CN107731649A - A kind of device of multifunctional semiconductor doping - Google Patents
A kind of device of multifunctional semiconductor doping Download PDFInfo
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- CN107731649A CN107731649A CN201710991602.1A CN201710991602A CN107731649A CN 107731649 A CN107731649 A CN 107731649A CN 201710991602 A CN201710991602 A CN 201710991602A CN 107731649 A CN107731649 A CN 107731649A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
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Abstract
The invention discloses a kind of multifunctional semiconductor doper, compatible plasma excitation non high temperature diffusing, doping and plasma immersion and ion implantation adulterate two kinds of functions.The device sets plasma generating unit and plasmon coupling window at the top of vacuum chamber, is the parallel-plate plasma chamber being made up of upper and lower plates under window, sets moveable middle plate therebetween；The exposed surface deposition doped impurity layer of three plates；Vacuum chamber inner surface and rack surface covering double layer innerliner material, internal layer are insulating barrier, and outer layer is releasing pollution layer, and the connection of releasing pollution layer provides the DC low-voltage source of positive bias；Middle plate connection provides the DC high voltage source of back bias voltage, and lower plate is ground potential.When being diffused doping, when plate in removal, treating that doped semiconductor is placed in lower plate, and carrying out ion implantation doping, plate in immigration, treat that doped semiconductor is placed on middle plate.The device not only reduces the contamination of undoped impurity to greatest extent, moreover it is possible to flexibly realizes the exchange of two kinds of doping functions.
Description
Technical field
The present invention relates to semiconductor doping device, and in particular to a kind of compatible plasma excitation non high temperature diffusing, doping and
The device of plasma immersion and ion implantation doping, so-called non high temperature refer to 0-300 DEG C.
Background technology
Doping process is incorporated into required impurity in the near surface specific region of semi-conducting material or device, reaches one
Fixed surface concentration and depth, so as to change the physical and chemical properties of semi-conducting material or device.Semiconductor can be inorganic
Semiconductor or organic semiconductor or hybrid inorganic-organic semiconductor.Using doping process, PN junction, field effect can be made
The source-drain area of transistor is answered, can also significantly improve Ohmic contact between metal/semiconductor.The impurity for mixing semiconductor is main
There are three classes：The first kind be can determine conduction type and provide carrier shallow acceptor impurities or donor impurity (B, P in such as Si,
As etc.)；Second class has been the deep-level impurity (Au, Pt, Cr in such as Si) of complex centre and compensating action；3rd class is to change
Become the impurity of its specific physical property, such as it ferroelectricity or ferromagnetism is occurred.
Currently used semiconductor doping technique mainly has two kinds, i.e. High temperature diffusion and ion implanting.High temperature diffusion is that have
The doping process of nearly 80 years history, and use till today.And ion implanting be grow up the 1960s one kind very
Many-side is better than the doping process of High temperature diffusion, is most widely used main flow doping process.But after ion implantation, in order to
Recover the lattice damaged by energetic ion, it is necessary to which carrying out high annealing restores lattice.Therefore, both technologies are directed to height
Warm handling process, institute must high temperature up to seven or eight hundred or even more than 1,000 degrees Celsius, but high-temperature process is particularly to many semi-conducting materials
Semiconductor devices has harm even destruction, if semi-conducting material or device not resistant against high temperatures, above-mentioned doping process is just
It can not often apply.
Into the eighties, a kind of new ion injection method is referred to as plasma immersion and ion implantation (Plasma
Immersion Ion Implantation) it is developed, it is applied in terms of metal, semiconductor.Plasma immersion
Ion injection method in use, to be placed in plasma except being incorporated sample, also to apply on sample is incorporated hundreds of volts or
Higher radio-frequency bias voltage, exactly using this high voltage, the cation in plasma is injected into by doped semiconductor material
In.Cation injection can cause a large amount of defects in by doped semiconductor material.Further, since the ion concentration in plasma
Often very high, plasma immersion and ion implantation often causes amorphous layer in semiconductor crystalline material is incorporated.It is above-mentioned to eliminate
Defect and amorphous layer, it is necessary to use high annealing.Further, since be loaded with high bias voltage on doped semiconductor material, wait from
One shortcoming of daughter immersion ion injection is that have obvious corrasion to being incorporated semiconductor material surface.
A large amount of nano semiconductor materials and two-dimensional material are emerged in recent years, and semiconductor devices develops to nanoscale, had
Machine semiconductor and hybrid inorganic-organic semiconductor and device there has also been rapid progress, destruction of the high temperature to these materials and device
Effect, greatly limit the doping process for being related to high-temperature process.In view of the demand, the present inventor proposes that plasma swashs before this
Room temperature diffusing, doping method living, and successfully tri- kinds of semiconductors of Si, GaN and GaAs have been carried out for it is a variety of treat it is doping
Plasma activates room temperature diffusion experiment (number of patent application CN201610412679.4 and CN201610420343.2 and paper
Appl.Phys.A(2017)123:393 and Appl.Phys.A (2016) 122:1013) and devise and a set of be applied to this side
Plasma excitation diffusion doping apparatus (the number of patent application of method：CN201710093637.3).But current plasma dress
The pollution of undoped impurity in the diffusing, doping that plasma can not be avoided to activate is put, also can not the compatible non-height of plasma excitation
Warm diffusing, doping and plasma immersion and ion implantation doping.The present invention is to propose a kind of device, and its compatible plasma of energy swashs
Encourage non high temperature diffusing, doping and plasma immersion and ion implantation doping, it is convenient to mix from the diffusion of plasma excitation non high temperature
It is miscellaneous to be transformed into plasma immersion and ion implantation doping, or in turn.In addition, present invention additionally contemplates that, in plasma immersion
During ion implantation doping, the temperature rise of semiconductor samples is not so high in order to avoid damaging sample, temperature pair is only required to the temperature control of sample
Doping concentration and depth do not have a significant impact, and in temperature control requirement of the plasma excitation non high temperature diffusing, doping to sample
It is very high, because temperature directly affects the concentration and depth of impurity.
The content of the invention
It is an object of the invention to provide a kind of compatible plasma excitation non high temperature diffusing, doping and plasma immersion
Ion implantation doping function, the pollution of undoped impurity in implantation equipment, and simple in construction, cost can be reduced to greatest extent
Cheap device, the device can conveniently realize plasma excitation non high temperature diffusing, doping and plasma immersion ion note
Enter the mutual conversion of two kinds of functions of doping.In addition, present invention additionally contemplates that, carrying out plasma immersion and ion implantation doping
When, it is too high in order to avoid damage sample to only require that the temperature of semiconductor samples not rise to the temperature control of sample, temperature to doping concentration and
Depth does not have a significant impact, and requires very high to the temperature control of sample in plasma excitation non high temperature diffusing, doping, because
The concentration and depth of impurity are directly affected for temperature.
To realize above-mentioned technical purpose, the present invention adopts the following technical scheme that：
A kind of multifunctional semiconductor doper, compatible plasma excitation non high temperature diffusing, doping and plasma immersion
Ion implantation doping function, including vacuum chamber, plasma generating unit, supporting table, the DC low-voltage that positive bias is provided
Source and the DC high voltage source that back bias voltage is provided, it is characterised in that plasmon coupling window is provided with the top of vacuum chamber,
The plasma generating unit is located above plasmon coupling window；In vacuum chamber, plasmon coupling window and
Parallel-plate plasma chamber is provided between supporting table, the parallel-plate plasma chamber is made up of the upper plate and lower plate being parallel to each other,
Wherein：Upper plate is close to plasmon coupling window, and lower plate is located in supporting table；In being provided with movably between the upper and lower plates
Plate, the area of the middle plate are less than upper and lower plate, by a moveable dielectric support above lower plate；Upper plate, middle plate and under
The surface that plate is exposed in vacuum chamber has deposited doped impurity layer, and the connection of middle plate provides the DC high voltage of back bias voltage
Source；The supporting table includes the hollow box of liftable support and its top, is electrically insulated between the hollow box and liftable support,
Lower plate is placed in hollow box, lower plate and hollow box be (zero) current potential；It is full of inside the hollow box permanent by liquid circulation
Temperature controller controls the circulating liquid of temperature；The table that the inner surface and liftable support of vacuum chamber are exposed in vacuum chamber
Face is all covered with double layer innerliner material, and its outer layer is releasing pollution layer, and internal layer is insulating barrier；Vacuum chamber inner surface and liftable branch
The releasing pollution layer on frame surface is connected with providing the DC low-voltage source of positive bias, and is insulated with the cavity wall of vacuum chamber；Hollow box
Exposed surface is separated covered with releasing pollution layer between liftable support by insulating barrier；The material of the releasing pollution layer is
Metal (such as tantalum) or conductive non-metals, diffusing, doping is difficult under action of plasma into semi-conducting material or device.
The semiconductor doping device of the present invention compatible plasma excitation non high temperature diffusing, doping and plasma immersion
Ion implantation doping function, middle plate and insulator below may move, when carrying out plasma immersion and ion implantation doping,
Plate and insulator in being introduced between the upper and lower plates of parallel-plate plasma chamber, it is incorporated semiconductor samples and is placed in above middle plate, in
Plate is by the less dielectric support of the area being placed in lower plate, if for example, middle plate is circular slab, insulator is that diameter is bright
Show less concentric plectane.When carrying out plasma excitation non high temperature diffusing, doping, middle plate and insulator are removed, half will be incorporated
Conductor sample is placed in above lower plate.
In above-mentioned semiconductor doping device, the material of the hollow box and liftable support is usually metal.It is described hollow
Box and liftable support both play a part of supporting parallel-plate chamber lower plate, play the work of two plate spacing above and below regulation parallel-plate chamber again
With can also play and carry out temperature controlled effect to be doped semi-conducting material or the device that are placed in parallel-plate chamber.It is excellent
Choosing, the spacing adjustable extent of the parallel-plate plasma chamber upper and lower plates is 3mm~80mm.
Temperature control circulating liquid in hollow box can ensure to be entrained in non high temperature (a certain specified temp between 0-300 DEG C, precision ±
1 DEG C) under carry out.The circulating liquid controls temperature, circulating liquid choosing by the liquid circulation radiator valve outside vacuum chamber
The liquid all good used in temperature-control range (0-300 DEG C) internal stability and mobility, such as silicone oil.Meanwhile the doper is also set
There is the temperature sensor of monitoring parallel-plate chamber lower plate temperatures.The temperature sensor can be under thermoelectric couple, with parallel-plate chamber
Plate connects close to the position at middle part.To improve the temperature-responsive speed of lower plate, auxiliary heating and/or refrigeration unit can also be increased
It is heated and/or freezed.
The surface that the upper and lower plate and middle plate of parallel-plate plasma chamber are exposed all deposited doped impurity layer, and it is played
The effect of impurity source, while also prevent the contamination caused by the substrate atom effusion of upper, middle and lower plate.For upper plate, deposition
The thickness of doped impurity layer is 30~100nm, preferably 50~80nm；For lower plate, the thickness of the doped impurity layer of deposition is
50~500nm, preferably 80~150nm.For middle plate, the thickness of the doped impurity layer of deposition is 30-100nm, preferably 50-
80nm。
In the multifunctional semiconductor doper of the present invention, the plasmon coupling window preferably uses high purity quartz system
Form.The vacuum chamber is additionally provided with working gas air inlet and vacuum pumping opening.
Preferably, the thickness of the insulating barrier in the double layer innerliner material is 1~2mm, the thickness of releasing pollution layer for 300~
600nm.The DC low-voltage source applies 10-100V's to vacuum chamber inner surface and the releasing pollution layer on liftable support surface
Positive bias.And realized and be electrically insulated by insulating barrier between the releasing pollution layer on hollow box surface and foregoing releasing pollution layer, hollow box is with
Plate is connected, and is all zero-bias.
The non high temperature diffusion that using the device of the present invention various semi-conducting materials or device are carried out with plasma excitation is mixed
When miscellaneous, specific method is as follows：Semi-conducting material or device to be adulterated are placed in the lower plate of parallel-plate plasma chamber, generally
It is centrally located；Lower plate height is adjusted by liftable support, sets suitable parallel-plate plasma chamber upper and lower plates spacing；
Circulating liquid temperature in hollow box is controlled by liquid circulation radiator valve, makes to treat the lower plate position immediately below doped semiconductor
Temperature between 0-300 DEG C a certain design temperature；By DC low-voltage source to vacuum chamber inner surface and liftable support table
The releasing pollution layer in face applies positive bias；Inert gas is passed through after being vacuumized to vacuum chamber, by plasma generating unit and
Plasmon coupling window forms plasma, is realized under plasma excitation and treats the non-of doped semiconductor materials or device
High temperature diffusion is adulterated.
When carrying out plasma immersion and ion implantation doping to various semi-conducting materials or device using the device of the present invention,
Specific method is as follows：The insulator of plate and plate in support in being moved into parallel-plate plasma chamber, by semiconductor to be adulterated
Material or device are placed on middle plate, generally centrally located position；Lower plate height is adjusted by liftable support, during setting is suitable
The spacing of plate and upper plate；Circulating liquid temperature in hollow box is controlled by liquid circulation radiator valve, makes the temperature of lower plate
Less than 300 DEG C；Positively biased is applied to vacuum chamber inner surface and the releasing pollution layer on liftable support surface by DC low-voltage source
Pressure；Back bias voltage is applied by the high power supply centering plate of direct current；Vacuum chamber is passed through inert gas after vacuumizing, and is sent out by plasma
Raw unit and plasmon coupling window form plasma in vacuum chamber, and doped semiconductor materials or device are treated in realization
Plasma immersion and ion implantation doping.Preferably, the DC high voltage source centering plate applies 10~3000V negative bias
Pressure.
The multifunctional semiconductor doper of the present invention has following several features：
1st, parallel-plate plasma chamber is made up of two plates up and down parallel to each other.Two plate spacing are adjustable, and two plates are usually to justify
Shape is square, the spacing of two plates when its dimension is significantly greater than actual doping.
2nd, to carry out plasma immersion and ion implantation doping, plate in being introduced between upper and lower two plate, the area of middle plate is small
In upper plate or lower plate, the immediately significantly smaller insulator of area below middle plate.Middle plate-insulator may move, and be soaked in plasma
When not having ion implantation doping, middle plate and insulator are placed on parallel-plate plasma chamber center, treat that doped semiconductor sample is placed in
On middle plate, middle plate is connected with DC high voltage source.When carrying out the non high temperature diffusing, doping of plasma excitation, middle plate is removed
And insulator, treat that doped semiconductor sample is placed on lower plate.
3rd, the upper plate for forming parallel-plate plasma chamber is to deposit to mix on the downward one side (including edge) of flat substrate
Miscellaneous impurity layer forms, and lower plate and middle plate are all to deposit doped impurity layer on the two sides of flat substrate and edge.Substrate is smooth
Semiconductor chip, such as silicon chip.It is required that the doped impurity layer of deposition is fine and close, substrate can not be exposed.The plate table of upper, middle and lower three
The impurity layer of face deposition, can not only serve as impurity source, can also stop the wherein effusion of atom and cause contamination.
4th, impurity can be metal or nonmetallic.If nonmetallic, conductor or semiconductor should be selected.
5th, the substrate material for forming three plates and the common standard for the selection for depositing doped impurity layer thickness are：Radio frequency input energy
The plasma that density and temperature are suitable for is formed in parallel-plate plasma chamber；And under parallel-plate plasma chamber
Side, due to the presence of plate, radio frequency is consumed, and the density and temperature of plasma have all been decreased obviously, it is impossible to or seldom can be by gold
The atomic collision of category or insulator surface comes out, so as to reach the purpose for reducing contamination as far as possible.For example, if impurity is gold
Category, then the doping metals impurity layer on upper plate substrate can not be too thick, such as<60nm, otherwise radio frequency can be in doping metals impurity layer
In cause big vortex；In addition, the resistivity of substrate can not be low, such as>50 Ω cm, in order to avoid influence plasma in parallel-plate chamber
The formation of body.If impurity is nonmetallic, substrate resistance rate should be selected relatively low, such as≤1 Ω cm, make the presence of plate, it is right
Radio frequency has enough attenuations.From resistivity and the optional scope of diameter is all big and cheap etc., factor considers, usual silicon
The candidate for the substrate material that piece has been.
6th, it is close to hollow box below lower plate.In order to which preferably temperature control, the upper surface area of generally hollow box only compare lower plate
It is smaller.Hollow box is connected with liquid circulation channel, and circulating liquid is selected in temperature-control range (0-300 DEG C) internal stability and mobility
All good liquid, such as silicone oil.To improve the temperature-responsive speed of sample stage, auxiliary heating can also be increased and/or refrigeration is single
Member is heated and/or freezed to sample stage.
7th, separated between hollow box and liftable support below with insulating barrier.
8th, releasing pollution layer (parallel-plate plasma is all covered with the surface of vacuum contact outside in vacuum chamber
In the upper, middle and lower plate of chamber and support except the insulator and the insulating barrier of electric isolution hollow box and liftable support of plate).
Under action of plasma, the ion of releasing pollution layer seldom can enter plasma；And in vacuum chamber inner surface and liftable branch
Apply 10-100V positive bias on the releasing pollution layer on frame surface, reduce further cation in plasma and they are banged
Hit.
9th, because being close to radio frequency input window, in parallel-plate plasma chamber, particularly intermediate portion, plasma density
It is much higher with temperature places other compared with vacuum chamber, it will treat that doped semiconductor materials or device are placed on parallel-plate plasma chamber
Plasma density highest place, as shown in figure 1, providing important guarantee for doping and its degree of purity.
10th, when carrying out plasma excitation non high temperature diffusing, doping, the impurity of two plate surfaces above and below parallel-plate chamber
Layer plays impurity source.In the plasma under the shock of cation, the impurity in doped impurity layer enters plasma.Deng
The shock of cation in gas ions is treating doped semiconductor surface introducing defect again, encourages foreign atom non high temperature in plasma
Down doped semiconductor is treated with regard to that can diffuse into.Adjust plasma input power, parallel-plate plasma chamber upper and lower plates spacing and work
The surface concentration and depth of doping can be changed by making species and pressure of gas etc..In order to ensure that doping reaches the concentration of requirement
And depth, select to carry out under suitable steady temperature in the warm area of non high temperature (being less than 300 DEG C).
11st, when carrying out plasma immersion and ion implantation doping, the doped impurity layer of upper and lower plates and middle plate surface all rises
The effect of impurity source.Under the shock of cation in the plasma, the impurity in doped impurity layer enters plasma.Due to
Upper plate is ground (zero) current potential, and middle plate is the negative potential of 10-3000 volts, on this, in the presence of two plate potential differences, impurity
Ion is injected into the semiconductor samples on middle plate.Plasma input power is adjusted, negative potential and work on middle plate
Species and pressure of gas etc. can change the surface concentration and depth of doping.To ensure to be doped semiconductor not by high temperature
Infringement, control are doped conductor temperature less than 300 DEG C.
Multifunctional semiconductor doper proposed by the present invention, compared with other plasma devices, major advantage is can
Easily realize that plasma excitation non high temperature diffusing, doping and plasma immersion and ion implantation adulterate two kinds of the mutual of function and turned
Change, and apparatus structure is simple, cost is cheap, reduce that undoped impurity treats doped semiconductor material or device is made to greatest extent
Into contamination, the degree of purity of doping is substantially increased, and ensure that doping can be carried out in non high temperature environment, suitable for various solids
The doping of material particularly semi-conducting material and the semiconductor devices of part completion.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the multifunctional semiconductor doper of the embodiment of the present invention, wherein：1- plasmas
Body generating unit, 2- plasmon coupling windows, 3- treat doped semiconductor materials or device, 4- insulators, 4 '-hollow box with can
Insulating barrier between lifting support, 5- hollow box (are full of temperature control liquid), and 6- DC low-voltages source (provides 10-100V positively biaseds
Pressure), 7- liftable supports, 8- thermoelectric couples, 9- liquid circulation radiator valves, the upper plate of 10- parallel-plate plasma chambers,
Plate during 11- is removable, the lower plate of 12- parallel-plate plasma chambers, 13- vacuum chambers, 14- connect the pipeline of vacuum system, and 15- is double
Layer inner lining material (outer layer is the tantalum layer of soil resistant, and internal layer is insulating barrier), 16- connects the pipeline of working gas, 17- DC high voltages
Source (provides 10-3000V back bias voltages).
Embodiment
Below in conjunction with the accompanying drawings, the present invention is further described by embodiment.
As shown in figure 1, the multi-functional doper includes：Vacuum chamber 13, the plasma positioned at the top of vacuum chamber 13
Body couples window 2, the plasma generating unit 1 above plasmon coupling window 2.Parallel-plate plasma chamber it is upper
Plate 10 is the upper substrate that lower surface and edge are coated with impurity sedimentary, and plasmon coupling window 2 is close in top；Lower plate 12
It is the subtegulum that surface is coated with impurity sedimentary, is placed in hollow box 5.Middle plate 11 in parallel-plate plasma chamber is
It may move into or out, be supported on by moveable insulator 4 above lower plate.Hollow box 5 is located on liftable support 7, the two
It is electrically isolated by insulating barrier 4 '.The inside of hollow box 5 is full of temperature control liquid, by the controller temperature of liquid circulation radiator valve 90
℃-300℃.The exposed surface of the inner surface of vacuum chamber 13 and liftable support 7 covers double layer innerliner material, and outer layer is soil resistant
Tantalum layer, internal layer is insulating barrier, and tantalum layer therein connection provides the DC low-voltage source 6 of positive bias.The temperature of lower plate 12 is by temperature
Poor galvanic couple 8 detects.The middle connection of plate 11 provides the DC high voltage source 17 of back bias voltage.There is vacuum chamber 13 pipeline 16 to connect work gas
Body, pipeline 14 connect vacuum system.
When carrying out plasma excitation non high temperature diffusing, doping, middle plate 11 and insulator 4 are removed, treat doped semiconductor
Material or device 3 are placed on the center of lower plate 12；Upper and lower plates spacing is set to be adjusted to 3mm-80mm a certain spy by liftable support 7
Definite value；Liquid circulation radiator valve 9 controls a setting of the circulating liquid temperature in hollow box 5 between 0 DEG C -300 DEG C
Value；DC low-voltage source 6 applies 10-100V positive biases on the tantalum layer of vacuum chamber inner surface；After vacuum chamber 13 vacuumizes,
Pipeline 16 by connecing working gas is passed through the one or more in the inert gases such as 1-100sccm He, Ar, controls vacuum chamber
The pressure of room 13 is the designated value in the range of 0.01-10Pa；Through excitation coil, (exciting power is set in 13.56MHz rf waves
Between 5W-1000W) plasma is formed in vacuum chamber 13, realize the plasma for treating doped semiconductor materials or device 3
The non high temperature diffusing, doping of body excitation.
When carrying out plasma immersion and ion implantation doping, plate 11 and insulator 4, treat doped semiconductor materials in immigration
Or device 3 is placed on the middle center of plate 11；It is a certain specific of 3mm-80mm to adjust upper plate and middle plate spacing by liftable support 7
Value；Liquid circulation radiator valve 9 controls a setting value of the circulating liquid temperature between 0 DEG C -300 DEG C in hollow box 5；
DC low-voltage source 6 applies 10-100V positive biases on the tantalum layer of vacuum chamber inner surface；After vacuum chamber 13 vacuumizes, lead to
Cross and connect the pipeline 16 of working gas and be passed through one or more in the inert gases such as 1-100sccm He, Ar, control vacuum chamber
13 pressure is the designated value in the range of 0.01-10Pa；Through excitation coil, (exciting power is set in 5W- to 13.56MHz rf waves
Between 1000W) plasma is formed in vacuum chamber 13, and 10-3000V is applied by the centering plate 11 of DC high voltage source 17
Back bias voltage, realize the plasma immersion and ion implantation doping for treating doped semiconductor materials or device 3.
It is finally noted that the purpose for publicizing and implementing example is that help further understands the present invention, but this area
Technical staff be appreciated that：Without departing from the spirit and scope of the invention and the appended claims, it is various to replace and repair
It is all possible for changing.Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope of protection of present invention is to weigh
The scope that sharp claim defines is defined.
Claims (10)
1. a kind of multifunctional semiconductor doper, compatible plasma excitation non high temperature diffusing, doping and plasma immersion from
Son injection doping function, including vacuum chamber, plasma generating unit, supporting table, the DC low-voltage source that positive bias is provided
With the DC high voltage source for providing back bias voltage, it is characterised in that be provided with plasmon coupling window, institute at the top of vacuum chamber
Plasma generating unit is stated to be located above plasmon coupling window；In vacuum chamber, plasmon coupling window and branch
Parallel-plate plasma chamber is provided between support platform, the parallel-plate plasma chamber is made up of the upper plate and lower plate being parallel to each other, its
In：Upper plate is close to plasmon coupling window, and lower plate is located in supporting table；In being provided with movably between the upper and lower plates
Plate, the area of the middle plate are less than upper and lower plate, by a moveable dielectric support above lower plate；Upper plate, middle plate and under
The surface that plate is exposed in vacuum chamber has deposited doped impurity layer, and the connection of middle plate provides the DC high voltage of back bias voltage
Source；The supporting table includes the hollow box of liftable support and its top, is electrically insulated between the hollow box and liftable support,
Lower plate is placed in hollow box, and lower plate and hollow box are ground potential；It is full of inside the hollow box by liquid circulation constant temperature control
The circulating liquid of device control temperature processed；The surface that the inner surface and liftable support of vacuum chamber are exposed in vacuum chamber is equal
Covered with double layer innerliner material, its outer layer is releasing pollution layer, and internal layer is insulating barrier；Vacuum chamber inner surface and liftable support table
The releasing pollution layer in face is connected with providing the DC low-voltage source of positive bias, and is insulated with the cavity wall of vacuum chamber；Hollow box is exposed
Surface covered with releasing pollution layer, but separated between liftable support by insulating barrier；The material of the releasing pollution layer is to wait
It is difficult to diffusing, doping to the metal or conductive non-metals in semi-conducting material or device under gas ions effect.
2. multifunctional semiconductor doper as claimed in claim 1, it is characterised in that the parallel-plate plasma chamber
Upper and lower plates spacing is adjustable in the range of 3mm~80mm.
3. multifunctional semiconductor doper as claimed in claim 1, it is characterised in that upper plate and middle plate surface deposition mix
The thickness of miscellaneous impurity layer is 30~100nm, and the thickness of the doped impurity layer of lower board surface deposition is 50~500nm.
4. multifunctional semiconductor doper as claimed in claim 1, it is characterised in that in the double layer innerliner material, absolutely
The thickness of edge layer is 1~2mm, and the thickness of releasing pollution layer is 300~600nm.
5. multifunctional semiconductor doper as claimed in claim 1, it is characterised in that the device is additionally provided with monitoring parallel-plate
The temperature sensor of plasma chamber lower plate temperatures.
6. multifunctional semiconductor doper as claimed in claim 1, it is characterised in that the DC low-voltage source is vacuum
Chamber inner surface and the releasing pollution layer on liftable support surface provide 10~100V positive bias；During the DC high voltage source is
Plate provides 10~3000V back bias voltage.
7. multifunctional semiconductor doper as claimed in claim 1, it is characterised in that the upper plate is smooth semiconductor
Substrate, one side and marginal deposit have doped impurity layer downwards for it；Middle plate and lower plate are also smooth semiconductor chip, its two sides and
Edge has all deposited doped impurity layer.
8. multifunctional semiconductor doper as claimed in claim 1, it is characterised in that the material of the releasing pollution layer is
Tantalum.
9. plasma excitation non high temperature is carried out to semi-conducting material or device using claim 1~8 any described device
The method of diffusing, doping, including：Plate and its insulator is supported in removal, semi-conducting material or device to be adulterated are placed in flat
In the lower plate of andante plasma chamber；Lower plate height is adjusted by liftable support, sets suitable upper and lower plates spacing；Pass through liquid
Circulating liquid temperature in body circulation radiator valve control hollow box, make the temperature of lower plate is a certain between 0-300 DEG C to set temperature
Degree；Positive bias is applied to vacuum chamber inner surface and the releasing pollution layer on liftable support surface by DC low-voltage source；To true
Plenum chamber is passed through inert gas after vacuumizing, and plasma is formed by plasma generating unit and plasmon coupling window
Body, the non high temperature diffusing, doping for treating doped semiconductor materials or device is realized under plasma excitation.
10. plasma immersion ion note is carried out to semi-conducting material or device using claim 1~8 any described device
Enter the method for doping, including：The insulator of plate and plate in support in being moved into parallel-plate plasma chamber, by be adulterated half
Conductor material or device are placed on middle plate；Lower plate height is adjusted by liftable support, in setting suitably between plate and upper plate
Away from；Circulating liquid temperature in hollow box is controlled by liquid circulation radiator valve, the temperature of lower plate is less than 300 DEG C；It is logical
Cross DC low-voltage source and positive bias is applied to vacuum chamber inner surface and the releasing pollution layer on liftable support surface；Pass through direct current height
Power supply centering plate applies back bias voltage；Vacuum chamber is passed through inert gas after vacuumizing, by plasma generating unit and wait from
Daughter coupling window forms plasma in vacuum chamber, realizes the plasma leaching for treating doped semiconductor materials or device
No ion implantation doping.
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| CN101356625A (en) * | 2006-10-03 | 2009-01-28 | 松下电器产业株式会社 | Plasma doping method and apparatus |
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| US20160126066A1 (en) * | 2014-11-05 | 2016-05-05 | Tokyo Electron Limited | Plasma processing apparatus |
| US20160189963A1 (en) * | 2014-12-25 | 2016-06-30 | Tokyo Electron Limited | Doping method and semiconductor element manufacturing method |
| CN105931951A (en) * | 2016-06-13 | 2016-09-07 | 北京大学 | Method for introducing impurities into gallium arsenide material in room-temperature environment |
| CN106098543A (en) * | 2016-06-13 | 2016-11-09 | 北京大学 | A kind of method introducing solid impurity under room temperature environment in silicon materials |
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| CN101356625A (en) * | 2006-10-03 | 2009-01-28 | 松下电器产业株式会社 | Plasma doping method and apparatus |
| CN102312210A (en) * | 2010-07-05 | 2012-01-11 | 中国科学院微电子研究所 | Plasma immersion ion implantation system |
| US20140238607A1 (en) * | 2013-02-25 | 2014-08-28 | Tokyo Electron Limited | Plasma processing apparatus |
| US20160111270A1 (en) * | 2013-06-17 | 2016-04-21 | Horiba Jobin Yvon Sas | Glow discharge mass spectrometry method and device |
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