CN107482063A - Low-temperature polysilicon film transistor and its manufacture method - Google Patents
Low-temperature polysilicon film transistor and its manufacture method Download PDFInfo
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- CN107482063A CN107482063A CN201710735368.6A CN201710735368A CN107482063A CN 107482063 A CN107482063 A CN 107482063A CN 201710735368 A CN201710735368 A CN 201710735368A CN 107482063 A CN107482063 A CN 107482063A
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 37
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 42
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000005864 Sulphur Substances 0.000 claims abstract description 15
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 15
- 239000011593 sulfur Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000008033 biological extinction Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 92
- 239000010408 film Substances 0.000 description 25
- 230000002708 enhancing effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910008048 Si-S Inorganic materials 0.000 description 1
- 229910006336 Si—S Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The present invention provides a kind of low-temperature polysilicon film transistor, including：Substrate；First buffer layer, set on the substrate；Light shield layer, it is arranged in the first buffer layer, the light shield layer is sulfur-bearing amorphous silicon layer；Second buffer layer, it is arranged on the light shield layer；Active layer, it is arranged in the second buffer layer, the active layer is polysilicon layer.According to the low-temperature polysilicon film transistor of the present invention, sulphur is added in a Si light shield layers, extinction efficiency and photon absorbing intensity when adding a Si as light shield layer, strengthens shaded effect, while do not increase the complexity of technique.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of low-temperature polysilicon film transistor and its manufacture method.
Background technology
LTPS (low temperature polycrystalline silicon) can be tackled in current display panel as a kind of semi-conducting material with high mobility
Higher and higher resolution ratio and aperture opening ratio requirement.The active of TFT-LCD (Thin Film Transistor-LCD) is used as by the use of LTPS
Layer material, the response time can be reduced, reduces energy consumption and improves the rate respectively and contrast of display.But LTPS is to light
With sensitiveness, bottom light source can cause LTPS light induced electrons to produce when reaching LTPS layers, and then influence LTPS TFT characteristics,
Cause threshold voltage vt h unstable and off-state current Ioff increases.So typically making one layer of light shield layer in LTPS bottoms, hide
Photosphere can material selection have Si materials.Si materials to high visible light wavelengths (feux rouges, green glow), then still have 30 because of itself characteristic
~70% or so light passes through.
Therefore, shaded effect can be strengthened by needing a kind of shading layer material badly at present, while also not increase the complexity of technique.
The content of the invention
In view of above mentioned problem of the prior art, it is an object of the invention to provide a kind of low-temperature polysilicon film transistor
And its manufacture method, shaded effect can be strengthened, while also do not increase the complexity of technique.
The present invention provides a kind of low-temperature polysilicon film transistor, including：Substrate；First buffer layer, it is arranged on the base
On plate；Light shield layer, it is arranged in the first buffer layer, the light shield layer is sulfur-bearing amorphous silicon layer；Second buffer layer, it is arranged on
On the light shield layer；Active layer, it is arranged in the second buffer layer.
Wherein, in the light shield layer weight content of sulphur between 0.5% to 5%.
Wherein, the thickness of the light shield layer in 50nm between 100nm.
The present invention also provides a kind of manufacture method of low-temperature polysilicon film transistor, including：Substrate is provided；In the base
First buffer layer is formed on plate；Light shield layer is formed in the first buffer layer, the light shield layer is sulfur-bearing amorphous silicon layer；Institute
State and second buffer layer is formed on light shield layer；Active layer is formed in the second buffer layer.
Wherein, in the light shield layer weight content of sulphur between 0.5% to 5%.
Wherein, forming light shield layer includes using plasma chemical gaseous phase depositing process formation sulfur-bearing amorphous silicon layer.
Wherein, forming light shield layer includes forming amorphous silicon layer, is formed and contained in amorphous silicon layer intermediate ion injection sulphur atom
Sulphur amorphous silicon layer.
The manufacture method of the low-temperature polysilicon film transistor also includes being formed after the sulfur-bearing amorphous silicon layer to institute
State sulfur-bearing amorphous silicon layer and carry out dehydrogenation.
The manufacture method of the low-temperature polysilicon film transistor is also included after carrying out dehydrogenation, to the active layer
Carry out molecular laser Annealing Crystallization processing.
According to the low-temperature polysilicon film transistor of the present embodiment, sulphur is added in a-Si light shield layers, adds a-Si works
For light shield layer when extinction efficiency and photon absorbing intensity, strengthen shaded effect, while do not increase the complexity of technique.
Brief description of the drawings
Fig. 1 is the structural representation for showing the low-temperature polysilicon film transistor according to embodiment.
Fig. 2 and Fig. 3 is the knot for showing manufacture method manufacture low-temperature polysilicon film transistor according to embodiments of the present invention
Structure schematic diagram.
Fig. 4 is the process chart for showing manufacture low-temperature polysilicon film transistor according to embodiments of the present invention.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is only used for explaining the present invention, rather than limitation of the invention.It also should be noted that for the ease of
Describe, part related to the present invention rather than entire infrastructure are illustrate only in accompanying drawing.
Embodiment one
The present embodiment provides a kind of low-temperature polysilicon film transistor.Fig. 1 is to show the low temperature polycrystalline silicon according to embodiment
The structural representation of thin film transistor (TFT).
As shown in figure 1, the low-temperature polysilicon film transistor includes：Substrate 101；On the substrate 101 first slow is set
Layer 102 is rushed, first buffer layer 102 generally includes SiNx film layers, and thickness is in 100nm between 200nm；It is arranged on first buffer layer
Light shield layer 103 on 102, the light shield layer are the a-Si layers of sulfur-bearing (S), thickness in 50nm between 100nm, in light shield layer
The weight content of sulphur is between 0.5% to 5%.
When a-Si is as light shield layer, its light for still having 30~70% or so to high visible light wavelengths (feux rouges, green glow) passes through.
After sulphur (S) is added in a-Si, the band that a-Si is calculated in the simulation of the Si-S keys of formation is changed into from 1.7eV or so
0.551eV。
Main cause is the impurity state for occurring being contributed by foreign atom below a-Si conduction band so that band system narrows.This
Outside, there are S 3s states in conduction band part, and valence band part adds S 3p states.In calculating, the change of such a energy band can be brought
The enhancing of light abstraction width and intensity.The absorption bands of light can be expanded to 250nm-1000nm (visible region 390-
780nm), absorption region includes ultraviolet light-near-infrared region.Extinction efficiency when S addition adds a-Si as light shield layer
And photon absorbing intensity, strengthen shaded effect.
The low-temperature polysilicon film transistor also includes：The second buffer layer 104 being arranged on light shield layer 103, second is slow
Rush layer 104 and generally include SiOx film layers, thickness is in 100nm between 200nm；The active layer being arranged in second buffer layer 104,
Active layer is polysilicon layer, thickness 50nm；The gate insulation layer 106 being arranged on active layer；It is arranged on gate insulation layer 106
On grid layer 107；Inter-level dielectric (ILD) layer 108 being arranged on grid layer 107；And through interlayer dielectric layer 108 and grid
The source-drain layer 109 of insulating barrier 106.
According to the low-temperature polysilicon film transistor of the present embodiment, sulphur is added in a-Si light shield layers, adds a-Si works
For light shield layer when extinction efficiency and photon absorbing intensity, strengthen shaded effect.
Embodiment two
The present embodiment provides a kind of manufacture method of low-temperature polysilicon film transistor.Fig. 2 and Fig. 3 is shown according to this hair
The structural representation of the manufacture method manufacture low-temperature polysilicon film transistor of bright embodiment.Fig. 4 is shown according to of the invention real
Apply the process chart of the manufacture method of example.
As shown in figure 4, this method comprises the following steps.
In step 401, there is provided substrate 101, usually glass substrate, cleaning treatment is carried out to it.
In step 402, first buffer layer 102, using plasma enhancing chemical vapor deposition are formed on substrate
(PECVD) thickness is formed in 100nm to the SiNx film layers between 200nm.
In step 403, light shield layer 103 is formed in first buffer layer, the light shield layer is sulfur-bearing amorphous silicon layer.Specifically
Way is that sulphur is added in non-crystalline silicon such as a-Si, and the method for formation has a variety of, and a kind of mode therein is using PECVD methods
It is another in original equipment to add sulphur source all the way when depositing a-Si, when depositing a-Si, while sulphur is deposited in a-Si, this side
Formula only needs to increase sulphur source in original technique, does not increase the complexity of technique.Another way is to use PECVD side first
Method deposit a-Si layers, then again by the way of ion implanting by sulphur atom ion implanting into a-Si layers, this mode it is excellent
Point is make it that distribution of the sulphur atom in a-Si layers is more uniform, and the change to a-Si band system is more effective, and enhancing a-Si hides
The extinction efficiency and photon absorbing intensity of photosphere.
After light shield layer 103 has been formed, thin film transistor (TFT) is placed in heating furnace, carries out baker (oven) dehydrogenation work
Skill, at a temperature of 390 DEG C -450 DEG C, 30min-60min is heated, dehydrogenation technique can increase merging for S and Si, strengthen S-Si
The content of key, strengthen the extinction efficiency and photon absorbing intensity of a-Si light shield layers.
In step 404, second buffer layer 104, using plasma enhancing chemical vapor deposition are formed on light shield layer 103
Product (PECVD) forms thickness in 100nm to the SiOx film layers between 200nm.
In step 405, active layer 105 is formed in second buffer layer 104, specific way is to use plasma first
Body enhancing chemical vapor deposition (PECVD) forms the amorphous silicon film layer that thickness is 50nm, usually a-Si, and obtained structure is as schemed
Shown in 2, molecular laser annealing (ELA) crystallization process is then carried out, the a-Si on surface is formed p-Si, obtains low temperature polycrystalline silicon
(LTPS) Conventional patterning processing subsequently, is carried out to each film layer, the cross section structure after processing is as shown in Figure 3.
More than each step between ordinal relation be only exemplary, the manufacture method of the present embodiment is not limited to above-mentioned
Step relation.For example, can be after light shield layer 103 has been formed without dehydrogenation technique, but first using plasma strengthens
Chemical vapor deposition (PECVD) forms 105 layers of second buffer layer 104 and active layer, afterwards again puts the thin film transistor (TFT) of formation
In heating furnace, baker dehydrogenation technique is carried out, after the completion of dehydrogenation technique, molecular laser annealing is being carried out to active layer 105
(ELA) crystallization process so that active layer is converted into polysilicon by non-crystalline silicon, is finally being patterned processing to each film layer.
According to the manufacture method of the low-temperature polysilicon film transistor of the present embodiment, sulphur is added in a-Si light shield layers, is increased
Extinction efficiency and photon absorbing intensity when having added a-Si as light shield layer, strengthen shaded effect, while do not increase answering for technique
Miscellaneous degree.
It will be appreciated by those skilled in the art that the invention is not restricted to specific embodiment described here, to art technology
It can carry out various significantly changing, readjust and substituting without departing from protection scope of the present invention for personnel.Therefore,
Although being described in further detail by above example to the present invention, the present invention is not limited only to above implementation
Example, without departing from the inventive concept, other more equivalent embodiments can also be included, and the scope of the present invention is by institute
Attached claim determines.
Claims (9)
1. a kind of low-temperature polysilicon film transistor, including：
Substrate；
First buffer layer, set on the substrate；
Light shield layer, it is arranged in the first buffer layer, the light shield layer is sulfur-bearing amorphous silicon layer；
Second buffer layer, it is arranged on the light shield layer；
Active layer, it is arranged in the second buffer layer, the active layer is polysilicon layer.
2. low-temperature polysilicon film transistor as claimed in claim 1, wherein, the weight content of sulphur exists in the light shield layer
Between 0.5% to 5%.
3. low-temperature polysilicon film transistor as claimed in claim 1, wherein, the thickness of the light shield layer in 50nm extremely
Between 100nm.
4. a kind of manufacture method of low-temperature polysilicon film transistor, including：
Substrate is provided；
First buffer layer is formed on the substrate；
Light shield layer is formed in the first buffer layer, the light shield layer is sulfur-bearing amorphous silicon layer；
Second buffer layer is formed on the light shield layer；
Active layer is formed in the second buffer layer.
5. the manufacture method of low-temperature polysilicon film transistor as claimed in claim 4, wherein, the weight of sulphur in the light shield layer
Content is measured between 0.5% to 5%.
6. the manufacture method of low-temperature polysilicon film transistor as claimed in claim 4, wherein, forming light shield layer includes using
Plasma activated chemical vapour deposition method forms sulfur-bearing amorphous silicon layer.
7. the manufacture method of low-temperature polysilicon film transistor as claimed in claim 4, wherein, forming light shield layer includes being formed
Amorphous silicon layer, sulfur-bearing amorphous silicon layer is formed in amorphous silicon layer intermediate ion injection sulphur atom.
8. the manufacture method of low-temperature polysilicon film transistor as claimed in claims 6 or 7, in addition to form the sulfur-bearing non-
Dehydrogenation is carried out to the sulfur-bearing amorphous silicon layer after crystal silicon layer.
9. after the manufacture method of low-temperature polysilicon film transistor as claimed in claim 8, in addition to progress dehydrogenation,
Molecular laser Annealing Crystallization processing is carried out to the active layer.
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| CN201710735368.6A CN107482063A (en) | 2017-08-24 | 2017-08-24 | Low-temperature polysilicon film transistor and its manufacture method |
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| CN201710735368.6A CN107482063A (en) | 2017-08-24 | 2017-08-24 | Low-temperature polysilicon film transistor and its manufacture method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198862A (en) * | 2017-12-28 | 2018-06-22 | 友达光电（昆山）有限公司 | A kind of low-temperature polycrystalline silicon transistor and its display device |
| CN108807484A (en) * | 2018-06-22 | 2018-11-13 | 武汉华星光电半导体显示技术有限公司 | Flexible display panels and its manufacturing method |
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- 2017-08-24 CN CN201710735368.6A patent/CN107482063A/en active Pending
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| CN101295743A (en) * | 2008-04-15 | 2008-10-29 | 福建钧石能源有限公司 | Thin film, its forming method and solar battery with the same |
| US20130001579A1 (en) * | 2011-06-30 | 2013-01-03 | Lg Display Co., Ltd. | Array Substrate for Fringe Field Switching Mode Liquid Crystal Display and Method of Manufacturing the Same |
| CN104656333A (en) * | 2015-03-18 | 2015-05-27 | 深圳市华星光电技术有限公司 | COA (Color filter On Array) type liquid crystal panel and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198862A (en) * | 2017-12-28 | 2018-06-22 | 友达光电（昆山）有限公司 | A kind of low-temperature polycrystalline silicon transistor and its display device |
| CN108807484A (en) * | 2018-06-22 | 2018-11-13 | 武汉华星光电半导体显示技术有限公司 | Flexible display panels and its manufacturing method |
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