CN107285270A - Integrated micro-system three-dimensional stacking structure of silicon substrate and preparation method thereof - Google Patents
Integrated micro-system three-dimensional stacking structure of silicon substrate and preparation method thereof Download PDFInfo
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- CN107285270A CN107285270A CN201710401342.8A CN201710401342A CN107285270A CN 107285270 A CN107285270 A CN 107285270A CN 201710401342 A CN201710401342 A CN 201710401342A CN 107285270 A CN107285270 A CN 107285270A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0074—3D packaging, i.e. encapsulation containing one or several MEMS devices arranged in planes non-parallel to the mounting board
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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Abstract
The invention discloses integrated micro-system three-dimensional stacking structure of a kind of silicon substrate and preparation method thereof, it is related to microwave and microelectronic packaging technology field, the present invention uses encapsulation stacking technique, realizes the miniaturization of the system of microwave circuit；MEMS body silicon packaging technologies and plant ball technique are blended, reduce the three-dimensionally integrated difficulty of microwave circuit, the interconnection up and down of microwave and control signal is carried out by through hole and soldered ball, reduce transmission loss, the space availability ratio of structure is improved simultaneously, two kinds of technical advantages are made full use of, high integration, high performance three-dimensional structure is realized；Microwave circuit is packaged using MEMS body silicon packaging technologies, the problem that conventional semiconductor packages technology faces in terms of microwave electromagnetic compatibility is solved.Meanwhile, using encapsulation stacking technique, improve the three-dimensionally integrated flexibility ratio of microwave system.
Description
Technical field
The present invention relates to microwave and microelectronic packaging technology field, more particularly to a kind of three-dimensional heap of the integrated micro-system of silicon substrate
Stack structure and preparation method thereof.
Background technology
With the development of microwave and millimeter wave technology, miniaturization, the integrated and multi-functional development as frequency microwave component
Direction.Miniaturization, integrated development are mainly reflected in following two aspects：（1）, exploitation multifunction chip, will can include
The microwave function list such as low-noise amplifier, driving amplifier, frequency mixer, wave filter, switch, numerical-control attenuator, digital phase shifter
Member is integrated in a microwave monolithic integrated circuit（MMIC）On, to realize the miniaturization of system.（2）, it is integrated using three dimension system
Scheme, carries out layering placement by the integrated circuit in microwave components, then realizes that three-dimensional microwave is more by the way of vertically interconnecting
Chip assembly.
2015, yellow-study is tender et al. to propose " the microwave circuit three-dimension packaging structure that a kind of ltcc substrate is stacked ", the skill
Art discloses the three-dimension packaging circuit structure that a kind of ltcc substrate is stacked, including upper strata ltcc substrate, lower floor's ltcc substrate and in
Between metal aluminium chassis, the technical pattern is simple, and precision is relatively low, while three-dimensional interconnection uses wire bonding, is applicable frequency relatively low.
2016, lucky brave et al. to propose " a kind of efficient restructural three-dimension packaging structure ", the technology is by several two dimensions
Primitive structure is constituted by being interconnected above and below brazing metal.The technology realizes the encapsulation of IC chip using packing material, and by simultaneously
Using side TSV forwarding methods, three-dimension packaging structure is formed by secondary structure build stack.The technology realizes control chip
High-density packages, but be not suitable for the three-dimensionally integrated of microwave and millimeter wave circuit.
2016, Wang Xinchao et al. invented " two-way integrated chip rewiring flush type POP encapsulating structures and its making side
Method ", the technology reroutes flush type POP encapsulation there is provided a kind of two-way integrated chip for the demand of flush type passive device and tied
Structure and preparation method thereof, it can multi-layer biaxially oriented embedment component, effectively saved substrate space and improved packaging technology
Integrated level, but active chip do not carried out embedding, because electromagnetic compatibility structure design is insufficient, be not suitable for microwave and millimeter wave
Circuit is integrated.
2016, Qi Fei et al. delivered " the three-dimensionally integrated radio-frequency receiving-transmitting micro-system based on MEMS technology ", and the technology is adopted
The small-sized encapsulated to microwave transmitting and receiving system is realized with MEMS body silicon packaging technologies, the technology realizes letter using silicon hole technology
Number interconnection up and down, but be due to that wafer thickness is limited by wafer scale bonding, it is impossible to more flexible three maintain
System is integrated.
Current three-dimensional stacking structure is mainly for the stacking of control chip and the stacking of adapter plate structure, using MEMS bodies
Silicon technology encapsulates microwave and millimeter wave circuit and carries out three-dimensional stacked, has no and refers to.
The content of the invention
The technical problem to be solved in the present invention is that there is provided a kind of integrated micro-system of silicon substrate for above-mentioned the deficiencies in the prior art
Three-dimensional stacking structure and preparation method thereof, realizes the three-dimensionally integrated process technology scheme of multi-chip microwave components, substantially increases
The integrated level and flexible design degree of the integrated micro-system products of silicon substrate MEMS.
In order to solve the above technical problems, the technical solution used in the present invention is：A kind of three-dimensional heap of the integrated micro-system of silicon substrate
Stack structure, it is characterised in that：Including first layer microwave circuit, second layer microwave circuit and control circuit；First layer microwave circuit,
Second layer microwave circuit and control circuit are packaged to form first layer microwave circuit packaging body, the encapsulation of second layer microwave circuit
The bottom surface of body and control circuit package, second layer microwave circuit packaging body and control circuit package is provided with soldered ball, the second layer
Microwave circuit packaging body is stacked on the first microwave circuit packaging body by soldered ball, and control circuit package is stacked on by soldered ball
On second layer microwave circuit packaging body.
Preferably, the first layer microwave circuit packaging body include the first silicon substrate, the second silicon substrate, the 3rd silicon substrate,
4th silicon substrate and first layer microwave monolithic integrated circuit；First silicon substrate, the second silicon substrate, the 3rd silicon substrate and the 4th silicon substrate
Plate is stacked gradually from bottom to top, offers through hole on silicon substrate, and the 4th silicon substrate upper surface is provided with the first bondable metal layer and the
One solder mask, first layer microwave monolithic integrated circuit is bonded in the cavity of silicon substrate by conducting resinl.
Preferably, wafer scale is used between first silicon substrate, the second silicon substrate, the 3rd silicon substrate and the 4th silicon substrate
Bonding technology is bonded, and first layer microwave monolithic integrated circuit is connected by bonding gold wire and silicon substrate.
Preferably, the second layer microwave circuit packaging body include the 5th silicon substrate, the 6th silicon substrate, the 7th silicon substrate,
8th silicon substrate and second layer microwave monolithic integrated circuit；5th silicon substrate, the 6th silicon substrate, the 7th silicon substrate and the 8th silicon substrate
Plate is stacked gradually from bottom to top, and through hole is offered on silicon substrate, and the 8th silicon substrate upper surface and the 5th silicon substrate lower surface are all provided with
There are the second bondable metal layer and the second solder mask, second layer microwave monolithic integrated circuit is bonded in the chamber of silicon substrate by conducting resinl
In body.
Preferably, wafer scale is used between the 5th silicon substrate, the 6th silicon substrate, the 7th silicon substrate and the 8th silicon substrate
Bonding technology is bonded, and second layer microwave monolithic integrated circuit is connected by bonding gold wire and silicon substrate.
A kind of preparation method of the integrated micro-system three-dimensional stacking structure of silicon substrate, it is characterised in that：Comprise the following steps：
1）, by first layer microwave circuit carry out miniaturization encapsulation, packaging body surface prepare the first bondable metal layer and first
Solder mask；
2）, by second layer microwave circuit carry out miniaturization encapsulation, packaging body surface prepare the second bondable metal layer and second
Solder mask；
3）, will control circuit be packaged；
4）, for step 1）With step 2）The silicon based package body of completion is cut, plants ball technique；
5）, encapsulation stacking, by complete plant ball second layer microwave circuit packaging body be stacked on first layer microwave circuit packaging body,
Control circuit package is stacked on second layer microwave circuit packaging body.
Preferably, the step 1）With step 2）Middle first layer microwave circuit and second layer microwave circuit use MEMS body silicon
Packaging technology is packaged.
Preferably, the step 3）Middle control circuit is sealed using ball grid array structure packaging technology or chip dimension wafer scale
Dress technique is packaged.
Preferably, the step 5）It is micro- that second layer microwave circuit packaging body is stacked to first layer by middle use reflow soldering process
On wave circuit packaging body, control circuit package is stacked on second layer microwave circuit packaging body.
It is using the beneficial effect produced by above-mentioned technical proposal：The present invention is by by MEMS body silicon packaging technologies and plant
Ball stacks technique and is combined, and solves the high-density packages of microwave and millimeter wave circuit, while using encapsulation stacking technique, by microwave milli
Metric wave circuit and control circuit etc. carry out three-dimensionally integrated.Interconnection uses silicon hole technology and soldered ball phase above and below signal between encapsulation
With reference to, can realize microwave and millimeter wave signal high-quality transmission.
Brief description of the drawings
Fig. 1 is the integrated micro-system three-dimensional stacking structure entirety sectional view of silicon substrate.
Fig. 2 is first layer microwave circuit package body structure sectional view.
Fig. 3 is second layer microwave circuit package body structure sectional view.
Fig. 4 is control circuit encapsulating structure schematic diagram.
In figure：11st, first layer microwave circuit packaging body；12nd, second layer microwave circuit packaging body；13rd, circuit package is controlled
Body；14th, soldered ball；001st, the first silicon substrate；002nd, the second silicon substrate；003rd, the 3rd silicon substrate；004th, the 4th silicon substrate；005th,
One solder mask；006th, the first bondable metal layer；007th, through hole；008th, first layer microwave monolithic integrated circuit；009th, conducting resinl；
010 bonding gold wire；021st, the 5th silicon substrate；022nd, the 6th silicon substrate；023rd, the 7th silicon substrate；024th, the 8th silicon substrate；025、
Second solder mask；026th, the second bondable metal layer；027th, second layer microwave monolithic integrated circuit.
Embodiment
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description, but the protection model of the present invention
Enclose be not limited to it is as described below.
As shown in figure 1, for the integrated micro-system three-dimensional stacking structure entirety sectional view of silicon substrate, including first layer microwave circuit,
Second layer microwave circuit and control circuit；First layer microwave circuit, second layer microwave circuit and control circuit are packaged shape
Into first layer microwave circuit packaging body 11, second layer microwave circuit packaging body 12 and control circuit package 13, second layer microwave
The bottom surface of circuit package 12 and control circuit package 13 is provided with soldered ball 14, and second layer microwave circuit packaging body 12 passes through soldered ball
14 are stacked on the first microwave circuit packaging body, and control circuit package 13 is stacked on second layer microwave circuit by soldered ball 14 and sealed
Fill on body 12.
As shown in Fig. 2 for first layer microwave circuit package body structure sectional view, including the first silicon substrate 001, the second silicon substrate
Plate 002, the 3rd silicon substrate 003, the 4th silicon substrate 004 and first layer microwave monolithic integrated circuit 008；First silicon substrate 001,
Two silicon substrates 002, the 3rd silicon substrate 003 and the 4th silicon substrate 004 are stacked gradually from bottom to top, and through hole is offered on silicon substrate
007, electric signal is realized by through hole 007 to be mutually connected up and down.The upper surface of 4th silicon substrate 004 is provided with the first bondable metal layer
006 and first solder mask 005, first layer microwave monolithic integrated circuit 008 is bonded in the cavity of silicon substrate by conducting resinl 009
In.
Wafer is used between first silicon substrate 001, the second silicon substrate 002, the 3rd silicon substrate 003 and the 4th silicon substrate 004
Level bonding technology is bonded, and first layer microwave monolithic integrated circuit 008 is connected by bonding gold wire 010 and silicon substrate.
As shown in figure 3, for second layer microwave circuit package body structure sectional view, including the 5th silicon substrate 021, the 6th silicon substrate
Plate 022, the 7th silicon substrate 023, the 8th silicon substrate 024 and second layer microwave monolithic integrated circuit 027；5th silicon substrate 021,
Six silicon substrates 022, the 7th silicon substrate 023 and the 8th silicon substrate 024 are stacked gradually from bottom to top, and through hole is offered on silicon substrate
007, electric signal is realized by through hole 007 to be mutually connected up and down.The upper surface of 8th silicon substrate 024 and the following table of the 5th silicon substrate 021
Face is equipped with the second bondable metal layer and the second solder mask 025, and second layer microwave monolithic integrated circuit 027 passes through conducting resinl 009
It is bonded in the cavity of silicon substrate.
Wafer is used between 5th silicon substrate 021, the 6th silicon substrate 022, the 7th silicon substrate 023 and the 8th silicon substrate 024
Level bonding technology is bonded, and second layer microwave monolithic integrated circuit 027 is connected by bonding gold wire 010 and silicon substrate.
As shown in figure 4, being control circuit package structural representation, control circuit uses standard plastic package process, realization pair
The BGA Package of control circuit chip.
The preparation method of the integrated micro-system three-dimensional stacking structure of silicon substrate, comprises the following steps：
1）, first layer microwave circuit is subjected to miniaturization encapsulation, prepare the first bondable metal layer 006 and the on the surface of packaging body
One solder mask 005.
1. the first silicon substrate 001, the second silicon substrate 002, the 3rd silicon substrate 003 and the 4th are processed using MEMS bulk silicon technologicals
Silicon substrate 004, carries out dry etch process, sputtering technology and electroplating technology.The upper surface of wherein the 4th silicon substrate 004 prepares the
One bondable metal layer 006 and the first solder mask 005.
2. the first silicon substrate 001 and the second silicon substrate 002 are bonded using wafer scale bonding technology.
3. the 3rd silicon substrate 003 and the 4th silicon substrate 004 are bonded using wafer scale bonding technology.
4. first layer microwave monolithic integrated circuit 008 is bonded to by silicon substrate using conducting resinl 009 using microwave assembly technology
In cavity.
5. the second silicon substrate 002 and the 3rd silicon substrate 003 are carried out by wafer scale bonding using wafer scale bonding technology, realized
Encapsulation to first layer microwave monolithic integrated circuit 008, electric signal above and below the realization of silicon hole 007 by interconnecting.
2）, by second layer microwave circuit carry out miniaturization encapsulation, packaging body surface prepare the second bondable metal layer and
Second solder mask 025.
1. the 5th silicon substrate 021, the 6th silicon substrate 022, the 7th silicon substrate 023 and the 8th are processed using MEMS bulk silicon technologicals
Silicon substrate 024, carries out dry etch process, sputtering technology and electroplating technology.The lower surface of wherein the 5th silicon substrate 021 prepares the
Two bondable metal layers and the second solder mask 025, the upper surface of the 8th silicon substrate 024 prepare the second bondable metal layer and the second welding resistance
Layer 025.
2. the 5th silicon substrate 021 and the 6th silicon substrate 022 are bonded using wafer scale bonding technology.
3. the 7th silicon substrate 023 and the 8th silicon substrate 024 are bonded using wafer scale bonding technology.
4. second layer microwave monolithic integrated circuit 027 is bonded to by silicon substrate using conducting resinl 009 using microwave assembly technology
In cavity.
5. the 6th silicon substrate 022 and the 7th silicon substrate 023 are carried out by wafer scale bonding using wafer scale bonding technology, realized
Encapsulation to second layer microwave monolithic integrated circuit 027, electric signal above and below the realization of silicon hole 007 by interconnecting.
3）, will control circuit be packaged.
Using standard plastic package process, the BGA Package to control circuit chip is realized.
4）, for step 1）With step 2）The silicon based package body of completion is cut, plants ball technique.
1. scribing, by first layer microwave circuit packaging body 11 and second layer microwave circuit packaging body 12 by scribing process,
Burst is into single individual packages.
2. reflow soldering process is used, carries out planting ball technique in the bottom surface of the silicon substrate of second layer microwave circuit packaging body 12.
5）, encapsulation stacking, by complete plant ball second layer microwave circuit packaging body 12 be stacked to first layer microwave circuit envelope
Fill on body 11, control circuit package 13 is stacked on second layer microwave circuit packaging body 12.
1. the second layer microwave circuit packaging body 12 for completing to plant ball is stacked to by first layer microwave electricity using reflow soldering process
On road packaging body 11, electric signal above and below soldered ball 14 and the realization of through hole 007 by interconnecting.
2. using reflow soldering process circuit package 13 will be controlled to be stacked on second layer microwave circuit packaging body 12.
3. cleaning is carried out, the stacking technique of three layers of encapsulated circuit is completed.
After adopting the above technical scheme, invention uses encapsulation stacking technique, the miniaturization of the system of microwave circuit is realized；
MEMS body silicon packaging technologies and plant ball technique are blended, the three-dimensionally integrated difficulty of microwave circuit is reduced, passes through through hole 007 and weldering
Ball 14 carries out the interconnection up and down of microwave and control signal, reduces transmission loss, while the space availability ratio of structure is improved, it is fully sharp
With two kinds of technical advantages, high integration, high performance three-dimensional structure are realized；Microwave circuit is entered using MEMS body silicon packaging technologies
Row encapsulation, solves the problem that conventional semiconductor packages technology faces in terms of microwave electromagnetic compatibility.Meanwhile, using encapsulation stacking
Technique, improves the three-dimensionally integrated flexibility ratio of microwave system.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (9)
1. a kind of integrated micro-system three-dimensional stacking structure of silicon substrate, it is characterised in that：Including first layer microwave circuit, second layer microwave
Circuit and control circuit；First layer microwave circuit, second layer microwave circuit and control circuit are packaged that to form first layer micro-
Wave circuit packaging body（11）, second layer microwave circuit packaging body（12）With control circuit package（13）, second layer microwave circuit
Packaging body（12）With control circuit package（13）Bottom surface be provided with soldered ball（14）, second layer microwave circuit packaging body（12）Pass through
Soldered ball（14）It is stacked on the first microwave circuit packaging body, controls circuit package（13）Pass through soldered ball（14）It is stacked on the second layer
Microwave circuit packaging body（12）On.
2. the integrated micro-system three-dimensional stacking structure of silicon substrate according to claim 1, it is characterised in that：The first layer microwave
Circuit package（11）Including the first silicon substrate（001）, the second silicon substrate（002）, the 3rd silicon substrate（003）, the 4th silicon substrate
（004）With first layer microwave monolithic integrated circuit（008）；First silicon substrate（001）, the second silicon substrate（002）, the 3rd silicon substrate
（003）With the 4th silicon substrate（004）Stack gradually from bottom to top, through hole is offered on silicon substrate（007）, the 4th silicon substrate
（004）Upper surface is provided with the first bondable metal layer（006）With the first solder mask（005）, first layer microwave monolithic integrated circuit
（008）Pass through conducting resinl（009）It is bonded in the cavity of silicon substrate.
3. the integrated micro-system three-dimensional stacking structure of silicon substrate according to claim 2, it is characterised in that：First silicon substrate
（001）, the second silicon substrate（002）, the 3rd silicon substrate（003）With the 4th silicon substrate（004）Between use wafer scale bonding technology
It is bonded, first layer microwave monolithic integrated circuit（008）Pass through bonding gold wire（010）With silicon substrate connection.
4. the integrated micro-system three-dimensional stacking structure of silicon substrate according to claim 1, it is characterised in that：The second layer microwave
Circuit package（12）Including the 5th silicon substrate（021）, the 6th silicon substrate（022）, the 7th silicon substrate（023）, the 8th silicon substrate
（024）With second layer microwave monolithic integrated circuit（027）；5th silicon substrate（021）, the 6th silicon substrate（022）, the 7th silicon substrate
（023）With the 8th silicon substrate（024）Stack gradually from bottom to top, through hole is offered on silicon substrate（007）, the 8th silicon substrate
（024）Upper surface and the 5th silicon substrate（021）Lower surface be equipped with the second bondable metal layer and the second solder mask（025）, the
Two layers of microwave monolithic integrated circuit（027）Pass through conducting resinl（009）It is bonded in the cavity of silicon substrate.
5. the integrated micro-system three-dimensional stacking structure of silicon substrate according to claim 4, it is characterised in that：5th silicon substrate
（021）, the 6th silicon substrate（022）, the 7th silicon substrate（023）With the 8th silicon substrate（024）Between use wafer scale bonding technology
It is bonded, second layer microwave monolithic integrated circuit（027）Pass through bonding gold wire（010）With silicon substrate connection.
6. a kind of preparation method of the integrated micro-system three-dimensional stacking structure of silicon substrate, it is characterised in that：Comprise the following steps：
1）, by first layer microwave circuit carry out miniaturization encapsulation, packaging body surface prepare the first bondable metal layer（006）And
First solder mask（005）；
2）, by second layer microwave circuit carry out miniaturization encapsulation, packaging body surface prepare the second bondable metal layer and second
Solder mask（025）；
3）, will control circuit be packaged；
4）, for step 1）With step 2）The silicon based package body of completion is cut, plants ball technique；
5）, encapsulation stacking, will complete plant ball second layer microwave circuit packaging body（12）It is stacked to the encapsulation of first layer microwave circuit
Body（11）On, circuit package will be controlled（13）It is stacked to second layer microwave circuit packaging body（12）On.
7. the preparation method of the integrated micro-system three-dimensional stacking structure of silicon substrate according to claim 6, it is characterised in that：The step
Rapid 1）With step 2）Middle first layer microwave circuit and second layer microwave circuit are packaged using MEMS body silicon packaging technologies.
8. the preparation method of the integrated micro-system three-dimensional stacking structure of silicon substrate according to claim 6, it is characterised in that：The step
Rapid 3）Middle control circuit is packaged using ball grid array structure packaging technology or chip dimension wafer-level packaging technique.
9. the preparation method of the integrated micro-system three-dimensional stacking structure of silicon substrate according to claim 6, it is characterised in that：The step
Rapid 5）Middle use reflow soldering process is by second layer microwave circuit packaging body（12）It is stacked to first layer microwave circuit packaging body（11）
On, circuit package will be controlled（13）It is stacked to second layer microwave circuit packaging body（12）On.
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Cited By (6)
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| CN108083223A (en) * | 2018-01-15 | 2018-05-29 | 杭州臻镭微波技术有限公司 | The radio frequency micro-system and its manufacturing method of a kind of silicon based three-dimensional Manufacturing resource |
| CN110034095A (en) * | 2019-02-28 | 2019-07-19 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | It is three-dimensional stacked to encapsulate integrated TR mould group |
| CN110444510A (en) * | 2019-07-02 | 2019-11-12 | 中国航空工业集团公司雷华电子技术研究所 | A kind of silicon based package body |
| CN111224688A (en) * | 2019-12-30 | 2020-06-02 | 中国电子科技集团公司第十三研究所 | Radio frequency front end chip structure |
| CN111613588A (en) * | 2020-03-13 | 2020-09-01 | 上海航天电子通讯设备研究所 | Reconfigurable three-dimensional microsystem packaging structure and packaging method |
| CN114852951A (en) * | 2022-03-18 | 2022-08-05 | 中国电子科技集团公司第十三研究所 | W-band multichannel transmitting and receiving system and preparation method |
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