CN106992509A - A kind of laminated bus guide rod and suppressing method for being used to suppress VFTO - Google Patents

A kind of laminated bus guide rod and suppressing method for being used to suppress VFTO Download PDF

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CN106992509A
CN106992509A CN201710351741.8A CN201710351741A CN106992509A CN 106992509 A CN106992509 A CN 106992509A CN 201710351741 A CN201710351741 A CN 201710351741A CN 106992509 A CN106992509 A CN 106992509A
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vfto
resistance layer
layer
guide rod
bus guide
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CN106992509B (en
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王欢
王晓琪
项琼
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State Grid Corp of China SGCC
China Electric Power Research Institute Co Ltd CEPRI
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State Grid Corp of China SGCC
China Electric Power Research Institute Co Ltd CEPRI
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/042Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device

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Abstract

本发明公开了一种用于抑制VFTO的叠层式母线导杆,包括:内部电阻层、电感层和外部电阻层,所述内部电阻层,内侧为中心镂空区,外侧为电感层,与所述外部电阻层共同用于在特快瞬态过电压VFTO形成后,吸收行波能量,增加母线导杆的有功损耗,降低VFTO的幅值和频率;所述电感层,内侧为内部电阻层,外侧为外部电阻层,包括:磁环和高导介质,用于在工频条件下正常传输电流。本发明的有益效果在于:通过改变母线波阻抗的方式,增加该段母线杆的有功损耗,抑制行波的发展,从而达到降低VFTO的幅值和频率的目的,有助于提高一次设备的安全可靠运行,降低一次设备绝缘损坏风险,而且还将有助于二次检测设备的安全使用,提高电子式互感器等智能设备的可靠运行。

The invention discloses a laminated busbar guide rod for suppressing VFTO, which comprises: an internal resistance layer, an inductance layer and an external resistance layer. The internal resistance layer has a central hollow area on the inside and an inductance layer on the outside, which is the same as the internal resistance layer. The above-mentioned external resistance layers are commonly used to absorb traveling wave energy after the formation of the ultra-fast transient overvoltage VFTO, increase the active power loss of the busbar guide rod, and reduce the amplitude and frequency of the VFTO; the inside of the inductance layer is the internal resistance layer, and the outside It is an external resistance layer, including: a magnetic ring and a high-conductivity medium, which are used to transmit current normally under power frequency conditions. The beneficial effects of the present invention are: by changing the wave impedance of the bus bar, the active power loss of the section of the bus bar is increased, and the development of the traveling wave is suppressed, so as to achieve the purpose of reducing the amplitude and frequency of the VFTO, which helps to improve the safety of the primary equipment Reliable operation, reducing the risk of insulation damage to primary equipment, and will also help the safe use of secondary testing equipment, and improve the reliable operation of intelligent equipment such as electronic transformers.

Description

一种用于抑制VFTO的叠层式母线导杆及抑制方法A laminated bus bar guide rod and suppression method for suppressing VFTO

技术领域technical field

本发明涉及电网运维领域,并且更具体地,涉及一种用于抑制VFTO的叠层式母线导杆及抑制方法。The invention relates to the field of power grid operation and maintenance, and more specifically, to a laminated bus bar guide rod and a suppression method for suppressing VFTO.

背景技术Background technique

特快瞬态过电压VFTO(Very Fast Transient Over-voltages,VFTO)是指波前时间3到100ns内的瞬态过电压,主要因为气体绝缘组合电器GIS(Gas InsulatedSwitchgear,GIS)中的隔离开关的操作等因素引起。当操作GIS的隔离开关时,由于触头移动速度比较缓慢,引起了触头间的数次预计穿和重击穿。在合闸过程中,导致触头之间的电压降低,之后发生类似于重合闸的击穿,出现了电压幅值较高的VFTO。另外,在分闸过程中,同样由于触头移动速度慢,触头间发生重击穿,也会出现类似于重合闸的现场,所以也会导致出现电压幅值较高的VFTO。由于波前较陡,幅值较高,VFTO很有可能会对GIS、绕组设备和变压器以及二次设备造成损害。VFTO上限频率可达到5MHz至40MHz,对GIS内部绝缘支撑件、盆式绝缘子及其它部件产生危害,特别是对通过油气套管与GIS相连接的变压器、电抗器危害更大。随着GIS电压等级的升高,一次设备相对绝缘裕度越低,VFTO存在所产生危害风险就越大。此外,VFTO对二次系统的危害也很严重。智能电网的建设使得越来越多的模拟信号被数字化,让二次弱电系统前移至一次设备附近,同时一次设备附近还安装了大量的监测设备。运行时发现,隔离开关操作产生的过电压是导致二次故障最主要原因之一,特别是安装在一次设备附近的二次设备故障率很高。Very Fast Transient Over-voltage VFTO (Very Fast Transient Over-voltages, VFTO) refers to the transient overvoltage within the wave front time of 3 to 100ns, mainly due to the operation of the isolating switch in the gas insulated switchgear GIS (Gas Insulated Switchgear, GIS) and other factors. When operating the isolating switch of GIS, due to the slow moving speed of the contacts, several expected wear and heavy breakdowns between the contacts are caused. During the closing process, the voltage between the contacts decreases, and then a breakdown similar to reclosing occurs, and VFTO with a higher voltage amplitude appears. In addition, during the opening process, due to the slow moving speed of the contacts, re-breakdown occurs between the contacts, and a scene similar to reclosing will also occur, so VFTO with a higher voltage amplitude will also occur. Due to the steep wave front and high amplitude, VFTO is likely to cause damage to GIS, winding equipment, transformers and secondary equipment. The upper limit frequency of VFTO can reach 5MHz to 40MHz, which will cause harm to GIS internal insulation supports, basin insulators and other components, especially to transformers and reactors connected to GIS through oil and gas bushings. With the increase of GIS voltage level, the lower the relative insulation margin of primary equipment, the greater the risk of harm caused by the existence of VFTO. In addition, the harm of VFTO to the secondary system is also very serious. The construction of the smart grid has enabled more and more analog signals to be digitized, allowing the secondary weak current system to be moved closer to the primary equipment, and a large number of monitoring equipment are also installed near the primary equipment. During operation, it was found that the overvoltage generated by the operation of the isolating switch is one of the main causes of secondary faults, especially the secondary equipment installed near the primary equipment has a high failure rate.

作为智能电网一次设备的特征之一的电子式互感器故障高,往往发生在二次系统,包括前置电路、采集卡及数据处理单元,造成死机、乱码或损毁等。一个重要的影响因素就是隔离开关操作产生的电磁干扰造成的,包括隔离开关操作导致的一次设备接地端瞬间地电位升高。As one of the characteristics of the primary equipment of the smart grid, the failure of the electronic transformer is high, which often occurs in the secondary system, including the front circuit, the acquisition card and the data processing unit, resulting in crash, garbled code or damage. An important influencing factor is caused by the electromagnetic interference generated by the operation of the isolating switch, including the instantaneous ground potential rise of the primary equipment ground terminal caused by the operation of the isolating switch.

因此,需要一种母线导杆,以解决对VFTO进行抑制的问题。Therefore, a busbar guide rod is needed to solve the problem of suppressing VFTO.

发明内容Contents of the invention

本发明提供了一种用于抑制VFTO的叠层式母线导杆,以解决对VFTO进行抑制的问题。The invention provides a laminated busbar guide rod used for suppressing VFTO to solve the problem of suppressing VFTO.

为了解决上述问题,根据本发明的一个方面,提供了一种用于抑制特快瞬态过电压VFTO的叠层式母线导杆,所述叠层式母线导杆包括:内部电阻层、电感层和外部电阻层,In order to solve the above problems, according to one aspect of the present invention, a laminated busbar guide bar for suppressing ultra-fast transient overvoltage VFTO is provided, the laminated busbar guide bar includes: an internal resistance layer, an inductance layer and external resistive layer,

所述内部电阻层,内侧为中心镂空区,外侧为电感层,与所述外部电阻层共同用于在VFTO形成后,吸收行波能量,增加母线导杆的有功损耗,降低VFTO的幅值和频率;The internal resistance layer, the inner side is the central hollow area, and the outer side is the inductance layer, which is used together with the external resistance layer to absorb traveling wave energy after the VFTO is formed, increase the active loss of the busbar guide rod, and reduce the amplitude and frequency;

所述电感层,内侧为内部电阻层,外侧为外部电阻层,包括:磁环和高导介质,用于在工频条件下正常传输电流。The inductance layer has an internal resistance layer on the inside and an external resistance layer on the outside, including: a magnetic ring and a high-conductivity medium for normal transmission of current under power frequency conditions.

优选地,其中所述高导介质对称镶嵌在磁环中。Preferably, the high-conductivity medium is symmetrically embedded in the magnetic ring.

优选地,其中所述磁环为铁氧体材料,所述高导介质为氧化钼。Preferably, the magnetic ring is ferrite material, and the high conductivity medium is molybdenum oxide.

优选地,其中所述内部电阻层和外部电阻层均由无感阻尼电阻串联组成。Preferably, both the internal resistance layer and the external resistance layer are composed of non-inductive damping resistors connected in series.

优选地,其中所述无感阻尼电阻通过嵌件或弹簧片与导电杆管电气连接。Preferably, the non-inductive damping resistor is electrically connected to the conductive rod tube through an insert or a spring piece.

根据本发明的另一个方面,提供了一种抑制VFTO的方法,所述方法包括:According to another aspect of the present invention, a kind of method of suppressing VFTO is provided, said method comprises:

在工频条件下,通过电感层传输电流,所述电感层包括:高导介质和磁环;Under the condition of power frequency, the current is transmitted through the inductive layer, and the inductive layer includes: a high-conductivity medium and a magnetic ring;

在VFTO形成后,通过内部电阻层和外部电阻层吸收行波能量,增加母线导杆的有功损耗,降低VFTO的幅值和频率。After the VFTO is formed, the traveling wave energy is absorbed through the internal resistance layer and the external resistance layer, which increases the active power loss of the bus bar and reduces the amplitude and frequency of the VFTO.

优选地,其中所述高导介质对称镶嵌在磁环中。Preferably, the high-conductivity medium is symmetrically embedded in the magnetic ring.

优选地,其中所述磁环为铁氧体材料,所述高导介质为氧化钼。Preferably, the magnetic ring is ferrite material, and the high conductivity medium is molybdenum oxide.

优选地,所述内部电阻层和外部电阻层均由无感阻尼电阻串联组成。Preferably, both the internal resistance layer and the external resistance layer are composed of non-inductive damping resistors connected in series.

优选地,所述无感阻尼电阻通过嵌件或弹簧片与导电杆管电气连接。Preferably, the non-inductive damping resistor is electrically connected to the conductive rod tube through an insert or a spring piece.

本发明的有益效果在于:The beneficial effects of the present invention are:

本发明的技术方案设计了一种消耗电子流能量的叠成式母线导电杆,用以抑制VFTO,通过改变母线波阻抗的方式,增加该段母线杆的有功损耗,抑制行波的发展,从而达到降低VFTO的幅值和频率的目的,有助于提高一次设备的安全可靠运行,降低一次设备绝缘损坏风险,而且还将有助于二次检测设备的安全使用,提高电子式互感器等智能设备的可靠运行。同时,该设计不仅可以对现有GIS管道进行改造,对新型GIS管道设计起到指导作用,而且该设计原理可以应用于避雷器套管中用于减小雷电波对一次设备绝缘的损坏。The technical solution of the present invention designs a stacked bus bar conductive bar that consumes electron flow energy to suppress VFTO. By changing the wave impedance of the bus bar, the active power loss of the section of the bus bar is increased, and the development of traveling waves is suppressed, thereby Reaching the purpose of reducing the amplitude and frequency of VFTO will help to improve the safe and reliable operation of primary equipment, reduce the risk of insulation damage to primary equipment, and will also help the safe use of secondary detection equipment and improve the intelligence of electronic transformers. reliable operation of equipment. At the same time, the design can not only transform the existing GIS pipeline, but also play a guiding role in the design of the new GIS pipeline, and the design principle can be applied to the arrester bushing to reduce the damage of the lightning wave to the primary equipment insulation.

附图说明Description of drawings

通过参考下面的附图,可以更为完整地理解本发明的示例性实施方式:A more complete understanding of the exemplary embodiments of the present invention can be had by referring to the following drawings:

图1为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的俯视图;FIG. 1 is a top view of a laminated bus guide bar for suppressing VFTO according to an embodiment of the present invention;

图2为VFTO形成的原理图;Figure 2 is a schematic diagram of VFTO formation;

图3为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的正视图;Fig. 3 is a front view of a laminated busbar guide rod for suppressing VFTO according to an embodiment of the present invention;

图4为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的侧视图;以及4 is a side view of a laminated bus bar guide for VFTO suppression according to an embodiment of the present invention; and

图5为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的原理图;Fig. 5 is a schematic diagram of a laminated busbar guide rod for suppressing VFTO according to an embodiment of the present invention;

图6为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的等效电路图;Fig. 6 is an equivalent circuit diagram of a laminated bus guide bar for suppressing VFTO according to an embodiment of the present invention;

图7为根据本发明实施方式的抑制方法700的流程图。FIG. 7 is a flowchart of a suppression method 700 according to an embodiment of the present invention.

具体实施方式detailed description

现在参考附图介绍本发明的示例性实施方式,然而,本发明可以用许多不同的形式来实施,并且不局限于此处描述的实施例,提供这些实施例是为了详尽地且完全地公开本发明,并且向所属技术领域的技术人员充分传达本发明的范围。对于表示在附图中的示例性实施方式中的术语并不是对本发明的限定。在附图中,相同的单元/元件使用相同的附图标记。Exemplary embodiments of the present invention will now be described with reference to the drawings; however, the present invention may be embodied in many different forms and are not limited to the embodiments described herein, which are provided for the purpose of exhaustively and completely disclosing the present invention. invention and fully convey the scope of the invention to those skilled in the art. The terms used in the exemplary embodiments shown in the drawings do not limit the present invention. In the figures, the same units/elements are given the same reference numerals.

除非另有说明,此处使用的术语(包括科技术语)对所属技术领域的技术人员具有通常的理解含义。另外,可以理解的是,以通常使用的词典限定的术语,应当被理解为与其相关领域的语境具有一致的含义,而不应该被理解为理想化的或过于正式的意义。Unless otherwise specified, the terms (including scientific and technical terms) used herein have the commonly understood meanings to those skilled in the art. In addition, it can be understood that terms defined by commonly used dictionaries should be understood to have consistent meanings in the context of their related fields, and should not be understood as idealized or overly formal meanings.

图1为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的俯视图。如图1所示,所述用于抑制VFTO的叠层式母线导杆包括:中心镂空区1、磁环2、外部电阻层3、内部电阻层4和高导介质5,所述磁环和高导介质组成所述电感层。优选地,所述内部电阻层,内侧为中心镂空区,外侧为电感层,与所述外部电阻层共同用于在特快瞬态过电压VFTO形成后,吸收行波能量,增加母线导杆的有功损耗,降低VFTO的幅值和频率。FIG. 1 is a top view of a laminated bus bar guide for suppressing VFTO according to an embodiment of the present invention. As shown in Figure 1, the laminated bus bar guide rod for suppressing VFTO includes: a central hollow area 1, a magnetic ring 2, an external resistance layer 3, an internal resistance layer 4 and a high-conductivity medium 5, the magnetic ring and The high conductivity medium constitutes the inductance layer. Preferably, the internal resistive layer has a central hollow area on the inner side and an inductive layer on the outer side, and is used together with the external resistive layer to absorb traveling wave energy after the formation of the ultra-fast transient overvoltage VFTO and increase the active power of the busbar guide rod. Loss, reducing the amplitude and frequency of VFTO.

优选地,所述电感层,内侧为内部电阻层,外侧为外部电阻层,用于在工频条件下正常传输电流。优选地,所述高导介质对称镶嵌在磁环中。优选地,所述磁环为铁氧体材料,所述高导介质为氧化钼。优选地,所述内部电阻层和外部电阻层均由无感阻尼电阻串联组成,所述无感阻尼电阻通过嵌件或弹簧片与导电杆管电气连接。图2为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的正视图。图3为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的侧视图。Preferably, the inductive layer has an internal resistance layer on the inside and an external resistance layer on the outside, which are used for normal transmission of current under power frequency conditions. Preferably, the high-conductivity medium is symmetrically embedded in the magnetic ring. Preferably, the magnetic ring is ferrite material, and the high conductivity medium is molybdenum oxide. Preferably, both the internal resistance layer and the external resistance layer are composed of non-inductive damping resistors connected in series, and the non-inductive damping resistors are electrically connected to the conductive rod through inserts or spring sheets. 2 is a front view of a laminated bus bar guide for suppressing VFTO according to an embodiment of the present invention. 3 is a side view of a laminated bus bar guide for VFTO suppression according to an embodiment of the present invention.

图4为VFTO形成的原理图。如图4所示,为VFTO形成的原理图,GIS中有两段母线,波阻抗分别为Z1和Z2,分别带电荷G1和G2,当开关k合闸时,电荷G1和G2要重新在母线上分配。由于GIS中良好的绝缘性能,母线电荷重新分配过程中,能量损耗很微弱,产生行波在母线两端折反射形成幅值很高、频率达5至40MHz的快速陡波过电压,即VFTO形成。Figure 4 is a schematic diagram of VFTO formation. As shown in Figure 4, it is the schematic diagram formed by VFTO. There are two busbars in GIS, the wave impedances are Z1 and Z2, respectively, and the charges G1 and G2 are respectively charged. on distribution. Due to the good insulation performance in the GIS, the energy loss is very weak during the redistribution process of the busbar charge, and the traveling wave is refracted and reflected at both ends of the busbar to form a fast and steep overvoltage with a high amplitude and a frequency of 5 to 40MHz, that is, the formation of VFTO .

图5为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的原理图。如图5所示,在GIS中以叠层式母线导杆的形式改变一段母线导电杆的波阻抗,即电感L并联电阻R的形式,行波在残余电感段形成较高电压,其两端电阻在高电压作用下来吸收行波能量。磁环被切割成两个不完整半圆部分,在在两个半圆之间嵌入高导介质。与磁环特性一致,这种高导介质在工频条件下电阻值极小,随着频率的增加其感抗值极具越大,即电流在正常情况下通过这种高导介质传输,出现VFTO后由于其感抗过大,则进入阻抗较小的电阻棒内,由于其能量较小,因此被电阻棒吸收产生极小的有功损耗,则可以达到降低幅值和频率的作用。嵌入的高导介质与磁环材料不一样,两者的感抗变化幅值不同,一般情况下磁环为铁氧体材料,而高导介质采用氧化钼等材料,起到对普通磁环的改善作用。5 is a schematic diagram of a laminated bus bar guide for suppressing VFTO according to an embodiment of the present invention. As shown in Figure 5, in GIS, the wave impedance of a section of busbar conductive rod is changed in the form of laminated busbar guide rod, that is, the form of inductance L paralleled with resistance R, and the traveling wave forms a higher voltage in the residual inductance section, and its two ends Resistors absorb traveling wave energy under high voltage. The magnetic ring is cut into two incomplete semicircles, and a high-conductivity medium is embedded between the two semicircles. Consistent with the characteristics of the magnetic ring, the resistance value of this high-conductivity medium is extremely small under power frequency conditions, and its inductive reactance value is extremely large as the frequency increases, that is, the current is transmitted through this high-conductivity medium under normal conditions, and the After VFTO, because its inductive reactance is too large, it enters the resistance rod with small impedance. Because of its small energy, it is absorbed by the resistance rod to produce a very small active loss, which can reduce the amplitude and frequency. The embedded high-conductivity medium is different from the material of the magnetic ring, and the amplitude of the inductance change of the two is different. Generally, the magnetic ring is made of ferrite material, while the high-conductivity medium is made of molybdenum oxide and other materials. Improvement effect.

图6为根据本发明实施方式的用于抑制VFTO的叠层式母线导杆的等效电路图。如图6所示,叠层式母线导杆的感性物质L及电阻R是以分布参数元件实现的。L1代表磁环电感量;L2代表高导介质电感量;R1代表内部电阻棒电阻;R2代表外部电阻棒电阻。感性物质L增加了行波往返时间,即降低VFTO频率,同时提高电阻R端的电压,使得行波电荷流经R产生能耗。感性物质L及电阻R的参数根据抑制VFTO仿真计算结果而定。暂态过程计算,要考虑感性物质L的非线性。在本发明的实施方式中,R1电阻为10Ω,L2高导介质工频时电阻1Ω,随频率增加其阻抗呈递增趋势,当频率达到1MHz时呈现电阻值为100Ω。磁环为普通磁环,无特殊要求。根据仿真及实测结果可知,该设计方式下可将原GIS管道内的VFTO幅值吸收掉30%以上,其抑制VFTO的效果远优于目前的磁环。6 is an equivalent circuit diagram of a laminated bus guide bar for suppressing VFTO according to an embodiment of the present invention. As shown in Fig. 6, the inductive material L and the resistance R of the laminated busbar guide rod are realized by distributed parameter elements. L1 represents the inductance of the magnetic ring; L2 represents the inductance of the high-conductivity medium; R1 represents the resistance of the internal resistance rod; R2 represents the resistance of the external resistance rod. The inductive substance L increases the round-trip time of the traveling wave, that is, reduces the VFTO frequency, and at the same time increases the voltage at the R terminal of the resistor, so that the traveling wave charge flows through R to generate energy consumption. The parameters of the inductive substance L and the resistance R are determined according to the simulation calculation results of suppressing VFTO. In the calculation of the transient process, the nonlinearity of the perceptual substance L must be considered. In the embodiment of the present invention, the resistance of R1 is 10Ω, and the resistance of L2 is 1Ω at power frequency of the high-conductivity medium. As the frequency increases, the impedance shows an increasing trend, and when the frequency reaches 1MHz, the resistance value is 100Ω. The magnetic ring is an ordinary magnetic ring without special requirements. According to the simulation and actual measurement results, this design method can absorb more than 30% of the VFTO amplitude in the original GIS pipeline, and its effect of suppressing VFTO is far better than the current magnetic ring.

此外,本发明的高导介质加磁环的设计原理不仅可以用于GIS内对VFTO的吸收,也可以在避雷器套管中用于吸收雷电波,即套管内部导电杆采用高导介质加磁环加电阻的叠压时结构设计。In addition, the design principle of the high-conductivity medium plus magnetic ring of the present invention can not only be used to absorb VFTO in GIS, but also can be used to absorb lightning waves in the arrester bushing, that is, the conductive rod inside the bushing is magnetized with high-conductivity medium Structural design of ring-added resistors when stacked.

图7为根据本发明实施方式的抑制方法700的流程图。如图7所示,所述抑制方法700用于对VFTO进行抑制,所述方法700从步骤101处开始,在步骤701在工频条件下,通过电感层传输电流,所述电感层包括:高导介质和磁环。优选地,其中所述高导介质对称镶嵌在磁环中。优选地,其中所述磁环为铁氧体材料,所述高导介质为氧化钼。FIG. 7 is a flowchart of a suppression method 700 according to an embodiment of the present invention. As shown in FIG. 7 , the suppression method 700 is used to suppress VFTO. The method 700 starts from step 101. In step 701, under power frequency conditions, the current is transmitted through the inductance layer, and the inductance layer includes: high Conductive medium and magnetic ring. Preferably, the high-conductivity medium is symmetrically embedded in the magnetic ring. Preferably, the magnetic ring is ferrite material, and the high conductivity medium is molybdenum oxide.

优选地,在步骤702在VFTO形成后,通过内部电阻层和外部电阻层吸收行波能量,增加母线导杆的有功损耗,降低VFTO的幅值和频率。优选地,所述内部电阻层和外部电阻层均由无感阻尼电阻串联组成。优选地,所述无感阻尼电阻通过嵌件或弹簧片与导电杆管电气连接。Preferably, in step 702, after the VFTO is formed, the traveling wave energy is absorbed by the internal resistance layer and the external resistance layer, so as to increase the active power loss of the bus guide bar and reduce the amplitude and frequency of the VFTO. Preferably, both the internal resistance layer and the external resistance layer are composed of non-inductive damping resistors connected in series. Preferably, the non-inductive damping resistor is electrically connected to the conductive rod tube through an insert or a spring piece.

本发明的实施例的用于抑制VFTO的叠层式母线导杆与本发明的另一个实施例的VFTO抑制方法700相对应,在此不再赘述。The laminated busbar guide rod for suppressing VFTO in this embodiment of the present invention corresponds to the VFTO suppressing method 700 in another embodiment of the present invention, and will not be repeated here.

已经通过参考少量实施方式描述了本发明。然而,本领域技术人员所公知的,正如附带的专利权利要求所限定的,除了本发明以上公开的其他的实施例等同地落在本发明的范围内。The invention has been described with reference to a small number of embodiments. However, it is clear to a person skilled in the art that other embodiments than the invention disclosed above are equally within the scope of the invention, as defined by the appended patent claims.

通常地,在权利要求中使用的所有术语都根据他们在技术领域的通常含义被解释,除非在其中被另外明确地定义。所有的参考“一个/所述/该[装置、组件等]”都被开放地解释为所述装置、组件等中的至少一个实例,除非另外明确地说明。这里公开的任何方法的步骤都没必要以公开的准确的顺序运行,除非明确地说明。Generally, all terms used in the claims are to be interpreted according to their ordinary meaning in the technical field, unless explicitly defined otherwise therein. All references to "a/the/the [means, component, etc.]" are openly construed to mean at least one instance of said means, component, etc., unless expressly stated otherwise. The steps of any method disclosed herein do not have to be performed in the exact order disclosed, unless explicitly stated.

Claims (10)

1. a kind of laminated bus guide rod for being used to suppress VFTO, it is characterised in that the laminated bus guide rod includes:It is internal Resistive layer, inductor layer and external electrical resistance layer,
Vacancy section centered on the internal resistance layer, inner side, outside is inductor layer, is provided commonly for the external electrical resistance layer in spy After fast transient overvoltage VFTO is formed, traveling wave energy is absorbed, increases the active loss of bus guide rod, VFTO amplitude and frequency is reduced Rate;
The inductor layer, inner side is internal resistance layer, and outside is external electrical resistance layer, including:Magnet ring and height lead medium, in work Normal transmission electric current under the conditions of frequency.
2. bus guide rod according to claim 1, it is characterised in that the height is led medium and is symmetrically embedded in magnet ring.
3. bus guide rod according to claim 2, it is characterised in that the magnet ring is Ferrite Material, the height leads Jie Matter is molybdenum oxide.
4. bus guide rod according to claim 1, it is characterised in that the internal resistance layer and external electrical resistance layer are by nothing Sense damping resistance is composed in series.
5. bus guide rod according to claim 4, it is characterised in that the noninductive damping resistance passes through inserts or spring leaf It is electrically connected with conductive rod tube.
6. a kind of method for suppressing VFTO using bus guide rod as claimed in claim 1, it is characterised in that methods described bag Include:
Under the conditions of power frequency, electric current is transmitted by inductor layer, the inductor layer includes:Height leads medium and magnet ring;
After VFTO is formed, traveling wave energy is absorbed by internal resistance layer and external electrical resistance layer, increases the active damage of bus guide rod Consumption, reduces VFTO amplitude and frequency.
7. according to the method described in claim 1, it is characterised in that the height is led medium and is symmetrically embedded in magnet ring.
8. method according to claim 7, it is characterised in that the magnet ring is Ferrite Material, the height leads medium and is Molybdenum oxide.
9. method according to claim 6, it is characterised in that the internal resistance layer and external electrical resistance layer are by noninductive resistance Buffer resistance is composed in series.
10. method according to claim 9, it is characterised in that the noninductive damping resistance by inserts or spring leaf with Conductive rod tube electrical connection.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108305726A (en) * 2018-02-01 2018-07-20 清华大学 A kind of disc insulator and preparation method thereof inhibiting function with VFTO
CN109100620A (en) * 2018-06-08 2018-12-28 中国电力科学研究院有限公司 A kind of verify inhibits conducting wire to the system and method for GIS substation VFTO inhibitory effect
CN109672162A (en) * 2019-01-23 2019-04-23 平高集团有限公司 GIS device and its VFTO inhibit device
CN109888740A (en) * 2019-01-23 2019-06-14 平高集团有限公司 A VFTO suppression device and GIS equipment
CN113258492A (en) * 2021-07-07 2021-08-13 华中科技大学 Ultra-fast transient overvoltage suppression structure and gas insulated substation integrated equipment
CN115688661A (en) * 2022-12-30 2023-02-03 华中科技大学 A Modeling Method for the Whole Circuit Parameters of Helical Tubular Damping Bus for VFTO Suppression

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1553552A (en) * 2003-05-27 2004-12-08 李帮庆 Over voltage breaking protector
US20100246085A1 (en) * 2009-03-27 2010-09-30 Abb Technology Ag High-voltage device
CN201805224U (en) * 2010-09-30 2011-04-20 河北工程大学 GIS overvoltage protector
CN201975776U (en) * 2011-01-12 2011-09-14 福建省电力有限公司电力科学研究院 Device capable of reducing steepness of lightning intruding wave onto transformer
US20130063855A1 (en) * 2010-05-24 2013-03-14 Dariusz Smugala Very fast transient suppressing device
CN103236684A (en) * 2013-04-17 2013-08-07 清华大学 High-frequency magnet ring device for restraining very fast transient overvoltage
CN103258094A (en) * 2013-05-10 2013-08-21 清华大学 Method of optimizing high-frequency magnetic rings used for restraining very fast transient overvoltage
EP2747094A1 (en) * 2012-12-21 2014-06-25 ABB Technology AG Very fast transient overvoltage attenuator
CN205178498U (en) * 2015-11-27 2016-04-20 云南电网有限责任公司电力科学研究院 Quick transient state overvoltage suppressing device of superhigh pressure GIS
CN205264589U (en) * 2015-12-08 2016-05-25 新东北电气集团超高压有限公司 Restrain device that isolator operation produced VFTO
CN106486991A (en) * 2015-08-27 2017-03-08 中国电力科学研究院 A kind of damping bus for suppressing VFTO

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1553552A (en) * 2003-05-27 2004-12-08 李帮庆 Over voltage breaking protector
US20100246085A1 (en) * 2009-03-27 2010-09-30 Abb Technology Ag High-voltage device
US20130063855A1 (en) * 2010-05-24 2013-03-14 Dariusz Smugala Very fast transient suppressing device
CN201805224U (en) * 2010-09-30 2011-04-20 河北工程大学 GIS overvoltage protector
CN201975776U (en) * 2011-01-12 2011-09-14 福建省电力有限公司电力科学研究院 Device capable of reducing steepness of lightning intruding wave onto transformer
EP2747094A1 (en) * 2012-12-21 2014-06-25 ABB Technology AG Very fast transient overvoltage attenuator
CN103236684A (en) * 2013-04-17 2013-08-07 清华大学 High-frequency magnet ring device for restraining very fast transient overvoltage
CN103258094A (en) * 2013-05-10 2013-08-21 清华大学 Method of optimizing high-frequency magnetic rings used for restraining very fast transient overvoltage
CN106486991A (en) * 2015-08-27 2017-03-08 中国电力科学研究院 A kind of damping bus for suppressing VFTO
CN205178498U (en) * 2015-11-27 2016-04-20 云南电网有限责任公司电力科学研究院 Quick transient state overvoltage suppressing device of superhigh pressure GIS
CN205264589U (en) * 2015-12-08 2016-05-25 新东北电气集团超高压有限公司 Restrain device that isolator operation produced VFTO

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108305726A (en) * 2018-02-01 2018-07-20 清华大学 A kind of disc insulator and preparation method thereof inhibiting function with VFTO
CN109100620A (en) * 2018-06-08 2018-12-28 中国电力科学研究院有限公司 A kind of verify inhibits conducting wire to the system and method for GIS substation VFTO inhibitory effect
CN109100620B (en) * 2018-06-08 2022-04-22 中国电力科学研究院有限公司 System and method for verifying suppression effect of suppression guide wire on VFTO of GIS transformer substation
CN109672162A (en) * 2019-01-23 2019-04-23 平高集团有限公司 GIS device and its VFTO inhibit device
CN109888740A (en) * 2019-01-23 2019-06-14 平高集团有限公司 A VFTO suppression device and GIS equipment
CN109672162B (en) * 2019-01-23 2021-02-23 平高集团有限公司 GIS equipment and VFTO suppression device thereof
CN113258492A (en) * 2021-07-07 2021-08-13 华中科技大学 Ultra-fast transient overvoltage suppression structure and gas insulated substation integrated equipment
CN115688661A (en) * 2022-12-30 2023-02-03 华中科技大学 A Modeling Method for the Whole Circuit Parameters of Helical Tubular Damping Bus for VFTO Suppression
CN115688661B (en) * 2022-12-30 2023-03-31 华中科技大学 Modeling method for full circuit parameters of spiral tube type damping bus for VFTO (very fast transient overvoltage) suppression

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