CN107946201A - A kind of preparation method of the wire bonding pad structure based on local electro-deposition - Google Patents
A kind of preparation method of the wire bonding pad structure based on local electro-deposition Download PDFInfo
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- CN107946201A CN107946201A CN201711377901.2A CN201711377901A CN107946201A CN 107946201 A CN107946201 A CN 107946201A CN 201711377901 A CN201711377901 A CN 201711377901A CN 107946201 A CN107946201 A CN 107946201A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Abstract
A kind of preparation method of the wire bonding pad structure based on local electro-deposition, belongs to technical field of electronic encapsulation.The method is as follows：Lead material and bond pad surface are cleaned by ultrasonic；The termination of lead material is placed on to the center of bond pad surface；According to pad metal species, matched metal electrodeposition solution is selected, plating processing is carried out in the junction local of pad and lead；Regulate and control electro-deposition current density and electroplating time, the pattern of control local electro-deposition bonding connector, obtains expected bonding welding point structure.In lead key closing process, substitute conventional metals lead material using new nonmetallic and composite material, interconnection resistance can be greatly reduced, improve circuit speed and efficiency, improve the reliability of electronic device.This method is applied in the bonding technology of different bonding pad materials and lead material, can further improve product reliability.Whole bonding process flow is simple, without heating, pressurization and ultrasonic wave added.
Description
Technical field
The invention belongs to technical field of electronic encapsulation, is related to a kind of using nonmetallic or metallic composite lead bonding
A kind of preparation of structure, and in particular to bonding for realizing that lead material is connected with metal pad using local electrochemical deposition method
The preparation method of structure.
Background technology
Electronic chip and integrated circuit use Wire Bonding Technology more with outside lead interconnection, pass through hot pressing, ultrasound, thermoacoustic
Etc. mode, the connection of metal lead wire and pad is realized.The lead material used in conventional wire bonding technology is mostly gold, copper, aluminium
Deng metal, with the continuous development of Electronic Encapsulating Technology, the requirement for integrated level and reliability increasingly increases, and uses electric conductivity
More preferable lead material encapsulates interconnection resistance to reducing, and improving encapsulation power density has great significance.With carbon nanotubes and
Graphene for representative new carbon have better than metal material electric conductivity, while with carbon nanotubes, graphene and
Its composite material as lead material can to avoid/reduce conventional metals lead electronic device military service during electromigration ask
Topic, further increases the reliability of electronic device.Using carbon nanotubes, graphene and its composite material as lead material without
Method uses traditional lead key closing process, can form covering lead by carrying out electroplating processes to lead and pad junction
With the metal layer of pad portion, the lead key closing process of novel lead wire material is realized.Since model may be selected in the species of plating metal
Enclose it is larger, can select with pad same metal carry out electro-deposition, this avoid conventional metals lead material species relatively
It is few, easily generate at bonded interface when lead and different pad metal material, during electronic device use and change between metal
Compound, causes a series of integrity problem.For this reason, design and developing new wire bonding pad structure and preparation process is suitable
The trend for having answered Electronic Encapsulating Technology to develop.
The content of the invention
The purpose of the present invention is to solve existing lead to be connected insecure problem with pad, there is provided one kind uses non-
Metal or composite material carry out the preparation method of wire bonding formation joint design as lead material.With metal lead wire material
Compare, nonmetallic or composite material can not use the mode for applying heat, pressure and ultrasound to realize bonding as lead material, adopt
With the method for plate bonding, you can realize that fast selective interconnects between nonmetallic or composite leg material and pad.
To achieve the above object, the technical solution that the present invention takes is as follows：
A kind of preparation method of the wire bonding pad structure based on local electro-deposition, the method comprise the following steps that：
Step 1：10 ~ 20min of ultrasonic cleaning is carried out respectively to lead material and bond pad surface using ethanol and acetone；
Step 2：The termination of lead material is placed on to the center of bond pad surface；
Step 3：According to pad metal species, matched metal electrodeposition solution is selected, in the connection of pad and lead
Place's local carries out plating processing；
Step 4：Regulating and controlling electro-deposition current density and electroplating time, the electro-deposition of control local is bonded the pattern of connector, it is expected that
Bonding welding point structure.
It is of the invention to be relative to the beneficial effect of the prior art：By using the mode of local electrical-chemistry method, in no heat
Under conditions of pressing without ultrasound, the wire bonding pad structure of articulamentum identical with pad metal, whole bonding welding point knot are obtained
Structure is controllable.The present invention can introduce highly conductive nonmetallic and composite material among lead key closing process, improve current efficiency
While greatly improve the reliability of electronic device.Whole bonding process is connected without heating, no fire damage and mechanical damage, tool
There is technological process simple, bonding speed is fast, suitable for various bonding pad materials, has the articulamentum metal species range of choice big etc. excellent
Point.
Brief description of the drawings
Fig. 1 is fibrous the lead material joint design schematic diagram and sectional view that connection layer height is less than 1/2 lead height；
Fig. 2 is fibrous the lead material joint design schematic diagram and sectional view that connection layer height is equal to 1/2 lead height；
Fig. 3 is fibrous the lead material joint design schematic diagram and sectional view that connection layer height is higher than 1/2 lead height；
Fig. 4 is fibrous the lead material joint design schematic diagram and sectional view that connection layer height is higher than lead height；
Fig. 5 is using fibrous lead material local electro-deposition lead-bonding chip schematic diagram；
Fig. 6 is the foil shape lead material joint design schematic diagram and sectional view that connection layer height is less than 1/2 lead height；
Fig. 7 is the foil shape lead material joint design schematic diagram and sectional view that connection layer height is equal to 1/2 lead height；
Fig. 8 is the foil shape lead material joint design schematic diagram and sectional view that connection layer height is higher than 1/2 lead height；
Fig. 9 is the foil shape lead material joint design schematic diagram and sectional view that connection layer height is higher than lead height；
Figure 10 is to use foil shape lead material local electro-deposition lead-bonding chip schematic diagram.
Embodiment
Technical scheme is further described with reference to the accompanying drawings and examples, but is not limited thereto,
It is every to technical solution of the present invention technical scheme is modified or replaced equivalently, without departing from the spirit and scope of technical solution of the present invention,
It should all cover in protection scope of the present invention.
Embodiment one：What present embodiment was recorded is a kind of wire bonding pad structure based on local electro-deposition
Preparation method, the method comprises the following steps that：
Step 1：10 ~ 20min of ultrasonic cleaning is carried out respectively to lead material and bond pad surface using ethanol and acetone；
Step 2：The termination of lead material is placed on to the center of bond pad surface using micro-nano operating platform, ensures lead
Termination and metal pad good contact, complete to be linked and packed；
Step 3：According to pad metal species, matched metal electrodeposition solution is selected, in the connection of pad and lead
Place's local carries out plating processing；
Step 4：Regulating and controlling electro-deposition current density and electroplating time, the electro-deposition of control local is bonded the pattern of connector, it is expected that
Bonding welding point structure.
Embodiment two：A kind of wire bonding pad knot based on local electro-deposition described in embodiment one
The preparation method of structure, the method further include step 5：After the completion of electro-deposition, to electro-deposition process part, i.e., jointing into
Row Integral cleaning, forms local electro-deposition wire bonding pad structure, dry and test.
Embodiment three：A kind of wire bonding pad knot based on local electro-deposition described in embodiment one
The preparation method of structure, in step 1, selected lead material is highly conductive nonmetallic materials or high-conductivity composite material, described
Highly conductive nonmetallic materials are carbon nanotubes and its fiber or graphene and its lamellar structure；The high-conductivity composite material
Strengthen metal lead wire or graphene body phase composition metal lead for carbon nanotubes, graphene surface.
Embodiment four：A kind of wire bonding pad knot based on local electro-deposition described in embodiment one
The preparation method of structure, in step 2, for connection two kinds of pads is same metals or same metal, the metal are not
Gold, silver, copper, aluminium, nickel or aluminium alloy.
Embodiment five：A kind of wire bonding pad knot based on local electro-deposition described in embodiment one
The preparation method of structure, in step 3, when carrying out plating processing, electric depositing solution should coat the combination of lead ends and pad completely
Place, electric depositing solution should be less than the 2/3 of whole pad in bond pad surface spreading area.
Embodiment six：A kind of wire bonding pad knot based on local electro-deposition described in embodiment five
The preparation method of structure, electro-deposition processing is carried out using electroplating power supply in the junction of lead ends and pad, is formed and pad gold
Belong to the consistent coat of metal of species, realize the connection of lead and metal pad, form electro-deposition wire bonding connector.
Embodiment seven：A kind of wire bonding pad knot based on local electro-deposition described in embodiment one
The preparation method of structure, in step 4, the current density is 0.5 ~ 5A/dm2, electroplating time is 10 ~ 600s.
Embodiment eight：A kind of wire bonding pad knot based on local electro-deposition described in embodiment one
The preparation method of structure, it is characterised in that：In step 4, in welding spot structure the height of articulamentum metallic cover lead material be less than
The half of lead height, the half equal to lead height, the half higher than lead height but high less than lead
Degree coats lead material in itself and completely.Articulamentum cladding height has electroplating current density and electroplating time control.
Embodiment nine：A kind of wire bonding pad knot based on local electro-deposition described in embodiment two
The preparation method of structure, the Integral cleaning are after being cleaned twice using deionized water, to be cleaned one time using ethanol.
Embodiment ten：A kind of wire bonding pad knot based on local electro-deposition described in embodiment two
The preparation method of structure, is dried the welding spot structure after cleaning processing, and drying temperature is 50 ~ 120 DEG C, drying time for 20 ~
300s, then tests its electrical interconnectivity energy.
Embodiment 1：
Step 1：Selection threadiness or wire lead material, such as：Carbon nanotubes, carbon nano-tube fibre, conductive carbon fibre, stone
One kind in black alkene surface enhanced metal lead wire, carbon nanotubes composition metal lead or graphene composition metal lead is as lead
Material.
Step 2：Acetone ultrasonic cleaning 10 minutes is carried out to the lead material of selection.
Step 3：Lead material termination is placed into metal pad, the composition of two of which metal pad is respectively metal A
With metal B, wherein metal A is copper, and metal B is aluminium.
Step 4：Respectively metal is formed in metal A and metal B bond pad surfaces using the mode of acid copper and electric deposition aluminum
Articulamentum, prepares wire bonding pad.
Step 5：The connection layer height of acid copper and electric deposition aluminum is below the half of lead height in solder joint.
As shown in Figure 1.
Step 6：Device surface is cleaned, processing is dried, wire bonding pad structure is completed and prepares.
Embodiment 2：
Step 1：Selection threadiness or wire lead material, such as：Carbon nanotubes, carbon nano-tube fibre, conductive carbon fibre, stone
One kind in black alkene surface enhanced metal lead wire, carbon nanotubes composition metal lead or graphene composition metal lead is as lead
Material.
Step 2：Acetone ultrasonic cleaning 15 minutes is carried out to the lead material of selection.
Step 3：Lead material termination is placed into metal pad, the composition of two of which metal pad is respectively metal A
With metal B, wherein metal A is gold, and metal B is aluminium.
Step 4：Respectively metal is formed in metal A and metal B bond pad surfaces using the mode of deposited Au and electric deposition aluminum
Articulamentum, prepares wire bonding pad.
Step 5：The connection layer height of deposited Au and electric deposition aluminum is equal to the half of lead height in solder joint.Such as
Shown in Fig. 2.
Step 6：Device surface is cleaned, processing is dried, wire bonding pad structure is completed and prepares.
Embodiment 3：
Step 1：Selection threadiness or wire lead material, such as：Carbon nanotubes, carbon nano-tube fibre, conductive carbon fibre, stone
One kind in black alkene surface enhanced metal lead wire, carbon nanotubes composition metal lead or graphene composition metal lead is as lead
Material.
Step 2：Acetone ultrasonic cleaning 10 minutes is carried out to the lead material of selection.
Step 3：Lead material termination is placed into metal pad, the composition of two of which metal pad is respectively metal A
With metal B, wherein metal A is copper, and metal B is copper.
Step 4：Metal connecting layer is formed in metal A and metal B bond pad surfaces using the mode of acid copper, preparation is drawn
Line bonding solder joint.
Step 5：Acid copper connection layer height is above the half of lead height in solder joint.As shown in Figure 3.
Step 6：Device surface is cleaned, processing is dried, wire bonding pad structure is completed and prepares.
Embodiment 4：
Step 1：Selection threadiness or wire lead material, such as：Carbon nanotubes, carbon nano-tube fibre, conductive carbon fibre, stone
One kind in black alkene surface enhanced metal lead wire, carbon nanotubes composition metal lead or graphene composition metal lead is as lead
Material.
Step 2：Acetone ultrasonic cleaning 20 minutes is carried out to the lead material of selection.
Step 3：Lead material termination is placed into metal pad, the composition of two of which metal pad is respectively metal A
With metal B, wherein metal A is copper, and metal B is aluminium.
Step 4：Respectively metal is formed in metal A and metal B bond pad surfaces using the mode of acid copper and electric deposition aluminum
Articulamentum, prepares wire bonding pad.
Step 5：The connection layer height of acid copper and electric deposition aluminum is above lead height in solder joint, can cover completely
Lid lead material.As shown in Figure 4.
Step 6：Device surface is cleaned, processing is dried, wire bonding pad structure is completed and prepares.Complete local electricity
The structure of deposition of wire bonding chip is as shown in Figure 5.
Embodiment 5：
Step 1：Foil-like or ribbon lead material are selected, such as：Graphene, graphene surface enhancing metal lead wire, carbon nanometer
One kind in pipe composition metal lead or graphene composition metal lead is as lead material.
Step 2：Acetone ultrasonic cleaning 10 minutes is carried out to the lead material of selection.
Step 3：Lead material termination is placed into metal pad, the composition of two of which metal pad is respectively metal A
With metal B, wherein metal A is copper, and metal B is aluminium.
Step 4：Respectively metal is formed in metal A and metal B bond pad surfaces using the mode of acid copper and electric deposition aluminum
Articulamentum, prepares wire bonding pad.
Step 5：The connection layer height of acid copper and electric deposition aluminum is below the half of lead height in solder joint.
As shown in Figure 6.
Step 6：Device surface is cleaned, processing is dried, wire bonding pad structure is completed and prepares.
Embodiment 6：
Step 1：Foil-like or ribbon lead material are selected, such as：Graphene, graphene surface enhancing metal lead wire, carbon nanometer
One kind in pipe composition metal lead or graphene composition metal lead is as lead material.
Step 2：Acetone ultrasonic cleaning 15 minutes is carried out to the lead material of selection.
Step 3：Lead material termination is placed into metal pad, the composition of two of which metal pad is respectively metal A
With metal B, wherein metal A is silver, and metal B is aluminium.
Step 4：Respectively metal is formed in metal A and metal B bond pad surfaces using the mode of Electrodeposited Silver and electric deposition aluminum
Articulamentum, prepares wire bonding pad.
Step 5：The connection layer height of Electrodeposited Silver and electric deposition aluminum is equal to the half of lead height in solder joint.Such as
Shown in Fig. 7.
Step 6：Device surface is cleaned, processing is dried, wire bonding pad structure is completed and prepares.
Embodiment 7：
Step 1：Foil-like or ribbon lead material are selected, such as：Graphene, graphene surface enhancing metal lead wire, carbon nanometer
One kind in pipe composition metal lead or graphene composition metal lead is as lead material.
Step 2：Acetone ultrasonic cleaning 10 minutes is carried out to the lead material of selection.
Step 3：Lead material termination is placed into metal pad, the composition of two of which metal pad is respectively metal A
With metal B, wherein metal A is copper, and metal B is copper.
Step 4：Metal connecting layer is formed in metal A and metal B bond pad surfaces using the mode of acid copper, preparation is drawn
Line bonding solder joint.
Step 5：Acid copper connection layer height is above the half of lead height in solder joint.As shown in Figure 8.
Step 6：Device surface is cleaned, processing is dried, wire bonding pad structure is completed and prepares.
Embodiment 8：
Step 1：Foil-like or ribbon lead material are selected, such as：Graphene, graphene surface enhancing metal lead wire, carbon nanometer
One kind in pipe composition metal lead or graphene composition metal lead is as lead material.
Step 2：Acetone ultrasonic cleaning 20 minutes is carried out to the lead material of selection.
Step 3：Lead material termination is placed into metal pad, the composition of two of which metal pad is respectively metal A
With metal B, wherein metal A is copper, and metal B is aluminium.
Step 4：Respectively metal is formed in metal A and metal B bond pad surfaces using the mode of acid copper and electric deposition aluminum
Articulamentum, prepares wire bonding pad.
Step 5：The connection layer height of acid copper and electric deposition aluminum is above lead height in solder joint, can cover completely
Lid lead material.As shown in Figure 9.
Step 6：Device surface is cleaned, processing is dried, wire bonding pad structure is completed and prepares.Complete local electricity
The structure of deposition of wire bonding chip is as shown in Figure 10.
Claims (10)
- A kind of 1. preparation method of the wire bonding pad structure based on local electro-deposition, it is characterised in that：The method is specific Step is as follows：Step 1：10 ~ 20min of ultrasonic cleaning is carried out respectively to lead material and bond pad surface using ethanol and acetone；Step 2：The termination of lead material is placed on to the center of bond pad surface；Step 3：According to pad metal species, matched metal electrodeposition solution is selected, in the connection of pad and lead Place's local carries out plating processing；Step 4：Regulating and controlling electro-deposition current density and electroplating time, the electro-deposition of control local is bonded the pattern of connector, it is expected that Bonding welding point structure.
- 2. a kind of preparation method of wire bonding pad structure based on local electro-deposition according to claim 1, it is special Sign is：The method further includes step 5：After the completion of electro-deposition, part is processed to electro-deposition, i.e. jointing carries out overall Cleaning, forms local electro-deposition wire bonding pad structure, dry and test.
- 3. a kind of preparation method of wire bonding pad structure based on local electro-deposition according to claim 1, it is special Sign is：In step 1, selected lead material is highly conductive nonmetallic materials or high-conductivity composite material, and described is highly conductive Nonmetallic materials are carbon nanotubes and its fiber or graphene and its lamellar structure；The high-conductivity composite material is received for carbon Mitron, graphene surface enhancing metal lead wire or graphene body phase composition metal lead.
- 4. a kind of preparation method of wire bonding pad structure based on local electro-deposition according to claim 1, it is special Sign is：In step 2, two kinds of pads for connection are same metal or not same metal, the metal is gold, silver, Copper, aluminium, nickel or aluminium alloy.
- 5. a kind of preparation method of wire bonding pad structure based on local electro-deposition according to claim 1, it is special Sign is：In step 3, when carrying out plating processing, electric depositing solution should coat the junction of lead ends and pad completely, electricity Deposition solution should be less than the 2/3 of whole pad in bond pad surface spreading area.
- 6. a kind of preparation method of wire bonding pad structure based on local electro-deposition according to claim 5, it is special Sign is：Electro-deposition processing is carried out in the junction of lead ends and pad using electroplating power supply, is formed and pad metal species The consistent coat of metal, realizes the connection of lead and metal pad, forms electro-deposition wire bonding connector.
- 7. a kind of preparation method of wire bonding pad structure based on local electro-deposition according to claim 1, it is special Sign is：In step 4, the current density is 0.5 ~ 5A/dm2, electroplating time is 10 ~ 600s.
- 8. a kind of preparation method of wire bonding pad structure based on local electro-deposition according to claim 1, it is special Sign is：In step 4, in welding spot structure the height of articulamentum metallic cover lead material be less than lead height two/ First, the half equal to lead height, the half higher than lead height but less than lead height itself and completely cladding Lead material.
- 9. a kind of preparation method of wire bonding pad structure based on local electro-deposition according to claim 2, it is special Sign is：The Integral cleaning is after being cleaned twice using deionized water, to be cleaned one time using ethanol.
- 10. a kind of preparation method of wire bonding pad structure based on local electro-deposition according to claim 2, it is special Sign is：Welding spot structure after cleaning is dried processing, drying temperature is 50-120 DEG C, drying time 20-300s.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447614A (en) * | 2019-08-30 | 2021-03-05 | 朋程科技股份有限公司 | Power device packaging structure |
| WO2022142864A1 (en) * | 2020-12-28 | 2022-07-07 | 颀中科技（苏州）有限公司 | Chip packaging structure and chip packaging method |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62152154A (en) * | 1985-12-26 | 1987-07-07 | Toshiba Corp | Bonding method on tape carrier system |
| JPH0236053U (en) * | 1988-09-02 | 1990-03-08 | ||
| EP0459493A2 (en) * | 1990-06-01 | 1991-12-04 | Kabushiki Kaisha Toshiba | A semiconductor device using a lead frame and its manufacturing method |
| JPH0479429U (en) * | 1990-11-21 | 1992-07-10 | ||
| US5139973A (en) * | 1990-12-17 | 1992-08-18 | Allegro Microsystems, Inc. | Method for making a semiconductor package with the distance between a lead frame die pad and heat spreader determined by the thickness of an intermediary insulating sheet |
| JPH0992771A (en) * | 1995-09-22 | 1997-04-04 | Hitachi Cable Ltd | Bonding piece, bonding block, lead frame for semiconductor device, and semiconductor device |
| US5863816A (en) * | 1996-12-28 | 1999-01-26 | Lg Semicon Co., Ltd. | Fabrication method for chip size semiconductor package |
| CN1326016A (en) * | 2000-04-27 | 2001-12-12 | 新光电气工业株式会社 | Local electroplating system |
| CN1554805A (en) * | 2003-12-23 | 2004-12-15 | 番禺得意精密电子工业有限公司 | Electroplating method and electroplating device special for such electroplating method |
| KR20090003053A (en) * | 2007-08-08 | 2009-01-09 | 아페리오(주) | Layout method of electroplating feed line and package board manufactured thereof |
| CN101550574A (en) * | 2009-05-22 | 2009-10-07 | 上海新阳半导体材料有限公司 | Selective plating device |
| CN102330125A (en) * | 2011-09-13 | 2012-01-25 | 南京航空航天大学 | Array electrode cavity for jet electrodeposition |
| CN102420204A (en) * | 2010-09-24 | 2012-04-18 | 飞思卡尔半导体公司 | Polymer core wire |
-
2017
- 2017-12-19 CN CN201711377901.2A patent/CN107946201B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62152154A (en) * | 1985-12-26 | 1987-07-07 | Toshiba Corp | Bonding method on tape carrier system |
| JPH0236053U (en) * | 1988-09-02 | 1990-03-08 | ||
| EP0459493A2 (en) * | 1990-06-01 | 1991-12-04 | Kabushiki Kaisha Toshiba | A semiconductor device using a lead frame and its manufacturing method |
| JPH0479429U (en) * | 1990-11-21 | 1992-07-10 | ||
| US5139973A (en) * | 1990-12-17 | 1992-08-18 | Allegro Microsystems, Inc. | Method for making a semiconductor package with the distance between a lead frame die pad and heat spreader determined by the thickness of an intermediary insulating sheet |
| JPH0992771A (en) * | 1995-09-22 | 1997-04-04 | Hitachi Cable Ltd | Bonding piece, bonding block, lead frame for semiconductor device, and semiconductor device |
| US5863816A (en) * | 1996-12-28 | 1999-01-26 | Lg Semicon Co., Ltd. | Fabrication method for chip size semiconductor package |
| CN1326016A (en) * | 2000-04-27 | 2001-12-12 | 新光电气工业株式会社 | Local electroplating system |
| CN1554805A (en) * | 2003-12-23 | 2004-12-15 | 番禺得意精密电子工业有限公司 | Electroplating method and electroplating device special for such electroplating method |
| KR20090003053A (en) * | 2007-08-08 | 2009-01-09 | 아페리오(주) | Layout method of electroplating feed line and package board manufactured thereof |
| CN101550574A (en) * | 2009-05-22 | 2009-10-07 | 上海新阳半导体材料有限公司 | Selective plating device |
| CN102420204A (en) * | 2010-09-24 | 2012-04-18 | 飞思卡尔半导体公司 | Polymer core wire |
| CN102330125A (en) * | 2011-09-13 | 2012-01-25 | 南京航空航天大学 | Array electrode cavity for jet electrodeposition |
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| CN112447614A (en) * | 2019-08-30 | 2021-03-05 | 朋程科技股份有限公司 | Power device packaging structure |
| WO2022142864A1 (en) * | 2020-12-28 | 2022-07-07 | 颀中科技（苏州）有限公司 | Chip packaging structure and chip packaging method |
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