CN107579735A - A kind of low EMI atomizers driving chip circuit of high integration - Google Patents

A kind of low EMI atomizers driving chip circuit of high integration Download PDF

Info

Publication number
CN107579735A
CN107579735A CN201710660790.XA CN201710660790A CN107579735A CN 107579735 A CN107579735 A CN 107579735A CN 201710660790 A CN201710660790 A CN 201710660790A CN 107579735 A CN107579735 A CN 107579735A
Authority
CN
China
Prior art keywords
driving
mouths
emi
circuits
atomization
Prior art date
Application number
CN201710660790.XA
Other languages
Chinese (zh)
Other versions
CN107579735B (en
Inventor
张喜
褚晓峰
林俊盛
Original Assignee
芯海科技(深圳)股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 芯海科技(深圳)股份有限公司 filed Critical 芯海科技(深圳)股份有限公司
Priority to CN201710660790.XA priority Critical patent/CN107579735B/en
Publication of CN107579735A publication Critical patent/CN107579735A/en
Application granted granted Critical
Publication of CN107579735B publication Critical patent/CN107579735B/en

Links

Abstract

The invention discloses a kind of low EMI atomizers driving chip circuit of high integration, it includes EMI control circuits and a plurality of atomization driving I/O mouths, the EMI control circuits include DRVN circuits and DRVP circuits, and the DRVN circuits and DRVP circuit in parallel are in a plurality of atomization driving I/O mouths.The circuit enhances the atomizing piece driving chip driving force of itself, can reduce EMI interference.

Description

A kind of low EMI atomizers driving chip circuit of high integration

Technical field

The invention belongs to the technical field of atomizer, the driving chip circuit of more particularly to a kind of atomizer.

Background technology

In recent years, atomizer is widely used in health and the purposes of maintenance, atomizer by ultrasonic activation by water or Liquid, it is atomized as gas molecule.The signal of ultrasonic frequency is mainly passed to atomizing piece by its method by driving chip, will be straight Stream electricity is converted into ultrasonic energy.

Under the DC voltage of usual 5V~24V pairs of atomizer work, in order to drive atomizing piece to work, driving chip needs to produce Raw 1.7MHz or 2.4MHz frequency of oscillation, the driving switch of output stage can produce EMI interference in high speed make and break process, especially It is that high-power atomizing piece EMI interference is more obvious.BJT amplifier tubes are needed to increase driving force in plate level PCB schemes simultaneously, High-power atomizing piece is set to be worked under ultrasonic frequency.

As patent application 201520474288.6 discloses a kind of compression atomizer for avoiding impurity from disturbing, including shell Body, cylinder, atomising device, motor and motor fixing base, housing include base and lid, and motor is installed by a connecting bolt In on base, motor fixing base cover plate is fixedly connected by connecting bolt with motor;Multiple be used for is provided with the side wall of lid The strip through-hole of radiating, catch is provided with the lid inwall on the inside of each strip through-hole, the end of catch is arc-like sheet;Horse A vertical gusset is provided with up to the base of both sides.But the patent application is disturbed on atomizer impurity, it is only Only it is that the removal of impurity is disturbed, without reference to the improvement for driving chip, however it remains above mentioned problem.

Therefore, one kind is needed to reduce EMI interference, the driving chip side of low development cost high integration at present in the industry Case.

The content of the invention

Based on this, therefore the present invention primary mesh be to provide a kind of low EMI atomizers driving chip circuit of high integration, The circuit has high integration and with driving force, can reduce EMI interference.

It is to provide a kind of high integration low EMI atomizers driving chip circuit, the circuit another mesh of the present invention The atomizing piece driving chip driving force of itself is enhanced, the BJT driving tubes of current drive scheme can be replaced, reduce scheme device Part, cost is reduced, improve integrated level.

To achieve the above object, the technical scheme is that:

A kind of low EMI atomizers driving chip circuit of high integration, it includes EMI control circuits and a plurality of atomization drivings I/O mouths, the EMI control circuits include DRVN circuits and DRVP circuits, and the DRVN circuits and DRVP circuit in parallel are in described A plurality of atomization driving I/O mouths.

Further, a plurality of atomization driving I/O mouths include atomization driving I/O mouths 1, atomization driving I/O mouths 2, mist Change driving I/O mouths 3, atomization driving I/O mouths 4.EMI control circuits include DRVN circuits and DRVP circuits, the anti-EMI filter of DRVN outputs The NMOS driving tubes of signal control atomization driving I/O mouths, the PMOS of the anti-EMI filter signal control atomization driving I/O mouths of DRVP outputs Driving tube.

Further, DRVN the and DRVP circuits meet the oscillation frequency signal DRVINN of opposite in phase caused by chip respectively And DRVINP, and DRVN and DRVP circuits are connected to digital control position EMIctr<2:0>, it is possible thereby to set EMI circuits to shaking Swing frequency signal and carry out different delay disposals.

Further, the output end P and N of the EMI control circuits are respectively coupled to atomization driving I/O mouths 1, atomization driving I/O Mouth 2, atomization driving I/O mouths 3, the input of atomization driving I/O mouths 4, the output end lotus root for being atomized driving I/O mouths 1 to 4 are connected together As drive output.

EMI control circuits operation principle provided by the invention is as follows:DRVN and DRVP circuits point inside EMI control circuits The oscillation frequency signal of opposite in phase caused by chip is not connect, by digital control position EMIctr<2:0>EMI circuits pair can be set Oscillation frequency signal carries out four total different delay disposals, reduces the rising edge and trailing edge slope of square wave.Atomization driving I/O's Driving mos conductivity control signals have less delay difference, driving MOS is turned on timesharing, reduce driving MOS and work at the same time Caused rush of current, reduce EMI interference.

Thus, atomization driving I/O mouths can integrate big driving MOS, drive I/O port to provide output jointly by four atomizations and drive It is dynamic, four driving I/O can independent control working condition, driving force is controllable.

The atomizer driving chip circuit that the present invention is realized, has following technique effect:

1st, because EMI circuits can slow down the rising edge and trailing edge of output square wave, EMI interference is effectively reduced.

2nd, the big driving MOS of atomization driving I/O port can further reduce big driving EMI interference by conducting of staggering the time.

3rd, atomization driving I/O port is integrated with big driving MOS, enhances the atomizing piece driving chip driving force of itself, can be with Instead of the BJT driving tubes of current drive scheme, scheme device is reduced, cost is reduced, improves integrated level.

4th, four atomization driving IO can be controlled individually, and driving force can configure, and improve the applicability of chip.

Brief description of the drawings

Fig. 1 is the driving chip circuit diagram that the present invention is implemented.

Fig. 2 is the circuit diagram that the present invention implements EMI control modules.

Fig. 3 is the output waveform figure that the present invention implements EMI control circuits.

Oscillogram when Fig. 4 is no EMI control circuits.

Fig. 5 is the circuit diagram that atomizer driving is realized using the present invention.

Embodiment

In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and It is not used in the restriction present invention.

Shown in Fig. 1, for the atomizer driving chip circuit of the invention realized, shown in figure, the circuit includes EMI and controlled Circuit processed, atomization driving I/O mouths 1, atomization driving I/O mouths 2, atomization driving I/O mouths 3, atomization driving I/O mouths 4.EMI shown in Fig. 2 Control circuit includes DRVN circuits and DRVP circuits, the NMOS of DRVN output ends N anti-EMI filter signal control atomization driving I/O mouths Driving tube, the PMOS driving tubes of DRVP output ends P anti-EMI filter signal control atomization driving I/O mouths.EMI control circuits receive core 1.7MHz frequencies caused by piece are identical, opposite in phase two control square wave, respectively by DRVINP and DRVINN terminate into DRVP circuits and DRVN circuits, pass through 3 bit digital control bit EMIctr<2:0>, produce square-wave signal rising edge and trailing edge Different slopes.Output waveform is as shown in figure 3, be atomized driving IO output waveform, rise and fall edge when digital configuration bit is 100 Smooth out, do not overshoot shake.Fig. 4 is waveform caused by no EMI control circuits, has overshoot to disturb.

Four atomization driving I/O mouths in an embodiment of the present invention can be set using number by procedural freedom, real Existing driving force can configure.When two or more I/O is simultaneously in use, drive different I/O frequency signal to have small phase Difference, driving tube is realized conducting of staggering the time, further reduce EMI.

Wherein, the output end of EMI control circuits is respectively coupled to atomization driving I/O mouths 1, and atomization driving I/O mouths 2, atomization is driven Dynamic I/O mouths 3, the input of atomization driving I/O mouths 4.The output end lotus root of atomization driving I/O mouths 1 to 4 is connected together defeated as driving Go out end.Traditional atomization piece driving circuit input drive signal will drive NMOS after BJT amplifies driving by colelctor electrode Switch.Four atomization driving I/O mouths can provide enough driving forces in embodiments of the invention, can directly drive NMOS Switch, using the drive circuit of the present invention referring to Fig. 5, the driving output of driving chip can be directly connected to drive input, defeated Enter the grid of end connection FET, save two BJT pipe Q1 and Q2, by its function it is integrated reduce in the chips exploitation into This.

DRVN and DRVP circuits inside EMI control circuits connect the frequency of oscillation letter of opposite in phase caused by chip respectively Number, by digital control position EMIctr<2:0>EMI circuits can be set to be carried out to oscillation frequency signal at four total different delays Reason, reduce the rising edge and trailing edge slope of square wave.Atomization driving I/O driving mos conductivity control signals have less delay Difference, driving MOS is turned on timesharing, reduce driving MOS and work at the same time caused rush of current, reduce EMI interference.

Thus, atomization driving I/O mouths can integrate big driving MOS, drive I/O port to provide output jointly by four atomizations and drive It is dynamic, four driving I/O can independent control working condition, driving force is controllable.

The atomizer driving chip circuit that the present invention is realized, has following technique effect:

1st, because EMI circuits can slow down the rising edge and trailing edge of output square wave, EMI interference is effectively reduced.

2nd, the big driving MOS of atomization driving I/O port can further reduce big driving EMI interference by conducting of staggering the time.

3rd, atomization driving I/O port is integrated with big driving MOS, enhances the atomizing piece driving chip driving force of itself, can be with Instead of the BJT driving tubes of current drive scheme, scheme device is reduced, cost is reduced, improves integrated level.

4th, four atomization driving IO can be controlled individually, and driving force can configure, and improve the applicability of chip.

The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.

Claims (4)

1. the low EMI atomizers driving chip circuit of a kind of high integration, it is characterised in that the circuit includes EMI control circuits and multiple Several atomization driving I/O mouths, the EMI control circuits include DRVN circuits and DRVP circuits, DRVN circuits and the DRVP electricity Road is parallel to a plurality of atomization driving I/O mouths.
2. the low EMI atomizers driving chip circuit of high integration as claimed in claim 1, it is characterised in that a plurality of mists Change driving I/O mouths and include atomization driving I/O mouths 1, atomization driving I/O mouths 2, atomization driving I/O mouths 3, atomization driving I/O mouths 4; EMI control circuits include DRVN circuits and DRVP circuits, the NMOS of the anti-EMI filter signal control atomization driving I/O mouths of DRVN outputs Driving tube, the PMOS driving tubes of the anti-EMI filter signal control atomization driving I/O mouths of DRVP outputs.
3. the low EMI atomizers driving chip circuit of high integration as claimed in claim 2, it is characterised in that the DRVN and DRVP circuits connect the oscillation frequency signal DRVINN and DRVINP of opposite in phase caused by chip, and DRVN and DRVP circuits respectively It is connected to digital control position EMIctr<2:0>, it is possible thereby to set EMI circuits to be carried out to oscillation frequency signal at different delays Reason.
4. the low EMI atomizers driving chip circuit of high integration as claimed in claim 3, it is characterised in that the EMI controls The output end P and N of circuit are respectively coupled to atomization driving I/O mouths 1, atomization driving I/O mouths 2, atomization driving I/O mouths 3, atomization driving The input of I/O mouths 4, the output end lotus root of atomization driving I/O mouths 1 to 4 are connected together as drive output.
CN201710660790.XA 2017-08-04 2017-08-04 High-integration low-EMI atomizer driving chip circuit CN107579735B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710660790.XA CN107579735B (en) 2017-08-04 2017-08-04 High-integration low-EMI atomizer driving chip circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710660790.XA CN107579735B (en) 2017-08-04 2017-08-04 High-integration low-EMI atomizer driving chip circuit

Publications (2)

Publication Number Publication Date
CN107579735A true CN107579735A (en) 2018-01-12
CN107579735B CN107579735B (en) 2020-08-21

Family

ID=61034301

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710660790.XA CN107579735B (en) 2017-08-04 2017-08-04 High-integration low-EMI atomizer driving chip circuit

Country Status (1)

Country Link
CN (1) CN107579735B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090253A1 (en) * 2002-11-12 2004-05-13 Mcnitt John L. Method and apparatus for slew control of an output signal
CN2868444Y (en) * 2005-09-03 2007-02-14 熊武军 Low-pressure driving piezoelectric ceramic atomising-piece atomiser
CN202916627U (en) * 2012-10-31 2013-05-01 佛山市顺德区瑞德电子实业有限公司 High energy efficiency supersonic wave atomization energy transducer drive circuit
CN103222356A (en) * 2011-11-14 2013-07-24 联发科技股份有限公司 Method for performing chip level electromagnetic interference reduction, and associated apparatus
CN206075081U (en) * 2016-09-30 2017-04-05 贵州德莱易环保科技有限公司 Cartborne ultrasound ripple is atomized drive circuit
CN206099753U (en) * 2016-09-08 2017-04-12 东莞职业技术学院 Chip with anti -electromagnetic interference function

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090253A1 (en) * 2002-11-12 2004-05-13 Mcnitt John L. Method and apparatus for slew control of an output signal
CN2868444Y (en) * 2005-09-03 2007-02-14 熊武军 Low-pressure driving piezoelectric ceramic atomising-piece atomiser
CN103222356A (en) * 2011-11-14 2013-07-24 联发科技股份有限公司 Method for performing chip level electromagnetic interference reduction, and associated apparatus
CN202916627U (en) * 2012-10-31 2013-05-01 佛山市顺德区瑞德电子实业有限公司 High energy efficiency supersonic wave atomization energy transducer drive circuit
CN206099753U (en) * 2016-09-08 2017-04-12 东莞职业技术学院 Chip with anti -electromagnetic interference function
CN206075081U (en) * 2016-09-30 2017-04-05 贵州德莱易环保科技有限公司 Cartborne ultrasound ripple is atomized drive circuit

Also Published As

Publication number Publication date
CN107579735B (en) 2020-08-21

Similar Documents

Publication Publication Date Title
de Sarabia et al. Application of high-power ultrasound to enhance fluid/solid particle separation processes
CN103904880B (en) A kind of circuit for correcting part active power factor of input voltage threshold value control
CN101345513A (en) Switching audio power amplifier with de-noise function
CN106230317B (en) Porous flow increasing type rotary type piezoelectric generator
CN205414417U (en) Device of plasma atomizing preparation high performance powder for vibration material disk
CN202224301U (en) Energy-saving type water curtain spray booth for wooden door coating
CN201664585U (en) Gas-liquid mixing ejector for ethyl vanillin oxidation tower
CN103056061A (en) Ultrasonic vibration atomizer
CN103227566B (en) A kind of DC-DC converter
WO2002087076A3 (en) Class d amplifier with passive rc network
CN106823652B (en) System and method for agglomerating particulate matters by using ultrasonic atomization charged turbulence
CN103341466A (en) Multi-frequency switchable underwater construction cleaning and maintenance device
CN205669422U (en) A kind of vehicle exhaust fine particle electrostatic removing means combining reunion based on mist sound
CN102170958A (en) Jet-type radical ionizing device for treating flue gas by corona discharging
CN102681590A (en) Transmission circuit, ultrasonic probe and ultrasonic image display apparatus
Hu et al. A low power 100MΩ CMOS front-end transimpedance amplifier for biosensing applications
CN101361255A (en) A drive circuit
CN203437226U (en) Electrostatic dust collection system based on chaos magnetic strengthening
CN103489814A (en) Full-automation mega sound wave semiconductor wafer cleaning device
CN104209222A (en) Bernoulli twisted-pair low-frequency ultrasonic triple atomizing spray nozzle
CN105854479B (en) A kind of ammonia type flue gas desulfurizing apparatus and method for removing aerosol
US20160040646A1 (en) System and method for controlling electric fields in electro-hydrodynamic applications
CN104307675B (en) Three atomizers of a kind of cissoid lines low frequency ultrasound
CN205550991U (en) Water washing device is imitated to PCB plate height
CN204353005U (en) A kind of fine particle coagulation structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant