CN107063473B - A kind of ion implanting prepares curved surface focus planar detector of electrode and preparation method thereof - Google Patents
A kind of ion implanting prepares curved surface focus planar detector of electrode and preparation method thereof Download PDFInfo
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- CN107063473B CN107063473B CN201710253080.5A CN201710253080A CN107063473B CN 107063473 B CN107063473 B CN 107063473B CN 201710253080 A CN201710253080 A CN 201710253080A CN 107063473 B CN107063473 B CN 107063473B
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- detector
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- curved surface
- film
- thin film
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 65
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 150000002500 ions Chemical class 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 42
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 239000010936 titanium Substances 0.000 claims abstract description 18
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 18
- TUDPMSCYVZIWFW-UHFFFAOYSA-N [Ti].[In] Chemical compound [Ti].[In] TUDPMSCYVZIWFW-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 106
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 239000011241 protective layer Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 238000012545 processing Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 230000009467 reduction Effects 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- -1 Nitrogen ion Chemical class 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 abstract description 19
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- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000571 coke Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical group [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710253080.5A CN107063473B (en) | 2017-04-18 | 2017-04-18 | A kind of ion implanting prepares curved surface focus planar detector of electrode and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710253080.5A CN107063473B (en) | 2017-04-18 | 2017-04-18 | A kind of ion implanting prepares curved surface focus planar detector of electrode and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107063473A CN107063473A (en) | 2017-08-18 |
CN107063473B true CN107063473B (en) | 2019-03-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710253080.5A Active CN107063473B (en) | 2017-04-18 | 2017-04-18 | A kind of ion implanting prepares curved surface focus planar detector of electrode and preparation method thereof |
Country Status (1)
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CN (1) | CN107063473B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
CN105408769A (en) * | 2013-07-31 | 2016-03-16 | 谷歌公司 | Photodetector array on curved substrate |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005519620A (en) * | 2002-03-12 | 2005-07-07 | アーク・セラピューティックス・リミテッド | Genetically engineered baculovirus and use thereof |
-
2017
- 2017-04-18 CN CN201710253080.5A patent/CN107063473B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
CN105408769A (en) * | 2013-07-31 | 2016-03-16 | 谷歌公司 | Photodetector array on curved substrate |
CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
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CN107063473A (en) | 2017-08-18 |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Curved focal plane detector for preparing electrode by ion implantation and preparation method thereof Effective date of registration: 20211228 Granted publication date: 20190319 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230106 Granted publication date: 20190319 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A curved focal plane detector for preparing electrodes by ion implantation and its preparation method Effective date of registration: 20230113 Granted publication date: 20190319 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20190319 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |