CN107385505A - A kind of method that seed crystal for casting single crystal orients - Google Patents
A kind of method that seed crystal for casting single crystal orients Download PDFInfo
- Publication number
- CN107385505A CN107385505A CN201710574846.XA CN201710574846A CN107385505A CN 107385505 A CN107385505 A CN 107385505A CN 201710574846 A CN201710574846 A CN 201710574846A CN 107385505 A CN107385505 A CN 107385505A
- Authority
- CN
- China
- Prior art keywords
- seed
- seed particles
- crucible
- single crystal
- orients
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
Abstract
The invention provides a kind of method that seed crystal for casting single crystal orients, comprise the following steps：（1）Oriented seed wafer is taken first, is ground, is polished removal surface damage layer, its surface is reached minute surface；（2）Structure type magnetic macromolecule materials material is coated in the surface of polished seed wafer, is then broken into seed particles；（3）After normal crucible bottom coating spraying is completed, choose the equally distributed seed particles of particle and be layered on crucible inner bottom part；（4）Then by electromagnetic field so that seed particles are consistent with magnetic field alignment direction, so as to realize seed particles oriented alignment.The present invention uses seed particles, in crucible shop fixtures, increases external magnetic field, it is laid in crucible bottom according to regulation crystal orientation, by the way of fine melt ingot casting, so as to reduce dislocation and impurity, completes casting monocrystalline silicon.
Description
Technical field
The present invention relates to a kind of method that seed crystal applied during crystal growth orients, gained monocrystalline silicon piece application
In field of solar thermal power generation.
Background technology
The crystal growth method that field of solar energy uses at present, mainly include ingot casting polycrystalline and pulling of crystals.It is traditional straight
Impurity is low with the content of defect in crystal-pulling silicon materials, the high conversion efficiency of its solar cell, but production cost is also higher；Casting
Production of polysilicon cost is low, but substantial amounts of crystal boundary, dislocation and impurity inside it be present, and these factors are to casting polysilicon sun electricity
The performance in pond has great influence.Casting monocrystalline silicon combines pulling of silicon single crystal with casting the advantage of polysilicon, less than vertical pulling
The production cost of single crystal silicon material, the conversion efficiency of its solar cell are higher than conventional cast polysilicon, have weight to photovoltaic industry
Want meaning.
Existing casting single crystal technique predominantly has seed crystal ingot casting, typically by the way of sheet, the splicing of block seed crystal, distribution
In crucible bottom.Due to easily producing dislocation multiplication at splicing seams, casting single crystal dislocation is ultimately resulted in, Control of Impurities difficulty increases
Greatly, monocrystalline ratio and photoelectric transformation efficiency are had a strong impact on, it is therefore desirable to a kind of new seed crystal shop fixtures mode, bit errorprobability is reduced,
Lower impurity content simultaneously.
The content of the invention
It is an object of the invention to provide a kind of method that seed crystal for casting single crystal orients, to reduce bit errorprobability, together
When lower impurity content.
To achieve the above object, the technical solution adopted by the present invention is：
A kind of method that seed crystal for casting single crystal orients, comprises the following steps：
（1）Oriented seed wafer is taken first, is ground, is polished removal surface damage layer, its surface is reached minute surface；
（2）Structure type magnetic macromolecule materials material is coated in the surface of polished seed wafer, is then broken into seed particles；
（3）After normal crucible bottom coating spraying is completed, choose the equally distributed seed particles of particle and be layered on bottom in crucible
Portion；
（4）Then by electromagnetic field so that seed particles are consistent with magnetic field alignment direction, so as to realize seed particles orientation row
Cloth.
Step（2）In, behind surface of the structure type magnetic macromolecule materials material coated in polished seed particles, by it
105 DEG C are heated to, and continues 10 minutes.
Step（2）In, seed wafer is broken into the seed particles that particle diameter is 10-10000 microns.
Step（3）In, the method that seed particles are layered on crucible inner bottom part is：By way of vibration screen, while vibration
While it is mobile, seed particles are uniformly fallen in crucible inner bottom part.
Step（4）In, it is by electromagnetic method：A magnetic field is arranged in crucible bottom.
Beneficial effect：The present invention uses seed particles, in crucible shop fixtures, increases external magnetic field, makes it according to regulation crystal orientation
Crucible bottom is laid in, by the way of fine melt ingot casting, so as to reduce dislocation and impurity, completes casting monocrystalline silicon.
Embodiment
The method that a kind of seed crystal for casting single crystal of the present invention orients, comprises the following steps：
（1）Oriented seed wafer is taken first, and crystal orientation is such as：（100）、（110）、（111）Deng, be ground, polish remove surface
Damaging layer, its surface is set to reach minute surface；
（2）Structure type magnetic macromolecule materials material is coated in the surface of polished seed wafer, 105 DEG C is heated to, continues 10
Minute；Then seed wafer is broken into the seed particles that particle diameter is 10-10000 microns；
（3）After normal crucible bottom coating spraying is completed, choose the equally distributed seed particles of particle and be layered on bottom in crucible
Portion, specifically can be by way of vibration screen, so as to realize uniform slow shop fixtures；
（4）Then by electromagnetic field, specific method is to arrange a magnetic field in crucible bottom so that seed particles and magnetic field alignment
Direction is consistent, so as to realize seed particles oriented alignment.
Further explanation is done to the present invention with reference to specific embodiment.
Embodiment
156mm*156mm*300mm monocrystal rods are taken, determine that its end face crystal orientation is on crystal direction finder（100）, in Buddha's warrior attendant
156mm*156mm*180um monocrystalline silicon pieces are cut on line slicer.Throwing is ground using polisher lapper is two-sided to silicon chip
Light removes damaging layer, removes thickness about 10um, surface reaches minute surface.By structure type magnetic macromolecule materials material coated in polished
Seed crystal face, be heated to 105 DEG C, 10 minutes time, then silicon chip crushed using ball mill, measured using laser particle analyzer
Determine particle diameter for 10um or so.Then Ludox is brushed in crucible bottom using brush, seed particles is placed on 500 mesh sieves
On the net, shake while move by it is evengranular fall in silica sol layer.Electromagnetism is placed below crucible bottom simultaneously
Iron is simultaneously opened, and such crystal orientation is（100）Seed particles be just uniformly arranged in crucible bottom surface.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (5)
1. a kind of method that seed crystal for casting single crystal orients, it is characterised in that：Comprise the following steps：
（1）Oriented seed wafer is taken first, is ground, is polished removal surface damage layer, its surface is reached minute surface；
（2）Structure type magnetic macromolecule materials material is coated in the surface of polished seed wafer, is then broken into seed particles；
（3）After normal crucible bottom coating spraying is completed, choose the equally distributed seed particles of particle and be layered on bottom in crucible
Portion；
（4）Then by electromagnetic field so that seed particles are consistent with magnetic field alignment direction, so as to realize seed particles orientation row
Cloth.
2. the method that the seed crystal according to claim 1 for casting single crystal orients, it is characterised in that：Step（2）In, will
Behind surface of the structure type magnetic macromolecule materials material coated in polished seed particles, 105 DEG C are heated to, and continue 10
Minute.
3. the method that the seed crystal according to claim 1 for casting single crystal orients, it is characterised in that：Step（2）In, will
Seed wafer is broken into the seed particles that particle diameter is 10-10000 microns.
4. the method that the seed crystal according to claim 1 for casting single crystal orients, it is characterised in that：Step（3）In, seed
The method that brilliant particle is layered on crucible inner bottom part is：By way of vibration screen, vibrate while move, seed particles are equal
It is even fall in crucible inner bottom part.
5. the method that the seed crystal according to claim 1 for casting single crystal orients, it is characterised in that：Step（4）In, borrow
The electromagnetic method is helped to be：A magnetic field is arranged in crucible bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710574846.XA CN107385505A (en) | 2017-07-14 | 2017-07-14 | A kind of method that seed crystal for casting single crystal orients |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710574846.XA CN107385505A (en) | 2017-07-14 | 2017-07-14 | A kind of method that seed crystal for casting single crystal orients |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107385505A true CN107385505A (en) | 2017-11-24 |
Family
ID=60339822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710574846.XA Pending CN107385505A (en) | 2017-07-14 | 2017-07-14 | A kind of method that seed crystal for casting single crystal orients |
Country Status (1)
| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102747414A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Production method for ingot casting monocrystalline silicon |
| CN103014850A (en) * | 2012-12-10 | 2013-04-03 | 常州大学 | Novel polycrystalline silicon ingot casting device and ingot casting method thereof |
| CN103469293A (en) * | 2013-09-02 | 2013-12-25 | 湖南红太阳光电科技有限公司 | Preparation method of polycrystalline silicon |
-
2017
- 2017-07-14 CN CN201710574846.XA patent/CN107385505A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102747414A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Production method for ingot casting monocrystalline silicon |
| CN103014850A (en) * | 2012-12-10 | 2013-04-03 | 常州大学 | Novel polycrystalline silicon ingot casting device and ingot casting method thereof |
| CN103469293A (en) * | 2013-09-02 | 2013-12-25 | 湖南红太阳光电科技有限公司 | Preparation method of polycrystalline silicon |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171124 |
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| RJ01 | Rejection of invention patent application after publication |