CN107238786B - Method and device for MOSFET element model parameter extraction - Google Patents
Method and device for MOSFET element model parameter extraction Download PDFInfo
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- CN107238786B CN107238786B CN201710272323.XA CN201710272323A CN107238786B CN 107238786 B CN107238786 B CN 107238786B CN 201710272323 A CN201710272323 A CN 201710272323A CN 107238786 B CN107238786 B CN 107238786B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2623—Circuits therefor for testing field effect transistors, i.e. FET's for measuring break-down voltage therefor
Abstract
The invention belongs to device Modeling fields, are related to a kind of test method and device for MOSFET element model parameter extraction.Method includes: the leakage body junction breakdown voltage based on the MOSFET element, is biased in not androgynous curve test on the lower side using different body ends.Device includes: voltage acquisition unit, for obtaining the voltage used in not androgynous curve test on the lower side；Curve test unit, the voltage for being determined according to the voltage acquisition unit carry out not androgynous curve test on the lower side, obtain test data；Parameter extraction unit, the test data for being obtained according to the curve test unit carry out the MOSFET element model parameter extraction.Thus solve it is in the prior art can not take into account the technical issues of not only can extracting comprehensively body bias effect parameter but also not influencing device Parameter Extraction result, having reached ensures MOS device test result correctly and takes into account the technical effect of bulk effect parameter extraction.
Description
Technical field
The invention belongs to device Modeling field, in particular to a kind of side for MOSFET element model parameter extraction
Method and device.
Background technique
Body bias effect (also known as bulk effect) is MOSFET (Metal Oxide Semiconductor Field Effect
One of Transistor Metal Oxide Semiconductor Field Effect Transistor) the most important second-order effects of device, for NMOS,
The generation for phenomena such as body end adds back bias voltage to will lead to threshold voltage increase, the body bias effect in MOSFET element model parameter extraction
The extraction of relevant parameter is particularly important.
By taking PMOS as an example, according to BSIM, (Berkeley short-channel IGFET model Berkeley short channel is exhausted
Geo-gate field-effect transistor model) handbook, it generally requires and carries out following items test progress parameter extraction:
1) Ids_Vgs vds=-0.05at different vbs is tested, i.e., not androgynous linear zone transfer curve on the lower side
Test, wherein X-axis is Vgs (voltage between Vgatesource, that is, grid and source), Y-axis Ids, P Vbs
(voltage between Vbodysource, that is, body and source), linear zone be because of vds (Vdrainsource, that is, leakage with
Voltage between source)=- 0.05；
2) Ids_Vgs vds=-Vdd at different vbs is tested, i.e., not androgynous saturation region transfer curve on the lower side
Test, wherein X-axis is Vgs, Y-axis Ids, P Vbs, because of vds=-vdd when saturation region；
3) Ids_Vds@vbs=0at different vgs is tested, i.e., body is the output song under 0 lower different grid voltages partially
Line test, wherein X-axis is Vds, Y-axis Ids, P Vgs；
4) Ids_Vds@vbs=vbb at different vgs is tested, i.e., body is defeated under the different grid voltages under vbb partially
Curve out, wherein X-axis is Vds, Y-axis Ids, P Vgs.
In general 1) 2) in two tests the maximum value of vbs it is identical and with curve 4) in vbb it is identical, and ordinary circumstance
Under can take Vdd.
For leaking MOSFET of the body junction breakdown voltage less than twice of Vdd, if vbb takes Vdd, the 2) Xiang Shihui is being surveyed
Puncture, lead to device damage, although device does not lose MOSFET characteristic, device property can change, in turn
Test result after influence；Test data in this way is with regard to unreliable, and subsequent parameter extraction is with regard to nonsensical.If vbb is selected
Vdd is subtracted for breakdown voltage, and device is then not in breakdown, but the 1) item test will not comprehensively, the inclined range of the lining of test
It is partially narrow, and then the extraction of body bias effect parameter is influenced, it is unable to satisfy requirement of the parameter extraction to data.
Therefore, prior art presence can not take into account and not only can extract comprehensively body bias effect parameter but also be unable to damage device shadow
Ring the defect of device Parameter Extraction result.
Summary of the invention
In view of the above problems, it proposes on the present invention overcomes the above problem or at least be partially solved in order to provide one kind
State the test method and device for MOSFET element model parameter extraction of problem.
In a first aspect, providing a kind of method for MOSFET element model parameter extraction in the embodiment of the present invention, wrap
It includes:
Leakage body junction breakdown voltage based on the MOSFET element, using different in not androgynous curve test on the lower side
Body end biasing.
With reference to first aspect, the present invention is described to be based on the MOSFET device in the first implementation of first aspect
The leakage body junction breakdown voltage of part is biased in not androgynous curve test on the lower side using different body ends, comprising:
Leakage body junction breakdown test is carried out, the leakage body junction breakdown voltage Vdb of the MOSFET element is obtained；
Determine the difference that one is less than the leakage body junction breakdown voltage Vdb and MOSFET element supply voltage Vdd
Voltage, the body end bias voltage Vbb of the curve test as the MOSFET element；
It is partially the linear zone transfer curve test under the body end bias voltage Vbb using the supply voltage Vdd as body
In body and source between voltage Vbs maximum value；
The second voltage is obtained the body end bias voltage Vbb that module obtains to turn as the saturation region under the inclined Vbb of the body
Move the maximum value of the body in curve test and the voltage Vbs between source.
The first implementation with reference to first aspect, the present invention are described in second of implementation of first aspect
Not androgynous curve test on the lower side includes:
Not androgynous linear zone transfer curve test on the lower side；
Not androgynous transfer curve test in saturation region on the lower side；
Body is the curve of output test under 0 different grid voltages partially；
Body is the curve of output test under the different grid voltages of Vbb partially.
The first implementation with reference to first aspect, the present invention are described in the third implementation of first aspect
The voltage of the difference of the leakage body junction breakdown voltage Vdb and device power source voltage Vdd will be less than as the MOSFET element
Curve test body end bias voltage Vbb, comprising:
The difference (Vdb-Vdd) of the leakage body junction breakdown voltage and the supply voltage of the MOSFET element is divided into n etc.
Part, every part is d；
Body end bias voltage Vbb by (n-1) * d as the curve test of the MOSFET element；
Wherein, n is natural number.
Second of implementation with reference to first aspect, the present invention also wrap in the 4th kind of implementation of first aspect
It includes, carries out the MOSFET element model parameter according to the test data obtained in the not androgynous curve test on the lower side and mention
It takes.
The second aspect of the present invention provides a kind of device for MOSFET element model parameter extraction, comprising:
Voltage acquisition unit, for obtaining the voltage used in not androgynous curve test on the lower side；
Curve test unit, the voltage for being determined according to the voltage acquisition unit carry out not androgynous curve on the lower side and survey
Examination obtains test data；
Parameter extraction unit, the test data for being obtained according to the curve test unit carry out the MOSFET element
Model parameter extraction.
In conjunction with second aspect, the present invention is in the first implementation of second aspect, the voltage acquisition unit, packet
It includes:
First voltage obtains module, for obtaining the leakage body junction breakdown voltage Vdb of the MOSFET element；
Second voltage obtains module, for determining the leakage body junction breakdown for being less than the first voltage and obtaining module acquisition
The voltage of the difference of voltage Vdb and device power source voltage Vdd, the body end biasing of the curve test as the MOSFET element
Voltage Vbb；
Tertiary voltage obtains module, is partially that the second voltage obtains for determining using the supply voltage Vdd as body
The maximum of the body in the test of linear zone transfer curve under the body end bias voltage Vbb that module obtains and the voltage Vbs between source
Value；
4th voltage obtains module, and the second voltage is obtained the body end bias voltage Vbb that module obtains for determining
Maximum value as the body in the saturation region transfer curve test under the inclined Vbb of the body and the voltage Vbs between source.
In conjunction with second aspect, in second of implementation of second aspect, the curve test unit includes: the present invention
First test module, the voltage for being determined according to the voltage acquisition unit carry out not androgynous linear zone on the lower side
Transfer curve test, obtains test data；
Second test module, the voltage for being determined according to the voltage acquisition unit carry out not androgynous saturation region on the lower side
Transfer curve test, obtains test data；
Third test module, the voltage for being determined according to the voltage acquisition unit carry out the different grid voltages that body is 0 partially
Under curve of output test, obtain test data；
4th test module, the voltage for being determined according to the voltage acquisition unit carry out the different grid that body is Vbb partially
The curve of output of pressure is tested, and test data is obtained.
In conjunction with the first implementation of second aspect, the present invention is described in the third implementation of second aspect
Second voltage obtains module, comprising:
Computing module, for by the first voltage obtain module obtain leakage body junction breakdown voltage Vdb with it is described
The difference (Vdb-Vdd) of the supply voltage Vdd of MOSFET element is divided into n equal portions, and every part is d；
Body end bias voltage determining module, for calculating curve test of acquisition (n-1) the * d as the MOSFET element
Body end bias voltage Vbb；
Wherein, n is natural number.
The invention has the benefit that the embodiment of the invention provides the tests for MOSFET element model parameter extraction
Method obtains breakdown voltage Vdb by the leakage body junction characteristic of test MOS device, determines Vbb, and value is less than Vdb-Vdd；Vbb
Determination ensure that device property is unaffected, ensure that the accuracy of test data.Determine the 1) Vbs maximum value in item test
For Vdd；The integrality that ensure that voltage tester scope is conducive to the extraction of bulk effect parameter.Determining the, 2) Vbs is most in item test
Big value is Vbb.The voltage thereby determined that carries out 1) 2) 3) 4) test of item, and solving to exist in the prior art can not take into account both
The technical issues of body bias effect parameter can be extracted comprehensively and do not influence device Parameter Extraction result, it is ensured that MOS device test knot
Fruit correctly takes into account bulk effect parameter extraction again.
Detailed description of the invention
Fig. 1 shows the structure chart of an apparatus in accordance with one embodiment of the invention；
Fig. 2 is that front and back device property comparison diagram is tested using prior art test method；
Fig. 3 is that front and back device property comparison diagram is tested using test method of the present invention.
Specific embodiment
The present invention provides a kind of method and apparatus for MOSFET element model parameter extraction, to solve in the prior art
Can not take into account the technical issues of not only can extracting comprehensively body bias effect parameter but also not influencing device Parameter Extraction result.
Technical solution in order to better understand the present invention, below by attached drawing and specific embodiment to the technology of the present invention side
Case is described in detail, it should be understood that the specific features in the embodiment of the present invention and embodiment are to technical solution of the present invention
Detailed description, rather than the restriction to technical solution of the present invention, in the absence of conflict, the embodiment of the present invention and implementation
Technical characteristic in example can be combined with each other.
Embodiment 1
The present embodiment provides a kind of methods for MOSFET element model parameter extraction, comprising: is based on the MOSFET
The leakage body junction breakdown voltage of device is biased in not androgynous curve test on the lower side using different body ends.
As an alternative embodiment, the leakage body junction breakdown voltage based on the MOSFET element, in difference
It is biased in body curve test on the lower side using different body ends, comprising:
Leakage body junction breakdown test is carried out, the leakage body junction breakdown voltage Vdb of the MOSFET element is obtained；
Determine the difference that one is less than the leakage body junction breakdown voltage Vdb and MOSFET element supply voltage Vdd
Voltage, the body end bias voltage Vbb of the curve test as the MOSFET element；The determination of Vbb ensure that device property not
It is impacted, it ensure that the accuracy of test data.
It is partially the linear zone transfer curve test under the body end bias voltage Vbb using the supply voltage Vdd as body
In body and source between voltage Vbs maximum value；The integrality that ensure that voltage tester scope is conducive to bulk effect parameter
It extracts.
The second voltage is obtained the body end bias voltage Vbb that module obtains to turn as the saturation region under the inclined Vbb of the body
Move the maximum value of the body in curve test and the voltage Vbs between source.
As an alternative embodiment, the not androgynous curve test on the lower side includes:
Not androgynous linear zone transfer curve test on the lower side；1) the item test introduced in background technique.
Not androgynous transfer curve test in saturation region on the lower side；2) the item test introduced in background technique.
Body is the curve of output test under 0 different grid voltages partially；3) the item test introduced in background technique.
Body is the curve of output test under the different grid voltages of Vbb partially.4) the item test introduced in background technique.
As an alternative embodiment, described will be less than the leakage body junction breakdown voltage Vdb and device power source electricity
Press the voltage of the difference of Vdd as the body end bias voltage Vbb of the curve test of the MOSFET element, comprising:
The difference (Vdb-Vdd) of the leakage body junction breakdown voltage and the supply voltage of the MOSFET element is divided into n etc.
Part, every part is d；
Body end bias voltage Vbb by (n-1) * d as the curve test of the MOSFET element；
Wherein, n is natural number.
As an alternative embodiment, further including, according to the survey obtained in the not androgynous curve test on the lower side
It tries data and carries out the MOSFET element model parameter extraction.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, to this hair
It is bright to be described in detail.
Step 1: the leakage body junction characteristic of test MOS device obtains breakdown voltage Vdb, determines Vbb, and value is less than Vdb-
Vdd。
Step 2: determining the, 1) Vbs maximum value is Vdd in item test.
Step 3: determining the, 2) Vbs maximum value is Vbb in item test.
Step 4: carrying out 1) 2) 3) 4) test of item according to the voltage that above-mentioned steps determine.
Step 5: the test data obtained according to step 4 carries out MOSFET parameter extraction.
It is emphasized that above method step not necessarily executes in sequence, as long as being able to achieve the purpose of the present invention, appoint
Change in what step all should be within the scope of the present invention.
Below by taking a certain 5V technique PMOS as an example, and referring to attached drawing 2,3, to technical solution of the present invention and its technical effect
It is described in further details.
Step 1: the leakage body junction breakdown voltage of test MOS device is 7.5V, Vdb-VDD=2.5V, determines that Vbb is 2V.
Step 2: determining the, 1) Vbs is up to 5V in item test.
Step 3: determining the, 2) Vbs is up to 2V in item test.
Step 4: carrying out 1) 2) 3) 4) test of item according to the voltage that above-mentioned steps determine.
Step 5: the test data obtained according to step 4 carries out MOSFET parameter extraction.
Fig. 2 is to test front and back device property using conventional test methodologies to compare；
Fig. 3 is to test front and back device property using this patent test method to compare.
Can be seen that the method that this patent provides by the comparison of Fig. 2 and Fig. 3 can guarantee that device property is unaffected, protect
The correctness of test data is demonstrate,proved, simultaneously because the 1) Vbs maximum takes 5V in item test, also ensures the integrality for serving as a contrast inclined data,
It ensure that the accuracy of lining partial correlation parameter extraction.
Embodiment 2
As shown in Figure 1, the present embodiment provides a kind of devices for MOSFET element model parameter extraction, comprising:
Voltage acquisition unit 11, for obtaining the voltage used in not androgynous curve test on the lower side；
Curve test unit 12, the voltage for being determined according to the voltage acquisition unit carry out not androgynous curve on the lower side
Test obtains test data；
Parameter extraction unit 13, the test data for being obtained according to the curve test unit carry out the MOSFET device
Part model parameter extraction.
As an alternative embodiment, the voltage acquisition unit, comprising:
First voltage obtains module, for obtaining the leakage body junction breakdown voltage Vdb of the MOSFET element；
Second voltage obtains module, for determining the leakage body junction breakdown for being less than the first voltage and obtaining module acquisition
The voltage of the difference of voltage Vdb and device power source voltage Vdd, the body end biasing of the curve test as the MOSFET element
Voltage Vbb；
Tertiary voltage obtains module, is partially that the second voltage obtains for determining using the supply voltage Vdd as body
The maximum of the body in the test of linear zone transfer curve under the body end bias voltage Vbb that module obtains and the voltage Vbs between source
Value；
4th voltage obtains module, and the second voltage is obtained the body end bias voltage Vbb that module obtains for determining
Maximum value as the body in the saturation region transfer curve test under the inclined Vbb of the body and the voltage Vbs between source.
As an alternative embodiment, the curve test unit includes:
First test module, the voltage for being determined according to the voltage acquisition unit carry out not androgynous linear zone on the lower side
Transfer curve test, obtains test data；
Second test module, the voltage for being determined according to the voltage acquisition unit carry out not androgynous saturation region on the lower side
Transfer curve test, obtains test data；
Third test module, the voltage for being determined according to the voltage acquisition unit carry out the different grid voltages that body is 0 partially
Under curve of output test, obtain test data；
4th test module, the voltage for being determined according to the voltage acquisition unit carry out the different grid that body is Vbb partially
The curve of output of pressure is tested, and test data is obtained.
As an alternative embodiment, the second voltage obtains module, comprising:
Computing module, for by the first voltage obtain module obtain leakage body junction breakdown voltage Vdb with it is described
The difference (Vdb-Vdd) of the supply voltage Vdd of MOSFET element is divided into n equal portions, and every part is d；
Body end bias voltage determining module, for calculating curve test of acquisition (n-1) the * d as the MOSFET element
Body end bias voltage Vbb；
Wherein, n is natural number.
As seen from the above-described embodiment, the beneficial effect comprise that: the embodiment of the invention provides be used for MOSFET
The test method of model parameter extraction obtains breakdown voltage Vdb by the leakage body junction characteristic of test MOS device, determines
Vbb, value are less than Vdb-Vdd；The determination of Vbb ensure that device property is unaffected, ensure that the accuracy of test data.Really
Fixed the 1) Vbs maximum value is Vdd in item test；The integrality that ensure that voltage tester scope is conducive to mentioning for bulk effect parameter
It takes.Determining the, 2) Vbs maximum value is Vbb in item test.The voltage thereby determined that carries out 1) 2) 3) 4) test of item, solves existing
There is presence in technology that can not take into account the skill that not only can be extracted comprehensively body bias effect parameter but also not influence device Parameter Extraction result
Art problem, it is ensured that MOS device test result correctly takes into account bulk effect parameter extraction again.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (7)
1. the method for being used for MOSFET element model parameter extraction characterized by comprising
Leakage body junction breakdown voltage based on the MOSFET element uses different body ends in not androgynous curve test on the lower side
It biases, includes:
Module is obtained using first voltage, carries out leakage body junction breakdown test, obtains the leakage body junction breakdown electricity of the MOSFET element
Press Vdb；
Module is obtained using second voltage, determines that one is less than the leakage body junction breakdown voltage Vdb and MOSFET element electricity
The voltage of the difference of source voltage Vdd, the body end bias voltage Vbb of the curve test as the MOSFET element；
Module is obtained using tertiary voltage, is partially the line under the body end bias voltage Vbb using the supply voltage Vdd as body
Property area's transfer curve test in body and source between voltage Vbs maximum value；
Module is obtained using the 4th voltage, the second voltage is obtained into the body end bias voltage Vbb of module acquisition as the body
Hold the maximum value of the body in the saturation region transfer curve test under bias voltage Vbb and the voltage Vbs between source.
2. the method as described in claim 1, which is characterized in that according to the method as described in claim 1 determine voltage into
The following test of row:
Not androgynous linear zone transfer curve test on the lower side, obtains test data；
Not androgynous transfer curve test in saturation region on the lower side, obtains test data；
Body is the curve of output test under 0 different grid voltages partially, obtains test data；
Body is the curve of output test under the different grid voltages of Vbb partially, obtains test data.
3. the method as described in claim 1, which is characterized in that the determination one is less than the leakage body junction breakdown voltage Vdb
With the voltage of the difference of the MOSFET element supply voltage Vdd, the body end of the curve test as the MOSFET element is inclined
Set voltage Vbb, comprising:
The difference (Vdb-Vdd) of the leakage body junction breakdown voltage and the supply voltage of the MOSFET element is divided into n equal portions, often
Part is d；
Body end bias voltage Vbb by (n-1) * d as the curve test of the MOSFET element；
Wherein, n is natural number.
4. method according to claim 2, which is characterized in that further include being obtained according to method according to claim 2
Test data carries out the MOSFET element model parameter extraction.
5. being used for the device of MOSFET element model parameter extraction characterized by comprising
Voltage acquisition unit, for obtaining the voltage used in not androgynous curve test on the lower side；
Curve test unit, the voltage for being determined according to the voltage acquisition unit carry out not androgynous curve test on the lower side,
Obtain test data；
Parameter extraction unit, the test data for being obtained according to the curve test unit carry out the MOSFET element model
Parameter extraction；
The voltage acquisition unit, comprising:
First voltage obtains module, for obtaining the leakage body junction breakdown voltage Vdb of the MOSFET element；
Second voltage obtains module, for determining the leakage body junction breakdown voltage for being less than the first voltage and obtaining module acquisition
The voltage of the difference of Vdb and device power source voltage Vdd, the body end bias voltage of the curve test as the MOSFET element
Vbb；
Tertiary voltage obtains module, for being partially that the second voltage obtains module acquisition using the supply voltage Vdd as body
Body end bias voltage Vbb under linear zone transfer curve test in body and source between voltage Vbs maximum value；
4th voltage obtains module, for the second voltage to be obtained to the body end bias voltage Vbb of module acquisition as the body
Hold the maximum value of the body in the saturation region transfer curve test under bias voltage Vbb and the voltage Vbs between source.
6. device as claimed in claim 5, which is characterized in that the curve test unit includes:
First test module, the voltage for being determined according to the voltage acquisition unit carry out not androgynous linear zone on the lower side and shift
Curve test obtains test data；
Second test module, the voltage for being determined according to the voltage acquisition unit carry out not androgynous saturation region on the lower side and shift
Curve test obtains test data；
Third test module, the voltage for being determined according to the voltage acquisition unit carry out under the different grid voltages that body is 0 partially
Curve of output test, obtains test data；
4th test module, the voltage for being determined according to the voltage acquisition unit carry out under the different grid voltages that body is Vbb partially
Curve of output test, obtain test data.
7. device as claimed in claim 5, which is characterized in that the second voltage obtains module, comprising:
Computing module, for the first voltage to be obtained the leakage body junction breakdown voltage Vdb and the MOSFET device that module obtains
The difference (Vdb-Vdd) of the supply voltage Vdd of part is divided into n equal portions, and every part is d；
Body end bias voltage determining module, for calculating body of acquisition (n-1) the * d as the curve test of the MOSFET element
Hold bias voltage Vbb；
Wherein, n is natural number.
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| 0.8μm SOI/CMOS SPICE器件模型参数提取;顾爱军;《中国优秀硕士学位论文全文数据库信息科技辑》;20090515(第05期);第I135-159-30-33页 * |
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