CN107370472A - Bridge-type output circuit, electrical stimulation circuit and electrical stimulation device - Google Patents
Bridge-type output circuit, electrical stimulation circuit and electrical stimulation device Download PDFInfo
- Publication number
- CN107370472A CN107370472A CN201710743151.XA CN201710743151A CN107370472A CN 107370472 A CN107370472 A CN 107370472A CN 201710743151 A CN201710743151 A CN 201710743151A CN 107370472 A CN107370472 A CN 107370472A
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- Prior art keywords
- pin
- type
- bridge
- output circuit
- type fet
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/021—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/36014—External stimulators, e.g. with patch electrodes
Abstract
The invention provides a kind of bridge-type output circuit, electrical stimulation circuit and electrical stimulation device.Wherein, a kind of bridge-type output circuit, including:N-type FET, the N-type FET are the upside efferent duct of bridge-type output circuit;Floating ground driving chip, is connected with N-type FET, for driving N-type FET to be turned on and off.Pass through technical scheme, it is possible to prevente effectively from it is unable to reach saturation state using common type of drive N-channel MOS pipe, circuit power consumption is caused to increase, output waveform is of poor quality, and the problem of efferent duct is easily damaged, to obtain the output of the bipolar pulse stimulating current of high quality, the driving power consumption that upper tube is opened in electro photoluminescence output circuit is reduced, so as to reduce Overall Power Consumption.
Description
Technical field
The present invention relates to floating ground actuation techniques field, in particular to a kind of bridge-type output circuit, a kind of electro photoluminescence electricity
Road, a kind of electrical stimulation device.
Background technology
Bioelectric stimulation equipment is a kind of energy output voltage, electric current to body area, stimulates muscle or nerve, so as to
Have the function that to improve muscular tone, treat equipment of flaccid muscles.Its circuit realiration generally comprises booster circuit, current control
Circuit, positive-negative polarity switching circuit.Wherein, positive-negative polarity switching circuit can make electrical stimulation apparatus have output positive negative pulse stuffing
Function.
The bridge circuit that the positive-negative polarity switching of electro photoluminescence typically uses is four arms realize electric bridge, respectively upper to control
Tubulation two, lower control pipe two, as shown in Figure 1:Q1, Q3 are that PNP triode either P-channel metal-oxide-semiconductor (is shown in Fig. 1
It is PNP triode);On the contrary Q1 and Q4 are opened, and Q2 and Q3 are closed and then realized that positive polarity exports, then realize negative polarity output.
Realize that Bipolar current exports using bridge circuit in electrical stimulation circuit, upper efferent duct Q1 and Q3 is used
PNP triode or P-channel metal-oxide-semiconductor, as shown in Figure 2.Usual electronic stimulation needs higher voltage, after some time it is possible to reach 50V-
100V even more highs, the way of output this first its base current, pull-up resistor when upper tube is opened can consume a large amount of power;
Secondly control voltage change amplitude huge during upper tube switch, cause switch time delay serious, software control is difficult, it is difficult to obtains high-quality
The boost pulse electric current output of amount.
Therefore, how to solve in electrical stimulation circuit that the delay of upper tube opening time is serious, control is difficult, and upper tube driving work(
The problem of rate consumption is big, turn into technical problem urgently to be resolved hurrily at present.
The content of the invention
It is contemplated that at least solves one of technical problem present in prior art or correlation technique.
Therefore, it is an aspect of the invention to propose a kind of bridge-type output circuit.
Another aspect of the present invention is to propose a kind of electrical stimulation circuit.
Another aspect of the invention is to propose a kind of electrical stimulation device.
In view of this, the present invention proposes a kind of bridge-type output circuit, including:N-type FET, the N-type FET
For the upside efferent duct of bridge-type output circuit;Floating ground driving chip, is connected with N-type FET, for driving N-type FET
It is turned on and off.
According to the bridge-type output circuit of the present invention, upside efferent duct is used as using N-channel MOS pipe, and use and drive floatingly
Chip drives upside efferent duct, so it is possible to prevente effectively from being unable to reach saturation using common type of drive N-channel MOS pipe
State, circuit power consumption is caused to increase, the problem of output waveform is of poor quality, and efferent duct is easily damaged, to obtain high quality
Bipolar pulse stimulating current exports, and the driving power consumption that upper tube is opened in electro photoluminescence output circuit is reduced, so as to reduce complete machine work(
Consumption.
In addition, according to the above-mentioned bridge-type output circuit of the present invention, there can also be technical characteristic additional as follows:
In the above-mentioned technical solutions, it is preferable that N-type FET includes the first N-type FET and the second N-type field-effect
Pipe, wherein, the drain electrode of the first N-type FET and the drain electrode of the second N-type FET are commonly connected to power supply;First N-type field
The source electrode of effect pipe, it is connected with the first lead-out terminal of bridge-type output circuit, for exporting the first electrical stimulation signal;Second N-type
The source electrode of FET, it is connected with the second lead-out terminal of bridge-type output circuit, for exporting the second electrical stimulation signal.
In the technical scheme, the first N-type FET and the upside that the second N-type FET is the bridge-type output circuit
Efferent duct, the drain electrode of the first N-type FET and the drain electrode of the second N-type FET are commonly connected to high voltage power supply and (accessed
The voltage of circuit), the source electrode of the source electrode of the first N-type FET and the second N-type FET is the output end of electrical stimulation signal,
It is connected respectively with first lead-out terminal and the second lead-out terminal, wherein first lead-out terminal and the second lead-out terminal difference receiving electrode
It is attached to after piece on human body, so exports the first electrical stimulation signal and the second electrical stimulation signal respectively, patient can be directly acted on
Body part, have the function that treatment.
In any of the above-described technical scheme, it is preferable that floating ground driving chip is floating including the first floating ground driving chip and second
Ground driving chip, wherein, the first floating ground driving chip, its VS pin is connected with the source electrode of the first N-type FET, its HO pin and the
The grid connection of one N-type FET;Second floating ground driving chip, its VS pin are connected with the source electrode of the second N-type FET, its
HO pin are connected with the grid of the second N-type FET.
In the technical scheme, the first floating ground driving chip is used to drive the first N-type FET, and second drives core floatingly
Piece is used to drive the second N-type FET.Specifically, when upside efferent duct needs to open, ground driving chip is floated by grid voltage
Raise, driving it voltage Vgs within nanosecond other time when opening N-type FET reaches more than 10V;Upper side pipe needs
When closing, ground driving chip is floated within rank time nanosecond by the driving voltage Vgs voltage pull-downs of N-type FET to 0V;
N-type FET so can be quickly switched on and off, simultaneously as its grid voltage amplitude of variation only has 10V or so, so
Drive of its driving power consumption well below the output circuit for making upper tube in correlation technique using PNP triode (or P-channel triode)
Dynamic power consumption.
In any of the above-described technical scheme, it is preferable that the first floating ground driving chip and the second floating ground driving chip are respectively provided with
VCC pin, COM pin, wherein, VCC pin are control source pin, and COM pin are grounded.
In the technical scheme, COM pin ground connection, VCC pin are control source pin, for accessing logic power, logic electricity
Source is relative to constant voltage over the ground, to provide operating voltage for floating ground driving chip.
In any of the above-described technical scheme, it is preferable that the first electric capacity is in series between VCC pin and COM pin.
In the technical scheme, by the first electric capacity of being connected between VCC pin and COM pin, reach the purpose of filtering, make filter
The logic fixed voltage exported after ripple is steady dc voltage, so as to lift the reliability and stability of circuit.
In any of the above-described technical scheme, it is preferable that the first floating ground driving chip and the second floating ground driving chip are respectively provided with
VB pin, diode is in series between VB pin and VCC pin.
In the technical scheme, VB pin are high side floating power supply pin, pass through two poles of being connected between VB pin and VCC pin
Pipe, because diode has single-phase on state characteristic, in the case of power-off suddenly can be avoided, in logic fixed voltage breakdown circuit
Component, cause device failure, which thereby enhance the reliability and stability of product, and contribute to reduce production cost.
In any of the above-described technical scheme, it is preferable that the second electric capacity is in series between VS pin and VB pin.
In the technical scheme, by the second electric capacity of being connected between VS pin and VB pin, reach the purpose of filtering, make filtering
The logic fixed voltage exported afterwards is steady dc voltage, further lifts the reliability and stability of circuit.
In any of the above-described technical scheme, it is preferable that also include:First resistor and second resistance, wherein, first resistor connects
It is connected between the first floating ground HO pin of driving chip and the grid of the first N-type FET;Second resistance is connected to the second floating ground
Between the grid of the HO pin of driving chip and the second N-type FET.
In the technical scheme, first resistor and second resistance are respectively the first N-type FET and the second N-type field-effect
The current-limiting resistance of pipe, it can avoid causing the first N-type FET and when electric current is excessive by first resistor and second resistance
The problem of two N-type FETs burn.
In any of the above-described technical scheme, it is preferable that also include:3rd electric capacity, the 3rd capacitance connection are imitated in the first N-type field
Should be between the source electrode of pipe and the source electrode of the second N-type FET.
In the technical scheme, by between the source electrode of the source electrode of the first N-type FET and the second N-type FET
Connect the 3rd electric capacity, reach the purpose of filtering, the electrical stimulation signal for making filtered output is stabilization signal.
In any of the above-described technical scheme, it is preferable that the first floating ground driving chip and the second floating ground driving chip are respectively provided with
IN pin,Pin, IN pin are pwm signal input pin;Pin is shut-off logic input pin.
In any of the above-described technical scheme, it is preferable that the resistance of first resistor and second resistance is equal.
The invention also provides the bridge-type output circuit in a kind of electrical stimulation circuit, including any of the above-described technical scheme.
According to the electrical stimulation circuit of the present invention, the use bridge-type output circuit in any technical scheme as described above, thus have
There is the whole beneficial effect of the bridge-type output circuit, will not be repeated here.
The invention also provides a kind of electrical stimulation device, including the bridge-type output circuit in any technical scheme as described above;
Or such as the electrical stimulation circuit in above-mentioned technical scheme.
According to the electrical stimulation device of the present invention, the use bridge-type output circuit in any technical scheme or as described above as described above
Electrical stimulation circuit in technical scheme, thus whole beneficial effects with the bridge-type output circuit or the electrical stimulation circuit,
This is repeated no more.
The additional aspect and advantage of the present invention will become obvious in following description section, or the practice by the present invention
Recognize.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination accompanying drawings below to embodiment
Substantially and it is readily appreciated that, wherein:
Fig. 1 shows the schematic diagram of the electrical stimulation circuit in correlation technique;
Fig. 2 shows the schematic diagram of the bridge circuit in correlation technique;
Fig. 3 shows the schematic diagram of bridge-type output circuit according to an embodiment of the invention.
Wherein, the corresponding relation in Fig. 3 between reference and component names is:
102 first N-type FETs, 104 second N-type FETs, 106 first floating ground driving chips, 108 second floating ground
Driving chip;110 first electric capacity, 112 diodes, 114 second electric capacity, 116 first resistors, 118 second resistances, 120 the 3rd electricity
Hold.
Embodiment
It is below in conjunction with the accompanying drawings and specific real in order to be more clearly understood that the above objects, features and advantages of the present invention
Mode is applied the present invention is further described in detail.It should be noted that in the case where not conflicting, the implementation of the application
Feature in example and embodiment can be mutually combined.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still, the present invention may be used also
To be different from other modes described here using other to implement, therefore, protection scope of the present invention is not by described below
Specific embodiment limitation.
The bridge-type output circuit in one embodiment of the invention is described referring to Fig. 3.
Embodiment according to the first aspect of the invention, it is proposed that a kind of bridge-type output circuit, including:N-type FET, should
N-type FET is the upside efferent duct of bridge-type output circuit;Floating ground driving chip, is connected with N-type FET, for driving
N-type FET is turned on and off.
Bridge-type output circuit provided by the invention, upside efferent duct is used as using N-channel MOS pipe, and uses and drive floatingly
Chip drives upside efferent duct, so it is possible to prevente effectively from being unable to reach saturation using common type of drive N-channel MOS pipe
State, circuit power consumption is caused to increase, the problem of output waveform is of poor quality, and efferent duct is easily damaged, to obtain high quality
Bipolar pulse stimulating current exports, and the driving power consumption that upper tube is opened in electro photoluminescence output circuit is reduced, so as to reduce complete machine work(
Consumption.
As shown in figure 3, in one embodiment of the invention, it is preferable that N-type FET includes the first N-type field-effect
The N-type FET 104 of pipe 102 and second, wherein, drain electrode and the second N-type FET 104 of the first N-type FET 102
Drain electrode is commonly connected to power supply HV;The source electrode of first N-type FET 102, connect with the first lead-out terminal 1 of bridge-type output circuit
Connect, for exporting the first electrical stimulation signal;The source electrode of second N-type FET 104, the second output end with bridge-type output circuit
Son 2 connects, for exporting the second electrical stimulation signal.
In this embodiment, the first N-type FET 102 and the second N-type FET 104 are the bridge-type output circuit
Upside efferent duct, the drain electrode of the first N-type FET 102 and the drain electrode of the second N-type FET 104 are commonly connected to high-tension electricity
Source (voltage for accessing circuit), the source electrode of the source electrode of the first N-type FET 102 and the second N-type FET 104 is electric thorn
The output end of energizing signal, it is connected respectively with the lead-out terminal 2 of first lead-out terminal 1 and second, wherein first lead-out terminal 1 and second
Lead-out terminal 2 is attached on human body after receiving electrode piece respectively, so exports the first electrical stimulation signal and the second electrical stimulation signal respectively,
Body area can be directly acted on, has the function that treatment.
In one embodiment of the invention, it is preferable that floating ground driving chip includes the first floating ground driving chip 106 and the
Two floating ground driving chips 108, wherein, first floats the source electrode company of ground driving chip 106, its VS pin and the first N-type FET 102
Connect, its HO pin is connected with the grid of the first N-type FET 102;Second floating ground driving chip 108, its VS pin and the second N-type field
The source electrode connection of effect pipe 104, its HO pin are connected with the grid of the second N-type FET 104.
In this embodiment, the first floating ground driving chip 106 is used to drive the first N-type FET 102, and second drives floatingly
Dynamic chip 108 is used to drive the second N-type FET 104.Specifically, when upside efferent duct needs to open, ground driving chip is floated
Grid voltage is raised, make N-type FET open when driven it within nanosecond other time voltage Vgs reach 10V with
On;When upper side pipe needs to close, ground driving chip is floated within rank time nanosecond by the driving voltage Vgs electricity of N-type FET
Pressure is pulled down to 0V;N-type FET so can be quickly switched on and off, simultaneously as its grid voltage amplitude of variation only has
10V or so, so its driving power consumption makees upper tube well below in correlation technique using PNP triode (or P-channel triode)
The driving power consumption of output circuit.
In one embodiment of the invention, it is preferable that the first floating ground floating ground of driving chip 106 and second driving chip
108 are respectively provided with VCC pin, COM pin, wherein, VCC pin are control source pin, and COM pin are grounded.
In this embodiment, COM pin are grounded, and VCC pin are control source pin, for accessing logic power, the logic power
It is relative to constant voltage over the ground, to provide operating voltage for floating ground driving chip.
In one embodiment of the invention, it is preferable that the first electric capacity 110 is in series between VCC pin and COM pin.
In this embodiment, by the first electric capacity 110 of being connected between VCC pin and COM pin, reach the purpose of filtering, make
The logic fixed voltage exported after filtering is steady dc voltage, so as to lift the reliability and stability of circuit.
In one embodiment of the invention, it is preferable that the first floating ground floating ground of driving chip 106 and second driving chip
108 are respectively provided with VB pin, and diode 112 is in series between VB pin and VCC pin.
In this embodiment, VB pin are high side floating power supply pin, pass through a diode of being connected between VB pin and VCC pin
112, because diode has single-phase on state characteristic, in the case of power-off suddenly can be avoided, logic fixed voltage breakdown circuit
In component, cause device failure, which thereby enhance the reliability and stability of product, and contribute to reduce production cost.
In one embodiment of the invention, it is preferable that the second electric capacity 114 is in series between VS pin and VB pin.
In this embodiment, by the second electric capacity 114 of being connected between VS pin and VB pin, reach the purpose of filtering, make filter
The logic fixed voltage exported after ripple is steady dc voltage, further lifts the reliability and stability of circuit.
In one embodiment of the invention, it is preferable that also include:First resistor 116 and second resistance 118, wherein, the
One resistance 116 is connected between the first floating ground HO pin of driving chip 106 and the grid of the first N-type FET 102;Second electricity
Resistance 118 is connected between the second floating ground HO pin of driving chip 108 and the grid of the second N-type FET 104.
In this embodiment, first resistor 116 and second resistance 118 are respectively the first N-type FET 102 and the 2nd N
The current-limiting resistance of type FET 104, it can avoid causing when electric current is excessive by first resistor 116 and second resistance 118
The problem of one N-type FET 102 and the second N-type FET 104 burn.
In one embodiment of the invention, it is preferable that also include:3rd electric capacity 120, the 3rd capacitance connection is in the first N
Between the source electrode of the source electrode of type FET 102 and the second N-type FET 104.
In this embodiment, by the source electrode of the first N-type FET 102 and the source electrode of the second N-type FET 104
Between connect the 3rd electric capacity 120, reach the purpose of filtering, the electrical stimulation signal for making filtered output is stabilization signal.
In one embodiment of the invention, it is preferable that the first floating ground floating ground of driving chip 106 and second driving chip
108 be respectively provided with IN pin,Pin, IN pin are pwm signal input pin;Pin is shut-off logic input pin.
In one embodiment of the invention, it is preferable that first resistor 116 is equal with the resistance of second resistance 118.
In one embodiment of the invention, it is preferable that the first floating ground floating ground of driving chip 106 and second driving chip
108 be the IR2104 of Infineon, and certainly, the floating ground driving chip of other same types can also realize said function.
Embodiment according to the second aspect of the invention, it is proposed that a kind of electrical stimulation circuit, including the bridge in above-described embodiment
Formula output circuit.
Electrical stimulation circuit provided by the invention, using the bridge-type output circuit in such as above-mentioned any embodiment, thus have
The whole beneficial effect of the bridge-type output circuit, will not be repeated here.
Embodiment according to the third aspect of the invention we, it is proposed that a kind of electrical stimulation device, including such as above-mentioned any embodiment
In bridge-type output circuit;Or such as the electrical stimulation circuit in above-mentioned embodiment.
Electrical stimulation device provided by the invention, it is using the bridge-type output circuit in such as above-mentioned any embodiment or real as described above
The electrical stimulation circuit in example, thus whole beneficial effects with the bridge-type output circuit or the electrical stimulation circuit are applied, herein not
Repeat again.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (12)
- A kind of 1. bridge-type output circuit, for electrical stimulation circuit, it is characterised in that including:N-type FET, the N-type FET are the upside efferent duct of the bridge-type output circuit;Floating ground driving chip, is connected with the N-type FET, for driving the N-type FET to be turned on and off.
- 2. bridge-type output circuit according to claim 1, it is characterised in thatThe N-type FET includes the first N-type FET and the second N-type FET, wherein,The drain electrode of the first N-type FET and the drain electrode of the second N-type FET are commonly connected to power supply;The source electrode of the first N-type FET, is connected with the first lead-out terminal of the bridge-type output circuit, for exporting the One electrical stimulation signal;The source electrode of the second N-type FET, it is connected with the second lead-out terminal of the bridge-type output circuit, for exporting the Two electrical stimulation signals.
- 3. bridge-type output circuit according to claim 2, it is characterised in thatThe floating ground driving chip includes the first floating ground driving chip and the second floating ground driving chip, wherein,Described first floating ground driving chip, its VS pin are connected with the source electrode of the first N-type FET, its HO pin and described the The grid connection of one N-type FET;Described second floating ground driving chip, its VS pin are connected with the source electrode of the second N-type FET, its HO pin and described the The grid connection of two N-type FETs.
- 4. bridge-type output circuit according to claim 3, it is characterised in thatDescribed first floating ground driving chip and second floating ground driving chip are respectively provided with VCC pin, COM pin, wherein, the VCC Pin is control source pin, the COM pin ground connection.
- 5. bridge-type output circuit according to claim 4, it is characterised in thatThe first electric capacity is in series between the VCC pin and the COM pin.
- 6. bridge-type output circuit according to claim 4, it is characterised in thatDescribed first floating ground driving chip and second floating ground driving chip are respectively provided with VB pin, the VB pin and the VCC pin Between be in series with diode.
- 7. bridge-type output circuit according to claim 6, it is characterised in thatThe second electric capacity is in series between the VS pin and the VB pin.
- 8. the bridge-type output circuit according to any one of claim 2 to 7, it is characterised in that also include:First resistor and Second resistance, wherein,The first resistor be connected to the HO pin of the described first floating ground driving chip and the first N-type FET grid it Between;The second resistance be connected to the HO pin of the described second floating ground driving chip and the second N-type FET grid it Between.
- 9. the bridge-type output circuit according to any one of claim 2 to 7, it is characterised in that also include:3rd electric capacity, source electrode and the second N-type FET of the 3rd capacitance connection in the first N-type FET Source electrode between.
- 10. the bridge-type output circuit according to any one of claim 3 to 7, it is characterised in thatDescribed first floating ground driving chip and second floating ground driving chip be respectively provided with IN pin,Pin,The IN pin are pwm signal input pin;It is describedPin is shut-off logic input pin.
- 11. a kind of electrical stimulation circuit, it is characterised in that export electricity including the bridge-type as any one of claim 1 to 10 Road.
- A kind of 12. electrical stimulation device, it is characterised in that including:Bridge-type output circuit as any one of claim 1 to 10;OrElectrical stimulation circuit as described in claim 11.
Priority Applications (1)
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CN201710743151.XA CN107370472A (en) | 2017-08-25 | 2017-08-25 | Bridge-type output circuit, electrical stimulation circuit and electrical stimulation device |
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CN201710743151.XA CN107370472A (en) | 2017-08-25 | 2017-08-25 | Bridge-type output circuit, electrical stimulation circuit and electrical stimulation device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108741261A (en) * | 2018-05-29 | 2018-11-06 | 李龙华 | Wellness approach integrated clothes and its working method |
CN116943022A (en) * | 2023-07-25 | 2023-10-27 | 北京领创医谷科技发展有限责任公司 | Charge balance circuit and charging and discharging method |
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US20040098067A1 (en) * | 2001-02-28 | 2004-05-20 | Jun Ohta | Built-in-eye- eyesight stimulating apparatus |
CN201127013Y (en) * | 2007-12-17 | 2008-10-01 | 许晓华 | Two-way whole bridge type gate driver capable of improving working voltage |
CN105496642A (en) * | 2016-01-13 | 2016-04-20 | 重庆大学 | Directional current technology-based multi-channel electrical stimulation system device for visual cortex nerve |
CN207124613U (en) * | 2017-08-25 | 2018-03-20 | 广东美的安川服务机器人有限公司 | Bridge-type output circuit, electrical stimulation circuit and electrical stimulation device |
-
2017
- 2017-08-25 CN CN201710743151.XA patent/CN107370472A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040098067A1 (en) * | 2001-02-28 | 2004-05-20 | Jun Ohta | Built-in-eye- eyesight stimulating apparatus |
CN201127013Y (en) * | 2007-12-17 | 2008-10-01 | 许晓华 | Two-way whole bridge type gate driver capable of improving working voltage |
CN105496642A (en) * | 2016-01-13 | 2016-04-20 | 重庆大学 | Directional current technology-based multi-channel electrical stimulation system device for visual cortex nerve |
CN207124613U (en) * | 2017-08-25 | 2018-03-20 | 广东美的安川服务机器人有限公司 | Bridge-type output circuit, electrical stimulation circuit and electrical stimulation device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108741261A (en) * | 2018-05-29 | 2018-11-06 | 李龙华 | Wellness approach integrated clothes and its working method |
CN116943022A (en) * | 2023-07-25 | 2023-10-27 | 北京领创医谷科技发展有限责任公司 | Charge balance circuit and charging and discharging method |
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Application publication date: 20171121 |