CN107104520A - Photoelectric conversion system - Google Patents
Photoelectric conversion system Download PDFInfo
- Publication number
- CN107104520A CN107104520A CN201710083497.1A CN201710083497A CN107104520A CN 107104520 A CN107104520 A CN 107104520A CN 201710083497 A CN201710083497 A CN 201710083497A CN 107104520 A CN107104520 A CN 107104520A
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- Prior art keywords
- light
- photo
- electric
- conversion element
- translating system
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- 239000011248 coating agent Substances 0.000 description 10
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- 230000005540 biological transmission Effects 0.000 description 8
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- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
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- 229910052790 beryllium Inorganic materials 0.000 description 2
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- 239000004020 conductor Substances 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
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- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 229910005580 NiCd Inorganic materials 0.000 description 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a photoelectric conversion system, which comprises a first device, a second device and a third device, wherein the first device comprises a light-emitting element, and the light-emitting element receives first electric energy to drive the light-emitting element to emit light; and a second device including a photoelectric conversion element for absorbing light and outputting a second electric energy, wherein the ratio of the second electric energy to the first electric energy is greater than 20%.
Description
Technical field
The present invention relates to a kind of structure design of photo-translating system.
Background technology
After after intelligent handheld device, it is one agitation that Wearable device is gradually luxuriant, and such as intelligent watch also occurs successively
Using the application of the raw doctor's signal of various continuitys measurement of Wearable device, therefore in limited Wearable device volume, such as
It is a problem that what, which provides easily charging modes, and wireless charging is one of which solution.
The content of the invention
The present invention provides a kind of photo-translating system, comprising a first device, and wherein first device includes a light-emitting component,
Light-emitting component receives one first electric energy to drive light-emitting component to send a light；And one second device include a photoelectric conversion element
Part is to absorb light and to export one second electric energy, wherein the ratio of the second electric energy and the first electric energy is more than 20%.
Brief description of the drawings
Fig. 1 is the photo-translating system schematic diagram of one embodiment of the invention；
Fig. 2 is the diagrammatic cross-section of Fig. 1 first device；
Fig. 3 is the floor map of the first device of another embodiment of the present invention；
Fig. 4 A are the top view of the light-emitting diode chip for backlight unit of first device；
Fig. 4 B are the sectional view of the light-emitting diode chip for backlight unit of first device；
Fig. 5 is the floor map of the second device of another embodiment of the present invention；
Fig. 6 A are the partial sectional view of the photo-translating system of one embodiment of the invention；
Fig. 6 B are the structural representation of the photo-electric conversion element of one embodiment of the invention；
Fig. 6 C for one embodiment of the invention second device in photo-electric conversion element and substrate top view；
Fig. 7 A~Fig. 7 C are the floor map of the second device of other embodiments of the invention.
Symbol description
1 light-emitting component
The light output surface of 10 electrically-conductive backing plate 11
111st, the routing electrode of 112 border 12
12b Longitudinal extending electrodes 12a extends laterally electrode
The metal contact layer of 122 catoptric arrangement 1220
The metal bonding coating of 1222 metal barrier layer 1224
The transparent conducting structures of 1226 metallic reflector 123
The conductive oxide layer of 1230 first conductive oxide layer 1,232 second
14 insulating barriers 142 are open
The 15 luminous clads of lamination 151 first
The clad of 152 active layers 153 second
The conductive adhesion layer of 16 electric contacting layer 17
The first electrode of 18 second electrode 181
19 window layers
2 photo-electric conversion elements
2' photo-electric conversion element 2S surface
The semiconductor epitaxial lamination of 21 electrically-conductive backing plate 22
The basalis of 221 back surface field 222
The window layers of 223 emission layer 224
The second electrode of 225 p-n junction 23
The metal wire of the 3rd electrodes of 23e 2311
24 first electrode 24a routing electrodes
The electrodes of 24b gate-shaped electrodes 24e the 4th
3 light
4 transparent carrier plates
5 second devices
5S surfaces
51 second can the transmission port of charge and discharge electric device 52 second
The non-display area of 53 viewing area 54
The adhesion coating of 55 fixing device 56
The glue-line of 57 substrate 58 first
59 second glue-lines
6 first devices
The sides of 6S first
61 first can the transmission port of charge and discharge electric device 62 first
The phtographic lens of 63 flash lamp 64
65 openings
8 alignment devices
The recess of 81 protuberance 82
The electric energy of P1 first
The electric energy of P2 second
N normal directions
Embodiment
Following examples will be along with brief description of the drawings idea of the invention.
Fig. 1 shows the photo-translating system schematic diagram of first embodiment of the invention.Described photo-translating system includes one
The second device 5 of first device 6 and one；Wherein, first device 6 can discharge and recharge comprising a light-emitting component 1, one first
(chargeable/dischargeable) transmission port 62 of element 61 and 1 first, light-emitting component 1 and first can discharge and recharge
Element 61 electrically connect with receive first can the one first electric energy P1 that provides light-emitting component 1 of charge and discharge electric device 61, make light-emitting component 1
Send a light 3；First transmission port 62 with first can charge and discharge electric device 61 electrically connect, can be used to be external to a power supply to first
Can charge and discharge electric device 61 charged；Second device 5 comprising a photo-electric conversion element 2 and one second can charge and discharge electric device 51,
Wherein, photo-electric conversion element 2 with second can charge and discharge electric device 51 electrically connect, photo-electric conversion element 2 absorbs light-emitting component 1 and sent
After light 3 export one second electric energy P2 to this second can charge and discharge electric device 51 charge.Except the element disclosed in the embodiment of the present invention,
First device 6 can also include other existing electronic components with second device 5 according to the demand of device, for example：Control element, driving
Element, data storage elements, conversion element etc. are to provide corresponding function, and the emphasis of this and non-invention is not repeated herein.
Second device 5 it is also alternative comprising one second transmission port 52 with second can charge and discharge electric device 51 electrically connect, can be used to external
To a power supply with provide another charge path to second can charge and discharge electric device 51 charge.Wherein, first can charge and discharge electric device
61 and second can charge and discharge electric device 51 include rechargeable battery (Rechargeable battery), for example NI-G (NiCd) electricity
Pond, ni-mh (NiMH) battery, lithium ion (Li-ion) battery or lighium polymer (Li-Polymer) battery, the first transmission port 62
USB (Universal serial bus, USB), such as Micro USB, Mini are included with the second transmission port 52
USB or USB Type-C.
In the present embodiment, Fig. 2 shows the first device 6 of first embodiment of the invention, and the first side of first device 6 has
One opening 65 is located at an end of first device 6 to facilitate external power supply to place light-emitting component 1, the first transmission port 62.
As that shown in fig. 3, in one embodiment, first device 6 can be hand-hold device, such as intelligent mobile phone (Smart phone),
With a phtographic lens 64 to capture of photographing, a flash lamp 63 to send a white light to compensate environment light source and luminous member
Part 1 emits beam 3, and wherein phtographic lens 64, flash lamp 63 and light-emitting component 1 are located at the first side 6S of first device 6, thus
The photo-electric conversion element 2 of smart watch is charged by the light-emitting component 1 of intelligent mobile phone.In the present embodiment, light
Element 1 includes a light emitting diode (Light-emitting diode, LED) chip, as shown in fig. 4 a and fig. 4b, light-emitting diodes
Die includes the active layers 152 with one first band gap to emit beam 3, and light 3 has a spike length (Peak
Wavelength) it is more than 720nm, and light-emitting component 1 has the power efficiency (Power efficiency) more than 50%, wherein
Power efficiency refers to that light-emitting component 1 produces the power of the energy work rate (W) and the first electric energy P1 of input light-emitting component 1 of light 3
(W) ratio；Referring again to shown in Fig. 4 A, there is a plurality of longitudinal direction being parallel to each other on the light output surface 11 of light-emitting diode chip for backlight unit
Extension electrode 12b, one extend laterally electrode 12a and are connected to form multiple plotted points with Longitudinal extending electrode 12b, and two routings
Electrode 12, which is located to extend laterally on electrode 12a and respectively provide, to be enough routing or is soldered to the routing area of external circuit, for example not
Less than 2500mil2；Extend laterally electrode 12a across and perpendicular to each Longitudinal extending electrode 12b central point, two are beaten
Line electrode 12 is spaced equal distance with border 111 and border 112 respectively.
Fig. 4 B show the sectional view of the light-emitting diode chip for backlight unit of the hatching C-C ' along light output surface 11 in Fig. 4 A.Such as Fig. 4 B
Shown, light-emitting diode chip for backlight unit has an electrically-conductive backing plate 10；One conductive adhesion layer 17, on electrically-conductive backing plate 10；One reflection
Structure 122, on conductive adhesion layer 17；One transparent conducting structures 123, on catoptric arrangement 122；One window layers
19, on transparent conducting structures 123；One insulating barrier 14, between transparent conducting structures 123 and window layers 19；One hair
Light lamination 15, on window layers 19；One electric contacting layer 16 is located on luminous lamination 15；First electrode 181 includes routing
Electrode 12 is located on luminous lamination 15 and electric contacting layer 16 with extension electrode 12a, 12b；And a second electrode 18, positioned at leading
With the formation low resistance contact of electrically-conductive backing plate 10 under electric substrate 10, the wherein resistance value of low resistance contact is less than 10-4 Ω-cm.Hair
Light lamination 15 has one first clad (cladding layer) 151, on window layers 19；Active layers 152 are located at the
On one clad 151；And one second clad (cladding layer) 153, positioned at active layers 152 and first electrode
Between 181.
First electrode 181 and second electrode 18, which induce current into luminous lamination 15 receiving external power source, makes active layers
152 emit beam 3, wherein, first electrode 181 and second electrode 18 include metal material, such as aluminium (Al), chromium (Cr), copper
(Cu), combination or the alloy of golden (Au), nickel (Ni), titanium (Ti), platinum (Pt), germanium (Ge), beryllium (Be) or above-mentioned material.Such as Fig. 4 B institutes
Show, extension electrode 12a coats the surface of electric contacting layer 16, increase and the area of the formation low resistance contact of electric contacting layer 16, wherein
The resistance value of low resistance contact is less than 10-4The part of Ω-cm, wherein extension electrode 12a cladding electric contacting layer 16 is higher than routing electricity
Pole 12.Electric contacting layer 16 is located between extension electrode 12a, 12b and luminous lamination 15, to make extension electrode 12a, 12b and hair
Low resistance contact is formed between light lamination 15, the wherein resistance value of low resistance contact is less than 10-4Ω-cm.Electric contacting layer 16 is with prolonging
Stretch the resistance value between the resistance value between electrode 12a, 12b and electric contacting layer 16 and luminous lamination 15 and be respectively smaller than routing electricity
Resistance value between pole 12 and luminous lamination 15.The material of electric contacting layer 16 includes III-V compound semiconductor material, its electricity
Property can be identical with the second clad 153 and be more than 10 with an impurity concentration19cm-3, in the present embodiment, electric contacting layer
16 material can be GaAs (GaAs).
The material of luminous lamination 15 can be III-V compound semiconductor material.In the present embodiment, the first clad 151
It is electrical different with the second clad 153, it is combined to provide electronics and hole respectively in active layers 152
(recombination) to launch light 3；First clad 151 is for example comprising p-type aluminum gallium arsenide (AlaGa1-aAs,0<a<1)、
Indium phosphide (InP) or aluminum indium arsenide (Al1-bInbAs,0<b<1), and the zinc that adulterates (Zn), carbon (C) or magnesium (Mg), wherein zinc (Zn),
The doping concentration of carbon (C) or magnesium (Mg) is between 5 × 1016cm-3To 1 × 1019cm-3Between, the thickness of the first clad 151 between
Between 0.1 μm and 10 μm, preferably between 0.1 μm and 2 μm；Second clad 153 is for example comprising n-type aluminum gallium arsenide
(AlaGa1-aAs,0<a<1), indium phosphide (InP) or aluminum indium arsenide (Al1-bInbAs,0<b<1), and doped silicon (Si) or tellurium (Te),
Wherein the doping concentration of silicon (Si) or tellurium (Te) is between 5 × 1016cm-3To 5 × 1018cm-3Between, the thickness of the second clad 153
Between 0.1 μm and 10 μm, preferably between 0.1 μm and 1 μm；Active layers 152 include multiple well layer (well
) and multiple barrier layers (barrier layers) are overlapping, well layer (well layers) material according to active layers 152 layers
Material, can determine luminous lamination 15 emit beam 3 spike it is long, well layer includes aluminium arsenide gallium indium ((AlxGa1-x)yIn1-yAs, 0≤x
≤ 1,0≤y≤1), barrier layer includes phosphorus aluminum gallium arsenide (AlxGa1-xAsyP1-y, 0≤x≤1,0≤y≤1), each well layer
Thickness is between 5nm to 100nm, and the thickness of each barrier layer is between 10nm to 100nm, and the band gap of barrier layer is more than
The band gap of well layer.One light output surface 11 of the second clad 153 can be roughened (roughened) surface to reduce total reflection for one,
Lift the luminous efficiency of light-emitting diode chip for backlight unit.Active layers 152 can send visible ray or black light, in the present embodiment actively
The light 3 that layer 152 is sent has black light of the spike length more than 720nm to avoid interference environment light source, active layers 152
Structure can be single heterojunction structure, double-heterostructure, bilateral double-heterostructure, multiple quantum trap structure or quantum-dot structure.Window
The electrical of layer 19 can be electrical identical with the first clad 151, extracts layer as light to lift the luminous of light-emitting diode chip for backlight unit
Efficiency.Window layers 19 are transparent for the issued light of active layers 152, and its material can be semi-conducting material, such as aluminum gallium arsenide
(AlaGa1-aAs,0<a<Or gallium phosphide (GaP) 1).Transparent conducting structures 123 are to increase window layers 151 and catoptric arrangement 122
Between electric current conduction and diffusion, and for the luminous issued light of lamination 15 to be transparent to form comprehensive anti-with catoptric arrangement 122
Penetrate mirror (Omni-Directional Reflector, ODR).The material of transparent conducting structures 123 includes transparent conductive oxide,
Including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin
(ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), indium oxide cerium (ICO), oxygen
Change the combination of indium tungsten (IWO), indium zinc oxide (IZO), indium gallium (IGO) or above-mentioned material.Transparent conducting structures 123 have one
First conductive oxide layer 1230, under insulating barrier 14, and one second conductive oxide layer 1232, positioned at luminous lamination 15 with
Between first conductive oxide layer 1230.Wherein, the first conductive oxide layer 1230 and the second conductive oxide layer 1232 are comprising different
Material.In another embodiment, the first conductive oxide layer 1230 is different from the second conductive oxide layer 1232 comprising a component
All constituent elements, such as material of the first conductive oxide layer 1230 are indium zinc oxide (IZO), the second conductive oxide layer 1232
Material is tin indium oxide (ITO).Second conductive oxide layer 1232 is directly contacted with insulating barrier 14 and window layers 19, and covering insulation
A 14 at least surface of layer.
Insulating barrier 14 is more than 90% for the penetrance for the issued light of lamination 15 that lights, and refractive index is less than 1.5, is preferably situated between
Between 1.3 and 1.5.The material of insulating barrier 14 can be non-oxide insulative material, for example, cyclic olefin polymer (COC), fluorine
Carbon polymer (Fluorocarbon Polymer), calcirm-fluoride, magnesium fluoride or its combination.In another embodiment, insulating barrier 24
Material can include halide, such as IIA-VII compounds of group, such as calcirm-fluoride or magnesium fluoride.The refractive index of insulating barrier 14 is less than
The refractive index of window layers 19 and the refractive index of transparent conducting structures 123 are to increase the luminous issued light line 3 of lamination 15 in window layers
Interface between 19 and insulating barrier 14 forms the probability of total reflection, thus the light extraction efficiency of lifting light-emitting diode chip for backlight unit.Insulation
Layer 14 can have patterned distribution, for example, be generally corresponding to be located at the underface of electric contacting layer 16 and/or routing electrode 12, to promote
The diffusion of electric current.Insulating barrier 14 is also comprising multiple openings 142, and wherein transparent conducting structures 123 are inserted in multiple openings 142, with
The formation low resistance contact of window layers 19, the wherein resistance value of low resistance contact is less than 10-4Ω-cm。
Catoptric arrangement 122 can the light that sends of Refl-Luminous lamination 15, its material can be metal material.Catoptric arrangement 122 is wrapped
Containing a metallic reflector 1226；One metal bonding coating 1224 is located under metallic reflector 1226；One metal barrier layer 1222, position
Under metal bonding coating 1224；And a metal contact layer 1220, under metal barrier layer 1222.Metallic reflector
1226 can reflect the light that carrys out self-luminous lamination 15 and with more than 90% reflectivity；Metal bonding coating 1224 is bonded to help
Metallic reflector 1226 and metal barrier layer 1222；Metal barrier layer 1222 can prevent the material of metallic reflector 1226 from diffusing to
Metal contact layer 1220, and then destroying the structure of metallic reflector 1226 causes the reflectivity of metallic reflector 1226 to reduce, gold
Belong to contact layer 1220 and the formation low resistance contact of underlying conductive tack coat 17, the wherein resistance value of low resistance contact is less than 10-4Ω-
cm.Conductive adhesion layer 17 connects electrically-conductive backing plate 10 and catoptric arrangement 122 by welding (solder bonding), wherein conductive viscous
The material for tying layer 17 includes metal material, such as tin (Sn), golden (Au), silver-colored (Ag), lead (Pb), titanium (Ti), nickel (Ni), platinum
(Pt), alloy of tungsten (W) or above-mentioned material etc..
The second device 5 of Fig. 5 display present invention, second device 5 includes a Wearable device (Wearable device),
Such as smart watch, can be fixed on human body by a fixing device 55, such as watchband.As shown in figure 5, second device 5 has
There are a surface 5S and a transparent carrier plate 4 to be covered on the 5S of surface, wherein transparent carrier plate 4 is more than for the transparency of light 3
90%, its material is for example comprising glass or sapphire.Surface 5S includes a viewing area 53 and a non-display area 54 adjoining display
Area 53, viewing area 53 can show word, static image, dynamic image or its combination, to provide information；Non-display area 54 is used to
The element around viewing area 53 is centered around inside covering or hiding second device 5, the non-display area 54 of the present embodiment is a cover plate,
And non-display area 54 surrounds viewing area 53, transparent carrier plate 4 covers the viewing area 53 and the non-display area 54.Second device 5
Photo-electric conversion element 2 is located between non-display area 54 and transparent carrier plate 4, and light 3 may pass through transparent carrier plate 4 and be photoelectrically converted element
2 absorb to be converted into electric energy.
Fig. 6 A are shown as the sectional view of the photo-translating system of one embodiment of the invention, are A-A ' the line sections along Fig. 5
It is seen in direction, and second device 5 also includes a substrate 57；Photo-electric conversion element 2 can be fixed on substrate 57 by an adhesion coating 56
And electrically connected with the circuit structure on substrate 57；One first glue-line 58 covers photo-electric conversion element 2 to completely cut off the water in air
Gas；And one second glue-line 59 be located between the first glue-line 58 and transparent carrier plate 4, be fixed on to engage photo-electric conversion element 2
On transparent carrier plate 4, wherein the material of the first glue-line 58 and the second glue-line 59 is all more than 90%, light 3 for the transparency of light 3
The surface 2S that transparent carrier plate 4, the second glue-line 59 and the first glue-line 58 reach photo-electric conversion element 2 can sequentially be penetrated, it is preferable that
In order to reduce light loss, the distance between surface 2S and the transparent carrier plate 4 of the photo-electric conversion element 2 are between 5 μm to 1000 μm
Between, it is preferable that the totalling thickness control of the first glue-line 58 and the second glue-line 59 between surface 2S and transparent carrier plate 4 is in 10 μm
To between 1000 μm.Preferably, the present embodiment is when operation, and the material of light-emitting component 1 and photo-electric conversion element 2 all includes III-
V compound semiconductor materials, and light-emitting component 1 is just to close to photo-electric conversion element 2, making after the self-emission device 1 of light 3 sends
The surface 2S that transparent carrier plate 4, the second glue-line 59 and the first glue-line 58 reach photo-electric conversion element 2 is directed through, thus it is luminous
Without any focusing arrangement light 3 is gathered in into photo-electric conversion element 2 between element 1 and photo-electric conversion element 2.In operation
When, the distance between first device 6 and second device 5 are less than 10mm to improve overall photoelectric transformation efficiency, preferably first
The distance between device 6 and second device 5, which are less than 3mm or be brought into close contact, makes do not have spacing.Substrate 57 is preferably a flexible base plate.
In another embodiment, photo-electric conversion element 2 can directly be adhered to transparent carrier plate 4 by the first glue-line 58, can be further by table
The distance between face 2S and transparent carrier plate 4 are reduced between 5 μm to 500 μm is imitated with reducing light loss and improving opto-electronic conversion
Rate.The material of first glue-line 58 and the second glue-line 59 includes organic material, such as unsaturated polyester resin (Unsaturated
Polyester resin), epoxy resin (Epoxy), oxetanes (Oxetane), nylon (Nylon), polypropylene (PP),
Polybutylene terephthalate (PBT) (PBT), polyphenylene oxide (PPO), makrolon (PC), acrylic nitrile-butadiene-styrene resin
(ABS resin), polyvinyl chloride (PVC), benzocyclobutene (BCB) and silica gel (Silicone).In the present embodiment, first
The material of glue-line 58 and the second glue-line 59 is different.The adhesion of photo-electric conversion element 2 is fixed on substrate 57 by adhesion coating 56, in this reality
Apply in example, adhesion coating 56 is conductive material in the present embodiment, the circuit structure of photo-electric conversion element 2 and substrate 57 is electrically connected
Connect, the material of adhesion coating 56 includes metal, metal alloy or conducting resinl.
In the present embodiment, photo-electric conversion element 2 includes a solar cell (Solar cell) chip, as shown in Figure 6B,
Photo-electric conversion element 2 is located on electrically-conductive backing plate 21 and with a surface comprising an electrically-conductive backing plate 21, semiconductor extension lamination 22
2S, a first electrode 24 are located on the 2S of surface, a second electrode 23 is located on electrically-conductive backing plate 21 relative to semiconductor epitaxial lamination
22 opposite side, partly leads extension body lamination 22 and includes a back surface field (Back Surface Field；BSF) layer 221 is located at and led
On electric substrate 21, a substrate (Base) layer 222 is located on back surface field layer 221, and transmitting (Emitter) layer 223 is located at substrate
On layer 222, and a window (Window) layer 224 is located on emission layer 223, and the material of wherein back surface field layer 221 includes arsenic
Change gallium aluminium (AluGa(1-u)As, 0<u<Or AlGaInP (Al 1)uInvGa(1-u-v)P, 0<v<1,0<u<1) and it is doping to n-type half
Conductor, basalis 222 is with one p-n junction 225 of formation of emission layer 223 and comprising a material and with one second band gap, the second band
Gap is less than the first band gap of active layers 152 in light-emitting diode chip for backlight unit, wherein the first band gap is less than with the second band gap difference
0.1eV, such as GaAs (GaAs), phosphorus InGaAsP (In1-xGaxAs1-yPy,0<x<1,0<y<Or InGaAsP (In 1)1- xGaxAs,0<x<1) material, basalis 222 is, for example, a n-type semiconductor, and emission layer 223 is, for example, a p-type semiconductor, luminous two
The light 3 that pole pipe chip is sent is absorbed in p-n junction 225 and produces electronics and hole, and is formed by p-n junction 225
Built in field drive hole and electronics to produce electric current toward window layers 224 and the movement of back surface field layer 221 respectively, window layers
224 material includes aluminum gallium arsenide (AluGa(1-u)As, 0<u<Or AlGaInP (Al 1)uInvGa(1-u-v)P, 0<u<1,0<v<
1) and it is doping to p-type semiconductor, the band gap of window layers 224 is more than the band gap of emission layer 223, can be used to stop hole toward window layers
224 flow and form idle current.In one embodiment of the invention, the substrate of the p-n junction 225 of photo-electric conversion element 2
The material of layer 222 and emission layer 223 is GaAs (GaAs), and absorbable optical wavelength is less than 870nm light to be converted to electricity
Energy；And the active layers 152 of the light-emitting diode chip for backlight unit of light-emitting component 2 comprising a multiple quantum trap structure and are arsenic with a material
Change gallium indium (GaxIn1-xAs, 0.03≤x≤0.09), for sending spike length (Peak wavelength) between 840 and 860nm
Light；Wherein, the band gap of the active layers 152 of light-emitting diode chip for backlight unit is more than the band gap and the difference in band gap of the two of p-n junction 225
It is different to be less than 0.1eV, preferably less than 0.05eV.
As shown in Figure 6A, adhesion coating 56 is located between second electrode 23 and substrate 57 photo-electric conversion element 2 being fixed on
On substrate 57 and second electrode 23 is set to be electrically connected with one the 3rd electrode 23e of substrate 57, many electricity of the connection of metal lines 2,311 first
Pole 24 is electrically connected with the 4th electrode 24e of substrate 57 with being formed.In the present embodiment, surface 2S area is at least above 30mm2。
In one embodiment, the photo-electric conversion element 2 has single solar battery chip, and the solar battery chip is with vertical
The multiple p-n junctions 225 directly stacked, in detail, multiple p-n junctions 225 are vertically stacked on electrically-conductive backing plate 21, plurality of p-
The band gap of n junctions may be the same or different, it is therefore preferable to identical, and the band gap of multiple p-n junctions 225 is smaller than light-emitting diodes tube core
The first band gap of active layers 152 is to absorb light 3 in piece；In another embodiment, the photo-electric conversion element 2 includes multiple sun
Can battery chip, respectively the solar battery chip respectively have one or more vertical stackings p-n junction 225；Semiconductor epitaxial
P-n junction 225 in lamination 22 absorbs light 3 and is converted into after electric energy P2, can pass through first electrode 24 and second electrode 23
Transmit to second can charge and discharge electric device 51 store, the material of first electrode 24 and second electrode 23 comprising germanium (Ge), golden (Au),
Nickel (Ni), beryllium (Be) or its alloy, first electrode 24 connect with the formation low resistance contact of semiconductor epitaxial lamination 22, wherein low resistance
Tactile resistance value is less than 10-4Ω-cm；Second electrode 23 and the formation low resistance contact of electrically-conductive backing plate 21, wherein low resistance contact
Resistance value is less than 10-4Ω-cm。
Such as Fig. 6 C show the top view of photo-electric conversion element 2 and substrate 57 in Fig. 6 A, and the 4th electrode 24e of substrate 57 is electrically connected
Connect first electrode 24, and the 3rd electrode 23e electrical connection second electrodes 23.It is seen from the top view of substrate 57, the 3rd electrode 23e
Photo-electric conversion element 2 is surrounded with the 4th electrode 24e；It is seen from the top view of photo-electric conversion element 2, first electrode 24 includes two-combats
The line electrode 24a and a plurality of gate-shaped electrode 24b being parallel to each other be located at two routing electrode 24a between, a plurality of gate-shaped electrode 24b with
Two routing electrode 24a are vertical and are directly connected to, wherein two routing electrode 24a are a strip, and short side width between 0.1mm
Extend respectively along the relative both sides of chip between 1mm and long side, by many metal lines 2311 across the 3rd electrode 23e and company
Line electrode 24a and the 4th electrode 24e are taken, the 4th electrode 24e is electrically connected routing electrode 24a, a plurality of gate-shaped electrode 24b width
Boundary is spent between 1 μm to 100 μm.3rd electrode 23e electrically connected with the 4th electrode 24e second can charge and discharge electric device 51, to pass
Export electric energy P2 to second can charge and discharge electric device 51 charge.It refer to shown in Fig. 6 A, in operation, light-emitting diode chip for backlight unit goes out
Optical surface 11 is right against surface 2S, first device 5 and second device 6 is aligned and is overlapped, and light 3 is passed through with beeline
Surface 2S makes the p-n junction 225 of photo-electric conversion element 2 absorb light 3 and be converted into electric energy；In the present embodiment, when operation,
The distance between diode chip for backlight unit surface relative with solar battery chip is less than 15mm, preferably less than 10mm；Wherein, light
The conversion efficiency of electric transition element 2 is more than 40%, and conversion efficiency refers to the energy work rate (W) and photoelectricity turn that light 3 injects surface 2S
Change the ratio of the output electric energy of element 2 P2 power (W).When light-emitting component 1 is located normal to the surface 2S's of photo-electric conversion element 2
When on normal direction N, the work(of the output electric energy of photo-electric conversion element 2 P2 power (W) and the first electric energy P1 of input light-emitting component 1
The ratio (P2/P1) of rate (W) is more than 20%.Preferably, photo-translating system can be arranged at first device comprising an alignment device 8
6 with second device 5 to make light-emitting component 1 in alignment with surface 2S normal direction N, in one embodiment, alignment device
It is located at the transparent carrier plate 4 of second device 5 positioned at the surface of first device 6 and a corresponding recess 82 comprising a protuberance 81
Surface, as shown in Figure 6 C, when the protuberance 81 of first device 6 and the chimeric recess 82 of second device 5, light its top view member
Part 1 is vertically right against on surface 2S normal direction N to improve photoelectric transformation efficiency；In another embodiment, first device 6
The second device 5 is removably incorporated into, optionally first device 6 can be incorporated into the second device 5 by user.
Such as other another feasible embodiments of Fig. 7 A and Fig. 7 B for the second device of the present invention, the implementation compared to Fig. 5
Example, Fig. 7 A second device 5 can be arranged in two-dimensional array comprising multiple photo-electric conversion elements 2 '；Or as shown in Figure 7 B, it is many
Individual photo-electric conversion element 2 ' is located on non-display area 54 and arranged along a side of viewing area 53, multiple times of each of which
Photo-electric conversion element 2 ' is identical all with the structure of aforementioned Photon-Electron conversion element 2, is absorbed in all multiple photo-electric conversion elements 2 '
The surface 2S gross areas of light 3 are at least above 30mm2.In another embodiment, first device 6 includes multiple light-emitting components, often
One multiple photo-electric conversion element 2 ' can correspond to each multiple light-emitting component respectively by alignment device 8.Multiple light
Electric transition element 2 ' is connected in parallel to each other on substrate 57, connect or connection in series-parallel is so that photo-electric conversion element 2 has an open-circuit voltage
(open-circuit voltage), wherein open-circuit voltage are more than a driving voltage of driving second device 5 and the two difference is small
In the 20% of driving voltage, because the driving voltage needed for second device 5 is close with the open-circuit voltage that photo-electric conversion element 2 is provided,
System effectiveness thus, it is possible to increase the photo-translating system.
It is noted that each embodiment cited by the present invention is only to illustrate the present invention, and be not used to the limitation present invention
Scope.Anyone makees obvious modification to the present invention or change does not all depart from spirit and scope of the invention.It is different
There is same names or the component with identical label in embodiment, should have identical structure or material property, such as physics
Or chemical characteristic.In addition, each component in the present invention described in the above embodiments, be in appropriate circumstances can be combined with each other or
Replace, rather than be only limitted to described specific embodiment.The particular elements being described in detail in one embodiment and other components
Annexation can also be applied in other embodiment, and is fallen within such as the category of appended the scope of the present invention
In.
Claims (10)
1. a kind of photo-translating system, comprising：
First device, comprising light-emitting component, the wherein light-emitting component receives one first electric energy to drive the light-emitting component to send one
Light；And
Second device, comprising photo-electric conversion element, to absorb the light and to export one second electric energy；
Wherein, the ratio of second electric energy and first electric energy is more than 20%.
2. photo-translating system as claimed in claim 1, the wherein first device can also charge and discharge electric devices, output comprising first
First electric energy, and the power efficiency of the light-emitting component is more than 50%.
3. photo-translating system as claimed in claim 1, also comprising second can charge and discharge electric device, connect the photoelectric conversion element
Part, the wherein photo-electric conversion element with second electric energy to this second can charge and discharge electric device charge.
4. there is the light that photo-translating system as claimed in claim 1, the wherein light-emitting component are sent a spike to grow up
In 720nm.
5. photo-translating system as claimed in claim 1, the wherein photo-electric conversion element include multiple p-n junction vertical stackings
In an one chip.
6. photo-translating system as claimed in claim 1, also comprising alignment device, positioned at the first device and the second device
Between, the light-emitting component is located normal on the normal to a surface direction, and the first device be removably incorporated into this
Two devices.
7. photo-translating system as claimed in claim 1, the wherein photo-electric conversion element have open-circuit voltage, the second device
Comprising electronic circuit component, and the electronic circuit component has driving voltage, and the open-circuit voltage is differed with the driving voltage to be less than
The 20% of the driving voltage.
8. photo-translating system as claimed in claim 1, the wherein second device are an object wearing device, comprising viewing area and
Non-display area abuts the viewing area, and wherein the photo-electric conversion element is located at the non-display area.
9. photo-translating system as claimed in claim 1, the wherein second device include multiple photo-electric conversion elements each other
In parallel or series.
10. photo-translating system as claimed in claim 1, the wherein light-emitting component include light-emitting diode chip for backlight unit, this lights
Diode chip for backlight unit includes active layers, comprising the first band gap to send the light, and the photo-electric conversion element includes an at least p-n junction
Comprising the second band gap, less than first band gap to absorb the light, and first band gap is less than with the second band gap difference
0.1eV。
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| TW105105189 | 2016-02-22 | ||
| TW105105189A TW201731069A (en) | 2016-02-22 | 2016-02-22 | Photo-electrical conversion system |
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Application publication date: 20170829 |