CN107610604A - A kind of LED chip, array base palte, display panel and display device - Google Patents

A kind of LED chip, array base palte, display panel and display device Download PDF

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Publication number
CN107610604A
CN107610604A CN201710873131.4A CN201710873131A CN107610604A CN 107610604 A CN107610604 A CN 107610604A CN 201710873131 A CN201710873131 A CN 201710873131A CN 107610604 A CN107610604 A CN 107610604A
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CN
China
Prior art keywords
led chip
pn
semiconductor layer
type semiconductor
characterised
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CN201710873131.4A
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Chinese (zh)
Inventor
张义荣
孙忠祥
张君
邬剑波
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上海九山电子科技有限公司
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Priority to CN201710873131.4A priority Critical patent/CN107610604A/en
Publication of CN107610604A publication Critical patent/CN107610604A/en

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Abstract

The invention discloses a kind of LED chip, array base palte, display panel and display device.A kind of LED chip, including:Substrate, the substrate include the first face and second face relative with first face;PN ray structures, on first face of the substrate;On-off circuit, on second face of the substrate, the on-off circuit electrically connects with storage capacitance and the PN ray structures, is charged when the on-off circuit is opened for storage capacitance;Storage capacitance, including at least the first capacitance electrode and the second capacitance electrode, for providing constant light emitting electric current for the PN ray structures.The present invention provides constant glow current for PN ray structures by the storage capacitance in LED chip structure so that the current value by each LED is equal, so as to realize that the luminosity of each LED chip is uniform.

Description

A kind of LED chip, array base palte, display panel and display device

Technical field

The present embodiments relate to technical field of LED display, more particularly to a kind of LED chip, array base palte, display panel And display device.

Background technology

LED (Light Emitting Diode, light emitting diode) is one kind of semiconductor diode, is a kind of rely on partly The luminous photoelectric cell of the unilateral conduction of conductor PN junction, LED is widely used illuminating lamp on current worldwide market Tool, has a small volume, and brightness is high, and power consumption is low, and heating is few, service life length, it is environmentally friendly the advantages that, and have colourful Color category, it is well received by consumers.At the same time, LED chip needs display screen as backlight in mobile phone, television set etc. Electronic product in play indispensable effect, with the continuous diminution of the size of electronic product, also require LED chip Size can significantly reduce.

The Micro LED structures of active drive are all in traditional thin film transistor (TFT) (Thin Film at present Transistor, TFT) do tft array circuit on substrate, then LED be transferred to corresponding in pixel cell.Because LED is Electric current drives, and the size of electric current directly affects LED brightness, in order to ensure that the luminosity of pixel cell is uniform, then by every Individual LED current value must be equal.In the prior art in order to ensure that the electric current in LED array by each LED is equal, pass through The methods of changing circuit resistance makes up the current difference by different LED, but in the high-resolution display panel of large scale In, the problem of LED luminance is uneven is still had using the above method.

The content of the invention

The present invention provides a kind of LED chip, array base palte, display panel and display device, to realize the hair of LED chips Brightness is uniform.

For up to this purpose, in a first aspect, the embodiments of the invention provide a kind of LED chip, the LED chip includes:

Substrate, the substrate include the first face and second face relative with first face;

PN ray structures, on first face of the substrate;

On-off circuit, on second face of the substrate, the on-off circuit is sent out with storage capacitance and the PN Photo structure electrically connects, and is charged when the on-off circuit is opened for storage capacitance;

Storage capacitance, including at least the first capacitance electrode and the second capacitance electrode, for being provided for the PN ray structures Constant light emitting electric current.

Alternatively, the PN ray structures include the n type semiconductor layer and p type semiconductor layer stacked gradually, and are formed Composite bed between the n type semiconductor layer and the p type semiconductor layer.

Alternatively, the material of main part of the PN ray structures is GaN.

Alternatively, the PN ray structures are formed using Metalorganic chemical vapor deposition technique.

Alternatively, the on-off circuit comprises at least a thin film transistor (TFT).

Alternatively, the thin film transistor (TFT) includes being formed at grid on second face of the substrate, positioned at described The first insulating barrier of substrate and the grid away from the PN ray structures side, positioned at first insulating barrier away from the lining The semiconductor layer of bottom side and the source electrode positioned at the semiconductor layer both ends and drain electrode, wherein, the drain electrode and the p-type half Conductor layer electrically connects.

Alternatively, first capacitance electrode is formed at the p type semiconductor layer away from the n type semiconductor layer side Surface, first electric capacity is electrically connected to the drain electrode by the first conduction material, and first conduction material is partly led with the N-type Body layer insulate.

Alternatively, it is filled between the drain electrode and first electric capacity formed with first through hole, first conduction material In the first through hole, and formed with the second insulating barrier between first conduction material and the first through hole;

Or first conduction material is formed at the side of the LED chip, and first conduction material and the LED Formed with the 3rd insulating barrier between the side wall of chip.

Alternatively, second capacitance electrode is set with the grid with layer, and second capacitance electrode passes through the lining The second through hole in bottom electrically connects with the n type semiconductor layer.

Alternatively, the p type semiconductor layer etching is fluted, to expose the n type semiconductor layer.

Second aspect, the embodiment of the present invention additionally provide a kind of array base palte, and the array base palte includes multi-strip scanning line, more The LED chip that data line, a plurality of common wire and any embodiment of the present invention provide;

The scan line and the common wire, intersect with data wire insulation and limit pixel region, the LED core Piece is arranged in the pixel region, and the scan line electrically connects the control terminal of the on-off circuit, the data wire electrical connection The data input pin of the on-off circuit, the common wire electrically connect the output end of the PN ray structures.

The third aspect, the embodiment of the present invention additionally provide a kind of display panel, including any embodiment of the present invention provides Array base palte.

Fourth aspect, the embodiment of the present invention additionally provide a kind of display device, including any embodiment of the present invention provides Display panel.

The present invention in LED chip by setting storage capacitance and on-off circuit, when on-off circuit is opened according to input Drive signal be storage capacitance charging so that storage capacitance provides constant glow current for PN ray structures, and then should After LED chip is arranged in each pixel of array base palte, the current value by each LED on every data line can be caused It is equal, solve the problems, such as to cause LED luminosity uneven by the way that LED electric current is unequal in array circuit, realize LED The luminosity of chip is uniform;In addition, the PN ray structures and on-off circuit of the present invention are all integrated in LED chip, and it is vertical To laminated construction, existing switching tube and the area shared by LED chip are substantially reduced, it is possible to achieve high pixel density and high score The display device of resolution.

Brief description of the drawings

Fig. 1 is a kind of structural representation for LED chip that the embodiment of the present invention one provides;

Fig. 2 is the equivalent circuit diagram for the LED chip that the embodiment of the present invention one provides;

Fig. 3 is a kind of equivalent structure schematic diagram for array base palte that the embodiment of the present invention two provides;

Fig. 4 is a kind of structural representation for display panel that the embodiment of the present invention three provides;

Fig. 5 is a kind of structural representation for display device that the embodiment of the present invention four provides.

Embodiment

The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that in order to just Part related to the present invention rather than entire infrastructure are illustrate only in description, accompanying drawing.

Embodiment one

A kind of LED chip structure schematic diagram that Fig. 1 provides for the embodiment of the present invention one, the LED core that the present embodiment is provided Piece is arranged in the pixel of array base palte, can make pixel uniformly light-emitting, as shown in figure 1, the PN ray structures of the LED chips with On-off circuit is integrated in one structure, can specifically include:

Substrate 10, substrate 10 include the first face 101 and second face 102 relative with the first face;

PN ray structures 11, on the first face 101 of substrate 10;

On-off circuit 12,102 on the second face of substrate 10, on-off circuit 12 and storage capacitance C and PN ray structure 11 electrical connections, charge when on-off circuit 12 is opened for storage capacitance C;

Storage capacitance C, including at least the first capacitance electrode 121 and the second capacitance electrode 123, for for PN ray structures 11 provide constant light emitting electric current.

It should be noted that first capacitance electrode 121 of the present embodiment and the position of the second capacitance electrode 123 and not only limiting In position shown in Fig. 1, Fig. 1 is merely illustrative, as long as depositing of being formed of the first capacitance electrode 121 and the second capacitance electrode 123 It can be that PN ray structures 11 provide constant light emitting electric current that storing up electricity, which holds C,.

In such scheme, substrate 10 can use silicon crystal material, and PN light-emitting junctions are formed on the first face 101 of substrate 10 Structure 11, PN ray structures 11 can be formed using Metalorganic chemical vapor deposition technique, it may include the N-type semiconductor stacked gradually Layer 111 and p type semiconductor layer 113, and the composite bed being formed between n type semiconductor layer 111 and p type semiconductor layer 113 112.PN ray structures 11 in the embodiment of the present invention are micro-led (Micro LED), using less electric current just It can drive micro-led luminous.In the present embodiment, the materials of PN ray structures 11 can have a multiple choices, such as GaN, GaAs, InGaN and AlInGaP etc., the PN ray structures 11 of different materials can send the light of different colours, for example, the present embodiment The material of PN ray structures 11 is preferably GaN (gallium nitride) material, corresponding to send blue light.Optionally, PN ray structures 11 may be used also Including being formed at P-type electrode of the p type semiconductor layer 113 away from the side of substrate 10, P-type electrode connects with the electricity of p type semiconductor layer 113 Touch, in the present embodiment, the above-mentioned reusable of first capacitance electrode 121 is the P-type electrode.Further, since p type semiconductor layer 113 Material is GaN, and doping concentration and mobility are relatively low, therefore transparent contacts (Fig. 1 is provided with p type semiconductor layer 113 Not shown in) Ohmic contact of p type semiconductor layer 113 and P-type electrode is obtained, ensure electric current in p type semiconductor layer 113 uniformly Distribution.P-type electrode is the layer of conductive material plated on p type semiconductor layer 113, for example, can be metal grill, Nano Silver and The transparent conductive materials such as graphene, to prepare transparent display.

Optionally, based on such scheme, when the non-flood of P-type electrode is set, the also settable passivation on transparent contacts Layer, for protecting transparent contacts and rear road to encapsulate yield.In addition, p type semiconductor layer 113 etch it is fluted, to expose N Type semiconductor layer 111.Formed with N-type electrode 122 on the n type semiconductor layer 111 exposed, the N-type electrode 122 is also in N-type The layer of conductive material plated on semiconductor layer 111, can be the transparent conductive materials such as metal grill, Nano Silver and graphene.Together Sample, passivation layer can be also formed on n type semiconductor layer 111.

In the present embodiment, on-off circuit 12 comprises at least a thin film transistor (TFT), and thin film transistor (TFT) is located at the of substrate 10 On two faces 102.Optionally, thin film transistor (TFT) includes being formed at grid 114 on the second face 102 of substrate 10, positioned at substrate 10 With first insulating barrier 115 of the grid 114 away from PN ray structures side, positioned at the first insulating barrier 115 away from the side of substrate 10 Semiconductor layer 116 and the drain electrode 117 positioned at the both ends of semiconductor layer 116 and source electrode 118, grid 114 therein is away from substrate 10 Side formed with the gate electrode made electrical contact with grid 114.Gate electrode can be transparent conductive material.Drain electrode therein 117 electrically connect with PN ray structures 11, for exporting luminous signal to PN ray structures 11 and storage capacitance C.Specifically can be with Electrically connected for drain electrode 117 with the realization of the p type semiconductor layers 113 of PN ray structures, wherein, realize electrical connection method have it is a variety of, Because P-type electrode and p type semiconductor layer 113 are by transparent contacts Ohmic contact, here by drain electrode 117 and P-type electrode 121 Between realize and electrically connect formed with first through hole (not shown in figure 1), so as to realize drain electrode 117 and the electricity of p type semiconductor layer 113 Connection.The first conduction material is filled with the inside of first through hole, for realizing conduction.The position of first through hole can drain In LED chip between 117 and p type semiconductor layer 113, formed with the second insulating barrier (figure between conduction material and first through hole Not shown in 1).Optionally, with reference to figure 1, the first conduction material 120 can also be formed at the side of LED chip, and the first conduction material Formed with the 3rd insulating barrier 119 between 120 and the side wall of LED chip.Optionally, the first conduction material 120 and the first capacitance electrode 121 can be integrally formed.Wherein, above-mentioned second insulating barrier and the 3rd insulating barrier 119 are to prevent drain electrode 117 and N-type semiconductor Layer 111 realizes electrical connection.

In the present embodiment, storage capacitance, including at least the first capacitance electrode and the second capacitance electrode, for being lighted for PN Structure provides constant light emitting electric current.After PN ray structures and thin film transistor (TFT) are by electrodes conduct, PN ray structures with it is thin Storage capacitance is formd between film transistor, the first capacitance electrode 121 therein is formed at p type semiconductor layer 113 away from N-type half The surface of the side of conductor layer 111, can be the P-type electrode of p type semiconductor layer 113, the first capacitance electrode 121 and drain electrode 117 it Between electrically connected by the first conduction material, and insulated between the first conduction material and n type semiconductor layer 111 by insulating barrier.Second electricity Hold electrode 123 to set with layer with grid 114, the second capacitance electrode 123 is partly led by the second through hole 124 in substrate 10 with N-type Body layer 111 is electrically connected, and the second conduction material is filled in the second through hole 124.

In the present embodiment, the equivalent circuit diagram of LED chip can be as shown in Figure 2.Optionally, the thin film transistor (TFT) of the present embodiment For P-type TFT, the operation principle of the LED chip is:Apply cut-in voltage, film in the grid 114 of thin film transistor (TFT) Transistor turns.Now, reference voltage (2.5V~3.3V), the leakage of thin film transistor (TFT) are applied in the source electrode 118 of thin film transistor (TFT) The output drive signal of pole 117, charged while driving PN ray structures 11 to light for storage capacitance C, and thin film transistor (TFT) Drain electrode 117 electrically connects with the P-type electrode of PN ray structures 11, so that p type semiconductor layer 113 is positive voltage, now in p-type half Form voltage difference between conductor layer 113 and n type semiconductor layer 111, the p type semiconductor layer 113 in PN ray structures 11 is injected into N The hole of type semiconductor layer 111, the electronics with being injected into P type semiconductor layers 113 from n type semiconductor layer 111, in N-type semiconductor Composite bed 112 between layer 111 and p type semiconductor layer 113 produces when meeting compound, and electrons drop into relatively low energy rank, together When released energy in a manner of photon, lighted.In above process, because of storage capacitance C the first capacitance electrode 121 and The voltage difference formed between two capacitance electrodes 123 is fixed, therefore the electric current for passing through PN ray structures 11 is fixed, and then The luminosity of PN ray structures 11 is uniform.

In the present embodiment, the first capacitance electrode and second capacitance electrode at least part face can be by changing the first electric capacity The distance between electrode and the second capacitance electrode and/or facing area change amount of storage capacity.

The technical scheme of the present embodiment, by setting storage capacitance and on-off circuit in LED chip, when on-off circuit is opened Charged when opening according to the drive signal of input for storage capacitance so that storage capacitance provides constant luminous electricity for PN ray structures Stream, and then after the LED chip is arranged in each pixel of array base palte, can cause by each on every data line LED current value is equal, and solve in array circuit causes LED luminosity is uneven to ask by the way that LED electric current is unequal Topic, the luminosity for realizing LED chip are uniform;In addition, the PN ray structures and on-off circuit of the present invention are all integrated in LED core In piece, and it is longitudinal laminated construction, substantially reduces existing switching tube and the area shared by LED chip, it is possible to achieve high picture Plain density and high-resolution display device.

Embodiment two

Fig. 3 show a kind of equivalent structure schematic diagram of array base palte of the offer of the embodiment of the present invention two, as shown in figure 3, The present embodiment is applicable to the array base palte of active driving, and the situation of array base palte uniformly light-emitting, and the array base palte includes The LED chip 314 that multi-strip scanning line 310, a plurality of data lines 311, a plurality of common wire 312 and above-described embodiment provide.

The scan line 310 and common wire 312 of array base palte intersect with the insulation of data wire 311 limits pixel region 313, LED chip 314 is arranged in pixel region 313, and surface sweeping line 310 is electrically connected to the control terminal of on-off circuit, and data wire 311 is electrically connected The data input pin of on-off circuit is connect, common wire 312 electrically connects the output end of PN ray structures.

Exemplary, the operation principle of the array base palte is:

The scan line 310 of array base palte gives the control terminal (film crystal of the Continuity signal controlling switch circuit of low-voltage The grid of pipe) so that thin film transistor (TFT) turns on.Data wire 311 is used to provide reference voltage (2.5V~3.3V), and electrically connects The source electrode of thin film transistor (TFT) into on-off circuit, the LED chip principle of luminosity in the present embodiment and LED core in above-described embodiment Piece principle of luminosity is consistent, and here is omitted.

The technical scheme of the present embodiment, by each pixel that the LED chip of above-described embodiment is arranged to array base palte In, it can make it that the current value by each LED on every data line is equal, solve in array circuit by LED electricity Unequal the problem of causing LED luminosity uneven is flowed, it is uniform to realize array base palte luminosity;In addition, the present invention PN ray structures and on-off circuit are all integrated in LED chip, and are longitudinal laminated construction, substantially reduce existing switching tube With the area shared by LED chip, it is possible to achieve high pixel density and high-resolution display device.

Embodiment three

Fig. 4 is a kind of structural representation for display panel that the embodiment of the present invention three provides, as shown in figure 4, the display surface Plate 410 includes the array base palte 411 that above-described embodiment provides.The display panel includes rim area 401 and viewing area 402, array Each LED chip on substrate 411 is in viewing area 402.

The display panel that the present embodiment provides includes the array base palte that above-described embodiment provides, and has identical function and has Beneficial effect.

Example IV

Fig. 5 is a kind of structural representation for display device that the embodiment of the present invention four provides.As shown in figure 5, the present embodiment A kind of display device 510 provided includes the display panel 511 that the above embodiment of the present invention is provided.The display device can be Mobile phone, computer, television set and intelligence wearing display device etc., or the windshield of vehicle, showcase, billboard are lived Residence glass etc., the present embodiment is not particularly limited to this.

A kind of display device that the present embodiment provides, including the display panel that above-described embodiment provides, have identical work( Energy and beneficial effect.

Pay attention to, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes, Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.

Claims (13)

  1. A kind of 1. LED chip, it is characterised in that including:
    Substrate, the substrate include the first face and second face relative with first face;
    PN ray structures, on first face of the substrate;
    On-off circuit, on second face of the substrate, the on-off circuit and storage capacitance and the PN light-emitting junctions Structure electrically connects, and is charged when the on-off circuit is opened for the storage capacitance;
    The storage capacitance, including at least the first capacitance electrode and the second capacitance electrode, for being provided for the PN ray structures Constant light emitting electric current.
  2. 2. LED chip according to claim 1, it is characterised in that the PN ray structures include the N-type half stacked gradually Conductor layer and p type semiconductor layer, and the composite bed being formed between the n type semiconductor layer and the p type semiconductor layer.
  3. 3. LED chip according to claim 2, it is characterised in that the material of main part of the PN ray structures is GaN.
  4. 4. LED chip according to claim 3, it is characterised in that the PN ray structures use organometallic chemistry gas Phase depositing operation is formed.
  5. 5. LED chip according to claim 2, it is characterised in that the on-off circuit comprises at least a film crystal Pipe.
  6. 6. LED chip according to claim 5, it is characterised in that the thin film transistor (TFT) includes being formed at the substrate Second face on grid, positioned at the substrate and the grid away from the PN ray structures side first insulation Layer, positioned at semiconductor layer of first insulating barrier away from the substrate side and the source electrode positioned at the semiconductor layer both ends And drain electrode, wherein, the drain electrode electrically connects with the p type semiconductor layer.
  7. 7. LED chip according to claim 6, it is characterised in that first capacitance electrode is formed at the p-type and partly led Surface of the body layer away from the n type semiconductor layer side, first electric capacity are electrically connected to the drain electrode by the first conduction material, And first conduction material insulate with the n type semiconductor layer.
  8. 8. LED chip according to claim 7, it is characterised in that it is described drain electrode first electric capacity between formed with First through hole, first conduction material are filled in the first through hole, and first conduction material and the first through hole it Between formed with the second insulating barrier;
    Or first conduction material is formed at the side of the LED chip, and first conduction material and the LED chip Side wall between formed with the 3rd insulating barrier.
  9. 9. LED chip according to claim 7, it is characterised in that second capacitance electrode is set with the grid with layer Put, second capacitance electrode is electrically connected by the second through hole in the substrate with the n type semiconductor layer.
  10. 10. LED chip according to claim 2, it is characterised in that the p type semiconductor layer etching is fluted, with exposure Go out the n type semiconductor layer.
  11. 11. a kind of array base palte, it is characterised in that including multi-strip scanning line, a plurality of data lines, a plurality of common wire and such as right will Seek the LED chip described in any one of 1-10;
    The scan line and the common wire, intersect with data wire insulation and limit pixel region, the LED chip is set In the pixel region, the scan line electrically connects the control terminal of the on-off circuit, is opened described in the data wire electrical connection The data input pin on powered-down road, the common wire electrically connect the output end of the PN ray structures.
  12. 12. a kind of display panel, it is characterised in that including array base palte as claimed in claim 11.
  13. 13. a kind of display device, it is characterised in that including display panel as claimed in claim 12.
CN201710873131.4A 2017-09-25 2017-09-25 A kind of LED chip, array base palte, display panel and display device CN107610604A (en)

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Publication number Priority date Publication date Assignee Title
EP0177275A2 (en) * 1984-09-29 1986-04-09 Kabushiki Kaisha Toshiba Photosensor suited for image sensor
CN1280308A (en) * 1999-07-07 2001-01-17 松下电器产业株式会社 Film transistor array and its producing method
US20110162950A1 (en) * 2008-12-06 2011-07-07 James Nessel Chalcogenide Nanoionic-Based Radio Frequency Switch
CN102750904A (en) * 2012-07-18 2012-10-24 刘纪美 Active addressing single-chip LED microdisplay
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