CN107887452A - ZnO-based self-supported thin film preparation method - Google Patents

ZnO-based self-supported thin film preparation method Download PDF

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CN107887452A
CN107887452A CN201710933791.7A CN201710933791A CN107887452A CN 107887452 A CN107887452 A CN 107887452A CN 201710933791 A CN201710933791 A CN 201710933791A CN 107887452 A CN107887452 A CN 107887452A
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zno
substrate
laser
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sapphire
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叶建东
张彦芳
任芳芳
朱顺明
唐东明
杨燚
顾书林
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南京大学
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The invention discloses a ZnO-based self-supported thin film preparation method. The ZnO-based thin film is an epitaxial thin film which grows on a sapphire substrate by using an MOCVD method. A two-step growth method of a low-temperature buffer layer first and then high-temperature epitaxial growth is adopted, and mismatch between the sapphire substrate and a ZnO material is solved. The low-temperature buffer layer has a thickness of about 200 to 400 nm, and the high-temperature epitaxial layer has a thickness of about 2 to 5 mum. A laser lift-off method is adopted to separate the prepared ZnO-based epitaxial layer from the sapphire substrate. When laser lift-off is carried out on the epitaxial layer, a laser beam is adjusted to be focused on a sample, the sample is irradiated from one side of the sapphire, the sapphire is transparent towards the incident laser, and the ZnO absorbs the laser fiercely. The lift-off process for acquiring the ZnO-based self-supported thin film is simple,the cost is low, preparation is easy, the performance of a ZnO-based optoelectronic device is improved, and a flexible electronic device is made.

Description

一种ZnO基自支撑薄膜的制备方法 One kind of self-supporting film of a ZnO-based preparation

技术领域 FIELD

[0001] 本发明具体涉及一种ZnO基自支撑薄膜的制备方法,属于半导体光电器件技术领域。 [0001] The present invention particularly relates to a method of preparing self-supporting ZnO-based thin film photovoltaic devices are semiconductor technical field.

背景技术 Background technique

[0002] 伴随着III族氮化物半导体在光电子和微电子领域的广泛应用,与GaN具有相似的结构和更为优异的光电性能的ZnO材料,也得到了迅速的发展和广泛的关注,被认为是发展高性能光电子器件的优选材料。 ZnO material [0002] With the widespread application of Group III nitride semiconductor in the field of microelectronics and optoelectronics, and GaN having a similar structure and more excellent optical properties, has also been the rapid development and widespread concern, is that It is the preferred material for the development of high performance optoelectronic devices. 和III族氮化物相似,11族氧化物半导体ZnO为直接带隙半导体,具有较大的激子结合能,其合金材料带隙可调范围覆盖深紫外和可见光的光谱区域。 And similar Group III nitride, the oxide semiconductor ZnO Group 11 is a direct bandgap semiconductor, has a large exciton binding energy, the material bandgap alloys adjustable range covering the spectrum of visible light and DUV region. 与m- V族宽带隙半导体材料GaN相比,ZnO具有如下优点:ZnO材料制备工艺较简单,降低了材料成本;ZnO可被酸或碱腐蚀,易于制备微型器件;此外,ZnO对可见光无吸收,可用于制造透明薄膜晶体管。 M- V group compared to wide bandgap semiconductor material GaN, ZnO has the following advantages: simple manufacturing process ZnO material, reducing material costs; ZnO may be an acid or alkaline etching, easy to prepare micro devices; Furthermore, no absorption of visible light ZnO , it can be used for manufacturing a transparent thin film transistor. 因此,ZnO基材料在高效激子型短波长发光器件、低阈值高功率激光器、紫外探测器件、固态照明、透明显示和太阳能电池等领域具有广阔的应用前景。 Consequently, ZnO-based material in the exciton type high short-wavelength light emitting device, low threshold high-power lasers, UV detector, solid state lighting, transparent display and solar cells have broad application prospects.

[0003] 由于ZnO单晶衬底价格昂贵,一般采用存在晶格失配和热失配的异质衬底进行外延生长。 [0003] Since the ZnO single crystal substrate is expensive prices, foreign substrate lattice mismatch and thermal mismatch exists generally used for epitaxial growth. 蓝宝石材料具有热稳定好、机械强度高、化学稳定性好,制造技术相对成熟等优点, 且和Zn〇具有一定程度的晶格匹配,大多数ZnO基外延层使用蓝宝石作为衬底。 Sapphire material having a good thermal stability, high mechanical strength, chemical stability, etc. manufacturing technology is relatively mature, and Zn〇 and have a degree of lattice matching, most ZnO epitaxial layer using a sapphire substrate as a substrate. 但是蓝宝石的热导率较低,成为光电子器件散热的瓶颈,与此同时,蓝宝石的电导率很低,几乎为绝缘体,严重影响了器件的电学性能和寿命,ZnO与蓝宝石异质衬底之间的分离成为获得ZnO基单晶薄膜的重大挑战。 However, low thermal conductivity of sapphire, a bottleneck heat optoelectronic device, at the same time, the conductivity of sapphire is very low, almost as an insulator, seriously affecting the electrical properties and lifetime of the device, between ZnO and sapphire foreign substrate separation become a major challenge to obtain ZnO-based single-crystal thin films.

[0004] 目前ZnO与异质衬底分离常用的方法是机械研磨,另外还可以通过在衬底上做结构,使ZnO在生长结束后从异质衬底上自剥离,但是这些方法一般都比较复杂,而且会增加成本。 [0004] ZnO is currently separated from the substrate and hetero-mechanical polishing method is used, also can be done by a structure on a substrate, a ZnO substrate from peeling from the heterojunction at the end of the growth, but these methods are generally more complex, and will increase costs. 因此,需要进一步探索和开拓ZnO基外延材料与蓝宝石异质衬底之间的分离方法,获得高质量的ZnO基自支撑薄膜。 Thus, the separation between the method further explore and develop the ZnO-based epitaxial sapphire foreign substrate materials needed to obtain a high quality ZnO-based self-supporting film.

发明内容 SUMMARY

[0005]本发明目的是,提出一种采用激光剥离获得ZnO基自支撑薄膜的方法,剥离得到的自支撑薄膜可应用于ZnO基材料的同质生长,进行器件结构的制备,或者转移到高热导率和高电导率的支撑材料,可避免蓝宝石衬底电导率热导率低的缺陷,制备更好的器件性能。 [0005] The object of the present invention is to provide a method for laser stripping obtained ZnO-based film is self-supporting, self-supporting film obtained may be applied to release the ZnO-based material is grown, the device structure is prepared, or transferred to the heat the support material permeability and high electrical conductivity, the conductivity of the sapphire substrate can avoid the disadvantages of low thermal conductivity, device performance and better prepared. 也可将获得的自支撑薄膜转移至PET等柔性衬底上,制备柔性电子器件。 It may also be self-supporting film obtained was transferred to a flexible substrate such as PET to prepare a flexible electronic device. 本发明技术方案:一种ZnO基自支撑薄膜的制备方法,使用激光剥离的方法实现蓝宝石衬底的剥离,获得Zn〇基自支撑薄膜,并可通过金属熔融键合技术将自支撑薄膜转移到Cu、Si衬底或者其它高热导率和高电导率的支撑材料或PET等柔性衬底上。 Aspect of the present invention: preparation of one kind of self-supporting ZnO-based thin film, use of a laser to achieve the release of the sapphire substrate to obtain a self-supporting film Zn〇 group, and self-supporting technology by the molten metal bonding film was transferred to Cu, Si substrate, or other high thermal conductivity and high electrical conductivity of the support material, or the like on the PET flexible substrate.

[0006] _ZnO基薄膜是在蓝宝石衬底上使用M0CVD方法生长的外延层薄膜,采用先低温缓冲层然后高温外延生长相结合的两步生长法,解决蓝宝石衬底与Zn0材料之间的失配问题;低温缓冲层厚度约为200-400nm,高温外延层厚度约为2-5wn;然后采用激光剥离的方法将制备的ZnO基外延层与蓝宝石衬底的分离:激光剥离外延层时,调节激光光束聚焦于样品,使用特定波长的激光(如248nm的KrF准分子激光),从蓝宝石一侧照射样品,蓝宝石对该入射激光透明,而ZnO对该激光有强烈吸收。 [0006] _ZnO based film using epitaxial growth of a layer of the film M0CVD on a sapphire substrate, using the first-step low temperature buffer layer and growing a high temperature epitaxial growth method in combination, solve the mismatch between the sapphire substrate material and Zn0 problem; low temperature buffer layer a thickness of about 200-400nm, the high-temperature epitaxial layer thickness of about 2-5wn; and laser peeling method to separate the ZnO-based epitaxial layer and the sapphire substrate prepared: laser peeling the epitaxial layer, adjusting the laser focusing the beam on the sample, using a specific wavelength of the laser (e.g. KrF excimer laser of 248nm), the sample is irradiated from the sapphire side, the incident laser light transparent sapphire, and ZnO have strong absorption of the laser light.

[0007]使ZnO基外延层和异质蓝宝石衬底分离,入射激光能量密度,对于上述蓝宝石衬底上的ZnO外延层,激光能量密度需大于650mJ/Cm2,并可通过激光扫描方式获得大面积自支撑薄膜。 [0007] ZnO-base heterojunction epitaxial layer and separating the sapphire substrate, the laser energy density, for the ZnO epitaxial layer formed on the sapphire substrate, the laser energy density must be greater than 650mJ / Cm2, and can obtain a large area by laser scanning self-supporting film.

[OOOS]进一步的,通过金属熔融键合技术将自支撑外延层薄膜转移至新衬底。 [OOOS] Further, by the molten metal bonding technique to the self-supporting thin epitaxial layer transferred to a new substrate. 转移至的新衬底材料可以是Cu、Si衬底或者其它高热导率和高电导率的支撑材料或PET等柔性衬底。 The new material is transferred to the substrate and the like may be Cu, Si substrate, or other support material of high thermal conductivity and high electrical conductivity of the flexible substrate or PET. [0009]进一步的,本发明方法不仅可以剥离蓝宝石衬底上的ZnO外延层,也可剥离蓝宝石衬底上的ZnO基异质结,如ZnMgO/ZnO异质结等。 [0009] Further, the method of the present invention can not only release ZnO epitaxial layer on the sapphire substrate, ZnO substrate may be peeled off heterojunction on a sapphire substrate, such as ZnMgO / ZnO heterojunction like.

[0010]自支撑外延层薄膜转移至新衬底步骤为: [0010] The self-supporting thin epitaxial layer transferred to a new substrate, the steps of:

[0011] (1)将生长在蓝宝石衬底上的ZnO基外延层面向新衬底贴紧固定,平整的新衬底对即将分离的ZnO基薄膜起支撑作用; [0011] (1) grown on a sapphire substrate, a ZnO-based epitaxial level closely secured, the formation of a new substrate on a new substrate ZnO-based thin film offgoing play a supportive role;

[0012] (2)调节激光光束聚焦于样品,使用特定波长并且功率足够的激光自蓝宝石一面入射至样品,可通过激光扫描方式获得大面积自支撑薄膜; [0012] (2) adjust the laser focus the laser beam on the sample, using a specific wavelength and sufficient power is incident from the side to the sapphire sample, a large area can be self-supporting film obtained by laser scanning;

[0013] ⑶ZnO基外延层和蓝宝石异质衬底分离,获得ZnO基自支撑薄膜; [0013] ⑶ZnO yl hetero epitaxial layer and the sapphire substrate is separated, to obtain a ZnO-based self-supporting film;

[00M] (4)使用金属熔融键合技术将自支撑薄膜转移到Cu、Si衬底或者其他高热导率和高电导率的支撑材料或PET等柔性衬底。 [00M] (4) using a metal bonding technique molten self-supporting film is transferred to Cu, Si substrate or other high thermal conductivity and high electrical conductivity of the support material, or the like PET flexible substrate.

[0015]有益效果:本发明提出一种采用激光剥离获得ZnO基自支撑薄膜的方法,可获得结晶质量良好的ZnO自支撑薄膜,剥离得到的自支撑薄膜可应用于ZnO基材料的同质生长,进行器件结构的制备;或者转移到高热导率和高电导率的支撑材料,可避免蓝宝石衬底电导率热导率低的缺陷,制备更好的器件性能;也可将获得的自支撑薄膜转移至PET等柔性衬底上,制备柔性电子器件。 [0015] Advantageous Effects: The present invention provides a method of using a laser lift obtained ZnO-based film is self-supporting, self-supporting film of good quality of crystal of ZnO self-supporting film, peeling the resulting ZnO-based material may be applied to the growth of homogeneous , device structures were prepared; self-supporting film may be obtained; transferred to a support material or a high thermal conductivity and high electrical conductivity, the conductivity of the sapphire substrate can avoid the disadvantages of low thermal conductivity, device performance and better prepared transferred to a flexible substrate such as PET to prepare a flexible electronic device. 与目前常用的机械研磨和图形化衬底等方法相比,本发明提出的采用激光剥离获得ZnO基自支撑薄膜的方法工艺简单,成本低,更易于制备ZnO与异质衬底分离。 Compared with the current conventional mechanical grinding methods and the like and patterning the substrate, proposed by the present invention is obtained using laser lift-off method for a ZnO-based self-supporting film process is simple, low cost, more easily separated from the substrate of ZnO and heterogeneity.

附图说明 BRIEF DESCRIPTION

[0016]图1是采用激光剥离获得ZnO基自支撑薄膜并的示意图。 [0016] FIG. 1 is a schematic view of a laser and a ZnO-based self-supporting film peeling is obtained.

[0017]图2是蓝宝石衬底上的ZnO外延层剥离前后的形貌比较:a.剥离前的蓝宝石衬底上的ZnO外延层形貌;b •剥离得到的ZnO自支撑薄膜正面形貌;c •剥离得到的ZnO自支撑薄膜背面形貌。 [0017] FIG. 2 is a topography before and after the release of the ZnO epitaxial layer on a sapphire substrate: a ZnO epitaxial layer topography on the sapphire substrate before release; b • peeled self-supporting film obtained ZnO front morphology;. c • peeled self-supporting film obtained ZnO back surface morphology. 由图可知,剥离后ZnO薄膜表面平整,无龟裂,仍保持较好的晶体质量。 The figure shows that the ZnO thin film after peeling the surface smooth, crack-free, still maintain a good crystal quality.

具体实施方式 Detailed ways

[0018]本发明提出了一种ZnO基自支撑薄膜的制备方法,使用激光剥离的方法制备ZnO外延层和蓝宝石衬底1的剥离,获得ZnO基自支撑薄膜,并可通过金属熔融键合技术将自支撑薄膜转移到Cu、Si衬底或者其它高热导率和高电导率的支撑材料或PET等柔性衬底上。 [0018] The present invention provides a method of preparing self-supporting ZnO-based films using a laser lift-off release preparation ZnO epitaxial layer and the sapphire substrate 1, to obtain a ZnO-based self-supporting film, and through the molten metal bonding technique the self-supporting film is transferred to the Cu, Si substrate, or other high thermal conductivity and high electrical conductivity of the support material, or the like PET flexible substrate. ZnO 基薄膜是在蓝宝石衬底上使用M0CVD方法生长的外延层薄膜,采用激光剥离的方法制备ZnO 基外延层与蓝宝石衬底的分离。 ZnO-based thin film is an epitaxial layer grown M0CVD method on a sapphire substrate using laser lift-off method for separation of ZnO based epitaxial layer of the sapphire substrate. 激光剥离外延层时,调节激光光束聚焦于样品,使用特定波长的激光(如248nm的KrF准分子激光),从蓝宝石一侧照射样品,蓝宝石对该入射激光透明, 而ZnO对该激光有强烈吸收。 Laser peeling the epitaxial layer is adjusted to focus the laser beam to the sample, a laser (e.g. KrF excimer laser of 248nm) using a specific wavelength, is irradiated from the sapphire side of the sample, the incident laser light transparent sapphire, and ZnO absorbs strongly the laser . 要有足够大的入射激光能量密度,对于上述蓝宝石衬底上的ZnO外延层,激光能量密度需大于650mJ/cm2,并可通过激光扫描方式获得大面积自支撑薄膜。 Have sufficient laser energy density, for the ZnO epitaxial layer formed on the sapphire substrate, the laser energy density must be greater than 650mJ / cm2, to obtain a large area can be self-supporting film by laser scanning. 获得的ZnO基自支撑薄膜,可通过金属熔融键合技术将自支撑薄膜转移至新衬底。 ZnO-based self-supporting film obtained, techniques can be transferred to the new self-supporting film substrates bonded by the molten metal bond. 转移至的新衬底材料可以是Cu、Si衬底或者其它高热导率和高电导率的支撑材料或PET等柔性衬底。 The new material is transferred to the substrate and the like may be Cu, Si substrate, or other support material of high thermal conductivity and high electrical conductivity of the flexible substrate or PET. 此方法不仅可以剥离蓝宝石衬底上的ZnO外延层,也可剥离蓝宝石衬底上的ZnO基异质结,如ZnMgO/ZnO异质结等。 This method can not only release ZnO epitaxial layer on the sapphire substrate, ZnO substrate may be peeled off heterojunction on a sapphire substrate, such as ZnMgO / ZnO heterojunction like.

[0019]本发明方法的具体操作步骤如下:⑴将生长在蓝宝石衬底丨上的Zn〇基外延层面向新衬底贴紧固定,平整的新衬底对即将分离的ZnO基薄膜起支撑作用; [0019] The method of the present invention, specific steps are as follows: ⑴ grown on a sapphire substrate Shu Zn〇 group of closely secured to the new level of the epitaxial substrate, the formation of a new substrate for ZnO-based film offgoing play a supportive role ;

[0020] (2)调节激光光束聚焦于样品,使用特定波长并且功率足够的激光自蓝宝石一面入射至样品,可通过激光扫描方式获得大面积自支撑薄膜; [0020] (2) adjust the laser focus the laser beam on the sample, using a specific wavelength and sufficient power is incident from the side to the sapphire sample, a large area can be self-supporting film obtained by laser scanning;

[0021] ⑶ZnO基外延层3和蓝宝石异质衬底分离,获得ZnO基自支撑薄膜; [0021] ⑶ZnO yl hetero epitaxial layer 3 and the sapphire substrate is separated, to obtain a ZnO-based self-supporting film;

[0022] (4)使用金属熔融键合技术将自支撑薄膜转移到Cu、Si衬底或者其他高热导率和高电导率的支撑材料或PET等柔性衬底。 [0022] (4) using a metal bonding technique molten self-supporting film is transferred to Cu, Si substrate or other high thermal conductivity and high electrical conductivity of the support material, or the like PET flexible substrate.

[0023]下面通过具体工艺步骤进一步描述本发明: [0023] The present invention is further described by the following specific process steps:

[0024] (1)将生长在蓝宝石衬底上的ZnO基外延层面向新衬底贴紧固定,平整的新衬底对即将分离的ZnO基薄膜起支撑作用。 [0024] (1) grown on a sapphire substrate, a ZnO-based epitaxial level closely secured, the formation of a new substrate on a new substrate ZnO-based thin film offgoing play a supportive role. 其中,ZnO基薄膜是在蓝宝石衬底上使用M0CVD方法生长的外延层薄膜,采用低温缓冲层2和高温外延层结合的两步生长法,可有效解决蓝宝石衬底与ZnO材料之间的失配问题。 Wherein, ZnO-based thin film is an epitaxial thin film layer grown M0CVD method on a sapphire substrate, a low temperature buffer layer 2 and the two-step high-temperature epitaxial layer growth method in combination, can effectively solve the mismatch between ZnO and sapphire substrate material problem. 低温缓冲层的优化生长温度约为450〜48(TC,而高温外延层3 的生长温度窗口在850〜1000°C之间。生长压力保持为75〜150Torr,高温外延过程VI/II为2000〜4000。低温缓冲层厚度约为200-400nm,高温外延层厚度约为2-5wn; Optimization of the growth temperature of low-temperature buffer layer is about 450~48 (TC, while the high-temperature epitaxial growth temperature of the window layer 3. The growth pressure was maintained between 75~150Torr 850~1000 ° C, the high-temperature epitaxial process VI / II is 2000~ 4000. low temperature buffer layer a thickness of about 200-400nm, the high-temperature epitaxial layer thickness of about 2-5wn;

[0025] (2)调节激光光束4聚焦于样品,使用特定波长(如248nm的KrF准分子激光)并且功率足够(入射激光能量密度大于650mJ/cm2)的激光自蓝宝石一面入射至样品,可通过激光扫描方式获得大面积自支撑薄膜; Laser [0025] (2) adjusting the laser beam 4 is focused on the sample, using a specific wavelength (e.g., 248nm, KrF excimer laser) and the power is sufficient (the laser energy density greater than 650mJ / cm2) is incident from one side to the sapphire sample by laser scanning to obtain a large area of ​​self-supporting film;

[0026] ⑶ZnO低温缓冲层在激光照射下受热熔化,Zn〇基外延层和蓝宝石异质衬底分离, 获得ZnO基自支撑薄膜; [0026] ⑶ZnO low temperature buffer layer is heated to melt under the laser irradiation, the sapphire Zn〇 group hetero epitaxial layer and the substrate is separated to obtain a ZnO-based self-supporting film;

[0027] (4)使用金属熔融键合技术将自支撑薄膜转移到Cu、Si衬底或者其他高热导率和高电导率的支撑材料或PET等柔性衬底。 [0027] (4) using a metal bonding technique molten self-supporting film is transferred to Cu, Si substrate or other high thermal conductivity and high electrical conductivity of the support material, or the like PET flexible substrate.

[0028]应用于剥离蓝宝石衬底上的ZnO外延层或剥离蓝宝石衬底上包括ZnMgO/ZnO的ZnO 基异质结时,亦预先生长一层低温缓冲薄膜。 [0028] When applied to stripping include ZnO-based heterojunction ZnMgO / ZnO ZnO epitaxial layer on the sapphire substrate or a sapphire substrate, a low temperature buffer layer is also previously grown film.

[0029]以上内容是结合具体的实施方式对本发明所作的进一步详细说明。 [0029] The above is described in further detail with reference to specific embodiments of the present invention is made. 本发明并不局限于上述实施方式,如果这些改动和变形属于本发明的权利要求和等同技术范围之内,则本发明也意图包含这些改动和变形。 The present invention is not limited to the above embodiment, if these modifications and variations of the present invention is the claims and equivalents within the technical scope of, the present invention intends to include these modifications and variations.

Claims (5)

1. 一种ZnO基自支撑薄膜的制备方法,其特征是ZnO基薄膜是在蓝宝石衬底上使用M0CVD方法生长的外延层薄膜,采用先低温缓冲层然后现高温外延生长相结合的两步生长法,解决蓝宝石衬底与ZnO材料之间的失配;低温缓冲层厚度约为200-400nm,高温外延层厚度约为2-5um;然后采用激光剥离的方法将制备的ZnO基外延层与蓝宝石衬底的分离:激光剥离外延层时,调节激光光束聚焦于样品,从蓝宝石一侧照射样品,蓝宝石对该入射激光透明,而ZnO对该激光有强烈吸收。 A method of preparing self-supporting ZnO-based film, wherein the ZnO-based thin film is an epitaxial layer grown M0CVD method on a sapphire substrate, using the first low-temperature growth buffer layer and then the two-step high-temperature epitaxial growth is now combined method, to solve the mismatch between ZnO and sapphire substrate material; low temperature buffer layer a thickness of about 200-400nm, the high-temperature epitaxial layer thickness of about 2-5um; then using ZnO epitaxial layer and the sapphire substrate laser lift-off method will be prepared separation of the substrate: peeling the epitaxial layer when the laser is adjusted to focus the laser beam on the sample, the sample is irradiated from the sapphire side, the incident laser light transparent sapphire, and ZnO have strong absorption of the laser light.
2.根据权利要求1所述的ZnO基自支撑薄膜的制备方法,其特征是使用特定波长的激光(如248nm的KrF准分子激光),使ZnO基外延层和异质蓝宝石衬底分离,入射激光能量密度, 对于上述蓝宝石衬底上的ZnO外延层,激光能量密度需大于650mJ/cm2,通过激光扫描方式获得大面积自支撑薄膜。 . 1 according to the method of preparing self-supporting ZnO-based film, characterized in that the laser (e.g. KrF excimer laser of 248nm) using a specific wavelength, a ZnO substrate and a heterojunction epitaxial layer separating the sapphire substrate, as claimed in claim incident laser energy density, for the ZnO epitaxial layer formed on the sapphire substrate, the laser energy density must be greater than 650mJ / cm2, to obtain a large area of ​​the self-supporting film by laser scanning.
3. 根据权利要求1所述的ZnO基自支撑薄膜的制备方法,其特征是通过金属熔融键合技术将自支撑外延层薄膜转移至新衬底,转移至的新衬底材料是Cu、Si衬底或者其它高热导率和高电导率的支撑材料或PET等柔性衬底。 The ZnO-based method for preparing said self-supporting film 1, which is characterized by a molten metal bonding technique to the self-supporting film of the epitaxial layer was transferred to a new substrate, transferred to a new substrate material is claimed in claim Cu, Si substrate or other high thermal conductivity and high electrical conductivity of the support material, or the like PET flexible substrate.
4. 根据权利要求3所述的ZnO基自支撑薄膜的制备方法,其特征是自支撑外延层薄膜转移至新衬底步骤为: (1) 将生长在蓝宝石衬底上的ZnO基外延层面向新衬底贴紧固定,平整的新衬底对即将分离的ZnO基薄膜起支撑作用; (2) 调节激光光束聚焦于样品,使用特定波长并且功率足够的激光自蓝宝石一面入射至样品,可通过激光扫描方式获得大面积自支撑薄膜; (3) ZnO基外延层和蓝宝石异质衬底分离,获得zn〇基自支撑薄膜; (4) 使用金属熔融键合技术将自支撑薄膜转移到(^、^衬底或者其他高热导率和高电导率的支撑材料或PET等柔性衬底。 The ZnO-based. 3 of the preparation of a self-supporting film, wherein the epitaxial layer is transferred from the film to the supporting substrate, a new step for the claim: (1) grown on a sapphire substrate, a ZnO-based epitaxial layer facing new closely secured to the substrate, the substrate on the upcoming new flat ZnO-based thin film separated from the support; (2) adjusting the laser beam focused on the sample, using a specific wavelength and the power of the laser from the sapphire side sufficiently enters the sample, by laser scanning to obtain a large area of ​​self-supporting film; (3) ZnO epitaxial base layer and the sapphire substrate is separated heterogeneous, self-supporting film obtained zn〇 group; (4) a molten metal bonding technique proceeds to self-supporting film (^ ^ substrate or other high thermal conductivity and high electrical conductivity of the support material, or the like PET flexible substrate.
5.根据权利要求3所述的ZnO基自支撑薄膜的制备方法,其特征是应用于剥离蓝宝石衬底上的ZnO外延层或剥离蓝宝石衬底上包括ZnMg0/Zn0的Zn〇基异质结。 ZnO. 3 according to the method of preparing a self-supporting substrate film, characterized by comprising a hetero-junction Zn〇 ZnMg0 / Zn0 ZnO epitaxial layer on the sapphire substrate or applied to the sapphire substrate as claimed in claim.
CN201710933791.7A 2017-10-10 2017-10-10 ZnO-based self-supported thin film preparation method CN107887452A (en)

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CN1794419A (en) * 2005-11-04 2006-06-28 南京大学 Improved laser stripped method of preparing self-supporting gallium nitride substrate
CN101082124A (en) * 2007-05-08 2007-12-05 中国科学院上海光学精密机械研究所 Method for developing m-face or a-face ZnO film by metal organic chemical vapour deposition
US8865489B2 (en) * 2009-05-12 2014-10-21 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
CN106601881A (en) * 2017-02-21 2017-04-26 南京大学 ZnO conductive covariant substrate vertical structure type GaN UV LED

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Publication number Priority date Publication date Assignee Title
CN1674312A (en) * 2005-03-15 2005-09-28 金芃 Semiconductor chip or component (including high brightness LED) with vertical structure
CN1794419A (en) * 2005-11-04 2006-06-28 南京大学 Improved laser stripped method of preparing self-supporting gallium nitride substrate
CN101082124A (en) * 2007-05-08 2007-12-05 中国科学院上海光学精密机械研究所 Method for developing m-face or a-face ZnO film by metal organic chemical vapour deposition
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