CN107565919A - A kind of S-band isolated amplifier of integrative packaging structure - Google Patents
A kind of S-band isolated amplifier of integrative packaging structure Download PDFInfo
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- CN107565919A CN107565919A CN201710717622.XA CN201710717622A CN107565919A CN 107565919 A CN107565919 A CN 107565919A CN 201710717622 A CN201710717622 A CN 201710717622A CN 107565919 A CN107565919 A CN 107565919A
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Abstract
The invention discloses a kind of S-band isolated amplifier of integrative packaging structure.The s wave band isolated amplifiers include：Soft magnetic bodies, the first permanent magnet, the second permanent magnet, ceramic block, power amplifier chip, wherein ceramic block is placed in the bottom, first permanent magnet, soft magnetic bodies, the second permanent magnet are respectively welded above ceramic block, and soft magnetic bodies are placed in the first permanent magnet, the conplane centre of the second permanent magnet, first permanent magnet, the second permanent magnet opposite face opposite polarity, power amplifier chip are welded on the first permanent magnet, the second permanent magnet top；The soft magnetic bodies, the first permanent magnet, the second permanent magnet main part are that LTCF techniques are realized with low temperature co-fired ferrite, and ceramic block main part is that LTCC techniques are realized with LTCC.Cost of the present invention is low, small volume, low in energy consumption, isolation is high, temperature stability is good, and reflected wave effects are small caused by by the fluctuation of load, and easy to install.
Description
Technical field
The invention belongs to microwave technical field, particularly a kind of S-band isolated amplifier of integrative packaging structure.
Background technology
Radio-frequency power amplifier has in the systems such as radar, radio communication, navigation, satellite communication, countermeasures set
It is widely applied, is the key equipment of Modern wireless communication, and its high-performance, low cost and Miniaturization Design method have become
The developing direction of microwave current/RF application.When designing circuit, add an isolator in the output stage of power amplifier, help
In output stage and the matching of load, prevent the reflection of high-power signal from causing the mismatch of device and burning, isolator is to amplifier
Protective effect be apparent.This component capabilities refer mainly to indicate：Operating frequency range, power output gain, gain
Noise figure, input and output OIP3, voltage standing wave ratio.
LTCC is a kind of Electronic Encapsulating Technology, using multi-layer ceramics technology, can be built in passive element
Inside medium substrate, while active component can also be mounted on to substrate surface passive/active integrated functional module is made.
LTCC technology is in cost, integration packaging, wiring line width and line spacing, low impedance metal, design diversity and flexibility and height
Frequency aspect of performance all has a clear superiority, it has also become the mainstream technology of passive integration.And ceramic material is replaced using Ferrite Material,
Low temperature co-fired ferrite (LTCF) can be made into using similar low temperature co-fired method, low temperature co-fired ferrite, which has more been widened, to be based on
The species of LTCC technology passive device and application.
However, current isolated amplifier often has the problem of volume is big, complicated, and reliability is low, cost
It is high, it is difficult to be produced in batches and extensive use.
The content of the invention
It is an object of the invention to provide it is a kind of it is simple in construction, stability is good, the S of easy to operate integrative packaging structure
Wave band isolated amplifier.
Realizing the technical solution of the object of the invention is：A kind of S-band isolated amplifier of integrative packaging structure, bag
Include：Soft magnetic bodies 1, the first permanent magnet 2, the second permanent magnet 3, ceramic block 4, power amplifier chip 5, wherein ceramic block 4 are placed in most bottom
Layer, the first permanent magnet 2, soft magnetic bodies 1, the second permanent magnet 3 are respectively welded at the top of ceramic block 4, and soft magnetic bodies 1 are placed in the first permanent magnetism
Body 2,3 conplane centre of the second permanent magnet, the first permanent magnet 2, the opposite face opposite polarity of the second permanent magnet 3, power amplification
Chip 5 is welded on the first permanent magnet 2, the second permanent magnet top 3；
The soft magnetic bodies 1 include the first lump wire-wound inductor L1, the second lump wire-wound inductor L2, the first weld port P1,
Second weld port P2, the 4th connecting lead wire Lin4, the 5th connecting lead wire Lin5, the first lump wire-wound inductor L1 is in soft magnetism
The upper and lower surface of body 1 has two cablings respectively, and the head end of two cablings is connected together respectively with tail end, and upper downward cabling is walked by side
Line is linked together, and cabling is all printed in the surface of soft magnetic bodies 1, and the first lump wire-wound inductor L1, which originates one end and is connected with the 5th, to be drawn
Line Lin5 is connected, and terminates end and is connected with the 6th connecting lead wire Lin6, helical form is presented in the second lump wire-wound inductor L2, shares six circles
Front and rear to move towards coil, wherein horizontal cabling is placed in inside soft magnetic bodies, oblique and vertical cabling is printed in the surface of soft magnetic bodies 1, and second
Lump wire-wound inductor L2 initiating terminals are connected with the 5th connecting lead wire Lin5, terminate end and are connected with the 4th connecting lead wire Lin4；First
Lump wire-wound inductor L1 is mutually perpendicular to the second lump wire-wound inductor L2, is isolated two-by-two；
First permanent magnet 2 includes the 3rd weld port P3, the 4th weld port P4, the 5th weld port P5, the 6th
Weld port P6, second permanent magnet 3 include the 7th weld port P7, the 8th weld port P8, the 9th weld port P9, the
Ten weld port P10, the 7th connecting lead wire Lin7；
The inside of ceramic block 4 includes the first spiral inductance L3, the second spiral inductance L4, the first electric capacity C1, the second electric capacity
C2, the 3rd electric capacity C3, the 8th connecting lead wire Lin8, the 9th connecting lead wire Lin9, the tenth connecting lead wire Lin10, the 11st connection
Lead Lin11, the 12nd connecting lead wire Lin12, the 13rd connecting lead wire Lin13, the 14th connecting lead wire Lin14, the 15th
Connecting lead wire Lin15, the 16th connecting lead wire Lin16, earth plate GND, the outer surface of ceramic block 4 include the 11st welding ends
Mouth P11, the 12nd weld port P12, the 13rd weld port P13, the 14th weld port P14, the 15th weld port
P15, the 16th weld port P16, the 17th weld port P17, the 18th weld port P18, the first pad P19, the second weldering
Disk P20, the first connecting lead wire Lin1, the second connecting lead wire Lin2, the 3rd connecting lead wire Lin3；The outer surface of ceramic block 4
One connecting lead wire Lin1 is connected with the 13rd weld port P13, surface the second connecting lead wire Lin2 and the 12nd weld port P12
Connection, the connecting lead wire Lin3 of surface the 3rd be connected with the 16th weld port P16, first spiral inductance L3 one end and the inside it
The connected other ends of eight connecting lead wire Lin8 are connected with the 9th connecting lead wire Lin9, and second spiral inductance L4 one end is connected with the tenth draws
The connected other ends of line Lin10 are connected with the 11st connecting lead wire Lin11, the first electric capacity C1 top crowns and the 12nd connecting lead wire
Lin12 is connected, and bottom crown is earth plate GND, and the second electric capacity C2 top crowns are connected with the 13rd connecting lead wire Lin13, bottom crown
For earth plate GND, the 3rd electric capacity C3 bottom crowns are connected with the 14th connecting lead wire Lin14, top crown and the 15th connecting lead wire
Lin15 is connected, and earth plate GND is connected with the 16th connecting lead wire Lin16；Wherein the 8th connecting lead wire Lin8, the 12nd connection
Lead Lin12 is connected with the 11st weld port P11, the 9th connecting lead wire Lin9, the 14th connecting lead wire Lin14 and the 12nd
Weld port P12 is connected, and the tenth connecting lead wire Lin10 is connected with the 15th weld port P15, the 11st connecting lead wire Lin11,
13rd connecting lead wire Lin13, the 15th connecting lead wire Lin15 are connected with the 13rd weld port P13, the 16th connecting lead wire
Lin16 is connected with the 16th weld port P16.
Further, the soft magnetic bodies 1 are welded on ceramic block 4 vertically, the 4th connecting lead wire Lin4 and the pottery on its surface
The 3rd connecting lead wire Lin3 one end of the upper surface of porcelain block 4 welds together, the 5th connecting lead wire Lin5 and the ceramic block 4 on its surface
Second connecting lead wire Lin2 one end of upper surface welds together, the 6th connecting lead wire Lin6 and the first of the upper surface of ceramic block 4
Connecting lead wire Lin1 one end welds together, surface the first weld port P1 of soft magnetic bodies 1 and the first pad of upper surface of ceramic block 4
P19 is welded, and surface the second weld port P2 and upper surface the second pad P20 of ceramic block 4 is welded.
Further, the weld port P3 of 2 surface of the first permanent magnet the 3rd and the weld port of 4 surface of ceramic block the 11st
P11 welds together, and the weld port P4 of 2 surface of the first permanent magnet the 4th and weld port P12 of 4 surface of ceramic block the 12nd is welded
Together, the weld port P5 of 2 surface of the first permanent magnet the 5th and weld port P13 of 4 surface of ceramic block the 13rd welds together,
The weld port P6 of first permanent magnet, 2 surface the 6th welds together with the weld port P14 of 4 surface of ceramic block the 14th；Second forever
The weld port P7 of 3 surface of magnet the 7th welds together with the weld port P18 of 3 surface of ceramic block the 18th, the table of the second permanent magnet 3
The weld port P8 of face the 8th welds together with the weld port P17 of 4 surface of ceramic block the 17th, the surface the 9th of the second permanent magnet 3
Weld port P9 welds together with the weld port P16 of 4 surface of ceramic block the 16th, the welding ends of 3 surface of the second permanent magnet the tenth
The mouth P10 and weld port P15 of 4 surface of ceramic block the 15th welds together, the connecting lead wire Lin7 of 3 surface of the second permanent magnet the 7th
One end is connected with the 8th weld port P8, and the other end is connected with power amplifier chip offset port Vds.
Further, the input port P21 of the power amplifier chip 5 and weld port P6 of 2 surface of the first permanent magnet the 6th
Connection, the output port P22 of power amplifier chip 5 are connected with the weld port P3 of 2 surface of the first permanent magnet the 3rd, offset port Vds
It is connected with the connecting lead wire Lin7 of 3 upper surface of the second permanent magnet the 7th.
Further, the 14th described weld port P14 is input port, and the 15th weld port P15 is output end
Mouthful, the 16th weld port P16 is grounding ports, and the 13rd weld port P13 isolates with the 12nd weld port P12 indirect one
Resistance R, the 17th weld port P17 are offset port, pass through decoupling capacitor C connection bias voltage Vd, the 11st weld port
P11, the 18th weld port P18 are hanging.
Further, the soft magnetic bodies 1, the first permanent magnet 2, the main part of the second permanent magnet 3 are with low temperature co-fired ferrite
LTCF techniques realize that the main part of ceramic block 4 is that LTCC techniques are realized with LTCC.
Further, the model WFD027035-P27 cake cores of power amplifier chip 5.
Further, wherein inductance uses square 3-dimensional multi-layered sped structure, and electric capacity uses metal-dielectric-gold
The structure of category form.
Compared with prior art, its remarkable advantage is the present invention：(1) it is simple in construction, it is easy to operate；(2) small volume, weight
Gently, stability is good；(3) reliability height, low cost, batch uniformity are high.
Brief description of the drawings
Fig. 1 is the schematic diagram of the S-band isolated amplifier of integrative packaging structure of the present invention.
Fig. 2 is the structural representation of the S-band isolated amplifier of integrative packaging structure of the present invention.
Fig. 3 is the soft magnetic bodies cut-away view in the S-band isolated amplifier of integrative packaging structure of the present invention.
Fig. 4 is the ceramic block cut-away view in the S-band isolated amplifier of integrative packaging structure of the present invention.
Fig. 5 is the assembling schematic diagram of the S-band isolated amplifier of integrative packaging structure of the present invention.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
With reference to Fig. 1,2, a kind of S-band isolated amplifier of integrative packaging structure, including soft magnetic bodies 1, the first permanent magnet
2nd, the second permanent magnet 3, ceramic block 4, power amplifier chip 5, wherein ceramic block 4 are placed in the bottom, the first permanent magnet 2, soft magnetic bodies
1st, the second permanent magnet 3 is respectively welded at the top of ceramic block 4, and to be placed in the first permanent magnet 2, the second permanent magnet 3 same flat for soft magnetic bodies 1
The centre in face, the first permanent magnet 2, the opposite face opposite polarity of the second permanent magnet 3, power amplifier chip 5 are welded on the first permanent magnet
2nd, 3 above the second permanent magnet；
The soft magnetic bodies 1 contain two lump wire-wound inductors, including the first lump wire-wound inductor L1, the second lump coiling electricity
L2, the first weld port P1, the second weld port P2, the 4th connecting lead wire Lin4, the 5th connecting lead wire Lin5 are felt, wherein first
Lump wire-wound inductor L1 has two cablings respectively in the upper and lower surface of soft magnetic bodies 1, and head end and the tail end of two cablings are connected in one respectively
Rise, upper downward cabling is linked together by side cabling, and cabling is all printed in the surface of soft magnetic bodies 1, the first lump wire-wound inductor
L1 originates one end and is connected with the 5th connecting lead wire Lin5, terminates end and is connected with the 6th connecting lead wire Lin6, the second lump coiling electricity
Feel L2 and helical form is presented, share and move towards coil before and after six circles, wherein horizontal cabling is placed in inside soft magnetic bodies, oblique and vertical cabling
The surface of soft magnetic bodies 1 is printed in, the second lump wire-wound inductor L2 initiating terminals are connected with the 5th connecting lead wire Lin5, terminate end and the 4th
Connecting lead wire Lin4 is connected, and the first lump wire-wound inductor L1 is mutually perpendicular to the second lump wire-wound inductor L2, is isolated two-by-two.
First permanent magnet 2 includes the 3rd weld port P3, the 4th weld port P4, the 5th weld port P5, the 6th
Weld port P6, second permanent magnet 3 include the 7th weld port P7, the 8th weld port P8, the 9th weld port P9, the
Ten weld port P10, the 7th connecting lead wire Lin7.
The inside of ceramic block 4 includes the first spiral inductance L3, the second spiral inductance L4, the first electric capacity C1, the second electric capacity
C2, the 3rd electric capacity C3, the 8th connecting lead wire Lin8, the 9th connecting lead wire Lin9, the tenth connecting lead wire Lin10, the 11st connection
Lead Lin11, the 12nd connecting lead wire Lin12, the 13rd connecting lead wire Lin13, the 14th connecting lead wire Lin14, the 15th
Connecting lead wire Lin15, the 16th connecting lead wire Lin16, earth plate GND, the outer surface of ceramic block 4 include the 11st welding ends
Mouth P11, the 12nd weld port P12, the 13rd weld port P13, the 14th weld port P14, the 15th weld port
P15, the 16th weld port P16, the 17th weld port P17, the 18th weld port P18, the first pad P19, the second weldering
Disk P20, the first connecting lead wire Lin1, the second connecting lead wire Lin2, the 3rd connecting lead wire Lin3；The outer surface of ceramic block 4
One connecting lead wire Lin1 is connected with the 13rd weld port P13, surface the second connecting lead wire Lin2 and the 12nd weld port P12
Connection, the connecting lead wire Lin3 of surface the 3rd be connected with the 16th weld port P16, first spiral inductance L3 one end and the inside it
The connected other ends of eight connecting lead wire Lin8 are connected with the 9th connecting lead wire Lin9, and second spiral inductance L4 one end is connected with the tenth draws
The connected other ends of line Lin10 are connected with the 11st connecting lead wire Lin11, the first electric capacity C1 top crowns and the 12nd connecting lead wire
Lin12 is connected, and bottom crown is earth plate GND, and the second electric capacity C2 top crowns are connected with the 13rd connecting lead wire Lin13, bottom crown
For earth plate GND, the 3rd electric capacity C3 bottom crowns are connected with the 14th connecting lead wire Lin14, top crown and the 15th connecting lead wire
Lin15 is connected, and earth plate GND is connected with the 16th connecting lead wire Lin16；Wherein the 8th connecting lead wire Lin8, the 12nd connection
Lead Lin12 is connected with the 11st weld port P11, the 9th connecting lead wire Lin9, the 14th connecting lead wire Lin14 and the 12nd
Weld port P12 is connected, and the tenth connecting lead wire Lin10 is connected with the 15th weld port P15, the 11st connecting lead wire Lin11,
13rd connecting lead wire Lin13, the 15th connecting lead wire Lin15 are connected with the 13rd weld port P13, the 16th connecting lead wire
Lin16 is connected with the 16th weld port P16.
Further, the soft magnetic bodies 1 are welded on ceramic block 4 vertically, the 4th connecting lead wire Lin4 and the pottery on its surface
The 3rd connecting lead wire Lin3 one end of the upper surface of porcelain block 4 welds together, the 5th connecting lead wire Lin5 and the ceramic block 4 on its surface
Second connecting lead wire Lin2 one end of upper surface welds together, the 6th connecting lead wire Lin6 and the first of the upper surface of ceramic block 4
Connecting lead wire Lin1 one end welds together, surface the first weld port P1 of soft magnetic bodies 1 and the first pad of upper surface of ceramic block 4
P19 is welded, and surface the second weld port P2 and upper surface the second pad P20 of ceramic block 4 is welded；
Further, the weld port P3 of 2 surface of the first permanent magnet the 3rd and weld port P11 of 4 surface of ceramic block the 11st
Weld together, the weld port P4 of 2 surface of the first permanent magnet the 4th is welded on the weld port P12 of 4 surface of ceramic block the 12nd
Together, the weld port P5 of 2 surface of the first permanent magnet the 5th and weld port P13 of 4 surface of ceramic block the 13rd welds together, the
The weld port P6 of one permanent magnet, 2 surface the 6th welds together with the weld port P14 of 4 surface of ceramic block the 14th；Second permanent magnetism
The weld port P7 of 3 surface of body the 7th welds together with the weld port P18 of 3 surface of ceramic block the 18th, the surface of the second permanent magnet 3
8th weld port P8 welds together with the weld port P17 of 4 surface of ceramic block the 17th, the weldering of the surface the 9th of the second permanent magnet 3
Meet the port P9 and weld port P16 of 4 surface of ceramic block the 16th to weld together, the weld port of 3 surface of the second permanent magnet the tenth
P10 welds together with the weld port P15 of 4 surface of ceramic block the 15th, the connecting lead wire Lin7 mono- of 3 surface of the second permanent magnet the 7th
End is connected with the 8th weld port P8, and the other end is connected with power amplifier chip offset port Vds；
Further, the input port P21 of the power amplifier chip 5 and weld port P6 of 2 surface of the first permanent magnet the 6th
Connection, the output port P22 of power amplifier chip 5 are connected with the weld port P3 of 2 surface of the first permanent magnet the 3rd, offset port Vds
It is connected with the connecting lead wire Lin7 of 3 upper surface of the second permanent magnet the 7th.
Further, the 14th weld port P14 of the integrative packaging isolated amplifier is input port, the 15th
Weld port P15 is output port, and the 16th weld port P16 is grounding ports, and the 13rd weld port P13 and the 12nd is welded
The indirect isolation resistance R of port P12 are met, the 17th weld port P17 is offset port, and biased electrical is connected by decoupling capacitor
Pressure, the 11st weld port P11, the 18th weld port P18 are hanging.
Further, the soft magnetic bodies 1, the first permanent magnet 2, the main part of the second permanent magnet 3 are with low temperature co-fired ferrite
LTCF techniques realize that the main part of ceramic block 4 is that LTCC techniques are realized with LTCC.
Further, the power amplifier chip model WFD027035-P27 cake cores.
Further, described inductance uses square 3-dimensional multi-layered sped structure, electric capacity using metal-dielectric-
The structure of metallic forms.
Embodiment 1
It is schematic diagram of the invention with reference to Fig. 1, the outside paster power amplifier PA modules are WFD027035-P27 cake cores,
It is a 2.7-3.5GHZ driving amplifiers, using GaAs heterojunction transistor (HFET) technique manufacture that 0.5um grid are grown
Into.The chip single supply is worked, operating voltage Vds=9V, and 27.5dBm power output, line can be provided in 2.7-3.5GHZ
Property gain 27dB, exemplary currents 350mA.
Fig. 2 is the broken away view of the present invention, and wherein ceramic block is placed in the bottom, the first permanent magnet, soft magnetic bodies, the second permanent magnet
It is respectively welded above ceramic block, and soft magnetic bodies are placed in the first permanent magnet, the conplane centre of the second permanent magnet, the first permanent magnetism
Body, the second permanent magnet opposite face opposite polarity, power amplifier chip are welded on the first permanent magnet, the second permanent magnet top；
Soft magnetic bodies 1 are endways to be welded on ceramic block, and the of the 4th connecting lead wire Lin4 on its surface and the upper surface of ceramic block 4
Three connecting lead wire Lin3 one end weld together, and the 5th connecting lead wire Lin5 on its surface connects with the second of the upper surface of ceramic block 4
Connect lead Lin2 one end to weld together, the 6th connecting lead wire Lin6 and the first connecting lead wire Lin1 mono- of the upper surface of ceramic block 4
End welds together, and surface the first weld port P1 of soft magnetic bodies 1 and upper surface the first pad P19 of ceramic block 4 is welded, surface second
Weld port P2 and upper surface the second pad P20 of ceramic block 4 is welded；
The weld port P3 of first permanent magnet, 2 surface the 3rd and weld port P11 of 4 surface of ceramic block the 11st is welded on one
Rising, the weld port P4 of 2 surface of the first permanent magnet the 4th welds together with the weld port P12 of 4 surface of ceramic block the 12nd, and first
The weld port P5 of 2 surface of permanent magnet the 5th welds together with the weld port P13 of 4 surface of ceramic block the 13rd, the first permanent magnet 2
The weld port P6 of surface the 6th welds together with the weld port P14 of 4 surface of ceramic block the 14th；The surface of second permanent magnet 3
Seven weld port P7 weld together with the weld port P18 of 3 surface of ceramic block the 18th, the welding of the surface the 8th of the second permanent magnet 3
Port P8 welds together with the weld port P17 of 4 surface of ceramic block the 17th, the weld port P9 of 3 surface of the second permanent magnet the 9th
Weld together with the weld port P16 of 4 surface of ceramic block the 16th, the weld port P10 of 3 surface of the second permanent magnet the tenth and ceramics
The weld port P15 of 4 surface of block the 15th welds together, connecting lead wire Lin7 one end of 3 surface of the second permanent magnet the 7th and the 8th
Weld port P8 is connected, and the other end is connected with power amplifier chip offset port Vds；
The input port P21 of power amplifier chip 5 is connected with the weld port P6 of 2 surface of the first permanent magnet the 6th, power amplification
The output port P22 of chip 5 is connected with the weld port P3 of 2 surface of the first permanent magnet the 3rd, offset port Vds and the second permanent magnet 3
The connecting lead wire Lin7 of upper surface the 7th is connected.
Fig. 3 be the present invention the cut-away view of soft magnetic bodies 1, including the first lump wire-wound inductor L1, the second lump coiling electricity
Feel L2, the first weld port P1, the second weld port P2, the 4th connecting lead wire Lin4, the 5th connecting lead wire Lin5, the first lump
Wire-wound inductor L1 has two cablings respectively in the upper and lower surface of soft magnetic bodies 1, and the head end of two cablings connects together respectively with tail end, on
Downward cabling is linked together by side cabling, and cabling is all printed in the surface of soft magnetic bodies 1, the first lump wire-wound inductor L1 startings
One end is connected with the 5th connecting lead wire Lin5, terminates end and is connected with the 6th connecting lead wire Lin6, the second lump wire-wound inductor L2 is in
Existing helical form, share and move towards coil before and after six circles, wherein horizontal cabling is placed in inside soft magnetic bodies, oblique and vertical cabling is printed in
The surface of soft magnetic bodies 1, the second lump wire-wound inductor L2 initiating terminals are connected with the 5th connecting lead wire Lin5, and end end is connected with the 4th draws
Line Lin4 is connected, and the first lump wire-wound inductor L1 is mutually perpendicular to the second lump wire-wound inductor L2, is isolated two-by-two.
Fig. 4 is the cut-away view of ceramic block 3 of the present invention, including the first spiral inductance L3, the second spiral inductance L4, first
Electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the 8th connecting lead wire Lin8, the 9th connecting lead wire Lin9, the tenth connecting lead wire
Lin10, the 11st connecting lead wire Lin11, the 12nd connecting lead wire Lin12, the 13rd connecting lead wire Lin13, the 14th connection
Lead Lin14, the 15th connecting lead wire Lin15, the 16th connecting lead wire Lin16, earth plate GND.
Fig. 5 is the assembling schematic diagram of the present invention, and the 14th weld port P14 of the integrative packaging isolated amplifier is
Input port, the 15th weld port P15 are output port, and the 16th weld port P16 is grounding ports, the 13rd welding ends
Mouth P13 and the 12nd weld port P12 indirect isolation resistance R, the 17th weld port P17 are offset port, are gone by one
Coupling electric capacity C connection bias voltages Vd, the 11st weld port P11, the 18th weld port P18 is hanging.The peripheral circuit R is
50 ohmage Chip-Rs, C are 1000pf paster decoupling capacitors, and Vd bias voltages are 9V.
In summary, the S-band isolated amplifier of integrative packaging structure of the present invention is simple in construction, easy to operate, relatively
There is significant advantage in legacy equipment.
Claims (8)
- A kind of 1. S-band isolated amplifier of integrative packaging structure, it is characterised in that including：Soft magnetic bodies (1), the first permanent magnetism Body (2), the second permanent magnet (3), ceramic block (4), power amplifier chip (5), wherein ceramic block (4) are placed in the bottom, and first forever Magnet (2), soft magnetic bodies (1), the second permanent magnet (3) are respectively welded above ceramic block (4), and soft magnetic bodies (1) are placed in first forever Magnet (2), the second permanent magnet (3) conplane centre, the first permanent magnet (2), the second permanent magnet (3) opposite face polarity phase Instead, power amplifier chip (5) is welded on the first permanent magnet (2), the second permanent magnet top (3)；The soft magnetic bodies (1) include the first lump wire-wound inductor (L1), the second lump wire-wound inductor (L2), the first weld port (P1), the second weld port (P2), the 4th connecting lead wire (Lin4), the 5th connecting lead wire (Lin5), the first lump coiling Inductance (L1) has two cablings respectively in soft magnetic bodies (1) upper and lower surface, and the head end of two cablings connects together respectively with tail end, on Downward cabling is linked together by side cabling, and cabling is all printed in soft magnetic bodies (1) surface, the first lump wire-wound inductor (L1) Starting one end is connected with the 5th connecting lead wire (Lin5), terminates end and is connected with the 6th connecting lead wire (Lin6), the second lump coiling Helical form is presented in inductance (L2), shares and moves towards coil before and after six circles, wherein horizontal cabling is placed in inside soft magnetic bodies, it is oblique and vertical Cabling is printed in soft magnetic bodies (1) surface, and the second lump wire-wound inductor (L2) initiating terminal is connected with the 5th connecting lead wire (Lin5), knot The connecting lead wires (Lin4) of Shu Duanyu the 4th are connected；First lump wire-wound inductor (L1) mutually hangs down with the second lump wire-wound inductor (L2) Directly, isolate two-by-two；First permanent magnet (2) include the 3rd weld port (P3), the 4th weld port (P4), the 5th weld port (P5), 6th weld port (P6), second permanent magnet (3) include the 7th weld port (P7), the 8th weld port (P8), the 9th Weld port (P9), the tenth weld port (P10), the 7th connecting lead wire (Lin7)；The first spiral inductance (L3), the second spiral inductance (L4), the first electric capacity (C1), second are included inside the ceramic block (4) Electric capacity (C2), the 3rd electric capacity (C3), the 8th connecting lead wire (Lin8), the 9th connecting lead wire (Lin9), the tenth connecting lead wire (Lin10), the 11st connecting lead wire (Lin11), the 12nd connecting lead wire (Lin12), the 13rd connecting lead wire (Lin13), 14 connecting lead wires (Lin14), the 15th connecting lead wire (Lin15), the 16th connecting lead wire (Lin16), earth plate (GND), Ceramic block (4) outer surface includes the 11st weld port (P11), the 12nd weld port (P12), the 13rd weld port (P13), the 14th weld port (P14), the 15th weld port (P15), the 16th weld port (P16), the 17th welding Port (P17), the 18th weld port (P18), the first pad (P19), the second pad (P20), the first connecting lead wire (Lin1), Second connecting lead wire (Lin2), the 3rd connecting lead wire (Lin3)；Ceramic block (4) first connecting lead wire of outer surface (Lin1) with 13rd weld port (P13) is connected, and the connecting lead wire of surface second (Lin2) is connected with the 12nd weld port (P12), surface 3rd connecting lead wire (Lin3) is connected with the 16th weld port (P16), its internal first spiral inductance (L3) one end and the 8th The connected other end of connecting lead wire (Lin8) is connected with the 9th connecting lead wire (Lin9), and the second spiral inductance (L4) one end connects with the tenth Connect the connected other end of lead (Lin10) with the 11st connecting lead wire (Lin11) to be connected, the first electric capacity (C1) top crown and the 12nd Connecting lead wire (Lin12) is connected, and bottom crown is earth plate (GND), the second electric capacity (C2) top crown and the 13rd connecting lead wire (Lin13) it is connected, bottom crown is earth plate (GND), the 3rd electric capacity (C3) bottom crown and the 14th connecting lead wire (Lin14) phase Even, top crown is connected with the 15th connecting lead wire (Lin15), and earth plate (GND) is connected with the 16th connecting lead wire (Lin16)； Wherein the 8th connecting lead wire (Lin8), the 12nd connecting lead wire (Lin12) are connected with the 11st weld port (P11), and the 9th connects Connect lead (Lin9), the 14th connecting lead wire (Lin14) is connected with the 12nd weld port (P12), the tenth connecting lead wire (Lin10) be connected with the 15th weld port (P15), the 11st connecting lead wire (Lin11), the 13rd connecting lead wire (Lin13), 15th connecting lead wire (Lin15) is connected with the 13rd weld port (P13), the 16th connecting lead wire (Lin16) and the 16th Weld port (P16) is connected.
- 2. the S-band isolated amplifier of integrative packaging structure according to claim 1, it is characterised in that the soft magnetism Body (1) is welded on ceramic block (4) vertically, the 4th connecting lead wire (Lin4) on its surface and the 3rd of ceramic block (4) upper surface the Connecting lead wire (Lin3) one end welds together, and the of the 5th connecting lead wire (Lin5) on its surface and ceramic block (4) upper surface Two connecting lead wires (Lin2) one end welds together, and the 6th connecting lead wire (Lin6) is connected with the first of ceramic block (4) upper surface Lead (Lin1) one end welds together, and soft magnetic bodies (1) the first weld port of surface (P1) is welded with ceramic block (4) upper surface first Disk (P19) is welded, and the weld port of surface second (P2) is welded with ceramic block (4) the second pad of upper surface (P20).
- 3. the S-band isolated amplifier of integrative packaging structure according to claim 1, it is characterised in that described first The weld port (P3) of permanent magnet (2) surface the 3rd welds together with the weld port (P11) of ceramic block (4) surface the 11st, the The weld port (P4) of one permanent magnet (2) surface the 4th welds together with the weld port (P12) of ceramic block (4) surface the 12nd, The weld port (P5) of first permanent magnet (2) surface the 5th is welded on one with the weld port (P13) of ceramic block (4) surface the 13rd Rise, the weld port (P6) of the first permanent magnet (2) surface the 6th is welded on the weld port (P14) of ceramic block (4) surface the 14th Together；The weld port (P7) of second permanent magnet (3) surface the 7th is welded with the weld port (P18) of ceramic block (3) surface the 18th Together, the weld port (P8) of the second permanent magnet (3) surface the 8th is welded with the weld port (P17) of ceramic block (4) surface the 17th It is connected together, the weld port (P9) of the second permanent magnet (3) surface the 9th and the weld port (P16) of ceramic block (4) surface the 16th Weld together, the weld port (P10) of the second permanent magnet (3) surface the tenth and the weld port of ceramic block (4) surface the 15th (P15) weld together, connecting lead wire (Lin7) one end of the second permanent magnet (3) surface the 7th and the 8th weld port (P8) phase Even, the other end is connected with power amplifier chip offset port (Vds).
- 4. the S-band isolated amplifier of integrative packaging structure according to claim 1, it is characterised in that the power Amplification chip (5) input port (P21) is connected with the weld port (P6) of the first permanent magnet (2) surface the 6th, power amplifier chip (5) output port (P22) is connected with the weld port (P3) of the first permanent magnet (2) surface the 3rd, and offset port (Vds) and second is forever The connecting lead wire (Lin7) of magnet (3) upper surface the 7th is connected.
- 5. the S-band isolated amplifier of integrative packaging structure according to claim 1, it is characterised in that described 14 weld ports (P14) are input port, and the 15th weld port (P15) is output port, the 16th weld port (P16) For grounding ports, the 13rd weld port (P13) and the indirect isolation resistance R of the 12nd weld port (P12), the 17th welding Port (P17) is offset port, and bias voltage (Vd), the 11st weld port (P11), the tenth are connected by decoupling capacitor (C) Eight weld ports (P18) are hanging.
- 6. the S-band isolated amplifier of integrative packaging structure according to claim 1, it is characterised in that the soft magnetism Body (1), the first permanent magnet (2), the second permanent magnet (3) main part are that LTCF techniques are realized with low temperature co-fired ferrite, ceramic block (4) main part is that LTCC techniques are realized with LTCC.
- 7. the S-band isolated amplifier of integrative packaging structure according to claim 1, it is characterised in that the power Amplification chip (5) model WFD027035-P27 cake cores.
- 8. the S-band isolated amplifier of integrative packaging structure according to claim 1, it is characterised in that wherein inductance Square 3-dimensional multi-layered sped structure is used, electric capacity uses the structure of metal-dielectric-metal form.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7183633B2 (en) * | 2001-03-01 | 2007-02-27 | Analog Devices Inc. | Optical cross-connect system |
| CN101031862A (en) * | 2004-09-30 | 2007-09-05 | 英特尔公司 | Three dimensional packaging and voltage regulator/converter module of cpu |
| CN101473490A (en) * | 2007-08-31 | 2009-07-01 | 株式会社村田制作所 | Irreversible circuit element |
| CN101593864A (en) * | 2008-05-27 | 2009-12-02 | 株式会社村田制作所 | The manufacture method of non-reciprocal circuit element and complex electronic device |
| CN106330268A (en) * | 2011-09-15 | 2017-01-11 | 基萨公司 | Wireless communication with dielectric medium |
| CN107069161A (en) * | 2017-06-07 | 2017-08-18 | 孙超 | Parameter isolator in a kind of Miniature collecting |
-
2017
- 2017-08-21 CN CN201710717622.XA patent/CN107565919B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7183633B2 (en) * | 2001-03-01 | 2007-02-27 | Analog Devices Inc. | Optical cross-connect system |
| CN101031862A (en) * | 2004-09-30 | 2007-09-05 | 英特尔公司 | Three dimensional packaging and voltage regulator/converter module of cpu |
| CN101473490A (en) * | 2007-08-31 | 2009-07-01 | 株式会社村田制作所 | Irreversible circuit element |
| CN101593864A (en) * | 2008-05-27 | 2009-12-02 | 株式会社村田制作所 | The manufacture method of non-reciprocal circuit element and complex electronic device |
| CN106330268A (en) * | 2011-09-15 | 2017-01-11 | 基萨公司 | Wireless communication with dielectric medium |
| CN107069161A (en) * | 2017-06-07 | 2017-08-18 | 孙超 | Parameter isolator in a kind of Miniature collecting |
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