CN107452678A - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
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- CN107452678A CN107452678A CN201710325604.7A CN201710325604A CN107452678A CN 107452678 A CN107452678 A CN 107452678A CN 201710325604 A CN201710325604 A CN 201710325604A CN 107452678 A CN107452678 A CN 107452678A
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- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 230000004048 modification Effects 0.000 claims abstract description 59
- 238000012986 modification Methods 0.000 claims abstract description 59
- 230000011218 segmentation Effects 0.000 claims abstract description 16
- 230000035699 permeability Effects 0.000 claims abstract description 5
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 11
- 230000008859 change Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- High Energy & Nuclear Physics (AREA)
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- Health & Medical Sciences (AREA)
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- Laser Beam Processing (AREA)
Abstract
A kind of processing method of chip is provided, chip can be split to be waned so that not produced at the angle of device chip.The laser beam of the wavelength for chip (W) with permeability is positioned at the inside of chip from the back side of chip (W2) and is irradiated along the 1st spacing track (L1) and the 2nd spacing track (L2) so as to be internally formed modification layer (R) in chip.After the formation of modification layer, acted by the grinding being ground from the back side of chip chip is divided into device chip (DC) along the 1st spacing track and the 2nd spacing track as starting point to modify layer.In the formation of modification layer, by the positioning of the 1st spacing track in the X-axis direction and when irradiating laser beam, stagger according to adjacent each device (D) in the 1st spacing track interior edge Y direction as defined in interval and form modification layer.Thus, the angle of adjacent device chip will not rub on the diagonal in segmentation each other.
Description
Technical field
The present invention relates to the processing method of chip, divides the wafer into multiple device chips.
Background technology
For example, work as using cutting tool to 300【μm】When the chip of the thick thickness of comparison above is cut, deposit
Overleaf chipping becomes the problem of big.Therefore, it is proposed to use the SDBG (Stealth that will be laser machined and grinding is combined
Dicing Before Grinding：Stealthy cutting before grinding) method (for example, referring to patent document 1).In SDBG, edge
The segmentation preset lines irradiation of chip has the laser beam of wavelength of permeability for chip, in the position of the defined depth of chip
Put the modification layer to form intensity decreases.Afterwards, wafer thinning extremely completion thickness is made by being ground to the back side of chip, and
And divide the wafer into each device chip as segmentation starting point to modify layer using grinding force.
Patent document 1：International Publication No. 2003/077295
But when by SDBG chip be internally formed modification layer after be divided into each chip when, due in chip
The adjacent corner of diagonal between be not spaced, so easily being produced in the presence of because the corner of chip is rubbing against one another in corner
Raw the problem of waning.
The content of the invention
The present invention be in view of the point and complete, its object is to provide the processing method of chip, chip can be carried out
Segmentation is waned with not produce at the angle of each device chip.
On the processing method of the chip of the present invention, chip is more on a direction with being formed from front wafer surface
Article the 1st spacing track and the multiple devices for a plurality of 2nd spacing track division being formed on the direction vertical with the 1st spacing track, the crystalline substance
The processing method of piece divides the wafer into device chip using laser processing device along the 1st spacing track and the 2nd spacing track, laser
Processing unit (plant) has：Workbench is kept, it keeps to chip；Laser beam irradiates component, and it is to being maintained at holding workbench
On wafer illumination laser beam；Processing feeding component, it is to keeping workbench and laser beam to irradiate component relatively in X-direction
On be processed feeding；Index feed component, it is to keeping workbench and laser beam irradiation component relatively between spacing track
Every accordingly carrying out index feed in the Y-axis direction；And control member, it is controlled to each inscape, and chip adds
Work method is characterised by thering is the steps：Step is kept, the chip that face side is pasted with to protection band is maintained at holding
On workbench；Layer forming step is modified, after holding step is implemented, by the laser of the wavelength for chip with permeability
Beam is positioned at the inside of chip from the back side of chip and is irradiated along the 1st spacing track and the 2nd spacing track so as in chip
It is internally formed modification layer；And segmentation step, after modification layer forming step is implemented, by being ground the back of the body of the component from chip
Face is ground and makes wafer thinning to completion thickness, and it is starting point along between the 1st to be acted by grinding using the modification layer
Chip is split every road and the 2nd spacing track, in layer forming step is modified, the 1st spacing track is at least being positioned at X-axis side
Upwards and when irradiating laser beam, stagger in the Y-axis direction in the 1st spacing track according to adjacent each device as defined in interval and
Modification layer is formed, to cause the angle of adjacent device chip not rubbed on the diagonal in segmentation each other.
According to the structure, in layer forming step is modified, due to wrong along index feed direction according to adjacent each device
It is spaced as defined in opening and forms discrete modification layer, so can be adjacent along the diagonal of chip in device chip
Interval is formed between angle.It is rubbing against one another thereby, it is possible to reduce the angle of device chip in segmentation step, losing at angle can be reduced
Lack.
In accordance with the invention it is possible to chip is split to be waned so that not produced at the angle of device chip.
Brief description of the drawings
Fig. 1 is the approximate three-dimensional map of the machined object of present embodiment.
Fig. 2 is the approximate three-dimensional map of the laser processing device of present embodiment.
Fig. 3 is the explanation figure for the holding step for showing present embodiment.
Fig. 4 is the explanation figure for the modification layer forming step for showing present embodiment.
Fig. 5 is the explanation figure for the modification layer forming step for showing present embodiment.
Fig. 6 is the explanation figure for the modification layer forming step for showing present embodiment.
Fig. 7 is the explanation figure for the segmentation step for showing present embodiment.
Fig. 8 is the explanation figure for the segmentation step for showing present embodiment.
Label declaration
10：Laser processing device；13：Keep workbench；20：Index feed component；21：Processing feeding component；40：Processing
Head (laser beam irradiation component)；51：Control member；C：Angle；D：Device；DC：Device chip；L1：1st spacing track；L2：Between 2nd
Every road；R：Modify layer；T：Protection band；W：Chip；W1：Front；W2：The back side.
Embodiment
Hereinafter, the processing method of the chip of present embodiment is illustrated referring to the drawings.First, reference picture 1 is to passing through
The chip of the processing method processing of the chip of present embodiment illustrates.Fig. 1 is the diagrammatic perspective of the chip of present embodiment
Figure.
As shown in figure 1, wafer W is shaped generally as discoideus, device layer WA is provided with positive W1.In wafer W just
Formed with a plurality of of direction extension the 1st spacing track L1 and edge that extend in one direction vertical with the 1st spacing track L1 on the W1 of face
2nd spacing track L2.Formed with multiple device D in the region marked off by these the 1st, the 2nd spacing track L1, L2.Also, in crystalline substance
The protection band T for protection device D is pasted with piece W front.As shown in Fig. 2 the lower face side of wafer W is pasted onto bonding sheet
On S, bonding sheet S is bonded on the ring-shaped frame F of ring-type and kept by ring-shaped frame F.
Wafer W has such as 300【μm】Thickness above, divided by the SDBG that will be laser machined and grinding is combined
It is cut into each device chip.In this case, after utilizing Laser Processing to form modification layer in wafer W, added using grinding
Wafer W is ground to completion thickness by work, and wafer W is split as segmentation starting point using modifying layer.In addition, wafer W can be
Semiconductor wafer formed with semiconductor devices such as IC, LSI on the semiconductor substrates such as silicon, GaAs or blue precious
Optical device wafer formed with optical devices such as LED on the inorganic material substrates such as stone, carborundum.
Then, reference picture 2 is said to the laser processing device used in the processing method of the chip of present embodiment
It is bright.Fig. 2 is the approximate three-dimensional map of the laser processing device of present embodiment.In addition, the laser processing device of present embodiment is simultaneously
It is not limited only to the structure shown in Fig. 2.As long as modification layer can be formed in the wafer, then laser processing device can also be arbitrary
Structure.
As shown in Fig. 2 laser processing device 10 is configured to make Laser Processing unit 12 and keeps workbench 13 to relatively move
And wafer W is processed, wherein, the Laser Processing unit 12 irradiates laser beam, and the holding workbench 13 is in its upper table
Wafer W is kept on face.
Laser processing device 10 has the base station 11 of rectangular-shape.Chuck table is provided with the upper surface of base station 11
Travel mechanism 14, the chuck workbench moving arrangement 14 is to keeping workbench 13 to be processed feeding in the X-axis direction and in Y
Index feed is carried out on direction of principal axis.Erect at the rear of chuck workbench moving arrangement 14 and be provided with standing wall portion 16.Arm 17 from
The preceding surface of standing wall portion 16 protrudes, and Laser Processing unit 12 is supported to opposed with keeping workbench 13 on arm 17.
Chuck workbench moving arrangement 14 has：Index feed component 20, it makes holding workbench 13 and Laser Processing single
Member 12 relatively moves in index feed direction (Y direction)；And processing feeding component 21, it makes holding workbench 13 and swashed
Light machining cell 12 relatively moves in processing direction of feed (X-direction).
Index feed component 20 has：A pair of guide rails 23 parallel with Y direction, they are configured in the upper surface of base station 11
On；And the Y-axis workbench 24 of motor driving, it is set in a manner of it can be slided in a pair of guide rails 23.Worked in Y-axis
The lower face side of platform 24 screws togather formed with nut portions (not shown), these nut portions with ball-screw 25.Also, by making and rolling
The rotation driving of drive motor 26 that the one end of ballscrew 25 links, Y-axis workbench 24, processing feeding component 21 and holding work
Make platform 13 to move in the Y-axis direction along guide rail 23.
Processing feeding component 21 has：A pair of guide rails 30 parallel with X-direction, they are configured in Y-axis workbench 24
On upper surface；And movable part 31, it can be moved by guide rail 30 in processing direction of feed (X-direction).Movable part
31 have：X-axis workbench 32, the slip movement of its X-direction are guided by guide rail 30；And linear motor (motor) 33,
It is arranged on the bottom of X-axis workbench 32.Linear motor 33 has a magnet coil (not shown), the magnet coil with guide rail
The magnetic sheet 35 configured between 30 along X-direction is opposed.On magnet coil, such as three-phase alternating current is staggered phase and lead to successively
Electricity, formed make linear motor 33 itself and X-axis workbench 32 along as X-direction move back and forth that direction moves move
Magnetic field.In addition, processing feeding component 21 be not limited in said structure, such as can also be changed to as index feed component 20 that
Sample has used the structure of the ball-screw of rotation driving.
Maintained on the upper surface of X-axis workbench 32 and keep workbench 13.Keep workbench 13 to be formed as discoideus, borrow
Help θ workbench 38 and be arranged in a manner of it can rotate on the upper surface of X-axis workbench 32.Keeping the upper table of workbench 13
By porous ceramic film material formed with adsorption plane on face.Keeping being provided with 4 fixtures via supporting arm around workbench 13
Portion 39.4 clamp portions 39 are carried out by air actuator driving (not shown) from surrounding to the ring-shaped frame F around wafer W
Grip.
Laser Processing unit 12 has the processing head 40 as laser beam irradiation component for the front end for being arranged on arm 17.
The optical system of Laser Processing unit 12 is provided with arm 17 and processing head 40.Processing head 40 is by collector lens to never scheming
The oscillator shown vibrates the laser beam and enters line convergence, irradiates laser beam to the wafer W being maintained on holding workbench 13 and enters
Row Laser Processing.In this case, the wavelength of laser beam has permeability for wafer W, laser beam quilt in optical system
It is adjusted to be positioned at the inside of wafer W.
By the irradiation of the laser beam and in the modification layer R (Hes of reference picture 4 being internally formed as segmentation starting point of wafer W
Fig. 5).Modification layer R refers to make the density of the inside of wafer W, refractive index, mechanical strength or other things because of the irradiation of laser beam
Reason characteristic becomes the state different from surrounding and intensity is than region that surrounding reduces.Modification layer R is, for example, melt process region, split
Line region, insulation breakdown region, variations in refractive index region or the region that they mix.Shone from processing head 40
The laser beam penetrated can be controlled to the height for the spot position for forming modification layer R.
The control member 51 being uniformly controlled to each inscape of device is provided with laser processing device 10.Control
Component 51 is made up of the processor for performing various processing.Control member 51 is inputted from the various detectors for eliminating diagram
Testing result.From control member 51 to drive motor 26, the output control signal such as linear motor 33, processing head 40.
Hereinafter, reference picture 3 illustrates to Fig. 7 to the processing method of chip.Fig. 3 is the holding step for showing present embodiment
Rapid explanation figure, Fig. 4 to Fig. 6 are the explanation figures for the modification layer forming step for showing present embodiment, and Fig. 7 and Fig. 8 are to show point
Cut the explanation figure of step.In addition, in the present embodiment, although to a progress by the processing method of chip suitable for SDBG
Explanation, but can also be applied to the other processing methods split to modify layer as starting point in the inside of chip.
As shown in figure 3, implement to keep step first.In step is kept, protection band T wafer W is pasted with across protection
Adsorbed are maintained at of band T is kept on workbench 13.
As shown in Figure 4 and Figure 5, modification layer forming step is implemented after holding step is implemented.Step is formed in modification layer
In rapid, wafer W is positioned to such as the 1st spacing track L1 and X-direction put down by moving holding workbench 13, rotating first
Row, the 2nd spacing track L2 are parallel with Y direction.Then, processing head 40 is positioned in relative to the wafer W on holding workbench 13
The 1st spacing track L1 parallel with X-direction.Afterwards, while laser beam is irradiated to the back side W2 sides of wafer W, while making holding work
Make platform 13 and processing head 40 abreast to relatively move with X-direction (processing is fed).Thus, irradiate and swash along the 1st spacing track L1
Light beam, in the modification layer R being internally formed along the 1st spacing track L1 of wafer W.
After the 1st spacing track L1 along object forms modification layer R, stop the irradiation of laser beam, make holding workbench
13 and interval of the processing head 40 in the Y-axis direction with the 1st spacing track L1 accordingly relatively move (index feed).Thereby, it is possible to
Processing head 40 is set to be directed at the 1st spacing track L1 adjacent with the 1st spacing track L1 of object.
Then, same modification layer R is formed along the 1st adjacent spacing track L1.Repeat the action and along in X-direction
The 1st whole spacing track L1 of upper extension form modification layer R, afterwards, holding workbench 13 is rotated by 90 ° and edge around rotary shaft
The 2nd spacing track L2 extended in the Y-axis direction and form modification layer R.
In layer R is modified, modified according to the pulse distance of the wavelength based on laser beam, be formed as indulging in sectional view
The long oval continuous arrangement in processing direction of feed (X-direction).Can carry out that laser beam carried out over and over again changes
Matter layer R formation, such as in the case where carrying out twice, in initial modification layer R1 formation, by focal point in Fig. 4
Upper-lower position is positioned at by optical device wafer W positive W1 position and irradiates laser beam.When the upper-lower position in the focal point
After foring initial modification layer R1 along each spacing track L1, L2 of whole, focal point is set periodically to be moved upward.So
Afterwards, the modification layer R2 of the 2nd time formation is carried out in the same manner as initial modification layer R1 formation.The forming position is set in most
First modification layer R1 back side W2 sides (upside) separate the position of defined distance.Thus, from the positive W1 sides of wafer W to the back of the body
Two layers modification layer R1, R2 are formed in the region of face W2 sides, in other words, in being internally formed along each spacing track L1, L2 for wafer W
Split starting point.
Here, in layer forming step is modified, as shown in fig. 6, the 1st spacing track L1 parallel with X-direction is not at
It is discontinuously formed on straight line.On the 1st spacing track L1 formation, first in processing head 40 relative to the 1st spacing track
In L1 positioning, for example, setting focal point to cause the position of Y direction to be in Fig. 6 position Y1.Also, in adding for wafer W
In work feeding, repeat the irradiation of laser beam every 1 device D in the X-axis direction and irradiation stops.Thus, at the 1st interval
Y direction position Y1 in road L1, it is alternately arranged according to along the adjacent each device D of X-direction formed with modification layer R's
Region and the region without formation modification layer R.
After modification layer R is formd in Y direction position Y1, index feed is carried out to wafer W so that focal point is the 1st
Stagger in the Y-axis direction according to interval a in spacing track L1 and focal point is set in Y direction position Y2.Afterwards, while in X
Feeding is processed on direction of principal axis to wafer W, while in the region without formation modification layer R in the Y1 of Y direction position, edge
Y direction position Y2 irradiates laser beam.Therefore, in the irradiation of the laser beam, also repeated in the X-axis direction every 1 device D
The irradiation and irradiation for carrying out laser beam stop.In other words, in Y direction position Y2, according to along the adjacent each device of X-direction
D is also alternately arranged the region formed with modification layer R and the region without formation modification layer R.Thus, it will be formed in Y-axis side
Modification layer R to position Y1 and it is formed at Y direction position Y2 modification layer R and is combined, according to along adjacent every of X-direction
Individual device D the 1st spacing track L1 interior edges Y direction according to interval a stagger and formed with modification layer R.
After such modification layer R is formd along the 1st whole spacing track L1 extended in the X-axis direction, as above
State and form modification layer R along the 2nd spacing track L2 extended in the Y-axis direction like that.By the modification layer R for making the 2nd spacing track L2
Be formed as continuous linear as illustrated, configured each other along the adjacent device D of Y direction angle (corner) C in figure 6
Roughly the same position, and it is positioned apart according to interval a in the Y-axis direction each other along the adjacent device D of X-direction angle C.Edge
The adjacent device D of device D diagonal angle C is not at identical position and positioned apart each other.
Here, on being spaced a, preferably wider in the range of the 1st spacing track L1.Formation position as modification layer R
Y direction position Y1, the Y2 put, it is identical distance preferably to make their width centers away from the 1st spacing track L1, being capable of example
Show interval a being set to 10~40【μm】, by from the 1st spacing track L1 width center to Y direction position Y1, Y2 away from
From being set to 5~20【μm】.
Also, the modification layer R in the present embodiment, being formed at the 2nd spacing track L2 forms the width in the 2nd spacing track L2
Direction center.Therefore, the top and bottom in device D Fig. 6 and the 2nd spacing track L2 adjacent with them modification layer R
The distance between it is roughly the same.Accordingly, with respect to pad for being electrically connected with device D etc., along upper in device D Fig. 6
Lower both ends form and then can similarly carry out the installation at upper end and the installation at lower end and can keep workability well.
As shown in Figure 7 and Figure 8, segmentation step is implemented after modification layer forming step is implemented.It is brilliant in segmentation step
Piece W is maintained on the chuck table 61 of grinding attachment 60 across protection band T.Emery wheel (grinding component) 62 is ground while rotation
It is thin by making the back side W1 rotating contacts of grinding emery wheel 62 and wafer W be ground wafer W while close with chuck table 61
Change to completion thickness.Grinding force is acted on to make crackle to change to modification layer R1, R2 from grinding emery wheel 62 by grinding action
Matter layer R1, R2 are that starting point extends on the thickness direction of wafer W.Thus, wafer W is along the 1st spacing track L1 and the 2nd spacing track L2
It is divided, forms each device chip DC (not shown in the figure 7).
According to such embodiment, due to the 1st spacing track L1 modification layer R is formed as described above, make along device D's
The adjacent angle C of diagonal is positioned apart from each other, so can not make adjacent device chip DC's in segmentation step
Angle rubs on the diagonal each other.Here, for example, particularly using crystallographic direction to be tilted relative to each spacing track L1, L2
In the case of the wafer W in 45 ° of direction, the easily diagonally adjacent generation because of grinding force and in device chip DC wanes.
In the present embodiment, due to being separated from each other along the adjacent device D of diagonal angle C without rubbing, so even if
Crystallographic direction tilts as described above, can also prevent angle C wane or crackle.Thereby, it is possible to along each spacing track L1,
Wafer W is divided into each device chip DC by L2 well.
In addition, the present invention is not limited in above-mentioned embodiment, various changes can be implemented.In the above-described embodiment,
The size or shape that illustrate in the accompanying drawings, direction etc. are not limited to that, can be entered in the range of the effect of the present invention is played
The appropriate change of row.As long as in addition, it just can implement suitably to change in the range of the purpose of the present invention is not departed from.
For example, in the above-described embodiment, the 1st spacing track L1 modification layer R turns into non-according to adjacent each device D-shaped
Continuously, but the 2nd spacing track L2 can also be identically formed to be discontinuous.In this case, can also make along the diagonal of device D
The adjacent angle C in line direction is separated from each other.In addition, in device D, it is formed in joint sheet only along between the 1st spacing track L1 and the 2nd
In the case of the position of a road L2 side, the shape as described above in spacing track L1, L2 of a side of joint sheet is not formed
Split into as discrete modification layer R.Thus, the distance of the outer rim of joint sheet and device chip keeps constant, energy
The treatment conditions such as the bonding station of enough joint sheets of not adjusting the distance are changed and engaged.
As described above, the present invention has and cracks or wane and right on device chip that will not be after singulation
Chip carries out the effect of good Ground Split, especially the chip to semiconductor wafer or optical device wafer to be divided into each chip
Processing method is useful.
Claims (1)
1. a kind of processing method of chip, the chip has on front wafer surface to be formed between the on a direction a plurality of 1st
Every multiple devices that road and a plurality of 2nd spacing track being formed on the direction vertical with the 1st spacing track divide, the chip adds
The chip is divided into device chip by work method using laser processing device along the 1st spacing track and the 2nd spacing track, and this swashs
Optical machining device has：Workbench is kept, it keeps to the chip；Laser beam irradiates component, and it is to being maintained at the holding
Wafer illumination laser beam on workbench；Processing feeding component, it is relative that it irradiates component to the holding workbench with the laser beam
Ground is processed feeding in the X-axis direction；Index feed component, it is relative that it irradiates component to the holding workbench with the laser beam
The interval on ground and the spacing track accordingly carries out index feed in the Y-axis direction；And control member, it enters to each inscape
Row control, the processing method of the chip are characterised by thering is the steps：
Step is kept, the chip that face side is pasted with to protection band is maintained on holding workbench；
Layer forming step is modified, after the holding step is implemented, by the laser beam of the wavelength for chip with permeability
The inside of chip is positioned at from the back side of chip and is irradiated along the 1st spacing track and the 2nd spacing track so as in chip
Be internally formed modification layer；And
Segmentation step, after the modification layer forming step is implemented, it is ground by being ground component from the back side of the chip
And make this it is wafer thinning to completion thickness, and by grinding act using it is described modification layer be starting point along the 1st spacing track with
2nd spacing track is split to chip,
In the modification layer forming step, at least the positioning of the 1st spacing track in the X-axis direction and when irradiating laser beam, is being pressed
The adjacent each device of photograph is spaced as defined in staggering in the Y-axis direction in the 1st spacing track and forms modification layer, to cause phase
The angle of adjacent device chip will not rub on the diagonal in segmentation each other.
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| CN107706150A (en) * | 2016-08-09 | 2018-02-16 | 株式会社迪思科 | The processing method of chip |
| CN110524730A (en) * | 2018-05-24 | 2019-12-03 | 半导体元件工业有限责任公司 | Tube core sawing segmenting system and method |
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| CN113039035A (en) * | 2018-10-30 | 2021-06-25 | 浜松光子学株式会社 | Laser processing apparatus |
| US11897056B2 (en) | 2018-10-30 | 2024-02-13 | Hamamatsu Photonics K.K. | Laser processing device and laser processing method |
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| JP2017204607A (en) | 2017-11-16 |
| KR102226645B1 (en) | 2021-03-10 |
| CN107452678B (en) | 2021-07-09 |
| TWI721152B (en) | 2021-03-11 |
| KR20170128104A (en) | 2017-11-22 |
| JP6636384B2 (en) | 2020-01-29 |
| TW201806011A (en) | 2018-02-16 |
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