CN107591464B - A kind of multifunctional curved display screen LED material and its manufacturing method - Google Patents

A kind of multifunctional curved display screen LED material and its manufacturing method Download PDF

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Publication number
CN107591464B
CN107591464B CN201710803846.2A CN201710803846A CN107591464B CN 107591464 B CN107591464 B CN 107591464B CN 201710803846 A CN201710803846 A CN 201710803846A CN 107591464 B CN107591464 B CN 107591464B
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led
based
material
vinyl
gallium nitride
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CN201710803846.2A
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CN107591464A (en
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张迪明
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宁波高新区斯汀环保科技有限公司
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Abstract

The invention discloses a kind of multifunctional curved display screen LED material and its manufacturing methods, the LED material is specifically made of LED chip and LED encapsulation material, wherein LED chip is specially using silicon carbide as substrate, using gallium nitride as core, two electrodes are the L-type electrode for being respectively distributed to the surface and bottom of core, are wherein added with 2.5% silica, 1.6% indium, 1.2% arsenic and 0.6% aluminium by gallium nitride gross mass in gallium nitride core;LED encapsulation material specifically: vinyl silicon and siloxane polymerization are aggregated into hydrogeneous based high-polymer, then the organic siliconresin that two kinds of high polymers are synthesized under the action of inhibitor and platinum catalyst at vinyl silicon high polymer, poly- hydrogen-based siloxanes and vinyl based hydrogen-based silicone resin.The present invention does not use sapphire for substrate, it can be suitably used for large curved surface, high tenacity, anti-aging, good electric property, the light that different characteristics can be emitted according to the difference of output signal property, and degree of focus is increased by curved-surface display, the LED display for multifunctional household.

Description

A kind of multifunctional curved display screen LED material and its manufacturing method

Technical field

The present invention relates to display material field more particularly to a kind of multifunctional curved display screen LED material and its manufactures Method.

Background technique

LED display (LED display) is a kind of flat-panel monitor, is made of LED module panel small one by one, is used Equipment to show the various information such as text, image, video, video signal.

LED, light emitting diode (light emitting diode abbreviation).It is a kind of by control semiconductor light emitting two The display mode of pole pipe, gallium (Ga) and arsenic (As), phosphorus (P), nitrogen (N), indium (ln) compound made of diode, work as electronics With can give off visible light when hole-recombination, thus can be used to that light emitting diode is made.As instruction in circuit and instrument Lamp, or composition text or number display.Gallium arsenide phosphide diode glows, gallium phosphide diode green light, two pole of silicon carbide Pipe Yellow light-emitting low temperature, indium gallium nitrogen diode blue light-emitting.

But it is conventional in the prior art to use using sapphire as the pure gallium nitride chip of substrate and Araldite encapsulating material, but Using sapphire as substrate, there are some problems, such as lattice mismatch and thermal stress mismatch, this can generate big in the epitaxial layer Defect is measured, while causing difficulty to subsequent device manufacturing process.Sapphire is a kind of insulator, and the resistivity under room temperature is greater than 1011 Ω/cm can not make the device of vertical structure in this case;Usually N-shaped and p-type only are made in epitaxial layer upper surface Electrode (as shown in Figure 1).Two electrodes are made in upper surface, cause efficient lighting area reduction, while increasing device system As a result lithography and etching technical process in making reduces stock utilization, increased costs.With the development of power-type LED, ring Oxygen resin has been unable to meet requirement, but it has good adhesive property, dielectric properties as LED encapsulation material, and price is low It is honest and clean, easy to operate, in view of the advantage in organosilicon material performance and consideration in cost is reduced, it is total by physical blending and chemistry Poly- method makes modifying epoxy resin by organosilicon become numerous research directions.It can by organosilicon material Toughening Modification of Epoxy To improve its molecule chain flexibility, its internal stress is reduced, and then improve problem of Cracking;Utilize the good heat resistance of organosilicon and strong Ultraviolet resistance characteristic is modified the problems such as to improve the resistance to ag(e)ing of epoxy resin, poor heat resistance, ultraviolet resistance.Pure gallium nitride Chip material itself is more crisp, and the chromatography that shines is single, and the routine for not being suitable for present household LED display screen curved design uses feelings Condition.

Therefore, be badly in need of on the market it is a kind of do not use sapphire for substrate, can be suitably used for large curved surface, high tenacity, anti-aging, electric Gas performance is good, can emit the light of different characteristics according to the difference of output signal property, and increases degree of focus by curved-surface display, Display screen LED material for multifunctional household.

Summary of the invention

In view of the above defects of the prior art, the present invention is intended to provide a kind of do not use sapphire for substrate, energy Suitable for large curved surface, high tenacity, anti-aging, good electric property, different characteristics can be emitted according to the difference of output signal property Light, and by curved-surface display increase degree of focus, for multifunctional household multifunctional curved display screen LED material and its Manufacturing method.

To achieve the goals above, the invention adopts the following technical scheme: a kind of multifunctional curved display screen LED material Material, which is specifically made of LED chip and LED encapsulation material, wherein LED chip be specially using silicon carbide as substrate, with Gallium nitride is core, and two electrodes are the L-type electrode for being respectively distributed to the surface and bottom of core, is wherein pressed in gallium nitride core Gallium nitride gross mass is added with 2.5% silica, 1.6% indium, 1.2% arsenic and 0.6% aluminium;LED encapsulation material Specifically: by vinyl silicon and siloxane polymerization at vinyl silicon high polymer, poly- hydrogen-based siloxanes and vinyl based hydrogen-based silicone resin Aggregate into hydrogeneous based high-polymer, then the organic siliconresin that two kinds of high polymers are synthesized under the action of inhibitor and platinum catalyst.

The manufacturing method of above-mentioned multifunctional curved display screen LED material, comprising the following steps:

1) prepared by LED chip

1. prepare gallium nitride photoelectric device raw material, and in the feed in mass ratio example addition 2.5% silica, 1.6% indium, 1.2% arsenic and 0.6% aluminium;

2. preparing the silicon carbide substrates of 80nm-150nm thickness;

3. gallium nitride based LED core is directly produced by way of slowly growing on silicon carbide substrates;

4. addition makes electric current can be with the L-type electrode of longitudinal flow on gallium nitride based LED core, and makes two electrode difference The upper surface and bottom of core are set;

5. using 100 DEG C of -120 DEG C of stabilization processes 20min-30min, that is, LED chip needed for obtaining;

2) preparation of LED encapsulation material

1. preparing vinyl polysiloxane, the polysiloxanes containing ethenyl blocking;

2. preparing poly- hydrogen-based siloxanes, vinyl based hydrogen-based silicone resin;

3. 1. vinyl polysiloxane that step prepares and the polysiloxanes height containing ethenyl blocking are polymerized to high polymer, obtain Vinyl silicon and siloxane polymerization at vinyl silicon high polymer;

4. 2. poly- hydrogen-based siloxanes and vinyl based hydrogen-based silicone resin height that step prepares is polymerized to hydrogeneous based high-polymer;

5. preparing synthetic silicone resin inhibitor and platinum catalyst;

What 5. 6. 4. hydrogeneous based high-polymer and step that the vinyl silicon high polymer 3. obtained with step, step obtain obtained Inhibitor and platinum catalyst are raw material, synthesize high refractive index organic silicon resin, which is required LED Encapsulating material;

3) LED material final molding

1. LED chip is encapsulated after melting using LED encapsulation material heat, expose the L-type electrode both ends on LED chip, Multifunctional curved display screen LED material needed for obtaining.

Compared with the prior art, the present invention as the above scheme is adopted, has the advantage that the present invention does not use blue treasured Stone lining bottom in general, the epitaxial layer of GaN base material and device is mainly grown on a sapphire substrate, and uses sapphire as lining There are some problems, such as lattice mismatch and thermal stress mismatch, this can generate a large amount of defects in the epitaxial layer at bottom, while to subsequent Device manufacturing process cause difficulty, while sapphire is a kind of insulator, and the resistivity under room temperature is very big, in this case The device of vertical structure can not be made;N-shaped and p-type electrode only usually are made in epitaxial layer upper surface, i.e., makes two in upper surface A electrode causes efficient lighting area reduction, while increasing the lithography and etching technical process in device manufacture, as a result makes Stock utilization reduces, increased costs currently generally use since p-type GaN adulterates difficulty and prepare metallic transparent on p-type GaN The method of electrode, makes current spread, to achieve the purpose that uniformly light-emitting, but metallic transparent electrode generally to absorb about 30%~ 40% light, while the stable chemical performance of GaN base material, mechanical strength are higher, it is not easy to it is performed etching, therefore is being carved Preferable equipment is needed during erosion, this will will increase production cost, and sapphire hardness is very high, it is hard in nature material Degree is only second to diamond, but but needs to carry out it in the manufacturing process of LED component to be thinned and cut and (reduce to from 400nm 100nm or so), it adds the equipment for completing thinned and cutting technique and increases a biggish investment, sapphire thermal conductivity again It can not be fine (about 25W/ (mK) at 100 DEG C), therefore when using LED component, a large amount of heat can be transferred out;Especially It is to the biggish high power device of area, heating conduction is a very important Consideration, in order to overcome the above difficulty, this GaN photoelectric device is grown directly upon on silicon substrate by invention, and so as to improve thermally conductive and electric conductivity, the chip electrode of silicon substrate is also Two kinds of ways of contact can be used, be L contact (Laterial-contact, flat contact) and V contact (Vertical- respectively Contact, perpendicular contact), by both ways of contact, the electric current inside LED chip can be lateral flow, can also be with It is longitudinal flow, since electric current can increase the light-emitting area of LED with longitudinal flow, to improve the light out of LED Efficiency, because silicon is the good conductor of heat, the heating conduction of device can be obviously improved, so that the service life of device is extended, The heating conduction (thermal coefficient of silicon carbide be 490W/ (mK)) of silicon carbide substrates than Sapphire Substrate be higher by 10 times with On, it the use of the chip electrode of silicon carbide substrates is L-type, two distribution of electrodes are in the surface and bottom of device, generated heat It can directly be exported by electrode;This substrate does not need current-diffusion layer simultaneously, therefore light will not be by the material of current-diffusion layer Material absorbs, and improves light extraction efficiency again in this way;2.5% silica, 1.6% indium, 1.2% arsenic and 0.6% aluminium add It is added in gallium nitride, the toughness of LED core material can be obviously improved, while increasing the rich of spectrum, allow to as needed And it is adjusted flexibly;With the development of power-type LED, epoxy resin has been unable to meet requirement, but it has as LED encapsulation material Good adhesive property, dielectric properties, and it is cheap, easy to operate, in view of the advantage and reduction in organosilicon material performance Consideration in cost makes modifying epoxy resin by organosilicon become numerous research sides by the method for physical blending and chemical copolymerization To.Its molecule chain flexibility can be improved by organosilicon material Toughening Modification of Epoxy, reduce its internal stress, and then improve Problem of Cracking;It is modified using the good heat resistance and strong ultraviolet resistance characteristic of organosilicon to improve the ageing-resistant of epoxy resin Property, poor heat resistance, ultraviolet resistance the problems such as, and the organic siliconresin refractive index that the present invention obtains is 1.53, light transmittance 99%, Gu Changing shrinking percentage is 2%, and resistance to ultraviolet test and moisture-proof are good, therefore can obtain and not use sapphire for substrate, be can be suitably used for Large curved surface, high tenacity, anti-aging, good electric property, the light that different characteristics can be emitted according to the difference of output signal property, and Increase degree of focus by curved-surface display, the multifunctional curved display screen LED material for multifunctional household.

Specific embodiment

Embodiment 1:

A kind of multifunctional curved display screen LED material, the LED material is specifically by LED chip and LED encapsulation material group At wherein LED chip is specially using silicon carbide as substrate, and using gallium nitride as core, two electrodes are to be respectively distributed to core The L-type electrode on surface and bottom, wherein in gallium nitride core by gallium nitride gross mass added with 2.5% silica, 1.6% Indium, 1.2% arsenic and 0.6% aluminium;LED encapsulation material specifically: by vinyl silicon and siloxane polymerization at vinyl silicon High polymer, poly- hydrogen-based siloxanes and vinyl based hydrogen-based silicone resin aggregate into hydrogeneous based high-polymer, then two kinds of high polymers are being inhibited The organic siliconresin synthesized under the action of agent and platinum catalyst.

The manufacturing method of above-mentioned multifunctional curved display screen LED material, comprising the following steps:

1) prepared by LED chip

1. prepare gallium nitride photoelectric device raw material, and in the feed in mass ratio example addition 2.5% silica, 1.6% indium, 1.2% arsenic and 0.6% aluminium;

2. preparing the silicon carbide substrates of 100nm thickness;

3. gallium nitride based LED core is directly produced by way of slowly growing on silicon carbide substrates;

4. addition makes electric current can be with the L-type electrode of longitudinal flow on gallium nitride based LED core, and makes two electrode difference The upper surface and bottom of core are set;

5. using 110 DEG C of stabilization processes 25min, that is, LED chip needed for obtaining;

2) preparation of LED encapsulation material

1. preparing vinyl polysiloxane, the polysiloxanes containing ethenyl blocking;

2. preparing poly- hydrogen-based siloxanes, vinyl based hydrogen-based silicone resin;

3. 1. vinyl polysiloxane that step prepares and the polysiloxanes height containing ethenyl blocking are polymerized to high polymer, obtain Vinyl silicon and siloxane polymerization at vinyl silicon high polymer;

4. 2. poly- hydrogen-based siloxanes and vinyl based hydrogen-based silicone resin height that step prepares is polymerized to hydrogeneous based high-polymer;

5. preparing synthetic silicone resin inhibitor and platinum catalyst;

What 5. 6. 4. hydrogeneous based high-polymer and step that the vinyl silicon high polymer 3. obtained with step, step obtain obtained Inhibitor and platinum catalyst are raw material, synthesize high refractive index organic silicon resin, which is required LED Encapsulating material;

3) LED material final molding

1. LED chip is encapsulated after melting using LED encapsulation material heat, expose the L-type electrode both ends on LED chip, Multifunctional curved display screen LED material needed for obtaining.

Embodiment 2:

It is whole consistent with embodiment 1, it is in place of difference:

The manufacturing method of above-mentioned multifunctional curved display screen LED material, comprising the following steps:

1) prepared by LED chip

2. preparing the silicon carbide substrates of 80nm thickness;

5. using 100 DEG C of stabilization processes 20min, that is, LED chip needed for obtaining;

Embodiment 3:

It is whole consistent with embodiment 1, it is in place of difference:

The manufacturing method of above-mentioned multifunctional curved display screen LED material, comprising the following steps:

1) prepared by LED chip

2. preparing the silicon carbide substrates of 150nm thickness;

5. using 120 DEG C of stabilization processes 30min, that is, LED chip needed for obtaining;

The foregoing description of the disclosed embodiments, only for can be realized professional and technical personnel in the field or use this Invention.Various modifications to these embodiments will be readily apparent to those skilled in the art, institute herein The General Principle of definition can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, The present invention will not be limited to the embodiments shown herein, and is to fit to special with principles disclosed herein and novelty The consistent widest scope of point.

Claims (1)

1. a kind of multifunctional curved display screen LED material, the LED material are specifically made of LED chip and LED encapsulation material, It is characterized by: wherein LED chip is specially using silicon carbide as substrate, using gallium nitride as core, two electrodes are to be distributed respectively In the surface of core and the L-type electrode of bottom, 2.5% titanium dioxide is wherein added in gallium nitride core by gallium nitride gross mass Silicon, 1.6% indium, 1.2% arsenic and 0.6% aluminium;LED encapsulation material specifically: by vinyl silicon and siloxane polymerization at Vinyl silicon high polymer, poly- hydrogen-based siloxanes and vinyl based hydrogen-based silicone resin aggregate into hydrogeneous based high-polymer, then two kinds of height are gathered The organic siliconresin that object synthesizes under the action of inhibitor and platinum catalyst;
The manufacturing method of multifunctional curved display screen LED material the following steps are included:
1) prepared by LED chip
1. preparing gallium nitride photoelectric device raw material, and the silica of example addition 2.5%, 1.6% in mass ratio in the feed Indium, 1.2% arsenic and 0.6% aluminium;
2. preparing the silicon carbide substrates of 80nm-150nm thickness;
3. gallium nitride based LED core is directly produced by way of slowly growing on silicon carbide substrates;
4. addition makes electric current can be with the L-type electrode of longitudinal flow on gallium nitride based LED core, and two electrodes are respectively set In the upper surface and bottom of core;
5. using 100 DEG C of -120 DEG C of stabilization processes 20min-30min, that is, LED chip needed for obtaining;
2) preparation of LED encapsulation material
1. preparing vinyl polysiloxane, the polysiloxanes containing ethenyl blocking;
2. preparing poly- hydrogen-based siloxanes, vinyl based hydrogen-based silicone resin;
3. 1. vinyl polysiloxane that step prepares and the polysiloxanes height containing ethenyl blocking are polymerized to high polymer, second is obtained Alkenyl silicon and siloxane polymerization at vinyl silicon high polymer;
4. 2. poly- hydrogen-based siloxanes and vinyl based hydrogen-based silicone resin height that step prepares is polymerized to hydrogeneous based high-polymer;
5. preparing synthetic silicone resin inhibitor and platinum catalyst;
6. 5. inhibition that 4. hydrogeneous based high-polymer and step that the vinyl silicon high polymer 3. obtained with step, step obtain obtain Agent and platinum catalyst are raw material, synthesize high refractive index organic silicon resin, which is that required LED is encapsulated Material;
3) LED material final molding
1. being encapsulated LED chip after being melted using LED encapsulation material heat, exposes the L-type electrode both ends on LED chip, that is, obtain Multifunctional curved display screen LED material needed for obtaining.
CN201710803846.2A 2017-11-08 2017-11-08 A kind of multifunctional curved display screen LED material and its manufacturing method CN107591464B (en)

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Publication number Priority date Publication date Assignee Title
CN101499416A (en) * 2008-02-01 2009-08-05 住友电气工业株式会社 Method of growing group III-V compound semiconductor, and method of manufacturing light-emitting device and electronic device
CN101608068A (en) * 2009-07-10 2009-12-23 茂名市信翼化工有限公司;柯 松 Organ silicon material for encapsulating power-type LED and synthetic method thereof
CN101654560A (en) * 2009-07-10 2010-02-24 茂名市信翼化工有限公司;柯 松 Organic silicon material for power type LED encapsulation and synthetic method thereof
CN102122675A (en) * 2010-01-08 2011-07-13 台湾积体电路制造股份有限公司 Photonic device and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002021604A1 (en) * 2000-09-08 2002-03-14 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and optical device including the same
KR101282775B1 (en) * 2006-11-03 2013-07-05 엘지이노텍 주식회사 Light emitting device having vertical topoloty and method of making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101499416A (en) * 2008-02-01 2009-08-05 住友电气工业株式会社 Method of growing group III-V compound semiconductor, and method of manufacturing light-emitting device and electronic device
CN101608068A (en) * 2009-07-10 2009-12-23 茂名市信翼化工有限公司;柯 松 Organ silicon material for encapsulating power-type LED and synthetic method thereof
CN101654560A (en) * 2009-07-10 2010-02-24 茂名市信翼化工有限公司;柯 松 Organic silicon material for power type LED encapsulation and synthetic method thereof
CN102122675A (en) * 2010-01-08 2011-07-13 台湾积体电路制造股份有限公司 Photonic device and manufacturing method thereof

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