CN107037303A - Detection means and detection method for tested CT secondary side circuit states outside ammeter - Google Patents

Detection means and detection method for tested CT secondary side circuit states outside ammeter Download PDF

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Publication number
CN107037303A
CN107037303A CN201610976017.XA CN201610976017A CN107037303A CN 107037303 A CN107037303 A CN 107037303A CN 201610976017 A CN201610976017 A CN 201610976017A CN 107037303 A CN107037303 A CN 107037303A
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signal
circuit
tested
mcu
secondary side
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CN107037303B (en
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魏法玉
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Beijing Banner Electric Manufacturing Corp
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BEIJING BANNER ELECTRIC MANUFACTURING Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R11/00Electromechanical arrangements for measuring time integral of electric power or current, e.g. of consumption
    • G01R11/02Constructional details
    • G01R11/24Arrangements for avoiding or indicating fraudulent use

Abstract

The invention discloses a kind of detection means and detection method for tested CT secondary side circuit states outside ammeter; including test CT, impedance matching circuit, drive circuit, protection circuit, isolation filter circuit and MCU; test CT primary sides in parallel with impedance matching circuit; MCU is connected by drive circuit with testing the input of CT secondary sides, and the output end of test CT secondary sides is connected by protection circuit and isolation filter circuit with MCU.By in the external test CT of ammeter, the theoretical decision threshold of the normal connection status of suitable high frequency swept-frequency signal generation is selected using MCU, when state change, judge the connection status after changing by passing the relation between the square amplitude of signal and each theoretical decision threshold back, realize different type be tested CT secondary side circuits in real time, the detection of high accuracy, high accuracy, improve anti-electricity-theft level.

Description

Detection means and detection method for tested CT secondary side circuit states outside ammeter
Technical field
The present invention relates to a kind of ammeter detection device, more particularly to one kind can be to tested CT bis- times outside different type ammeter Detection means and detection method that side loop state is detected.
Background technology
With the development and the raising of living standards of the people of market economy, need for electricity increasingly increases.To save with establishing by cable Branch, pursues juice, and many illegal units or individual take various means to carry out stealing, country is suffered tremendous economic Loss.Stealing problem not only perplexs electric power enterprise development, also has a strong impact on the stabilization of state economic order and society, therefore, complete Kind anti-theft electricity technology, effectively containment electricity stealing is significant.
At present, the circuital current meter of double measurement loops is used in electric power resource supply system to prevent electricity stealing Amount pattern, with the difference for counting supply electric current and being lost in electric current, judges that electric power resource regular supply electricity and electric power resource are lost in Gap between electricity.But the judgement for the drain that this method is caused during supply of electric power is carried out for electricity stealing And the identification of electric current stealing mode has certain limitation.
Signal injection method is a kind of detection method for tested CT secondary side circuit states outside ammeter conventional at present, But existing signal injection method is all the higher frequency probe signals by injecting single-frequency to tested CT secondary sides, is detected by measuring Signal voltage square amplitude reaches that exterior of terminal is tested the purpose of CT secondary side circuit state-detections, because CT species is various, The high frequency electrocardiography of single-frequency can not meet the detection that different type is tested CT, and easily produce erroneous judgement, and influence differentiates Accuracy.Detailed process is as shown in figure 1, wherein, signal transacting CPU sends single-frequency(16KHz)Pumping signal, pass through Signal transmission circuit is transmitted into tested CT secondary side circuits, and the feedback of tested CT secondary side circuits is received by signal receiving circuit Signal simultaneously passes to signal transacting CPU, CPU signal is handled and analyzed, and then realizes tested CT secondary side circuits are connected Connect the detection of state.Due to this method using single-frequency as pumping signal, and various, the different tested CT of tested CT species Secondary side equivalent inductance is different, and as a certain tested CT, Detection results are preferable under the frequency, when changing tested CT, if also used The frequency excitation signal, can change normal value, and it is constant with short circuit value to open a way, and makes normal value close to quiescent value or short circuit Value, causes that normal condition is not easily distinguishable with open-circuit condition or normal condition is not easily distinguishable with short-circuit condition, influence judged result, Larger potential safety hazard is buried to ammeter detection process.
Then, the inspection that a kind of applicability is good, highly versatile ammeter outside is tested CT secondary side circuit connection status is designed Device and detection method are surveyed, just turns into the problem of present invention wants to solve.
The content of the invention
In view of above-mentioned existing situation and deficiency, the present invention is intended to provide a kind of be used for tested CT secondary side circuits outside ammeter The detection means and detection method of state, to realize that different type is tested CT secondary side circuits open circuit, short circuit, part outside ammeter Short-circuit and normal the real-time of four kinds of states, high accuracy, high accuracy detection.
The present invention is achieved through the following technical solutions:
A kind of detection means for tested CT secondary side circuit states outside ammeter, including test CT, impedance matching circuit, drive Dynamic circuit, protection circuit, isolation filter circuit and MCU;Test CT primary sides in parallel with impedance matching circuit;MCU passes through driving Circuit is connected with testing the input of CT secondary sides, and the output end of test CT secondary sides passes through protection circuit and isolation filter circuit It is connected with MCU.MCU is used for the generation of swept-frequency signal, passes the collection analysis of signal back, and live self study and logical with ammeter Letter;Impedance matching circuit is electric capacity and resistance parallel with one another;Drive circuit is used for the frequency sweep square wave excitation signal for producing MCU Isolation amplification, and be coupled to after test CT inputs input on tested CT secondary side circuits;Protection circuit is used to prevent high pressure Damage detection module;Isolation filter circuit is used to filter out the signal useless to testing result, and by load signal and tested CT bis- Secondary side loop isolation.
A kind of detection method for tested CT secondary side circuit states outside ammeter, specific steps include:
Before step 1, in-site installation, demarcated in advance in the MCU of detection means and store each high frequency letter in high frequency swept-frequency signal The theoretical decision threshold U open circuits i of corresponding open-circuit condition is U1i ± X% and short-circuit condition theory judgement during number as pumping signal Threshold value U short circuits i is that U4i ± Y%, U1i and U4i are respectively the square amplitude of the corresponding output signal of open-circuit condition and short-circuit condition pair The square amplitude of the output signal answered, i is the sequence number set of all high-frequency signals in swept-frequency signal, i={ 1,2,3 ..., n }, X and Y For regulated variable.
When step 2, in-site installation, staff confirms that tested CT secondary side circuits state is normal condition, by tested CT Secondary side and ammeter measure CT, the primary side of testing CT is composed in series tested CT secondary side circuits, meanwhile, by MCU and ammeter Metering module is connected.
Step 3, MCU send high frequency swept-frequency signal, and tested CT secondary side circuits are coupled to from test CT through overdrive circuit, Meanwhile, signal is coupled to receive from test CT, MCU is passed back by protection circuit and isolation filter circuit, MCU receives all frequency sweeps and swashed Encourage the signal that signal is passed back, pass signal back for different excitation signal i corresponding output signals in normal condition, signal it is square Amplitude is set to U2i, according to the stability for passing signal back and passes signal side amplitude U2i and the phase demarcated in advance in step 1 back The corresponding relation of U1i and U4i under high frequency swept-frequency signal is answered, MCU judges to be adapted to the high frequency swept-frequency signal of the tested CT, and selects The signal is used as detection pumping signal.
Step 4, the live self-learning function of MCU startups write down the corresponding live normal condition of the pumping signal and pass letter back automatically Number square amplitude, and be set as that U2j, j are any sequence number in set i, the theoretical decision threshold U of generation normal condition is normal For U2j ± Z%, Z is regulated variable.
The lower limit of the theoretical decision threshold U partial short circuits of step 5, MCU setting sections short-circuit condition is the theory of normal condition The normal upper limit U2j+Z% of decision threshold U, the upper limit of setting section short-circuit condition theory decision threshold U partial short circuits is step 1 In corresponding high frequency swept-frequency signal the theoretical decision threshold U short circuits j of short-circuit condition lower limit U4j-Y%, for any high frequency pumping letter Relation between number each theoretical decision threshold is:U short circuits>U partial short circuits>U is normal>U opens a way.
Step 6, artificially changed when tested CT secondary sides state, during the high frequency swept-frequency signal j that MCU transmitting selections are completed, The square amplitude of signal of passing back received changes, and MCU passes the square amplitude of signal back and obtained above each according to reception Relation between theoretical decision threshold judges the connection status of tested CT secondary side circuits, i.e.
When the square amplitude for passing signal back falls in the theoretical decision threshold of open-circuit condition, it is judged as open circuit;
When the square amplitude for passing signal back falls in the theoretical decision threshold of short-circuit condition, it is judged as short circuit;
When the square amplitude for passing signal back falls in partial short circuit regime theory decision threshold, it is judged as partial short circuit;
When the square amplitude for passing signal back falls in the theoretical decision threshold of normal condition, it is judged as normal.
In the step 3, MCU judges that the high frequency swept-frequency signal process for being adapted to the tested CT includes:First, selected excitation letter Number to ensure that what MCU received passes signal stabilization back;Secondly, when U2i is located at U1i and U4i centre, i.e.,(U2i-U1i)- (U4i-U2i)->When 0, it is detection pumping signal to select the high frequency swept-frequency signal.
In the step 3, MCU judges that the process for being adapted to the tested CT high frequency swept-frequency signals also includes:When there is several groups U2i When U1i and U4i centre, selection make Δ Ui=(U4i-U2i)Maximum high frequency swept-frequency signal.
Detection means and detection method of the present invention for tested CT secondary side circuit states outside ammeter, by just Under normal connection status, demarcated using MCU and send multiple high frequency swept-frequency signals, obtain tested CT secondary sides in corresponding high frequency frequency sweep Theoretical decision threshold under signal under the theoretical decision threshold and each state of the square amplitude of normal condition output signal, as tested CT During secondary side state change, according to the relation between the square amplitude received and each theoretical decision threshold, complete outside ammeter Different type is tested CT secondary side circuits open circuit, short circuit, partial short circuit and normal the real-time of four kinds of states, high accuracy, Gao Zhun Exactness is detected, improves anti-electricity-theft level, the problem of different type CT is detected can not be applicable by solving existing signal injection method, be carried The high applicability of detection process, reliability is high, cost is low, easy to detect, is adapted to produce in enormous quantities and uses.
Brief description of the drawings
Fig. 1 is the general structure schematic diagram of existing signal injection method;
Fig. 2 is the structural representation of the present invention for the detection means of tested CT secondary side circuit states outside ammeter;
Fig. 3 is the structural representation of drive circuit;
Fig. 4 is the structural representation of protection circuit;
Fig. 5 is the structural representation of isolation filter circuit;
Fig. 6 is the equivalent circuit diagram of the present invention for the detection means of tested CT secondary side circuit states outside ammeter.
Embodiment
Below in conjunction with the accompanying drawings to the detection means of the present invention for tested CT secondary side circuit states outside ammeter It is described in further detail:
As shown in Fig. 2 the detection means of the present invention for tested CT secondary side circuit states outside ammeter, including test CT, impedance matching circuit, drive circuit, protection circuit, isolation filter circuit and MCU.Wherein, test CT primary sides and impedance With circuit in parallel, MCU is connected by drive circuit with testing the input of CT secondary sides, and the output end of test CT secondary sides passes through Protection circuit and isolation filter circuit are connected with MCU.During specific works, CT secondary side and ammeter metering CT, test CT is tested Primary side be composed in series tested CT secondary side circuits, MCU is connected with ammeter metering module.
MCU is used for the generation of swept-frequency signal, passes the collection analysis of signal back, and live self study and is communicated with ammeter, MCU is needed to select a certain high-frequency signal first in high frequency swept-frequency signal for different tested CT, it is normal as the tested CT The detection signal of state, when tested CT normal conditions are changed, MCU according to the high-frequency signal pass back the square amplitude of signal with Relation between each regime theory decision threshold, it is in open circuit, short circuit, partial short circuit, just to judge tested CT secondary side circuits It is any in normal state, so as to complete tested CT detection.
The frequency sweep square wave excitation signal isolation that drive circuit is used to produce MCU is amplified, and is inputted from test CT inputs After be coupled on tested CT secondary side circuits.Impedance matching circuit is electric capacity and resistance parallel with one another, with test CT, tested CT Etc. collectively constituting RLC parallel circuits.As shown in figure 3, drive circuit is made up of two amplifiers and resistance R1, R2, first fortune Composition follower is put, plays a part of signal isolation, second amplifier and resistance R1, R2 composition amplifier, plays signal and put Big effect.
Protection circuit is mainly made up of devices such as piezo-resistance, amplitude limits, for avoiding issuable high pressure from damaging inspection The occurrence of surveying module.As shown in figure 4, protection circuit by resistance R, two diodes VD1 and VD2, two source of stable pressure E1 and E2 and piezo-resistance RV composition, Ui is input, and Uo is the series connection of output end, wherein VD1 and E1, and VD2 and E2 connect, And the opposite polarity connected, then both are in parallel, then are connected with resistance R, and this part is double limiting circuit, the amplitude of limitation For E1+VD1 and-(E2+VD2), piezo-resistance RV is parallel in circuit, when the voltage being added on piezo-resistance RV exceedes its threshold During value, flow through its electric current and increase sharply, equivalent to the infinitesimal resistance of resistance, so as to play a part of overvoltage protection.
Isolation filter circuit is used to filter out the signal useless to testing result, and load signal and tested CT secondary sides are returned Road isolates, and prevents load from being interfered to loop state, influences judged result.As shown in figure 5, isolation filter circuit is by two fortune Put, resistance R1, R2, R3, Ra, Rb and electric capacity C1, C2 are constituted.Wherein first amplifier constitutes follower, circuit input resistance Anti- height, output impedance is low, plays buffer action, and load signal is isolated with self-maintained circuit, prevents load to self-oscillation Circuit produces influence;Second amplifier and resistance R1, R2, R3, Ra, Rb and electric capacity C1, C2 composition bandwidth-limited circuit, are used for Filter out to detecting useless low frequency and high-frequency interferencing signal.
In said structure, swept-frequency signal is sent using MCU, is selected according to the tested CT of difference in swept-frequency signal suitably Frequency is as pumping signal, and the theoretical decision threshold of the live self-learning function generation normal condition using MCU, as tested CT After state change, by the ratio for passing the square amplitude of signal and theoretical decision threshold under each state back for selecting frequency excitation signal Compared with realizing different type outside ammeter and be tested CT secondary side circuits open circuit, short circuit, partial short circuit and normal four kinds of state realities When, the detection of high accuracy, high accuracy, solve existing injection method can not be applicable different type be tested CT the problem of.
Below to the specific inspection of the present invention for the detection means of tested CT secondary side circuit states outside ammeter Survey process is described in further detail:
Detection method of the present invention for tested CT secondary side circuit states outside ammeter, specific steps include:
Before step 1, in-site installation, demarcated in advance in the MCU of detection means and store each high frequency letter in high frequency swept-frequency signal The theoretical decision threshold U open circuits i of corresponding open-circuit condition is U1i ± X% and short-circuit condition theory judgement during number as pumping signal Threshold value U short circuits i is that U4i ± Y%, U1i and U4i are respectively the square amplitude of the corresponding output signal of open-circuit condition and short-circuit condition pair The square amplitude of the output signal answered, i is the sequence number set of all high-frequency signals in swept-frequency signal, i={ 1,2,3 ..., n }, X and Y is regulated variable.
When MCU enters row energization one by one by the high frequency swept-frequency signal of demarcation to tested CT, it can readily obtain in open circuit The theoretical decision threshold of open-circuit condition corresponding with the high frequency swept-frequency signal under short-circuit condition and the theoretical decision threshold of short-circuit condition, be Later stage judges that tested CT secondary sides square amplitude of signal under the high frequency swept-frequency signal is delimitated.
Under open circuit or short-circuit condition, tested CT theoretical decision threshold will not change with the change of its structure or model Become, therefore CT theoretical judgement is tested under when being directed to each high-frequency signal as pumping signal of deposit, its open circuit or short-circuit condition Threshold value is consistent.
When step 2, in-site installation, staff confirms that tested CT secondary side circuits state is normal condition, by tested CT Secondary side and ammeter measure CT, the primary side of testing CT is composed in series tested CT secondary side circuits, meanwhile, by MCU and ammeter Metering module is connected.
For convenience of detection process, this method is that, in the external test CT of ammeter, test CT primary sides measure CT once with ammeter Side is concatenated, and test CT primary sides are concatenated with tested CT secondary sides outside ammeter, and tested CT secondary sides are measured with ammeter outside ammeter CT primary sides are concatenated.Inside detection means, test CT primary sides are in parallel with impedance matching circuit, MCU by drive circuit and The input connection of CT secondary sides is tested, the output end of test CT secondary sides passes through protection circuit and isolation filter circuit and MCU Connection.
Step 3, MCU send high frequency swept-frequency signal, and tested CT secondary side circuits are coupled to from test CT through overdrive circuit, Meanwhile, signal is coupled to receive from test CT, MCU is passed back by protection circuit and isolation filter circuit, MCU receives all frequency sweeps and swashed Encourage the signal that signal is passed back, pass signal back for different excitation signal i corresponding output signals in normal condition, signal it is square Amplitude is set to U2i, according to the stability for passing signal back and passes signal side amplitude U2i and the phase demarcated in advance in step 1 back The corresponding relation of U1i and U4i under high frequency swept-frequency signal is answered, MCU judges to be adapted to the high frequency swept-frequency signal of the tested CT, and selects The signal is used as detection pumping signal.
Specific deterministic process includes:First, selected pumping signal will ensure the stability for passing signal back that MCU is received; Secondly, selected pumping signal can guarantee that square amplitude U2i of the output signal of different tested CT secondary side circuit normal conditions In the middle of the square amplitude U4i of output signal of output signal side amplitude U1i and the short-circuit condition of open-circuit condition, i.e.,(U2i- U1i)-(U4i-U2i)->0;Finally, when having several groups of pumping signals while meeting above-mentioned condition, selection make Δ Ui=(U4i-U2i) Maximum pumping signal, makes the square amplitude difference maximum of the signal between different conditions, and the different connection status after change are more held Easily distinguish.
Step 4, the live self-learning function of MCU startups write down the corresponding live normal condition of the pumping signal and pass letter back automatically Number square amplitude, and be set as that U2j, j are the either element in set i, the theoretical decision threshold U of generation normal condition is normal For U2j ± Z%, Z is regulated variable.
The lower limit of the theoretical decision threshold U partial short circuits of step 5, MCU setting sections short-circuit condition is the theory of normal condition The normal upper limit U2j+Z% of decision threshold U, the upper limit of setting section short-circuit condition theory decision threshold U partial short circuits is step 1 In corresponding high frequency swept-frequency signal the theoretical decision threshold U short circuits j of short-circuit condition lower limit U4j-Y%, for any high frequency pumping letter Relation between number each theoretical decision threshold is:U short circuits>U partial short circuits>U is normal>U opens a way.
So far, under the normal connection status of tested CT secondary sides, the theoretical decision threshold of each state is set, and is stored in In MCU.
Step 6, it is changed when tested CT secondary side states, during the high frequency swept-frequency signal j that MCU transmitting selections are completed, receives To the square amplitude of signal of passing back change, MCU passes the square amplitude of signal and each theory obtained above back according to reception Relation between decision threshold judges the connection status of tested CT secondary side circuits, i.e.
When the square amplitude for passing signal back falls in the theoretical decision threshold of open-circuit condition, it is judged as open circuit;
When the square amplitude for passing signal back falls in the theoretical decision threshold of short-circuit condition, it is judged as short circuit;
When the square amplitude for passing signal back falls in partial short circuit regime theory decision threshold, it is judged as partial short circuit;
When the square amplitude for passing signal back falls in the theoretical decision threshold of normal condition, it is judged as normal.
The theoretical foundation of the deterministic process of above-mentioned steps 6 is described as follows:
As shown in fig. 6, the circuit of whole detection means can be regarded as by testing CT primary side equivalent inductance Lcs, CT bis- is tested Secondary side equivalent inductance Lbc measures CT primary side equivalent inductance Ljl sum Lbc+Ljl, and impedance matching circuit parallel connection with ammeter The RLC parallel circuits that collectively constitute of R, C, the equivalent admittance of circuit is:
Wherein w is the frequency of Injection Signal, and j is vector,
The equivalent input impedance of circuit is:
When frequency is fixed, ammeter metering CT primary side equivalent inductances Ljl, impedance matching circuit shunt capacitance C, test CT are once Side equivalent inductance Lcs is constant, and input impedance Zin is determined by Lbc, and tested CT secondary side circuits state change can cause Lbc change Change, when tested CT secondary sides are opened a way, Lbc approach infinities,
When short-circuit, Lbc is 0,
When normal,
The input impedance value of partial short circuit is located at normal between short circuit, tested CT secondary side circuits state difference, input impedance Difference, MCU receive pass back signal square amplitude it is also different, MCU is according to the square amplitude and each state of passing signal back of reception Relation between lower theoretical decision threshold judges tested CT secondary side circuit connection status.
When changing tested CT, Lbc changes, if using same frequency, normal value changes, and opens a way constant with short circuit value, Normal value is not located at open circuit with that in the middle of short circuit value, if Lbc changes very big, can cause normal value close to quiescent value or short circuit Value, causes that normal condition is not easily distinguishable with open-circuit condition or normal condition is not easily distinguishable with short-circuit condition, so replacing is tested During CT, need to select suitable pumping signal according to the above method in high frequency swept-frequency signal again, and need again live self study, Obtain the theoretical decision threshold of new normal condition and the theoretical decision threshold of partial short circuit state, open circuit and the reason of short-circuit condition It is not change with tested CT change by decision threshold, so as to realize different type CT secondary side circuit states well Detection.

Claims (4)

1. a kind of detection means for tested CT secondary side circuit states outside ammeter, it is characterised in that including test CT, resistance Anti- match circuit, drive circuit, protection circuit, isolation filter circuit and MCU;The test CT primary sides and impedance matching circuit It is in parallel;The MCU is connected by drive circuit with testing the input of CT secondary sides, tests the output end of CT secondary sides by protecting Protection circuit and isolation filter circuit are connected with MCU;
The MCU is used for the generation of swept-frequency signal, passes the collection analysis of signal back, and live self study and is communicated with ammeter;
The impedance matching circuit is electric capacity and resistance parallel with one another;
The frequency sweep square wave excitation signal isolation that the drive circuit is used to produce MCU is amplified, and is inputted from test CT inputs After be coupled on tested CT secondary side circuits;
The protection circuit is used to prevent high pressure from damaging detection module;
The isolation filter circuit is used to filter out the signal useless to testing result, and load signal and tested CT secondary sides are returned Road isolates.
2. a kind of detection side based on the detection means for being used to outside ammeter be tested CT secondary side circuit states described in claim 1 Method, it is characterised in that specific steps include:
Before step 1, in-site installation, demarcated in advance in the MCU of detection means and store each high frequency letter in high frequency swept-frequency signal The theoretical decision threshold U open circuits i of corresponding open-circuit condition is U1i ± X% and short-circuit condition theory judgement during number as pumping signal Threshold value U short circuits i is that U4i ± Y%, U1i and U4i are respectively the square amplitude of the corresponding output signal of open-circuit condition and short-circuit condition pair The square amplitude of the output signal answered, i is the sequence number set of all high-frequency signals in swept-frequency signal, i={ 1,2,3 ..., n }, X and Y For regulated variable;
When step 2, in-site installation, staff confirms that tested CT secondary side circuits state is normal condition, by the two of tested CT CT is measured in secondary side with ammeter, test CT primary side is composed in series tested CT secondary side circuits, meanwhile, MCU and ammeter are measured Module is connected;
Step 3, MCU send high frequency swept-frequency signal, are coupled to tested CT secondary side circuits from test CT through overdrive circuit, together When, signal is coupled to receive from test CT, MCU is passed back by protection circuit and isolation filter circuit, MCU receives all swept frequency excitations The signal that signal is passed back, passes signal back for different excitation signal i corresponding output signals in normal condition, the square width of signal Value is set to U2i, according to the stability for passing signal back and to pass signal side amplitude U2i back corresponding to what is demarcated in advance in step 1 U1i and U4i corresponding relation under high frequency swept-frequency signal, MCU judges to be adapted to the high frequency swept-frequency signal of the tested CT, and selects to be somebody's turn to do Signal is used as detection pumping signal;
Step 4, the live self-learning function of MCU startups write down the corresponding live normal condition of the pumping signal and pass signal back automatically Square amplitude, and it is set as that U2j, j are any sequence number in set i, the theoretical decision threshold U of generation normal condition is normally U2j ± Z%, Z are regulated variable;
The lower limit of the theoretical decision threshold U partial short circuits of step 5, MCU setting sections short-circuit condition is adjudicated for the theoretical of normal condition The normal upper limit U2j+Z% of threshold value U, the upper limit of setting section short-circuit condition theory decision threshold U partial short circuits is phase in step 1 The theoretical decision threshold U short circuits j of short-circuit condition of high frequency swept-frequency signal lower limit U4j-Y% is answered, it is each for any high-frequency excitation signal Relation between theoretical decision threshold is:U short circuits>U partial short circuits>U is normal>U opens a way;
Step 6, artificially changed when tested CT secondary sides state, during the high frequency swept-frequency signal j that MCU transmitting selections are completed, received To the square amplitude of signal of passing back change, MCU passes the square amplitude of signal and each theory obtained above back according to reception Relation between decision threshold judges the connection status of tested CT secondary side circuits, i.e.
When the square amplitude for passing signal back falls in the theoretical decision threshold of open-circuit condition, it is judged as open circuit;
When the square amplitude for passing signal back falls in the theoretical decision threshold of short-circuit condition, it is judged as short circuit;
When the square amplitude for passing signal back falls in partial short circuit regime theory decision threshold, it is judged as partial short circuit;
When the square amplitude for passing signal back falls in the theoretical decision threshold of normal condition, it is judged as normal.
3. a kind of detection method for tested CT secondary side circuit states outside ammeter according to claim 2, it is special Levy and be, in the step 3, MCU judges that the high frequency swept-frequency signal process for being adapted to the tested CT includes:First, selected excitation letter Number to ensure that what MCU received passes signal stabilization back;Secondly, when U2i is located at U1i and U4i centre, i.e.,(U2i-U1i)- (U4i-U2i)->When 0, it is detection pumping signal to select the high frequency swept-frequency signal.
4. a kind of detection method for tested CT secondary side circuit states outside ammeter according to claim 3, it is special Levy and be, MCU judges that the process for being adapted to the tested CT high frequency swept-frequency signals also includes:It is located at U1i's and U4i when there are several groups of U2i When middle, selection make Δ Ui=(U4i-U2i)Maximum high frequency swept-frequency signal.
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CN110632448A (en) * 2019-09-16 2019-12-31 深圳供电局有限公司 Wiring detection method for three-phase three-wire metering device with mutual inductor
CN111090072A (en) * 2020-03-24 2020-05-01 北京锐创新智科技有限公司 CT loop wireless automatic checking device and checking method
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CN107861093A (en) * 2017-11-18 2018-03-30 深圳供电局有限公司 A kind of portable electric energy measurent wiring calibration equipment
CN107861093B (en) * 2017-11-18 2023-12-15 深圳供电局有限公司 Portable electric energy metering wiring verification device
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CN110346684A (en) * 2018-04-02 2019-10-18 佛山市顺德区美的电热电器制造有限公司 The winding coil method of inspection, device, cooking apparatus and readable storage medium storing program for executing
CN108710054A (en) * 2018-05-25 2018-10-26 云南电网有限责任公司曲靖供电局 Wiring state detection device, method and the secondary circuit system of secondary circuit
CN110632448A (en) * 2019-09-16 2019-12-31 深圳供电局有限公司 Wiring detection method for three-phase three-wire metering device with mutual inductor
CN110632448B (en) * 2019-09-16 2022-07-15 深圳供电局有限公司 Wiring detection method for three-phase three-wire metering device with mutual inductor
CN110488215A (en) * 2019-09-17 2019-11-22 深圳市晶扬电子有限公司 Current transformer tests circuit, method and device
CN112285618A (en) * 2019-12-20 2021-01-29 青岛鼎信通讯股份有限公司 Scheme for detecting CT secondary side wiring state
CN111090072B (en) * 2020-03-24 2020-07-31 北京锐创新智科技有限公司 CT loop wireless automatic checking device and checking method
CN111090072A (en) * 2020-03-24 2020-05-01 北京锐创新智科技有限公司 CT loop wireless automatic checking device and checking method
CN112114218A (en) * 2020-09-22 2020-12-22 上海无线电设备研究所 High-level test system for HIRF test and verification method
CN112114218B (en) * 2020-09-22 2024-02-23 上海无线电设备研究所 High-level test system for HIRF test and verification method

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