CN106981457A - Method used for shielding high density packaging electromagnetic interference of integrated circuit, and laser processing equipment - Google Patents

Method used for shielding high density packaging electromagnetic interference of integrated circuit, and laser processing equipment Download PDF

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Publication number
CN106981457A
CN106981457A CN201710076564.7A CN201710076564A CN106981457A CN 106981457 A CN106981457 A CN 106981457A CN 201710076564 A CN201710076564 A CN 201710076564A CN 106981457 A CN106981457 A CN 106981457A
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electromagnetic interference
integrated circuit
metal
laser
integrated module
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CN201710076564.7A
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Chinese (zh)
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熊政军
陈涛
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武汉澳谱激光科技有限公司
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Publication of CN106981457A publication Critical patent/CN106981457A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • B23K26/032Observing, e.g. monitoring, the workpiece using optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Abstract

The invention relates to a method used for shielding high density packaging electromagnetic interference of an integrated circuit, and laser processing equipment. The method specifically comprises steps that an integrated module is arranged on a three-dimensional work table of the laser processing equipment, an automatic positioning function of a charge coupled device image sensor (CCD) is utilized to search a preset reference point on a printed circuit board, and a prefabricated grounding metal belt on the printed circuit board is found out. Slotting along the grounding metal belt on a packaging body of the integrated module is automatically carried out by the laser processing equipment to expose the metal belt; a metal material is injected into a micro slot, e.g., silver slurry, after solidification of the metal material, a metal wall is formed, vacuum metal film sputtering above the integrated module is then carried out, and the circuit of the whole integrated module is enclosed. The method is advantaged in that a high integration degree and micromation of the integrated module are guaranteed, and the economic benefit is obvious.

Description

用于屏蔽集成电路高密度封装电磁干扰方法及激光加工设备 The integrated circuit for shielding of electromagnetic interference high-density packaging method and a laser machining apparatus

技术领域 FIELD

[0001] 本发明涉及集成电路封装后对电磁干扰进行屏蔽方法及设备,尤其涉及一种用于屏蔽高密度集成电路封装内电磁干扰的方法及实现此方法的激光加工设备。 [0001] The present invention relates to an integrated circuit package after the electromagnetic interference shielding apparatus and method, particularly to a method for shielding high-density integrated circuit package EMI implementation of this method and laser processing apparatus.

背景技术 Background technique

[0002] 智能设备的轻薄化已经是毋庸置疑的大趋势,有利于这一趋势的微型化模组则具有很大的发展潜力。 Light and thin [0002] smart devices already is no doubt the trend, a trend that is conducive to miniaturization of the module has great potential for development. 高密度集成电路封装,如系统级封装(SIP),是将多个具有不同功能的主动元件与被动元件,以及诸如微机电系统、光学元件等集成在同一个封装内,从而实现一个可提供多种功能的系统,是设计与制造微型化模组的关键技术。 High-density integrated circuit package, system in package (the SIP), a plurality of active elements and passive elements having different functions, and a micro-electromechanical systems, other optical elements such as integrated in the same package, may be provided to achieve a multi- functions of the system, is the key to the design and manufacture of miniaturized technology module. SIP的特点除了提高集成度外,还可以把射频RF等无法集成的功能原件封装在一起。 SIP features in addition to higher integration givers, an original function can not be integrated in the radio frequency RF, etc. packaged together. 这种高密度的封装技术使产品设计弹性大、开发时间短及成本低,可以使元件采购简化,并改善终端产品的制造效率。 This technology enables high-density packaging product design flexibility, low cost and the development time is short, can simplify purchasing element, improving manufacturing efficiency and end product.

[0003] 这些高密度集成电路封装的缺点是天线、RF等器件释放较强的电磁干扰,严重影响封装体内的其它元件的工作。 [0003] These disadvantages of high density integrated circuit package is an antenna, RF, etc. released strong electromagnetic interference devices, seriously affect the other elements within the package. 随着封装密度的越来越高,元件之间的距离越来越近,电磁千扰会越来越严重。 As the distance between the higher and higher packing density, elements closer, one thousand electromagnetic interference will become increasingly serious. 因此,必须采取有效措施,阻止电磁泄露或引入抗干扰封装,以免相邻元件间的电磁干扰而影响器件或模组的正常工作。 Therefore, effective measures must be taken to prevent leakage of electromagnetic interference, or package is introduced, so as not to affect the normal operation of the device or module electromagnetic interference between adjacent elements.

发明内容 SUMMARY

[0004] 本发明的目的是为了解决高密度集成电路封装内器件之间存在的电磁干扰问题, 提供一种用于屏蔽集成电路高密度封装电磁干扰的方法及其实现这种方法的激光加工设备。 [0004] The object of the present invention is to solve the problem of electromagnetic interference between the high density integrated circuit packaging device, there is provided a method of shielding electromagnetic interference high-density packaging an integrated circuit for a laser machining apparatus and realize this method .

[0005] 本发明的目的通过以下技术方案来实现: [0005] The object of the present invention is achieved by the following technical solutions:

[0006] 用于屏蔽集成电路高密度封装电磁干扰方法,按以下步骤进行:在集成电路进行封装之前,先在用于封装的基板即印刷电路板上预制接地金属带,且金属带的位置位于产生电磁干扰器件的四周,即在印刷电路板上形成该电磁干扰器件的接地隔离电路;同时,在预制接地金属带的印刷电路板上预设若干参考点,便于在后续制造工艺过程中自动寻找接地隔离电路;所有器件按常用方法进行贴装在印刷电路板上,然后封装,从而形成能实现各种功能的集成模块;且集成模块的封装体为注塑材料,其特征在于:找到预制接地金属带的印刷电路板上预设的参考点,在集成模块的封装体上沿接地金属带开槽,将金属带裸露出来,在所开的槽内灌注金属材料,金属材料固化后形成金属墙,再在集成模块上方进行真空濺镀金属膜,将整个集成模块的电路封闭起来。 [0006] A method for shielding electromagnetic interference high-density packaging an integrated circuit, perform the following steps: before the integrated circuit package, the first package is located at a position of the substrate, i.e. a printed circuit board ground prefabricated metal strip and the metal strip four weeks electromagnetic interference devices, i.e., a ground isolation circuit device of the electromagnetic interference the printed circuit board; the same time, a predetermined number of reference points on the printed circuit board ground prefabricated metal strip facilitates automatically find the subsequent manufacturing process ground isolation circuit; all devices by conventional method for mounting the printed circuit board, then packaged to form an integrated module can realize various functions; integrated module package and injection molded material, wherein: a grounded metal preform found a printed circuit board with a predetermined reference point in the integrated module of the package along the slotted ground metal, expose the metal strip, a metal material filling the slot opening, is formed of a metal material after curing metal wall, then vacuum sputtered metal film, the entire integrated circuit modules closed up over the integrated module.

[0007] 所述的注塑材料为环氧树脂。 Molding material according to [0007] an epoxy resin.

[0008] 所述的金属带为铜带。 [0008] The metal strip is copper tape.

[0009] 所述槽的长度大于相邻两器件长度或宽度,槽宽度小于50um。 [0009] The length of the slot is greater than the length or width of the two adjacent devices, the groove width of less than 50um.

[0010] 所述灌注金属材料为银浆。 [0010] The filling material is metallic silver.

[0011] 用于屏蔽集成电路高密度封装电磁干扰的激光加工设备,包括电脑、激光器、第一光学透镜、分光镜、激光束运动控制器、第二光学透镜、三维工作台、第三光学透镜、电荷藕合器件图像传感器CCD,其特征在于:电脑控制激光器和三维工作台,激光器发出的激光依次经过第一光学透镜、分光镜、激光束运动控制器、第二光学透镜到达固定在三维工作台上的集成模块上;照射在集成模块上照明光反射后经第二光学透镜、激光束运动控制器、分光镜、第三光学透镜在电荷藕合器件图像传感器CCD上成像。 [0011] high-density packaging of integrated circuits for shielding electromagnetic interference laser processing apparatus, including a computer, a laser, a first optical lens, a beam splitter, movement of the laser beam controller, a second optical lens, a three-dimensional stage, a third optical lens , charge coupled device image sensor CCD, boosts comprising: computer-controlled stage and three-dimensional laser, the laser emitted by the laser passes through the first optical lens, a beam splitter, movement of the laser beam controller, is fixed the second optical lens to work in three dimensions the integrated module stage; irradiated on the integrated module after reflection of the illumination light through the second optical lens, a laser beam motion controller, a beam splitter, a third optical lens imaged onto charge coupled device image sensor CCD.

[0012] 本发明的激光加工设备还包括照明光源,照明光源的光照射在集成模块上。 [0012] The laser processing apparatus of the present invention further comprises a light source, irradiating the illumination light source lighting integrated module.

[0013] 所述的照明光源为红光或蓝光。 [0013] The illuminating light source is red or blue.

[0014] 所述的照明光源为CCD敏感波长的光。 [0014] The illumination light source is a wavelength-sensitive CCD.

[0015] 本发明具体为:把集成模块置于激光加工设备的三维工作台上,利用电荷藕合器件图像传感器CCD自动定位功能找到印刷电路板上已预设的参考点,进而找到印刷电路板上预制的接地金属带。 [0015] The present invention is specifically as follows: the integrated module is placed in a three-dimensional laser machining apparatus work table, using charge coupled device image sensor CCD automatic positioning function finds the printed circuit board preset reference point, and thus find the printed circuit board preformed metal strip on the ground. 激光加工设备自动在集成模块的封装体上沿接地金属带开槽,将金属带裸露出来。 The laser processing apparatus automatically slotted metal strip along the ground on the package body integrated module, expose the metal strip. 在所开微槽内灌注金属材料,如银浆,固化该金属材料后形成金属墙,再在该集成模块的上方进行真空漉镀金属膜,将整个集成模块的电路封闭起来。 In the opened filling microchannels metallic material such as silver paste, a metal material formed after curing the metal wall, and then subjected to vacuum above the glistening plated metal film integrated module, the entire integrated circuit modules closed up.

[0016] 经过上述工艺过程,集成模块的上面覆盖了金属膜层,通过金属墙与接地金属带连接,形成三维密闭的隔离结构,从而达到了电磁屏蔽的目的。 [0016] Through the above process, the above integrated module cover metal film layer with the metal wall and connected by a grounded metal, forming a three-dimensional closed isolation structure, so as to achieve the purpose of electromagnetic shielding. 用这种方法,不仅可以屏蔽集成模块内器件之间的电磁干扰,还可以隔离周边环境的电磁干扰对整个集成模块的影响,提高集成模块工作的稳定性与可靠性。 In this way, not only can shield electromagnetic interference between devices in an integrated module, it may further isolate the effect of electromagnetic interference of the surrounding environment of the whole integrated module, to improve the stability and reliability of the integrated module operation.

[0017]要实现本发明提出的用于屏蔽集成电路封装内电磁干扰的方法,开槽的工艺是关键技术之一。 [0017] A method for a integrated circuit package for shielding electromagnetic interference achieved by the present invention, the process is one of the key technologies slotted. 一般,在一个高密度的集成模块内,如系统级封装(SIP),器件与器件之间的距离在0.2ram左右,开槽的深度达1mm。 In general, in the integrated module of a high density, the distance between the system in package (the SIP), from device to device around 0.2ram, grooved depth of 1mm. 而开槽宽度小于50um,且槽的轨迹(即印刷电路板上预制接地金属带)往往是曲线的,这就决定了传统的机械方法是比较困难加工此槽的,而激光的柔性加工特性则能很好地解决此问题。 Less than 50um and the width of the slot, and a groove track (i.e., the printed circuit board with a grounded metal preform) often is a graph, which determines the traditional mechanical processing method is more difficult in this groove, and the flexible nature of the laser process is You can solve this problem. 此外,为了不影响槽周边器件的功能,在加工槽时要求控制热效应区小于lOOum。 Further, in order not to affect the function of the peripheral device slot, the slot in the processing zone is less than the thermal effect required control lOOum. 这往往需要激光器工作在UV波段,或者能发射超快激光脉冲,如皮秒或飞秒量级的。 This often requires laser operating in the UV band, or ultrafast laser capable of emitting pulses, such as femtosecond or picosecond.

[0018]本发明能产生的有益效果是显著的。 [0018] Advantageous effects of the present invention is capable of producing significant. 首先,它首次提供了一种用于有效屏蔽集成电路封装体内电磁干扰的方法及其实现这种方法的激光加工设备,也为集成模块的高集成度与微型化扫清了障碍。 First, it provides the first method for efficiently shielding electromagnetic interference within the integrated circuit package and achieve laser machining apparatus of this approach, also cleared the way for high integration and miniaturization of the integrated module. 在经济效益上,效果也是显著的。 On the economic benefits, the effect is significant. 举例来说,采用本发明提供的方法与设备,完成一个SIP微型化模块电磁隔离的时间为30秒,这样,一套这样的成套设备,年加工能力为720,000个模块。 For example, using the method and apparatus provided by the present invention, a complete SIP module miniaturized electromagnetic isolation time is 30 seconds, so that the set of such equipment, the processing capacity of 720,000 modules. 以智能穿戴设备(如某智能手表)为例,如果年销量是丨亿个,则需要该隔离设备为140套,按每套1〇〇万美金计算,年产值为近1〇亿人民币。 Smart wearable device (such as a smart watch), for example, if the annual sales is Shu one hundred million, you need to isolate the 140 sets of equipment, according to each 1〇〇 million dollars, with an annual output value of nearly 1〇 200 million yuan. 可以预料的是, 未来智能穿戴设备的需求量远不止1亿台,可想而知,该项目的经济效益是十分显著的。 It is anticipated that the future of smart wearable devices demand far more than 100 million units, can be imagined, the economic benefits of the project is very significant.

附图说明 BRIEF DESCRIPTION

[0019]图1为发明所指集成模块包括有很强电磁干扰的器件4的示意图。 [0019] The invention is referred to as an integrated module 1 comprises a schematic diagram of FIG strong electromagnetic interference device 4.

[0020]图2为发明所指集成模块包括屏蔽器件41和42的接地隔离电路6示意图。 [0020] FIG. 2 is referred to in the invention includes a shielding device integrated module 41 and ground isolation circuit 42 6. FIG.

[0021]图3为发明所指集成模块包括位于器件32与42之间的激光切槽61的集成模块示意图。 [0021] FIG. 3 is an integrated module comprising a slot 61 between the laser 32 and the integrated module 42 is a schematic view of the device of the invention referred to.

[0022]图4为发明所指集成模块的包括位于器件32与42之间的金属隔离槽62集成模块示意图。 [0022] FIG. 4 is referred to in the invention comprises a schematic diagram of an integrated module integrated module 62 is located between the metal separator 32 and grooves 42 device.

[0023]图5为发明所指集成模块的激光加工设备示意图。 [0023] FIG. 5 is a schematic view of the invention referred to laser processing equipment integrated module.

具体实施方式 Detailed ways

[0024]简化情况下,本发明所指集成模块如图1所示,包括一个印刷电路基板1,器件3和另一器件4,连接另一器件4与基板1的引线5,以及封装体2,器件3与另一器件4都可以是有电磁辐射的干扰源,但为了方便说明且不失一般性,我们假设器件3是没有电磁干扰的器件,而另一器件4有电磁干扰,需要进行屏蔽,也就是在器件3与另一器件4之间要进行电磁隔尚。 The [0024] simplification, the present invention is referred to an integrated module 1, comprising a printed circuit board 1, device 3 and the other devices 4, 4 is connected to another device substrate 1 and the lead 5, and the package 2 the device 3 device 4 with another source of interference may be electromagnetic radiation, for convenience of illustration and without loss of generality, we assume that the device 3 is no electromagnetic interference devices, and other electromagnetic interference device 4, the need for shielding, i.e. between the device 3 and 4 for the other electromagnetic device is still separated. 为了达到隔离的目的,根据本发明,在集成电路进行封装之前,先在用于封装的基板即印刷电路板上预制接地金属带,如图2、图3所示的位于器件(31、32、33)与器件(41、42)之间的金属带6,金属带6的设计必须是在集成模块使用时处于接地状态,且金属带6为铜带。 For the purpose of isolation, according to the present invention, before the integrated circuit package for encapsulating the first substrate, i.e. a printed circuit board ground prefabricated metal strip, FIG. 2, FIG. 3 is located in the device (shown in FIG. 31, between metal 33) and means (41, 42) with 6, 6 of the metal strip must be designed to be at the ground state when the integrated module, and the metal is copper tape strip 6. [0025] 用激光加工的方法,在集成模块水平方向沿着金属带6进行刻槽,槽的深度要达到金属带6的表面,使金属带6表面完全暴露出来,但是同时需要严格控制激光加工参数,保证激光能量不伤到金属带6。 [0025] The laser processing method, an integrated module in a horizontal direction along the metal belt groove 6, the depth of the groove to reach the surface of the metal strip 6, the surface of the metal strip 6 is completely exposed, but also need to strictly control the laser processing parameters, to ensure that the laser energy to the metal belt 6 does not hurt. 图3是图2的剖面图,包括了位于器件32与器件42之间的激光切槽61〇 3 is a sectional view of FIG. 2, it includes a laser 61〇 slot 42 is located between the device and the device 32

[0026] 在激光切槽61内用常用的方法灌注金属材料,为了达到有高隔离度(一般大于30dB)的屏蔽效果,灌注的金属材料一般是浆状的,为银浆,使槽内充分充满金属材料。 [0026] the slots 61 in the laser perfusion metallic material commonly used method, in order to achieve a shielding effect high isolation (generally greater than 30dB), the filling material is typically a metal paste, the silver paste, the vessel was fully full metal material. 浆状金属材料固化后,形成如图4所示的金属墙62,并用常用的工艺,如真空派镀等方法,在封装体2上面镀上金属膜63,金属膜为铜膜。 After the metal paste material is cured to form a metal wall 62 as shown in FIG. 4, and by conventional processes, such as vacuum plating method such as pie, a metal plating film 63, a metal film was formed on a copper film package 2. 金属墙62必须与印刷电路基板1的金属带6及封装体2上表面的金属膜63有良好的电接触。 The metal film 63 be a metal wall 62 with the upper surface 6 and the package 2 with the metal printed circuit board 1 has a good electrical contact.

[0027] —般情况下,金属带6、金属墙62及金属膜63的材料分别是铜、银及铜。 [0027] - Under normal circumstances, the metal strip 6, the metal material of the metal film 63 and the wall 62 respectively of copper, silver and copper. 但它们可以是任何其它金属或电导材料。 They may be any other metallic or conductive material.

[0028]图3中的激光切槽61由图5所示的激光加工系统完成。 In [0028] FIG. 3 laser grooving laser processing system 61 shown in FIG. 5 is completed. 激光器72发出的激光脉冲, 经过第一光学透镜81、激光束运动控制器83及第二光学透镜84后会聚在集成模块21的表面。 Laser pulse emitted from the laser 72, after the first optical lens 81, the motion controller 83 of the laser beam and a second optical lens 84 converges the surface of the integrated module 21. 集成模块21的表面经过第二光学透镜84、激光束运动控制器83、分光镜82及第三光学透镜85后成像在电荷藕合器件图像传感器CCD73上。 The surface of the integrated module 21 through the second optical lens 84, the laser beam motion controller 83, dichroic mirror 82 and the third optical lens 85 is imaged on the charge coupled device image sensor CCD73. 第一光学透镜81、激光束运动控制器83及第二光学透镜84设计及放置以致使激光束被聚焦在集成模块21的表面的同时,并能使集成模块21的表面能清晰地成像在电荷藕合器件图像传感器CCD 73上。 First optical lens 81, the motion controller 83 of the laser beam and a second optical lens 84 and designed to be placed so that the laser beam is focused at the same surface of the integrated module 21, and enables the integrated module surface 21 can be clearly imaged in the charge coupled device CCD image sensor 73. 为了增加本设备的抗环境散射光能力,一般还在集成模块21上表面加入照明光源75,照明光源75根据集成模块21 表面特性可选用红光或蓝光,也可以选用CCD 73敏感波长的光。 To increase the capacity of the anti-environmental light scatter apparatus, generally also added on the surface of the integrated module light illumination light source 75, illumination source 75 can be selected according to the red or blue surface feature integration modules 21, 73 may also use a wavelength sensitive to the CCD 21. 分光镜82—方面让激光器72发出的激光脉冲几乎无损地通过,另一方面则尽可能地反射集成模块21表面的照明光。 So that the laser beam splitter 72 82- aspect emitted laser pulse almost without loss by the other hand, the reflected light illumination surface of the integrated module 21 as possible. 集成模块21的空间运动由电脑71控制以及三维工作台74执行。 Integrated module 21 is performed by the spatial movement of the control computer 71 and three-dimensional table 74. 激光器72发出脉冲的时间以及集成模块21的运动轨迹由事先输入电脑71的集成模块21的设计信息决定。 Laser 72 and emits a pulse time of the integrated module 21 is determined by the trajectory previously entered the computer 71 integrated module 21 design information.

[0029] 激光器72发出激光脉冲的波长一般为紫外或者绿光波段,但在超短脉冲情况下, 如皮秒或者飞秒,则可以是近红外。 [0029] The wavelength of the laser 72 emitted laser pulse is typically an ultraviolet or green band, but in the case of ultrashort pulses, picosecond or femtosecond such, it may be a near-infrared. 激光束运动控制器83具有旋切或者螺旋运动功能或者动态聚焦功能,可使图3中的激光切槽61的槽壁垂直而光滑。 A laser beam controller 83 having a peeling motion or a helical motion function or a function of the dynamic focusing, the laser can cut grooves in the groove 61 in FIG. 3 and smooth vertical wall.

Claims (9)

1. 用于屏蔽集成电路高密度封装电磁干扰方法,按以下步骤进行:在集成电路进行封装之前,先在用于封装的基板即印刷电路板上预制接地金属带,且金属带的位置位于产生电磁干扰器件的四周,即在印刷电路板上形成该电磁干扰器件的接地隔离电路;同时,在预制接地金属带的印刷电路板上预设若干参考点;所有器件按常用方法进行贴装在印刷电路板上,然后封装,从而形成能实现各种功能的集成模块;且集成模块的封装体为注塑材料, 其特征在于:找到预制接地金属带的印刷电路板上预设的参考点,在集成模块的封装体上沿接地金属带开槽,将金属带裸露出来,在所开的槽内灌注金属材料,金属材料固化后形成金属墙,再在集成模块上方进行真空溅镀金属膜,将整个集成模块的电路封闭起来。 1. A method of shielding electromagnetic interference high-density packaging an integrated circuit, perform the following steps: before the integrated circuit package, the first package is located at a position of the substrate, i.e. a printed circuit board ground prefabricated metal strip and the metal strip produced four weeks electromagnetic interference devices, i.e., a ground isolation circuit device of the electromagnetic interference the printed circuit board; the same time, a predetermined number of reference points on the printed circuit board with a grounded metal preform; all devices be mounted in the usual way printing the circuit board and then packaged to form an integrated module can realize various functions; integrated module package and injection molded material, wherein: the printed circuit board found grounded metal preform with a preset reference point, the integration along the ground on the package body module slotted metal strip, the metal strip exposed out of a metal material filling the slot opening, is formed after the metal wall metal material is cured, and then vacuum sputtered metal film over the integrated module, the entire integrated circuit modules closed up.
2. 根据权利要求1所述的用于屏蔽集成电路高密度封装电磁干扰方法,其特征在于:所述的注塑材料为环氧树脂。 The high-density integrated circuit packaging for shielding electromagnetic interference method according to claim 1, wherein: the molding material is an epoxy resin.
3. 根据权利要求1所述的用于屏蔽集成电路高密度封装电磁干扰方法,其特征在于:所述的金属带为铜带。 The high-density integrated circuit packaging for shielding electromagnetic interference method according to claim 1, wherein: said copper strip is a metal strip.
4. 根据权利要求1所述的用于屏蔽集成电路高密度封装电磁干扰方法,其特征在于:所述槽的长度大于相邻两器件长度或宽度,槽宽度小于5〇um。 The high-density integrated circuit packaging shield electromagnetic interference for the method as claimed in claim 1, wherein: the length of the slot is greater than the length or width of the two adjacent devices, the groove width is smaller than 5〇um.
5. 根据权利要求1所述的用于屏蔽集成电路高密度封装电磁干扰方法,其特征在于:所述灌注金属材料为银浆。 The high-density integrated circuit packaging for shielding electromagnetic interference method according to claim 1, wherein: said filling metallic material is silver.
6. 用于屏蔽集成电路高密度封装电磁干扰的激光加工设备,包括电脑、激光器、第一光学透镜、分光镜、激光束运动控制器、第二光学透镜、三维工作台、第三光学透镜、电荷藕合器件图像传感器CCD,其特征在于:电脑控制激光器和三维工作台,激光器发出的激光依次经过第一光学透镜、分光镜、激光束运动控制器、第二光学透镜到达固定在三维工作台上的集成模块上;照射在集成模块上照明光反射后经第二光学透镜、激光束运动控制器、分光镜、第三光学透镜在电荷藕合器件图像传感器CCD上成像。 6. A high-density integrated circuit packaging shielding electromagnetic interference laser processing apparatus, including a computer, a laser, a first optical lens, a beam splitter, movement of the laser beam controller, a second optical lens, a three-dimensional stage, a third optical lens, charge coupled device image sensor CCD, boosts comprising: computer-controlled stage and three-dimensional laser, the laser emitted by the laser passes through the first optical lens, a beam splitter, movement of the laser beam controller, the second optical lens to the fixed table D on the integrated module; irradiated on the integrated module after reflection of the illumination light through the second optical lens, a laser beam motion controller, a beam splitter, a third optical lens imaged onto charge coupled device image sensor CCD.
7. 根据权利要求6所述的用于屏蔽集成电路高密度封装电磁干扰的激光加工设备,其特征在于:还包括照明光源,照明光源的光照射在集成模块上。 7. The integrated circuit according to claim shielding electromagnetic interference high-density packaging of a laser processing apparatus of claim 6, characterized in that: further comprising a lighting source illumination, the illumination light source is integrated module.
8. 根据权利要求7所述的用于屏蔽集成电路高密度封装电磁干扰的激光加工设备,其特征在于:所述的照明光源为红光或蓝光。 8. The integrated circuit as claimed in claim for shielding electromagnetic interference high-density packaging of a laser processing apparatus of claim 7, wherein: said illuminating light source is red or blue.
9. 根据权利要求7所述的用于屏蔽集成电路高密度封装电磁干扰的激光加工设备,其特征在于:所述的照明光源为CCD敏感波长的光。 9. The integrated circuit according to claim shielding electromagnetic interference high-density packaging of a laser processing apparatus of claim 7, wherein: said illumination light source is a wavelength-sensitive CCD.
CN201710076564.7A 2017-02-13 2017-02-13 Method used for shielding high density packaging electromagnetic interference of integrated circuit, and laser processing equipment CN106981457A (en)

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