CN107832502A - The determination method, apparatus and terminal device of memristor voltage and current relationship - Google Patents
The determination method, apparatus and terminal device of memristor voltage and current relationship Download PDFInfo
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Abstract
The present invention provides a kind of the determination method, apparatus and terminal device of memristor voltage and current relationship, wherein, this method includes：According to corresponding relation between default time and memristor thickness proportion, and flow through the electric current of memristor, determine the speed that electric current moves from the doped region of memristor to the undoped region of memristor, wherein, memristor thickness proportion is the doped region width of memristor and the undoped peak width ratio of memristor；Flow through the time of memristor every time according to speed and electric current, obtain the current width of the doped region of memristor；According to the current width and electric current of the doped region of memristor, with the voltage for determining memristor and the relational expression of electric current.So as to when electric current has flowed to the doped region border or undoped region border of memristor, the voltage of memristor, which is calculated, to undergo mutation, it is easy to when memristor is applied in the devices such as memory, goes to handle memory etc. using the magnitude of voltage of memristor.
Description
Technical field
The present invention relates to electronic technology field, more particularly to a kind of determination method of memristor voltage and current relationship, dress
Put and terminal device.
Background technology
Memristor, also referred to as memory resistor (Memristor), memristor are a kind of variable resistors of resistance, its electricity
Resistance changes with the change of the voltage or electric current that are added in its both sides, when memristor both sides add forward voltage, when its resistance
Value can become it is very small close to 0 when, its resistance is referred to as RON；On the contrary, when its both sides add negative voltage, when its resistance
When value can increase to maximum, its resistance is referred to as ROFF.Memristor can be applied in the devices such as memory.
In the prior art, when using memristor, it is thus necessary to determine that the voltage of memristor, according to time t change, obtain
To the change of the resistance of memristor, and then the voltage of memristor is calculated according to Ohm's law, i.e. the voltage of memristor be with
The time and change.
But in the prior art because it is determined that memristor voltage when, only consider the change of t over time, obtain
To memristor each when the resistance value inscribed, go to obtain the voltage that memristor is inscribed at each；But when positive electricity
Stream passes through memristor, and the doped region (Doped Area) of memristor can broaden, and then the resistance of memristor diminishes, in memristor
Doped region maximum when, the resistance of obtained memristor is Ron=0, be now calculated memristor voltage be 0；
When reversing current through memristor, the undoped region (Undoped Area) of memristor can increase, and then the resistance of memristor
Become big, when the undoped region maximum of memristor, the resistance of obtained memristor is very big for Roff, is now calculated
The voltage of memristor also can be very big；And then when the resistance of memristor is extreme value, the voltage of obtained memristor is also at
The state of extreme value, when removing to calculate the voltage of the devices such as memory using such data, influence whether the devices such as memory
Normal calculating process.
The content of the invention
The present invention provides a kind of the determination method, apparatus and terminal device of memristor voltage and current relationship, to solve
When the data obtained in the prior art using existing way remove to calculate the voltages of device such as memory, memory is influenced whether
Deng device normal calculating process the problem of.
The first aspect of the present invention is to provide a kind of determination method of memristor voltage and current relationship, including：
According to corresponding relation between default time and memristor thickness proportion, and the electric current of memristor is flowed through, it is determined that
The speed that electric current moves from the doped region of memristor to the undoped region of memristor, wherein, the memristor thickness proportion
The undoped peak width ratio of doped region width and memristor for memristor；
Flow through the time of the memristor every time according to the speed, electric current, determine the doped region of the memristor
Current width；
According to the current width of the doped region of the memristor and the electric current, the voltage and electric current of memristor are determined
Relational expression.
The second aspect of the present invention is to provide a kind of determining device of memristor voltage and current relationship, including：
First computing module, for according to corresponding relation between default time and memristor thickness proportion, and flow through
The electric current of memristor, the speed that electric current moves from the doped region of memristor to the undoped region of memristor is determined, wherein, institute
Memristor thickness proportion is stated as the doped region width of memristor and the undoped peak width ratio of memristor；
Second computing module, for flowing through the time of the memristor every time according to the speed and electric current, determine institute
State the current width of the doped region of memristor；
First determining module, current width and the electric current for the doped region according to memristor, determines memristor
Voltage and electric current relational expression.
The third aspect of the present invention is to provide a kind of terminal device, including：Memory and processor；
Wherein, the memory, the instruction executable for storing the processor；The processor, for performing the
On the one hand the method provided.
The solution have the advantages that：By according to corresponding relation between default time and memristor thickness proportion, with
And the electric current of memristor is flowed through, the speed that electric current moves from the doped region of memristor to the undoped region of memristor is determined,
Wherein, memristor thickness proportion is the doped region width of memristor and the undoped peak width ratio of memristor；According to speed
Degree and electric current flow through the time of memristor every time, determine the current width of the doped region of memristor；According to mixing for memristor
The current width and electric current in miscellaneous region, determine the voltage of memristor and the relational expression of electric current.By in memristor electric current from mixing
Increase corresponding relation between a default time and memristor thickness proportion in the speed that miscellaneous area moves to undoped region, so as to
In the voltage of obtained memristor and the relational expression of electric current, moved with the doped region of time and memristor to undoped region
Thickness proportion has relation.So as to when electric current has flowed to the doped region border or undoped region border of memristor, calculate
Voltage to memristor will not undergo mutation, and be easy to when memristor is applied in the devices such as memory, using memristor
The magnitude of voltage of device goes to handle memory etc..
Brief description of the drawings
Fig. 1 is the flow chart of the determination method of the memristor voltage that the embodiment of the present invention one provides and current relationship；
Fig. 2 is the base of the memristor in the determination method of the memristor voltage that the embodiment of the present invention one provides and current relationship
The schematic diagram of this model；
Fig. 3 is the flow chart of the determination method of the memristor voltage that the embodiment of the present invention two provides and current relationship；
Fig. 4 is the corresponding relation in the determination method of the memristor voltage that the embodiment of the present invention two provides and current relationship
Schematic diagram；
Fig. 5 is the structural representation of the determining device of the memristor voltage that the embodiment of the present invention three provides and current relationship；
Fig. 6 is the structural representation of the determining device of the memristor voltage that the embodiment of the present invention four provides and current relationship；
Fig. 7 is the structural representation for the terminal device that the embodiment of the present invention five provides.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Noun involved in the present invention is explained first：
Memristor：Formed between being clipped in two platinum plate electrodes by two layers of titanium deoxid film.Wherein, two layers of titanium dioxide
Titanium film is all semi-conducting material；Layer of titanium dioxide film is the TiO through overdoping(2-x), referred to as doped region；Another layer two
Thin film of titanium oxide is the TiO without overdoping2, referred to as undoped region.Wherein, the doped region of the thickness of memristor, memristor
The width in domain, the unit of width in the undoped region of memristor are all nanometers.
The memristor voltage and the flow chart of the determination method of current relationship that Fig. 1 provides for the embodiment of the present invention one, such as Fig. 1
Shown, the method for the present embodiment includes：
Step 101, according to corresponding relation between default time and memristor thickness proportion, and flow through the electricity of memristor
Stream, the speed that electric current moves from the doped region of memristor to the undoped region of memristor is determined, wherein, memristor thickness ratio
Example is the doped region width of memristor and the undoped peak width ratio of memristor.
In the present embodiment, specifically, in memristor, it is former that the titanium dioxide TiO (2-x) through overdoping has lacked several oxygen
Son, therefore positively charged, so when forward current leads to undoped region from doped region, the titanium dioxide of positively charged is in electric field
In the presence of can to undoped region drift about.
Fig. 2 is the base of the memristor in the determination method of the memristor voltage that the embodiment of the present invention one provides and current relationship
The schematic diagram of this model, as shown in Fig. 2 the basic model of memristor is referred to as linear barrier's drift model.This model
In D be memristor two layers of titanium deoxid film gross thickness, can use W represent memristor doped region width, W energy
It is enough to change with external electric field；When forward current can be broadened by memristor, doped region, and then the width W of doped region can increase,
Diminish so as to total resistance of memristor；When reversing current through memristor, undoped region can increase, and then the width of doped region
Degree W can diminish, so as to which total resistance of memristor becomes big.For always upper, memristor is like a slide rheostat, and it is slided
Piece is automatically controlled by the electric charge for flowing through the memristor.Under this linear barrier's drift model, memristor can be seen as
The resistance of two series connection.
The doped region width of memristor and the undoped peak width ratio of memristor, referred to as memristor thickness proportion.
Can be according to corresponding relation between default time and memristor thickness proportion, and the electric current of memristor is flowed through, it is calculated
The speed that electric current moves from the doped region of memristor to the undoped region of memristor.Wherein, t change over time, stream
Electric current i (t) through memristor is change, can detect i (t) value in real time.
Step 102, the time for flowing through according to speed and electric current memristor every time, determine the doped region of memristor
Current width.
In the present embodiment, specifically, the speed calculated is multiplied by into the time that electric current flows through memristor every time, recalled
Hinder the current width W (t) of the doped region of device.Specifically, when first time, when forward current passes through memristor, doping
Region can be broadened, and the speed calculated using step 101 is multiplied by into time of the current forward current by memristor, recalled
Hinder the current width W (t) of the doped region of device；When secondary, when reversing current through memristor, undoped region can become
Width, now doped region can narrow, the speed calculated using step 101 is multiplied by the current memristor that reverses current through
Time, obtain the current width W (t) of the doped region of memristor；When third time, when forward current is by memristor, mix
Miscellaneous region can be broadened, and the speed calculated using step 101 is multiplied by into time of the current forward current by memristor, obtained
The current width W (t) of the doped region of memristor；When 4th time, when reversing current through memristor, undoped region meeting
Broaden, now doped region can narrow, and the speed calculated using step 101 is multiplied by and current reverses current through memristor
Time, obtain the current width W (t) of the doped region of memristor；The like, memristor is flowed through every time in each primary current
When, the time of memristor can be flowed through according to each forward current or reverse current and be calculated according to step 101
Speed, obtain the current width W (t) of the doped region of memristor.
Step 103, current width and electric current according to the doped region of memristor, determine the voltage and electric current of memristor
Relational expression.
In the present embodiment, specifically, by the current width W (t) of the doped region of memristor, electric current i (t), it is brought into
Default formulaIn, the voltage of memristor and the relation of electric current can be obtained
Formula.Wherein, D be memristor thickness, RONResistance value when for memristor being entirely doped region, ROFFIt is entirely for memristor
Resistance value during undoped region.
The present embodiment is by according to corresponding relation between default time and memristor thickness proportion, and flows through memristor
Electric current, determine the speed that undoped region of the electric current from the doped region of memristor to memristor is moved, wherein, memristor is thick
Degree ratio is the doped region width of memristor and the undoped peak width ratio of memristor；It is every according to speed and electric current
The secondary time for flowing through memristor, determine the current width of the doped region of memristor；According to the current of the doped region of memristor
Width and electric current, determine the voltage of memristor and the relational expression of electric current.By in memristor electric current from doped region to undoped
Increase corresponding relation between a default time and memristor thickness proportion, the memristor obtained from the speed of area's movement
Voltage and electric current relational expression in, it is relevant with the thickness proportion that the doped region of time and memristor moves to undoped region
System.So as to which when electric current has flowed to the doped region border or undoped region border of memristor, the electricity of memristor be calculated
Pressure will not undergo mutation, and be easy to when memristor is applied in the devices such as memory, go using the magnitude of voltage of memristor
Memory etc. is handled.
The memristor voltage and the flow chart of the determination method of current relationship that Fig. 3 provides for the embodiment of the present invention two, such as Fig. 3
Shown, the method for the present embodiment includes：
Step 201, according to corresponding relation y between default time and memristor thickness proportion, establish first function relation f
(y)=1- (y-stp (- i))2p, wherein,I represents to flow through the value of the sense of current of memristor, p tables
Show constant, p is positive integer, and memristor thickness proportion is the doped region width of memristor and the undoped peak width of memristor
Ratio.
In the present embodiment, specifically, corresponding relation y between time and memristor thickness proportion can be pre-set out,
Change i.e. over time, memristor thickness proportion are conversion, and the value of memristor thickness proportion and time are to corresponding；Wherein,
Memristor thickness proportion is the doped region width of memristor and the undoped peak width ratio of memristor.
Then, according to corresponding relation y between the time and memristor thickness proportion, a first function relation f is established out
(y)=1- (y-stp (- i))2p, wherein,I is the value for the sense of current for flowing through memristor, i.e., electric
Flow for forward current when, doped region can broaden, at this moment value i >=0 of sense of current, undoped when electric current is reverse current
Region can broaden, at this moment the value i of sense of current<0；P is a constant, and p is positive integer.Fig. 4 is that the embodiment of the present invention two carries
The schematic diagram of the memristor voltage of confession and the corresponding relation in the determination method of current relationship, as shown in figure 4, what is used is default
Corresponding relation y between time and memristor thickness proportion, can be obtainedLetter between f (y) values of the corresponding relation
Number relation, as shown in figure 4, wherein, the current width of the doped region of W (t) memristors, D is the thickness of memristor.
Step 202, first function relation f (y) is multiplied by electric current i (t), obtains electric current from the doped region of memristor to recalling
Hinder the speed of the undoped region movement of deviceWherein, the η when memristor is applied in forward voltage
Value be 1, when memristor is applied in backward voltage, η value is -1, μv=3 × 10-8m2/ s/V, RONRepresent that memristor is entirely
Resistance value during doped region, D represent the thickness of memristor, and i (t) represents the electric current for flowing through memristor detected in real time, t tables
Show that electric current flows through the time of memristor every time.
In the present embodiment, specifically, what electric current moved from the doped region of memristor to the undoped region of memristor
SpeedWherein, i (t) is the electric current for flowing through memristor detected in real time, and t is expression electric current
The time of memristor is flowed through every time, and t change i (t) is change over time；μvIt is the cation under a specific voltage
Average drift speed, is a constant, value μv=3 × 10-8m2/s/V；η value is 1 or -1, adds forward voltage, is adulterated
η just takes 1 if region becomes big, if instead plus forward voltage, η just takes -1 if doped region diminishes；RONIt is complete for memristor
For doped region when resistance value, D be memristor thickness.By step 201- steps 202, it is every electric current can be obtained in real time
The speed that the secondary doped region from memristor moves to the undoped region of memristor.
Step 203, the time for flowing through according to speed and electric current memristor every time, determine the doped region of memristor
Current width.
Wherein, the current width W (t) of the doped region of memristor=v*t.
In the present embodiment, specifically, speed v is multiplied by into the time t that electric current flows through memristor every time, memristor is obtained
The current width W (t) of doped region=v*t, i.e.,Understand, the doped region of memristor
Current width W (t), in real time over time t change and change.Also, this step may refer to Fig. 1 step 102.
Step 204, current width and electric current according to the doped region of memristor, determine the voltage and electric current of memristor
Relational expression.
Wherein, the voltage of memristor and the relational expression of electric current areIts
In, ROFFRepresent resistance value when memristor is entirely undoped region.
In the present embodiment, specifically, by the current width W (t) of the doped region of memristor, electric current i (t), it is brought into
In default formulaObtain the voltage of memristor and the relational expression of electric current.
Wherein, ROFFResistance value when for memristor being entirely undoped region.
Specifically, because the resistance of memristor is M (t)=RONX+ROFF(1-X), wherein,So as to
Obtain V (t)=M (t) i (t)=(RONX+ROFF(1-X)) * i (t), i.e.,
According toIt is derived by
Further according to f (y)=1- (y-stp (- i))2p, can be derived byAnd then obtain memristor
In the voltage of device and the relational expression V (t) of electric current, the doped region of V (t) and time t and memristor moves to undoped region
Thickness proportion have relation, wherein, the thickness proportion is doped region width and the undoped region of memristor of memristor
Width ratio.
Step 205, the current voltage for determining according to relational expression memristor in real time；It is right according to the current voltage of memristor
Memristor carries out calculating processing.
In the present embodiment, specifically, relational expression according to the voltage of memristor and electric currentDetermine in real time
The current voltage of memristor；Then according to the current voltage of memristor, calculating processing is carried out to memristor, such as calculate memristor
Power of device etc..According to the relational expression determined in step 204, the current voltage of memristor can be calculated in real time, just
In the current voltage according to memristor, the parameters such as power are calculated to memristor, and then can be gone according to the parameter calculated pair
Memristor carries out related calculating and processing there is provided devices such as the memories of memristor.
The present embodiment is by according to corresponding relation between default time and memristor thickness proportion, and flows through memristor
Electric current, determine the speed that undoped region of the electric current from the doped region of memristor to memristor is moved, wherein, memristor is thick
Degree ratio is the doped region width of memristor and the undoped peak width ratio of memristor；Speed is multiplied by into electric current to flow every time
Time through memristor, obtain the current width of the doped region of memristor；According to the current width of the doped region of memristor
And electric current, determine the voltage of memristor and the relational expression of electric current.By in memristor electric current moved from doped region to undoped region
Dynamic speed vDOne f (y) of middle increase, is obtainedF (y)=1- (y-stp (- i))2p,
Wherein,I is the value for the sense of current for flowing through memristor, and y characterizes default time and memristor thickness
Corresponding relation between ratio；In the voltage of memristor and the relational expression V (t) of electric current obtained from, V (t) flows every time with electric current
The thickness proportion that the doped region of time t and memristor through memristor move to undoped region has relation.So as in electric current stream
When having arrived the doped region border or undoped region border of memristor, the voltage of memristor, which is calculated, to undergo mutation,
It is easy to when memristor is applied in the devices such as memory, goes to locate memory etc. using the magnitude of voltage of memristor
Reason.
Fig. 5 is the structural representation of the determining device of the memristor voltage that the embodiment of the present invention three provides and current relationship,
As shown in figure 5, the device that the present embodiment provides, including：
First computing module 31, for according to corresponding relation, Yi Jiliu between default time and memristor thickness proportion
Electric current through memristor, the speed that electric current moves from the doped region of memristor to the undoped region of memristor is determined, wherein,
Memristor thickness proportion is the doped region width of memristor and the undoped peak width ratio of memristor；
Second computing module 32, for flowing through the time of memristor every time according to speed and electric current, determine memristor
The current width of doped region；
First determining module 33, for the current width and electric current of the doped region according to memristor, determine memristor
The relational expression of voltage and electric current.
The memristor voltage of the present embodiment and the determining device of current relationship can perform recalling for the offer of the embodiment of the present invention one
The determination method of device voltage and current relationship is hindered, its realization principle is similar, and here is omitted.
The present embodiment is by according to corresponding relation between default time and memristor thickness proportion, and flows through memristor
Electric current, determine the speed that undoped region of the electric current from the doped region of memristor to memristor is moved, wherein, memristor is thick
Degree ratio is the doped region width of memristor and the undoped peak width ratio of memristor；It is every according to speed and electric current
The secondary time for flowing through memristor, determine the current width of the doped region of memristor；According to the current of the doped region of memristor
Width and electric current, determine the voltage of memristor and the relational expression of electric current.By in memristor electric current from doped region to undoped
Increase corresponding relation between a default time and memristor thickness proportion, the memristor obtained from the speed of area's movement
Voltage and electric current relational expression in, it is relevant with the thickness proportion that the doped region of time and memristor moves to undoped region
System.So as to which when electric current has flowed to the doped region border or undoped region border of memristor, the electricity of memristor be calculated
Pressure will not undergo mutation, and be easy to when memristor is applied in the devices such as memory, go using the magnitude of voltage of memristor
Memory etc. is handled.
Fig. 6 is the structural representation of the determining device of the memristor voltage that the embodiment of the present invention four provides and current relationship,
On the basis of embodiment three, as shown in fig. 6, the device that the present embodiment provides, the first computing module 31, including：
Setting up submodule 311, for according to corresponding relation y between default time and memristor thickness proportion, establishing
One functional relation f (y)=1- (y-stp (- i))2p, wherein,I represents to flow through the electric current of memristor
The value in direction, p represent constant, and p is positive integer；
Calculating sub module 312, for first function relation f (y) to be multiplied by into electric current i (t), obtain electric current mixing from memristor
The speed that miscellaneous region is moved to the undoped region of memristorWherein, it is applied in just in memristor
It is 1 to the value of η during voltage, when memristor is applied in backward voltage, η value is -1, μv=3 × 10-8m2/ s/V, RONExpression is recalled
Resistance value when device is entirely doped region is hindered, D represents the thickness of memristor, and i (t) represents that what is detected in real time flows through memristor
Electric current, t represents that electric current flows through time of memristor every time.
The current width W (t) of the doped region of memristor=v*t；The voltage of memristor and the relational expression of electric current areWherein, ROFFRepresent resistance when memristor is entirely undoped region
Value.
The device that the present embodiment provides, in addition to：
Second determining module 41, for the current width and electricity in the first determining module 33 according to the doped region of memristor
Stream, after determining the voltage of memristor and the relational expression of electric current, according to the current voltage of relational expression, in real time determination memristor.
Processing module 42, for the second determining module 41 determine memristor current voltage after, according to memristor
Current voltage, calculating processing is carried out to memristor.
The memristor voltage of the present embodiment and the determining device of current relationship can perform recalling for the offer of the embodiment of the present invention two
The determination method of device voltage and current relationship is hindered, its realization principle is similar, and here is omitted.
The present embodiment is by according to corresponding relation between default time and memristor thickness proportion, and flows through memristor
Electric current, determine the speed that undoped region of the electric current from the doped region of memristor to memristor is moved, wherein, memristor is thick
Degree ratio is the doped region width of memristor and the undoped peak width ratio of memristor；Speed is multiplied by into electric current to flow every time
Time through memristor, obtain the current width of the doped region of memristor；According to the current width of the doped region of memristor
And electric current, determine the voltage of memristor and the relational expression of electric current.By in memristor electric current moved from doped region to undoped region
Dynamic speed vDOne f (y) of middle increase, is obtainedF (y)=1- (y-stp (- i))2p,
Wherein,I is the value for the sense of current for flowing through memristor, and y characterizes default time and memristor thickness
Corresponding relation between ratio；In the voltage of memristor and the relational expression V (t) of electric current obtained from, V (t) flows every time with electric current
The thickness proportion that the doped region of time t and memristor through memristor move to undoped region has relation.So as in electric current stream
When having arrived the doped region border or undoped region border of memristor, the voltage of memristor, which is calculated, to undergo mutation,
It is easy to when memristor is applied in the devices such as memory, goes to locate memory etc. using the magnitude of voltage of memristor
Reason.
Fig. 7 is the structural representation for the terminal device that the embodiment of the present invention five provides, as shown in fig. 7, the terminal device can
Include for performing the action of device or step, the equipment in Fig. 1-embodiment illustrated in fig. 4：Memory 71, processor 72, connect
Receive device 73 and transmitter 74.
Memory 71, for storing the executable instruction of processor 72 and program；
Processor 72, for according to corresponding relation between default time and memristor thickness proportion, and flow through memristor
The electric current of device, the speed that electric current moves from the doped region of memristor to the undoped region of memristor is obtained, wherein, memristor
Thickness proportion is the doped region width of memristor and the undoped peak width ratio of memristor；Speed is multiplied by the time, obtained
To the current width of the doped region of memristor；By the current width of the doped region of memristor, electric current, default public affairs are brought into
In formula, the voltage of memristor and the relational expression of electric current are obtained.
In a kind of optional embodiment, processor 72, specifically for according to default time and memristor thickness ratio
Corresponding relation y between example, establishes first function relation f (y)=1- (y-stp (- i))2p, wherein,i
To flow through the value of the sense of current of memristor, p is constant, and p is positive integer；
First function relation f (y) is multiplied by electric current i (t), obtains electric current from the doped region of memristor to the non-of memristor
The speed of doped region movementWherein, when memristor is applied in forward voltage, η value is 1,
When memristor is applied in backward voltage, η value is -1, μv=3 × 10-8m2/ s/V, RONWhen for memristor being entirely doped region
Resistance value, D is the thickness of memristor, and i (t) is the electric current for flowing through memristor that detects in real time, and t is the time.
In a kind of optional embodiment, current width W (t)=v*t of the doped region of memristor；The electricity of memristor
Pressure and the relational expression of electric current areWherein, ROFFIt is entirely non-mix for memristor
Resistance value during miscellaneous region.
In a kind of optional embodiment, processor 72, be additionally operable to by the current width of the doped region of memristor,
Electric current, it is brought into default formula, it is real-time really according to relational expression after obtaining the voltage of memristor and the relational expression of electric current
Determine the current voltage of memristor；According to the current voltage of memristor, calculating processing is carried out to memristor.
The terminal device of embodiment illustrated in fig. 7 can be used for the technical scheme of embodiment of the method shown in above-mentioned Fig. 1-Fig. 4, or
Person performs the program of Fig. 5-embodiment illustrated in fig. 6 modules, and its implementing principle and technical effect is similar, and here is omitted.
In embodiments of the present invention, mutually it can refer to and use for reference between the various embodiments described above, same or similar step and noun
No longer repeat one by one.
Receiver 73, transmitter 74 can be connected with antenna.The memory 71 realizes above method embodiment for storage,
Or the program of embodiment illustrated in fig. 7 modules, processor 72 call the program, perform the operation of above method embodiment,
To realize the modules shown in Fig. 7.
Or above modules can also partly or entirely be embedded in this with equipment by the form of integrated circuit
Realized on some chip.And they can be implemented separately, can also integrate.I.e. the above module can by with
The one or more integrated circuits for implementing above method are set to, such as：One or more specific integrated circuit (Application
Specific Integrated Circuit, abbreviation ASIC), or, one or more microprocessors (Digital Signal
Processor, abbreviation DSP), or, one or more field programmable gate array (Field Programmable Gate
Array, abbreviation FPGA) etc..
The present embodiment is by according to corresponding relation between default time and memristor thickness proportion, and flows through memristor
Electric current, determine the speed that undoped region of the electric current from the doped region of memristor to memristor is moved, wherein, memristor is thick
Degree ratio is the doped region width of memristor and the undoped peak width ratio of memristor；It is every according to speed and electric current
The secondary time for flowing through memristor, determine the current width of the doped region of memristor；According to the current of the doped region of memristor
Width and electric current, determine the voltage of memristor and the relational expression of electric current.By in memristor electric current from doped region to undoped
Increase corresponding relation between a default time and memristor thickness proportion, the memristor obtained from the speed of area's movement
Voltage and electric current relational expression in, it is relevant with the thickness proportion that the doped region of time and memristor moves to undoped region
System.So as to which when electric current has flowed to the doped region border or undoped region border of memristor, the electricity of memristor be calculated
Pressure will not undergo mutation, and be easy to when memristor is applied in the devices such as memory, go using the magnitude of voltage of memristor
Memory etc. is handled.
One of ordinary skill in the art will appreciate that：Realizing all or part of step of above-mentioned each method embodiment can lead to
The related hardware of programmed instruction is crossed to complete.Foregoing program can be stored in a computer read/write memory medium.The journey
Sequence upon execution, execution the step of including above-mentioned each method embodiment；And foregoing storage medium includes：ROM, RAM, magnetic disc or
Person's CD etc. is various can be with the medium of store program codes.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：It still may be used
To be modified to the technical scheme described in foregoing embodiments, or equivalent substitution is carried out to which part technical characteristic；
And these modification or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. a kind of determination method of memristor voltage and current relationship, it is characterised in that including：
According to corresponding relation between default time and memristor thickness proportion, and the electric current of memristor is flowed through, determine electric current
The speed moved from the doped region of memristor to the undoped region of memristor, wherein, the memristor thickness proportion is to recall
Hinder the doped region width of device and the undoped peak width ratio of memristor；
Flow through the time of the memristor every time according to the speed and electric current, determine the doped region of the memristor
Current width；
According to the current width of the doped region of the memristor and the electric current, the voltage of memristor and the relation of electric current are determined
Formula.
2. according to the method for claim 1, it is characterised in that it is described according to default time and memristor thickness proportion it
Between corresponding relation, and flow through the electric current of memristor, determine undoped region of the electric current from the doped region of memristor to memristor
The speed of domain movement, including：
According to corresponding relation y between default time and memristor thickness proportion, first function relation f (y)=1- (y- are established
stp(-i))2p, wherein,I expressions flow through the value of the sense of current of memristor, and p represents constant, and p is
Positive integer；
The first function relation f (y) is multiplied by electric current i (t), obtains electric current from the doped region of memristor to the non-of memristor
The speed of doped region movementWherein, when the memristor is applied in forward voltage η value
For 1, when the memristor is applied in backward voltage, η value is -1, μv=3 × 10-8m2/ s/V, RONRepresent that the memristor is complete
Resistance value during doped region is all, D represents the thickness of memristor, and i (t) represents the electricity for flowing through memristor detected in real time
Stream, t represent that electric current flows through the time of the memristor every time.
3. according to the method for claim 2, it is characterised in that the current width W (t) of the doped region of the memristor=
v*t；
The voltage of the memristor and the relational expression of electric current areWherein, ROFF
Represent the resistance value when memristor is entirely undoped region.
4. according to any described methods of claim 1-3, it is characterised in that in the doped region according to the memristor
Current width and the electric current, after determining the voltage of memristor and the relational expression of electric current, in addition to：
According to the relational expression, the current voltage of the memristor is determined in real time；
According to the current voltage of the memristor, calculating processing is carried out to the memristor.
A kind of 5. determining device of memristor voltage and current relationship, it is characterised in that including：
First computing module, for according to corresponding relation between default time and memristor thickness proportion, and flow through memristor
The electric current of device, the speed that electric current moves from the doped region of memristor to the undoped region of memristor is determined, wherein, it is described to recall
Device thickness proportion is hindered for the doped region width of memristor and the undoped peak width ratio of memristor；
Second computing module, for flowing through the time of the memristor every time according to the speed and electric current, it is determined that described recall
Hinder the current width of the doped region of device；
First determining module, current width and the electric current for the doped region according to memristor, determine the electricity of memristor
Pressure and the relational expression of electric current.
6. device according to claim 5, it is characterised in that first computing module, including：
Setting up submodule, for according to corresponding relation y between default time and memristor thickness proportion, establishing first function pass
It is f (y)=1- (y-stp (- i))2p, wherein,I expressions flow through the value of the sense of current of memristor,
P represents constant, and p is positive integer；
Calculating sub module, for the first function relation f (y) to be multiplied by into electric current i (t), obtain doping of the electric current from memristor
The speed that region is moved to the undoped region of memristorWherein, it is applied in the memristor
η value is 1 during forward voltage, and when the memristor is applied in backward voltage, η value is -1, μv=3 × 10-8m2/ s/V, RON
The resistance value when memristor is entirely doped region is represented, D represents the thickness of memristor, and i (t) represents what is detected in real time
The electric current of memristor is flowed through, t represents that electric current flows through the time of the memristor every time.
7. device according to claim 6, it is characterised in that the current width W (t) of the doped region of the memristor=
v*t；
The voltage of the memristor and the relational expression of electric current areWherein, ROFF
Represent the resistance value when memristor is entirely undoped region.
8. according to any described devices of claim 5-7, it is characterised in that described device, in addition to：
Second determining module, in current width of first determining module according to the doped region of the memristor and institute
Electric current is stated, after determining the voltage of memristor and the relational expression of electric current, according to the relational expression, determines the memristor in real time
Current voltage.
9. device according to claim 8, it is characterised in that described device, in addition to：
Processing module, after determining the current voltage of the memristor in second determining module, according to the memristor
The current voltage of device, calculating processing is carried out to the memristor.
10. a kind of terminal device, including：Memory and processor；
Wherein, the memory, the instruction executable for storing the processor；The processor, will for perform claim
Seek the method described in any one of 1-4.
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