CN107871651A - The cleaning method of metal silicide - Google Patents
The cleaning method of metal silicide Download PDFInfo
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- CN107871651A CN107871651A CN201610850611.4A CN201610850611A CN107871651A CN 107871651 A CN107871651 A CN 107871651A CN 201610850611 A CN201610850611 A CN 201610850611A CN 107871651 A CN107871651 A CN 107871651A
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- Prior art keywords
- metal silicide
- cleaning method
- hydrogen peroxide
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- solution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The cleaning method of the metal silicide of the present invention, includes successively：Acid pickling step：Metal silicide product is placed in oxidizing acidic solution and cleans the first scheduled duration；Caustic scrubbing step：Preparing includes the alkaline oxygenated solution of ammonium ion, oxidant and deionized water, and metal silicide product is placed in the alkaline oxygenated solution and cleans the second scheduled duration.The cleaning method of the present invention can efficiently remove the organic particle remained on semiconductor chip/substrate, the cleanliness factor of semiconductor chip/substrate surface be improved, so as to improve the yields of product.
Description
Technical field
The present invention relates to semiconductor chip to clean field, more particularly to semiconductor chip/substrate containing metal silicide
Cleaning method.
Background technology
In semiconductor chip manufacturing process, silicon and metal material such as nickel platinum alloy and it is widely used, therefore, gold
There is unreacted nickel platinum in the meeting belonged on the semiconductor chip or substrate of silicide, it is necessary to will not for the performance during improving
The metal material of reaction removes the making so as to interconnection mechanisms such as follow-up conductive plungers and the conduction region of reduction semiconductor.
The cleaning method of traditional metal silicide is to be cleaned first using alkaline oxygenated solution, then molten using acidic oxidation
Liquid carries out cleaning treatment to nickel remaining in Semiconductor substrate, platinum, titanium, cobalt and titanium nitride, to remove unreacted metal material
And nitride.
However, such a cleaning method using the order of pickling after first alkali cleaning has the following disadvantages：Oxidizing acidic solution
Matter is more sticky, and this be easily adhered impurity particle, miscellaneous particle residue during pickling on semiconductor substrate surface
In semiconductor substrate surface, easily cause short circuit or cause the leakage current of MOS transistor the device defects such as to rise, so as to shadow
Ring yields.
So need a kind of cleaning method of improved metal silicide badly, with overcome with the defects of.
The content of the invention
It is an object of the invention to provide a kind of cleaning method of metal silicide, its can efficiently remove semiconductor chip/
The organic particle remained on substrate, the cleanliness factor of semiconductor chip/substrate surface is improved, so as to improve the yields of product.
To achieve the above object, the cleaning method of metal silicide of the invention, comprises the following steps successively：
Acid pickling step：Metal silicide product is placed in oxidizing acidic solution and cleans the first scheduled duration；And
Caustic scrubbing step：Preparing includes the alkaline oxygenated solution of ammonium ion, oxidant and deionized water, by metal silicide
Product is placed in the alkaline oxygenated solution and cleans the second scheduled duration.
It is preferred that the oxidizing acidic solution in the acid pickling step includes sulfuric acid and hydrogen peroxide.
It is preferred that the volume ratio of the sulfuric acid and the hydrogen peroxide is 2:1~9:2.
It is preferred that the cleaning temperature in the acid pickling step is maintained at 160 degree~190 degree, first scheduled duration is
120 seconds~300 seconds.
It is preferred that the alkaline oxygenated solution includes ammoniacal liquor and hydrogen peroxide.
It is preferred that the volume ratio of the ammoniacal liquor and the hydrogen peroxide is 1:1~1:5.
It is preferred that the mass ratio of the ammoniacal liquor, hydrogen peroxide and deionized water in the alkaline oxygenated solution is 1:2:10.
It is preferred that the cleaning temperature in the caustic scrubbing step is maintained at 40 degree~70 degree.
It is preferred that second scheduled duration in the caustic scrubbing step is more than or equal to 250 seconds.
Compared with prior art, cleaning method of the invention uses the cleaning step of alkali cleaning after first pickling, due to second
The hydrogen peroxide in alkaline oxygenated solution in step has strong oxidizing property, the organic matter that can remain semiconductor substrate surface
Particle oxidation dissolution, and after certain reaction time, organic particle is fully oxidized, and is taken off from semiconductor substrate surface
Separate out., will be insoluble meanwhile with the metallic particles of residual complex reaction can occur for the ammonium ion in alkaline oxygenated solution
Solution changes into the metal complex of water-soluble solution in the metallic particles of the aqueous solution, so as to by metallic particles from Semiconductor substrate
Surface removes.Further, since the property of alkaline oxygenated solution is more thin, therefore, the impurity particle dissolved is not easy to glue again
It is attached on semiconductor substrate surface, after cleaning treatment, the impurity particle quantity of semiconductor substrate surface effectively reduces, surface
Cleanliness factor greatly improves.
Embodiment
The cleaning method of the metal silicide of the present invention is described further with reference to embodiment, but is not so limited
The present invention.The cleaning method of the metal silicide of the present invention uses the cleaning sequence of alkali cleaning after first pickling, can effectively remove and partly lead
The organic particle remained in body chip/substrate, the cleanliness factor of semiconductor chip/substrate surface is improved, so as to improve product
Yields.
In acid pickling step, using the oxidizing acidic solution by sulfuric acid and hydrogen peroxide preparation, cleaning temperature is maintained at
160 degree~190 degree, scavenging period is 120 seconds~300 seconds, and the scope of the wherein volume ratio of sulfuric acid and hydrogen peroxide is 2:1~9:
2；In basic step, alkaline oxygenated solution is prepared using by ammoniacal liquor and hydrogen peroxide, cleaning temperature is maintained at 40 degree~70
Degree, scavenging period are not less than 250 seconds, wherein the scope of the volume ratio of the ammoniacal liquor and hydrogen peroxide in alkaline oxygenated solution is 1:1
~1:5.Hydrogen peroxide in alkaline oxygenated solution has strong oxidizing property, the organic matter that can remain semiconductor substrate surface
Grain oxidation dissolution, and after certain reaction time, organic particle is fully oxidized, and is departed from from semiconductor substrate surface
Go out., will be insoluble meanwhile with the metallic particles of residual complex reaction can occur for the ammonium ion in alkaline oxygenated solution
Change into the metal complex of water-soluble solution in the metallic particles of the aqueous solution, so as to by metallic particles from Semiconductor substrate table
Face removes.Further, since the property of alkaline oxygenated solution is more thin, therefore, the impurity particle dissolved is not easy to adhere to again
Onto semiconductor substrate surface, after cleaning treatment, the impurity particle quantity of semiconductor substrate surface effectively reduces, and surface is clean
Cleanliness greatly improves.
Several preferred embodiments are described below.
One, is in acid pickling step, and using the oxidizing acidic solution by sulfuric acid and hydrogen peroxide preparation, cleaning temperature is kept
At 160 degree, scavenging period is 300 seconds, and wherein the volume ratio of sulfuric acid and hydrogen peroxide is 4:1；In basic step, using by ammonia
Water and hydrogen peroxide prepare alkaline oxygenated solution, and cleaning temperature is maintained at 70 degree, and scavenging period is 250 seconds, its neutral and alkali oxygen
The scope for changing the volume ratio of the ammoniacal liquor and hydrogen peroxide in solution is 1:1, the mass ratio of ammoniacal liquor, hydrogen peroxide and deionized water is
1:2:10。
Two, are in acid pickling step, and using the oxidizing acidic solution by sulfuric acid and hydrogen peroxide preparation, cleaning temperature is kept
In 180 degree, scavenging period is 150 seconds, and wherein the volume ratio of sulfuric acid and hydrogen peroxide is 3:2；In basic step, using by ammonia
Water and hydrogen peroxide prepare alkaline oxygenated solution, and cleaning temperature is maintained at 50 degree, and scavenging period is 350 seconds, its neutral and alkali oxygen
The scope for changing the volume ratio of the ammoniacal liquor and hydrogen peroxide in solution is 1:2, the mass ratio of ammoniacal liquor, hydrogen peroxide and deionized water is
1:2:10。
Three, are in acid pickling step, and using the oxidizing acidic solution by sulfuric acid and hydrogen peroxide preparation, cleaning temperature is kept
At 190 degree, scavenging period is 120 seconds, and wherein the volume ratio of sulfuric acid and hydrogen peroxide is 9:2；In basic step, using by ammonia
Water and hydrogen peroxide prepare alkaline oxygenated solution, and cleaning temperature is maintained at 40 degree, and scavenging period is 500 seconds, its neutral and alkali oxygen
The scope for changing the volume ratio of the ammoniacal liquor and hydrogen peroxide in solution is 1:5, the mass ratio of ammoniacal liquor, hydrogen peroxide and deionized water is
1:2:10。
In summary, can be with because the hydrogen peroxide in alkaline oxygenated solution in the second step has strong oxidizing property
The organic particle oxidation dissolution that semiconductor substrate surface is remained, and after certain reaction time, organic particle quilt
Complete oxidation, and depart from away from semiconductor substrate surface.Meanwhile the ammonium ion in alkaline oxygenated solution can be with residual
Complex reaction occurs for metallic particles, and the metallic particles for being insoluble in the aqueous solution is changed into the metal complex of water-soluble solution
Thing, so as to which metallic particles be removed from semiconductor substrate surface.Further, since the property of alkaline oxygenated solution is more thin, because
This, the impurity particle dissolved is not easy to be re-adhered on semiconductor substrate surface, after cleaning treatment, Semiconductor substrate table
The impurity particle quantity in face effectively reduces, and surface cleanliness greatly improves.
The above disclosed right for being only presently preferred embodiments of the present invention, the present invention can not being limited with this certainly
Scope, therefore the equivalent variations made according to scope of the present invention patent, still belong to the scope that the present invention is covered.
Claims (9)
1. a kind of cleaning method of metal silicide, comprises the following steps successively：
Acid pickling step：Metal silicide product is placed in oxidizing acidic solution and cleans the first scheduled duration；And
Caustic scrubbing step：Preparing includes the alkaline oxygenated solution of ammonium ion, oxidant and deionized water, by metal silicide product
It is placed in the alkaline oxygenated solution and cleans the second scheduled duration.
2. the cleaning method of metal silicide as claimed in claim 1, it is characterised in that：Acid oxygen in the acid pickling step
Changing solution includes sulfuric acid and hydrogen peroxide.
3. the cleaning method of metal silicide as claimed in claim 2, it is characterised in that：The sulfuric acid and the hydrogen peroxide
Volume ratio be 2:1~9:2.
4. the cleaning method of metal silicide as claimed in claim 1, it is characterised in that：Cleaning temperature in the acid pickling step
Degree is maintained at 160 degree~190 degree, and first scheduled duration is 120 seconds~300 seconds.
5. the cleaning method of metal silicide as claimed in claim 1, it is characterised in that：The alkaline oxygenated solution includes ammonia
Water and hydrogen peroxide.
6. the cleaning method of metal silicide as claimed in claim 5, it is characterised in that：The ammoniacal liquor and the hydrogen peroxide
Volume ratio be 1:1~1:5.
7. the cleaning method of metal silicide as claimed in claim 5, it is characterised in that：Ammonia in the alkaline oxygenated solution
The mass ratio of water, hydrogen peroxide and deionized water is 1:2:10.
8. the cleaning method of metal silicide as claimed in claim 1, it is characterised in that：Cleaning temperature in the caustic scrubbing step
Degree is maintained at 40 degree~70 degree.
9. the cleaning method of metal silicide as claimed in claim 1, it is characterised in that：Described in the caustic scrubbing step
Two scheduled durations are more than or equal to 250 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610850611.4A CN107871651A (en) | 2016-09-26 | 2016-09-26 | The cleaning method of metal silicide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610850611.4A CN107871651A (en) | 2016-09-26 | 2016-09-26 | The cleaning method of metal silicide |
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| Publication Number | Publication Date |
|---|---|
| CN107871651A true CN107871651A (en) | 2018-04-03 |
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ID=61751353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610850611.4A Pending CN107871651A (en) | 2016-09-26 | 2016-09-26 | The cleaning method of metal silicide |
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| CN (1) | CN107871651A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113382554A (en) * | 2021-06-04 | 2021-09-10 | 广东工业大学 | Cleaning method of laser forming metal circuit |
Citations (7)
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|---|---|---|---|---|
| CN1390676A (en) * | 2002-07-19 | 2003-01-15 | 上海华虹（集团）有限公司 | Method for removing excessive metal in preapring silicide |
| CN1603470A (en) * | 2004-11-04 | 2005-04-06 | 上海华虹（集团）有限公司 | Metal front contact hole cleaning process |
| CN1873928A (en) * | 2005-06-01 | 2006-12-06 | 上海华虹Nec电子有限公司 | Method for preparing films of cobalt silicate |
| CN101724847A (en) * | 2008-10-21 | 2010-06-09 | 中芯国际集成电路制造(北京)有限公司 | Method for cleaning metal residue |
| CN101884092A (en) * | 2007-12-04 | 2010-11-10 | 三菱化学株式会社 | Method and solution for cleaning semiconductor device substrate |
| CN102290325A (en) * | 2010-06-21 | 2011-12-21 | 无锡华润上华半导体有限公司 | Method for cleaning metallic silicides |
| CN103426972A (en) * | 2013-08-28 | 2013-12-04 | 中电投西安太阳能电力有限公司 | Cleaning method for texture surface making of silicon chip |
-
2016
- 2016-09-26 CN CN201610850611.4A patent/CN107871651A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1390676A (en) * | 2002-07-19 | 2003-01-15 | 上海华虹（集团）有限公司 | Method for removing excessive metal in preapring silicide |
| CN1603470A (en) * | 2004-11-04 | 2005-04-06 | 上海华虹（集团）有限公司 | Metal front contact hole cleaning process |
| CN1873928A (en) * | 2005-06-01 | 2006-12-06 | 上海华虹Nec电子有限公司 | Method for preparing films of cobalt silicate |
| CN101884092A (en) * | 2007-12-04 | 2010-11-10 | 三菱化学株式会社 | Method and solution for cleaning semiconductor device substrate |
| CN101724847A (en) * | 2008-10-21 | 2010-06-09 | 中芯国际集成电路制造(北京)有限公司 | Method for cleaning metal residue |
| CN102290325A (en) * | 2010-06-21 | 2011-12-21 | 无锡华润上华半导体有限公司 | Method for cleaning metallic silicides |
| CN103426972A (en) * | 2013-08-28 | 2013-12-04 | 中电投西安太阳能电力有限公司 | Cleaning method for texture surface making of silicon chip |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113382554A (en) * | 2021-06-04 | 2021-09-10 | 广东工业大学 | Cleaning method of laser forming metal circuit |
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Application publication date: 20180403 |