CN107221532B - A kind of transparent flexible oxide ferroelectric memory - Google Patents
A kind of transparent flexible oxide ferroelectric memory Download PDFInfo
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- CN107221532B CN107221532B CN201710333577.8A CN201710333577A CN107221532B CN 107221532 B CN107221532 B CN 107221532B CN 201710333577 A CN201710333577 A CN 201710333577A CN 107221532 B CN107221532 B CN 107221532B
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- 230000015654 memory Effects 0.000 title claims abstract description 108
- 239000010408 film Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000010445 mica Substances 0.000 claims abstract description 47
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 47
- 239000010409 thin film Substances 0.000 claims abstract description 28
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 40
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 229910052593 corundum Inorganic materials 0.000 claims description 11
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 11
- 238000009738 saturating Methods 0.000 claims 1
- 230000010287 polarization Effects 0.000 abstract description 93
- 229920006395 saturated elastomer Polymers 0.000 abstract description 44
- 238000002834 transmittance Methods 0.000 abstract description 25
- 238000005452 bending Methods 0.000 abstract description 16
- 238000000137 annealing Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000008859 change Effects 0.000 abstract description 3
- 230000005621 ferroelectricity Effects 0.000 abstract description 3
- 239000002346 layers by function Substances 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 description 72
- 238000005259 measurement Methods 0.000 description 19
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000004872 soft tissue Anatomy 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
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Abstract
The invention discloses a kind of transparent flexible oxide ferroelectric memories.The transparent flexible ferroelectric memory is made of sequentially connected mica substrate, doping ZnO transparent electrodes, oxide ferroelectric film and ito transparent electrode.The ferroelectric memory of the present invention, using layered perovskite ferroelectric thin film as ferroelectricity functional layer；Its translucency is good, and wavelength is more than the light transmittance of the visible light of 400nm 80% or more；And it is flexible resistant to bending, when bending radius is 1.4mm, numerical value when saturated polarization and remanent polarization are close to formation state；High temperature resistance is excellent, and after 450 DEG C of annealing, saturated polarization and remanent polarization are with a wide range of applications without significant change in transparent flexible ferroelectric memory.
Description
Technical field
The invention belongs to Nonvolatile ferroelectric memory fields, and in particular to a kind of transparent flexible oxide ferroelectric storage
Device.
Background technology
With the continuous diminution of size of electronic devices, integrated level is continuously improved, and traditional flash memory cannot increasingly meet
Then there are some novel memories, such as ferroelectric memory, resistance-variable storing device, magnetic memory and phase transformation in the demand of people
Memory etc..Ferroelectric memory due to non-volatile, low-power consumption, high read-write number, high access speed, high density storage,
Radioresistance, with integrated circuit (IC) process compatible outstanding advantages of, and be acknowledged as next-generation most potential memory it
One.
In recent years, flexible device and wearable electronic product are gradually favored by market, thus, more and more people throw
Body is in the research of flexible wearable microdevice, such as University of Illinois of U.S. Canan Dagdeviren, John A.Rogers
Et al. document：Conformal piezoelectric systems for clinical andexperimental
characterization of soft tissue biomechanics[J].Nature materials,2015,14(7):
728-736, it was recently reported that 20nm-Ti/300nm-Pt/500nm-Pb (Zr, Ti) O is first prepared in rigid substrate3/10nm-Cr/
200nm-Au, then ferroelectric film is stripped out from rigid substrate, it encapsulates, obtains finally by polyimides PI (Polyimide)
The piezoelectric transducer of flexible.
Currently, flexible, spontaneous polarization strength is high, polarization due to having by organic ferroelectric thin film such as PVDF and P (VDF-TrFE)
The advantages that stability is strong, polarization flip-flop transition is short is preparing all-transparent or flexible ferroelectric memory field has received widespread attention,
But it is combined with substrate, and poor, reading speed is slow, easy polarization fatigue and non-refractory, these disadvantages seriously limit it transparent
Application in flexible ferroelectric memory.
Therefore, organic ferroelectric thin film transparent flexible feature resistant to bending should be taken into account, meets that reading speed is fast, resistance to height again
The features such as warm is current transparent flexibility ferroelectric memory urgent problem.
Invention content
In view of current flexible electronic device above shortcomings, the object of the present invention is to provide a kind of oxidations of transparent flexible
Object ferroelectric memory, the memory have light transmittance using layered perovskite ferroelectric thin film as ferroelectricity functional layer
The advantages that good, flexible resistant to bending, high temperature resistant, the requirement for the transparent flexible ferroelectric memory that is content with very little.
In order to solve the above technical problems, technical solution proposed by the present invention is：
A kind of transparent flexible oxide ferroelectric memory, by sequentially connected mica substrate, doping ZnO transparent electrodes, oxygen
Compound ferroelectric thin film and ito transparent electrode composition.
Preferably, mica substrate is the Fluororystal mica (AlF of 0.1 μm~10 μ m-thicks2O10Si33Mg)。
Preferably, doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film and 5wt%Ga of doping2O5The ZnO of doping is thin
One kind in film.
Preferably, oxide ferroelectric film is Bi3.25La0.75Ti3O12、Bi3.15Nd0.85Ti3O12Or SrBi2Ta2O9Three kinds
One kind in film.
Preferably, ito transparent electrode is mass ratio In2O3:SnO2=9:1 ito thin film.
Compared with prior art, it is an advantage of the invention that：
(1) ferroelectric memory prepared by the present invention is using layered perovskite ferroelectric thin film as ferroelectricity functional layer.
(2) the ferroelectric memory light transmittance that prepared by the present invention is good, and wavelength is more than that the light transmittance of the visible light of 400nm exists
80% or more.
(3) the ferroelectric memory flexibility for preparing of the present invention is resistant to bending, when bending radius is 1.4mm, saturated polarization and
Numerical value when remanent polarization is close to formation state.
(4) the ferroelectric memory high temperature resistance for preparing of the present invention is excellent, after 450 DEG C of annealing, saturated polarization and
Remanent polarization is without significant change.
(5) present invention effectively overcome organic ferroelectric thin film combined with substrate poor, polarization fatigue, reading speed slowly and
The shortcomings of non-refractory, is conducive to its practical application in transparent flexible field.
Description of the drawings
Fig. 1 is the front and back schematic diagram of the ferroelectric memory bending of the present invention；Wherein, it is (b) curved before (a) is bending
After song (r=1.4mm).
Fig. 2 is saturated polarization (P of the embodiment 1 to 18 under smooth and flexuosity (r=1.4mm)S) distribution map.
Fig. 3 is remanent polarization (Pr) distribution map of embodiment 1 to 18 under smooth and flexuosity (r=1.4mm).
Fig. 4 is embodiment 1 to 18 through the front and back saturated polarization (P of 450 DEG C of annealingS) distribution map.
Fig. 5 is embodiment 1 to 18 through the front and back remanent polarization (P of 450 DEG C of annealingr) distribution map.
In Fig. 1,1-mica substrate；2-doping ZnO transparent electrodes；3-oxide ferroelectric films；4-transparents electricity
Pole.
Specific implementation mode
It is only below presently preferred embodiments of the present invention, the scope of the present invention cannot be limited with this.I.e. it is every according to the present invention
The modification that claim is done belongs to the range that patent of the present invention covers.
The present invention is described further with reference to the accompanying drawings and examples.
Flexible and transparent oxide ferroelectric memory of the present invention, such as Fig. 1, by sequentially connected mica substrate 1, doping
ZnO transparent electrodes 2, oxide ferroelectric film 3 and ito transparent electrode 4 form, and specific preparation process is：First with mechanical stripping
Method obtains the mica substrate 1 of 0.1 μm~10 μ m-thicks, then prepares doping ZnO transparent electrodes 2, oxidation using pulse laser deposition
Object ferroelectric thin film 3 and ito transparent electrode 4.The preparation condition of doping ZnO transparent electrodes 2 is：Deposition temperature range be 600 DEG C extremely
750 DEG C, oxygen presses 1Pa；The preparation condition of oxide ferroelectric film 3 is：Deposition temperature range is 500 DEG C to 700 DEG C, oxygen pressure
3Pa；The preparation condition of ito transparent electrode 4 is：Deposition temperature range is room temperature to 350 DEG C, and oxygen presses 1Pa.Finally prepare
2 thickness range of ZnO transparent electrodes is adulterated in 50nm to 150nm, 3 thickness range of oxide ferroelectric film in 100nm to 300nm,
4 thickness range of ito transparent electrode is in 50nm to 150nm.
Embodiment 1
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 0.1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film of doping, oxide ferroelectric film are
Bi3.25La0.75Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 2
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 0.1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 5wt%Ga2O5The ZnO film of doping, oxide ferroelectric film are
Bi3.25La0.75Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 3
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film of doping, oxide ferroelectric film are
Bi3.25La0.75Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 4
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 5wt%Ga2O5The ZnO film of doping, oxide ferroelectric film are
Bi3.25La0.75Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 5
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 10 μ m-thicks
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film of doping, oxide ferroelectric film are
Bi3.25La0.75Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 6
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 10 μ m-thicks
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 5wt%Ga2O5The ZnO film of doping, oxide ferroelectric film are
Bi3.25La0.75Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 7
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 0.1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film of doping, oxide ferroelectric film are
Bi3.15Nd0.85Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 8
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 0.1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 5wt%Ga2O5The ZnO film of doping, oxide ferroelectric film are
Bi3.15Nd0.85Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 9
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film of doping, oxide ferroelectric film are
Bi3.15Nd0.85Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 10
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 5wt%Ga2O5The ZnO film of doping, oxide ferroelectric film are
Bi3.15Nd0.85Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 11
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 10 μ m-thicks
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film of doping, oxide ferroelectric film are
Bi3.15Nd0.85Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 12
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 10 μ m-thicks
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 5wt%Ga2O5The ZnO film of doping, oxide ferroelectric film are
Bi3.15Nd0.85Ti3O12Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The ferroelectric memory
Light transmittance measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively smooth
It is as shown in Figure 2 with the saturated polarization (Ps) under flexuosity (r=1.4mm).When frequency is 1KHz, electric field 400kV/cm
When, the remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for the ferroelectric memory.When
When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back saturated polarization (Ps) at 450 DEG C as schemed
Shown in 4.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 13
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 0.1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film of doping, oxide ferroelectric film are
SrBi2Ta2O9Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The light transmittance of the ferroelectric memory
Measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively in smooth and bending
Saturated polarization (Ps) under state (r=1.4mm) is as shown in Figure 2.It, should when frequency is 1KHz, electric field is 400kV/cm
The remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for ferroelectric memory.Work as frequency
When for 1KHz, electric field being 400kV/cm, which anneals front and back saturated polarization (Ps) such as Fig. 4 institutes at 450 DEG C
Show.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 14
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 0.1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 5wt%Ga2O5The ZnO film of doping, oxide ferroelectric film are
SrBi2Ta2O9Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The light transmittance of the ferroelectric memory
Measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively in smooth and bending
Saturated polarization (Ps) under state (r=1.4mm) is as shown in Figure 2.It, should when frequency is 1KHz, electric field is 400kV/cm
The remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for ferroelectric memory.Work as frequency
When for 1KHz, electric field being 400kV/cm, which anneals front and back saturated polarization (Ps) such as Fig. 4 institutes at 450 DEG C
Show.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 15
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film of doping, oxide ferroelectric film are
SrBi2Ta2O9Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The light transmittance of the ferroelectric memory
Measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively in smooth and bending
Saturated polarization (Ps) under state (r=1.4mm) is as shown in Figure 2.It, should when frequency is 1KHz, electric field is 400kV/cm
The remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for ferroelectric memory.Work as frequency
When for 1KHz, electric field being 400kV/cm, which anneals front and back saturated polarization (Ps) such as Fig. 4 institutes at 450 DEG C
Show.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 16
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 1 μ m-thick
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 5wt%Ga2O5The ZnO film of doping, oxide ferroelectric film are
SrBi2Ta2O9Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The light transmittance of the ferroelectric memory
Measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively in smooth and bending
Saturated polarization (Ps) under state (r=1.4mm) is as shown in Figure 2.It, should when frequency is 1KHz, electric field is 400kV/cm
The remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for ferroelectric memory.Work as frequency
When for 1KHz, electric field being 400kV/cm, which anneals front and back saturated polarization (Ps) such as Fig. 4 institutes at 450 DEG C
Show.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 17
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 10 μ m-thicks
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 2wt%Al2O3The ZnO film of doping, oxide ferroelectric film are
SrBi2Ta2O9Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The light transmittance of the ferroelectric memory
Measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively in smooth and bending
Saturated polarization (Ps) under state (r=1.4mm) is as shown in Figure 2.It, should when frequency is 1KHz, electric field is 400kV/cm
The remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for ferroelectric memory.Work as frequency
When for 1KHz, electric field being 400kV/cm, which anneals front and back saturated polarization (Ps) such as Fig. 4 institutes at 450 DEG C
Show.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Embodiment 18
A kind of transparent flexible oxide ferroelectric memory of the present invention is transparent by sequentially connected mica substrate, doping ZnO
Electrode, oxide ferroelectric film and ito transparent electrode composition.Preferably, substrate is the Fluororystal mica of 10 μ m-thicks
(AlF2O10Si33Mg), doping ZnO transparent electrodes are 5wt%Ga2O5The ZnO film of doping, oxide ferroelectric film are
SrBi2Ta2O9Film, ito transparent electrode are mass ratio In2O3:SnO2=9:1 ito thin film.The light transmittance of the ferroelectric memory
Measurement result is as shown in table 2.When frequency is 1KHz, electric field is 400kV/cm, the ferroelectric memory is respectively in smooth and bending
Saturated polarization (Ps) under state (r=1.4mm) is as shown in Figure 2.It, should when frequency is 1KHz, electric field is 400kV/cm
The remanent polarization (Pr) under smooth and flexuosity (r=1.4mm) is as shown in Figure 3 respectively for ferroelectric memory.Work as frequency
When for 1KHz, electric field being 400kV/cm, which anneals front and back saturated polarization (Ps) such as Fig. 4 institutes at 450 DEG C
Show.When frequency is 1KHz, electric field is 400kV/cm, which anneals front and back remanent polarization at 450 DEG C
(Pr) as shown in Figure 5.
Table 1 is 1 to 18 parameter selection menu of embodiment.
Table 2 is the light transmittance measurement result of the ferroelectric memory of embodiment 1 to 18.
Table 1
Table 2
Above-described embodiment the result shows that, ferroelectric memory of the invention, by sequentially connected mica substrate, doping ZnO
Transparent electrode, oxide ferroelectric film and ito transparent electrode composition.There is the ferroelectric memory of the present invention known to table 2 super in wavelength
The light transmittance of the visible light of 400nm is crossed 80% or more.There is the ferroelectric memory of the present invention known to Fig. 2 and Fig. 3 in bending radius r
When=1.4mm, saturated polarization and remanent polarization are close to the numerical value in formation state.There are Fig. 4 and Fig. 5 can
Know, ferroelectric memory of the invention is after 450 DEG C of annealing, and saturated polarization and remanent polarization are without significant change.It is comprehensive
On, ferroelectric memory of the invention has that light transmittance is good, flexible feature resistant to bending and heat safe, is expected in transparent flexible electronics
It is used widely in device.
Claims (3)
1. a kind of transparent flexible oxide ferroelectric memory, which is characterized in that saturating by sequentially connected mica substrate, doping ZnO
Prescribed electrode, oxide ferroelectric film and ito transparent electrode composition, mica substrate are the Fluororystal mica of 0.1 μm ~ 10 μ m-thicks；Doping
ZnO transparent electrodes are 2wt%Al2O3The ZnO film or doping ZnO transparent electrodes of doping are 5wt%Ga2O5The ZnO film of doping.
2. ferroelectric memory as described in claim 1, which is characterized in that oxide ferroelectric film is Bi3.25La0.75Ti3O12、
Bi3.15Nd0.85Ti3O12And SrBi2Ta2O9One kind in three kinds of films.
3. ferroelectric memory as described in claim 1, which is characterized in that ito transparent electrode is mass ratio In2O3:SnO2=9:1
Ito thin film.
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