CN107134489A - New field cut-off anode in short circuit type insulated gate bipolar transistor - Google Patents
New field cut-off anode in short circuit type insulated gate bipolar transistor Download PDFInfo
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- CN107134489A CN107134489A CN201710421615.5A CN201710421615A CN107134489A CN 107134489 A CN107134489 A CN 107134489A CN 201710421615 A CN201710421615 A CN 201710421615A CN 107134489 A CN107134489 A CN 107134489A
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- anode
- short circuit
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- 238000009413 insulation Methods 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000001259 photo etching Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
End anode in short circuit type insulated gate bipolar transistor the present invention relates to a kind of new field, including n types drift region, n+ type field stop layers are provided with below n types drift region, collector area is provided with below n+ type field stop layers, collector area includes being provided with the colelctor electrode being connected with collector area below spaced n+ types collector area and p+ types collector area, collector area；N types are arranged at intervals with base region and grid above drift region, base region includes the first base region P++ and the second base region P below the first base region P++ positioned at base region top, the left and right sides on base region surface is provided with n+ types launch site, provided with the emitter stage being connected with n+ types launch site above n+ types launch site and base region, the new field cut-off anode in short circuit type insulated gate bipolar transistor manufacturing cost that the gate insulation layer present invention is provided with the lateral surface of grid is low.
Description
Technical field
The present invention relates to a kind of manufacture method of power tube, more particularly to a kind of new field cut-off anode in short circuit type insulation
Grid bipolar transistor.
Background technology
The compound full-control type voltage that IGBT is made up of BJT (double pole triode) and MOS (insulating gate type field effect tube)
Drive-type power semiconductor, has advantage of both MOSFET high input impedance and GTR low conduction voltage drop concurrently.GTR
Saturation pressure is reduced, and current carrying density is big, but driving current is larger；MOSFET driving power very littles, switching speed is fast, but conduction voltage drop
Greatly, current carrying density is small.IGBT combines the advantage of both the above device, and driving power is small and saturation pressure is reduced.Being especially suitable for should
For DC voltage be 600V and the converter system of the above such as alternating current generator, frequency converter, Switching Power Supply, lighting circuit, traction are passed
The field such as dynamic.Igbt transistor can substantially be divided into PT-IGBT (punch IGBT), NPT-IGBT (non-punch through IGBT) and
FS-IGBT (electric field prevention type IGBT).
With power electronic and the rapid advances of semiconductor technology, all kinds of applied power electronics all start requirement with it is special,
The semiconductor switch device of specialty, with the win-win of cost of implementation and performance.Although Trench FS structure Is GBT are compared with NPT, PT structure
For, it is bigger pressure-resistant with being born on thinner thickness, accomplish on identical area bigger electric current, preferably switch it is special
The advantages of property, but reverse parallel connection fly-wheel diode again is generally required in actual applications, add manufacturing cost.
In view of above-mentioned defect, the design people is actively subject to research and innovation, to found a kind of the new of new structure
Field cut-off anode in short circuit type insulated gate bipolar transistor.
The content of the invention
In order to solve the above technical problems, ending anode it is an object of the invention to provide a kind of low new field of manufacturing cost
Short circuit type insulated gate bipolar transistor.
The new field cut-off anode in short circuit type insulated gate bipolar transistor of the present invention, including n-type drift region, it is described
It is provided with below n-type drift region below n+ type field stop layers, the n+ types field stop layer and is provided with collector area, it is described
Collector area includes being provided with and collecting below spaced n+ types collector area and p+ types collector area, the collector area
The colelctor electrode of electrode district connection；
Base region and grid are arranged at intervals with above the n-type drift region, the base region includes being located on base region
The first base region P++ in portion and the second base region P- below the first base region P++, the left side on the base region surface
Right both sides are provided with above n+ types launch site, the n+ types launch site and base region provided with the transmitting being connected with the n+ types launch site
Gate insulation layer is provided with pole, the lateral surface of the grid.
By such scheme, the present invention at least has advantages below：The new field cut-off anode in short circuit type of the present invention is exhausted
Diode is embedded into IGBT by edge grid bipolar transistor in the way of MOSFET, field is ended anode in short circuit IGBT and is being used
In no longer need reverse parallel connection high-performance diode, saved manufacturing cost.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And can be practiced according to the content of specification, below with presently preferred embodiments of the present invention and coordinate accompanying drawing describe in detail as after.
Brief description of the drawings
Fig. 1 is the structural representation that anode in short circuit type insulated gate bipolar transistor is ended in the new field of the present invention；
Wherein, 1：N-type drift region；2：N+ type field stop layers；3：N+ types collector area；4：P+ types collector area；5：Current collection
Pole；6：Grid；7：First base region P++；8：Second base region P-；9：N+ types launch site；10：Emitter stage；11：Insulating barrier.
Embodiment
With reference to the accompanying drawings and examples, the embodiment to the present invention is described in further detail.Implement below
Example is used to illustrate the present invention, but is not limited to the scope of the present invention.
Referring to Fig. 1, a kind of new field cut-off anode in short circuit type insulated gate bipolar of a preferred embodiment of the present invention is brilliant
It is provided with below n+ types field stop layer 2, n+ type field stop layers and sets below body pipe, including n-type drift region 1, n-type drift region
Collector area is equipped with, collector area is included under spaced n+ types collector area 3 and p+ types collector area 4, collector area
Side is provided with the colelctor electrode 5 being connected with collector area；
It is arranged at intervals with base region and grid 6 above n-type drift region, base region includes the positioned at base region top
One base region P++7 and the second base region P-8 below the first base region P++, the left and right sides on base region surface is provided with n+
Provided with the emitter stage 10 being connected with n+ types launch site above type launch site 9, n+ types launch site and base region, on the lateral surface of grid
It is provided with gate insulation layer 11.
End anode in short circuit type insulated gate bipolar transistor by diode with MOSFET side in the new field of the present invention
Formula is embedded into IGBT, and field is ended anode in short circuit IGBT no longer needs reverse parallel connection high-performance diode in use, saves
Manufacturing cost.
The manufacture method of anode in short circuit type insulated gate bipolar transistor is ended in the new field of the present invention, and it includes：
The field oxidation of first step N- zone melting single-crystal pieces.
The making (including photoetching, quarter are adornd, injected, pushing away fire) of second step potential dividing ring
3rd step P-BODY making (including photoetching, quarter are adornd, injected, pushing away fire)
4th step Trench making (including TEOS deposits, TEOS photoetching, TEOS etchings, Trench etchings)
The making (including sacrifice oxidation, sacrifice the foster oxidation of oxide etch, grid, polycrystalline deposition) of 5th step grid
The making (including launch site photoetching, launch site injection, launch site annealing) of 6th step launch site
7th step contact hole making (including contact hole photoetching, contact hole etching, contact hole injection, contact hole annealing,
Metal deposition)
8th step thinning back side (120 ± 5um of thinning back side)
N+ layers of 9th step cut-off makes (including N+ layers of high energy ion implantation, annealing)
N+ layers of tenth step short circuit anode makes (including short-circuit anode photoetching, N+ injections)
11st electrode P+ layers of step pole makes (including pole electrode P+ injections, annealing)
12nd step back face metalization (including back face metalization pre-treatment, back side multiple layer metal make)
Below table be 1200V/25A it is new field cut-off anode in short circuit type insulated gate bipolar transistor manufacturing process and
Parameter：
It the above is only the preferred embodiment of the present invention, be not intended to limit the invention, it is noted that led for this technology
For the those of ordinary skill in domain, without departing from the technical principles of the invention, some improvement and modification can also be made,
These improvement and modification also should be regarded as protection scope of the present invention.
Claims (1)
1. a kind of new field cut-off anode in short circuit type insulated gate bipolar transistor, it is characterised in that：Including n-type drift region,
It is provided with below the n-type drift region below n+ type field stop layers, the n+ types field stop layer and is provided with collector area,
The collector area includes being provided with below spaced n+ types collector area and p+ types collector area, the collector area
The colelctor electrode being connected with collector area；
Base region and grid are arranged at intervals with above the n-type drift region, the base region is included positioned at base region top
First base region P++ and the second base region P- below the first base region P++, the left and right two on the base region surface
Side is provided with above n+ types launch site, the n+ types launch site and base region provided with the emitter stage being connected with the n+ types launch site,
Gate insulation layer is provided with the lateral surface of the grid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710421615.5A CN107134489A (en) | 2017-06-07 | 2017-06-07 | New field cut-off anode in short circuit type insulated gate bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710421615.5A CN107134489A (en) | 2017-06-07 | 2017-06-07 | New field cut-off anode in short circuit type insulated gate bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107134489A true CN107134489A (en) | 2017-09-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710421615.5A Pending CN107134489A (en) | 2017-06-07 | 2017-06-07 | New field cut-off anode in short circuit type insulated gate bipolar transistor |
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| CN (1) | CN107134489A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020063918A1 (en) * | 2018-09-29 | 2020-04-02 | 苏州东微半导体有限公司 | Semiconductor power device |
| CN114114857A (en) * | 2022-01-25 | 2022-03-01 | 威海银创微电子技术有限公司 | Solution method, device and medium for overlay deviation effect in planar VDMOS |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489776A (en) * | 2013-09-18 | 2014-01-01 | 中国东方电气集团有限公司 | Method for achieving process of field-stop type insulated gate bipolar transistor |
-
2017
- 2017-06-07 CN CN201710421615.5A patent/CN107134489A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489776A (en) * | 2013-09-18 | 2014-01-01 | 中国东方电气集团有限公司 | Method for achieving process of field-stop type insulated gate bipolar transistor |
Non-Patent Citations (1)
| Title |
|---|
| JAE-EUL YEON*, MIN-YOUNG PARK*, KYU-MIN CHO**, HEE-JUN KIM***: "Field Stop Shorted Anode Trench IGBT for Induction", 《IECON 2012 - 38TH ANNUAL CONFERENCE ON IEEE INDUSTRIAL ELECTRONICS SOCIETY》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020063918A1 (en) * | 2018-09-29 | 2020-04-02 | 苏州东微半导体有限公司 | Semiconductor power device |
| CN114114857A (en) * | 2022-01-25 | 2022-03-01 | 威海银创微电子技术有限公司 | Solution method, device and medium for overlay deviation effect in planar VDMOS |
| CN114114857B (en) * | 2022-01-25 | 2022-05-10 | 威海银创微电子技术有限公司 | Solution method, device and medium for overlay deviation effect in planar VDMOS (vertical double-diffused metal oxide semiconductor) |
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| CB02 | Change of applicant information |
Address after: 222300 No. 88 Shuofang Zhongtong East Road, Xinwu District, Wuxi City, Jiangsu Province Applicant after: Jiangsu Donghai Semiconductor Technology Co., Ltd. Address before: 214000 No. 88 Shuofang Zhongtong East Road, Wuxi New District, Jiangsu Province Applicant before: Wuxi Roum Semiconductor Technology Co., Ltd. |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170905 |