CN107863393A - The preparation method of solar energy photovoltaic glass with micro-nano antireflection layer - Google Patents
The preparation method of solar energy photovoltaic glass with micro-nano antireflection layer Download PDFInfo
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- CN107863393A CN107863393A CN201710948030.9A CN201710948030A CN107863393A CN 107863393 A CN107863393 A CN 107863393A CN 201710948030 A CN201710948030 A CN 201710948030A CN 107863393 A CN107863393 A CN 107863393A
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- Prior art keywords
- solar energy
- energy photovoltaic
- micro
- glass substrate
- glass
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- 239000011521 glass Substances 0.000 title claims abstract description 161
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 52
- 239000011248 coating agent Substances 0.000 claims abstract description 40
- 238000000576 coating method Methods 0.000 claims abstract description 40
- 239000002318 adhesion promoter Substances 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 7
- 238000000465 moulding Methods 0.000 claims abstract description 6
- 239000002086 nanomaterial Substances 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000012459 cleaning agent Substances 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000004049 embossing Methods 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000004528 spin coating Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000003344 environmental pollutant Substances 0.000 description 6
- 231100000719 pollutant Toxicity 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000003595 mist Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000009736 wetting Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000005338 frosted glass Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000000935 solvent evaporation Methods 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- MJEMIOXXNCZZFK-UHFFFAOYSA-N ethylone Chemical compound CCNC(C)C(=O)C1=CC=C2OCOC2=C1 MJEMIOXXNCZZFK-UHFFFAOYSA-N 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000054 nanosphere lithography Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/73—Anti-reflective coatings with specific characteristics
- C03C2217/732—Anti-reflective coatings with specific characteristics made of a single layer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/119—Deposition methods from solutions or suspensions by printing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
A kind of preparation method of the solar energy photovoltaic glass with micro-nano antireflection layer, it comprises the following steps：A. glass substrate is placed in oxygen gas plasma and etched, so that modified glass substrate is made；B. one layer of organosilicon adhesion promoter is coated on the surface of the modified glass substrate, to form organosilicon adhesion promoter coating；C. one layer of photoresist is coated on the surface of the organosilicon adhesion promoter coating, to form photoresist coating；D. the glass substrate containing the photoresist coating is placed on into vacuum Embosser to be imprinted, and uses ultraviolet source irradiation, treat that the photoresist curing molding stops irradiation, so that antireflection layer presoma is made；E. the vacuum Embosser is removed, the antireflection layer presoma is put into plasma etch chamber, reacting gas is added and performs etching reaction, so that the solar energy photovoltaic glass with micro-nano antireflection layer is made.The preparation technology of the present invention is simple, and obtained solar energy photovoltaic glass has high-resolution and high phototranstormation efficiency performance.
Description
Technical field
The invention belongs to the preparing technical field of antireflection layer, more particularly to a kind of solar energy with micro-nano antireflection layer
The preparation method of photovoltaic glass.
Background technology
Photovoltaic generation enjoys the concern in the world, and photovoltaic technology is widely used in solar cell.Solar cell leads to
Open-air conditions often are arranged on, although the glass substrate on its surface can play a part of dust-proof, damp proof and avoid external impact,
That the pollutant of glass substrate accumulation easily absorbs sunshine and can scatter sunshine, and air and glass substrate it
Between refractive index mismatch so that incident light can produce substantial amounts of reflection and refraction when reaching solar cell surface, and then drop
The optoelectronic transformation efficiency of low solar cell.
Existing solar cell reduces the reflection of sunshine and dissipated in the surface of glass substrate design micro-nano structure layer
Penetrate, and keep solar panel to possess preferable photovoltaic performance in the presence of a harsh environment by the self-cleaning function of micro-nano structure layer.
The method of the micro-nano structure layer of existing structure glass substrate surface includes beamwriter lithography, focused ion beam lithography, laser and done
Relate to photoetching, nanosphere lithography and block copolymer photoetching process etc..However, these preparation methods exist preparation technology it is complicated, into
The shortcomings of this is higher, resolution ratio is poor, therefore be easily limited in industrial production application process, be not suitable for large-scale production.
The content of the invention
In view of the foregoing, it is necessary to provide that a kind of preparation technology is simple, cost is cheap and high-resolution there is micro-nano
The preparation method of the solar energy photovoltaic glass of antireflection layer.
A kind of preparation method of the solar energy photovoltaic glass with micro-nano antireflection layer, it comprises the following steps：
A. glass substrate is placed in oxygen gas plasma and etched, so that modified glass substrate is made；
B. one layer of organosilicon adhesion promoter is coated on the surface of the modified glass substrate, to form organosilicon attachment
Power accelerator coating；
C. one layer of photoresist is coated on the surface of the organosilicon adhesion promoter coating, to form photoresist coating；
D. the glass substrate containing the photoresist coating is placed on into vacuum Embosser to be imprinted, and uses ultraviolet light
Source is irradiated, and treats that the photoresist curing molding stops irradiation, so that micro-nano antireflection layer presoma is made；And
E. the vacuum Embosser is removed, the micro-nano antireflection layer presoma is put into plasma etch chamber,
Add reacting gas and perform etching reaction, and cleaned after the completion of reaction and drying process, there is micro-nano anti-reflection with obtained
Penetrate the solar energy photovoltaic glass of layer.
In one embodiment, also include cleaning and drying the glass substrate before step a.
In one embodiment, it is described cleaning glass substrate step used in cleaning agent be selected from acetone, ethanol, absolute ethyl alcohol or
One or more of combinations in high-purity isopropanol (IPA).
In one embodiment, also include the modified glass substrate carrying out baking processing, the baking before the step b
Roasting temperature is 200-220 DEG C, and the time of baking is 25-30min.
In one embodiment, also include being toasted the organosilicon adhesion promoter coating before the step c
Processing, the temperature of the baking is 150-160 DEG C, and the time of baking is 5-7min.
In one embodiment, also include the photoresist coating carrying out baking processing, the baking before the step d
Temperature be 80-90 DEG C, the time of baking is 2-3min.
In one embodiment, the photoresist includes organosilicon and organofluorine compound.
In one embodiment, the vacuum Embosser has reverse V-shaped nickel mould, so that the antireflection layer presoma
Form the micro-nano structure of V-type.
In one embodiment, the embossing pressure of the vacuum Embosser is 100-105Pa, the ultraviolet source irradiation
Intensity is 4.4-4.8mW/cm2, the time of the ultraviolet source irradiation is 4-5min.
In one embodiment, the reacting gas is SF6And O2Mixed gas, the time of the etching reaction is 16-
18min, the power of the etching reaction is 100-110W, and the air pressure of the etching reaction is 0.25-0.30Pa.
Compared to prior art, the present invention has the preparation method of the solar energy photovoltaic glass of micro-nano antireflection layer, passed through
Formed with organosilicon adhesion promoter coating between glass substrate and photoresist, so as to avoid photoresist peeling-off de-
Fall, and before organosilicon adhesion promoter coating is formed, glass substrate is first performed etching into processing, to obtain organosilicon attachment
Power accelerator coating is combined closely on glass substrate.In addition, photoresist is imprinted using vacuum Embosser, to form high-resolution
The micro-nano structure of rate, so as to reduce due to the mismatch between air and the micro-nano structure refractive index and the micro-nano structure
Scattering of the surface contaminant to sunshine absorbs, and reduce incident light can be produced when reaching solar battery surface it is substantial amounts of instead
Penetrate and reflect and lose, so as to improve the light conversion ratio of the solar energy photovoltaic glass.In addition, micro-nano structure also ensures
The photoresist has good demolding performace.Therefore, preparation method technique of the invention is simple, cost is cheap and obtained
Solar energy photovoltaic glass has high-resolution and high phototranstormation efficiency performance.
Brief description of the drawings
Fig. 1 is the synthetic route of the solar energy photovoltaic glass with micro-nano antireflection layer of a preferred embodiment of the present invention
Figure.
Fig. 2 is the SEM in the section of the solar energy photovoltaic glass with micro-nano antireflection layer obtained by the embodiment of the present invention 1
Collection of illustrative plates.
Fig. 3 is existing simple glass and the solar energy with micro-nano antireflection layer obtained by the embodiment of the present invention 1
Lie prostrate the test result figure of the light transmittance of glass.
Fig. 4 is existing simple glass and the solar energy with micro-nano antireflection layer obtained by the embodiment of the present invention 1
Lie prostrate the test result figure of the Surface haze of glass.
Fig. 5 is existing simple glass and the solar energy with micro-nano antireflection layer obtained by the embodiment of the present invention 1
Lie prostrate the test result figure at the surface wettability angle of glass.
Fig. 6 is using existing simple glass and the sun with micro-nano antireflection layer obtained by the embodiment of the present invention 1
I-V curve figure of the monocrystaline silicon solar cell of energy photovoltaic glass under the conditions of same light photograph.
Fig. 7 is using existing simple glass and the sun with micro-nano antireflection layer obtained by the embodiment of the present invention 1
The curve map of the monocrystaline silicon solar cell quantum efficiency of energy photovoltaic glass.
Main element symbol description
Nothing
Following embodiment will combine above-mentioned accompanying drawing and further illustrate the present invention.
Embodiment
As being used for this paper, term " room temperature " has its general sense well known in the art, and description indoor temperature is 25 DEG C
± 5 DEG C degrees Celsius.Term " micro-nano " refers to nanometer, the three-dimensional structure of micron dimension, device and system.
Referring to Fig. 1, the preparation method of the solar energy photovoltaic glass with micro-nano antireflection layer of the present invention, it is included such as
Lower step：
Step 100, cleaning and dry glass substrate.
Specifically, the glass substrate is placed in supersonic wave cleaning machine, and adds appropriate cleaning agent and be cleaned by ultrasonic 5-
10 minutes (min)；The glass substrate after cleaning is taken out, infiltrates a period of time with solvent, then dried up with inert gas.
Wherein, the thickness of the glass substrate is 0.3-0.5 nanometers (nm).It should be understood that clean the glass substrate
It is in order to remove the pollutant on the glass substrate, so as to avoid scattering absorption of the pollutant to incident light, Jin Erti
The light conversion ratio of the high solar energy photovoltaic glass.The cleaning agent for cleaning the glass substrate is organic solvent.It is described organic molten
Agent, it is, for example, but is not limited to acetone, ethanol, absolute ethyl alcohol, high-purity isopropanol (IPA) or the combination between them.
The time of the solvent infiltration is 2-10min.The solvent is, for example, but is not limited to pure water, high purity water or super
Pure water, the solution of other ions free from foreign meter can be used for the present invention.It should be understood that pure water (deionized water) refers to remove
It is in the pure water after ionic species impurity.When the temperature that high purity water refers mainly to water is 25 DEG C, electrical conductivity is less than 0.1us/cm, pH value
For 6.8-7.0 and the water of removal other impurities and bacterium.Ultra-pure water refers to that resistivity reaches 18M Ω * cm (25 DEG C) water.By institute
State the glass substrate solvent infiltration after cleaning agent cleaning be in order to remove the cleaning agent of glass substrate surface residual, so as to
In subsequently evenly etching glass substrate.The inert gas is nitrogen.
Step 102, the glass substrate after cleaning is placed in oxygen gas plasma and etched, so that modified glass substrate is made.
A period of time is etched specifically, the glass substrate after cleaning is placed in oxygen gas plasma, is changed with being made described
Property glass substrate；The modified glass substrate is toasted again, cooling treatment.The baking temperature is 200-220 DEG C, baking
Time is 25-30min.
Wherein, the time of etching is 3-4min.It should be understood that by the glass substrate progress corona treatment be for
The roughness of the enhancing glass baseplate surface, so as to promoting its bonding force between following film layers.
In the present embodiment, the modified glass substrate is put into oven and carries out baking processing, will after the completion of to be baked
It is cooled to room temperature, wherein, the baking temperature is 200 DEG C, baking time 30min.
Sent out it should be understood that baking processing can remove reacting gas in oxygen gas plasma etching with the glass substrate
The reactant that life is reacted and formed, so as to further remove the impurity of the residual on the glass substrate, and then avoids institute
State scattering of the impurity to incident light to absorb, to improve the light conversion ratio of the solar energy photovoltaic glass.The modified glass substrate
Room temperature is cooled to after baking, is effectively bonded to so as to be advantageous to following film layers on the glass substrate.
Step 104, one layer of organosilicon adhesion promoter is coated on the surface of the modified glass substrate, it is organic to be formed
Silicon adhesion promoter coating.
Specifically, the organosilicon adhesion promoter is coated on the surface of the glass substrate by spin coating proceeding, with
Form organosilicon adhesion promoter coating；The glass substrate containing the organosilicon adhesion promoter coating is dried again
Roasting, cooling treatment.
Wherein, the speed of the spin coating is 4000-4500rpm, the time 60-70s of the spin coating.The baking temperature is
150-160 DEG C, the baking time is 5-7min.It should be understood that the baking procedure enables to the organosilicon to adhere to
Power accelerator coating is combined closely with the glass substrate, is come off so as to prevent stripping.In the present embodiment, have described
The plating of machine silicon adhesion promoter, which is placed on hot plate, is toasted, and room temperature is cooled to after the completion of to be baked, wherein, the baking temperature
Spend for 150 DEG C, the baking time is 5min.
Step 106, one layer of photoresist is coated on the surface of the organosilicon adhesion promoter coating, to form photoresist
Coating.
Specifically, the photoresist is coated on the surface of the organosilicon adhesion promoter coating by spin coating proceeding,
To form photoresist coating.Glass substrate containing the photoresist coating is toasted, cooling treatment.
Wherein, the photoresist includes organosilicon and organofluorine compound.It should be understood that by the organosilicon and institute
Stating organofluorine compound has relatively low surface energy, therefore can realize that the photoresist has preferably good demolding performace.
The speed of the spin coating is 6000rpm, the time 60s of the spin coating.The baking temperature is 80-90 DEG C, the baking time
For 2-3min.It should be understood that the baking procedure enables to the organic solvent evaporation in the photoresist coating, so that
The photoresist is obtained to combine closely with the glass substrate.In the present embodiment, by the glass base containing the photoresist coating
Piece is placed on hot plate and toasted, and is cooled to room temperature after toasting, wherein, the baking temperature is 80 DEG C, during the baking
Between be 2min.
Step 108, the glass substrate containing the photoresist coating is placed on into vacuum Embosser to be imprinted, and used
Ultraviolet source irradiation, treat that the photoresist curing molding stops irradiation, so that micro-nano antireflection layer presoma is made.
Specifically, the glass substrate for being coated with the photoresist is directed at fixation with the vacuum Embosser, and pre-
If embossing pressure is imprinted, namely imprints the photoresist using contact method, so that it is guaranteed that the photoresist have it is good
Good demolding performace, and the micro nano structure of high resolution structures is formed, to reduce the pollution of environmental contaminants and incident ray
Scattering or reflection, so as to improve the light conversion ratio of solar energy photovoltaic glass.Then, using ultraviolet source irradiation coated with described
The glass substrate of photoresist for a period of time so that the photoresist curing molding.
Wherein, the vacuum Embosser has reverse V-shaped nickel mould, so that the antireflection layer presoma forms V-type
Micro-nano structure, with reduce due to the mismatch between air and the micro-nano structure refractive index and the surface of the micro-nano structure
Scattering of the pollutant to sunshine absorbs, and reduce incident light can be produced when reaching solar battery surface substantial amounts of reflection with
Reflect and lose, so as to improve the light conversion ratio of the solar energy photovoltaic glass.In addition, the micro-nano structure of V-type can also be true
Protecting the photoresist has good demolding performace.
It should be understood that in other embodiments, the nickel mould can also be arranged to other shapes, and the nickel mould pair
There should be micro-nano structure.The embossing pressure of the vacuum Embosser is 100Pa.The intensity of the ultraviolet source irradiation is
4.4mW/cm2, the time of the ultraviolet source irradiation is 4 minutes.
Step 110, the vacuum Embosser is removed, the micro-nano antireflection layer presoma is put into plasma etching
In chamber, add reacting gas and perform etching reaction, and cleaned after the completion of reaction and drying process, there is micro-nano with obtained
The solar energy photovoltaic glass of antireflection layer.
The reacting gas is SF6(40sccm) and O2The mixed gas of (4sccm), the time of the etching reaction is
16min, the power of the etching reaction is 100W, and the air pressure of the etching reaction is 0.25Pa.
It should be understood that after ultraviolet photolithographic, the V-type pattern of nickel mould is transferred on photoresist, is handled through demoulding
The V-type pattern being transferred on the photoresist is transferred on cover plate substrate by plasma etching again afterwards, so as to which tool be made
There is the solar energy photovoltaic glass of micro- sodium automatically cleaning optics antireflection layer.In other embodiments, the micro-nano antireflection layer can be with
Applied to other photovoltaic substrates.
The details of the present invention is further described below by specific embodiment.
Embodiment 1
The glass substrate that thickness is 0.4nm is put into supersonic wave cleaning machine, absolute ethyl alcohol is respectively adopted and is cleaned by ultrasonic about
5-10min, to remove the pollutant on glass substrate.Glass substrate is taken out, 2min is infiltrated with deionized water, removes remained on surface
Chemical reagent, then glass is dried up into the glass substrate with nitrogen.Glass substrate after cleaning is put into oxygen gas plasma
Middle etching 4min, so that modified glass substrate is made.The modified glass substrate is put into 200 DEG C of ovens and toasts 30min, to go
Except reacting gas and the glass substrate react the reactant to be formed in oxygen plasma etching, stop it after baking
It is cooled to room temperature.Organosilicon adhesion promoter is coated in by cover-plate glass surface using spin coating proceeding, wherein, spin speed is
4000rpm, the time of spin coating is 60s, to form organosilicon adhesion promoter coating.By the organosilicon adhesion promoter
Plating, which is placed on 150 DEG C of hot plate, toasts 5min, so that the organosilicon adhesion promoter and the modified glass substrate are tight
Close combination, come off so as to prevent stripping, be cooled to room temperature immediately.Continue on the surface of organosilicon adhesion promoter coating
One layer of photoresist of spin coating, spin speed and time are respectively 6000rpm and 60s, to form photoresist coating.Photoresist will be contained
The glass substrate of coating is placed in prebake conditions 2min on 80 DEG C of hot plate, so that organic solvent evaporation, so that the photoresist
Combined closely with the organosilicon adhesion promoter coating.By the glass substrate for coating photoresist and reverse V-shaped nickel mould pair
Standard is fixed, and carries out impressing processing in the case where pressure is 100Pa.Then, using 4.4mW/cm2Ultraviolet source irradiation 4min, treat institute
State photoresist curing molding and stop irradiation, so that micro-nano antireflection layer presoma is made.Reverse V-shaped nickel mould is removed, will be described micro-
Antireflection layer presoma of receiving is put into plasma etch chamber, and the mixed gas for being passed through SF6 (40sccm) and O2 (4sccm) is carved
16min is lost, wherein, etching power is 100W, and etching air pressure is 0.25Pa.
Performance test
Fig. 2 illustrates the sweep electron microscope in the section of the solar energy photovoltaic glass obtained by embodiment 1
(scanning electron microscope, SEM) figure.From figure 2 it can be seen that the solar energy obtained by embodiment 1
Clearly V-structure, the solar energy photovoltaic glass are micro-nano solar energy photovoltaic glass for the section presentation of volt glass.Thus may be used
Know, preparation method of the invention can obtain high-resolution micro-nano solar energy photovoltaic glass.
Fig. 3 illustrates existing simple glass and the photovoltaic with micro-nano antireflection layer obtained by embodiment 1
The test result figure of the transmitance of glass.Wherein, existing simple glass uses commercially available product.From figure 3, it can be seen that work as
When the wavelength of irradiation light is more than 400nm, the solar energy photovoltaic glass with micro-nano antireflection layer obtained by embodiment 1 that measures
Transmitance be more than existing simple glass transmitance.
Fig. 4 illustrates existing simple glass and the photovoltaic with micro-nano antireflection layer obtained by embodiment 1
The test result figure of the mist degree of glass.The mist degree is also known as turbidity, and it represents the unsharp degree of transparent or semitransparent material,
It that is to say material internal or surface due to cloud caused by light scattering or the outward appearance of muddiness.Light transmittance and mist degree are that assessment is transparent
The important indicator of the optical property of material, in general, the high material of light transmittance, haze value is low, and vice versa, but also incomplete
So.Some material transmissivities are high, and haze value is but very big, such as frosted glass.It will be appreciated by those skilled in the art that, the hair
Glass is also cloudy surface glass, anti-dazzle glas etc., is with a kind of honed or chemically treated rough surface such as diamond dust
The translucent glass of out-of-flatness.
Also referring to Fig. 3 and Fig. 4, when the wavelength of incident ray is 550nm, subtracting with micro-nano obtained by embodiment 1
The transmissivity of the solar energy photovoltaic glass in reflecting layer is about 95%, and mist degree is about 10%.When the wavelength of incident ray is less than
550nm, the transmissivity of the micro-nano solar energy photovoltaic glass obtained by embodiment 1 are approximately less than 95%, and mist degree is approximately more than 10%, because
This, equivalent to frosted glass, it greatly reduces on the solar energy photovoltaic glass surface with micro-nano antireflection layer obtained by embodiment 1
Reflection of the micro-nano antireflection layer glass surface to light, so as to improving the light conversion ratio of solar cell.
Fig. 5 (a) and Fig. 5 (b) respectively show existing simple glass and the photovoltaic with micro-nano antireflection layer
The moistened surface angle of glass.As shown in Fig. 5 (a), the surface wettability angle that existing simple glass measures is about 15 °.Such as Fig. 5 (b)
Shown, the surface wettability angle that the micro-nano solar energy photovoltaic glass obtained by embodiment 1 measures is about 119 °.Those skilled in the art
It will be appreciated that, the angle of wetting refers to the angle of liquid-solid boundary and liquid surface tangent line at the contact point of liquid phase and solid phase.When
When angle of wetting is less than 90 °, wetting is represented；When angle of wetting is more than 90 °, expression is nonwetting.Due to obtained by embodiment 1 have it is micro-
It is 119 ° to receive the solar energy photovoltaic glass moistened surface angle of antireflection layer, and its angle of wetting is more than 90 °, therefore obtained by embodiment 1
Micro-nano solar energy photovoltaic glass can play dust-proof, damp proof effect, so as to the solar battery group being prepared using its
With automatical cleaning ability.
Fig. 6 illustrates the monocrystalline using existing simple glass and the micro-nano solar energy photovoltaic glass obtained by embodiment 1
I-V curve of the silicon solar cell under identical light intensity.From fig. 6, it can be seen that the monocrystalline silicon sun using existing simple glass
The open-circuit voltage of energy battery is 0.58V, short-circuit current density 31.5mA/cm2, and the micro-nano obtained by Application Example 1 is too
The open-circuit voltage of the monocrystaline silicon solar cell of positive energy photovoltaic glass is 0.581V, short circuit current 33.0mA/cm2.Solar energy
The energy conversion efficiency formula of battery is as follows：
μ=(ISC×VOC× FF)/(E × A),
Wherein, ISCIt is expressed as short-circuit current density；VOCIt is expressed as open-circuit voltage；E is expressed as intensity of illumination；A be expressed as by
Light area；FF is expressed as fill factor, curve factor, FF=(VOC-ln(VOC+0.72))/(VOC+1)。
Same light photograph under the conditions of, due to application existing simple glass monocrystaline silicon solar cell open-circuit voltage with
The open-circuit voltage of the monocrystaline silicon solar cell of micro-nano solar energy photovoltaic glass obtained by Application Example 1 is identical, and applies
The short-circuit current density of the monocrystaline silicon solar cell of existing simple glass is less than the micro-nano sun obtained by Application Example 1
Can photovoltaic glass monocrystaline silicon solar cell short-circuit current density, therefore, pass through the energy conversion rate of solar cell
Calculation formula understands that the energy of the monocrystaline silicon solar cell of the micro-nano solar energy photovoltaic glass obtained by Application Example 1 turns
Change the energy conversion rate that rate is higher than the monocrystaline silicon solar cell of the existing simple glass of application.
Fig. 7 illustrates the monocrystalline using the micro-nano solar energy photovoltaic glass obtained by existing simple glass and embodiment 1
Silicon solar cell quantum efficiency curve.There is solar irradiation to be mapped to the sun it should be understood that quantum efficiency of solar battery refers to work as
When on energy battery, the ratio of photo-generated carrier number and incident light subnumber caused by inside solar energy battery, it is one and is less than 1
Nondimensional number.From figure 7 it can be seen that the dominant spectral of two kinds of batteries responds section all in visible light wave range, entirely may be used
See in optical band, the single crystal silicon solar cell quantum efficiency of the micro-nano solar energy photovoltaic glass obtained by Application Example 1 is more than
Using the single crystal silicon solar cell quantum efficiency of existing simple glass.Therefore, the micro-nano solar energy obtained by Application Example 1
The single crystal silicon solar cell of photovoltaic glass is higher than the monocrystalline silicon sun electricity of the existing simple glass of application to the utilization rate of sunshine
Pond.
The solar energy photovoltaic glass with micro-nano antireflection layer of the present invention, first, by the way that glass substrate is cleaned
And pretreatment is dried, to remove the pollutant of glass substrate residual, so as to improve the light conversion ratio of solar energy photovoltaic glass.Its
It is secondary, formed with organosilicon adhesion promoter coating between glass substrate and photoresist, so as to avoid photoresist peeling-off
Come off, and before organosilicon adhesion promoter coating is formed, glass substrate is first performed etching into processing, it is attached to obtain organosilicon
Adhesion promoter coating is combined closely on glass substrate.Again, contain in the photoresist with relatively low organic of surface energy
Silicon and organofluorine compound, so that photoresist can possess good demolding performace.Further, photoresist is using V
The nickel mould of type carries out contact impressing, has high-resolution V-type micro-nano structure to be formed, with reduction due to air and described
Scattering of the surface contaminant of mismatch and the micro-nano structure between micro-nano structure refractive index to sunshine absorbs, and reduces
Incident light can produce substantial amounts of reflection and refraction when reaching solar battery surface and lose, so as to improve the sun
The light conversion ratio of energy photovoltaic glass.In addition, the micro-nano structure of V-type also ensures that the photoresist has good demolding performace.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, embodiment of above are only for explaining claims.Right protection scope of the present invention is not limited to specification.Appoint
What those familiar with the art is in the technical scope of present disclosure, the change or replacement that can readily occur in,
It is included within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of the solar energy photovoltaic glass with micro-nano antireflection layer, it comprises the following steps：
A. glass substrate is placed in oxygen gas plasma and etched, so that modified glass substrate is made；
B. one layer of organosilicon adhesion promoter is coated on the surface of the modified glass substrate, is made every effort to promote with forming organosilicon attachment
Enter agent coating；
C. one layer of photoresist is coated on the surface of the organosilicon adhesion promoter coating, to form photoresist coating；
D. the glass substrate containing the photoresist coating is placed on into vacuum Embosser to be imprinted, and shone using ultraviolet source
Penetrate, treat that the photoresist curing molding stops irradiation, so that micro-nano antireflection layer presoma is made；And
E. the vacuum Embosser is removed, the micro-nano antireflection layer presoma is put into plasma etch chamber, is added
Reacting gas performs etching reaction, and is cleaned after the completion of reaction and drying process, has micro-nano antireflection layer to be made
Solar energy photovoltaic glass.
2. the preparation method of solar energy photovoltaic glass as claimed in claim 1, it is characterised in that also include before step a
Clean and dry the glass substrate.
3. the preparation method of solar energy photovoltaic glass as claimed in claim 2, it is characterised in that the cleaning glass substrate step
Rapid cleaning agent used is selected from one or more of combinations in acetone, ethanol, absolute ethyl alcohol or high-purity isopropanol (IPA).
4. the preparation method of solar energy photovoltaic glass as claimed in claim 1, it is characterised in that also wrapped before the step b
Include and the modified glass substrate is subjected to baking processing, the temperature of the baking is 200-220 DEG C, and the time of baking is 25-
30min。
5. the preparation method of solar energy photovoltaic glass as claimed in claim 1, it is characterised in that also wrapped before the step c
Include and the organosilicon adhesion promoter coating be subjected to baking processing, the temperature of the baking is 150-160 DEG C, baking when
Between be 5-7min.
6. the preparation method of solar energy photovoltaic glass as claimed in claim 1, it is characterised in that also wrapped before the step d
Include and the photoresist coating is subjected to baking processing, the temperature of the baking is 80-90 DEG C, and the time of baking is 2-3min.
7. the preparation method of solar energy photovoltaic glass as claimed in claim 1, it is characterised in that the photoresist includes organic
Silicon and organofluorine compound.
8. the preparation method of solar energy photovoltaic glass as claimed in claim 1, it is characterised in that the vacuum Embosser tool
There is reverse V-shaped nickel mould, so that the antireflection layer presoma forms the micro-nano structure of V-type.
9. the preparation method of solar energy photovoltaic glass as claimed in claim 1, it is characterised in that the vacuum Embosser
Embossing pressure is 100-105Pa, and the intensity of the ultraviolet source irradiation is 4.4-4.8mW/cm2, the ultraviolet source irradiation
Time is 4-5min.
10. the preparation method of solar energy photovoltaic glass as claimed in claim 1, it is characterised in that the reacting gas is SF6
And O2Mixed gas, the time of the etching reaction is 16-18min, and the power of the etching reaction is 100-110W, described
The air pressure of etching reaction is 0.25-0.30Pa.
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| CN116093196B (en) * | 2022-11-08 | 2024-01-23 | 新源劲吾(北京)科技有限公司 | Preparation method of color backboard, color photovoltaic module and preparation method of color photovoltaic module |
| CN116093195B (en) * | 2022-11-08 | 2024-02-13 | 新源劲吾(北京)科技有限公司 | Method for improving adhesiveness of color layer in color photovoltaic module |
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