CN107342319B - 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 - Google Patents
一种复合应变Si/SiGe异质结双极晶体管及其制备方法 Download PDFInfo
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- CN107342319B CN107342319B CN201710473915.8A CN201710473915A CN107342319B CN 107342319 B CN107342319 B CN 107342319B CN 201710473915 A CN201710473915 A CN 201710473915A CN 107342319 B CN107342319 B CN 107342319B
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- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 19
- 239000002131 composite material Substances 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
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Priority Applications (1)
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CN201710473915.8A CN107342319B (zh) | 2017-06-21 | 2017-06-21 | 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 |
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CN201710473915.8A CN107342319B (zh) | 2017-06-21 | 2017-06-21 | 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 |
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CN107342319A CN107342319A (zh) | 2017-11-10 |
CN107342319B true CN107342319B (zh) | 2019-12-10 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108649067B (zh) * | 2018-05-09 | 2020-12-01 | 燕山大学 | 一种太赫兹SOI复合应变Si/SiGe异质结双极晶体管及制备方法 |
CN108630748B (zh) * | 2018-05-09 | 2020-05-29 | 燕山大学 | 全平面太赫兹复合应变Si/SiGe异质结双极晶体管及制备方法 |
CN109148291A (zh) * | 2018-08-15 | 2019-01-04 | 深圳市诚朗科技有限公司 | 一种晶体管及其制作方法 |
CN109405860B (zh) * | 2018-09-19 | 2020-12-29 | 天津大学 | 基于天线直接匹配的锗硅异质结双极晶体管探测器 |
CN112992898A (zh) * | 2021-02-05 | 2021-06-18 | 重庆邮电大学 | 一种SiGe BiCMOS晶体管集成结构及其实现方法 |
CN113838926B (zh) * | 2021-08-16 | 2023-09-12 | 北京工业大学 | 一种具有高压和高增益模式的高频横向双极晶体管电路 |
CN113838923B (zh) * | 2021-09-23 | 2023-07-25 | 燕山大学 | 一种三维应变Si双极结型晶体管及其制备方法 |
Citations (3)
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CN101257043A (zh) * | 2007-02-28 | 2008-09-03 | 三洋电机株式会社 | 半导体装置及其制造方法 |
CN103050400A (zh) * | 2011-10-11 | 2013-04-17 | Nxp股份有限公司 | 双极晶体管制造方法、双极晶体管和集成电路 |
CN106298896A (zh) * | 2015-06-23 | 2017-01-04 | 格罗方德半导体公司 | 在有源装置区中具有埋入介电区的双极结晶体管 |
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US6849866B2 (en) * | 1996-10-16 | 2005-02-01 | The University Of Connecticut | High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration |
KR100817403B1 (ko) * | 2006-11-20 | 2008-03-27 | 전북대학교산학협력단 | 반도체 소자 구조 및 그 제조 방법 |
US7598539B2 (en) * | 2007-06-01 | 2009-10-06 | Infineon Technologies Ag | Heterojunction bipolar transistor and method for making same |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101257043A (zh) * | 2007-02-28 | 2008-09-03 | 三洋电机株式会社 | 半导体装置及其制造方法 |
CN103050400A (zh) * | 2011-10-11 | 2013-04-17 | Nxp股份有限公司 | 双极晶体管制造方法、双极晶体管和集成电路 |
CN106298896A (zh) * | 2015-06-23 | 2017-01-04 | 格罗方德半导体公司 | 在有源装置区中具有埋入介电区的双极结晶体管 |
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Inventor after: Zhou Chunyu Inventor after: Wang Guanyu Inventor after: Song Yutong Inventor before: Zhou Chunyu Inventor before: Wang Guanyu |
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Effective date of registration: 20220307 Address after: 518112 Room 601, building A3, No. 31, Bulan Road, xialilang community, Nanwan street, Longgang District, Shenzhen, Guangdong Province Patentee after: Shenzhen Chengxin Micro Technology Co.,Ltd. Address before: 066004 No. 438 west section of Hebei Avenue, seaport District, Hebei, Qinhuangdao Patentee before: Yanshan University |