CN106976837A - Microheater and its processing method - Google Patents
Microheater and its processing method Download PDFInfo
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- CN106976837A CN106976837A CN201710272620.4A CN201710272620A CN106976837A CN 106976837 A CN106976837 A CN 106976837A CN 201710272620 A CN201710272620 A CN 201710272620A CN 106976837 A CN106976837 A CN 106976837A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
Abstract
The invention discloses a kind of microheater and its processing method, the microheater includes：Substrate, support membrane, heating member and encapsulating shell.Substrate has the first surface and second surface being oppositely arranged along its thickness direction, substrate is provided with runs through its heat-insulated through hole in thickness direction, and heat-insulated through hole and extraneous ventilation device are communicated with substrate, support membrane is located on the first surface of substrate and covers the first end of heat-insulated through hole, heating member is located on the surface of remote heat-insulated through hole of support membrane, and encapsulating shell is located on the second surface of substrate and covers the second end of heat-insulated through hole.According to the microheater of the present invention, heat-insulated through hole and extraneous ventilation device are connected by being set on substrate, thus when microheater works, the chamber limited by heat-insulated through hole, support membrane and encapsulating shell is in communication with the outside, and prevents from causing the flimsy problem of device due to the pressure differential of the inside and outside presence of chamber.
Description
Technical field
The present invention relates to micro-electromechanical system field, more particularly, to a kind of microheater and its processing method.
Background technology
In correlation technique, the structure of micro-hotplate mainly has closing membrane structure and cantilever beam structure, cantilever beam structure
Power consumption than closing membrane structure it is low in energy consumption, and cantilever beam structure due to composite membrane thermal stress release problem device will be caused to exist
Risen and fallen on horizontal plane, and with the rise of device reaction temperature, composite membrane is by expanded by heating, and these can all increase cantilever beam knot
Structure thermal stress localized clusters.Close membrane mechanical performance more preferably, hangs film mechanical performance poor but compatible good with CMOS technology
A bit.Because closed film mechanical strength is more preferable, and be conducive to the coating of follow-up sensitive material and proposing for subsequent sensor life-span
Height, most sensors use this design.
However, the micro-hotplate of closing membrane structure is in the long-term course of work, its internal device is easily damaged
Bad problem, so as to influence the practical effect of sensor and the reliability of work.
The content of the invention
The application is that discovery based on inventor to following facts and problem and understanding are made：Inventor is sent out by studying
It is existing, the micro-hotplate of membrane structure is closed in the long-term course of work, and its internal device is damaged mainly by material
Caused by material fatigue fracture.By the further research and exploration of inventor, the reason for discovery causes the fatigue fracture of device exists
In：Gas pressure change in the chamber for the micro- heating of face type for closing membrane structure causes its support membrane to remove to be influenceed by itself thermal stress
Outside, also by periodicity/chronicity pressure differential caused by draught head, so that support membrane is in periodicity/chronicity pressure differential
In the presence of easily occur fatigue fracture.
It is contemplated that at least solving one of technical problem present in prior art.Therefore, the present invention proposes that one kind is micro-
Type heater, the microheater is simple in construction, service life length, reliability high.
The invention also provides a kind of processing method of above-mentioned microheater.
The microheater of embodiment according to a first aspect of the present invention, including：Substrate, the substrate has along its thickness side
To the first surface and second surface being oppositely arranged, the substrate is provided with runs through its heat-insulated through hole, and institute in thickness direction
State and the heat-insulated through hole and extraneous ventilation device are communicated with substrate；Support membrane, the support membrane is located at the substrate
On the first surface and the capping heat-insulated through hole first end；Heating member, the heating member is located at the remote of the support membrane
On surface from the heat-insulated through hole；Encapsulating shell, the encapsulating shell is located on the second surface of the substrate and covers institute
State the second end of heat-insulated through hole.
Microheater according to embodiments of the present invention, heat-insulated through hole and extraneous ventilation are connected by being set on substrate
Structure, thus when microheater works, the chamber limited by heat-insulated through hole, support membrane and encapsulating shell is in communication with the outside, and prevents
The flimsy problem of device is only caused due to the pressure differential of the inside and outside presence of chamber.
According to some alternative embodiments of the present invention, the second surface of the substrate is provided with groove, the groove
The ventilation device is limited between the encapsulating shell.
Alternatively, the groove is multiple and being provided at circumferentially spaced along the heat-insulated through hole.
Alternatively, the cross section of the groove is curved or U-shaped.
According to some alternative embodiments of the present invention, the end positioned at the first surface of the heat-insulated through hole is formed as
It is circular.
Further, the cross-sectional area of the heat-insulated through hole is by the first surface to the direction of the second surface
Upper increase.
According to some alternative embodiments of the present invention, the heating member is resistive heater, and the resistive heater is at it
Curvature varying on bearing of trend is continuous.
Alternatively, projection of the resistive heater on the support membrane be rounded, oval, involute shape or summit
Locate the polygon of rounding.
Alternatively, the resistive heater includes parallel to each other and spaced multiple straight sections and connected two neighboring
The curved segment of the straight section, the curved segment and the junction of the straight section are seamlessly transitted.
The processing method of the microheater of embodiment, comprises the following steps according to a second aspect of the present invention：S10, in institute
The first surface for stating substrate deposits to form the support membrane；S20, the heating member is laid on the support membrane；S30、
The substrate is etched to form the heat-insulated through hole from the second surface of the substrate along its thickness direction, in the substrate
The second surface on the substrate is etched to form the groove；S40, using bonding agent by the encapsulating shell and the lining
Bottom connects to encapsulate the internal components of the microheater.
The processing method of the microheater of embodiment according to a second aspect of the present invention, process it is simple, easy to operate and
Forming Quality is high.
According to some alternative embodiments of the present invention, in the S30 steps, the heat-insulated through hole and the groove are etched
The step of it is as follows：The substrate is first etched along its thickness direction by the second surface of the substrate using dry etching technology
To form the Part I of the heat-insulated through hole, carved using above-mentioned dry etching technology on the second surface of the substrate
The substrate is lost to form the Part I of the groove；Wet etching technique is used again in the Part I of the heat-insulated through hole
On the basis of continue to etch the substrate along the thickness direction of the substrate to form the heat-insulated through hole, carved using above-mentioned wet method
Erosion technology continues the etching substrate to form the groove on the basis of the Part I of the groove.
Alternatively, the dry etching technology is deep reaction ion etching.
Alternatively, the corrosive agent of the wet etching technique is Triton X-100 and TMAH
Mixed solution.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become from description of the accompanying drawings below to embodiment is combined
Substantially and be readily appreciated that, wherein：
Fig. 1 is the part isometric structure chart of microheater according to embodiments of the present invention；
Fig. 2 is the part isometric structure chart of another angle of microheater according to embodiments of the present invention.
Reference：
Substrate 1, first surface 11, second surface 12, heat-insulated through hole 13, first paragraph 131, second segment 132, ventilation device
14,
Support membrane 2,
Heating member 3, straight section 31, curved segment 32,
Electrode 4.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the invention, it is to be understood that term " " center ", " thickness ", " on ", " under ", "front", "rear",
The orientation of instruction such as "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " axial direction ", " radial direction ", " circumference " or
Position relationship is, based on orientation shown in the drawings or position relationship, to be for only for ease of the description present invention and simplify description, without
It is that instruction or the signified device of hint or element must have specific orientation, with specific azimuth configuration and operation, therefore not
It is understood that as limitation of the present invention.In addition, defining " first ", the feature of " second " can express or implicitly include one
Individual or more this feature.In the description of the invention, unless otherwise indicated, " multiple " be meant that two or two with
On.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected to by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
Microheater according to embodiments of the present invention is described below with reference to Fig. 1 and Fig. 2.
As depicted in figs. 1 and 2, the microheater of embodiment according to a first aspect of the present invention, including：Substrate 1, support membrane
2nd, heating member 3 and encapsulating shell (not shown).For example, above-mentioned microheater can be micro-hotplate, it is above-mentioned it is miniature plus
Hot device can apply to sensor field.
Specifically, substrate 1 has the first surface 11 and second surface 12 being oppositely arranged along its thickness direction, in substrate
1 when placing in the horizontal direction, first surface 11 and the upper and lower surface that second surface 12 is substrate 1.Substrate 1 is provided with
Thickness direction runs through its heat-insulated through hole 13, and heat-insulated through hole 13 and extraneous ventilation device 14 are communicated with substrate 1.It is optional
Ground, substrate 1 can be silicon substrate.
Support membrane 2 is located on the first surface 11 of substrate 1 and covers the first end of heat-insulated through hole 13, the middle part of support membrane 2
Cover the first end of heat-insulated through hole 13, being partially supported upon on substrate 1 and being connected with substrate 1 adjacent to its periphery edge of support membrane 2.
Support membrane 2 can be silicon oxide film, silicon nitride film or silica/silicon nitride composite membrane.
Heating member 3 is located on the surface of remote heat-insulated through hole 13 of support membrane 2, is supported heating member 3 by support membrane 2 and is incited somebody to action
Heating member 3 is spaced with heat-insulated through hole 13.Alternatively, heating member 3 can be thread, sheet etc..It is additionally provided with and heats on substrate 1
The connected electrode 4 of part 3, electrode 4 can be set with the periphery edge of adjacent substrate 1.For example, when substrate 1 is square, electrode 4 can be with
It is located at four corners of substrate 1.
Encapsulating shell is located on the second surface 12 of substrate 1 and covers the second end of heat-insulated through hole 13, passes through encapsulating shell, support
Film 2 covers the second end and the first end of heat-insulated through hole 13 respectively so that common between encapsulating shell, support membrane 2 and heat-insulated through hole 13
Limit chamber.
It is understood that during microheater works, heating member 3, which works, can produce heat, and support membrane 2
Heating member 3 is separated with heat-insulated through hole 13, now different pressure, two tables of support membrane 2 are born in the two of support membrane 2 surface
A surface in face is towards heating member 3 and another surface towards above-mentioned chamber so that support membrane 2 is removed by itself thermal stress shadow
Ring outer, the pressure differential as caused by heat also suffered from.
, can be by the chamber and the external world by the ventilation device 14 by being provided with above-mentioned ventilation device 14 on substrate 1
Connection, thus when microheater works, can reduce the gas pressure and the gas pressure of its outside in above-mentioned chamber
Pressure differential so that gas pressure and the gas pressure of its outside in above-mentioned chamber reach unanimity, so as to reduce support membrane 2
Suffered pressure differential so that the pressure at both sides of support membrane 2 reaches unanimity, so as to prevent support membrane 2 because by periodically/length
Fatigue damage problem caused by the pressure differential of phase property, extends the service life of microheater, improves microheater work
Reliability.
Microheater according to embodiments of the present invention, by setting the heat-insulated through hole 13 of connection and the external world on substrate 1
Ventilation device 14, thus when microheater works, the chamber limited by heat-insulated through hole 13, support membrane 2 and encapsulating shell with it is outer
Boundary is connected, and prevents from causing the flimsy problem of device due to the pressure differential of the inside and outside presence of chamber.
According to some alternative embodiments of the present invention, reference picture 2, the second surface 12 of substrate 1 is provided with groove, the groove
It can radially extend and run through the inwall of heat-insulated through hole 13 and the periphery wall of substrate 1, be limited between groove and encapsulating shell logical
Depressed structure 14.Thus, by setting groove on the second surface 12 of substrate 1, the machine-shaping of ventilation device 14 can be facilitated,
And make it that ventilation device 14 is simple.
Alternatively, reference picture 2, groove can be multiple and being provided at circumferentially spaced along heat-insulated through hole 13.Thus, it is possible to make
Gas in above-mentioned chamber and its outside gas can rapidly and uniformly circulate so that gas pressure in chamber with outside it
The gas pressure in portion quickly reaches unanimity, while can be more uniformly distributed the gas pressure of the various pieces in chamber.For example,
Above-mentioned multiple grooves can radially be set, it is possible thereby to shorten the flow path of gas, while can increase the stream of gas
Dynamic area, preferably can cause the pressure at both sides of support membrane 2 to reach unanimity, more significantly reduce the pressure suffered by support membrane 2
Power is poor.
Alternatively, the cross section of above-mentioned groove can be with curved or U-shaped.So that groove it is simple in construction, be easy to plus
Work is molded, while so that the internal face of groove is smooth and avoids the generation of stress, and further increasing microheater can
By property.
According to some alternative embodiments of the present invention, referring to Figures 1 and 2, heat-insulated through hole 13 is located at first surface 11
End is formed as circular so that the part of the heat-insulated through hole 13 of capping of support membrane 2 is also circle, i.e., in hanging in support membrane 2
Part be circle, it is possible thereby to make in support membrane 2 in its edge of hanging part to be smooth continuous and avoid salient angle
Appearance, so as to prevent the problem of stress concentration of support membrane 2, further improve support membrane 2 life-span and miniature heating
The reliability of device work.Alternatively, support membrane 2 is overall can be with rounded or square.
Further, the cross-sectional area of heat-insulated through hole 13 is in (the ginseng by first surface 11 to the direction of second surface 12
According on the direction from top to bottom in Fig. 2) increase.Thus, it is possible to the overall structure stability and intensity of microheater are improved,
The chip density of microheater can be improved simultaneously.
For example, heat-insulated through hole 13 can be formed as truncated cone-shaped.
In another example, reference picture 2, heat-insulated through hole 13 can include internal diameter different first paragraph 131 and second segment 132, above-mentioned
First paragraph 131 and second segment 132 are all formed as cylinder, wherein first paragraph 131 adjacent to heat-insulated through hole 13 first surface 11,
Two section of 132 second surface 12 adjacent to heat-insulated through hole 13, the internal diameter of first paragraph 131 is less than the internal diameter of second segment 132.
According to some alternative embodiments of the present invention, reference picture 1, heating member 3 can be resistive heater, resistive heater
Curvature varying in their extension direction is continuous.As a result, being smoothly to connect between the various pieces of resistive heater
Take over and cross, the problem of can preventing from occurring structural stress concentration on heating member 3 further improves the reliable of microheater
Property.
For example, projection of the resistive heater on support membrane 2 can be fallen with rounded, oval, involute shape or apex
The polygon of fillet.
In another example, reference picture 1, resistive heater can include parallel to each other and spaced multiple straight sections 31 and connect
The curved segment 32 of two neighboring straight section 31 is connect, curved segment 32 and the junction of straight section 31 are seamlessly transitted.Thus, it is possible to make resistive heater
It is evenly distributed on support membrane 2 so that microheater can operationally obtain larger area and high-quality samming region.
The processing method that the microheater of embodiment according to a second aspect of the present invention is described referring to Fig. 1 and Fig. 2.
The processing method of the microheater of embodiment, comprises the following steps according to a second aspect of the present invention：
S10, substrate 1 first surface 11 deposition form support membrane 2.Can be using chemical vapour deposition technique in substrate
1 deposition of first surface 11 forms above-mentioned support membrane 2, and the support membrane 2 can be structure of composite membrane.It is for instance possible to use low pressure
Chemical vapour deposition technique or plasma enhanced chemical vapor deposition technology deposit on the first surface 11 of substrate 1 and form oxygen
SiClx/silicon nitride composite membrane.Wherein, can be to the first surface 11 and second of substrate 1 on substrate 1 before depositing support film 2
Surface 12 is polished, it is possible thereby to strengthen the bonding strength and reliability between support membrane 2 and substrate 1.
S20, the laying heating member 3 on support membrane 2, it is possible to use sputtering technology deposits on support membrane 2 and forms heating member
3, the method that can for example use magnetron sputtering.According to design requirement on support membrane 2 sputtering sedimentation slabbing or it is thread plus
Warmware 3, the graphics shape of heating member 3 can be circle, ellipse, involute shape, the polygon of apex rounding or snakelike.
S30, from the second surface 12 of substrate 1 along its thickness direction (direction from bottom to top in reference picture 2) etch serve as a contrast
Bottom 1 is to form heat-insulated through hole 13, and etched substrate 1 is to form groove on the second surface 12 of substrate 1.Heat-insulated through hole 13 and groove
Etching can carry out simultaneously, can also successively carry out (for example, can first etch heat-insulated through hole 13, then etched recesses).Certainly,
Heat-insulated through hole 13 and groove are etched simultaneously can improve processing efficiency.
S40, use bonding agent to be connected encapsulating shell with substrate 1 to encapsulate the internal components of microheater.In encapsulation,
Bonding agent is smeared on the package, then encapsulating shell is be bonded with the second surface 12 of substrate 1.Bonding agent is smeared on the package
When so that the bonding agent thickness of the bonding region on encapsulating shell can it is homogeneous and less than groove depth, with prevent encapsulating shell with
Substrate 1 be bonded when glued dose of groove fill up and so that the ventilation device 14 of microheater is plugged.
The processing method of the microheater of embodiment according to a second aspect of the present invention, process it is simple, easy to operate and
Forming Quality is high.
According to some alternative embodiments of the present invention, in above-mentioned S30 steps, the step of etching heat-insulated through hole 13 and groove
It is as follows：
First use dry etching technology heat-insulated to be formed along its thickness direction etched substrate 1 by the second surface 12 of substrate 1
The Part I of through hole 13, use above-mentioned dry etching technology on the second surface 12 of substrate 1 etched substrate 1 to form groove
Part I.
Continue the thickness direction along substrate 1 on the basis of the Part I of heat-insulated through hole 13 using wet etching technique again
Etched substrate 1 continues quarter using above-mentioned wet etching technique to form heat-insulated through hole 13 on the basis of the Part I of groove
Substrate 1 is lost to form groove.
Thus, the technology being combined by dry etching technology with wet etching technique, can reduce microheater
Processing cost, it is possible to ensure Forming Quality.Moreover, first being carved again using wet method using dry etching when etching heat-insulated through hole 13
Erosion, the damage that dry etching can be avoided to be likely to result in support membrane 2；Dry etching and wet etching are used in etched recesses
The technology being combined, can improve the depth of groove, it is to avoid the above-mentioned chamber formation closed chamber of microheater after encapsulation.
Alternatively, above-mentioned dry etching technology can be deep reaction ion etching.
Alternatively, the corrosive agent of above-mentioned wet etching technique can be Triton X-100 and tetramethyl hydroxide
The mixed solution of ammonium.For example, when substrate 1 is silicon substrate, the corrosive agent of wet etching technique uses above-mentioned mixed solution, can
To eliminate the acute angle stress concentration structure of anisotropic silicon generation, and be conducive to eliminating rotten caused by formation boss on groove
Erosion problem.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means to combine specific features, the knot that the embodiment or example are described
Structure, material or feature are contained at least one embodiment of the present invention or example.In this manual, to above-mentioned term
Schematic representation is not necessarily referring to identical embodiment or example.Moreover, specific features, structure, material or the spy of description
Point can in an appropriate manner be combined in any one or more embodiments or example.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that：Not
In the case of departing from the principle and objective of the present invention a variety of change, modification, replacement and modification can be carried out to these embodiments, this
The scope of invention is limited by claim and its equivalent.
Claims (13)
1. a kind of microheater, it is characterised in that including：
Substrate, the substrate has the first surface and second surface being oppositely arranged along its thickness direction, and the substrate is provided with
Run through its heat-insulated through hole in thickness direction, and the heat-insulated through hole and extraneous ventilation device are communicated with the substrate；
Support membrane, the support membrane is located on the first surface of the substrate and covers the first end of the heat-insulated through hole；
Heating member, the heating member is located on the surface of the remote heat-insulated through hole of the support membrane；
Encapsulating shell, the encapsulating shell is located on the second surface of the substrate and covers the second end of the heat-insulated through hole.
2. microheater according to claim 1, it is characterised in that the second surface of the substrate is provided with recessed
Groove, limits the ventilation device between the groove and the encapsulating shell.
3. microheater according to claim 2, it is characterised in that the groove is multiple and along the heat-insulated through hole
Be provided at circumferentially spaced.
4. microheater according to claim 2, it is characterised in that the cross section of the groove is curved or U-shaped.
5. the microheater according to any one of claim 1-4, it is characterised in that the heat-insulated through hole is located at institute
The end for stating first surface is formed as circular.
6. microheater according to claim 5, it is characterised in that the cross-sectional area of the heat-insulated through hole is by institute
The side for stating first surface to the second surface is increased up.
7. the microheater according to any one of claim 1-4, it is characterised in that the heating member is adding thermal resistance
Silk, the Curvature varying of the resistive heater in their extension direction is continuous.
8. microheater according to claim 7, it is characterised in that the resistive heater is on the support membrane
Project the polygon of rounded, oval, involute shape or apex rounding.
9. microheater according to claim 7, it is characterised in that the resistive heater include it is parallel to each other and
Every the multiple straight sections and the curved segment of the two neighboring straight section of connection of setting, the curved segment and the junction of the straight section are smooth
Transition.
10. a kind of processing method of microheater according to any one of claim 2-9, it is characterised in that including
Following steps：
S10, in the first surface of the substrate deposit to form the support membrane；
S20, the heating member is laid on the support membrane；
S30, from the second surface of the substrate along its thickness direction the substrate is etched to form the heat-insulated through hole,
The substrate is etched on the second surface of the substrate to form the groove；
S40, use bonding agent to be connected the encapsulating shell with the substrate to encapsulate the internal components of the microheater.
11. the processing method of microheater according to claim 10, it is characterised in that in the S30 steps, is carved
The step of losing the heat-insulated through hole and the groove is as follows：
Dry etching technology is first used to etch the substrate along its thickness direction to be formed by the second surface of the substrate
The Part I of the heat-insulated through hole, is etched on the second surface of the substrate described using above-mentioned dry etching technology
Substrate is to form the Part I of the groove；
Continued again using wet etching technique on the basis of the Part I of the heat-insulated through hole along the thickness side of the substrate
To etching the substrate to form the heat-insulated through hole, using above-mentioned wet etching technique the Part I of the groove base
Continue to etch the substrate to form the groove on plinth.
12. the processing method of microheater according to claim 11, it is characterised in that the dry etching technology is
Deep reaction ion etching.
13. the processing method of microheater according to claim 11, it is characterised in that the wet etching technique
Corrosive agent is the mixed solution of Triton X-100 and TMAH.
Priority Applications (2)
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| CN201710272620.4A CN106976837B (en) | 2017-04-24 | 2017-04-24 | Micro heater and processing method thereof |
| PCT/CN2017/086296 WO2018196089A1 (en) | 2017-04-24 | 2017-05-27 | Miniature heater and processing method therefor |
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| CN201710272620.4A CN106976837B (en) | 2017-04-24 | 2017-04-24 | Micro heater and processing method thereof |
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| CN106976837B CN106976837B (en) | 2020-06-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109399551A (en) * | 2018-09-26 | 2019-03-01 | 广西桂芯半导体科技有限公司 | Wafer-level package structure and packaging method |
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| CN102065362A (en) * | 2009-11-18 | 2011-05-18 | 宝星电子股份有限公司 | MEMS microphone package and packaging method |
| CN102070118A (en) * | 2010-10-26 | 2011-05-25 | 南京工业大学 | Microheating plate for metal oxide semiconductor nano-film gas sensor |
| CN102515087A (en) * | 2011-12-01 | 2012-06-27 | 上海先进半导体制造股份有限公司 | Manufacturing method of flow sensor |
| CN104990968A (en) * | 2015-07-03 | 2015-10-21 | 中国科学院电子学研究所 | Humidity sensor device based on film volume acoustic wave resonator |
| CN206735793U (en) * | 2017-04-24 | 2017-12-12 | 广东美的制冷设备有限公司 | Microheater |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109399551A (en) * | 2018-09-26 | 2019-03-01 | 广西桂芯半导体科技有限公司 | Wafer-level package structure and packaging method |
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