical thickness is HRnH；
(wherein, 1.2<nH/nL<2, if the refractive index difference of height material is too small to cause high reflectance wavelength band
To diminish, difference, which crosses conference, causes high transmittance wavelength band to diminish.)
Because of 1/4, L of reflection wavelength centered on the optical thickness per layer materialRnL=HRnH=1/4 (λR),
Draw：LR=1/4* λR/nL, HR=1/4* λR/nH；
With HR_LRFor a cycle, Repeated m time (m >=4) arranges, as shown in Figure 5.The structure is for λRThe light of neighbouring wave band
There is high reflectance, its all band is in high transmittance.
Fig. 9 illustrates setting λRWhen=600nm, m=12, the reflection characteristic figure of single dbr structure after optimization.Shown in figure
Show, which is in high reflection characteristic in 500~600nm wave bands, is in high transmission characteristic in 300~500nm wave bands.Wherein, in reality
Found in the application of border, low-index material is with 0.5LRIf air contact, simulation effect can be more preferable, therefore thin in fluorescent reflection
The outermost layer of film 1 adds one layer of low-index material, thickness 0.5LR.And when input simulator is simulated, then write a Chinese character in simplified form into
0.5LR_HR_0.5LRIt is overlapped for a cycle.
Second scheme：, can be with using multigroup different reflection kernel wavelength dbr structures superposition composition fluorescent reflection films 1
Band logical is adjusted according to being actually needed and with resistance region.Its main feature structure is as follows：Different reflection kernel wavelength (such as λR1、
λR2、λR3) several DBR superposition.The structure is for reflected waveband (λR1、λR2、λR3) nearby the light of wave band have high reflectance, other
Wave band is in high transmittance.
The third scheme：Use the bandpass filtering structure composition fluorescent reflection film 1 of non-1/4 wavelength system, one of which
Specific design is as follows：
If：Transmit wave band reference wavelength λT；
Low-index material is selected, its refractive index is nL, geometric thickness LT, then its optical thickness is LTnL；
High-index material is selected, its refractive index is nH, geometric thickness HT, then its optical thickness is HTnH；
(wherein, 1.2<nH/nL<2, if the refractive index difference of height material is too small to cause high reflectance wavelength band
To diminish, difference, which crosses conference, causes high transmittance wavelength band to diminish.)
To transmit wave band reference wavelength λT1/4 for setting optical thickness, LTnL=HTnH=1/4 (λT),
Draw：LT=1/4* λT/nL, HT=1/4* λT/nH；
With 2HT_LTFor a cycle, Repeated m time (m >=4) arranges, as shown in Figure 6.The structure is for λTNeighbouring wave band
Light has high transmission to penetrate rate, to 1.5 λTWith 0.75 λTThe light of neighbouring wave band is in high reflectance.
Especially, feature parameter"λ" is selectedT=400nm, m=12；Its reflection characteristic analog result such as Figure 10 institute after optimizing
Show：For the structure in 500~600nm, 250~300nm wave bands are in high reflection characteristic, special in high transmission in 350~500nm wave bands
Property.Wherein, find in practical applications, low-index material is with 0.5LTIf air contact, simulation effect can be more preferable, therefore
One layer of low-index material, thickness 0.5L are added in the outermost layer of fluorescent reflection film 1T.And when input simulator is simulated,
Then write a Chinese character in simplified form into 0.5LT_2HT_0.5LTIt is overlapped for a cycle.
Specific white light prioritization scheme is shown in embodiment 1 and embodiment 2.
Embodiment 1：
By SiO2/TiO2Single DBR is formed as fluorescent reflection film, white light prioritization scheme.
If reflection kernel wavelength XR=600nm.
Use：Low-index material：SiO2Refractive index is 1.46, LR=1/4* λR/nL=103nm；
High-index material：TiO2Refractive index is 2.31, HT=1/4* λT/nH=65nm.
With HR_LRFor a cycle, specific periodic formation is：0.5LR_HR_0.5LR。
Periodicity：M=12.
Analog result：Attached drawing 9.
Embodiment 2：
By SiO2/TiO2The single bandpass structures of non-1/4 wavelength system are formed as fluorescent reflection film, white light prioritization scheme.
If transmission reference wavelength XT=400nm.
Use：Low-index material：SiO2Refractive index is 1.46, LR=1/4* λR/nL=68nm；
High-index material：TiO2Refractive index is 2.31, HT=1/4* λT/nH=39nm.
With 2HT_LTFor a cycle, specific periodic formation is：0.5LT_2HT_0.5LT。
Periodicity：M=12.
Analog result：See attached drawing 10.
Usually, fluorescent reflection film 1 can successively be prepared using following methods：Electron beam evaporation, chemical vapor deposition,
Plasma sputtering.
Usually, pattern processing is carried out to fluorescent reflection film 1, following two method can be used：
Lithographic method：Mask pattern is prepared on 1 surface of fluorescent reflection film using photoresist or metal, uses coupling plasma
Body dry etching film exposed region, finally removes mask layer.Prepare the pattern of fluorescent reflection film 1.
Stripping means：Make barrier pattern with photoresist on chip light-emitting face first, then prepare fluorescent reflection film
1, finally using stripping technology stripping photoresist and its material of top, prepare the pattern of fluorescent reflection film 1.
The preparation method of the LED chip of the present invention for improving fluorescent efficiency, specific steps are shown in embodiment 3-implementation
Example 7.
Embodiment 3：
Fluorescent reflection film 1 is applied on Sapphire Substrate blue-ray LED metallic mirror flip-chip, it is comprised the following steps that：
Step 1：LED epitaxial structure is deposited in Sapphire Substrate.
Step 2：(optional) LED epitaxial structure upper surface deposits TCL (transparent conductive film) layer as current extending.
Step 3：The MESA steps for making chip (refer in LED preparation process, using the method for dry etching, by LED core
The region that piece is given out light beyond region, which is etched to, exposes N-GaN.), define P, N electrode section.Etching TCL defines TCL patterns.
Step 4：Metallic mirror is made on the domain of p type island region.
Step 5：Make insulating protective layer, the perforate at P, N electrode position.
Step 6：P interconnecting electrodes and N interconnecting electrodes are made respectively.
Step 7：Second layer insulating protective layer is made, in relevant position perforate.
Step 8：Make welding electrode.
Step 9：The attenuated polishing Sapphire Substrate back side
Step 10：The Sapphire Substrate back side after a polish prepares fluorescent reflection film 1
Step 11：Scribing splitting is carried out to chip, splits chip.
Embodiment 4：
Sapphire Substrate blue-ray LED, applies fluorescent reflection film 1 on DBR speculum flip-chips, it is comprised the following steps that：
Step 1：LED epitaxial structure is deposited in Sapphire Substrate.
Step 2：LED epitaxial structure upper surface deposits TCL layers and is used as current extending.
Step 3：The MESA steps of chip are made, define P, N electrode section.Etching TCL defines TCL patterns.
Step 4：P-type lead electrode is prepared above TCL layers
Step 5：Single blue light DBR speculums are made on the domain of p type island region, the perforate at P, N electrode position.
Step 6：P interconnecting electrodes and N interconnecting electrodes are made respectively.
Step 7：Insulating protective layer is made, in relevant position perforate.
Step 8：Make welding electrode.
Step 9：The attenuated polishing Sapphire Substrate back side
Step 10：The Sapphire Substrate back side after a polish prepares fluorescent reflection film 1
Step 11：Scribing splitting is carried out to chip, splits chip.
Embodiment 5：
Fluorescent reflection film 1 is applied on Sapphire Substrate blue-ray LED traditional structure chip, it is comprised the following steps that：
Step 1：LED epitaxial structure is deposited in Sapphire Substrate.
Step 2：(optional) preparation CBL (current barrier layer)
Step 3：LED epitaxial structure upper surface deposits TCL layers and is used as current extending.
Step 4：The MESA steps of chip are made, define P, N electrode section.Etching TCL defines TCL patterns.
Step 5：Manufacture p-type, N-type lead electrode.
Step 6：Fluorescent reflection film 1 is made above chip, exposes metal in the point perforate of P, N bonding wire.
Step 7：Increase as needed or the pad PAD (pad on printed circuit board (PCB)) for not increasing N-type, P-type electrode
Thickness.
Step 8：Attenuated polishing Sapphire Substrate；Blue light DBR reflectance coatings are made below substrate.
Step 9：Scribing splitting is carried out to chip, splits chip.
Embodiment 6：
Fluorescent reflection film 1 is applied in Sapphire Substrate, Si substrate desquamation technique blue-ray LED thin-film LEDs, its is specific
Step is as follows：
Step 1：LED epitaxial structure is deposited in Sapphire Substrate or silicon substrate.
Step 2：(optional) LED epitaxial structure upper surface sink TCL layers be used as current extending.
Step 3：Using dry etching method, chip design is defined, the pitch area between chip is etched into substrate.
Step 4：Metallic reflective electrodes are made on the domain of p type island region.
Step 5：The upper surface (metallic reflective electrodes) of chip is bonded to metal substrate.
Step 6：Peel off Sapphire Substrate or silicon substrate.
Step 7：U-GaN is etched until N-GaN layers by N electrode pattern, makes N-type electrode.
Step 8：In U-GaN and N electrode fluorescent reflection film 1 prepared above, expose metal in N electrode position of bonding wire perforate.
Step 9：Increase as needed or the thickness for the pad PAD for not increasing N-type electrode.
Step 10：Scribing splitting is carried out to chip, splits chip.
Embodiment 7：
Fluorescent reflection film 1 is applied on SiC substrate blue-ray LED thin-film LED, it is comprised the following steps that：
Step 1：LED epitaxial structure is deposited on sic substrates.
Step 2：(optional) LED epitaxial structure upper surface deposits TCL layers and is used as current extending.
Step 3：Using dry etching method, chip design is defined, the pitch area between chip is etched into substrate.
Step 4：P-type electrode is made in wafer epitaxial layer surface.
Step 5：Attenuated polishing SiC substrate.
Step 6：Make metallic reflective electrodes in SiC substrate.
Step 7：SiC substrate is bonded to metal substrate.
Step 8：In P-GaN and P electrode fluorescent reflection film 1 prepared above, expose metal in P electrode position of bonding wire perforate.
Step 9：Increase as needed or the thickness for the pad PAD for not increasing P-type electrode.
Step 10：Scribing splitting is carried out to chip, splits chip.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
The present invention is described in detail, it will be understood by those of ordinary skill in the art that：It still can be to previous embodiment
Described technical solution is modified, or carries out equivalent substitution to which part technical characteristic；And these are changed or replace
Change, the essence of appropriate technical solution is departed from the spirit and scope of technical solution of the embodiment of the present invention.
Claims (10)
- A kind of 1. LED chip for improving fluorescent efficiency, it is characterised in that including：LED luminescence units on package substrate, the fluorescent reflection film being attached to above LED luminescence unit light-emitting surfaces and It is covered in the fluorescent powder of fluorescent reflection film surface；The fluorescent reflection film is by the different transparent material of the two kinds of refractive index multilayer that alternately superposition, periodic arrangement form Film；The ratio between refractive index of described two transparent materials, high-index material and low-index material is more than 1.2 and less than 2；The light that the fluorescent reflection film sends LED luminescence units has high transmittance and antiradar reflectivity, and fluorescent powder is sent Light has low transmission and high reflectance.
- A kind of 2. LED chip for improving fluorescent efficiency according to claim 1, it is characterised in that：The LED luminescence units are the formal dress fabric chip of light extraction at the top of extension, the inverted structure chip of substrate light-emitting directions or One kind in the thin-film LED of two EDS maps of electrode.
- A kind of 3. LED chip for improving fluorescent efficiency according to claim 2, it is characterised in that：The fluorescent reflection film includes a distribution type Bragg reflection structure；Reflection kernel wavelength of the Distributed Bragg Reflection structure using the light that fluorescent powder is sent as setting, and with reflection wavelength The 1/4 of length is setting high-index material and the optical thickness of low-index material, and then sets high-index material and low The geometric thickness of refraction materials；The stacking fold of the Distributed Bragg Reflection structure is more than or equal to 4.
- A kind of 4. LED chip for improving fluorescent efficiency according to claim 3, it is characterised in that：The fluorescent reflection film includes the different Distributed Bragg Reflection structure of multigroup reflection kernel wavelength, in the anti-of setting The light for penetrating wave band near centre wavelength has high reflectance and low transmission, its all band has antiradar reflectivity and high transmittance.
- A kind of 5. LED chip for improving fluorescent efficiency according to claim 2, it is characterised in that：The fluorescent reflection film is formed using the single bandpass structures of non-1/4 wavelength system, to transmit the 1/4 of the wavelength of wave band To set the optical thickness of high-index material and low-index material, and then set high-index material and low-index material Geometric thickness：If：Transmit wave band reference wavelength λT, the refractive index of low-index material is nL, geometric thickness LT, then its optical thickness be LTnL, the refractive index of high-index material is nH, geometric thickness HT, then its optical thickness is HTnH,Because LTnL=HTnH=1/4 (λT), draw LT=1/4* λT/nL, HT=1/4* λT/nH；With 2HT_LTIt is overlapped for a superposition cycle, stacking fold is more than or equal to 4.
- A kind of 6. LED chip of raising fluorescent efficiency according to claim 3 or 5, it is characterised in that：The outermost layer of the fluorescent reflection film is additionally provided with one layer of outer membrane；The outer membrane is made of the low-index material, it is thick Spend 1/2 of the geometric thickness for the low-index material.
- 7. according to a kind of LED chip for improving fluorescent efficiency of claim 1-6 any one of them, it is characterised in that：The LED luminescence units are also provided with metallic mirror or Distributed Bragg Reflection structure reflecting mirror.
- A kind of 8. preparation side using inverted structure chip for the LED chip for improving fluorescent efficiency according to claim 2 Method, it is characterised in that：S1：In substrate deposition LED epitaxial structure；S2：LED epitaxial structure upper surface deposits transparent conductive film as current extending；S3：Complete the preparation of flip-chip N-type, P-type electrode；S4：Attenuated polishing substrate；S5：Fluorescent reflection film is made on substrate burnishing surface；S6：Scribing splitting is carried out to chip, splits chip.
- A kind of 9. preparation side using formal dress fabric chip for the LED chip for improving fluorescent efficiency according to claim 2 Method, it is characterised in that：S1：In substrate deposition LED epitaxial structure；S2：LED epitaxial structure upper surface deposits transparent conductive film as current extending；S3：Complete the preparation of positive cartridge chip N-type, P-type electrode；S4：Fluorescent reflection film is made in the top of the electrode direction of chip；S5：Expose metal in the point perforate of P, N bonding wire；S6：Adjust N-type, P-type electrode pad pad thickness；S7：Attenuated polishing substrate；Blue light Distributed Bragg Reflection structure reflectance coating is made below substrate；S8：Scribing splitting is carried out to chip, splits chip.
- A kind of 10. preparation side using thin-film LED for the LED chip for improving fluorescent efficiency according to claim 2 Method, it is characterised in that：S1：In substrate deposition LED epitaxial structure；S2：Complete the preparation of vertical cartridge chip N-type, P-type electrode；S3：Fluorescent reflection film is made above light-emitting surface；S4：Expose metal in the bonding wire point perforate of light-emitting surface lateral electrode；S5：Adjust the thickness of the pad pad of light-emitting surface lateral electrode；S6：Scribing splitting is carried out to chip, splits chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711260896.7A CN108039399A (en) | 2017-12-04 | 2017-12-04 | A kind of LED chip for improving fluorescent efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711260896.7A CN108039399A (en) | 2017-12-04 | 2017-12-04 | A kind of LED chip for improving fluorescent efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108039399A true CN108039399A (en) | 2018-05-15 |
Family
ID=62095497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711260896.7A Pending CN108039399A (en) | 2017-12-04 | 2017-12-04 | A kind of LED chip for improving fluorescent efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108039399A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109742210A (en) * | 2018-12-28 | 2019-05-10 | 中山大学 | A kind of UV LED chip and preparation method thereof |
| CN109935674A (en) * | 2019-03-29 | 2019-06-25 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101207173A (en) * | 2007-11-30 | 2008-06-25 | 中国计量学院 | Light emitting diode with one-dimensional photon crystal |
| CN101297412A (en) * | 2005-09-28 | 2008-10-29 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation-emitting optoelectronic component |
| CN101451673A (en) * | 2007-12-07 | 2009-06-10 | 索尼株式会社 | Illumination apparatus, color conversion device, and display apparatus |
| CN102163684A (en) * | 2010-02-18 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device package and lighting system |
| CN102683547A (en) * | 2011-03-15 | 2012-09-19 | 隆达电子股份有限公司 | Light emitting diode packaging structure |
-
2017
- 2017-12-04 CN CN201711260896.7A patent/CN108039399A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101297412A (en) * | 2005-09-28 | 2008-10-29 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation-emitting optoelectronic component |
| CN101207173A (en) * | 2007-11-30 | 2008-06-25 | 中国计量学院 | Light emitting diode with one-dimensional photon crystal |
| CN101451673A (en) * | 2007-12-07 | 2009-06-10 | 索尼株式会社 | Illumination apparatus, color conversion device, and display apparatus |
| CN102163684A (en) * | 2010-02-18 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device package and lighting system |
| CN102683547A (en) * | 2011-03-15 | 2012-09-19 | 隆达电子股份有限公司 | Light emitting diode packaging structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109742210A (en) * | 2018-12-28 | 2019-05-10 | 中山大学 | A kind of UV LED chip and preparation method thereof |
| CN109935674A (en) * | 2019-03-29 | 2019-06-25 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6683003B2 (en) | Semiconductor element, semiconductor device, and method for manufacturing semiconductor element | |
| CN104969365B (en) | Semiconductor light-emitting elements and its manufacture method | |
| US7943948B2 (en) | High efficient phosphor-converted light emitting diode | |
| CN106920790A (en) | A kind of full-color micro-display device and preparation method thereof | |
| CN103904174B (en) | The manufacture method of light-emitting diode chip for backlight unit | |
| EP2515353A2 (en) | Light emitting diode package and lighting device with the same | |
| US9865783B2 (en) | Distributed Bragg reflector on an aluminum package for an LED | |
| JP2018010958A (en) | Light-emitting device, method for manufacturing the same, and display device | |
| JP2005183911A (en) | Nitride semiconductor light-emitting element and method of manufacturing the same | |
| CN101369622A (en) | Light-emitting device | |
| CN109326686A (en) | A kind of production method of upside-down mounting LED chip | |
| CN109728143A (en) | Light-emitting diode chip for backlight unit, light emitting diode and method for manufacturing light-emitting diode chip | |
| CN109935674A (en) | A kind of flip LED chips and preparation method thereof | |
| CN104091869A (en) | Light emitting diode chip and manufacturing method thereof | |
| CN104678469A (en) | Graded-index material distributed bragg reflector (DBR) and manufacturing method thereof | |
| CN102738330A (en) | High-white-light luminous efficiency gallium nitride LED pipe core structure | |
| CN109742210A (en) | A kind of UV LED chip and preparation method thereof | |
| CN111883626A (en) | Flip-chip light-emitting diode capable of changing forward light intensity and lateral light intensity and preparation method thereof | |
| CN108039399A (en) | A kind of LED chip for improving fluorescent efficiency | |
| CN107644929A (en) | Light emitting element | |
| CN107968143A (en) | A kind of blue LED flip chip with high reflectance wide range oxide speculum and preparation method thereof | |
| TWI611601B (en) | Radiation-emitting semiconductor wafer, optoelectronic component having radiation-emitting semiconductor wafer, and method for coating radiation-emitting semiconductor wafer | |
| JP6582738B2 (en) | Light emitting element and light emitting device | |
| CN209071375U (en) | Light emitting diode | |
| CN107369747B (en) | A kind of LED chip and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180515 |
|
| WD01 | Invention patent application deemed withdrawn after publication |