CN107359028B - A nano-silicon oxide insulator for VFTO suppression - Google Patents
A nano-silicon oxide insulator for VFTO suppression Download PDFInfo
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- CN107359028B CN107359028B CN201710778629.2A CN201710778629A CN107359028B CN 107359028 B CN107359028 B CN 107359028B CN 201710778629 A CN201710778629 A CN 201710778629A CN 107359028 B CN107359028 B CN 107359028B
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- silicon oxide
- nano silicon
- insulator
- vfto
- electricity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/42—Means for obtaining improved distribution of voltage; Protection against arc discharges
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Abstract
This application involves electrical equipment technical fields more particularly to a kind of for inhibiting the nano silicon oxide insulator of VFTO.The insulator includes: center insert, insulation layer, the area nano silicon oxide Pa electricity and mounting flange, wherein, the center insert is set to the top of a conulite, the cone is the insulation layer close to one end of the center insert, rest part is the area the nano silicon oxide Pa electricity, and the bottom in the area the nano silicon oxide Pa electricity is connected with the mounting flange.A large amount of contact interface is formd between nano silicon oxide and matrix in the area Pa electricity, when there is additional VFTO to act on insulator surface, the number of turns of VFTO can be improved in the contact interface, propagation of the VFTO in disc insulator is limited, it is inhibited to form normal electric field distribution on disc insulator surface.To substantially reduce the charge buildup on insulator side wall, keep the reliability of insulator when VFTO wave occurs.
Description
Technical field
This application involves electrical equipment technical fields more particularly to a kind of nano silicon oxide for inhibiting VFTO to insulate
Son.
Background technique
GIS (Gas Insulated Switchgear, gas insulation metal seal combined electrical apparatus) have occupied area with
Spatial volume is small, safe and reliable to operation, small by natural environment influence, breaker break performance is good, the various features such as easy for installation,
It is therefore widely used in AC Substation.Insulator is critically important insulating element in GIS, play fixed, insulation and
The effects of sealing.
Currently, common insulator includes center abaculus, insulation layer and attachment base in GIS device.When there is VFTO (Very
Fast transient overvoltage, fast transient overvoltage) when acting on the insulator surface, which can not make
Electric-charge-dissipating bears larger DC voltage so as to cause insulator, and then causes to bear quite high transient voltage on insulator,
Serious harm is brought to insulator stable operation.In addition, under the action of VFTO, insulator surface also will in GIS operational process
Introduce charge, this will make bus section, busbar section insulator in the process of running field distribution by serious distortion, it is easy to cause along face
Flashover, and then lead to electrical equipment damage or electric system large-area power-cuts.
In recent years, surface charge accumulation retention problems in current GIS operational process are solved, are insulated under the action of raising VFTO
Sub- operation stability will become and improve exchange GIS operation stability, and solve that unknown sudden strain of a muscle occurs in exchange GIS operational process
The key of network problem has great significance of scientific research and application value.However, so far, most of correlative study remains in
The study on the modification of simulation analysis and small test product sample block, the insulator for inhibiting VFTO with industrial application potential is still
So it is rarely reported.
Summary of the invention
The application provide it is a kind of for inhibiting the nano silicon oxide insulator of VFTO, with solve under the action of VFTO, absolutely
The problem of edge sublist surface charge is assembled, and GIS device fluctuation of service is caused.
It is a kind of for inhibiting the nano silicon oxide insulator of VFTO, comprising: center insert, insulation layer, nano silicon oxide are climbed
Electric area and mounting flange, wherein the center insert is set to the top of a conulite, and the cone is close to the center
One end of inserts is the insulation layer, and rest part is the area the nano silicon oxide Pa electricity, the area the nano silicon oxide Pa electricity
Bottom is connected with the mounting flange.
Optionally, the material in the area the nano silicon oxide Pa electricity is epoxy resin-matrix nano silicon oxide, wherein the nanometer
The content of silica any value between 10%-15%.
Optionally, the material of the insulation layer is epoxy resin-matrix aluminium oxide, wherein the content of aluminium oxide is 5%-10%
Between any value.
Optionally, the center insert includes abaculus, fixed ring and stay hook；The abaculus is column structure, described embedding
The side wall of block is equipped with multiple grooves and protrusion, and the protrusion is equipped with the fixed ring, and the fixed ring is equipped with institute
State stay hook.
Optionally, the upper bottom surface of the abaculus and bottom surface centre are respectively equipped with a location hole；The upper bottom surface
Or bottom surface is equipped with multiple bolt fixing holes.
Optionally, the apex angle of the cone is any value between 60 degree to 150 degree.
The technical scheme provided by the application includes following advantageous effects:
Insulator provided by the embodiments of the present application is equipped with the area nano silicon oxide Pa electricity, the nano silicon oxide in the area Pa electricity
A large amount of contact interface is formd between matrix, when there is additional VFTO to act on insulator surface, which can
To improve the number of turns of VFTO, propagation of the VFTO in disc insulator is limited, it is inhibited to be formed on disc insulator surface
Normal electric field distribution.To when VFTO wave occurs, the charge buildup on insulator side wall is substantially reduced, keep insulator can
By property.
Detailed description of the invention
In order to illustrate more clearly of the technical solution of the application, letter will be made to attached drawing needed in the embodiment below
Singly introduce, it should be apparent that, for those of ordinary skills, without any creative labor,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of structural representation of the nano silicon oxide insulator for inhibiting VFTO provided by the embodiments of the present application
Figure.
Fig. 2 is the structural schematic diagram of center insert provided by the embodiments of the present application.
The VFTO waveform diagram applied at Fig. 3 center insert provided by the embodiments of the present application.
Fig. 4 is the potential energy diagram at mounting flange provided by the embodiments of the present application.
Description of symbols:
1, center insert；11, abaculus；12, fixed ring；13, stay hook；14, location hole；15, bolt fixing hole；2, it insulate
Area；3, the area nano silicon oxide Pa electricity；4, mounting flange.
Specific embodiment
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the application
Example, and together with specification it is used to explain the principle of the application.
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, for those of ordinary skill in the art
Speech, without creative efforts, is also possible to obtain other drawings based on these drawings.
Embodiment 1
Fig. 1 is a kind of structural representation of the nano silicon oxide insulator for inhibiting VFTO provided by the embodiments of the present application
Figure.Referring to Fig. 1, which includes: center insert 1, insulation layer 2, the area nano silicon oxide Pa electricity 3 and mounting flange 4.Wherein,
The center insert 1 is set to the top of a conulite, which is divided into two parts, wherein close to the one of center insert 1
End is insulation layer 2, and rest part is the area nano silicon oxide Pa electricity 3, the bottom in the area nano silicon oxide Pa electricity 3 and mounting flange 4
It is connected.That is, the longitudinal section of the insulator is " V " type structure.
Optionally, insulation layer 2 provided by the embodiments of the present application is epoxy resin-matrix aluminium oxide edge area, and wherein aluminium oxide adds
Dosage can between 5%-10% any value, such as 8%.It should be noted that content described in the application refers both to matter
Measure percentage.
The area nano silicon oxide Pa electricity 3 is the area epoxy resin-matrix nano silicon oxide Pa electricity, wherein the addition of nano silicon oxide
Amount any value between 10%-15%, such as 12%.
Optionally, the apex angle of cone provided in this embodiment is any value between 60 degree to 150 degree, for example, the cone
Apex angle can be 90 degree.
Fig. 2 is the structural schematic diagram of center insert 1 provided by the embodiments of the present application.Referring to fig. 2, which includes
Abaculus 11, fixed ring 12 and stay hook 13.The abaculus 11 is column structure, which can be cylindrical body or cube
Aluminium block.The side wall of the column abaculus 11 is rough structure, is equipped with multiple grooves and protrusion.Wherein, part protrusion
It is equipped with the fixed ring 12, for example, being respectively equipped with one in equally distributed four protrusions on the column side wall sustained height line
Fixed ring 12.The fixed ring 12 is connect with raised interference, prevents fixed ring 12 from falling off from abaculus 11.The fixed ring 12 is any one
The side wall of side is equipped with stay hook 13, which is set in the fixed ring 12 by bolt.Specifically, the bolt is successively
Across stay hook 13,12 upper wall of fixed ring, protrusion, 12 lower wall of fixed ring, reuse during stay hook 13 is tightly fixed to by nut
On heart inserts 1.
It should be noted that in the embodiment of the present application, the above-mentioned protrusion being set to around abaculus 11, groove and stay hook
13, contribute to guarantee insulator during manufacture, center insert 1 can closely be connect with insulation layer 2, avoid making
During, center insert 1 falls off from insulator.
Optionally, the upper bottom surface of abaculus 11 provided by the embodiments of the present application and bottom surface centre are respectively equipped with one and determine
Position hole 14 guarantees insulator during manufacture, the position of center insert 1 is without departing from preset position for assigning positioning pin
It sets.
In addition, the upper bottom surface or bottom surface of the abaculus 11 are equipped with multiple bolt fixing holes 15, for consolidating the insulator
Due in GIS device.Illustratively, the quantity of the bolt fixing hole 15 is 4, is uniformly arranged on the surrounding of the location hole 14.
Embodiment 2
The all parts for the insulator that the embodiment of the present application 1 provides, including center insert 1, insulation layer 2, nano silicon oxide
The area Pa electricity 3 and mounting flange 4 are integrated connection structure, rather than connected by modes such as bolt, screws.The present embodiment
Then mainly the preparation method of the insulator is illustrated.
Integration insulator provided by the embodiments of the present application is prepared by the method for vacuum casting.In the operation of GIS
In the process, under the action of VFTO, insulator surface can introduce charge.Compared to being bolted, integrated connection structure has
Conducive to the resistance for reducing insulator itself, convenient for being gathered in the electric-charge-dissipating of insulator surface.
Specifically, integrated insulator preparation method provided by the embodiments of the present application is as follows:
(1) center insert 1 is prepared.Including preparing abaculus 11, in the protrusion installation fixed ring 12 of 11 side wall of abaculus, and use
Stay hook 13 is fixed in the fixed ring 12 by bolt；It further include preparing above-mentioned location hole 14 and bolt fixing hole 15.
(2) casting insulation area 2.Center insert 1 is placed in insulator mold, it is respectively that center is embedding using location hole 14
The upper bottom surface of part 1 is fixed in the upper and lower mould of mold, curing agent is added in epoxy resin-matrix aluminium oxide, using vacuum casting
Technique casting insulation area 2 makes insulation layer 2 and the side wall of center insert 1 combine closely.Protrusion, groove and the stay hook of the side wall
13 can promote the side wall brought close of insulation layer 2 and center insert 1, form a firm entirety.
(3) the casting area nano silicon oxide Pa electricity 3 and mounting flange 4.About four hours after insulation layer 2 is cast,
The material of insulation layer 2 has solidified, at this time on the basis of previous step, in epoxy resin-matrix silicon carbide filler or asphalt mixtures modified by epoxy resin
Curing agent is added in aliphatic radical Oxidation of SiC zinc mixture, the cast area nano silicon oxide Pa electricity 3 and mounting flange 4.To the filler
After solidification, insulator provided by the embodiments of the present application can be obtained.
Embodiment 3
It is respectively 0%, 5% and that the present embodiment uses the additive amount of the nano silicon oxide in the area nano silicon oxide Pa electricity 3 respectively
10% insulator carries out VFTO wave and applies experiment, to detect the insulator to the dissipation effect of surface charge, institute specific as follows
Show.
The VFTO waveform diagram applied at Fig. 3 center insert 1 provided by the embodiments of the present application.In each above-mentioned insulator
Apply the VFTO wave at center insert 1, and acquire high-field electrode to each insulator surface mounting flange 4 surface potential number
According to, obtain high-field electrode as shown in Figure 4 to insulator mounting flange 4 potential energy diagram.
From fig. 4, it can be seen that the table for the insulator that the additive amount of nano silicon oxide is 0% in the area nano silicon oxide Pa electricity 3
Secondly face potential highest is the insulator that additive amount is 5%, and the surface potential for the insulator that additive amount is 10% is minimum, and
And rejection ability increases as doping content increases.It can be seen that the insulator obviously plays the role of inhibiting VFTO insulation
The effect of sub- lower surface charge buildup.
This is because a large amount of contact interface is formd between nano silicon oxide and matrix in the area Pa electricity, it is additional when having
VFTO when acting on insulator surface, which can be improved the number of turns of VFTO, and limitation VFTO insulate in benzvalene form
Propagation in son inhibits it to form normal electric field distribution on disc insulator surface.To substantially reduce when VFTO wave occurs
Charge buildup on insulator side wall keeps the reliability of insulator.
It should be noted that the terms "include", "comprise" or its any other variant are intended to the packet of nonexcludability
Contain, so that article or equipment including a series of elements not only include those elements, but also including not arranging clearly
Other element out, or further include for elements inherent to such a process, method, article, or device.Not more
In the case where limitation, the element that is limited by sentence "including a ...", it is not excluded that including process, the side of the element
There is also other identical elements in method, article or equipment.
The above is only the specific embodiment of the application, is made skilled artisans appreciate that or realizing this Shen
Please.Various modifications to these embodiments will be apparent to one skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the application.Therefore, the application
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
It should be understood that the application is not limited to the content for being described above and being shown in the accompanying drawings, and can
To carry out various modifications and change without departing from the scope.Scope of the present application is only limited by the accompanying claims.
Claims (5)
1. a kind of for inhibiting the nano silicon oxide insulator of VFTO characterized by comprising center insert (1), insulation layer
(2), the area nano silicon oxide Pa electricity (3) and mounting flange (4), wherein the center insert (1) is set to the top of a conulite
End, the cone are the insulation layer (2) close to one end of the center insert (1), and rest part is the nano silicon oxide
The bottom in the area Pa electricity (3), the area the nano silicon oxide Pa electricity (3) is connected with the mounting flange (4)；The nano silicon oxide
The material in the area Pa electricity (3) be epoxy resin-matrix nano silicon oxide, wherein the content of the nano silicon oxide be 10%-15% it
Between any value.
2. according to claim 1 for inhibiting the nano silicon oxide insulator of VFTO, which is characterized in that the insulation layer
(2) material is epoxy resin-matrix aluminium oxide, wherein the content of aluminium oxide any value between 5%-10%.
3. according to claim 1 for inhibiting the nano silicon oxide insulator of VFTO, which is characterized in that the center is embedding
Part (1) includes abaculus (11), fixed ring (12) and stay hook (13)；The abaculus (11) is column structure, the abaculus (11)
Side wall be equipped with multiple grooves and protrusion, the protrusion is equipped with the fixed ring (12), sets on the fixed ring (12)
There are the stay hook (13).
4. according to claim 3 for inhibiting the nano silicon oxide insulator of VFTO, which is characterized in that the abaculus
(11) upper bottom surface and bottom surface centre is respectively equipped with a location hole (14)；The upper bottom surface or bottom surface are equipped with more
A bolt fixing hole (15).
5. according to claim 1 for inhibiting the nano silicon oxide insulator of VFTO, which is characterized in that the cone
Apex angle is any value between 60 degree to 150 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710778629.2A CN107359028B (en) | 2017-09-01 | 2017-09-01 | A nano-silicon oxide insulator for VFTO suppression |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710778629.2A CN107359028B (en) | 2017-09-01 | 2017-09-01 | A nano-silicon oxide insulator for VFTO suppression |
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| Publication Number | Publication Date |
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| CN107359028A CN107359028A (en) | 2017-11-17 |
| CN107359028B true CN107359028B (en) | 2019-03-15 |
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| CN201710778629.2A Active CN107359028B (en) | 2017-09-01 | 2017-09-01 | A nano-silicon oxide insulator for VFTO suppression |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108320869A (en) * | 2018-02-01 | 2018-07-24 | 清华大学 | A kind of direct current disc insulator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MX2010010627A (en) * | 2008-03-27 | 2011-03-29 | Otkrytoe Aktsionernoe Obschestvo Npo Streamer Star | High-voltage insulator and a high-voltage electric power line using said insulator. |
| CN204019828U (en) * | 2014-05-23 | 2014-12-17 | 山东泰开电器绝缘有限公司 | The casting mold of epoxy resin disc insulator |
| CN104371133A (en) * | 2014-11-04 | 2015-02-25 | 天津学子电力设备科技有限公司 | Method for eliminating electrostatic charges on surface of basin-type insulator in GIS |
| CN205050649U (en) * | 2015-10-22 | 2016-02-24 | 泰安泰山高压开关有限公司 | 220kV benzvalene form insulator |
| CN105448439A (en) * | 2015-12-16 | 2016-03-30 | 西安交通大学 | A method for interface treatment of UHV basin type insulator |
| CN105513723A (en) * | 2016-01-29 | 2016-04-20 | 麦克奥迪（厦门）电气股份有限公司 | Basin-type insulator and manufacturing process thereof |
| CN106847430B (en) * | 2017-01-24 | 2018-05-29 | 清华大学 | A kind of charge adaptively dissipates disc insulator |
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