CN107005777B - 一种类钻碳振动膜的制作方法及一种扬声器 - Google Patents

一种类钻碳振动膜的制作方法及一种扬声器 Download PDF

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CN107005777B
CN107005777B CN201780000100.6A CN201780000100A CN107005777B CN 107005777 B CN107005777 B CN 107005777B CN 201780000100 A CN201780000100 A CN 201780000100A CN 107005777 B CN107005777 B CN 107005777B
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邱士嘉
杨磊
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Wanmo acoustics Co.,Ltd.
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Abstract

本发明涉及一种类钻碳膜的制作方法,包括步骤:将一基材放置于空气中,所述基材为高分子材料;类钻碳复合膜沉积的步骤包括:在低于90℃的温度条件下,从大气压电浆化学气相沉积装置的一端通入含碳气体,并提供10千伏以下且5千伏以上的电压解离所述含碳气体,从所述大气压电浆化学气相沉积装置的另一端通入主气体,解离后的所述含碳气体被所述主气体带出所述大气压电浆化学气相沉积装置并沉积在所述基材的表面形成类钻碳复合膜;类钻碳振动膜成型的步骤包括:从所述类钻碳复合膜中裁切所需直径的类钻碳振动膜,并通过压制工艺形成所需形状的类钻碳振动膜;或通过压制工艺在类钻碳复合膜上压制形成所需形状和直径的类钻碳振动膜,并裁切所述类钻碳振动膜。本发明的类钻碳振动膜的制作方法,相比于传统的电浆辅助化学气相沉积和物理气相沉积的制作方法,只需在大气压环境、低温环境下就可实现类钻碳膜的沉积,无需设置真空腔体和真空装置,简化了制程。并且在低温环境下,能够避免高温导致的穿膜或热变形引起的膜皱掉,形成的类钻碳振动膜更为平坦。

Description

一种类钻碳振动膜的制作方法及一种扬声器
技术领域
本发明涉及,特别是涉及一种类钻碳振动膜的制作方法及一种扬声器。
背景技术
类钻碳(Diamond Like Carbon,简称DLC)技术发展于1970年代初期,本质是一种含氢的非晶质碳膜,由于具有和天然钻石相近的性质,如高硬度、耐腐蚀性佳、表面平滑、摩擦系数小、抗磨耗性佳、生物相容性佳等,因此被用于喇叭振动膜上以延伸高频。但是,由于其分子结构中含有被扭曲的sp3键,具有较高的内应力,附着性往往不佳,容易产生破裂、剥落等问题。
现有的类钻碳膜制作方法多采用电浆辅助化学气相沉积(Plasma EnhancedChemical Vapor Deposition,PECVD)和物理气相沉积(Physical Vapor Deposition,PVD),传统的电浆辅助化学气相沉积需在高温、真空条件下进行,传统的物理气相沉积需在真空条件下进行,制程步骤和装置均复杂,且热应力残留导致类钻碳膜附着力差,往往还需要另外设置中介层或添加其它元素进行类钻碳膜的沉积,才能解决附着力差的问题,增加了制程步骤,且附着力也很难保证。
发明内容
基于此,有必要提供一种能够提高类钻碳膜附着力及制程步骤简单的类钻碳振动膜制作方法。
本发明提供一种类钻碳振动膜的制作方法,包括步骤:
将一基材放置于空气中,所述基材为高分子材料;
类钻碳复合膜沉积的步骤包括:在低于90℃的温度条件下,从大气压电浆化学气相沉积装置的一端通入含碳气体,并提供10千伏以下且5千伏以上的电压解离所述含碳气体,从所述大气压电浆化学气相沉积装置的另一端通入主气体,解离后的所述含碳气体被所述主气体带出所述大气压电浆化学气相沉积装置并沉积在所述基材的表面形成类钻碳复合膜;
类钻碳振动膜成型的步骤包括:从所述类钻碳复合膜中裁切所需直径的类钻碳振动膜,并通过压制工艺形成所需形状的类钻碳振动膜;或通过压制工艺在类钻碳复合膜上压制形成所需形状和直径的类钻碳振动膜,并裁切所述类钻碳振动膜。
在其中一个实施例中,所述类钻碳复合膜沉积的步骤之前还包括,将大气压电浆化学气相沉积装置的喷嘴与所述基材之间保持1至3厘米距离。
在其中一个实施例中,所述主气体为干洁大气、氮气和氧气中的一种。
在其中一个实施例中,所述类钻碳振动膜的厚度为20纳米至100纳米之间。
在其中一个实施例中,所述基材的厚度为9微米至50微米之间。
本发明的类钻碳振动膜的制作方法,相比于传统的电浆辅助化学气相沉积和物理气相沉积的制作方法,只需在大气压环境、低温环境下就可实现类钻碳膜的沉积,无需设置真空腔体和真空装置,简化了制程。并且在低温环境下,能够避免高温导致的穿膜或热变形引起的膜皱掉,形成的类钻碳振动膜更为平坦。
本发明还提供一种扬声器,包括:磁系统、音圈和前述所述的类钻碳振动膜,所述音圈一端与所述类钻碳振动膜连接,所述音圈另一端插入所述磁系统产生的磁场内。
本发明的扬声器,由于具有的类钻碳振动膜由前述方法制得,相比于传统的电浆辅助化学气相沉积和物理气相沉积的制作方法,只需在大气压环境、低温环境下就可实现类钻碳膜的沉积,无需设置真空腔体和真空装置,简化了制程。并且在低温环境下,能够避免高温导致的穿膜或热变形引起的膜皱掉,制成的类钻碳振动膜更为平坦。具有该类钻碳振动膜的扬声器高频性能表现较优。
附图说明
图1为本发明类钻碳振动膜的制作方法的实施例一的流程图一;
图2为本发明类钻碳振动膜的制作方法的实施例一的流程图二;
图3为本发明类钻碳振动膜的制作方法的实施例一的所使用的装置示意图;
图4为本发明类钻碳振动膜的制作方法的实施例一一实施方式的类钻碳振动膜的频响曲线图;
图5为本发明类钻碳振动膜的制作方法的实施例一一实施方式的类钻碳振动膜的失真曲线图;
图6为本发明类钻碳振动膜的制作方法的实施例一再一实施方式的类钻碳振动膜的频响曲线图;
图7为本发明类钻碳振动膜的制作方法的实施例一再一实施方式的类钻碳振动膜的失真曲线图;
图8为本发明类钻碳振动膜的制作方法的实施例一第三实施方式的普通振动膜与类钻碳振动膜的频响曲线图;
图9为本发明类钻碳振动膜的制作方法的实施例一第三实施方式的普通振动膜与类钻碳振动膜的失真曲线图。
具体实施方式
为了便于理解本发明,下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施方式。但是,本发明可以以许多不同的形式来实现,并不限于本文所描述的实施方式。相反地,提供这些实施方式的目的是使对本发明的公开内容理解的更加透彻全面。
需要说明的是,当元件被称为“固定于”另一个元件,它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件,它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“内”、“外”、“左”、“右”以及类似的表述只是为了说明的目的,并不表示是唯一的实施方式。
请参阅图1和图3所示,本发明提供一种类钻碳振动膜的制作方法,包括步骤:
将一基材1放置于空气中,所述基材为高分子材料,优选的,所述基材为聚醚酰亚胺(PEI)、聚对苯二甲酸乙二醇酯(PET)、聚醚醚酮(PEEK)、聚苯硫醚(PPS)、聚氨基甲酸酯(PU)中的任意一种高分子材料制成的薄膜。本实施例中进一步的,在大气压环境中设置一工作平台2,将基材放置在工作平台2上;为了确保制作过程中基材固定不动,可通过夹具将基材1夹紧在工作平台2上,或通过真空吸附装置将基材1吸附固定在工作平台2上。
类钻碳复合膜沉积的步骤包括:在低于90℃的温度条件下,从大气压电浆化学气相沉积装置3的一端通入含碳气体,并提供10千伏以下且5千伏以上的电压解离含碳气体,从大气压电浆化学气相沉积装置3的另一端通入主气体,解离后的含碳气体被主气体将带出大气压电浆化学气相沉积装置3并沉积在基材1的表面形成类钻碳复合膜;优选的,含碳气体和主气体同时分别从大气压电浆化学气相沉积装置3的一端和另一端通入,在其它实施例中,含碳气体和主气体先后通入大气压电浆化学气相沉积装置3。本实施例中,含碳气体通过10千伏以下且5千伏以上的电压解离后每单位体积内的带电粒子数在1011~1013之间。由于整个制作方法在低于90℃的温度条件下进行,基材1不会有热应力残留,形成的类钻碳复合膜非常光滑平坦。
本实施例中,将含碳气体通入大气压电浆化学气相沉积装置3中解离成电浆态,将解离后电浆态的含碳气体通过主气体的气流带出装置3并沉积在基材表面上;具体的,含碳气体解离成的电浆态的碳离子被主气体的气流带出并在基材表面上进行分子重新排列而形成类钻碳膜。优选的,主气体的气流流速控制在标准状态下(即1个大气压,25摄氏度)30~40L/min范围内,以更好地将解离后电浆态的所述含碳气体带出并沉积在所述基材的表面上,提高沉积效率。
类钻碳振动膜成型的步骤包括:从所述类钻碳复合膜中裁切所需直径的类钻碳振动膜,并通过压制工艺形成所需形状的类钻碳振动膜,具体的,在批量生产中,从整片类钻碳复合膜同时裁切多个类钻碳振动膜,裁切完后压制成所需形状的类钻碳振动膜,例如:曲面膜;或通过压制工艺在类钻碳复合膜上压制形成所需形状和直径的类钻碳振动膜,并裁切所述类钻碳振动膜,具体的,在批量生产中,从整片类钻碳复合膜同时压制形成多个所需形状和直径的类钻碳振动膜,压制完后裁切。
本实施例中,如图2和图3所示,类钻碳复合膜沉积步骤之前还包括,将大气压电浆化学气相沉积装置的喷嘴33与基材1之间保持1至3厘米距离,具体的,大气压电浆化学气相沉积的装置的喷嘴33的出口332与基材1之间保持1至3厘米距离;保持的距离根据装置的扫描移动速度和提供的电压而定,优选的,当扫描移动速度200mm/s、提供电压6.5千伏时,保持在1.5厘米距离。
本实施例中,如图3所示,大气压电浆化学气相沉积装置3包括:解离装置31、控制器、喷嘴33、主气体供气系统35、含碳气体供气系统34以及排气系统。
解离装置31包括交流电源314、壳体311和设于壳体311内的电极,电极包括设于壳体311内的中心电极312以及设于壳体311上的第一电极313,交流电源314与中心电极连接,优选的,所述第一电极313设于壳体311的内壁上并接地。主气体供气系统35将主气体从喷嘴的入口331通入,并通过中心电极312和第一电极313之间形成的高压电场以螺旋方式往喷嘴33方向流动。
含碳气体供气系统34将含碳气体从靠近喷嘴33的的侧面通入,含碳气体的出口处周边形成电浆产生区,部分含碳气体在中心电极312和第一电极313之间产生的高压电场形成的电浆产生区中发生解离。
控制器控制交流电源314提供10千伏以下且5千伏以上的电压给中心电极,以产生解离含碳气体所需的能量,并以此控制解离的稳定性。
排气系统回收主气体、含碳气体和解离后的所述含碳气体。
本实施例中,所述主气体为干洁大气、氮气和氧气中的一种或是三者的任意混合,所述含碳气体为烷烃气体、烯烃气体或炔烃气体。
本实施例中,所述类钻碳膜的厚度为20纳米至100纳米之间。若低于20纳米,则形成的类钻碳振动膜不能起到提高高频性能的效果;若高于100纳米,则类钻碳膜容易干化成粉末状,同样不能起到提高高频性能的效果。
具体的,在大气压电浆化学气相沉积装置的喷嘴与所述基材之间的距离保持固定的情况下,类钻碳膜的厚度由电浆态的碳离子的密度和沉积停留时间决定。相同的电浆态碳离子密度下,如果停留时间过长,会造成局部膜太厚,反之,会造成局部太薄。
具体实施方式一
提供6.5千伏的电压,大气压电浆化学气相沉积的装置的喷嘴33的出口332与基材1之间保持1.5厘米距离,能将95%以上的含碳气体解离,电浆态碳离子的密度达到约1012,扫描移动速度200mm/s,扫描一个来回,形成的类钻碳膜厚度20纳米,扫描两个来回,形成的类钻碳膜厚度40纳米,扫描三个来回,形成的类钻碳膜厚度60纳米。
具体实施方式二
提供5千伏的电压,大气压电浆化学气相沉积的装置的喷嘴33的出口332与基材1之间保持1.5厘米距离,能将约90%以上的含碳气体解离,电浆态碳离子的密度达到约1011,扫描移动速度150mm/s,扫描一个来回,形成的类钻碳膜厚度20纳米,扫描两个来回,形成的类钻碳膜厚度40纳米,扫描三个来回,形成的类钻碳膜厚度60纳米。
具体实施方式三
提供10千伏的电压,大气压电浆化学气相沉积的装置的喷嘴33的出口332与基材1之间保持1.5厘米距离,能将约99%的含碳气体解离,电浆态碳离子的密度达到约1013,扫描移动速度250mm/s,扫描一个来回,形成的类钻碳膜厚度20纳米,扫描两个来回,形成的类钻碳膜厚度40纳米,扫描三个来回,形成的类钻碳膜厚度60纳米。
本实施例中,所述基材1的厚度为9微米至50微米之间。若低于9微米,则基材容易在镀膜过程中被击穿;若高于50微米,则不适合当膜片使用。
以下提供所需类钻碳膜的厚度与所需基材1厚度的关系以及高频性能如下表:
Figure GDA0002319610650000061
Figure GDA0002319610650000071
如图4和图5所示,当类钻碳膜厚度为20纳米、基材厚度为9微米时,高频延伸到40KHz,且失真小。
如图6和图7所示,当类钻碳膜厚度为20纳米、基材厚度为12微米时,高频延伸到40KHz,且失真小。
如图8所示,当类钻碳膜厚度为60纳米、基材厚度为50微米时,类钻碳振动膜在高频延伸较普通振动膜好,低中高频响的整体平衡也较好。如图9所示,普通振动膜在3~4KHz间有严重失真,会影响音质表现,类钻碳振动膜在全频域的失真表现优异,有助于音质表现。
本发明的类钻碳振动膜的制作方法,相比于传统的电浆辅助化学气相沉积和物理气相沉积的制作方法,只需在大气压环境、低温环境下就可实现类钻碳膜的沉积,无需设置真空腔体和真空装置,简化了制程。并且在低温环境下,能够避免高温导致的穿膜或热变形引起的膜皱掉,形成的类钻碳振动膜更为平坦。
本发明提供一种扬声器,包括:磁系统、音圈和前述所述的类钻碳振动膜,所述音圈一端与所述类钻碳振动膜连接,所述音圈另一端插入所述磁系统产生的磁场内。
本发明的扬声器,由于具有的类钻碳振动膜由前述方法制得,相比于传统的电浆辅助化学气相沉积和物理气相沉积的制作方法,只需在大气压环境、低温环境下就可实现类钻碳膜的沉积,无需设置真空腔体和真空装置,简化了制程。并且在低温环境下,能够避免高温导致的穿膜或热变形引起的膜皱掉,制成的类钻碳振动膜更为平坦。具有该类钻碳振动膜的扬声器高频性能表现较优。
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。

Claims (6)

1.一种类钻碳振动膜的制作方法,其特征在于,包括步骤:
将一基材放置于空气中,所述基材为高分子材料;
类钻碳复合膜沉积的步骤包括:在低于90℃的温度条件下,从大气压电浆化学气相沉积装置的一端通入含碳气体,并提供10千伏以下且5千伏以上的电压解离所述含碳气体,从所述大气压电浆化学气相沉积装置的另一端通入主气体,解离后的所述含碳气体被所述主气体带出所述大气压电浆化学气相沉积装置并沉积在所述基材的表面形成类钻碳复合膜;
类钻碳振动膜成型的步骤包括:从所述类钻碳复合膜中裁切所需直径的类钻碳振动膜,并通过压制工艺形成所需形状的类钻碳振动膜;或通过压制工艺在类钻碳复合膜上压制形成所需形状和直径的类钻碳振动膜,并裁切所述类钻碳振动膜。
2.根据权利要求1所述的类钻碳振动膜的制作方法,其特征在于,所述类钻碳复合膜沉积的步骤之前还包括,将大气压电浆化学气相沉积装置的喷嘴与所述基材之间保持1至3厘米距离。
3.根据权利要求1所述的类钻碳振动膜的制作方法,其特征在于,所述主气体为干洁大气、氮气和氧气中的一种。
4.根据权利要求1所述的类钻碳振动膜的制作方法,其特征在于,所述类钻碳振动膜的厚度为20纳米至100纳米之间。
5.根据权利要求1所述的类钻碳振动膜的制作方法,其特征在于,所述基材的厚度为9微米至50微米之间。
6.一种扬声器,其特征在于,包括:磁系统、音圈和权利要求1-5任一项所述的类钻碳振动膜,所述音圈一端与所述类钻碳振动膜连接,所述音圈另一端插入所述磁系统产生的磁场内。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990002102A (ko) * 1997-06-19 1999-01-15 구자홍 스피커 진동판의 dlc 코팅 장치
JP2010115817A (ja) * 2008-11-12 2010-05-27 Seiko Epson Corp 静電アクチュエータ、液滴吐出ヘッド及びそれらの製造方法並びに液滴吐出装置
CN102560413A (zh) * 2010-12-13 2012-07-11 财团法人金属工业研究发展中心 类钻碳膜及其制作方法
CN204929219U (zh) * 2015-06-25 2015-12-30 东莞正任电子有限公司 一种耳机扬声器用新型振膜及具有该新型振膜的耳机扬声器
CN105263089A (zh) * 2014-05-27 2016-01-20 固昌通讯股份有限公司 振动元件
CN105937022A (zh) * 2015-03-05 2016-09-14 馗鼎奈米科技股份有限公司 类钻碳膜的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2868120B2 (ja) * 1997-06-11 1999-03-10 川崎重工業株式会社 電子ビーム励起プラズマ発生装置
TW455912B (en) * 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
WO2000063956A1 (fr) * 1999-04-20 2000-10-26 Sony Corporation Procede et dispositif pour realiser un depot de couches minces, et procede pour la production d'un dispositif a semiconducteur a couches minces
US7220687B2 (en) 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
KR101019065B1 (ko) 2010-06-23 2011-03-07 (주)제이 앤 엘 테크 나노 박막을 코팅한 대전방지 기능을 갖는, 전자부품 포장용 포장재 및 그 제조방법
CN101886252A (zh) 2010-08-06 2010-11-17 北京大学 一种在pc树脂镜片上沉积dlc薄膜的制备方法
US9328422B2 (en) 2013-03-06 2016-05-03 Corning Incorporated Crystallization and bleaching of diamond-like carbon and silicon oxynitride thin films
JP2017038030A (ja) * 2015-08-14 2017-02-16 株式会社ディスコ ウエーハの加工方法及び電子デバイス
DE102016200367B3 (de) 2016-01-14 2017-02-02 Hochschule Wismar Verfahren zum Herstellen einer dünnen Schicht aus porösem DLC, Verwendung einer PECVD-Anlage und mit porösem DLC beschichtetes Werkstück

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990002102A (ko) * 1997-06-19 1999-01-15 구자홍 스피커 진동판의 dlc 코팅 장치
JP2010115817A (ja) * 2008-11-12 2010-05-27 Seiko Epson Corp 静電アクチュエータ、液滴吐出ヘッド及びそれらの製造方法並びに液滴吐出装置
CN102560413A (zh) * 2010-12-13 2012-07-11 财团法人金属工业研究发展中心 类钻碳膜及其制作方法
CN105263089A (zh) * 2014-05-27 2016-01-20 固昌通讯股份有限公司 振动元件
CN105937022A (zh) * 2015-03-05 2016-09-14 馗鼎奈米科技股份有限公司 类钻碳膜的制造方法
CN204929219U (zh) * 2015-06-25 2015-12-30 东莞正任电子有限公司 一种耳机扬声器用新型振膜及具有该新型振膜的耳机扬声器

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