CN107394361A - A kind of restructural beam scanning battle array based on microstrip line construction - Google Patents
A kind of restructural beam scanning battle array based on microstrip line construction Download PDFInfo
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- CN107394361A CN107394361A CN201710464713.7A CN201710464713A CN107394361A CN 107394361 A CN107394361 A CN 107394361A CN 201710464713 A CN201710464713 A CN 201710464713A CN 107394361 A CN107394361 A CN 107394361A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/30—Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
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Abstract
A kind of restructural beam scanning battle array based on microstrip line construction, including the traveling wave microstrip line as bit phase source, the antenna element of symmetrical two is set in traveling wave microstrip line both sides, symmetrical two antenna elements form an antenna pair, and each antenna element passes through 2n‑1Individual binary on-off in parallel is connected with the traveling wave microstrip line, and during n ＞ 1, in the tie point of same antenna element and traveling wave microstrip line, adjacent attachment points spacing is λg/(2n) so that each antenna is to utilizing 2nIndividual binary on-off produces 2 needed for n-bit battle arraynIndividual phase state, a restructural n-bit unit is formed, by the restructural n-bit unit along traveling wave microstrip line both sides periodic arrangement, produce restructural n-bit array, wherein, λgFor medium wavelength, microstrip line of the present invention based on transmission traveling wave has the characteristic of continuous 360 ° of phases, it is proposed that has the restructural bit battle array solution of any bit number.
Description
Technical field
The invention belongs to antenna technical field, more particularly to a kind of restructural beam scanning battle array based on microstrip line construction.
Background technology
The working frequency range of most of wireless systems is all one section of given very narrow frequency range, fixed frequency beam scanning
Application field it is very extensive, such as vehicle radar system, high-resolution imaging system and satellite communication system etc..It is most common
Beam scanning antennas is to introduce a phase-shifter for having continuous phase regulating power to each unit of aerial array, but continuously
Phase-shifter has many defects, for example continuous voltage/current control is very complicated, change to temperature is more sensitive, in different phase shifts
Insertion loss difference etc. under state.
Restructural bit battle array can solve these defects existing for continuous phase scanning battle array, and restructural bit battle array is each day
Desired phase needed for line unit is quantified, and system complexity is reduced to sacrifice antenna performance as cost.For a n
Bit battle array, each radiating element have 2nIndividual available phase, quantization phase of the actual excitation phase of unit closest to desired phase
Position replaces.Reconfigurable cell is generally integrated with different types of adjustable bit device, for example, binary switch, PIN pipe and
Digital phase shifter etc., in order to be switched between different phase states.Compared with continuous phase scans battle array, bit battle array has
Effect the complexity of biasing circuit and control logic is reduced, insertion loss is reduced, reduces cost.
Restructural bit battle array can be divided into three classes.The first kind is restructural reflective array and transmission battle array, and most of bit battle array is all
It is a kind of to belong to this.Its advantage be the feeding classification of ripe, the empty feedback of design method without the concern for resistance matching problem, but feed
Three-dimensional structure is formed with antenna array, it is difficult to the scene applied to limited space.Second class restructural bit battle array is to each day
Line unit loads a digital phase shifter, and this kind of bit battle array is planar structure, but shortcoming is that array inputs resistance under different conditions
Resistanceization is violent, and regulation impedance matching is highly difficult, is designed without any rule, sufficiently complex.3rd class restructural bit battle array is
Bit device is can adjust to travelling-wave aerial loading cycle, it overcomes, and the second class bit battle array impedance matching regulation is difficult to ask
Topic, while also maintain planar structure.The restructural of half module wave guide wave leakage antenna is most commonly based in this class bit battle array
Bit battle array, the opening edge of half module waveguide whether is loaded on come controlling cycle lumped capacity or short-circuit wall by switching, with this side
Formula adjusts the scattering properties at fixed frequency, obtains scanning beam.
The content of the invention
The shortcomings that in order to overcome above-mentioned prior art, it is an object of the invention to provide it is a kind of based on microstrip line construction can
Beam scanning battle array is reconstructed, the microstrip line based on transmission traveling wave has the characteristic of continuous 360 ° of phases, it is proposed that has any bit
The restructural bit battle array solution of number；And the feasibility of the program is verified with the bit battle array of ten unit restructural 2, emulation knot
Fruit shows that the bit battle array of restructural 2 has reached 94 °, and the beam quality in scanning field in the main beam scanning range of center frequency point
It is fine with uniformity.
To achieve these goals, the technical solution adopted by the present invention is：
A kind of restructural beam scanning battle array based on microstrip line construction, including the traveling wave microstrip line as bit phase source,
The antenna element of symmetrical two is set in traveling wave microstrip line both sides, symmetrical two antenna elements form an antenna pair, often
Individual antenna element passes through 2n-1Individual binary on-off in parallel is connected with the traveling wave microstrip line, and during n ＞ 1, same antenna element
With in the tie point of traveling wave microstrip line, adjacent attachment points spacing is λg/(2n) so that each antenna is to utilizing 2nIndividual binary on-off
Produce 2 needed for n-bit battle arraynIndividual phase state, a restructural n-bit unit is formed, by the restructural n-bit unit edge
Traveling wave microstrip line both sides periodic arrangement, produces restructural n-bit array, wherein, λgFor medium wavelength.
During the binary on-off closure, corresponding antenna element is connected with traveling wave microstrip line, is effectively encouraged；Binary on-off
During disconnection, corresponding antenna element with microstrip line is mutually isolated is independent of each other；Each antenna is to an only antenna element every time
Effectively encouraged, another antenna element is isolated.
The n=1, two antenna element feeding classifications of each antenna alignment are identical but position is in mirror, thus
It can obtain 0 ° and -180 ° of two phase states, form a bit cell of restructural 1, by this 1 bit cell along traveling wave micro-strip
Line both sides periodic arrangement, the bit-array of restructural 1 is just obtained.
The n=2, two antenna element feeding classifications of each antenna alignment are identical but position is in mirror, thus
0 °, -90 °, -180 ° and -270 ° four phase states can be obtained, a bit cell of restructural 2 are formed, by this 2 bit list
Member has just obtained the bit-array of restructural 2 along traveling wave microstrip line both sides periodic arrangement.
The n=3, two antenna element feeding classifications of each antenna alignment are identical but position is in mirror, thus
0 °, -45 °, -90 °, -135 °, -180 °, -225 °, -270 ° and -315 ° eight phase states can be obtained, form a restructural 3
Bit cell, by this 3 bit cell along traveling wave microstrip line both sides periodic arrangement, the bit-array of restructural 3 is just obtained.
The restructural n-bit array realizes that fixed frequency wave beam is swept by selecting the quantization phase of each antenna element
Retouch.
In the fixed frequency beam scanning, the mouth face corresponding to different scanning wave beam quantifies the calculating of compensation phase distribution
Method is as follows：
Assuming that object beam is oriented to θm, required desired excitation phase distribution is：
Φreq=-k0×dp×sin(θm)×n
k0For electromagnetic wave free space wave number, dpFor the distribution period of restructural n-bit unit, due to periodicity bit list
It is first to be successively connected with traveling wave microstrip line, therefore it is poor a proper phase relevant with unit spacing between adjacent radiation unit to be present
Wherein λgMedium wavelength is represented, the intrinsic mouth face phase distribution as caused by this intrinsic difference is：
Ideal compensation phase distribution required for array is：
Φobj=Φreq-Φinh+Φ0
Wherein Ф0For phase adjusted item, for optimizing mouthful face phase distribution to obtain the scanning beam of optimal quality, will manage
Want to compensate phase normalization and quantify to compensate a phase distribution to being quantified in the range of -360 °~0 ° just to produce mouthful face again,
So far just obtain the mouth face corresponding to all scanning beams and quantify compensation phase distribution, each distribution is corresponding a kind of
Array status.
Compared with prior art, the beneficial effects of the invention are as follows：
By directly obtaining different phase excitations on traveling wave transmission line, realized with single simple structure existing phased
Two kinds of functional units of feeding network and phase shifter in array antenna it is integrated.Significantly simplify the complicated of phased array antenna
Degree, the cost of phased array antenna can be significantly reduced.
Brief description of the drawings
Fig. 1 is the restructural bit ripple with any bit number involved in the present invention based on traveling wave microstrip line construction
Beam scanning battle array, including (a) 1 bit battle array, (b) 2 bit battle array, (c) 3 bit battle array principle.
Fig. 2 is that the bit beam of ten unit restructural 2 that the present invention realizes scans battle array.
Fig. 3 is the specific embodiment for working in 5GHz of the present invention.
Table 1 be the embodiment at center frequency point 5GHz, array status and institute corresponding to different target scanning angle
Realization main beam angle (ten 2 bit cells are from left to right referred to as 1~unit of unit 10, the four of each bit cell
Individual 0 ° of phase state, -90 °, -180 °, -270 ° be referred to as 1,2,3,4).
Fig. 4 is scan performance of the embodiment in -50 °~+50 ° angle domains at center frequency point 5GHz, including (a) is in fact
12 existing H faces directionality directional diagrams, (b) and (c) are 21 array status corresponding when interval carries out beam scanning with 5 °
Reflectance factor, transmission coefficient, peak directivity and peak gain at 5GHz.
Embodiment
Describe embodiments of the present invention in detail with reference to the accompanying drawings and examples.
There is the characteristics of arbitrary phase on microstrip line based on transmission traveling wave, present invention firstly provides utilize traveling wave microstrip line
As the phase potential source of bit phased array antenna, setting for the restructural bit battle array with any bit number is constructed based on this
Thought is counted, Fig. 1 describes the restructural bit battle array solution based on microstrip line construction in detail by taking three kinds of bit battle arrays as an example.
Fig. 1 (a) is 1 bit battle array schematic diagram.The microstrip line both sides of transmission traveling wave are symmetrically distributed periodically that (cycle is
dp) antenna element, one antenna of symmetrical two units composition is to (such as antenna 1 and antenna 2, antenna 3 and antenna 4).Each
There is a binary on-off to control whether it is connected with microstrip line on unit：During switch closure, the antenna element and microstrip line phase
Even, can effectively be encouraged；When switching off, the antenna element with microstrip line is mutually isolated is independent of each other；Each antenna is to every
A secondary only switch closure, it is another to switch off.Two antenna element feeding classifications of each antenna alignment are identical but position
In mirror, therefore there are 180 ° of phase differences in their galactic cosmic rays, so just obtained 0 ° of two phase states and-
180 °, form a bit cell of restructural 1.By this 1 bit cell along traveling wave microstrip line both sides periodic arrangement, just obtain
Restructural 1 bit-array.
Fig. 1 (b) is 2 bit battle array schematic diagrams.Array overall structure is identical with 1 bit battle array, simply each antenna element with it is micro-
Connected mode with line is changed：It is quarter-wave potential connection that each unit has two spacing with microstrip line
Point, the access point of each unit is controlled by two binary on-offs.By taking antenna 1 as an example, when switching the disconnection of 1 closure switch 2,
Antenna 1 is connected in A points with microstrip line, and when switching the disconnection of 2 closure switch 1, antenna 1 is connected in B points with microstrip line, and B points compare A
Point hysteresis quarter-wave, therefore 90 ° of delayed phase for feeding to obtain in A points in B point feed ratios, such antenna 1 just provide
0 ° and -90 ° of two phase states；Antenna 2 in microstrip line opposite side due to position mirror image, can provide -180 ° and -
270 ° of two phase states；Four phase states needed for 2 bit battle arrays have so just been obtained, have formed a bit list of restructural 2
Member.By this 2 bit cell along traveling wave microstrip line both sides periodic arrangement, the bit-array of restructural 2 has just been obtained.
Fig. 1 (c) is 3 bit battle array schematic diagrams.Now each antenna element has four two-by-two at a distance of 1/8th with microstrip line
The potential tie point of wavelength, access point is controlled to provide 0 °, -45 °, -90 ° and -135 ° four by four binary on-offs
Phase state.Each antenna forms one to that can produce eight phase states needed for 3 bit battle arrays by eight binary on-offs
The bit cell of restructural 3.By this 3 bit cell along traveling wave microstrip line both sides periodic arrangement, the bit of restructural 3 has just been obtained
Array.
By that analogy, each antenna is to utilizing 2nIndividual binary on-off can produce 2 needed for n-bit battle arraynIndividual phase state,
Form a restructural n-bit unit.Therefore, the restructural ratio with any bit number can be constructed based on traveling wave microstrip line
Special battle array.
Restructural bit battle array selects the quantization phase of each antenna element, realizes fixed frequency by adjusting array status
Spot beam scans.The mouth face that this trifle is introduced corresponding to different scanning wave beam quantifies the computational methods of compensation phase distribution.Assuming that
Object beam is oriented to θm, required desired excitation phase distribution is：
Φreq=-k0×dp×sin(θm) × n (n=1 ..., N) (formula 1)
Because periodicity bit unit successively be connected with traveling wave microstrip line, thus exist between adjacent radiation unit one and
The relevant proper phase of unit spacing is poor
Wherein λgMedium wavelength is represented, the intrinsic mouth face phase distribution as caused by this intrinsic difference is：
Ideal compensation phase distribution required for array is：
Φobj=Φreq-Φinh+Φ0(formula 4)
Wherein Ф0For phase adjusted item, for optimizing mouthful face phase distribution to obtain the scanning beam of optimal quality.Will reason
Want to compensate phase normalization and quantify to compensate a phase distribution to carrying out quantization in the range of -360 °~0 ° again and can obtain mouthful face.With 2 ratios
Exemplified by special battle array, phase quantization criterion is as follows：
So far compensation phase distribution can be quantified to obtain the mouth face corresponding to all scanning beams, each distribution is corresponding
A kind of array status.
It is a kind of concrete form that the bit beam of ten unit restructural 2 scans battle array refering to Fig. 2, using individual layer harden structure, bag
One piece of substrate 2 based on double-sided printed-circuit board technique is included, prints metal level 1 and 3 respectively on its obverse and reverse.Positive gold
Belonging to layer includes the microstrip line 13 of transmission traveling wave, matching microstrip line 14 and 15 and the antenna element positioned at microstrip line both sides etc., micro-strip
Line both sides it is symmetrical 20 antenna elements (such as 11 and 12), have two potential feed minor matters on each antenna element (such as
Antenna element 11 has 111 and 112 two feed minor matters, and antenna element 121 has 121 and 122 two feed minor matters)；Each day
Line unit connects that (such as antenna element 11 passes through metallization VIA 21, antenna element 12 by the floor 3 of metallization VIA and reverse side
Connected by metallization VIA 22 and reverse side floor 3), the short circuit of three sides is formed while the rectangular aperture resonator of open circuit.Often
Between two of one antenna element potential feed minor matters and microstrip line gap (as existing for antenna element 11 gap 113 and
114, gap 123 existing for antenna element 12 and 124) be used for accommodate bit switch, this is controlled by the break-make of bit switch
Whether unit is effectively encouraged and excitation phase.
A bit cell of restructural 2, such as antenna element are formed per symmetrical two antenna elements positioned at microstrip line both sides
11 and 12 form a bit cell of restructural 2.Control bit switchs, when the other gap digits of switch connection positioned at gap 113
When switching off of the place of putting, antenna element 11 is effectively encouraged in 113 opening positions and antenna element 12 and microstrip line are mutually isolated
Do not encouraged effectively, now the excitation phase of 2 bit cell is 0 °；When the other gaps of switch connection positioned at gap 114
When switching off of opening position, antenna element 11 114 opening positions effectively encouraged and antenna element 12 and microstrip line mutually every
From not encouraged effectively, now the excitation phase of 2 bit cell is -90 °；Similarly, when positioned at gap 123 or 124
At the other interstitial sites of switch connection when switching off, antenna element 12 is effectively encouraged and day in 123 or 124 opening positions
Line unit 11 with microstrip line is mutually isolated is not encouraged effectively, now the excitation phase of 2 bit cell be -180 ° or -
270°.A bit cell of restructural 2 is so just formed, 20 such units are symmetrical just along traveling wave microstrip line both sides
Constitute the bit beam of ten unit restructural 2 scanning battle array.Antenna is fed from left side, and right side connects matched load or attenuator is inhaled
Receive dump energy.
Fig. 3 gives the bit beam of ten unit restructural 2 that center frequency point is 5GHz and scans battle array specific embodiment.Medium base
The length of plate 2 in X direction is 264 millimeters, and the width along Y-direction is 32.8 millimeters, and the thickness along Z-direction is 2.54 millimeters；Just
The length of the traveling wave microstrip line 13 in face in X direction is 248 millimeters, and the width along Y-direction is 1.5 millimeters, matches the He of microstrip line 14
15 length in X direction is 8 millimeters, and the width along Y-direction is 3 millimeters；All antenna element sizes are identical, in X direction
Length be 23 millimeters, the width along Y-direction is 9.6 millimeters, adjacent antenna units spacing be 25 millimeters；All potential feedbacks
Electric minor matters size is identical, and length in X direction is 2 millimeters, and the width along Y-direction is 3 millimeters, on each antenna element
Two minor matters spacing are 10 millimeters；It it is 2 millimeters for accommodating the length of the gap of bit switch in X direction, along the width of Y-direction
Degree is 2 millimeters；All metallization VIA sizes are identical, and through-hole diameter is 0.5 millimeter, 0.8 millimeter of pitch of holes, and Kong Xinyu is situated between
Scutum Edge Distance is 0.4 millimeter.It is Taconic TLX-8 sheet materials used by medium substrate 2, dielectric constant 2.55, is lost
Angle 0.0019.Antenna is fed from port 1, and port 2 connects matched load or attenuator absorbs dump energy.For simplicity, may be used
" ON " state of device is adjusted to be replaced with minor matters are extended to the mode to connect with microstrip line, " OFF " state keeps minor matters not change
.
Provided using the simulation result of the embodiment of the parameter designing by table 1 and Fig. 4.
When table 1 is given at center frequency point 5GHz corresponding to five targeted scans angles (- 50 °, -25 °, 0 °, 25 °, 50 °)
Array status and the main beam angle realized.In table, ten 2 bit cells are from left to right referred to as 1~unit of unit 10,
0 ° of four phase states of each bit cell, -90 °, -180 °, -270 ° be referred to as 1,2,3,4.The maximum direction realized
Respectively (- 48 °, -25 °, -1 °, 26 °, 46 °), maximum angle error are not more than 4 °.
Fig. 4 studies the scan performance at center frequency point 5GHz, using the antenna without two sections of matching minor matters of head and the tail as research
Object, scanning range is weighed by the use of the quality (peak directivity and secondary lobe) of directionality directional diagram as standard.Fig. 4 (a) be -
In 50 °~+50 ° angle domains, 12 H faces (XZ faces) directionality directional diagram that the 2 bit battle array is realized at 5GHz.That is realized sweeps
It is to penetrate scanning direction to 46 ° of positive direction from -48 ° of negative direction across sides to retouch scope, peak directivity between 12.25~
Between 13.79dBi, fluctuation is not more than 1.54dB.Very big secondary lobe, peak be present in the low elevation angle area directional diagram more than -48 ° or+46 °
Value directionality strongly reduces.
The 2 bit battle array has ideal impedance operator：The input impedance of different array status is around 110 Ω at one
Change in limited scope, and 110 Ω are precisely the characteristic impedance of traveling wave microstrip line, show periodically 2 bit radiating elements
The transmission mode loaded for microstrip line influences very little.Therefore microstrip line is converted with two sections of identical impedances at head and the tail both ends
More good matching is obtained, as shown in Figure 2.
Fig. 4 (b) and (c) are provided when the 2 bit battle array is in -50 °~+50 ° angle domains, are that interval carries out beam scanning with 5 °
When reflectance factor, transmission coefficient, peak directivity and peak gain at 5GHz of corresponding 21 array status.Observation figure
4 (b), matching during 0 ° of beam position is worst, and reflectance value is -6.95dB, and this is by the distinctive band resistance phenomenon of travelling-wave aerial
Cause, and the reflectance factor under remaining array status is superior to -10dB.Transmission coefficient changes between -5.37~-17.66dB,
Transmission coefficient corresponding to low elevation beam is larger, and the radianting capacity of array is weaker.The absorptivity of scanning field inner port 2 between
Between 1.7%~29%, show most of energy production Net long wave radiation.Observe Fig. 4 (c), peak directivity between 12.25~
Between 13.79dBi, fluctuation range is not more than 1.54dB；Peak gain is between 10.43~12.92dBi, and fluctuation range is not
More than 2.49dB.To sum up, the 2 bit battle array has preferably beam scanning performance in center frequency point.
Claims (8)
1. a kind of restructural beam scanning battle array based on microstrip line construction, including the traveling wave microstrip line as bit phase source, its
It is characterised by, set the antenna element of symmetrical two in traveling wave microstrip line both sides, symmetrical two antenna elements form one
Antenna pair, each antenna element pass through 2nIndividual binary on-off in parallel is connected with the traveling wave microstrip line, and during n ＞ 1, it is same
In the tie point of antenna element and traveling wave microstrip line, adjacent attachment points spacing is λg/(2n) so that each antenna is to utilizing 2nIt is individual
Binary on-off produces 2 needed for n-bit battle arraynIndividual phase state, a restructural n-bit unit is formed, by the restructural n ratios
Special unit produces restructural n-bit array along traveling wave microstrip line both sides periodic arrangement, wherein, λgFor medium wavelength.
2. the restructural beam scanning battle array based on microstrip line construction according to claim 1, it is characterised in that the binary is opened
When closing conjunction, corresponding antenna element is connected with traveling wave microstrip line, is effectively encouraged；When binary on-off disconnects, corresponding antenna
Unit with microstrip line is mutually isolated is independent of each other；Each antenna is effectively encouraged to an only antenna element every time, another
Antenna element is isolated.
3. the restructural beam scanning battle array based on microstrip line construction according to claim 1, it is characterised in that the n=1,
Two antenna element feeding classifications of each antenna alignment are identical but position is in mirror, thus can obtain 0 ° and -180 ° two
Individual phase state, a bit cell of restructural 1 is formed, by this 1 bit cell along traveling wave microstrip line both sides periodic arrangement,
Just the bit-array of restructural 1 has been obtained.
4. the restructural beam scanning battle array based on microstrip line construction according to claim 1, it is characterised in that the n=2,
Two antenna element feeding classifications of each antenna alignment are identical but position is in mirror, thus can obtain 0 °, -90 °, -
180 ° and -270 ° of four phase states, a bit cell of restructural 2 is formed, by this 2 bit cell along traveling wave microstrip line two
Side periodic arrangement, the bit-array of restructural 2 is just obtained.
5. the restructural beam scanning battle array based on microstrip line construction according to claim 4, it is characterised in that the restructural
2 bit-arrays use individual layer harden structure, including one pieces the substrate based on double-sided printed-circuit board technique, on its obverse and reverse point
Metal level is not printed, and front metal layer includes traveling wave microstrip line, and the both ends of traveling wave microstrip line are connected with matching microstrip line, both sides
There are symmetrical 20 antenna elements, there are two potential feed minor matters on each antenna element, each antenna element passes through metal
Change via be connected with reverse side metal level, it is short-circuit while the rectangular aperture resonator opened a way to form three sides, and the two of each antenna element
Gap between individual potential feed minor matters and microstrip line is used for accommodating bit switch, and the day is controlled by the break-make of bit switch
Whether line unit is effectively encouraged and excitation phase.
6. the restructural beam scanning battle array based on microstrip line construction according to claim 1, it is characterised in that the n=3,
Two antenna element feeding classifications of each antenna alignment are identical but position is in mirror, thus can obtain 0 °, -45 °, -
90 °, -135 °, -180 °, -225 °, -270 ° and -315 ° eight phase states, a bit cell of restructural 3 is formed, will be this
3 bit cells have just obtained the bit-array of restructural 3 along traveling wave microstrip line both sides periodic arrangement.
7. the restructural beam scanning battle array based on microstrip line construction according to claim 1, it is characterised in that the restructural
N-bit array realizes fixed frequency beam scanning by selecting the quantization phase of each antenna element.
8. the restructural beam scanning battle array based on microstrip line construction according to claim 1, it is characterised in that the fixed frequency
In spot beam scanning, the computational methods that the mouth face corresponding to different scanning wave beam quantifies compensation phase distribution are as follows：
Assuming that object beam is oriented to θm, required desired excitation phase distribution is：
Φreq=-k0×dp×sin(θm)×n
k0For electromagnetic wave free space wave number, dpFor the distribution period of restructural n-bit unit, because periodicity bit unit is first
It is connected afterwards with traveling wave microstrip line, therefore it is poor a proper phase relevant with unit spacing between adjacent radiation unit to be present
Wherein λgMedium wavelength is represented, the intrinsic mouth face phase distribution as caused by this intrinsic difference is：
Ideal compensation phase distribution required for array is：
Φobj=Φreq-Φinh+Φ0
Wherein Ф0For phase adjusted item, for optimizing mouthful face phase distribution to obtain the scanning beam of optimal quality, it would be desirable to mend
Repay phase normalization and quantify a compensation phase distribution to being quantified in the range of -360 °~0 ° just to produce mouthful face again,
So far just obtain the mouth face corresponding to all scanning beams and quantify compensation phase distribution, a kind of corresponding array of each distribution
State.
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Cited By (3)
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| CN110632670A (en) * | 2019-09-06 | 2019-12-31 | 北京理工大学 | Multi-frequency-point reconfigurable electromagnetic surface rapid imaging method |
| CN115441136A (en) * | 2022-08-31 | 2022-12-06 | 西安电子科技大学 | Compact high-precision digital multi-position phase shifter |
| CN116526162A (en) * | 2023-05-29 | 2023-08-01 | 电子科技大学 | Dual-channel dual-linear polarization 2-bit array antenna |
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| CN110632670A (en) * | 2019-09-06 | 2019-12-31 | 北京理工大学 | Multi-frequency-point reconfigurable electromagnetic surface rapid imaging method |
| CN110632670B (en) * | 2019-09-06 | 2020-08-21 | 北京理工大学 | Multi-frequency-point reconfigurable electromagnetic surface rapid imaging method |
| CN115441136A (en) * | 2022-08-31 | 2022-12-06 | 西安电子科技大学 | Compact high-precision digital multi-position phase shifter |
| CN116526162A (en) * | 2023-05-29 | 2023-08-01 | 电子科技大学 | Dual-channel dual-linear polarization 2-bit array antenna |
| CN116526162B (en) * | 2023-05-29 | 2024-06-21 | 电子科技大学 | Dual-channel dual-linear polarization 2-bit array antenna |
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