CN107864525A - The heater and method of a kind of GIS device - Google Patents
The heater and method of a kind of GIS device Download PDFInfo
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- CN107864525A CN107864525A CN201711191000.4A CN201711191000A CN107864525A CN 107864525 A CN107864525 A CN 107864525A CN 201711191000 A CN201711191000 A CN 201711191000A CN 107864525 A CN107864525 A CN 107864525A
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 147
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 238000004804 winding Methods 0.000 claims abstract description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- 229920000742 Cotton Polymers 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 210000002469 basement membrane Anatomy 0.000 claims description 3
- 239000011889 copper foil Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 33
- 239000004020 conductor Substances 0.000 description 6
- 230000006698 induction Effects 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 206010044565 Tremor Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/06—Control, e.g. of temperature, of power
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Induction Heating (AREA)
Abstract
The present invention discloses the heater and method of a kind of GIS device.The heater is cylinder-like structure, and winding is fitted on GIS device shell, and heater includes:Semiconductor heating film, load coil, environment temperature sensor, gas pressure and temperature sensor, computer heating control power supply, control circuit;Semiconductor heating film is set up in parallel with load coil horizontal direction, and distance interval is provided between semiconductor heating film and load coil;The output end of the output end of environment temperature sensor, gas pressure and temperature sensor is connected by control circuit with the input of computer heating control power supply;The output end of computer heating control power supply is connected respectively by control circuit with the input of semiconductor heating film, the input of load coil.The heater and method of the present invention, is combined with load coil using semiconductor heating film, substantially increases the efficiency of heating surface to GIS device.
Description
Technical field
GIS fields of the present invention, more particularly to the heater and method of a kind of GIS device.
Background technology
GIS (Gas Insulated Switchgear) is the English abbreviation of gas-insulating and fully-enclosed stacked switch.GIS by
Breaker, disconnecting switch, earthed switch, transformer, arrester, bus, connector and outlet terminal etc. form, these equipment or
Part is all enclosed in the shell of metallic ground, SF6 insulating gas filled with certain pressure inside it, therefore also referred to as SF6 is complete
Switchgear.
Because SF6 gases have excellent insulating properties and break performance, and it is widely used in equipment for power transmission and distribution field.
At present, GIS has occupied absolute predominance and has also had the trend for further expanding its application.When GIS is used for severe cold
Qu Shi, such as in Xinjiang, the Inner Mongol and the Northeast, winter temperature is relatively low, and outdoor ambient temperature can drop to less than -40 DEG C, part
Even up to -50 DEG C of area, SF6 gases can produce partial liquefaction at these temperatures, cause under SF6 gas pressures and density
Drop, when locking pressure value is arrived in the reduction of SF6 gas pressures, by the trip(ping) circuit of locking breaker, if at this moment line failure,
After protection starts, and breaker is unable to action message, it will causes fault spread, causes protection to bypass the immediate leadership action, or equipment
The generation of damage accident.
Then, it is to be wrapped up GIS device with Heat preservation cover to run department's common practice, traditional GIS equipment
Heat preservation cover typically uses Electric heating, such as crawler type electric heater, has nichrome resistance wire or stainless steel inside it
Electric hot plate, winding are close in GIS device, carry out conduction heating.Or the electric heating tube in drier in mouth that pulls out opened up on GIS tank bodies fills
Put, not only firing rate is slow for this mode of heating, and material is heated not enough uniformly, and the thermal efficiency is relatively low, the drawbacks of certain be present.
The content of the invention
It is an object of the invention to provide a kind of heater of GIS device and method, is imitated with the heating improved to GIS device
Rate.
To achieve the above object, the invention provides following scheme:
A kind of heater of GIS device, the heater are cylinder-like structure, and winding is fitted in GIS device shell
On, the heater includes:Semiconductor heating film, load coil, environment temperature sensor, gas pressure and temperature pass
Sensor, computer heating control power supply, control circuit;
The semiconductor heating film is set up in parallel with the load coil horizontal direction, the semiconductor heating film with
Distance interval is provided between the load coil;
The output end of the output end of the environment temperature sensor, the gas pressure and temperature sensor passes through institute respectively
The input that control circuit is stated with the computer heating control power supply is connected;
The output end of the computer heating control power supply passes through the input of the control circuit and the semiconductor heating film, institute
The input for stating load coil connects respectively;The computer heating control power supply is used to control described half by the control circuit
The break-make of conductor heating film, it is additionally operable to control the power frequency of the load coil by the control circuit.
Optionally, the heater also includes:Adiabatic cotton, the adiabatic cotton are coated on the semiconductor heating film appearance
Face.
Optionally, the heater also includes:Partiting thermal insulation blanket, the partiting thermal insulation blanket are arranged at the GIS device
Between shell and the load coil.
Optionally, the heating power of the semiconductor heating film is 3500W.
Optionally, the semiconductor heating film specifically includes:Carbon heating area, copper foil current-carrying bar and basement membrane.
Optionally, when the GIS device shell is stainless steel, the power frequency of the load coil is
200kHz~250kHz;When the GIS device shell is aluminum alloy material, the power frequency of the load coil is
40kHz~70kHz.
The present invention also provides a kind of heating means of GIS device, and the heating means of the GIS device are applied to described
The heater of GIS device, the heating means include:
Obtain the temperature value of GIS device external environment;
Judge whether the temperature value is less than the first set temperature value, obtain the first judged result;
When first judged result represents that the temperature value is less than the first set temperature value, semiconductor heating film is opened
Heating process;
Obtain the gas pressure value of the GIS device;
Judge whether the gas pressure value is less than the first setup pressure value, obtain the second judged result;
When second judged result represents that the gas pressure value is less than the first setup pressure value, sensing heating is opened
Coil heats process;
When second judged result represents that the gas pressure value is not less than the first setup pressure value, stop sensing and add
Heat coil heating process;
Judge whether the temperature value is more than the second set temperature value, obtain the 3rd judged result;The second setting temperature
Angle value is more than first set temperature value;
When the 3rd judged result represents that the temperature value is more than the second set temperature value, stop semiconductor heating film
Heating process.
Optionally, after the gas pressure value for obtaining the GIS device, in addition to:
The gas temperature angle value of the GIS device is monitored in real time.
According to specific embodiment provided by the invention, the invention discloses following technique effect:
Due to there is semiconductor heating film planar to heat, be heated evenly, electric conversion efficiency height, the flames of anger, it is green safe,
The advantages that service life is long, semiconductor heating film to be used for the continuous heating of GIS device shell;Further, since sensing heating has
There is the advantages of heating power is higher, load coil is subjected to auxiliary heating for GIS device under the conditions of extremely low temperature, favorably
The normal operation of GIS device under the conditions of Yu Jihan, therefore, semiconductor heating film is combined with load coil, is substantially increased
To the efficiency of heating surface of GIS device.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing needed to use is briefly described, it should be apparent that, drawings in the following description are only some implementations of the present invention
Example, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is the structural representation of the heater of GIS device of the present invention;
Fig. 2 is the sectional view of the heater of GIS device of the present invention;
Fig. 3 is the schematic flow sheet of the heating means of GIS device of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is further detailed explanation.
Fig. 1 is the structural representation of the heater of GIS device of the present invention.The heater is cylinder-like structure, is twined
Around being fitted on GIS device shell 7, Fig. 1 is heater expansion tiling figure, as shown in figure 1, the heater bag
Include:Semiconductor heating film 1, load coil 2, environment temperature sensor 3, gas pressure and temperature sensor 4, computer heating control
Power supply 5, control circuit 6.
The semiconductor heating film 1 is set with the horizontal direction side-by-side parallel of load coil 2, and the semiconductor adds
Distance interval is provided between hotting mask 1 and the load coil 2, prevents load coil 2 to semiconductor heating film 1
Interference.
Output end, the output end of the gas pressure and temperature sensor 4 of the environment temperature sensor 3 pass through institute
The input that control circuit 6 is stated with the computer heating control power supply 5 is connected;The gas pressure of GIS device and temperature sensor 4 are general
It is installed on the side of disc insulator 8.
The input that the output end of the computer heating control power supply 5 passes through the control circuit 6 and the semiconductor heating film 1
End, the input of the load coil 2 connect respectively;The computer heating control power supply 5 is used to control by the control circuit 6
The break-make of the semiconductor heating film 1 is made, is additionally operable to control the electric current of the load coil 2 by the control circuit 6
Frequency.
In addition, heater is also devised with partiting thermal insulation blanket and adiabatic cotton, have between load coil 2 and GIS device
Partiting thermal insulation blanket, play a part of being incubated and insulating load coil 2 and GIS device, one layer of the outside of semiconductor heating film 1 is
Adiabatic cotton, there is preferable heat insulation effect.
The heater of the present invention can realize semiconductor heating and two heating processes of sensing heating, semiconductor heating master
To be completed by semiconductor heating film 1, semiconductor heating film 1 is mainly made up of carbon heating area, copper foil current-carrying bar and basement membrane etc.,
Its heating principle be mainly semiconductor heating film in the presence of electric field, the carbon molecules in carbon heating area group produces that " Blang transports
It is dynamic ", violent friction and shock occurs between carbon molecules, and then produce substantial amounts of heat;Sensing heating is mainly by sensing heating
Coil 2 is completed, and its principle is the magnetic field that high frequency alternating current added on load coil 2 produces high-frequency alternating, is recycled
Alternating magnetic field come produce vortex and then heating effect.
The housing diameter of GIS device is generally below 80cm, and thickness is less than 30mm.The width of semiconductor heating film 1 can be set
50cm is calculated as, likewise, the width of load coil 2 can be designed as 50cm, semiconductor heating film 1 and load coil
10cm interval can be left between 2.
The heating power of semiconductor heating film 1 can be 3500W, be to the semiconductor heating film that heating power is 3500W
It is no meet it is extremely cold under the conditions of GIS device heating verified.
GIS device shell is generally stainless steel or aluminum alloy materials, and the specific heat capacity of stainless steel is 0.46 × 103J/ (kg.
DEG C), the specific heat capacity of aluminium alloy is 0.96 × 103J/ (kg. DEG C).GIS device housing diameter is generally below 80cm, and thickness is less than
30mm, semiconductor heat the institute a width of 50cm of coverage rate, then the covered GIS of semiconductor heating volume is generally 470cm3, no
The density of rust steel is 7.93g/cm3, and the density of aluminium alloy is 2.702g/cm3, can then be obtained corresponding to semiconductor heating
GIS device outer cover quality, it is 3.7kg if GIS device is stainless steel casing, if it is 1.2kg that GIS device, which is aluminum alloy casing,.
Shown in specific heat capacity calculation formula such as formula (1).
C is specific heat capacity in formula, J/ (kg. DEG C);P is power, unit W;M is quality, units/kg;Δ T is temperature difference, unit
℃;T is the heat time.
The heating power of semiconductor heating film 1 is 3500W, if the initial temperature of GIS device shell is -30 DEG C, during heating
Between be 30 timesharing, then can be obtained according to specific heat capacity calculation formula such as formula (1), if GIS device is stainless steel material shell, can heated
To 32 DEG C;If GIS device is aluminum alloy materials shell, 62 DEG C can be heated to, meets the heating requirements of GIS shells.
2 galvanizations of load coil are alternating current, and due to being influenceed by electric current autonomous induction electric field, electric current exists
Distribution on cross-sectional area of conductor can be affected.Alternating current can produce stronger reverse induction electric field in the conductor on heart line, from
And the current density of conductive surface is caused to be much larger than conductor center.For cylindrical conductor, current density is by conductor
Appearance is successively decreased towards centerline with power exponent rule, and the phenomenon that this current convergence is distributed in conductive surface is referred to as the collection of electric current
Skin effect.Shown in calculation formula such as formula (2).
Ix=I0e-x/δ (2)
Wherein, I0For the current density of cylindrical conductor outer surface;IxFor away from the current density at GIS device shell x, A/
m2。
And the current density that the faradic depth of penetration is defined as on depth δ is workpiece surface current density I0's
36.8%.
It is theoretical according to electromagnetic induction heating, it can derive that depth of current penetration δ is determined by formula (3):
In formula, ρ is the resistivity of GIS shells, and unit is Ω .mm2;μ is the relative permeability of GIS shells;F is outer power-up
The frequency of stream, unit Hz.
GIS sheathing materials are mainly made up of stainless steel or aluminum alloy materials, and the electricalresistivityρ of wherein stainless steel is generally 7 ×
10-3~13 × 10-3, relative permeability μ are generally 7000~10000;And the electricalresistivityρ of aluminium alloy is generally 0.283 × 10-
3, relative permeability is relatively small, and generally 1.000022.
Because the heating power of sensing heating is higher, and its basic mechanical strength can not be influenceed on the heating of GIS shells, so
The depth of penetration of induction heating current should be less than its case depth, because GIS outer casing thickness minimum value is 10mm, hardened layer
Generally the 1/5~1/3 of part thickness.The i.e. faradic depth of penetration should be 1~2mm, so, it can be calculated according to formula (2)
Go out, for power frequency added on the GIS device shell load coil of stainless steel should be chosen to be 200k~250kHz it
Between;And it should be chosen to be for power frequency added on the GIS load coils of aluminum alloy casing between 40k~70kHz.
When heater assembles, the housing diameter for the GIS device to be heated is measured first, and selection interception semiconductor adds
Hotting mask and load coil, heat-conducting silicone grease is then applied on the shell of GIS device, be afterwards close to semiconductor heating film
On the shell of GIS device, then add one layer of adiabatic cotton again.Level is separated by 10cm (designing according to the actual requirements) by partiting thermal insulation blanket
Also it is wrapped on the shell of GIS device, does not then connect with load coil plus load coil, semiconductor heating film
Connect, the gas pressure of semiconductor heating film and GIS device is adjacent with temperature sensor, GIS device gas pressure and TEMP
Device is generally mounted to beside disc insulator.GIS device gas pressure and temperature sensor, environment temperature sensor, semiconductor
Heating film is connected with computer heating control power supply respectively with load coil.Environment temperature sensor and GIS device gas pressure with
Temperature sensor gathers ambient temperature and GIS device gas pressure and temperature, and analog signalses are passed into computer heating control electricity
The control circuit in source, control circuit connection semiconductor heating film Switching Power Supply and induction heating power, control its break-make and defeated
The power frequency gone out.
Fig. 2 is the sectional view of the heater of GIS device of the present invention;Using the width of semiconductor heating film 1 as 50cm in figure,
The width of load coil 2 is 50cm, between semiconductor heating film 1 and load coil 2 at intervals of 10cm exemplified by, specifically
During implementation, semiconductor heating film 1, load coil 2 and interval are all to set according to the actual requirements.
Fig. 3 is the schematic flow sheet of the heating means of GIS device of the present invention.As shown in figure 3, the heating means include:
Step 301:Obtain the temperature value of the external environment of GIS device.
Step 302:Judge whether temperature value is less than the first set temperature value.If it is, performing step 303, otherwise, return
Step 301.
Step 303:Open the heating process of semiconductor heating film.When ambient temperature drops to X DEG C (typically by GIS
Equipment manufacturer adjusts) when, semiconductor heating film puts into the heating to GIS device cavity;Use GIS device gas pressure
The break-make of the power supply of semiconductor heating film is controlled with temperature sensor.
Step 304:Obtain the gas pressure value of GIS device.
Meanwhile the gas temperature angle value of the GIS device is monitored in real time, so that the gas temperature in GIS device is consistently higher than
Temperature required for SF6 gas liquefactions, so as to solve the problems, such as severe cold area SF6 low-temperature gas liquefactions well.
Step 305:Judge whether gas pressure value is less than the first setup pressure value.If it is, perform step 306;Otherwise,
Perform step 307.
Step 306:Open load coil heating process.If ambient temperature continuous decrease, causes in GIS device
SF6 gas partial liquefactions, and then cause the reduction of GIS device gas pressure, arrive certain value (one when GIS device gas pressure reduces
As adjusted by GIS device manufacturer) when, load coil input, in combination with the heating of semiconductor heating film, and then right
GIS device carries out integrating heating.
Step 307:Stop load coil heating process.When gas pressure returns to normal value in GIS device, then move back
Go out the heating process of load coil, but keep the heating of semiconductor heating film not exit.
Step 308:Judge whether temperature value is more than the second set temperature value.If it is, perform step 309;Otherwise, return
Step 306.
Step 309:Stop semiconductor heating film heating process.If ambient temperature rises to Y DEG C and (typically set by GIS
Standby manufacturer adjusts) when, semiconductor heating is exited.
In heater disclosed by the invention, GIS device heater is cylinder-like structure, semiconductor heating film and sensing
Heating coil is arranged in parallel, middle spaced, prevents interference of the load coil to semiconductor heating film.Semiconductor heats
Film has planar heating, is heated evenly;Electric conversion efficiency is high;The flames of anger, it is green safe;The advantages that service life is long, it can use
In the continuous heating of GIS device shell;In addition, the heating power of sensing heating is higher, available for GIS device in pole cryogenic conditions
Under carry out auxiliary heating, be advantageous to the normal operation of GIS device under the conditions of extremely trembling with fear.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.For system disclosed in embodiment
For, because it is corresponded to the method disclosed in Example, so description is fairly simple, related part is said referring to method part
It is bright.
Specific case used herein is set forth to the principle and embodiment of the present invention, and above example is said
It is bright to be only intended to help the method and its core concept for understanding the present invention;Meanwhile for those of ordinary skill in the art, foundation
The thought of the present invention, in specific embodiments and applications there will be changes.In summary, this specification content is not
It is interpreted as limitation of the present invention.
Claims (8)
1. a kind of heater of GIS device, it is characterised in that the heater is cylinder-like structure, and winding is fitted in GIS
On device housings, the heater includes:Semiconductor heating film, load coil, environment temperature sensor, gas pressure
With temperature sensor, computer heating control power supply, control circuit;
The semiconductor heating film is set up in parallel with the load coil horizontal direction, the semiconductor heating film with it is described
Distance interval is provided between load coil;
The output end of the output end of the environment temperature sensor, the gas pressure and temperature sensor passes through the control respectively
Circuit processed is connected with the input of the computer heating control power supply;
The output end of the computer heating control power supply passes through the input of the control circuit and the semiconductor heating film, the sense
The input of heating coil is answered to connect respectively;The computer heating control power supply is used to control the semiconductor by the control circuit
The break-make of heating film, it is additionally operable to control the power frequency of the load coil by the control circuit.
2. heater according to claim 1, it is characterised in that the heater also includes:Adiabatic cotton, it is described exhausted
Hot cotton is coated on the semiconductor heating film outer surface.
3. heater according to claim 1, it is characterised in that the heater also includes:Partiting thermal insulation blanket, institute
Partiting thermal insulation blanket is stated to be arranged between the GIS device shell and the load coil.
4. heater according to claim 1, it is characterised in that the heating power of the semiconductor heating film is
3500W。
5. heater according to claim 1, it is characterised in that the semiconductor heating film specifically includes:Carbon is sent out
Hot-zone, copper foil current-carrying bar and basement membrane.
6. heater according to claim 1, it is characterised in that when the GIS device shell is stainless steel,
The power frequency of the load coil is 200kHz~250kHz;When the GIS device shell is aluminum alloy material, institute
The power frequency for stating load coil is 40kHz~70kHz.
7. a kind of heating means of GIS device, it is characterised in that the heating means of the GIS device are applied to claim 1-7
The heater of GIS device described in any one, the heating means include:
Obtain the temperature value of GIS device external environment;
Judge whether the temperature value is less than the first set temperature value, obtain the first judged result;
When first judged result represents that the temperature value is less than the first set temperature value, the heating of semiconductor heating film is opened
Process;
Obtain the gas pressure value of the GIS device;
Judge whether the gas pressure value is less than the first setup pressure value, obtain the second judged result;
When second judged result represents that the gas pressure value is less than the first setup pressure value, load coil is opened
Heating process;
When second judged result represents that the gas pressure value is not less than the first setup pressure value, stop sensing heating line
Enclose heating process;
Judge whether the temperature value is more than the second set temperature value, obtain the 3rd judged result;Second set temperature value
More than first set temperature value;
When the 3rd judged result represents that the temperature value is more than the second set temperature value, stop the heating of semiconductor heating film
Process.
8. heating means according to claim 7, it is characterised in that the gas pressure value for obtaining the GIS device
Afterwards, in addition to:
The gas temperature angle value of the GIS device is monitored in real time.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111753392A (en) * | 2020-05-18 | 2020-10-09 | 缤谷电力科技(上海)有限公司 | GIS vibration characteristic test system and method containing local hot spots |
CN118426519A (en) * | 2024-04-26 | 2024-08-02 | 苏州贝茵科技股份有限公司 | Control method, equipment and system of double heating systems and incubator |
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CN102519904A (en) * | 2011-12-13 | 2012-06-27 | 重庆大学 | Automatic constant temperature type photoacoustic detection device for SF6 decomposed components and experiment method thereof |
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CN204773507U (en) * | 2015-07-20 | 2015-11-18 | 河南亚都实业有限公司 | Heating device for medical tubular product extruding machine |
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CN205818376U (en) * | 2016-05-23 | 2016-12-21 | 广东宝贝儿婴童用品股份有限公司 | A kind of injection machine of Electromagnetic Heating |
CN106960760A (en) * | 2017-05-05 | 2017-07-18 | 郑州大学 | A kind of distal end assisted heating device of SF6 breakers |
CN107345710A (en) * | 2017-09-01 | 2017-11-14 | 郑州贝亚特电子科技有限公司 | A kind of high-efficiency electromagnetic heater |
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CN201409238Y (en) * | 2009-04-30 | 2010-02-17 | 桐乡市中维化纤有限公司 | Screw charging barrel heating device of silk-spinning machine |
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CN204773507U (en) * | 2015-07-20 | 2015-11-18 | 河南亚都实业有限公司 | Heating device for medical tubular product extruding machine |
CN205171662U (en) * | 2015-11-24 | 2016-04-20 | 徐旸婕 | Ecological environmental protection building |
CN205818376U (en) * | 2016-05-23 | 2016-12-21 | 广东宝贝儿婴童用品股份有限公司 | A kind of injection machine of Electromagnetic Heating |
CN106960760A (en) * | 2017-05-05 | 2017-07-18 | 郑州大学 | A kind of distal end assisted heating device of SF6 breakers |
CN107345710A (en) * | 2017-09-01 | 2017-11-14 | 郑州贝亚特电子科技有限公司 | A kind of high-efficiency electromagnetic heater |
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CN111753392A (en) * | 2020-05-18 | 2020-10-09 | 缤谷电力科技(上海)有限公司 | GIS vibration characteristic test system and method containing local hot spots |
CN118426519A (en) * | 2024-04-26 | 2024-08-02 | 苏州贝茵科技股份有限公司 | Control method, equipment and system of double heating systems and incubator |
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