CN107425236A - The integrated single-pole double-throw switch (SPDT) of filtering and the integrated single-pole double-throw switch (SPDT) of microstrip line filtering - Google Patents
The integrated single-pole double-throw switch (SPDT) of filtering and the integrated single-pole double-throw switch (SPDT) of microstrip line filtering Download PDFInfo
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- CN107425236A CN107425236A CN201710451497.2A CN201710451497A CN107425236A CN 107425236 A CN107425236 A CN 107425236A CN 201710451497 A CN201710451497 A CN 201710451497A CN 107425236 A CN107425236 A CN 107425236A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
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Abstract
The present invention relates to one kind to filter the integrated integrated single-pole double-throw switch (SPDT) of single-pole double-throw switch (SPDT) and microstrip line filtering, and the intergrade parallel LC resonance circuit that a shared stage parallel LC resonance circuit for being not loaded with on-off circuit and two groups of loaded switches circuits are connected by four coupled capacitors forms two bars circulation paths with final stage parallel LC resonance circuit；Under the opposite DC offset voltage control of absolute value identical polar, one bars circulation path is in low-loss, high selectivity band-pass filtering property, another bars circulation path is in high degree of suppression stopband characteristic in wider frequency range, so as to form the integrated single-pole double-throw switch (SPDT) function of filtering.The present invention has advantages below：Fusion switch and two kinds of component functions of wave filter, circuit is simple and compact dimensions, conducting state have precipitous broadband band-pass filtering property, and there is cut-off state high degree of suppression to hinder characteristic entirely, there is high-isolation between port, there is higher suppression function in wider frequency range to harmonic wave.
Description
Technical field
The invention belongs to switch and wave filter technology, it is related to a kind of integrated single-pole double-throw switch (SPDT) of filtering and microstrip line filtering collection
Into single-pole double-throw switch (SPDT).
Background technology
Switch is time division multiplexing, the critical component of the switch beam formation system radio frequency such as array and Multiinputoutput front end
One of, for realizing that transceiver channel shares common antenna, reduce the volume and redundancy of radio-frequency front-end.Switch is also numerical control phase shift
The key components of device, numerical-control attenuator etc..Traditional switch designs focus mainly on working frequency and damaged with bandwidth, insertion
The solution of the problems such as consumption, isolation, port Impedance matching, power capacity, switching speed, switch life and circuit size, often
Implementation mainly include mechanical switch, ferrite switch, solid-state switch p-i-n diode, FET etc. and
RF mems switch etc..Wherein, solid-state switch has high feasibility, service life length, conversion time is fast, is easy to collect
Into being most widely used the advantages that, mid power capacity.Although traditional switch can effectively solve the demand, working band
Steepness is poor, can not provide enough Out-of-band rejections.Therefore, switch usually requires to be cascaded with wave filter to select to pass through
Desired signal, suppress out-of-band interference and noise, and then improve the signal to noise ratio of system.Present most of design methods are all to switch
Independent design is separated with wave filter, then carrying out cascade with 50 Ω characteristic impedances lines forms switch and filter function.This design
Method not only causes circuit area increase, signal transmission mismatch loss increase, is also unfavorable for the saving of system cost.In fact,
Industrial quarters and academia, which have begun working on, is cooperateed with working band identical device or Combined design.Therefore, by
In this design philosophy, the switch for carrying out Combined design formation integrating filtering function with wave filter will be switched by, which studying, effectively to solve
Above mentioned problem.
The content of the invention
Technical problems to be solved
In order to avoid the shortcomings of the prior art, the present invention proposes a kind of integrated single-pole double-throw switch (SPDT) of filtering and microstrip line
The integrated single-pole double-throw switch (SPDT) of filtering.
Technical scheme
The integrated single-pole double-throw switch (SPDT) of one kind filtering, it is characterised in that including three resonant inductance L-Lt, three resonant inductances
Lt, two resonant inductance L, two resonant capacitance C, two resonant capacitance Cm, a resonant capacitance Cp, four coupled capacitor Ce, four
Individual capacitance Cb, four choking resistance RSW, four semiconductor diode DSW11、DSW12、DSW21And DSW22, two direct current biasings
Voltage VSW1、VSW2；Described resonant inductance L-LtWith resonant inductance LtWith series relationship；Four coupled capacitor CeForm one
Series circuit, Centroid pass through by a resonant capacitance CpWith a resonant inductance L-Lt, a resonant inductance LtWhat is formed is total to
It is grounded with level parallel LC resonance circuit, wherein resonant inductance L-LtWith resonant inductance LtMiddle node, which is formed, shares the first input
Output port 1；One end of series circuit passes through by a resonant capacitance C and a resonant inductance L-Lt, a resonant inductance LtStructure
Into final stage parallel LC resonators ground connection and semiconductor diode DSW12Negative polarity end connects a capacitance CbAfter be grounded, separately
One end passes through by a resonant capacitance C and a resonant inductance L-Lt, a resonant inductance LtThe final stage parallel LC resonators of composition
Ground connection and semiconductor diode DSW22Negative polarity end connects a capacitance CbAfter be grounded, wherein semiconductor diode DSW12Just
Polar end and capacitance CbBetween node pass through a choking resistance RSWConnect direct current biasing VSW1, semiconductor diode
DSW22Positive ends and capacitance CbBetween node pass through a choking resistance RSWConnect direct current biasing VSW2；It is described with
Semiconductor diode DSW12Adjacent resonant inductance L-LtWith resonant inductance LtMiddle node forms the second input/output port 2；
It is described with semiconductor diode DSW22Adjacent resonant inductance L-LtWith resonant inductance LtIt is defeated that middle node forms the 3rd input
Exit port 3；With semiconductor diode DSW12Two adjacent coupled capacitor CeBetween node pass through by a resonant capacitance Cm、
The intergrade parallel LC resonance circuit ground connection and semiconductor diode D that one resonant inductance L is formedSW11Negative polarity end connects one
Capacitance CbAfter be grounded, wherein semiconductor diode DSW11Positive ends and capacitance CbBetween node gripped by one
Leakage resistance RSWConnect DC offset voltage VSW1；With semiconductor diode DSW22Two adjacent coupled capacitor CeBetween node
By by a resonant capacitance Cm, the intergrade parallel LC resonance circuit ground connection that forms of a resonant inductance L and the pole of semiconductor two
Pipe DSW21Negative polarity end connects a capacitance CbAfter be grounded, wherein semiconductor diode DSW21Positive ends and capacitance
CbBetween node pass through a choking resistance RSWConnect direct current biasing VSW2；Described DC offset voltage VSW1With VSW2To be exhausted
To being worth equal and opposite polarity voltage；Work as VSW1For negative, VSW2For timing, semiconductor diode DSW11、DSW12Cut-off, semiconductor
Diode DSW21、DSW22Conducting, second port 2 is turned on, the 3rd port 3 is ended, and signal is between first port 1 and second port 2
Flow in or out；Work as VSW1For just, VSW2During to bear, semiconductor diode DSW11、DSW12Conducting, semiconductor diode DSW21、DSW22
Cut-off, second port 2 is ended, the 3rd port 3 turns on, and signal flows in or out between the port 3 of first port 1 and the 3rd.
It is a kind of to realize that quasi- lumped capacity realizes that the integrated hilted broadsword of filtering described in claim 1 is double with inductance element using microstrip line
The structure of throw switch, it is characterised in that 3, three SMA of medium substrate including metallic cavity 1 and in metallic cavity 1 connect
2, four semiconductor diode D of jointSW11、DSW12、DSW21And DSW22, four choking resistance RSW, four capacitance Cb, etching
In the circuit layer of medium substrate upper surface and the ground metal layer of medium substrate lower surface；Described etching is in medium substrate upper table
The circuit layer in face includes the interdigital line of three 50 Ω input and output feeder lines 4, four 5, five bending ground connection high resistant lines 6-1-1,6-1-
2nd, 6-2-1,6-2-2,6-3, five fan-shaped minor matters line 7-1-1,7-1-2,7-2-1,7-2-2,7-3 and ground via 8；Three
SMA connectors 2 are located at three sides of medium substrate 3；Four interdigital lines 5 are four coupled capacitor Ce, form a series circuit；
It is resonant capacitance C that centre position, which connects fan-shaped minor matters line 7-3,p, bending ground connection high resistant line 6-3 is resonant inductance L-LtWith resonance electricity
Feel Lt, bend A1 points in the middle part of ground connection high resistant line 6-3 broken lines is by 50 Ω input and output feeder lines, one SMA connector of connection
It is resonant inductance L that port 1, wherein A1 point are grounded high resistant line to the bending between ground via 8t；Form one end of series circuit
Fan-shaped minor matters line 7-1-1 and bending ground connection high resistant line 6-1-1 are connected, fan-shaped minor matters line 7-1-1 is resonant capacitance C, by partly leading
Body diode DSW12Negative polarity end connects a capacitance CbAfter be grounded, wherein semiconductor diode DSW12Positive ends with every
Straight electric capacity CbBetween node pass through a choking resistance RSWConnect direct current biasing VSW1；Bending ground connection high resistant line 6-1-1 is resonance
Inductance L-LtWith resonant inductance Lt, it is end that A2 points in centre position connect a SMA connector by a 50 Ω input and output feeder lines
Mouth 2, wherein A2 points to the bending ground connection high resistant line between ground via are resonant inductance Lt；The other end connection fan of series circuit
Shape minor matters line 7-1-2 and bending ground connection high resistant line 6-1-2, fan-shaped minor matters line 7-1-2 are resonant capacitance C, pass through the pole of semiconductor two
Pipe DSW22Negative polarity end connects a capacitance CbAfter be grounded, wherein semiconductor diode DSW22Positive ends and capacitance
CbBetween node pass through a choking resistance RSWConnect direct current biasing VSW2；It is resonant inductance L-L to bend high resistant line 6-1-2tWith
Resonant inductance Lt, it is port 3 that A3 points in centre position connect a SMA connector by a 50 Ω input and output feeder lines, wherein
It is resonant inductance L that A3 points are grounded high resistant line to the bending between ground viat；With semiconductor diode DSW12Two adjacent friendships
Refer to line centre position and connect fan-shaped minor matters line 7-2-1 and bending ground connection high resistant line 6-2-1, and pass through semiconductor semiconductor diode
DSW11Negative polarity end connects a capacitance CbAfter be grounded, semiconductor diode DSW11Positive ends and capacitance CbBetween
Node pass through a choking resistance RSWConnect direct current biasing VSW1；Wherein：Fan-shaped minor matters line 7-2-1 is resonant capacitance Cm, bending
It is resonant inductance L to be grounded high resistant line 6-2-1；With semiconductor diode DSW22The two adjacent interdigital centre position of line 5 connection fans
Shape minor matters line 7-2-2 and bending ground connection high resistant line 6-2-2 simultaneously passes through semiconductor semiconductor diode DSW21Negative polarity end connection one
Individual capacitance CbAfter be grounded, semiconductor diode DSW21Positive ends and capacitance CbBetween node pass through a chokes
Resistance RSWConnect direct current biasing VSW2；Wherein：Fan-shaped minor matters line 7-2-2 is resonant capacitance Cm, bending ground connection high resistant line 6-2-2 is
Resonant inductance L；Described DC offset voltage VSW1With VSW2For absolute value is equal and opposite polarity voltage；Work as VSW1To bear,
VSW2For timing, semiconductor diode DSW11、DSW12Cut-off, semiconductor diode DSW21、DSW22Conducting, port 2 turns on, port 3
Cut-off, signal flow in or out between port 1 and port 2；Work as VSW1For just, VSW2During to bear, semiconductor diode DSW11、
DSW12Conducting, semiconductor diode DSW21、DSW22Cut-off, port 2 is ended, port 3 turns on, and signal is between port 1 and port 3
Flow in or out.
Five described bending ground connection high resistant lines 6-1-1,6-1-2,6-2-1,6-2-2,6-3 are wide and isometric.
Beneficial effect
A kind of filtering proposed by the present invention integrates single-pole double-throw switch (SPDT) and the integrated single-pole double-throw switch (SPDT) of microstrip line filtering, uses
Semiconductor diode, capacitance, choking resistance and DC offset voltage form on-off circuit, then pass through four coupled capacitors
Connect the intergrade parallel connection LC of a shared stage parallel LC resonance circuit for being not loaded with on-off circuit and two groups of loaded switches circuits
Resonance circuit forms two bars circulation paths with final stage parallel LC resonance circuit；It is inclined in the opposite direct current of absolute value identical polar
Put under voltage control, a bars circulation path is in low-loss, high selectivity band-pass filtering property, another bars circulation path
It is in high degree of suppression stopband characteristic in wider frequency range, so as to form the integrated single-pole double-throw switch (SPDT) function of filtering.This filter
Ripple, which integrates single-pole double-throw switch (SPDT), has flexible circuit implementation, a kind of to realize that quasi- lumped capacity and inductance come using microstrip line
Realize that described filtering integrates single-pole double-throw switch (SPDT) and realizes resonant inductance using bending ground connection high resistant line, it is real using fan-shaped minor matters line
Existing resonant capacitance, coupled capacitor is realized using interdigital line.The present invention has advantages below：Fusion switch and two kinds of first devices of wave filter
Part function, circuit is simple and compact dimensions, conducting state have precipitous broadband band-pass filtering property, and cut-off state has high press down
System hinders characteristic entirely, has high-isolation between port, there is higher suppression function in wider frequency range to harmonic wave.The present invention can
Reduce impedance mismatching loss, requirement on machining accuracy is low, realizes that simply low cost is convenient for production.
Compared with prior art, its advantage is the present invention with beneficial effect：
1st, the function of fusion switch and two kinds of components of wave filter, so as to reduce impedance mismatching loss；
There is precipitous band-pass filtering property when the 2nd, filtering integrated single-pole double-throw switch (SPDT) conducting, and passband relative bandwidth can be big
In 30%；
There is high degree of suppression and high-isolation characteristic when the 3, filtering integrated single-pole double-throw switch (SPDT) cut-off；
4th, filter integrated single-pole double-throw switch (SPDT) has high degree of suppression function in wider frequency range to harmonic wave；
5th, the circuit complexity of the integrated single-pole double-throw switch (SPDT) of whole filtering is low, cost of implementation is small, can be adopted according to working frequency range
Realized with flexible technique.
Brief description of the drawings
Fig. 1 is a kind of integrated single-pole double-throw switch (SPDT) circuit with lumped element schematic diagram of filtering；
Fig. 2 is to realize quasi- lumped capacity and inductance element using microstrip line to realize the integrated single-pole double-throw switch (SPDT) of the filtering
Structure chart；
Fig. 3 is a kind of preferable three rank band pass filter circuit schematic diagrams；
Fig. 4 is the typical frequencies response of embodiment 1.
Embodiment
In conjunction with embodiment, accompanying drawing, the invention will be further described：
Referring to the drawings 3, it is contemplated that filtering of the present invention is equivalent to one when integrating single-pole double-throw switch (SPDT) conducting state
Three rank bandpass filters, specific implementation of the invention is first since a rank bandpass filter of ideal three.Because admittance is inverted
The negative capacitance characteristic of device can be absorbed by electric capacity in adjacent resonators, resonant inductance L in accompanying drawing 3i-Lit, resonant inductance Lit, resonance
Electric capacity CiWith Absorption Capacitance CieForm final stage parallel LC resonators, resonant inductance Li-Lit, resonant inductance Lit, resonant capacitance CmWith
Absorption Capacitance CieForm intergrade parallel LC resonators.The resonant frequency f of final stage parallel LC resonatorsesWith intergrade parallel connection LC
The resonant frequency f of resonatormsRespectively：
Coupled capacitor CieCoefficient of coup M corresponding to the admittance inversor of formation can be determined by following formula：
Wherein f0For the centre frequency of three rank bandpass filters.50 Ω feeder lines are connected to resonant inductance Li-LitWith resonance electricity
Feel LitBetween be used for input and output, resonant inductance LitSize determine final stage parallel LC resonators external sort factor QeIt is big
It is small, and QeIt can be calculated by following formula：
Wherein
The centre frequency of band-pass filtering property during for given filtering integrated single-pole double-throw switch (SPDT) conducting, ripple bandwidth and
Return loss, required coefficient of coup M and external sort factor Q can be calculated according to coupled resonator filter design theorye。
If given resonant inductance LiInitial value size, corresponding C can be calculated by formula 1, formula 2i、CimAnd Cie；Phase can be calculated by formula 3
The L answeredit.Then, L=L is madei、Lt=Lit, C=Ci、Cm=CimAnd Cp=CiAs the first of the integrated single-pole double-throw switch (SPDT) of filtering
Initial value, two rank bandpass filters of ideal three are connected and composed into the form of accompanying drawing 1.Now, resonant inductance L-Lt, resonant inductance LtWith
Resonant capacitance CpA shared stage parallel LC resonators are formed, port 1 is connected to resonant inductance L-Lt, resonant inductance LtBetween structure
Into shared input/output port；Resonant inductance L and resonant capacitance CmForm two intergrade parallel LC resonators；Resonant inductance L-
Lt, resonant inductance LtTwo final stage parallel LC resonators are formed with resonant capacitance C, port 2, port 3 are connected to resonant inductance L-Lt
With resonant inductance LtForm and share input/output port.Semiconductor diode DSW11、DSW12、DSW21And DSW22, capacitance Cb, grip
Leakage resistance RSWWith DC offset voltage VSW1And VSW2Four on-off circuits are collectively formed, and are carried in two intergrade parallel connections respectively
On LC resonators and two final stage parallel LC resonators, for controlling their working frequency.Capacitance CbPlay stopping direct current, lead to
Alternating current function；Big resistance choking resistance RSWIt is semiconductor diode D for controlling exchangeSW11、DSW12、DSW21And DSW22There is provided straight
Flow bias current.As DC offset voltage VSW1And VSW2When connecing positive electricity, semiconductor diode DSW11、DSW12、DSW21And DSW22Lead
Logical, it can be equivalent to a small value conducting resistance Ron, the more big then conducting resistance R of DC bias currentonIt is smaller；When direct current biasing electricity
Press VSW1And VSW2When connecing negative electricity, semiconductor diode DSW11、DSW12、DSW21And DSW22Cut-off, it can be equivalent to the reverse-biased electric capacity of small value
Coff.Coupled capacitor CeConnected as admittance inversor in shared stage parallel LC resonators and the right and left loaded switches circuit
Intercaste parallel LC resonators and final stage parallel LC resonators form two signal circulation paths.In view of posting for semiconductor diode
Raw parameter effects and cut-off path remnants susceptance are in capacitive, can be to the resonant capacitance C in accompanying drawing 1, resonant capacitance CmAnd resonance
Electric capacity CpCalculation formula amendment it is as follows：
C≈Ci-Coff 4a
Cm≈Cim-Coff 4b
Cp≈Ci-Ce 4b
Work as VSW1Meet negative voltage, VSW2When connecing positive voltage, semiconductor diode DSW11And DSW12Cut-off, semiconductor diode DSW21With
DSW22Turn on, the loaded switches element intergrade parallel LC resonators, loaded switches element final stage parallel connection LC in the path of port 3 are humorous
Shake device and shared stage parallel LC resonators off resonance, in the full resistance characteristic with high degree of suppression, port 3 is ended；In the path of port 2
Loaded switches element intergrade parallel LC resonators, loaded switches element final stage parallel LC resonators and shared stage parallel LC resonance
Device forms band-pass filtering property, and signal can flow in or out between port 1 and port 2.Work as VSW1Meet positive voltage, VSW2Connect negative electricity
During pressure, semiconductor diode DSW11And DSW12Conducting, semiconductor diode DSW21And DSW22End, the loading in the path of port 2 is opened
Element intergrade parallel LC resonators, loaded switches element final stage parallel LC resonators and shared stage parallel LC resonators are closed to lose
Humorous, in the full resistance characteristic with high degree of suppression, port 2 is ended；Loaded switches element intergrade parallel connection LC in the path of port 3 is humorous
Shake device, loaded switches element final stage parallel LC resonators and shared stage parallel LC resonators composition band-pass filtering property, and signal can
Flowed in or out between port 1 and port 3.
Integrated single-pole double-throw switch (SPDT) is filtered in accompanying drawing 1, it includes one by a resonant inductance L-Lt, a resonant inductance
LtWith a resonant capacitance CpThe shared stage parallel LC resonance circuit of composition, two by a resonant inductance L and resonant capacitance CmStructure
Into intergrade parallel LC resonance circuit, two resonant inductance L-Lt, a resonant inductance LtWith a resonant capacitance C structure
Into final stage parallel LC resonance circuit, four coupled capacitor Ce, by four semiconductor diode DSW11、DSW12、DSW21And DSW22, four
Individual choking resistance RSW, four capacitance CbWith two DC offset voltage VSW1And VSW2Four on-off circuits formed.Three
50 Ω feeder lines are connected to resonant inductance L-LtWith resonant inductance LtBetween form input/output port 1, port 2 and port 3.Four
On-off circuit is carried on two intergrade parallel LC resonance circuits and two final stage parallel LC resonance circuits, for controlling its work
Working frequency.One shared stage parallel LC resonance circuit for being not loaded with on-off circuit passes through coupled capacitor CeConnect two groups of difference direct currents
The intergrade parallel LC resonance circuit and final stage parallel LC resonance circuit of the loaded switches circuit of bias voltage form two bars
Circulation path；Absolute value identical polar and opposite DC offset voltage control under, a bars circulation path in low-loss,
High selectivity band-pass filtering property, another bars circulation path are in high degree of suppression stopband characteristic in wider frequency range,
So as to form the integrated single-pole double-throw switch (SPDT) function of filtering.Band-pass filtering property during conducting can use classical coupled resonators to filter
Device design theory comprehensive Design, and the exponent number of band-pass filtering property can be by reducing and increasing the intergrade of loaded switches circuit simultaneously
Join the control of LC resonance circuits.Signal circulation path quantity can be by decreasing or increasing by coupled capacitor CeOnly one group of connection
Or the intergrade parallel LC resonance circuit and final stage parallel LC resonance circuit of multigroup loaded switches circuit are realized, so as to incite somebody to action this
The structure extension proposed is invented into the integrated single-pole single-throw switch (SPST) of filtering or filters integrated single pole multiple throw.This filtering is integrated single
Double-pole double throw switch has flexible circuit implementation, such as discrete lamped element, quasi- lamped element and lumped-circuit realization side
Formula.
Resonant inductance L, resonant capacitance C, resonant capacitance C in accompanying drawing 1mAnd resonant capacitance CpDiscrete lump member can be used
The various ways such as part, quasi- lamped element or integrated circuit technology are realized.Semiconductor diode DSW11、DSW12、DSW21And DSW22Should
From low on-resistance Ron, small reverse-biased electric capacity CoffCommercial product or active integrated circuit technique in high-performance p-i-n pipe,
FET or bipolar transistor are realized.Choking resistance RSW, capacitance CbCan under the conditions of electric property needed for satisfaction
Realized using business discrete component product or the relevant technique of integrated circuit.Accompanying drawing 2 provides one kind and realizes quasi- lump using microstrip line
Electric capacity realizes the structure chart of the integrated single-pole double-throw switch (SPDT) of filtering shown in accompanying drawing 1 with inductance element.Spy on SMA connectors 2
Pin directly contacts with 50 Ω feeder lines 4.Signal carries out quasi- TEM moulds transmission in the circuit layer of medium substrate upper surface.Three 50 Ω
Input and output feeder line 4 and three bending ground connection high resistant lines 6-1-1,6-1-2,6-3 three tie points are A1, A2 and A3, are connected
Point A1, A2 and A3 is used to realize three resonant inductance L in accompanying drawing 1 to the high resistant line between ground via 8t；Bending ground connection is high
Resistance line 6-1-1,6-1-2,6-3 line width is narrower, the more long then resonant inductance L of distancetIt is bigger.Four interdigital lines 5 are used to realize accompanying drawing 1
In four coupled capacitor Ce, the length of interdigital line 5 is longer, spacing is narrower, index more at most coupled capacitor CeIt is bigger；Actually set
Timing length, which should try one's best, narrow reduces stray inductance.Two bending ground connection high resistant lines 6-1-1,6-1-2 are used to realize in accompanying drawing 1
Resonant inductance L-LtWith resonant inductance Lt, two bending ground connection high resistant lines 6-2-1,6-2-2 are used to realize that the resonance in accompanying drawing 1 to be electric
Feel L, a bending ground connection high resistant line 6-3 is used to realize the resonant inductance L-L in accompanying drawing 1tWith resonant inductance Lt；Five bendings connect
Ground high resistant line 6-1-1,6-1-2,6-2-1,6-2-2,6-3 bending shape can be different but line width, equal length, the bending such as be arranged to and connects
Ground high resistant line 6-1-1,6-1-2,6-2-1,6-2-2,6-3 line width is narrower, more long then its equivalent electric sensibility reciprocal of length is bigger；It is actual
Its line width, which should try one's best, during use narrow reduces parasitic capacitance.Two fan-shaped minor matters line 7-1-1,7-1-2 are used to realize in accompanying drawing 1
Resonant capacitance C, two fan-shaped minor matters line 7-2-1,7-2-2 are used to realize the resonant capacitance C in accompanying drawing 1m, a fan-shaped minor matters line
7-3 is used to realize the resonant capacitance C in accompanying drawing 1p；Fan-shaped minor matters line 7-1-1,7-1-2,7-2-1,7-2-2,7-3 radius are got over
It is long, the more big then equivalent electric capacity of radian is bigger, its radius, which should try one's best, during actual use small reduces spurious resonance.It is interdigital line 5, curved
Folding ground connection high resistant line 6-1-1,6-1-2,6-2-1,6-2-2,6-3 and fan-shaped minor matters line 7-1-1,7-1-2,7-2-1,7-2-2,7-
3 can by required size, rule of thumb formula calculates initial value first, then in full-wave electromagnetic simulation software optimization obtain it
Final size.
Above is the embodiment of the present invention, those skilled in the art can be by applying side disclosed by the invention
Legal system makes a kind of integrated single-pole double-throw switch (SPDT) of filtering.Present invention fusion switch and two kinds of component functions of wave filter, can reduce
Impedance mismatching is lost, and requirement on machining accuracy is low, realizes that simply low cost is convenient for production, can be conveniently used for being time-multiplexed, open
Close the system radio frequency such as Wave beam forming array and Multiinputoutput front end.
Embodiment 1
The integrated hilted broadsword of the filtering is realized to realizing quasi- lumped capacity and inductance element using microstrip line shown in accompanying drawing 2
Transmit-receive switch is embodied.Using thickness 0.508mm, the medium bases of Arlon Diclad 880 of relative dielectric constant 2.2
Plate, centre frequency, ripple bandwidth and the return loss of bandpass filtering response are respectively chosen as 1000MHz, 195MHz and 20dB.Root
According to coupled resonator filter design theory can calculate external sort factor be 4.3767, the coefficient of coup 0.2009, if attached
Resonant inductance L initial values in Fig. 1 are set to 11nH, then calculate corresponding Lt=4.79nH, C=1.93pF, Cm=1.3pF, Cp
=1.6pF and Ce=0.471pF.The width of 50 Ω feeder lines 4 is fixed as 1.55mm, and the diameter of ground via 8 is fixed as
0.5mm.Bending ground connection high resistant line 6-1-1,6-1-2,6-2-1,6-2-2,6-3 line width are chosen for 0.2mm, length final optimization pass
For 19.1mm.A1, A2, A3 are at 9.08mm apart from final optimization pass apart from ground via 8.Fan-shaped minor matters line 7-1-1,7-1-2,
7-2-1,7-2-2,7-3 radian are chosen for 90 °, and fan-shaped minor matters line 7-1-1,7-1-2 radius final optimization pass are 5.8mm, fan
Shape minor matters line 7-2-1,7-2-2 radius final optimization pass are 2.8mm, and fan-shaped minor matters line 7-3 radius final optimization pass is 3.7mm.
The line width of interdigital line 5 is chosen for 0.2mm, index is chosen for 12, optimize its final spacing and length be respectively 0.2mm and
3.0mm.Semiconductor diode DSW11、DSW12、DSW21And DSW22Using Skyworks company trade product SMP1345-079LF, adopt
Capacitance C is realized with from the 100pF lumped capacities of Murata companiesb, choking resistance RSWSelect as 5k Ω.Including feed
The circuit but size of whole circuit layer for not including 50 Ω feeder lines 4 is only 0.12 λg×0.15λg, λ heregRepresent in 1000MHz
Guide wavelength of the 50 Ω feeder lines 4 on used medium substrate at frequency.So that port 2 is turned on, port 3 is ended as an example, Fig. 4 gives
Microwave filtering designed by structure of the present invention integrates the typical frequencies response of single-pole double-throw switch (SPDT), and vice versa.Work as VSW1Connect-
10V、VSW2When meeting+10V, DSW11And DSW12Cut-off, DSW21And DSW22Conducting, port 2 are turned on, and port 3 is ended.Now, microwave is filtered
It is 0.2W that ripple, which integrates single-pole double-throw switch (SPDT) total power consumption,.The port 2 of conducting state is in band-pass filtering property | S21|, corresponding 3dB phases
To with a width of 30.22%, return loss | S22| better than 20dB, degree of suppression is better than in 1370MHz to 7010MHz stopband range
20dB.Public port echo damages | S11| consumption is better than 20dB.The port 3 of cut-off state is in full resistance characteristic | S31|, it is attached in 1000MHz
Nearly degree of suppression is better than 52.8dB, and degree of suppression is better than 14dB in the frequency range of direct current to 8000MHz.Have one at 2500MHz
The individual undesire frequency response for significantly deteriorating degree of suppression, this is mainly attributed to caused by the non-ideal characteristic of semiconductor diode 9 used,
Using the semiconductor diode D of higher performanceSW11、DSW12、DSW21And DSW22This result can be improved.
Claims (3)
1. the integrated single-pole double-throw switch (SPDT) of one kind filtering, it is characterised in that including three resonant inductance L-Lt, three resonant inductance Lt、
Two resonant inductance L, two resonant capacitance C, two resonant capacitance Cm, a resonant capacitance Cp, four coupled capacitor Ce, four
Capacitance Cb, four choking resistance RSW, four semiconductor diode DSW11、DSW12、DSW21And DSW22, two direct current biasing electricity
Press VSW1、VSW2；Described resonant inductance L-LtWith resonant inductance LtWith series relationship；Four coupled capacitor CeForm a string
Join circuit, Centroid passes through by a resonant capacitance CpWith a resonant inductance L-Lt, a resonant inductance LtWhat is formed shares
Level parallel LC resonance circuit ground connection, wherein resonant inductance L-LtWith resonant inductance LtIt is defeated that middle node forms shared first input
Exit port (1)；One end of series circuit passes through by a resonant capacitance C and a resonant inductance L-Lt, a resonant inductance LtStructure
Into final stage parallel LC resonators ground connection and semiconductor diode DSW12Negative polarity end connects a capacitance CbAfter be grounded, separately
One end passes through by a resonant capacitance C and a resonant inductance L-Lt, a resonant inductance LtThe final stage parallel LC resonators of composition
Ground connection and semiconductor diode DSW22Negative polarity end connects a capacitance CbAfter be grounded, wherein semiconductor diode DSW12Just
Polar end and capacitance CbBetween node pass through a choking resistance RSWConnect direct current biasing VSW1, semiconductor diode
DSW22Positive ends and capacitance CbBetween node pass through a choking resistance RSWConnect direct current biasing VSW2；It is described with
Semiconductor diode DSW12Adjacent resonant inductance L-LtWith resonant inductance LtMiddle node forms the second input/output port
(2)；It is described with semiconductor diode DSW22Adjacent resonant inductance L-LtWith resonant inductance LtIt is defeated that middle node forms the 3rd
Enter output port (3)；With semiconductor diode DSW12Two adjacent coupled capacitor CeBetween node pass through by a resonance electricity
Hold Cm, the intergrade parallel LC resonance circuit ground connection that forms of a resonant inductance L and semiconductor diode DSW11Negative polarity end connects
One capacitance CbAfter be grounded, wherein semiconductor diode DSW11Positive ends and capacitance CbBetween node pass through one
Individual choking resistance RSWConnect DC offset voltage VSW1；With semiconductor diode DSW22Two adjacent coupled capacitor CeBetween
Node passes through by a resonant capacitance Cm, the intergrade parallel LC resonance circuit ground connection that forms of a resonant inductance L and semiconductor
Diode DSW21Negative polarity end connects a capacitance CbAfter be grounded, wherein semiconductor diode DSW21Positive ends and blocking
Electric capacity CbBetween node pass through a choking resistance RSWConnect direct current biasing VSW2；Described DC offset voltage VSW1With VSW2
For absolute value is equal and opposite polarity voltage；Work as VSW1For negative, VSW2For timing, semiconductor diode DSW11、DSW12Cut-off, half
Conductor diode DSW21、DSW22Conducting, second port (2) conducting, the cut-off of the 3rd port (3), signal is in first port (1) and the
Two-port netwerk flows in or out between (2)；Work as VSW1For just, VSW2During to bear, semiconductor diode DSW11、DSW12Conducting, semiconductor two
Pole pipe DSW21、DSW22Cut-off, second port (2) cut-off, the conducting of the 3rd port (3), signal is in first port (1) and the 3rd port
(3) flowed in or out between.
2. a kind of realize that quasi- lumped capacity realizes the integrated single-pole double throw of filtering described in claim 1 with inductance element using microstrip line
The structure of switch, it is characterised in that medium substrate (3) including metallic cavity (1) and in metallic cavity (1), three
SMA connectors (2), four semiconductor diode DSW11、DSW12、DSW21And DSW22, four choking resistance RSW, four capacitances
Cb, etching in the circuit layer of medium substrate upper surface and the ground metal layer of medium substrate lower surface；Described etching is in medium
The circuit layer of upper surface of base plate includes three 50 Ω input and output feeder lines (4), four interdigital lines (5), five bending ground connection high resistants
Line (6-1-1), (6-1-2), (6-2-1), (6-2-2), (6-3), five fan-shaped minor matters lines (7-1-1), (7-1-2), (7-2-
1), (7-2-2), (7-3) and ground via (8)；Three SMA connectors (2) are located at three sides of medium substrate (3)；Four friendships
It is four coupled capacitor C to refer to line (5)e, form a series circuit；Centre position connects fan-shaped minor matters line (7-3) as resonance electricity
Hold Cp, bending ground connection high resistant line (6-3) is resonant inductance L-LtWith resonant inductance Lt, bending ground connection high resistant line (6-3) broken line middle part
It is first port 1 that A1 points connect a SMA connector by 50 Ω input and output feeder line, wherein A1 points to ground via
(8) the bending ground connection high resistant line between is resonant inductance Lt；Formed series circuit one end connect fan-shaped minor matters line (7-1-1) and
Bending ground connection high resistant line (6-1-1), fan-shaped minor matters line (7-1-1) is resonant capacitance C, passes through semiconductor diode DSW12Negative polarity
One capacitance C of end connectionbAfter be grounded, wherein semiconductor diode DSW12Positive ends and capacitance CbBetween node
Pass through a choking resistance RSWConnect direct current biasing VSW1；Bending ground connection high resistant line (6-1-1) is resonant inductance L-LtWith resonance electricity
Feel Lt, it is second port 2 that A2 points in centre position connect a SMA connector by 50 Ω input and output feeder line, wherein A2
It is resonant inductance L that point is grounded high resistant line to the bending between ground viat；The other end of series circuit connects fan-shaped minor matters line
(7-1-2) and bending ground connection high resistant line (6-1-2), fan-shaped minor matters line (7-1-2) is resonant capacitance C, passes through semiconductor diode
DSW22Negative polarity end connects a capacitance CbAfter be grounded, wherein semiconductor diode DSW22Positive ends and capacitance Cb
Between node pass through a choking resistance RSWConnect direct current biasing VSW2；It is resonant inductance L-L to bend high resistant line (6-1-2)tWith
Resonant inductance Lt, it is the 3rd port 3 that A3 points in centre position connect a SMA connector by a 50 Ω input and output feeder lines,
It is resonant inductance L that wherein A3 points are grounded high resistant line to the bending between ground viat；With semiconductor diode DSW12Adjacent two
Individual interdigital line centre position connects fan-shaped minor matters line (7-2-1) and bending ground connection high resistant line (6-2-1), and is partly led by semiconductor
Body diode DSW11Negative polarity end connects a capacitance CbAfter be grounded, semiconductor diode DSW11Positive ends and blocking electricity
Hold CbBetween node pass through a choking resistance RSWConnect direct current biasing VSW1；Wherein：Fan-shaped minor matters line (7-2-1) is resonance
Electric capacity Cm, bending ground connection high resistant line (6-2-1) is resonant inductance L；With semiconductor diode DSW22Two adjacent interdigital lines (5)
Centre position connects fan-shaped minor matters line (7-2-2) and bending ground connection high resistant line (6-2-2) and passes through semiconductor semiconductor diode
DSW21Negative polarity end connects a capacitance CbAfter be grounded, semiconductor diode DSW21Positive ends and capacitance CbBetween
Node pass through a choking resistance RSWConnect direct current biasing VSW2；Wherein：Fan-shaped minor matters line (7-2-2) is resonant capacitance Cm, it is curved
Folding ground connection high resistant line (6-2-2) is resonant inductance L；Described DC offset voltage VSW1With VSW2For absolute value is equal and polarity phase
Anti- voltage；Work as VSW1For negative, VSW2For timing, semiconductor diode DSW11、DSW12Cut-off, semiconductor diode DSW21、DSW22Lead
Logical, second port (2) conducting, the cut-off of the 3rd port (3), signal are flowed into or flowed between first port (1) and second port (2)
Go out；Work as VSW1For just, VSW2During to bear, semiconductor diode DSW11、DSW12Conducting, semiconductor diode DSW21、DSW22Cut-off, the
Two-port netwerk (2) cut-off, the conducting of the 3rd port (3), signal flow in or out between first port (1) and the 3rd port (3).
3. microstrip line realizes the integrated single-pole double-throw switch (SPDT) of the filtering of quasi- lumped capacity and inductance element according to claim 2
Structure, it is characterised in that：Five described bending ground connection high resistant lines (6-1-1), (6-1-2), (6-2-1), (6-2-2), (6-3)
It is wide and isometric.
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| CN115332745A (en) * | 2022-08-17 | 2022-11-11 | 成都威频科技有限公司 | Wide-stopband YIG tunable bandstop filter |
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| CN113037240A (en) * | 2021-03-08 | 2021-06-25 | 电子科技大学 | Wide adjustable range band elimination filter device with continuous frequency adjustable characteristic |
| CN113037240B (en) * | 2021-03-08 | 2022-06-24 | 电子科技大学 | Wide adjustable range band elimination filter device with continuous frequency adjustable characteristic |
| CN115332745A (en) * | 2022-08-17 | 2022-11-11 | 成都威频科技有限公司 | Wide-stopband YIG tunable bandstop filter |
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