CN107517085A - A kind of photoreceiver - Google Patents

A kind of photoreceiver Download PDF

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Publication number
CN107517085A
CN107517085A CN201710687181.3A CN201710687181A CN107517085A CN 107517085 A CN107517085 A CN 107517085A CN 201710687181 A CN201710687181 A CN 201710687181A CN 107517085 A CN107517085 A CN 107517085A
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CN
China
Prior art keywords
photoreceiver
characterised
layers
photodiode
connected
Prior art date
Application number
CN201710687181.3A
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Chinese (zh)
Inventor
张亮
Original Assignee
西安科锐盛创新科技有限公司
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Priority to CN201710687181.3A priority Critical patent/CN107517085A/en
Publication of CN107517085A publication Critical patent/CN107517085A/en

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Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/1812Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • H04B10/66Non-coherent receivers, e.g. using direct detection
    • H04B10/69Electrical arrangements in the receiver
    • H04B10/691Arrangements for optimizing the photodetector in the receiver

Abstract

The present invention relates to a kind of photoreceiver, including:Photodiode (11), input amplifier (12) and process circuit (13);Wherein, the photodiode (11) is connected with the input amplifier (12);The input amplifier (12) is connected with the process circuit (13).Photoreceiver provided by the invention, improve the performance of photoreceiver and reduce photoreceiver power consumption.With the performance that volume is smaller, cost is lower and more stable.

Description

A kind of photoreceiver

Technical field

The present invention relates to technical field of photo communication, more particularly to a kind of photoreceiver.

Background technology

With the rapid development of Internet technology, people rapidly increase to the demand of Internet resources, and internet is provided Service tends to diversification, and the realization of everything is required for the optical-fiber network of high speed as carrier.The construction of high speed optical networks at present Turn into will of the state, the integration of three networks turns into trend of the times, and abundant Internet resources are providing the user brand-new interactive joy While happy mode and adventure in daily life, also comprehensive service is provided for enterprise and trade company.

Fiber optic communication is important application of the photoelectron technology in the communications field, the appearance and development of fiber optic communication, is being communicated There is far reaching significance, it is considered to be the change of communication history last time essence in development history.Photoreceiver is optical fiber telecommunications system In indispensable important component, its function be exported from fibre circuit, produce distortion faint optical signal change For electric signal, and it is amplified and processed after generation be available for the electric signal of subsequent conditioning circuit.Photoreceiver is by semiconductor photo diode (such as PIN photodiode or MSM-PD diodes), pre-amplification circuit and interlock circuit composition.And with monolithic photonic collection Connect into circuit (Opoelectronic Integrated Circuit, the OEIC) development of technology and the demand of application market, light Receipts machine developing direction realizes integrating from simple to complexity, from a small number of elements to more multicomponent as large scale integrated circuit, The highly integrated component together such as final collection opto-electronic device, preamplifier and main amplifier.

However, photoreceiver is improved due to the limitation of photodiode responsiveness and quantum efficiency in photoreceiver at present Performance and reduce photoreceiver power consumption and become particularly difficult.Therefore the pole of photoelectricity two of selection high-speed response rate and high-quantum efficiency Pipe just becomes of crucial importance to improve the performance of photoreceiver and reduce photoreceiver power consumption.

The content of the invention

In order to solve the above-mentioned technical problem, the invention provides a kind of photoreceiver, including:Photodiode 11, input Amplifier 12 and process circuit 13;Wherein,

The photodiode 11 is connected with the input amplifier 12;The input amplifier 12 and the processing electricity Road 13 is connected.

Wherein, the process circuit 13 includes balanced device 131, attenuator 132, agc circuit 133 and output amplifier 134; Wherein, the balanced device 131 is connected with the input amplifier 12, and the attenuator 132 is connected with the balanced device 131 Connect, the output amplifier 134 is connected with the attenuator 132, and the both ends of the agc circuit (133) connect decay respectively Device (132) and the output amplifier (134).

In one embodiment of the invention, the photodiode 11 is PIN photodiode.

In one embodiment of the invention, the PIN photodiode is the pole of GeSn photoelectricity two of horizontal PIN structural Pipe.

In one embodiment of the invention, the photodiode 11 includes:Si substrates 111, crystallization Ge layers 112, GeSn layers 113, positive electrode 114 and negative electrode 115;Wherein,

The n-type doping area that the crystallization Ge floor 112 is arranged on the Si substrates 111 and is arranged in order including horizontal direction 1121st, i types area 1122 and p-type doped region 1123;

The GeSn floor 113 is arranged on the surface of i types area 1122;

One end of the positive electrode 114 connects the p-type doped region 1123, and the other end is connected to the input amplifier 12;

One end of the negative electrode 115 connects the n-type doping area 1121, and the other end is connected to the input amplifier 12。

In one embodiment of the invention, the crystallization Ge layers 112 include Ge seed layers and Ge body layers.

In one embodiment of the invention, the Doped ions in the n-type doping area 1121 be P, doping concentration be 1 × 1020cm-3;The Doped ions of the p-type doped region 1123 are B, doping concentration is 1 × 1020cm-3

In one embodiment of the invention, positive electrode 114 and the negative electrode 115 material is Cr or Au.

In one embodiment of the invention, the photodiode 11 also includes passivation layer 116, the passivation layer 116 The crystallization Ge layers 112 and the upper surface of GeSn layers 113 are arranged at, for isolating the positive electrode 114 and the negative electrode 115。

Compared with prior art, the invention has the advantages that:

1. photoreceiver provided by the invention, using the pole of photoelectricity two for the characteristic for possessing high-speed response rate and high-quantum efficiency Pipe, and then improve the performance of photoreceiver and reduce photoreceiver power consumption.

2. photoreceiver provided by the invention, there is the performance that volume is smaller, cost is lower and more stablizes.

Brief description of the drawings

, below will be to embodiment or existing skill for the clear explanation embodiment of the present invention or technical scheme of the prior art The required accompanying drawing used is briefly described in art description.Drawings in the following description are some embodiments of the present invention, right In those of ordinary skill in the art, on the premise of not paying creative work, can also be obtained according to these accompanying drawings other Accompanying drawing.

Fig. 1 is a kind of photoreceiver structural representation provided in an embodiment of the present invention;

Fig. 2 is process circuit schematic diagram provided in an embodiment of the present invention;

Fig. 3 is a kind of GeSn photoelectric diode structures schematic diagram provided in an embodiment of the present invention;

Fig. 4 a- Fig. 4 k are a kind of preparation method of horizontal PiN structures GeSn photodiodes provided in an embodiment of the present invention Schematic diagram.

Embodiment

Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made Embodiment, belong to the scope of protection of the invention.

Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to This.

Embodiment one

Refer to Fig. 1, Fig. 1 is a kind of photoreceiver structural representation provided in an embodiment of the present invention, the photoreceiver bag Include:Photodiode 11, input amplifier 12 and process circuit 13;Wherein,

Photodiode 11 is connected with input amplifier 12;Input amplifier 12 is connected with process circuit 13.

Preferably, Fig. 2 is referred to, Fig. 2 is process circuit schematic diagram provided in an embodiment of the present invention, and process circuit 13 includes Balanced device 131, attenuator 132, agc circuit 133 and output amplifier 134;Wherein, balanced device 131 and the phase of input amplifier 12 Connection, attenuator 132 are connected with balanced device 131, and output amplifier 134 is connected with attenuator 132, agc circuit (133) Both ends connect attenuator (132) and output amplifier (134) respectively.

Wherein, the optical signal of input is converted to electric signal by photodiode 11, and electric signal is put by input amplifier 12 Balanced device 131 is delivered to after big, electric signal can realize that the half of photoreceiver tilts high level output by balanced device 131, improve The carrying load ability of photoreceiver;Then electric signal feeding attenuator 132 is completed into the adjustment to its amplitude, passes through output afterwards Amplifier 134 completes output.

Wherein, agc circuit 133 is used for control and monitoring to photoreceiver.

Further, photodiode 11 is PIN photodiode.

Preferably, PIN photodiode is the GeSn photodiodes of horizontal PIN structural.

Further, Fig. 3 is referred to, Fig. 3 is a kind of GeSn photoelectric diode structures signal provided in an embodiment of the present invention Figure, photodiode include:Si substrates 111, crystallization Ge layers 112, GeSn layers 113, positive electrode 114 and negative electrode 115;Wherein,

Crystallization Ge layers 112 are arranged on Si substrates 111, and crystallization Ge floor 112 includes n-type doping area 1121, the and of i types area 1122 P-type doped region 1123;

GeSn floor 113 is arranged on the surface of i types area 1122;

One end connection p-type doped region 1123 of positive electrode 114, the other end is connected to input amplifier 12;

One end connection n-type doping area 1121 of negative electrode 115, the other end is connected to input amplifier 12.

Preferably, crystallization Ge layers 112 include Ge seed layers and Ge body layers.

Preferably, the Doped ions in n-type doping area 1121 be P, doping concentration be 1 × 1020cm-3;P-type doped region 1123 Doped ions be B, doping concentration be 1 × 1020cm-3

Wherein, positive electrode 114 and the material of negative electrode 115 are Cr or Au.

Preferably, photodiode 11 also includes passivation layer 116, and passivation layer 116 is arranged at crystallization Ge layers 112 and GeSn layers 113 upper surfaces, for isolating positive electrode 114 and negative electrode 115.

The photoreceiver that the present embodiment provides, photoreceiver power consumption more of the prior art is smaller, cost is lower.

Embodiment two

On the basis of above-described embodiment, emphasis carries out detailed the present embodiment to the structure and technique of GeSn photodiodes Introduce.

Specifically, the GeSn photodiodes include:Si substrates and crystallization Ge layers, the GeSn being arranged on the Si substrates Layer and metal electrode.Wherein, crystallization Ge floor includes n-type doping area, i types area and p-type doped region so as to form horizontal P-i-N knots Structure, GeSn floor are arranged on the i types area surface, and metal electrode includes positive electrode and negative electrode and is respectively arranged at p-type doped region On n-type doping area.

Further, for ease of being more clearly understood that the present embodiment, it is described in detail below especially exemplified by specific example.

It is a kind of horizontal PiN structures GeSn provided in an embodiment of the present invention please also refer to Fig. 4 a- Fig. 4 k, Fig. 4 a- Fig. 4 k The preparation method schematic diagram of photodiode.The present embodiment is on the basis of above-described embodiment, to the horizontal PiN structures of the present invention The preparation method of GeSn photodiodes is described in detail as follows:

S101, substrate are chosen.As shown in fig. 4 a, it is original material to choose single crystal Si substrate 001;

S102, Ge outer layer growth.

S1021, Ge inculating crystal layer grow.As shown in Figure 4 b, at a temperature of 275 DEG C~325 DEG C, using CVD techniques in monocrystalline Si substrate surfaces growth thickness is 40~50nm Ge inculating crystal layers 002;

S1022, Ge body layer grow.As illustrated in fig. 4 c, at a temperature of 500 DEG C~600 DEG C, using CVD techniques in Ge seeds Crystal layer superficial growth thickness is 250nm Ge body layers 003;

S103, protective layer preparation.As shown in figure 4d, using CVD techniques, deposition thickness is in Ge main body layer surfaces 150nm SiO2Layer 004;

The crystallization of S104, Ge epitaxial layer.As shown in fig 4e, will include single crystal Si substrate, Ge inculating crystal layers, Ge body layers and SiO2The whole backing material of layer is heated to 700 DEG C, continuously uses the whole backing material of laser technology crystallization, wherein, laser wave A length of 808nm, laser spot size 10mm × 1mm, laser power 1.5kW/cm2, laser traverse speed 25mm/s, nature Whole backing material is cooled down, obtains crystallization Ge layers 005.

S105, p-type ion implanting.As shown in fig. 4f, selective etch SiO2Layer, B ion implantings, is formed in crystallization Ge layers Doping concentration is 1 × 1020cm-3P-type doped region 006.

S106, N-type ion implanting.As shown in figure 4g, SiO is etched away2Layer 004, deposition thickness is 200nm SiO again2 Protective layer 007;As shown in figure 4h, selective etch, P ion injection, it is 1 × 10 to form doping concentration in crystallization Ge layers20cm-3 N-type doping area 008, etch away SiO2Protective layer 007, high annealing.

S107, undoped with crystallization Ge floor be that selective GeSn Material growths are carried out in i types area.As shown in figure 4i, exist H2Less than 350 DEG C are reduced the temperature in atmosphere, SnCl4And GeH4Respectively as Sn and Ge sources.GeH4/SnCl4Gas flow ratio is 0.95~0.99, the ratio is determined by Ge/Sn components.Growth thickness is 150~200nm undoped GeSn materials 009.

It is prepared by S008, metal contact hole.As shown in figure 4j, deposition thickness is 300~350nm SiO2Passivation layer 010, every Destage face makes electrical contact with extraneous.Contact hole is etched, the SiO of designated area is fallen with etching technics selective etch2The shape of passivation layer 010 Into metal contact hole.

It is prepared by S009, metal interconnection.As shown in fig. 4k.It is 150~200nm's using electron beam evaporation process deposition thickness Metal level 011.The metal level of selective eating away designated area is carved using etching technics, is planarized using chemically mechanical polishing Processing.

To sum up, specific case used herein is explained the principle and embodiment of a kind of photoreceiver of the present invention State, the explanation of above example is only intended to help the method and its core concept for understanding the present invention;Meanwhile for this area Those skilled in the art, according to the thought of the present invention, there will be changes in specific embodiments and applications, to sum up, This specification content be should not be construed as limiting the invention, and protection scope of the present invention should be defined by appended claim.

Claims (9)

  1. A kind of 1. photoreceiver, it is characterised in that including:Photodiode (11), input amplifier (12) and process circuit (13);Wherein,
    The photodiode (11) is connected with the input amplifier (12);The input amplifier (12) and the processing Circuit (13) is connected.
  2. 2. photoreceiver according to claim 1, it is characterised in that the process circuit (13) include balanced device (131), Attenuator (132), agc circuit (133) and output amplifier (134);Wherein,
    The balanced device (131) is connected with the input amplifier (12), the attenuator (132) and the balanced device (131) it is connected, the output amplifier (134) is connected with the attenuator (132), the both ends of the agc circuit (133) Attenuator (132) and the output amplifier (134) are connected respectively.
  3. 3. photoreceiver according to claim 1, it is characterised in that the photodiode (11) is the pole of PIN photoelectricity two Pipe.
  4. 4. photoreceiver according to claim 3, it is characterised in that the PIN photodiode is horizontal PIN structural GeSn photodiodes.
  5. 5. the photoreceiver according to claim 1 or 4, it is characterised in that the photodiode (11) includes:Si substrates (111), crystallization Ge layers (112), GeSn layers (113), positive electrode (114) and negative electrode (115);Wherein,
    The crystallization Ge layers (112) are arranged on the Si substrates (111), the crystallization Ge layers (112) include horizontal direction according to N-type doping area (1121), i types area (1122) and the p-type doped region (1123) of secondary arrangement;
    The GeSn floor (113) is arranged on i types area (1122) surface;
    One end of the positive electrode (114) connects the p-type doped region (1123), and the other end is connected to the input amplifier (12);
    One end of the negative electrode (115) connects the n-type doping area (1121), and the other end is connected to the input amplifier (12)。
  6. 6. photoreceiver according to claim 5, it is characterised in that the crystallization Ge layers (112) include Ge seed layers and Ge body layers.
  7. 7. photoreceiver according to claim 5, it is characterised in that the Doped ions of the n-type doping area (1121) are P, doping concentration is 1 × 1020cm-3;The Doped ions of the p-type doped region (1123) are B, doping concentration is 1 × 1020cm-3
  8. 8. photoreceiver according to claim 5, it is characterised in that the positive electrode (114) and the negative electrode (115) Material is Cr or Au.
  9. 9. photoreceiver according to claim 5, it is characterised in that the photodiode (11) also includes passivation layer (116), the passivation layer (116) is arranged at the upper surface of the crystallization Ge layers (112) and the GeSn layers (113), for every From the positive electrode (114) and the negative electrode (115).
CN201710687181.3A 2017-08-11 2017-08-11 A kind of photoreceiver CN107517085A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203482337U (en) * 2013-09-30 2014-03-12 成都康特电子高新科技有限责任公司 Broadcast/television optical receiver
US20140334832A1 (en) * 2007-10-10 2014-11-13 Luxtera, Inc. Method And System For A Narrowband, Non-Linear Optoelectronic Receiver
CN104506244A (en) * 2014-12-25 2015-04-08 四川璧虹广播电视新技术有限公司 AGC (automatic gain control) control circuit for management type household optical receiving machine
CN105405916A (en) * 2015-12-22 2016-03-16 中国科学院半导体研究所 Silicon-based wide spectrum detector and preparation method therefor
CN207369045U (en) * 2017-08-11 2018-05-15 西安科锐盛创新科技有限公司 A kind of photoreceiver

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140334832A1 (en) * 2007-10-10 2014-11-13 Luxtera, Inc. Method And System For A Narrowband, Non-Linear Optoelectronic Receiver
CN203482337U (en) * 2013-09-30 2014-03-12 成都康特电子高新科技有限责任公司 Broadcast/television optical receiver
CN104506244A (en) * 2014-12-25 2015-04-08 四川璧虹广播电视新技术有限公司 AGC (automatic gain control) control circuit for management type household optical receiving machine
CN105405916A (en) * 2015-12-22 2016-03-16 中国科学院半导体研究所 Silicon-based wide spectrum detector and preparation method therefor
CN207369045U (en) * 2017-08-11 2018-05-15 西安科锐盛创新科技有限公司 A kind of photoreceiver

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ZIHENG LIU 等: "Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering", 《THIN SOLID FILMS》 *
黄志伟: "激光退火改善 Si 上外延 Ge 晶体质量", 《第十一届全国硅基光电子材料及器件研讨会论文摘要集》 *

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